JP3111976B2 - Wire bonding apparatus and wire bonding strength measuring method - Google Patents

Wire bonding apparatus and wire bonding strength measuring method

Info

Publication number
JP3111976B2
JP3111976B2 JP10130795A JP13079598A JP3111976B2 JP 3111976 B2 JP3111976 B2 JP 3111976B2 JP 10130795 A JP10130795 A JP 10130795A JP 13079598 A JP13079598 A JP 13079598A JP 3111976 B2 JP3111976 B2 JP 3111976B2
Authority
JP
Japan
Prior art keywords
wire
bonding
capillary
wire bonding
tension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10130795A
Other languages
Japanese (ja)
Other versions
JPH11330137A (en
Inventor
利比古 吉村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP10130795A priority Critical patent/JP3111976B2/en
Publication of JPH11330137A publication Critical patent/JPH11330137A/en
Application granted granted Critical
Publication of JP3111976B2 publication Critical patent/JP3111976B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8593—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】この発明は、ワイヤボンディ
ングを行うワイヤボンディング装置およびこのワイヤボ
ンディングしたワイヤの強度を測定するワイヤボンディ
ング強度測定方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a wire bonding apparatus for performing wire bonding and a wire bonding strength measuring method for measuring the strength of this wire-bonded wire.

【０００２】[0002]

【従来の技術】従来から、例えば大規模集積回路（以
下、ＬＳＩという）などの半導体チップのパッドとプリ
ント配線基板（ＰＷＢ）上の回路パターンやリードフレ
ームなどの接続は、金線などの導電性ワイヤをワイヤボ
ンディングすることにより行っている。一方、このよう
にして実施されたワイヤボンディングの品質を評価する
ために、従来から、ワイヤのプルテスト方法などが採用
されている。このプルテスト方法は、例えば、図３に示
すように、基板１上のＬＳＩ３のパッド４とステッチ２
とにワイヤボンディングを行った金線などのワイヤ８
に、テンションゲージ１３のフック１３ａを引っ掛けな
がら、そのワイヤ８を破断するまで引き上げ、その破断
時のテンションゲージ１３による測定値から、ワイヤ８
の破断強度および破断箇所を調べるというものである。
また、ベアチップを直接基板にワイヤボンディングする
ＣＯＢ実装においては、ステッチ２の表面状態が接続の
品質（強度）を左右するため、ステッチ２部の接続強度
のチェックが重要である。2. Description of the Related Art Conventionally, connection between a pad of a semiconductor chip such as a large-scale integrated circuit (hereinafter referred to as an LSI) and a circuit pattern or a lead frame on a printed wiring board (PWB) is made of a conductive material such as a gold wire. This is performed by wire bonding the wires. On the other hand, in order to evaluate the quality of the wire bonding performed as described above, a wire pull test method or the like has been conventionally used. In this pull test method, for example, as shown in FIG.
8 such as a gold wire with wire bonding
Then, while hooking the hook 13 a of the tension gauge 13, the wire 8 is pulled up until the wire 8 is broken.
The rupture strength and the rupture location of the specimen were examined.
Further, in COB mounting in which a bare chip is directly wire-bonded to a substrate, it is important to check the connection strength of the stitch 2 because the surface condition of the stitch 2 affects the quality (strength) of the connection.

【０００３】ところが、前記のようなテンションゲージ
１３によるワイヤボンディング強度測定方法にあって
は、ワイヤ８の長さやＬＳＩ自体の厚みなどによって、
フック１３ａによって引き上げられるワイヤ８のループ
形状が一定でないため、引き上げ強度も一定しない。ま
た、前記ワイヤボンディングが正常に行われていれば、
前記フック１３ａによる引き上げによって破断する箇所
はワイヤ自身であり、ワイヤ８のステッチ２に対する接
続強度を直接測定することができない。つまり、ワイヤ
ボンディング強度の測定が行えない。However, in the method of measuring wire bonding strength using the tension gauge 13 as described above, the length of the wire 8 or the thickness of the LSI itself depends on the length of the wire 8 and the like.
Since the loop shape of the wire 8 pulled up by the hook 13a is not constant, the pulling strength is not constant. Also, if the wire bonding is performed normally,
The portion that is broken by the lifting by the hook 13a is the wire itself, and the connection strength of the wire 8 to the stitch 2 cannot be directly measured. That is, the measurement of the wire bonding strength cannot be performed.

【０００４】一方、これに対して、前記のようなワイヤ
ボンディングの終了後に、図４（ａ）に示すように、ワ
イヤ８をはさみ１４により途中で切断し、さらに、図４
（ｂ）に示すように、ステッチ２側のワイヤ８の一端
を、摘み上げ具１５を有するテンションゲージ（図示し
ない）を用いて摘んで、さらに垂直上方向へ引き上げ、
これによってワイヤ８がステッチ２に対して分離すると
きの測定値から、ワイヤボンディング強度を測定する方
法が採用されている。On the other hand, after the completion of the wire bonding as described above, the wire 8 is cut in the middle by scissors 14 as shown in FIG.
As shown in (b), one end of the wire 8 on the side of the stitch 2 is picked up using a tension gauge (not shown) having a pick-up tool 15, and further pulled up vertically.
Thus, a method of measuring the wire bonding strength from the measured value when the wire 8 separates from the stitch 2 is adopted.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、かかる
従来のワイヤボンディング強度測定方法にあっては、ワ
イヤ８を切断するはさみ１４や摘み上げ具１５を有する
テンションゲージなどを別途準備した上で、これらの切
断や引き上げなどの作業，操作を実行する必要があるほ
か、これらを自動化する場合に、ワイヤ８の切断や引き
上げの位置決めを行う作業工程が繁雑で、長い時間が掛
かるという課題があった。However, in such a conventional wire bonding strength measuring method, a scissor 14 for cutting the wire 8 and a tension gauge having a pick-up tool 15 are separately prepared, and these are used. In addition to the necessity of performing operations and operations such as cutting and pulling up, when automating these operations, there is a problem that the work process of positioning the cutting and pulling up of the wire 8 is complicated and takes a long time.

【０００６】この発明は前記課題を解決するものであ
り、ワイヤのループ形状や位置に関係なく信頼性の高い
測定値が得られるとともに、ワイヤボンディング工程の
中でワイヤボンディング強度を非破壊状態で速やかに測
定することができ、さらにワイヤボンディング強度測定
のための時間を別途用意せずに、全てのボンディング対
象についてその測定を効率的に行えるワイヤボンディン
グ装置装置およびワイヤボンディング強度測定方法を提
供することを目的とする。The present invention has been made to solve the above-mentioned problems, and provides a highly reliable measurement value regardless of the loop shape and position of a wire, and rapidly reduces the wire bonding strength in a non-destructive state in a wire bonding process. The present invention provides a wire bonding apparatus and a wire bonding strength measuring method that can efficiently perform the measurement for all bonding targets without separately preparing a time for the wire bonding strength measurement. Aim.

【０００７】[0007]

【課題を解決するための手段】前記目的達成のために、
請求項１の発明にかかるワイヤボンディング装置は、第
１のボンディング部および第２のボンディング部上へ、
これらに接合するためのワイヤを案内しながら引き出す
キャピラリと、前記第１のボンディング部に続いて前記
第２のボンディング部上に接合したワイヤを挟んで引き
ちぎるカットクランパとを備えたものにおいて、前記キ
ャピラリおよびカットクランパ間において、前記ワイヤ
をワイヤガイドによりガイドするとともに、該ワイヤガ
イドにガイドされているワイヤのテンションを、ロード
セルにより測定するようにしたものである。To achieve the above object,
The wire bonding apparatus according to the first aspect of the present invention provides a wire bonding apparatus on a first bonding unit and a second bonding unit.
A capillary which is drawn out while guiding a wire to be joined thereto, and a cut clamper which, after the first bonding portion, cuts the wire bonded to the second bonding portion with the wire interposed therebetween and tears off the capillary. And between the cut clamper, the wire is guided by a wire guide, and the tension of the wire guided by the wire guide is measured by a load cell.

【０００８】また、請求項２の発明にかかるワイヤボン
ディング装置は、前記ワイヤガイドを、前記ワイヤに少
なくとも２箇所で接触するように設けられたガイドロー
ラとし、該ガイドローラ側にワイヤを押し付けたときの
そのワイヤのテンションを、ロードセルにより測定する
ようにしたものである。According to a second aspect of the present invention, in the wire bonding apparatus, the wire guide is a guide roller provided so as to contact the wire at at least two places, and the wire is pressed against the guide roller side. Is measured by a load cell.

【０００９】また、請求項３の発明にかかるワイヤボン
ディング強度測定方法は、キャピラリから引き出したワ
イヤ端を第１のボンディング部に接合し、続いて、前記
キャピラリから引き出したワイヤの途中を第２のボンデ
ィング部に接合した後、カットクランパによりそのワイ
ヤをクランプした状態で引きちぎる工程の中で、該カッ
トクランパと前記キャピラリとの間の区間で前記ワイヤ
に加わるテンションをロードセルにより測定するように
したものである。According to a third aspect of the present invention, there is provided a wire bonding strength measuring method, wherein a wire end drawn from a capillary is joined to a first bonding portion, and then the middle of the wire drawn from the capillary is connected to a second portion. after bonding to the bonding portion, in the process of tearing whilst clamped the wire by cutting damper, the cut
The tension applied to the wire in a section between the toclamper and the capillary is measured by a load cell.

【００１０】[0010]

【発明の実施の形態】以下、この発明の実施の一形態を
図について説明する。図１はこの発明のワイヤボンディ
ング装置を示し、同図において、１は基板、３は基板１
上にエポキシボンドなどにより取り付けられたＬＳＩ、
２は基板１上にプリント配線された第２のボンディング
部としてのステッチ、４は第１のボンディング部として
用いられる前記ＬＳＩ３上のパッド、８はこのパッド４
とステッチ２とを繋ぐ金線などのワイヤである。また、
７はワイヤボンディング装置の主要部となる筒状のキャ
ピラリで、これがワイヤ８を筒内にガイドして引き出し
可能にしている。５はテンションクランパ、６はキャピ
ラリ７の上方において、ワイヤ８を挟んで引きちぎるよ
うにしてカットするカットクランパである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a wire bonding apparatus according to the present invention. In FIG.
LSI mounted on top with epoxy bond,
2 is a stitch as a second bonding portion printed and wired on the substrate 1, 4 is a pad on the LSI 3 used as a first bonding portion, and 8 is a pad 4
And a wire such as a gold wire connecting the stitch 2 and the stitch 2. Also,
Reference numeral 7 denotes a cylindrical capillary which is a main part of the wire bonding apparatus, and guides the wire 8 into the cylinder so that the wire 8 can be pulled out. Reference numeral 5 denotes a tension clamper, and reference numeral 6 denotes a cut clamper that cuts the wire 8 above the capillary 7 so that the wire 8 is torn off.

【００１１】また、９は前記ワイヤボンディング装置内
に組み込まれたワイヤボンディングの強度測定部であ
り、これがキャピラリ７およびカットクランパ６間にお
いて、ワイヤ８を２箇所で曲げ変形させることなくスム
ースにガイドするワイヤガイドとしてのガイドローラ１
０，１１を有する。また、１２はこれらのガイドローラ
１０，１１間にあって、ワイヤ８をそのガイドローラ１
０，１１側に押し付けて、そのワイヤ８のテンションの
変化を、そのワイヤ８に加わる加重の変化として測定す
るロードセルである。このロードセル１２もワイヤボン
ディングの前記の強度測定部を構成する。Reference numeral 9 denotes a wire bonding strength measuring unit incorporated in the wire bonding apparatus, which smoothly guides the wire 8 between the capillary 7 and the cut clamper 6 without bending the wire 8 at two places. Guide roller 1 as wire guide
It has 0,11. Reference numeral 12 is located between the guide rollers 10 and 11, and the wire 8 is connected to the guide rollers 1 and 11.
The load cell is pressed against the 0, 11 side to measure a change in the tension of the wire 8 as a change in the weight applied to the wire 8. The load cell 12 also constitutes the above-described strength measuring unit for wire bonding.

【００１２】次にワイヤボンディング工程およびワイヤ
ボンディング強度測定を、図２の工程図を参照しながら
説明する。まず、ワイヤボンディング開始時にあたっ
て、テンションクランパ５を閉じ、カットクランパ６を
開き、キャピラリ７をパッド４の直上へ移動させて、そ
のキャピラリ７から突出させたワイヤ８端に、これを放
電等で加熱，溶融する。これにより、図２（ａ）に示す
ような一定の直径をもったボール８Ａが形成される。続
いて、この状態からキャピラリ７を降下させ、そのボー
ル８Ａをパッド４に超音波溶接などにより、図２（ｂ）
に示すように接続する。この接続後、キャピラリ７を、
図２（ｃ）に示すように、テンションクランパ５および
カットクランパ６を開いた状態にて、所定の高さまで上
昇させ、さらに、テンションクランパ５を閉じて、この
キャピラリ７からワイヤ８を引き出させながら、このキ
ャピラリ７を図２（ｄ）に示すようなステッチ２の直上
へ移動する。Next, the wire bonding step and the wire bonding strength measurement will be described with reference to the process chart of FIG. First, at the start of wire bonding, the tension clamper 5 is closed, the cut clamper 6 is opened, the capillary 7 is moved directly above the pad 4, and the end of the wire 8 protruding from the capillary 7 is heated by electric discharge or the like. , Melts. Thus, a ball 8A having a constant diameter as shown in FIG. 2A is formed. Subsequently, the capillary 7 is lowered from this state, and the ball 8A is ultrasonically welded to the pad 4 as shown in FIG.
Connect as shown. After this connection, the capillary 7 is
As shown in FIG. 2 (c), the tension clamper 5 and the cut clamper 6 are opened and raised to a predetermined height. Further, the tension clamper 5 is closed and the wire 8 is pulled out from the capillary 7. Then, the capillary 7 is moved right above the stitch 2 as shown in FIG.

【００１３】ここで、テンションクランパ５およびカッ
トクランパ６を開いてキャピラリ７を図２（ｅ）に示す
ようにステッチ２上面へ降下させ、所定量だけループ上
に引き出されたワイヤ８の一部をステッチ２に押し当
て、これの上に超音波溶接をする。この溶接が済むと、
再びキャピラリ７をステッチ２上から図２（ｆ）に示す
ように上昇させ、所定の上昇位置でカットクランパ６に
よりワイヤ８を摘んで保持させ、このカットクランパ６
の上昇によってワイヤ８をステッチ２上の接続部分か
ら、図２（ｇ）に示すように引きちぎる。この後、引き
ちぎられたワイヤ８端を、トーチ（ｔ）を利用して放電
等によって加熱，溶融し、図２（ｈ）に示すようにボー
ル８ａを形成する。そして、カットクランパ６を開き、
図２（ａ）〜図２（ｈ）の動作を繰り返して、多数組の
パッド４とステッチ２とを接続していく。Here, the tension clamper 5 and the cut clamper 6 are opened, the capillary 7 is lowered to the upper surface of the stitch 2 as shown in FIG. 2E, and a part of the wire 8 pulled out on the loop by a predetermined amount is removed. Press it against the stitch 2 and do ultrasonic welding on it. Once this welding is done,
The capillary 7 is again raised from above the stitch 2 as shown in FIG. 2 (f), and the wire 8 is pinched and held by the cut clamper 6 at a predetermined raised position.
As a result, the wire 8 is torn off from the connection portion on the stitch 2 as shown in FIG. Thereafter, the end of the torn wire 8 is heated and melted by a discharge or the like using a torch (t) to form a ball 8a as shown in FIG. 2 (h). Then, open the cut clamper 6,
The operations of FIGS. 2A to 2H are repeated to connect a large number of sets of pads 4 and stitches 2.

【００１４】一方、前記ワイヤ８をステッチ２上の接続
部分から、図２（ｇ）に示すように引きちぎる動作の中
では、ワイヤ８のテンションが変化する。そこで、この
ワイヤ８のテンションの変化を、図１に示すように、ガ
イドローラ１０，１１間のワイヤ８に押し当てられてい
るロードセル１２により検知することにより、ワイヤ８
のステッチ２に対するワイヤボンディングの強度測定，
評価を行うことができる。つまり、ワイヤボンディング
工程の中で、ボンディング対象のすべてについて、その
ワイヤボンディングの強度測定を非破壊で効率的に測定
することができる。On the other hand, during the operation of tearing the wire 8 from the connection portion on the stitch 2 as shown in FIG. 2 (g), the tension of the wire 8 changes. Therefore, as shown in FIG. 1, the change in the tension of the wire 8 is detected by the load cell 12 pressed against the wire 8 between the guide rollers 10 and 11, so that the wire 8 is changed.
Measurement of wire bonding strength for stitch 2
An assessment can be made. That is, in the wire bonding process, the strength of wire bonding can be measured nondestructively and efficiently for all of the bonding targets.

【００１５】なお、前記実施の形態ではプリント基板上
のステッチ２へのワイヤボンディングの場合について説
明したが、半導体パッケージのリードフレームに対する
ワイヤボンディングおよびその強度測定も前記同様に実
施でき、また、ウェッジボンディング装置への適用も任
意である。In the above embodiment, wire bonding to the stitch 2 on the printed circuit board has been described. However, wire bonding to a lead frame of a semiconductor package and measurement of its strength can be performed in the same manner as described above. Application to the device is also optional.

【００１６】[0016]

【発明の効果】以上のように、この発明によれば、キャ
ピラリおよびカットクランパ間において、ワイヤをワイ
ヤガイドによりガイドするとともに、該ワイヤガイドに
ガイドされているワイヤのテンションを、ロードセルに
より測定するように構成したので、ワイヤのループ形状
や位置に関係なく信頼性の高い測定値が得られるととも
に、ワイヤを非破壊状態で速やかに測定することがで
き、さらにワイヤボンディング強度測定のための時間を
別途用意せずに、全てのボンディング対象についての測
定を確実に行えるという効果が得られる。As described above, according to the present invention, a wire is guided between a capillary and a cut clamper by a wire guide, and the tension of the wire guided by the wire guide is measured by a load cell. With this configuration, highly reliable measurement values can be obtained regardless of the loop shape and position of the wire, the wire can be measured quickly in a non-destructive state, and the time for measuring the wire bonding strength is separately set. An effect is obtained that the measurement can be reliably performed for all the bonding targets without preparing.

【００１７】また、前記キャピラリから引き出したワイ
ヤの途中を第２のボンディング部に接合した後、カット
クランパによりそのワイヤをクランプした状態で引きち
ぎる工程の中で、前記ワイヤに加わるテンションをロー
ドセルにより測定するようにしたので、ワイヤを引きち
ぎる工程ごとに、ボンディング対象の全数について、迅
速かつ効率的に信頼性の高いワイヤボンディングの強度
測定を実施できるという効果が得られる。Further, after joining the wire drawn out of the capillary to the second bonding portion and then tearing the wire in a state where the wire is clamped by a cut clamper, the tension applied to the wire is measured by a load cell. With this configuration, it is possible to obtain the effect that the reliability of the wire bonding strength measurement can be quickly and efficiently measured with respect to the total number of the bonding targets for each wire tearing process.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 この発明の実施の一形態によるボンディング
装置を示す構成図である。FIG. 1 is a configuration diagram showing a bonding apparatus according to an embodiment of the present invention.

【図２】 この発明によるワイヤボンディングの手順を
示す工程図である。FIG. 2 is a process chart showing a procedure of wire bonding according to the present invention.

【図３】 従来のワイヤのプルテスト方法を示す説明図
である。FIG. 3 is an explanatory diagram showing a conventional wire pull test method.

【図４】 従来のワイヤボンディング強度測定方法を示
す説明図である。FIG. 4 is an explanatory view showing a conventional wire bonding strength measuring method.

【符号の説明】[Explanation of symbols]

１ 基板 ２ ステッチ（第２のボンディング部） ４ パッド（第１のボンディング部） ６ カットクランパ ７ キャピラリ ８ ワイヤ １０，１１ ガイドローラ（ワイヤガイド） １２ ロードセル DESCRIPTION OF SYMBOLS 1 Substrate 2 Stitch (2nd bonding part) 4 Pad (1st bonding part) 6 Cut clamper 7 Capillary 8 Wire 10, 11 Guide roller (wire guide) 12 Load cell

フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 H01L 21/60 321 Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/60 301 H01L 21/60 321

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 第１のボンディング部および第２のボン
ディング部上へ、これらに接合するためのワイヤを案内
しながら引き出すキャピラリと、 前記第１のボンディング部に続いて前記第２のボンディ
ング部上に接合したワイヤを挟んで引きちぎるカットク
ランパとを備えたワイヤボンディング装置において、 前記キャピラリおよびカットクランパ間において前記ワ
イヤをガイドするワイヤガイドと、 該ワイヤガイドにガイドされているワイヤのテンション
を測定するロードセルとを備えたことを特徴とするワイ
ヤボンディング装置。A capillary for guiding a wire to be bonded to the first bonding portion and the second bonding portion while guiding the wire to the first bonding portion and the second bonding portion; and a second bonding portion following the first bonding portion. A wire bonding apparatus comprising: a cut clamper that sandwiches and tears a wire bonded to a wire; a wire guide that guides the wire between the capillary and the cut clamper; and a load cell that measures a tension of the wire guided by the wire guide. And a wire bonding apparatus. 【請求項２】 前記ワイヤガイドが、前記ワイヤに少な
くとも２箇所で接触するように設けられたガイドローラ
であり、前記ロードセルが前記ガイドローラ側にワイヤ
を押し付けて、そのワイヤのテンションを測定するもの
であることを特徴とする請求項１に記載のワイヤボンデ
ィング装置。2. The apparatus according to claim 1, wherein the wire guide is a guide roller provided so as to come into contact with the wire at at least two places, and the load cell presses the wire against the guide roller and measures the tension of the wire. The wire bonding apparatus according to claim 1, wherein 【請求項３】キャピラリから引き出したワイヤ端を第１
のボンディング部に接合し、続いて、前記キャピラリか
ら引き出したワイヤの途中を第２のボンディング部に接
合した後、カットクランパによりそのワイヤをクランプ
した状態で引きちぎる工程の中で、該カットクランパと
前記キャピラリとの間の区間で前記ワイヤに加わるテン
ションをロードセルにより測定することを特徴とするワ
イヤボンディング強度測定方法。3. The wire end drawn out of the capillary is connected to a first end.
Then, after joining the middle of the wire drawn from the capillary to the second bonding portion, in the step of tearing the wire in a state where the wire is clamped by the cut clamper,
A wire bonding strength measuring method, wherein a tension applied to the wire in a section between the capillary and the capillary is measured by a load cell.
JP10130795A 1998-05-13 1998-05-13 Wire bonding apparatus and wire bonding strength measuring method Expired - Fee Related JP3111976B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10130795A JP3111976B2 (en) 1998-05-13 1998-05-13 Wire bonding apparatus and wire bonding strength measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10130795A JP3111976B2 (en) 1998-05-13 1998-05-13 Wire bonding apparatus and wire bonding strength measuring method

Publications (2)

Publication Number Publication Date
JPH11330137A JPH11330137A (en) 1999-11-30
JP3111976B2 true JP3111976B2 (en) 2000-11-27

Family

ID=15042884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10130795A Expired - Fee Related JP3111976B2 (en) 1998-05-13 1998-05-13 Wire bonding apparatus and wire bonding strength measuring method

Country Status (1)

Country Link
JP (1) JP3111976B2 (en)

Also Published As

Publication number Publication date
JPH11330137A (en) 1999-11-30

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