JP3756234B2 - Semiconductor device including semiconductor chip and functional test trace repair method for the chip - Google Patents

Semiconductor device including semiconductor chip and functional test trace repair method for the chip Download PDF

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JP3756234B2
JP3756234B2 JP3527096A JP3527096A JP3756234B2 JP 3756234 B2 JP3756234 B2 JP 3756234B2 JP 3527096 A JP3527096 A JP 3527096A JP 3527096 A JP3527096 A JP 3527096A JP 3756234 B2 JP3756234 B2 JP 3756234B2
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wire
wiring
pad
semiconductor chip
wire bonding
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JPH09232392A (en
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博志 藤野
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Rohm Co Ltd
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Rohm Co Ltd
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  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、機能試験済みの半導体チップを具備する半導体装置及び同チップの機能試験痕跡補修方法に関する。
【０００２】
【従来の技術】
従来、半導体チップには、ワイヤリング用パッドとは別途に、ＩＣの製造工程中に半導体チップの機能試験を行うための機能試験用パッドが形成されており、パッケージ工程に先立ち、上記機能試験用パッドに機能試験装置のプローブを圧接導通させて、上記半導体チップの機能試験を行うようにしている。
【０００３】
【発明が解決しようとする課題】
ところが、上記プローブが針状であるため、機能試験用パッドの上面に針で突いた跡のようなプローブ跡孔が残り、モールド樹脂で封止しても、この跡孔を充分に充填することができず、そのため、モールド樹脂での封止後も、上記跡孔に水分や空気が残留することになり、この水分や空気中の酸素が、機能試験用パッドやこれに隣接したワイヤリング用パッドを腐食したり、酸化させたりして、不良品発生や信頼性低下の一因となっていた。
【０００４】
そこで、本発明の半導体チップを具備する半導体装置では、ワイヤボンディング装置によって低腐食性物質からなるワイヤがボンディングされるワイヤリング用パッドと、このワイヤリング用パッドとは別途に設けたパッドを有し、ワイヤリング用パッドとは別途に設けたパッドに凹部が形成された半導体チップを具備する半導体装置であって、凹部を有するパッドの凹部には前記ワイヤボンディング装置によってワイヤを圧着してからワイヤを切断することにより凹部に低腐食性物質を充填し、ワイヤリング用パッドには前記ワイヤボンディング装置によってワイヤをボンディングしてワイヤリングを行った半導体チップを具備する半導体装置とした。
【０００５】
また、本発明の半導体チップの機能試験痕跡補修方法では、低腐食性物質からなるワイヤがボンディングされるワイヤリング用パッドと、このワイヤリング用パッドとは別途に設けた機能試験用パッドを有する半導体チップの機能試験用パッドに形成されたプローブ跡孔を、制御プログラムによってワイヤリングモードと補修モードとを連続して実行するワイヤボンディング装置のワイヤリングモードにおいてワイヤリング用パッドへのワイヤリングを行うとともに、補修モードにおいて機能試験用パッドにワイヤを圧着するとともにワイヤを切断することにより、プローブ跡孔を低腐食性物質で埋め戻すこととした。さらに、ワイヤリングモードは、半導体チップへ行う一次ワイヤボンディング工程と、同半導体チップを搭載したリードフレームへ行う二次ワイヤボンディング工程と、ボンディング終了後のワイヤ切断工程とからなり、補修モードでは、二次ワイヤボンディング工程を省略して、一次ワイヤボンディング工程から、直接ワイヤ切断工程に移行することにも特徴を有するものである。
【０００６】
【発明の実施の形態】
本発明の半導体装置では、半導体チップの上面側に形成された凹部を低腐食性物質で覆っており、また、半導体チップは、機能試験用パッドのプローブ跡孔を低腐食性物質で埋め戻しているので、モールド樹脂で封止した後に、プローブ跡孔に空気や水分が残留せず、従って、機能試験用パッドの酸化や腐食が防止され、不良品発生や信頼性低下を防止することができる。
【０００７】
また、本発明の補修方法では、半導体チップのワイヤリング用パッドに対して行うワイヤボンディングと同一処理を、機能試験用パッドに残ったプローブ跡孔に施し、その後、ワイヤを切断することにより、プローブ跡孔に溶着した残留ワイヤたるボールで埋め戻して跡孔を補修するものである。
【０００８】
即ち、ワイヤリングのためのボンディング制御を一部変更して、機能試験用パッドのプローブ跡孔の直上方にキャピラリを位置させ、この状態でキャピラリを下動させて、キャピラリを挿通したワイヤの先端の金ボールを機能試験用パッドのプローブ跡孔に圧着してワイヤボンディングを行い、同ワイヤボンディング後、キャピラリを上動させてワイヤリング用パッドから離隔し、ワイヤを切断することにより、プローブの痕跡を補修するようにしている。
【０００９】
なお、本来のワイヤリングのためのボンディングでは、ワイヤリング用パッドの直上方にキャピラリを位置させ、キャピラリを下動させて、キャピラリを挿通したワイヤの先端に形成されたボールをワイヤリング用パッドに圧着して一次ワイヤボンディングを行い、同一次ワイヤボンディング後、キャピラリを上動させてワイヤリング用パッドから離隔し、次いで、キャピラリをインナーリード上方に移動させて、キャピラリを下動させて二次ワイヤボンディングを行い、その後、ワイヤを切断するという制御動作を一連して行うようにしている。
【００１０】
ところが、本発明の補修方法で行うワイヤボンディング制御では、本来のワイヤリングのためのボンディング制御にはない制御、即ち、機能試験用パッドのプローブ跡孔上にキャピラリを位置させるという制御があり、更には、本来のワイヤリングのためのボンディング制御、即ち、キャピラリをリードフレーム上に移動させ、二次ワイヤボンディングを行う制御が省略されており、一次ワイヤボンディング終了後、本来の二次ワイヤボンディング後に行われるワイヤ切断制御に直ちに移行するものである。
【００１１】
従って、本来のワイヤボンディング装置の制御プログラム中に、本来のワイヤリング工程よりなるワイヤリングモードと、本発明に係るプローブ跡孔補修のための補修モードとを設定しておけば、一台のワイヤボンディング装置で本来のワイヤリングと本発明のプローブ跡孔補修とを実行することができ、しかも、これらを連続して行うことができる。
【００１２】
【実施例】
本発明の実施例について図面を参照して説明する。
【００１３】
図１は、本発明に使用するワイヤボンディング装置Ａを示しており、同装置Ａは、半導体チップＣを搭載したリードフレーム17を供給・搬送・収納するためのローダ部１、フィーダ部２及びアンローダ部３と、フィーダ部２の一側に設置したＸ−Ｙテーブル４と、同Ｘ−Ｙテーブル４上に載設したボンディングヘッド部５とで構成されている。
【００１４】
ボンディングヘッド部５は、フィーダ部２の上方に延出したツールホルダ６と、同ツールホルダ６の先端に垂設したキャピラリ７と、同キャピラリの上方に設置したクランパ８と、キャピラリ７の斜め上方に設置したカメラ９とで構成されている。図中、10はモニタ用ＣＲＴである。
【００１５】
かかる構成によって、通常のワイヤリング作業を行う場合には、カメラ９が撮影した画像からワイヤリングすべきパッドとリードフレームとの座標を判断し、同座標に基づきＸ−Ｙテーブル４を作動させて、半導体チップＣとリードフレームとの間のワイヤリングを行うことができる。
【００１６】
図２及び図３は、プローブ跡孔11がある機能試験用パッド12を示しており、機能試験用パッド12は、半導体チップＣに形成された集積回路の所要箇所に導通したアルミニウム薄膜で形成されており、同機能試験用パッド12には機能試験装置のプローブを圧着して欠陥の有無を検出するために、プローブ跡孔11が形成され痕跡として残っている。
【００１７】
プローブ跡孔11には、図２及び図３に示すような機能試験用パッド12の上面中央に形成された略円錐形状の凹部の他に、プローブ先端の形状によっては断面視略Ｕ字形状の凹部になる場合もある。
【００１８】
図４は、上記プローブ跡孔11を埋め戻しにより補修するための補修モードにおけるキャピラリ７上下動のタイミングチャートを示している。
【００１９】
同補修モードは、位置決め工程P0と、一次ワイヤボンディング工程P1と、ワイヤ切断工程P3とで構成されている。
【００２０】
図５〜図７は、上記タイミングチャートの各時点における各部の作動状態を示しており、図中、13は金線よりなるワイヤ14を巻回したスプールである。
【００２１】
位置決め工程P0では、Ｘ−Ｙテーブル４を作動させて、図５で示すように、キャピラリ７を機能試験用パッド12のプローブ跡孔11の直上方に位置させる。
【００２２】
一次ワイヤボンディング工程P1では、加熱手段15により、キャピラリ７を挿通した金ワイヤ14の先端を溶融させて金ボール16を形成させ、図６で示すように、キャピラリ７を下降させてプローブ跡孔11上に溶融した金ボール16を圧着して同プローブ跡孔11を埋め戻す。なお、上記埋め戻しに際して、プローブ跡孔11を金ボール16で完全に充填するのが望ましいが、酸化や腐食の悪影響を及ぼさない程度であれば僅かな空間が残っても差支えない。
【００２３】
また、上記金ボール16の圧着に際して、キャピラリ７を高周波振動（超音波）させて、金ボール16の充填効果を高めることもできる。
【００２４】
次いで、ワイヤ切断工程P3に移行し、図７で示すように、クランパ８でワイヤ14を把持しながら、キャピラリ７を直上方に上昇させてワイヤ14を切断して、プローブ跡孔11の補修を終了する。
【００２５】
なお、上記加熱手段15には、小さな火炎を噴出するトーチでワイヤ14の先端を溶融して金ボール16を形成したり、ワイヤ14の先端にスパークを発生させて同先端に金ボール16を形成する方法がある。図５〜図７中、18はアイランドである。
【００２６】
図８は、プローブ跡孔11補修後の機能試験用パッド12を示しており、このようにプローブ跡孔11が金ボール16で充填閉塞されていることから、モールド樹脂で封止した後にもプローブ跡孔11に空気や水分が残留せず、同空気や水分による機能試験用パッド12や、その周辺のパッド及び配線の酸化や腐食を防止することができ、かかる酸化や腐食による導通不良等の不良の発生を防止することができる。
【００２７】
なお、上記した本発明の実施例以外にも、半導体チップを具備した半導体装置において、機能試験用パッドに限らず、一般的なパッドの上面側に、プローブ跡孔11に限らない凹部が形成された場合にも、同凹部を低腐食性物質で覆うことにより、モールド樹脂で封止後、パッドの凹部に空気や水分が滞溜せず、従って、パッドの酸化や腐食が防止され、不良品発生や信頼性低下を防止することができる。
【００２８】
なお、プローブ跡孔11に限らない凹部としては、ボンデイング時に、キャピラリ等の治具が移動する際、同治具の先端がパッドの表面に接触して形成された凹部が考えられる。
【００２９】
図９は、本来のワイヤリングモードおけるキャピラリ７上下動のタイミングチャートを示しており、この場合は、目標値をワイヤリングのためのパッドの座標としたＸ−Ｙテーブル４の作動により、キャピラリ７をワイヤリングのためのパッドの直上方に位置させる位置決め工程P0を行い、次に、同パッドに一次ワイヤボンディング工程P1を施し、次いで、二次ワイヤボンディングP2、即ち、Ｘ−Ｙテーブル４の作動によるキンクやリバースと、リードフレーム17へのワイヤボンディングとを施し、最後に、ワイヤ切断工程P3を行うものである。なお、本来のワイヤリングモードにおける二次ワイヤボンディング工程P2では、半導体チップＣとリードフレーム17との間に高低差があるため、その分だけキャピラリ７の下動量にオフセット19を設けている。
【００３０】
かかる本来のワイヤリングモードのタイムチャート（図９）と、前記補修モードのタイミングチャート（図４）とを比較すると、キャピラリ７の上下動に関しては、ワイヤリングモードのタイミングチャート（図９）から、二次ワイヤボンディング工程P2の動作を省略したものと、補修モード（図４）とが等しいことがわかる。
【００３１】
従って、本来のワイヤリングモードの制御プログラムの簡単な改造、即ち、前記位置決め工程P0の目標値をプローブ跡孔11の座標として一次ワイヤボンディングP1を行い、二次ワイヤボンディングP2のための制御プログラムを省略して、一次ワイヤボンディングP1から、直接、切断工程P3に移行させることにより、容易に補修モードの制御プログラムを構成することができる。
【００３２】
また、これらのモードの切換えにより、一台のワイヤボンディング装置Ａで、半導体チップＣとリードフレーム17との間のワイヤリングと、プローブ跡孔11の埋め戻し補修とを連続して行うことができる。
【００３３】
【発明の効果】
本発明によれば、半導体チップの機能試験用パッド等のパッドに形成されたプローブ跡孔等の凹部を、低腐食性物質で埋め戻しているので、モールド樹脂で半導体チップを封止した後に、プローブ跡孔等の凹部に空気や水分が残留せず、従って、機能試験用パッド等のパッドの酸化や腐食が防止され、不良品発生や信頼性低下を防止することができる。しかも、低腐食性物質での埋め戻しをワイヤボンディング装置によって行う場合に、ワイヤボンディング装置に、半導体チップへ行う一次ワイヤボンディング工程と、半導体チップを搭載したリードフレームへ行う二次ワイヤボンディング工程と、ボンディング終了後のワイヤ切断工程とよりなるワイヤリングモードと、このワイヤリングモードの二次ワイヤボンディング工程を省略して、一次ワイヤボンディング工程から、直接ワイヤ切断工程に移行する補修モードを設定して、制御プログラムによってワイヤリングモードと補修モードとを切換えることにより、一台のワイヤボンディング装置で、半導体チップとリードフレーム間のワイヤリングと、プローブ跡孔補修とを連続して行うことができる。
【図面の簡単な説明】
【図１】ワイヤボンディング装置の構成を示す斜視説明図。
【図２】プローブ跡孔がある機能試験用パッドの平面図。
【図３】図２におけるＩ−Ｉ線による断面図。
【図４】補修モードにおけるキャピラリ上下動のタイミングチャート。
【図５】一次ワイヤボンディング工程開始時の状態を示す説明図。
【図６】一次ワイヤボンディング工程終了時の状態を示す説明図。
【図７】ワイヤ切断工程を示す説明図。
【図８】プローブ跡孔補修後の機能試験用パッドの側面図。
【図９】本来のワイヤリングモードにおけるキャピラリ上下動のタイミングチャート。
【符号の説明】
Ｃ 半導体チップ
P1 一次ワイヤボンディング工程
P2 二次ワイヤボンディング工程
P3 ワイヤ切断工程
11 プローブ跡孔
12 機能試験用パッド
14 ワイヤ
17 リードフレーム[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device including a functionally tested semiconductor chip and a functional test trace repair method for the semiconductor chip.
[0002]
[Prior art]
Conventionally, a semiconductor chip has been provided with a functional test pad for performing a functional test of the semiconductor chip during the IC manufacturing process separately from the wiring pad. Prior to the packaging process, the functional test pad is formed. Further, the function test of the semiconductor chip is conducted by pressing the probe of the function test apparatus.
[0003]
[Problems to be solved by the invention]
However, since the probe is needle-shaped, a probe trace hole like a trace protruding with a needle remains on the upper surface of the functional test pad, and even if sealed with mold resin, the trace hole is sufficiently filled. Therefore, even after sealing with mold resin, moisture and air remain in the trace hole, and this moisture and oxygen in the air are used for functional test pads and wiring pads adjacent thereto. Corrosion and oxidation of the steel caused defective products and reduced reliability.
[0004]
Therefore, a semiconductor device having the semiconductor chip of the present invention has a wiring pad for bonding a wire made of a low corrosive substance by a wire bonding apparatus, and a pad provided separately from the wiring pad. The pad is a semiconductor device having a semiconductor chip in which a recess is formed in a pad provided separately, and the wire is pressed into the recess of the pad having the recess by the wire bonding apparatus and then the wire is cut. Thus, the recess was filled with a low corrosive substance, and a wire was bonded to the wiring pad by the wire bonding apparatus to form a semiconductor device having a semiconductor chip .
[0005]
Further, in the functional test trace repair method for a semiconductor chip of the present invention, a wiring pad to which a wire made of a low corrosive substance is bonded, and a semiconductor chip having a functional test pad provided separately from the wiring pad are provided. Wiring to the wiring pad is performed in the wiring mode of the wire bonding apparatus that continuously executes the wiring mode and the repair mode by the control program for the probe hole formed in the functional test pad , and the functional test in the repair mode. The probe trace hole was backfilled with a low corrosive substance by crimping the wire to the pad and cutting the wire. Further, the wiring mode includes a primary wire bonding process performed on the semiconductor chip, a secondary wire bonding process performed on the lead frame on which the semiconductor chip is mounted, and a wire cutting process after the bonding is completed. The present invention is also characterized in that the wire bonding step is omitted and the primary wire bonding step is shifted directly to the wire cutting step.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
In the semiconductor device of the present invention, the concave portion formed on the upper surface side of the semiconductor chip is covered with a low corrosive substance, and the semiconductor chip has a probe trace hole of the functional test pad filled with the low corrosive substance. Therefore, after sealing with mold resin, air and moisture do not remain in the probe trace hole. Therefore, oxidation and corrosion of the functional test pad can be prevented, and generation of defective products and reduction in reliability can be prevented. .
[0007]
Further, in the repair method of the present invention, the same process as the wire bonding performed on the wiring pad of the semiconductor chip is applied to the probe trace hole remaining in the functional test pad, and then the probe trace is cut by cutting the wire. The hole is repaired by backfilling with a ball as a residual wire welded to the hole.
[0008]
That is, a part of the bonding control for wiring is changed, the capillary is positioned immediately above the probe trace hole of the functional test pad, and in this state, the capillary is moved down, and the tip of the wire inserted through the capillary is moved. Wire bonding is performed by crimping a gold ball to the probe trace hole of the functional test pad, and after the wire bonding, the capillary is moved up and separated from the wiring pad, and the probe trace is repaired by cutting the wire. Like to do.
[0009]
In the original bonding for wiring, the capillary is positioned directly above the wiring pad, the capillary is moved down, and the ball formed at the tip of the wire inserted through the capillary is pressed against the wiring pad. Perform primary wire bonding, and after the primary wire bonding, move the capillary up and away from the wiring pad, then move the capillary above the inner lead and move the capillary down to perform secondary wire bonding, Thereafter, a series of control operations of cutting the wire is performed.
[0010]
However, in the wire bonding control performed by the repair method of the present invention, there is a control that is not in the bonding control for the original wiring, that is, the control of positioning the capillary over the probe hole of the functional test pad, Bonding control for the original wiring, that is, control for moving the capillary onto the lead frame and performing the secondary wire bonding is omitted. After the primary wire bonding is completed, the wire is performed after the original secondary wire bonding. The process immediately shifts to the cutting control.
[0011]
Therefore, if the wiring mode consisting of the original wiring process and the repair mode for repairing the probe hole according to the present invention are set in the control program of the original wire bonding apparatus, one wire bonding apparatus Thus, the original wiring and the probe hole repair of the present invention can be performed, and these can be continuously performed.
[0012]
【Example】
Embodiments of the present invention will be described with reference to the drawings.
[0013]
FIG. 1 shows a wire bonding apparatus A used in the present invention, which includes a loader section 1, a feeder section 2 and an unloader for supplying, transporting and storing a lead frame 17 on which a semiconductor chip C is mounted. Part 3, an XY table 4 installed on one side of the feeder part 2, and a bonding head part 5 placed on the XY table 4.
[0014]
The bonding head unit 5 includes a tool holder 6 that extends above the feeder unit 2, a capillary 7 that is suspended from the tip of the tool holder 6, a clamper 8 that is installed above the capillary, and a diagonally upper portion of the capillary 7. It is comprised with the camera 9 installed in. In the figure, reference numeral 10 denotes a monitor CRT.
[0015]
With this configuration, when normal wiring work is performed, the coordinates of the pad to be wired and the lead frame are determined from the image taken by the camera 9, and the XY table 4 is operated based on the coordinates to perform the semiconductor operation. Wiring between the chip C and the lead frame can be performed.
[0016]
2 and 3 show a functional test pad 12 having a probe mark hole 11. The functional test pad 12 is formed of an aluminum thin film that is conducted to a required portion of an integrated circuit formed on the semiconductor chip C. FIG. In order to detect the presence / absence of a defect by crimping the probe of the function test apparatus on the function test pad 12, a probe trace 11 is formed and remains as a trace.
[0017]
In addition to the substantially conical recess formed in the center of the upper surface of the functional test pad 12 as shown in FIGS. 2 and 3, the probe hole 11 has a substantially U-shaped cross-sectional view depending on the shape of the probe tip. There may be a recess.
[0018]
FIG. 4 shows a timing chart of the up and down movement of the capillary 7 in the repair mode for repairing the probe hole 11 by backfilling.
[0019]
The repair mode includes a positioning process P0, a primary wire bonding process P1, and a wire cutting process P3.
[0020]
5 to 7 show the operating state of each part at each point in the timing chart, in which 13 is a spool around which a wire 14 made of a gold wire is wound.
[0021]
In the positioning step P0, the XY table 4 is operated, and the capillary 7 is positioned immediately above the probe trace hole 11 of the functional test pad 12 as shown in FIG.
[0022]
In the primary wire bonding step P1, the tip of the gold wire 14 inserted through the capillary 7 is melted by the heating means 15 to form a gold ball 16, and the capillary 7 is lowered as shown in FIG. The molten gold ball 16 is pressure-bonded to fill the probe hole 11 back. In the above refilling, it is desirable to completely fill the probe hole 11 with the gold ball 16, but a slight space may be left as long as it does not adversely affect oxidation and corrosion.
[0023]
Further, when the gold ball 16 is pressure-bonded, the filling effect of the gold ball 16 can be enhanced by vibrating the capillary 7 with high frequency (ultrasonic waves).
[0024]
Next, the process proceeds to a wire cutting step P3, and as shown in FIG. 7, while holding the wire 14 with the clamper 8, the capillary 7 is lifted directly upward to cut the wire 14 to repair the probe hole 11. finish.
[0025]
In the heating means 15, the tip of the wire 14 is melted with a torch that emits a small flame to form a gold ball 16, or a spark is generated at the tip of the wire 14 to form the gold ball 16 at the tip. There is a way to do it. 5-7, 18 is an island.
[0026]
FIG. 8 shows the functional test pad 12 after repairing the probe trace 11, and since the probe trace 11 is filled and closed with the gold ball 16 in this way, the probe is sealed even after sealing with the mold resin. Air and moisture do not remain in the trace hole 11, and the function test pad 12 and its surrounding pads and wiring due to the air and moisture can be prevented from being oxidized and corroded. The occurrence of defects can be prevented.
[0027]
In addition to the above-described embodiments of the present invention, in a semiconductor device including a semiconductor chip, not only a functional test pad but also a recess not limited to the probe trace hole 11 is formed on the upper surface side of a general pad. In this case, by covering the recess with a low-corrosive substance, after sealing with mold resin, air and moisture do not stay in the recess of the pad. Therefore, oxidation and corrosion of the pad are prevented, resulting in a defective product. Occurrence and deterioration of reliability can be prevented.
[0028]
Note that the recess not limited to the probe trace hole 11 may be a recess formed by contacting the tip of the jig with the surface of the pad when a jig such as a capillary moves during bonding.
[0029]
FIG. 9 shows a timing chart of the vertical movement of the capillary 7 in the original wiring mode. In this case, the capillary 7 is wired by the operation of the XY table 4 with the target value as the coordinates of the pad for wiring. A positioning process P0 is performed to be positioned directly above the pad for the first, then a primary wire bonding process P1 is performed on the pad, and then a secondary wire bonding P2, that is, a kink or the like by the operation of the XY table 4 is performed. Reverse and wire bonding to the lead frame 17 are performed, and finally a wire cutting step P3 is performed. In the secondary wire bonding process P2 in the original wiring mode, since there is a difference in height between the semiconductor chip C and the lead frame 17, an offset 19 is provided in the downward movement amount of the capillary 7 accordingly.
[0030]
Comparing the original wiring mode time chart (FIG. 9) and the repair mode timing chart (FIG. 4), the up and down movement of the capillary 7 is determined from the wiring mode timing chart (FIG. 9). It can be seen that the operation in the wire bonding step P2 is omitted and the repair mode (FIG. 4) is equal.
[0031]
Therefore, a simple modification of the original wiring mode control program, that is, the primary wire bonding P1 is performed with the target value of the positioning step P0 as the coordinates of the probe trace hole 11, and the control program for the secondary wire bonding P2 is omitted. Then, the control program in the repair mode can be easily configured by shifting directly from the primary wire bonding P1 to the cutting process P3.
[0032]
Further, by switching between these modes, the wiring between the semiconductor chip C and the lead frame 17 and the backfill repair of the probe trace hole 11 can be continuously performed by one wire bonding apparatus A.
[0033]
【The invention's effect】
According to the present invention, since the concave portions such as probe trace holes formed in the pads such as the functional test pads of the semiconductor chip are backfilled with the low corrosive substance, after sealing the semiconductor chip with the mold resin, Air and moisture do not remain in the concave portions such as the probe trace holes, and therefore, oxidation and corrosion of pads such as functional test pads can be prevented, and generation of defective products and deterioration of reliability can be prevented. In addition, when backfilling with a low corrosive substance is performed by a wire bonding apparatus, the wire bonding apparatus includes a primary wire bonding process performed on a semiconductor chip, and a secondary wire bonding process performed on a lead frame on which the semiconductor chip is mounted, A control program that sets a repair mode in which a wire cutting process consisting of a wire cutting process after the completion of bonding and a secondary wire bonding process in this wiring mode are omitted, and a transition is made directly from the primary wire bonding process to the wire cutting process. By switching between the wiring mode and the repair mode, the wiring between the semiconductor chip and the lead frame and the probe trace hole repair can be continuously performed with a single wire bonding apparatus.
[Brief description of the drawings]
FIG. 1 is an explanatory perspective view showing a configuration of a wire bonding apparatus.
FIG. 2 is a plan view of a functional test pad having a probe mark hole.
3 is a cross-sectional view taken along the line II in FIG.
FIG. 4 is a timing chart of capillary vertical movement in the repair mode.
FIG. 5 is an explanatory view showing a state at the start of a primary wire bonding process.
FIG. 6 is an explanatory diagram showing a state at the end of the primary wire bonding process.
FIG. 7 is an explanatory view showing a wire cutting step.
FIG. 8 is a side view of a functional test pad after repairing a probe hole.
FIG. 9 is a timing chart of capillary up and down movement in the original wiring mode.
[Explanation of symbols]
C Semiconductor chip
P1 Primary wire bonding process
P2 Secondary wire bonding process
P3 Wire cutting process
11 Probe hole
12 Functional test pads
14 wire
17 Lead frame

Claims (3)

ワイヤボンディング装置によって低腐食性物質からなるワイヤがボンディングされるワイヤリング用パッドと、このワイヤリング用パッドとは別途に設けたパッドを有し、ワイヤリング用パッドとは別途に設けたパッドに凹部が形成された半導体チップを具備する半導体装置であって、
凹部を有するパッドの凹部には前記ワイヤボンディング装置によってワイヤを圧着してからワイヤを切断することにより凹部に低腐食性物質を充填し、ワイヤリング用パッドには前記ワイヤボンディング装置によってワイヤをボンディングしてワイヤリングを行ったことを特徴とする半導体チップを具備する半導体装置。There is a wiring pad to which a wire made of a low corrosive substance is bonded by a wire bonding apparatus, and a pad provided separately from the wiring pad, and a recess is formed in the pad provided separately from the wiring pad. A semiconductor device comprising a semiconductor chip,
The recess of the pad having a recess filled with a low-corrosive materials in the recess by cutting a wire after crimp the wire by the wire bonding apparatus, the wiring pad by bonding the wire by the wire bonding apparatus A semiconductor device comprising a semiconductor chip, wherein wiring is performed . 低腐食性物質からなるワイヤがボンディングされるワイヤリング用パッドと、このワイヤリング用パッドとは別途に設けた機能試験用パッドを有する半導体チップの機能試験用パッドに形成されたプローブ跡孔を、
制御プログラムによってワイヤリングモードと補修モードとを連続して実行するワイヤボンディング装置のワイヤリングモードにおいてワイヤリング用パッドへのワイヤリングを行うとともに、補修モードにおいて機能試験用パッドにワイヤを圧着するとともにワイヤを切断することにより、プローブ跡孔を低腐食性物質で埋め戻すことを特徴とする半導体チップの機能試験痕跡補修方法。A probe mark hole formed in a functional test pad of a semiconductor chip having a wiring test pad to which a wire made of a low corrosive substance is bonded, and a functional test pad provided separately from the wiring pad,
In the wiring mode of the wire bonding apparatus that continuously executes the wiring mode and the repair mode according to the control program, the wiring to the wiring pad is performed, and the wire is crimped to the functional test pad and the wire is cut in the repair mode. The semiconductor chip functional test trace repair method characterized in that the probe trace hole is backfilled with a low corrosive substance. ワイヤリングモードは、半導体チップへ行う一次ワイヤボンディング工程と、同半導体チップを搭載したリードフレームへ行う二次ワイヤボンディング工程と、ボンディング終了後のワイヤ切断工程とからなり、補修モードでは、二次ワイヤボンディング工程を省略して、一次ワイヤボンディング工程から、直接ワイヤ切断工程に移行することを特徴とする請求項２記載の半導体チップの機能試験痕跡補修方法。 The wiring mode includes a primary wire bonding process performed on the semiconductor chip, a secondary wire bonding process performed on the lead frame on which the semiconductor chip is mounted, and a wire cutting process after the bonding is completed. In the repair mode, the secondary wire bonding process is performed. 3. The semiconductor chip functional test trace repair method according to claim 2, wherein the step is omitted and the process directly moves from the primary wire bonding step to the wire cutting step .
JP3527096A 1996-02-22 1996-02-22 Semiconductor device including semiconductor chip and functional test trace repair method for the chip Expired - Fee Related JP3756234B2 (en)

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