JP3077487B2 - High frequency circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to transmission of high-frequency circuits.
It is about railway tracks .

[0002]

2. Description of the Related Art In recent years, distributed coupling lines used in high-frequency semiconductor devices are often used in which side ends of lines having a microstrip structure formed on the same surface are coupled. In such a method, a method of making the coupling lines overlap each other or a method of placing another conductor on the coupling line via an insulating plate is used.

FIGS. 10, 11, and 12 show the configuration of a conventional distributed coupling line. In FIG. 10, 101 is a ground conductor, 102 is a dielectric substrate, 103 and 104 are parallel coupling lines, a dielectric substrate 102 is provided on the ground conductor 101, and parallel coupling lines 103 and 104 are provided thereon, It operates as two distributed coupling parallel lines.

FIG. 11 shows a structure in which the coupling lines overlap each other in order to increase the degree of coupling.
The degree of coupling is increased by increasing the coupling area of 104. 105 is a ground conductor.

FIG. 12 shows a structure in which a conductor 106 is provided on a two distributed coupling parallel lines via a dielectric 107.
106 is used as an overlay conductor, and 107 is used as an overlay dielectric, and the characteristics are improved by taking an overlay structure.

[0006]

However, in the above-mentioned conventional configuration, the distributed coupling line is provided on the substrate in advance, and the overlay conductor is also formed on the overlay dielectric, so that the coupling degree is later determined. There was a problem that it was difficult to adjust.

SUMMARY OF THE INVENTION An object of the present invention is to provide a low-loss high-frequency circuit which solves the above-mentioned conventional problems, increases the degree of freedom in design, facilitates adjustment of the degree of coupling of a coupling line, and facilitates adjustment. .

[0008]

To achieve this object, a high-frequency circuit according to the present invention comprises a first ground conductor provided on a lower surface of a first dielectric, and a first ground conductor provided on the first dielectric. A center conductor is provided, a second ground conductor is provided at a predetermined distance above the first center conductor by flip-chip mounting, and a first ground conductor is provided on a side of the second ground conductor facing the first dielectric.
And a second central conductor is provided above the first central conductor on the first dielectric film, and is distributedly coupled with the first central conductor.

Also, a first ground conductor is provided on the lower surface of the first dielectric, a first center conductor is provided on the first dielectric, and a flip is provided at a predetermined distance above the first center conductor. Providing a second dielectric by chip-type mounting, and providing a second central conductor above the first central conductor on the side of the second dielectric facing the first dielectric; With a central conductor.

[0010] The degree of coupling may be adjusted by changing the line width of the first center conductor and the second center conductor.

Further, a configuration may be employed in which the degree of coupling is adjusted by providing a second center conductor obliquely above the first center conductor.

A first ground conductor is provided on a lower surface of the first dielectric, and third and fourth center conductors are provided in parallel on the first dielectric at a predetermined interval. A conductor provided by flip-chip mounting at a predetermined distance above the third and fourth center conductors, wherein the conductor is the first conductor;
Has an overlay structure.

A first ground conductor is provided on a lower surface of the first dielectric, and third and fourth central conductors are provided in parallel on the first dielectric at a predetermined interval. A third dielectric provided by flip-chip mounting above the third and fourth central conductors by a fixed distance, and a conductor above the third and fourth central conductors on the third dielectric; And an overlay structure is formed by using the conductor as a second overlay conductor.

A third overlay conductor is provided on the first dielectric, and a third ground conductor provided by flip-chip mounting above the third overlay conductor by a fixed distance is provided. A second dielectric film is laminated on the third dielectric conductor on the first dielectric side, and a fifth dielectric film is formed on the second dielectric film above the third overlay conductor.
And a sixth central conductor is provided to form an overlay structure.

Further, a fourth ground conductor is provided on the first dielectric at regular intervals to form a slot line,
A fifth ground conductor provided by flip-chip mounting above the fourth ground conductor by a fixed distance,
A third dielectric film is provided on a side of the fifth ground conductor facing the fourth ground conductor, and a seventh center conductor is provided above the slot line on the third dielectric film; By forming a microstrip line, the microstrip line and the slot line are combined.

A first ground conductor is provided on the lower surface of the first dielectric, an eighth center conductor is provided on the first dielectric, and a microstrip line is formed. A fourth dielectric provided by a flip-chip mounting above the conductor by a fixed distance, and a sixth dielectric on the fourth dielectric facing the eight central conductors at a predetermined interval. By providing a ground conductor and forming a slot line, the microstrip line and the slot line are coupled.

[0017]

The ground conductor may be formed using a silicon substrate with a high impurity implantation amount.

The dielectric film may be formed using a silicon nitride film or a silicon oxide film.

The dielectric may be formed using gallium arsenide.

[0021]

According to this configuration, the distance between the lines to be coupled and the line width can be appropriately adjusted. Since air is used as a part of the dielectric, a low-loss distribution having a coupling degree suitable for the purpose of use is provided. A coupled line is obtained.

[0022]

(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1A is a partially cutaway perspective view of a high-frequency circuit according to a first embodiment of the present invention, and FIG. 1B is a sectional side view of the same.

In FIG. 1, reference numeral 1 denotes a first ground conductor provided on the lower surface of the first dielectric 2; 3, a first center conductor provided on the first dielectric 2; A conductor provided by flip-chip mounting above the center conductor 3 by a predetermined distance, and 6 is a first dielectric film in which the conductor 5 is laminated on the side facing the first dielectric 2 as a second ground conductor. Reference numeral 4 denotes a second central conductor provided above the first central conductor 2 on the first dielectric film 6, and reference numeral 7 denotes a bump.

A first center conductor 3 serving as a coupling line is provided on the first dielectric 2, and a predetermined interval is provided on both sides thereof so as not to affect each other.
A bump 7 is provided, and a second ground conductor 5 provided with a second central conductor 4 serving as a coupling line by flip-chip mounting is provided.

The first and second center conductors 3 and 4 are formed in the length direction of the transmission line with a desired line width. For example, the height of the bump 7 is 10 μm, the relative permittivity of the first dielectric 2 and the first dielectric film 6 is 1, and the thickness of the first dielectric 2 is 45 μm.
m, the line width is about 70 μm, the characteristic impedance is 50Ω, and the coupling degree is about 2.4 dB.
A sufficient degree of coupling can be ensured even in the millimeter wave band.

The degree of coupling between the first and second center conductors 3 and 4 serving as a coupling line is determined by the height of the bump 7, and the degree of coupling can be easily adjusted by appropriately changing the height of the bump 7. In addition, the dielectric between the coupling lines is air, so that the loss is low.

The first ground conductor 1 can be formed using a metal deposited on a semiconductor substrate or a silicon substrate having a high impurity implantation amount.

For example, gallium arsenide, a silicon nitride film, or a silicon oxide film may be used as the first dielectric 2 and the first dielectric film 6.

Embodiment 2 Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a diagram showing a high-frequency circuit according to a second embodiment of the present invention.
It is a sectional side view of a wave circuit .

FIG. 2 is different from the configuration of FIG.
1 in that a second dielectric 8 is mounted by a flip-chip method instead of the second ground conductor 5 in FIG. 1, and the second center conductor 4 is provided there.

According to the above configuration, the first center conductor 3 provided on the first dielectric 2 and the first center conductor 3 provided on the second dielectric 8
The second center conductor 4 provided above the first center conductor 3 on the side facing the dielectric 2 has a microstrip line structure with the first ground conductor 1, and the height of the bump 7 is reduced. By changing the distance between the line conductors,
By adjusting the width of the line conductor, the degree of coupling can be easily adjusted, and a low-loss parallel coupled line can be realized because the dielectric between the lines is air.

Embodiment 3 Hereinafter, a third embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a diagram showing a high-frequency circuit according to the third embodiment of the present invention.
It is a sectional side view of a wave circuit .

FIG. 3 differs from the configuration of FIG.
The point is that the line widths of the first center conductor 3A and the second center conductor 4A are changed.

The first center conductor 3A and the second center conductor 4A
Are different line widths, it is possible to change the odd / even impedance of the coupling line formed by the first and second center conductors 3A and 4A. By changing the line width of the coupling line in this way, it is possible to adjust the odd / even impedance of the coupling line and to realize a parallel coupling line in which the degree of coupling can be easily adjusted.

Embodiment 4 Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings. FIG. 4 is a view showing a high-frequency circuit according to the fourth embodiment of the present invention.
It is a sectional side view of a wave circuit .

FIG. 4 differs from the configuration of FIG.
This is a point that the second center conductor 4B is offset by being provided not obliquely above but directly above the first center conductor 3B.

The first center conductor B3 and the second center conductor 4B
Is determined by the coupling area between the lines, but the two coupled lines are not directly opposed,
By shifting and offsetting, it is possible to realize a parallel coupling line in which the coupling area is adjusted and the coupling degree can be easily adjusted.

Embodiment 5 Hereinafter, a fifth embodiment of the present invention will be described with reference to the drawings. FIG. 5 is a view showing a high-frequency circuit according to a fifth embodiment of the present invention.
It is a sectional side view of a wave circuit .

In FIG. 5, reference numeral 1 denotes a first ground conductor provided on the lower surface of the first dielectric 2;
Third and fourth parallel members provided at predetermined intervals on the dielectric 2 of FIG.
Center conductor 11 is provided by a fixed distance above the third and fourth center conductors by flip-chip mounting.
Are conductors to be used as overlay conductors.

Note that a third center conductor 9 and a fourth center conductor 10 which are distributed coupled parallel lines are provided on the first dielectric 2 in parallel at a predetermined interval, and on both sides thereof. At predetermined intervals, the bumps 7 are provided so as not to affect each other, and the overlay conductor 11 is provided by flip-chip mounting.

The third and fourth central conductors 9, 10 are formed in the length direction of the transmission line with a desired line width.

Since the influence of the overlay conductor 11 changes by changing the height of the bump 7, the distributed coupling parallel line composed of the third and fourth center conductors 9 and 10 can easily adjust the degree of coupling. And the overlay dielectric between the distributed coupling line and the overlay conductor 11 is air, so that the loss is low.

The first ground conductor 1 can be formed using a metal deposited on a semiconductor substrate or a silicon substrate having a high impurity implantation amount.

For example, gallium arsenide may be used as the first dielectric 2. In the present embodiment, the first
When the first overlay conductor 11 and the distributed coupling parallel line do not come into contact with each other when the overlay conductor 11 is brought closer to the distributed coupling parallel line, the bump 7 may not be used.

Embodiment 6 Hereinafter, a sixth embodiment of the present invention will be described with reference to the drawings. FIG. 6 is a view showing a high-frequency circuit according to the sixth embodiment of the present invention.
It is a sectional side view of a wave circuit .

FIG. 6 differs from the configuration of FIG.
The point is that the second overlay conductor 13 is provided on the third dielectric 12 and flip-chip mounted so that the third and fourth center conductors 9 and 10 and the second overlay conductor 13 face each other.

The second overlay conductor 13 is formed above the third and fourth center conductors 9 and 10 so as to cover the third and fourth center conductors 9 and 10.
By changing the area and position of No. 3, the degree of coupling can be adjusted.

The degree of coupling between the third and fourth center conductors 9 and 10 can also be increased by mounting only the third dielectric body by the flip-chip method without providing the second overlay conductor 13. . In this case, the bumps 7 need not be used.

Embodiment 7 Hereinafter, a seventh embodiment of the present invention will be described with reference to the drawings. FIG. 7 is a diagram showing a high-frequency circuit according to the seventh embodiment of the present invention.
It is a sectional side view of a wave circuit .

In FIG. 7, reference numeral 14 denotes a conductor provided on the first dielectric 2, and third ground conductor 18 denotes an overlay conductor.
The body 14 is a third overlay conductor, and a conductor provided by flip-chip mounting above the overlay conductor 14 by a fixed distance. Reference numeral 17 denotes a conductor of the third ground conductor 18 using the conductor 18 as a third ground conductor. The second dielectric films 15 and 16 laminated on the side facing the first dielectric 2 are arranged above the third overlay conductor 18 on the second dielectric film 17 at a constant interval in parallel. The fifth and sixth central conductors provided.

A third overlay conductor 14 is provided on the first dielectric 2, and bumps 7 are provided on both sides thereof at predetermined intervals so as not to affect each other. A third ground conductor 18 is provided by chip-type mounting, and a second dielectric film 17 is laminated on a side of the third ground conductor 18 facing the third overlay conductor 14. Fifth and sixth central conductors 15 and 16 are provided at a fixed interval above the third overlay conductor 14 on the dielectric film 17, and these are used as distributed coupling parallel lines.

According to the above configuration, the distributed coupling parallel line constituted by the fifth and sixth center conductors 15 and 16 is the sixth parallel conductor.
As in the embodiment, the coupling degree can be adjusted by changing the height of the bumps 7 or changing the area and position of the overlay conductor 14.

For example, gallium arsenide, a silicon nitride film, or a silicon oxide film may be used as the first dielectric 2 and the second dielectric film 17.

Embodiment 8 Hereinafter, an eighth embodiment of the present invention will be described with reference to the drawings. FIG. 8 is a view showing a high-frequency circuit according to the eighth embodiment of the present invention.
It is a sectional side view of a wave circuit .

FIG. 8 shows conversion between a microstrip line and a slot line. In FIG. 8, reference numeral 2 denotes a first dielectric, 7 denotes a bump, 19 denotes a fourth ground conductor, and 20 denotes a seventh center. A conductor, 21 is a third dielectric film, and 22 is a fifth ground conductor.

A fourth ground conductor 19 is provided on the first dielectric 2 at a constant interval, and is provided on the fourth ground conductor 19 at a predetermined interval. The bump 7 is provided so as not to affect the interval, the fifth ground conductor 22 is provided by flip-chip mounting, and the fifth ground conductor 22 facing the fourth ground conductor 19 is A third dielectric film 21 is laminated, and a seventh center conductor 20 is provided above the third dielectric film 21 at an interval above the fourth ground conductor 19. The space between the two lines is defined as a slot line and the seventh center conductor 20 as a microstrip line.

The seventh center conductor 20 and the fourth ground conductor 19
Can be adjusted by changing the height of the bump 7 or changing the intersection angle.

Embodiment 9 Hereinafter, a ninth embodiment of the present invention will be described with reference to the drawings. FIG. 9 is a view showing a high-frequency circuit according to the ninth embodiment of the present invention.
It is a sectional side view of a wave circuit .

This embodiment also shows a microstrip line and a slot line conversion circuit. The difference from the eighth embodiment shown in FIG. 8 is that the slot line is formed by flip-chip mounting. . 9, 1 is a first ground conductor, 2 is a first dielectric, 7 is a bump, 23
Is the eighth center conductor, 24 is the sixth ground conductor, 25 is the fourth
Of dielectric material.

An eighth center conductor 23 is provided on the first dielectric 2 having the first ground conductor 1 on the lower surface, and a predetermined interval is provided on both sides thereof so as not to affect each other. Then, a bump 7 is provided, a fourth dielectric 25 is provided by flip-chip mounting, and an eighth center conductor 23 is provided on the side of the fourth dielectric 25 facing the eighth center conductor 23. A sixth grounding conductor 24 is provided at regular intervals so as to intersect with the third conductor, and this is used as a coupling portion between the microstrip line and the slot line.

Eighth center conductor 23 and sixth ground conductor 24
Can be adjusted by appropriately changing the height of the bump 7 or changing the intersection angle.

[0062]

As described above, according to the present invention, the degree of freedom of design is increased by independently configuring the two conductors of the coupling line, the coupling line and the overlay conductor, or the microstrip line and the slot line. This constitutes a high-frequency circuit having excellent performance such as easy adjustment of the degree and low loss.

[Brief description of the drawings]

FIG. 1 is a side sectional view of a high-frequency circuit according to a first embodiment of the present invention.

FIG. 2 is a side sectional view of a high-frequency circuit according to a second embodiment of the present invention.

FIG. 3 is a side sectional view of a high-frequency circuit according to a third embodiment of the present invention.

FIG. 4 is a side sectional view of a high-frequency circuit according to a fourth embodiment of the present invention.

FIG. 5 is a side sectional view of a high-frequency circuit according to a fifth embodiment of the present invention.

FIG. 6 is a side sectional view of a high-frequency circuit according to a sixth embodiment of the present invention.

FIG. 7 is a side sectional view of a high-frequency circuit according to a seventh embodiment of the present invention.

FIG. 8 is a side sectional view of a high-frequency circuit according to an eighth embodiment of the present invention.

FIG. 9 is a side sectional view of a high-frequency circuit according to a ninth embodiment of the present invention.

FIG. 10 is a side sectional view of a conventional transmission line.

FIG. 11 is a side sectional view of a conventional transmission line.

FIG. 12 is a side sectional view of a conventional transmission line.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st ground conductor 2 1st dielectric 3 1st center conductor 4 Bump 5 1st dielectric film 6 2nd center conductor 7 2nd dielectric film 8 Dielectric material 9 Semiconductor integrated circuit 21st 3 ground conductor 22 2nd dielectric 23 3rd center conductor 24 4th center conductor 25 3rd dielectric film 28 metal film 29 through hole 31 4th ground conductor 32 4th dielectric film 33 center Conductor 34 central conductor 35 third dielectric 36 gallium arsenide substrate 101 conductor 102 dielectric substrate 103 central conductor

Continuation of the front page (56) References JP-A-1-195701 (JP, A) JP-A-5-37213 (JP, A) JP-A-58-75302 (JP, A) JP-A-2-121502 (JP) JP-A-7-46009 (JP, A) JP-A-3-295302 (JP, A) JP-A-49-136141 (JP, U) JP-A-61-57605 (JP, U) (58) Field surveyed (Int.Cl. ⁷ , DB name) H01P 5/18 H01P 5/02 603 H01P 5/10

Claims (12)

(57) [Claims] 1. A first ground conductor provided on a lower surface of a first dielectric, a first center conductor provided on the first dielectric, and a fixed distance from the first center conductor. A conductor provided upward by flip-chip mounting, a first dielectric film laminated on the side facing the first dielectric, using the conductor as a second ground conductor, A high frequency circuit comprising: a second central conductor provided on the body film above the first central conductor. 2. A first ground conductor provided on a lower surface of a first dielectric, a first center conductor provided on the first dielectric, and a fixed distance from the first center conductor. A dielectric provided above by flip-chip mounting; and a second dielectric provided above the first central conductor on a side facing the first dielectric, with the dielectric being a second dielectric. A high-frequency circuit comprising two center conductors. 3. The high-frequency circuit according to claim 1, wherein a line width of the first center conductor and a line width of the second center conductor are changed. 4. The high-frequency circuit according to claim 1, wherein a second center conductor is provided obliquely above the first center conductor. 5. A first ground conductor provided on a lower surface of a first dielectric, third and fourth central conductors provided in parallel on the first dielectric at a predetermined interval, and the third and provided 4 constant distance above the center conductor of the implementation of a flip-chip method, a high-frequency circuit comprising a conductor of the first overlay conductor. 6. A first ground conductor provided on a lower surface of a first dielectric, third and fourth center conductors provided in parallel on the first dielectric at a predetermined interval, and A dielectric provided by a flip-chip method above the third and fourth center conductors by a fixed distance, and the third and fourth dielectrics on the third dielectric, wherein the dielectric is a third dielectric. 4th
Provided on the side facing the upper center conductor, a high-frequency circuit comprising a conductor of a second overlay conductor. 7. A conductor provided on a first dielectric, a conductor provided as a third overlay conductor, and provided by a flip-chip mounting above the third overlay conductor by a fixed distance, A second dielectric film laminated on a side of the third ground conductor facing the first dielectric; a third ground conductor on the second dielectric film; overlay the conductor upwards, high-frequency circuit having a fifth and sixth central conductor of which is provided in parallel at regular intervals. 8. A slot line structure in which conductors are provided on the first dielectric at regular intervals and the conductor is a fourth ground conductor, and a flip-chip method is provided above the fourth ground conductor by a constant distance. A third dielectric film laminated on the side facing the fourth ground conductor, using the conductor as a fifth ground conductor, and the third dielectric film on the third dielectric film. A high-frequency circuit comprising: a seventh center conductor provided on a side facing the fourth ground conductor. 9. A first ground conductor provided on the lower surface of the first dielectric, an eighth center conductor provided on the first dielectric, and a fixed distance from the eighth center conductor. A sixth dielectric having a dielectric provided upward by flip-chip mounting, and a slot provided at a predetermined interval on a side facing the eighth central conductor, using the dielectric as a fourth dielectric;
High-frequency circuit comprising: a ground conductor; 10. The high-frequency circuit according to claim 1, wherein a silicon substrate having a high impurity implantation amount is used as the first ground conductor. 11. The method according to claim 1, wherein a silicon nitride film or a silicon oxide film is used as the dielectric film.
9. The high-frequency circuit according to claim 3, 4, 7, or 8.
Road . 12. The method according to claim 1, wherein gallium arsenide is used as the dielectric.
A high-frequency circuit according to claim 8 or claim 9.