JP3069129B2 - 半導体素子における抵抗の測定方法および装置 - Google Patents

半導体素子における抵抗の測定方法および装置

Info

Publication number
JP3069129B2
JP3069129B2 JP3511847A JP51184791A JP3069129B2 JP 3069129 B2 JP3069129 B2 JP 3069129B2 JP 3511847 A JP3511847 A JP 3511847A JP 51184791 A JP51184791 A JP 51184791A JP 3069129 B2 JP3069129 B2 JP 3069129B2
Authority
JP
Japan
Prior art keywords
semiconductor element
conductor
conductors
semiconductor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3511847A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05502947A (ja
Inventor
ファンデルホルスト，ウィルフリート
メリオス，マルク
Original Assignee
アンテルユニヴェルシテール・ミクロ・エレクトロニカ・サントリュム・ヴェー・ゼット・ドゥブルヴェ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL9002749A external-priority patent/NL9002749A/nl
Application filed by アンテルユニヴェルシテール・ミクロ・エレクトロニカ・サントリュム・ヴェー・ゼット・ドゥブルヴェ filed Critical アンテルユニヴェルシテール・ミクロ・エレクトロニカ・サントリュム・ヴェー・ゼット・ドゥブルヴェ
Publication of JPH05502947A publication Critical patent/JPH05502947A/ja
Application granted granted Critical
Publication of JP3069129B2 publication Critical patent/JP3069129B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
    • G01R27/205—Measuring contact resistance of connections, e.g. of earth connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP3511847A 1990-07-09 1991-07-09 半導体素子における抵抗の測定方法および装置 Expired - Lifetime JP3069129B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP90201853 1990-07-09
EP90201853.0 1990-07-09
NL9002749A NL9002749A (nl) 1990-07-09 1990-12-13 Werkwijze en inrichting voor weerstandsmetingen aan een halfgeleiderelement.
NL9002749 1990-12-13
NL90201853.0 1990-12-13

Publications (2)

Publication Number Publication Date
JPH05502947A JPH05502947A (ja) 1993-05-20
JP3069129B2 true JP3069129B2 (ja) 2000-07-24

Family

ID=26125945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3511847A Expired - Lifetime JP3069129B2 (ja) 1990-07-09 1991-07-09 半導体素子における抵抗の測定方法および装置

Country Status (5)

Country Link
JP (1) JP3069129B2 (fr)
AT (1) ATE144328T1 (fr)
DE (1) DE69122681T2 (fr)
ES (1) ES2093070T3 (fr)
WO (1) WO1992001233A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2916856B1 (fr) * 2007-06-01 2009-12-04 Commissariat Energie Atomique Dispositif de mesure de resistivite de contact metal/semi-conducteur.

Also Published As

Publication number Publication date
ATE144328T1 (de) 1996-11-15
DE69122681D1 (de) 1996-11-21
DE69122681T2 (de) 1997-03-06
JPH05502947A (ja) 1993-05-20
WO1992001233A1 (fr) 1992-01-23
ES2093070T3 (es) 1996-12-16

Similar Documents

Publication Publication Date Title
US5214389A (en) Multi-dimensional high-resolution probe for semiconductor measurements including piezoelectric transducer arrangement for controlling probe position
US5338932A (en) Method and apparatus for measuring the topography of a semiconductor device
US5585734A (en) Method for determining the resistance and carrier profile of a semiconductor element using a scanning proximity microscope
US5065103A (en) Scanning capacitance - voltage microscopy
De Wolf et al. One‐and two‐dimensional carrier profiling in semiconductors by nanospreading resistance profiling
Houzé et al. Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes
Vatel et al. Kelvin probe force microscopy for potential distribution measurement of semiconductor devices
US5856672A (en) Single-crystal silicon cantilever with integral in-plane tip for use in atomic force microscope system
US5723981A (en) Method for measuring the electrical potential in a semiconductor element
EP0584233B1 (fr) Arrangement des pointes avec des pointes opposées
US6201401B1 (en) Method for measuring the electrical potential in a semiconductor element
US5729026A (en) Atomic force microscope system with angled cantilever having integral in-plane tip
JPH04184201A (ja) バリアハイト測定装置
Olbrich et al. High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy
JP2005303321A (ja) 非侵入プローブで半導体ウエハを検査する方法
JP3069129B2 (ja) 半導体素子における抵抗の測定方法および装置
EP0466274B1 (fr) Procédé et appareil pour mesurer la résistance sur des éléments semi-conducteurs
US20050127926A1 (en) Method using conductive atomic force microscopy to measure contact leakage current
US5369372A (en) Method for resistance measurements on a semiconductor element with controlled probe pressure
Nevosad et al. C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices
JP2900764B2 (ja) 半導体表面薄膜の評価方法
US6208151B1 (en) Method and apparatus for measurement of microscopic electrical characteristics
Tran et al. Quantitative two-dimensional carrier profiling of a 400 nm complementary metal–oxide–semiconductor device by Schottky scanning capacitance microscopy
US10495666B2 (en) Device and method for two dimensional active carrier profiling of semiconductor components
EP0485202B1 (fr) Utilisation d'une système du type STM pour mesurer le tension de noeux dans des circuits intégrés

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090519

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100519

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110519

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120519

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120519

Year of fee payment: 12