WO1992001233A1 - Methode et appareil permettant de mesurer la resistance sur un element a semiconducteur - Google Patents

Methode et appareil permettant de mesurer la resistance sur un element a semiconducteur Download PDF

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Publication number
WO1992001233A1
WO1992001233A1 PCT/EP1991/001294 EP9101294W WO9201233A1 WO 1992001233 A1 WO1992001233 A1 WO 1992001233A1 EP 9101294 W EP9101294 W EP 9101294W WO 9201233 A1 WO9201233 A1 WO 9201233A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor element
conductors
conductor
resistance
voltage
Prior art date
Application number
PCT/EP1991/001294
Other languages
English (en)
Inventor
Wilfried Vandervorst
Marc Meuris
Original Assignee
Interuniversitair Micro Elektronica Centrum Vzw
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL9002749A external-priority patent/NL9002749A/nl
Application filed by Interuniversitair Micro Elektronica Centrum Vzw filed Critical Interuniversitair Micro Elektronica Centrum Vzw
Priority to US07/838,419 priority Critical patent/US5369372A/en
Publication of WO1992001233A1 publication Critical patent/WO1992001233A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
    • G01R27/205—Measuring contact resistance of connections, e.g. of earth connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials

Definitions

  • SRP Spreading Resistance Probe
  • a semi ⁇ conductor element is herein cut obliquely and the resistance between in each case two probe points placed on the surface is measured. These probe points or conductors are placed at an interval of approximately 15 to 50 ⁇ m. The angle of inclination is in the region of several minutes to several degrees. The conductors are stepped over the obliquely cut portions with a step size in each case of 2.5 to 5 ⁇ m.
  • the resistance measurement can take place with both direct voltage and alternating voltage.
  • a problem here is the deviation in the contact resis ⁇ tance between conductor and semiconductor element.
  • the point of the conductor is accurately polished, which can sometimes take days, until the contact resistance on a calibration sample reaches a predetermined value. Even after the time- consuming calibration of the points of the conductors the deviation in the contact resistance results in inaccuracies in the measurements.
  • the present invention has for its object to provide a new method wherein the accuracy of resistance measurements on a semiconductor element is considerably improved.
  • Fig. 1 shows a graph of a current-voltage characteristic measured on a first semiconductor element and according to a first preferred method according to the present invention
  • Fig. 2 shows a graph of a current-voltage characteristic measured on a second semiconductor element and according to a second preferred method according to the present invention.
  • Fig. 1 and 2 are measured using an AFM arrangement (Atomic Force Microscopy) .
  • a semiconductor element is movable three-dimensionally with piezo-crystals, a first of which adjusts the pressure or distance of a conducting needle relative to the semiconductor element, while two others enable a movement over the surface of the semiconductor element.
  • a laser beam is directed onto the contact point of the conductor and the semiconductor element. The reflection of the laser beam is picked up in a photodiode, wherein the output of the photodiode is fed back to the first mentioned piezo-crystal.
  • Fig. 2 shows measurements on a substrate with a comparatively smaller resistivity « 0.0084 ⁇ .cm. Different measurements are indicated with different curves in fig. 2 and show an approximately linear relation (1 3 and 1 4 ) , wherein the angles of slope of the lines (1 3 and 1 4 ) are dependent on the applied pressure between conductor and semiconductor element.
  • this conductor penetrates through a thin oxide layer which in practice is almost always present on the semiconductor element.
  • the pressure force can be held very constant because of feedback to the first mentioned piezo-crystal.
  • the conductors are moved over the surface for measuring the resistance or conductivity along the sloping surface, wherewith the resistance at different depths in the semiconductor element becomes known.
  • Another technique which makes use in accurate manner of the control of a conductor over a for instance semicon ⁇ ducting element is so-called Scanning Tunneling Microscopy, wherein use is made of the tunnel flow between conductor and that element for holding the conductor at constant distance relative to the surface of that element.
  • the oxide layer over the semiconductor element can form a problem here.
  • An important novel feature of the method according to the present invention relates to the possibility of measuring either with DC current and/or voltage, or AC voltage or current.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

Méthode permettant de mesurer la résistance ou la conductivité entre deux ou plusieurs conducteurs placés sur un élément à semiconducteur, dans laquelle, afin de porter à une valeur prédéterminée la résistance de contact entre les conducteurs et l'élément et de la maintenir à cette valeur durant la mesure, les conducteurs sont maintenus à une distance constante et/ou avec une pression constante par rapport à l'élément à semiconducteur.
PCT/EP1991/001294 1990-07-09 1991-07-09 Methode et appareil permettant de mesurer la resistance sur un element a semiconducteur WO1992001233A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07/838,419 US5369372A (en) 1990-12-13 1991-07-09 Method for resistance measurements on a semiconductor element with controlled probe pressure

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP90201853 1990-07-09
EP90201853.0 1990-07-09
NL9002749A NL9002749A (nl) 1990-07-09 1990-12-13 Werkwijze en inrichting voor weerstandsmetingen aan een halfgeleiderelement.
NL9002749 1990-12-13

Publications (1)

Publication Number Publication Date
WO1992001233A1 true WO1992001233A1 (fr) 1992-01-23

Family

ID=26125945

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1991/001294 WO1992001233A1 (fr) 1990-07-09 1991-07-09 Methode et appareil permettant de mesurer la resistance sur un element a semiconducteur

Country Status (5)

Country Link
JP (1) JP3069129B2 (fr)
AT (1) ATE144328T1 (fr)
DE (1) DE69122681T2 (fr)
ES (1) ES2093070T3 (fr)
WO (1) WO1992001233A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2916856B1 (fr) * 2007-06-01 2009-12-04 Commissariat Energie Atomique Dispositif de mesure de resistivite de contact metal/semi-conducteur.

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Elektrie, vol. 25, no. 8, August 1971, B. Novotny: "Verfahren Zur Ermittlung von Kontaktwiderst{nden", pages 303-304 *
IBM Technical Disclosure Bulletin, vol. 26, no. 7B, December 1983, (New York, US), W.R. Smith: "Closed-Loop control of the "Z" Stage of a Wafer Prober", pages 3579-3580, see page 3580 *
International Text Conference, 1989, Proceedings, Washington, DC, IEEE, (New York, US), N. Nadeau et al.:"An Analysis of Tungsten Probes' effect on Yield in a Production Wafer Probe Environment", pages 208-215 *
Radio Fernsehen Elektronik, vol. 34, no. 7, July 1985, (Oost-Berlin, DD), F. Bage: "Elektrisches Kontaktverhalten von Sondennadeln", pages 415-417 *

Also Published As

Publication number Publication date
JP3069129B2 (ja) 2000-07-24
ATE144328T1 (de) 1996-11-15
DE69122681D1 (de) 1996-11-21
DE69122681T2 (de) 1997-03-06
JPH05502947A (ja) 1993-05-20
ES2093070T3 (es) 1996-12-16

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