JP3058151B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a structure of a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a structure of a semiconductor device, a structure shown in Japanese Patent Application No. 01-015511 and shown in FIG. 2 has been known. FIG. 2 is a view of the structure of a conventional semiconductor device as viewed from the substrate side. Reference numeral 1 denotes a substrate having at least an insulated surface. The pattern is formed so as to face the metal protrusion 4 formed on the electrode of the semiconductor element 5. Reference numeral 8 denotes an insulating resin, and the semiconductor element 5 and the substrate 1 are adhered to each other by the insulating resin while maintaining the electrical connection between the wiring pattern and the metal protrusion. In general, the electrode pitch of a semiconductor element is 50 to 200 μm, and when connecting to an external device, the pitch is further expanded to 2 in FIG.
In many cases, a wiring pattern as shown in FIG. 6 indicates an end face of the substrate, and 7 indicates a distance between the end face of the substrate and the semiconductor element. FIG. 3 shows an example in which the structure of a conventional semiconductor device is applied to a liquid crystal panel. 11 is a substrate glass, and liquid crystal is sealed between the substrate glass and 16. The driving semiconductor element 15 is mounted on the substrate glass 11 according to the method described with reference to FIG. 12 is an input wiring pattern for transmitting an input signal to the driving semiconductor element,
The 17 flexible connectors were connected by anisotropic conductive films, soldering, etc., and were connected to external circuits. The output from the driving semiconductor element 15 was guided to the liquid crystal enclosure through the output wiring pattern 13, and a signal for driving the liquid crystal was applied to the liquid crystal.

[0003]

However, in the structure of the conventional semiconductor device, as shown in FIG. 3, the output wiring pattern of the semiconductor element, that is, the wiring pattern inside the device and the semiconductor element are sandwiched between the semiconductor element and the end face of the substrate. Since the structure has an input wiring pattern, that is, a wiring pattern to the outside of the device, there is a problem that the distance 7 between the substrate end face and the semiconductor element is necessarily long. In general, the substrate should be as large as possible, such as a liquid crystal display part for a liquid crystal display device, and a photodiode and a drive circuit for an image sensor, and the mounting parts and the like should be as small as possible. In order to increase the efficiency of removing the device from the substrate, a design is made to eliminate as much as possible a space such as the distance 7 between the substrate end face and the semiconductor element. Therefore, the conventional semiconductor device has a problem that the efficiency of removing the device from the substrate is low.

Therefore, in order to solve the above-mentioned problems, the present invention reduces the distance 7 between the end face of the substrate and the semiconductor element as much as possible, and increases the efficiency of removing the device from the substrate as much as possible. It is intended to provide.

[0005]

According to the present invention, there is provided a semiconductor device comprising:
A plurality of semiconductor elements are formed on a substrate, and an input wiring pattern electrically connected to an electrode formed on each of the semiconductor elements; and an input wiring pattern electrically formed on each of the semiconductor elements. In a semiconductor device in which a connected output wiring pattern is formed on the substrate, the input wiring pattern has a pitch conversion section whose line width gradually increases, and the pitch conversion section is provided between the semiconductor elements. The input wiring pattern connected to the first semiconductor element is provided in a region between a first semiconductor element and a second semiconductor element among the plurality of semiconductor elements. And the output wiring pattern connected to the second semiconductor element is formed adjacently. Further, the pitch of the output wiring pattern is narrower than the pitch of the input wiring pattern.

[0006]

According to the present invention, the wiring pattern extending from the face-down mounted semiconductor element to the outside is drawn out from the side of the semiconductor element, so that the electrode pitch of the semiconductor element can be easily obtained. Since the portion where the pitch of the wiring pattern is enlarged can be used not between the semiconductor element and the edge of the substrate but on the side of the semiconductor element, the distance between the semiconductor element and the edge of the substrate is shortened. .

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments. FIG. 1 is a view of a structure of a semiconductor device according to the present invention as viewed from a substrate side. Reference numeral 1 denotes a substrate, which is often made of metal, glass, ceramic, or the like, at least having an insulated surface. FIG. 1 illustrates an example using a transparent substrate such as glass. On the substrate, a wiring pattern 2 for connecting the semiconductor element 5 to the outside of the substrate and a wiring pattern 3 for connecting the circuit formed on the substrate to the outside of the device are formed. I have. These wiring patterns are usually formed by photo-patterning a metal such as Cr, Ni, or Ta, or a metal oxide such as ITO, or by printing a conductive ink in many cases. The pitch of the wiring pattern 3 inside the device is similar to or less than the pitch of the metal protrusions 4 formed on the semiconductor element 5 because of the circuit pitch formed on the substrate 1. There is no problem because it can be pulled straight, but connection to the outside of the device is usually difficult to connect unless it is wider than the pitch of the metal protrusions 4, and low impedance is required for the power supply etc. supplied to the semiconductor element Therefore, the wiring pattern 2 to the outside of the device is often designed as wide as possible.
Wiring pattern 4 of the device outside is drawn into the side surface direction of the semiconductor element 5, by doing so, we're doing broadening of expansion and low impedance or pattern pitch of the wiring pattern. Naturally, the external connection metal projection of the semiconductor element 5 is also formed in a position facing the wiring pattern 2 to the outside of the device.

Usually, the side of the semiconductor element is often a wasteful space in which nothing is formed, and a connection place with the outside of the device is formed here. By doing so, the distance 7 between the substrate end face 6 and the semiconductor element 5 is smaller than the distance between the substrate end face and the semiconductor element as compared with the method of providing a connection place with the outside of the device on the substrate end face 6 side of the semiconductor element 5. 7 can be made sufficiently short. In FIG. 1, four wiring patterns with the outside of the device are shown, but the number differs depending on the semiconductor element and the semiconductor device, and the pattern is drawn out centering on the lateral direction of the semiconductor element as shown in the figure. For example, the square and a part thereof may exist in a region connecting the semiconductor element and the end face of the substrate. The point is, how
The design should be made in consideration of whether a wasteful space on the side surface of the semiconductor element is used for routing the connection pattern with the outside of the device. As described above, by reducing the distance between the semiconductor element and the end face of the substrate, the dimensions of the substrate can be reduced, and the efficiency of removing the substrate from the original plate can be improved, so that the cost of the substrate can be reduced. This has a remarkable effect in an active matrix liquid crystal panel substrate, an image sensor substrate, or the like, which has a high cost per substrate area. Further, a portion irrelevant to the substrate performance can be reduced, and the commercial value of a product using the substrate can be increased. In a liquid crystal panel or the like, it corresponds to a part called a picture frame, which can be made smaller, thereby increasing its commercial value. The semiconductor element 5 is bonded to the substrate 1 by the insulating resin 8. To further illustrate this state, FIG. 4 is a cross-sectional view taken along the line AA ′ of FIG. In FIG. 4, reference numeral 5 denotes a semiconductor element, on which a metal such as Cr—Cu or Ti—Pd is deposited on an electrode 9 and then a metal projection 4 is formed. The metal projection 4 is made of Au,
It is a metal such as Cu or solder, and is often formed by electroplating, sputtering, or the like. The electrode 9 is a connection part for taking out a power supply, an input signal, or an output signal supplied to the semiconductor element to outside the semiconductor element. The metal projection 4 is pressed against the wiring pattern 2 with the outside of the device and the wiring pattern 3 inside the device on the substrate 1 by the adhesive force of the insulating resin 8. Here, an example of flip-chip mounting of a semiconductor element using an adhesive has been described, but a conventional eutectic connection method using solder bumps or a method of forming a substitute material for metal projections by printing or the like may be used.

FIG. 5 shows an example in which the structure of the semiconductor device of the present invention is applied to a liquid crystal panel. Reference numeral 11 denotes a substrate glass, which is equivalent to the above-described substrate, and has liquid crystal sealed between the glass and the opposite glass 16. A panel driving semiconductor element 15 is mounted on the substrate glass 11 according to the method described with reference to FIG. Reference numeral 12 denotes an input wiring pattern for transmitting an input signal to the driving semiconductor element, and reference numeral 13 denotes an output wiring pattern for outputting an output from the driving semiconductor element to a panel. 2 and the wiring pattern 3 inside the device. As shown in the figure, the connection pitch of the input wiring pattern is increased by an empty space between the driving semiconductor elements, and the input wiring pattern is mounted and connected to 17 flexible connectors and an anisotropic conductive film. For this, known mounting means such as soldering and wire bonding may be used without using any flexible connector.

[0011]

As described above, in the structure of the semiconductor device according to the present invention, a large number of wiring patterns from the side of the semiconductor element end face to the outside of the device are mounted on the substrate on which the semiconductor element is mounted face down. Is brought out, and the connection with the outside of the apparatus is taken. Therefore, the following effects are obtained.

(1) Since the distance between the semiconductor element and the end face of the substrate can be reduced, the dimensions of the substrate can be reduced, and the efficiency of removing the substrate from the original plate can be improved, so that the cost of the substrate can be reduced.

(2) In particular, since the pitch converter of the external wiring pattern is arranged between adjacent semiconductor elements, the length of the pitch converter is absorbed, and the substantial linear distance between the semiconductor element and the end face of the substrate is obtained. Is shortened, which can greatly contribute to miniaturization.

(3) As the size of the substrate becomes smaller, a portion not related to the performance of the substrate becomes smaller, so that the commercial value of a product using the substrate can be increased.

(4) Since the substrate size is reduced, the weight of the product can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view of the structure of a semiconductor device according to the present invention as viewed from the back surface of a substrate.

FIG. 2 is a plan view of the structure of a conventional semiconductor device as viewed from the back surface of a substrate.

FIG. 3 is a perspective view showing a structure of a conventional semiconductor device.

FIG. 4 is a sectional view showing a structure of a semiconductor device according to the present invention.

FIG. 5 is a perspective view showing a structure of a semiconductor device according to the present invention.

[Explanation of symbols]

 1 …………………………………………………………………………………………………………………………………………………………………………………………………………………………………… Board edge 7 Distance of semiconductor element 8 Insulating resin 9 Electrode 11 Substrate glass 12 Input wiring pattern 13 Output wiring pattern 15 Driving semiconductor element 16 Opposing glass 17 ……… Flexible connector

Claims (2)

(57) [Claims] A plurality of semiconductor elements formed on a substrate; an input wiring pattern electrically connected to electrodes formed on each of the semiconductor elements; and an input wiring pattern formed on each of the semiconductor elements. In a semiconductor device in which an output wiring pattern electrically connected to an electrode is formed on the substrate, the input wiring pattern has a pitch conversion portion in which a line width is gradually increased. The pitch converter is formed so as to be disposed in a region between the first semiconductor element and the second semiconductor element of the plurality of semiconductor elements, and is connected to the first semiconductor element. Wherein the input wiring pattern and the output wiring pattern connected to the second semiconductor element are formed adjacent to each other. 2. The semiconductor device according to claim 1, wherein a pitch of said output wiring pattern is smaller than a pitch of said input wiring pattern.