JP2007141969A - Tape wiring substrate, its manufacturing method, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape wiring substrate in which the disconnection of an inner lead is suppressed by reducing a stress concentration to the inner lead when joining an electrode pad of a semiconductor chip with a bump electrode, its manufacturing method, and a semiconductor device. <P>SOLUTION: The tape wiring substrate is provided with a flexible insulating base material 1, a plurality sets of conductor wiring provided on the insulating base material and forming each inner lead 2 by each end alignedly arranged in a region 4 to which the semiconductor chip is mounted, and the bump electrode 3 provided to each inner lead. The substrate is composed so that the semiconductor chip can be mounted by face-down bonding by joining each electrode pad of the semiconductor chip with each bump electrode. Each length of the bump electrodes 3a-3c formed in each of a plurality of the inner leads arranged at a row end in each aligned inner lead is gradually elongated corresponding to a position of the inner lead from the inside inner lead to the inner lead at the endmost row. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wiring board configured by providing conductor wiring on a flexible insulating base material such as a tape wiring board, a manufacturing method thereof, and a semiconductor device using the wiring board.

  COF (Chip On Film) is known as a type of package module using a tape wiring board. The COF has a structure in which a semiconductor chip is mounted on a flexible insulating tape wiring substrate and the mounting portion is protected by sealing with a resin. The tape wiring board includes, as main elements, an insulating film base material and a large number of conductor wirings formed on the surface thereof. Generally, polyimide is used as the film substrate, and copper is used as the conductor wiring. If necessary, a metal plating film and a solder resist layer which is an insulating resin are formed on the conductor wiring.

  The main use of the COF is mounting a driver for driving a display panel such as a liquid crystal panel. In that case, the conductor wiring on the tape wiring board is divided into a first group that forms the output signal external terminals and a second group that forms the input signal external terminals. The element is mounted. Inner leads which are connection ends with the semiconductor chip in the conductor wiring on the tape wiring substrate are connected to the electrode pads on the semiconductor element through the protruding electrodes. An outer lead bonding portion that forms an output signal external terminal in one group of conductor wirings is connected to an electrode formed on a peripheral portion of the display panel, and forms an input signal external terminal in the other group of conductor wirings. The outer lead bonding part is connected to a terminal of the mother board.

  An example of the tape wiring board as described above is described in Patent Document 1. The tape wiring board described in Patent Document 1 will be described with reference to FIGS. FIG. 8 is a plan view showing a main region including a semiconductor chip mounting portion in the tape wiring substrate. FIG. 9 is a cross-sectional view taken along the line CC in FIG. However, the semiconductor chip is shown only in FIG.

  Reference numeral 1 denotes a part of a flexible and insulating tape substrate. On the tape substrate 1, a plurality of inner leads 2 formed by the leading ends of the conductor wirings are arranged in an aligned manner. A protruding electrode 3 is formed at the end of each inner lead 2. Reference numeral 4 denotes a semiconductor chip mounting portion, which is set in alignment with the arrangement of the protruding electrodes 3. As shown in FIG. 9, chip-side protruding electrodes 11 are formed on the electrode pads 10 of the semiconductor chip 5. 12 is a passivation and 13 is a sealing resin.

According to this tape wiring substrate, by using a structure in which the chip-side protruding electrode 11 formed on the electrode pad 10 of the semiconductor chip 5 and the protruding electrode 3 formed on the distal end portion of the inner lead 2 are used, connection reliability is achieved. Can be improved.
JP 2003-243455 A

  In the tape wiring substrate having the above-described configuration, when the semiconductor chip 5 is mounted on the tape wiring substrate, heat-pressing or ultrasonic vibration is applied to bond the chip-side protruding electrode 11 and the protruding electrode 3 together. However, the stress applied at the time of mounting is concentrated on the interface between the inner lead 2 and the protruding electrode 3 immediately below the joint, and the inner lead 2 is likely to break. In particular, in the electrode pad 10 located at the end of the semiconductor chip 4 or the electrode pad 9 portion having a sparse pitch, such a disconnection of the inner lead 2 tends to occur.

  Accordingly, an object of the present invention is to reduce the stress concentration on the inner lead when the electrode pad of the semiconductor chip and the protruding electrode are joined, and to suppress the disconnection of the inner lead.

  The tape wiring board of the present invention forms an inner lead by a flexible insulating base material and an end provided on the insulating base material and arranged in alignment with a region where a semiconductor chip is mounted. A plurality of conductor wirings and a protruding electrode provided on each inner lead, and the semiconductor chip is mounted by face-down bonding by bonding the electrode pad of the semiconductor chip and the protruding electrode Is done.

  In order to achieve the above object, a tape wiring board having a first configuration according to the present invention is characterized in that, among the aligned inner leads, the protrusions formed on a plurality of inner leads arranged at the end of a row. The electrode is characterized in that it gradually becomes longer from the inner inner lead to the innermost lead in the outermost row.

  The tape wiring board of the second configuration of the present invention has a sparse pitch portion in which the inner leads are arranged at a sparse pitch larger than a predetermined ratio with respect to the minimum pitch between the inner leads, and the sparse pitch portion has the sparse pitch portion. The length of the protruding electrode formed on the inner lead is longer than the length of the protruding electrode formed on the inner lead arranged at the minimum pitch.

  In the method for manufacturing a tape wiring board according to the present invention, a plurality of conductor wirings are provided on a flexible insulating base material, and the inner leads are formed by arranging and arranging the end portions in the region where the semiconductor chip is mounted. A step of forming a photoresist on the surface of the insulating substrate on which the conductor wiring is provided; and forming an opening in the photoresist to expose a part of the inner lead in the opening And a step of performing metal plating on a part of the exposed inner lead to form a protruding electrode, and a step of removing the photoresist.

  In order to achieve the above object, the method for manufacturing a tape wiring board according to the first configuration of the present invention corresponds to a plurality of the inner leads arranged at the end of a row among the arranged inner leads. The opening of the photoresist is formed so as to gradually become longer from the inner inner lead to the innermost lead in the outermost row.

  In the method for manufacturing a tape wiring board according to the second configuration of the present invention, a part of the inner leads is arranged at a large pitch larger than a predetermined ratio with respect to the minimum pitch between the inner leads, and arranged at the large pitch. The length of the opening of the photoresist corresponding to the inner lead is longer than the length of the opening corresponding to the inner lead arranged at the minimum pitch.

  The semiconductor device according to the present invention includes a plurality of flexible insulating base materials and inner leads formed by the end portions arranged on the insulating base material and aligned with the region where the semiconductor chip is mounted. A conductive wire, a protruding electrode provided on each inner lead, and the semiconductor chip mounted in a region where the protruding electrode is disposed, and the electrode pad of the semiconductor chip and the protruding electrode are bonded to each other. ing.

  In order to achieve the above object, in the semiconductor device according to the first configuration of the present invention, the protruding electrode extends beyond the electrode pad on the side facing at least the outer side of the corresponding electrode pad in the longitudinal direction. It is characterized by that.

  In the semiconductor device of the second configuration of the present invention, the length in the longitudinal direction of the plurality of protruding electrodes corresponding to the plurality of electrode pads arranged at the end of the semiconductor chip is the length in the longitudinal direction of the electrode pad. It is longer than the length, and is gradually longer from the inner inner lead to the innermost lead in the end row.

  A semiconductor device having a third configuration according to the present invention includes a sparse pitch portion in which the inner leads are arranged at a sparse pitch larger than a predetermined ratio with respect to a minimum pitch between the inner leads, and the inner portion of the sparse pitch portion. The protruding electrode formed on the lead has a length in the longitudinal direction longer than a length in the longitudinal direction of the corresponding electrode pad, and extends beyond the electrode pad at least outside the corresponding electrode pad. It is characterized by that.

  According to the tape wiring substrate of the present invention, the size of the protruding electrode on the inner lead is made larger than that of the electrode pad of the semiconductor chip, so that the edge of the protruding electrode on the inner lead can be removed from the position of the junction with the electrode pad. It becomes possible to shift, stress concentration at the time of joining can be reduced, and disconnection of the inner lead can be suppressed.

  In the tape wiring substrate of the first configuration of the present invention, the length of the protruding electrode formed on at least three inner leads from the aligned endmost row of the inner leads is longer than the innermost inner leads. A configuration may be adopted in which the length gradually becomes longer as the inner leads of the row become.

  In the tape wiring board of the second configuration of the present invention, the inner leads of the sparse pitch portion may be arranged at a pitch of 1.5 times or more the minimum pitch.

  In the tape wiring substrate having any one of the above configurations, the length of the longest protruding electrode is preferably at least twice the length of the shortest protruding electrode.

  In the semiconductor device according to the first configuration of the present invention, the protruding electrode corresponding to the electrode pad arranged at the four corners of the semiconductor chip has the electrode pad on the side facing at least the outer side of the electrode pad in the longitudinal direction. It can be set as the structure extended beyond.

  In the semiconductor device of the second configuration of the present invention, the length of the protruding electrode formed on at least three inner leads from the endmost row of the aligned inner leads is longer than the length of the electrode pad, The inner lead can be configured to be gradually longer from the inner lead to the innermost lead in the end row.

  In the semiconductor device of the third configuration of the present invention, the inner leads of the sparse pitch portion are arranged at a pitch of 1.5 times or more of the minimum pitch, and the length of the protruding electrode is the protrusion of the minimum pitch portion. It can be set as the structure currently formed longer than the length of an electrode.

  In the semiconductor device having any one of the above structures, it is preferable that the conductor portion of the electrode pad of the semiconductor chip has a protrusion.

  In addition, the conductor portion forming the protrusion of the electrode pad is made of a single layer body, a multilayer body or an alloy body made of a material mainly composed of nickel, copper, aluminum, gold, silver, palladium, or tin. Preferably it is formed.

  Further, at the junction between the electrode pad and the protruding electrode at the outermost end of the semiconductor chip, the protruding electrode extends at least 30 μm or more from the edge of the electrode pad along the longitudinal direction of the inner lead. It is preferable.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is a plan view showing the structure of the main part of the tape wiring board according to Embodiment 1, and is a plan view seen from the surface side of the tape wiring board.

  In FIG. 1, 1 shows the principal part of a flexible and insulating tape base material. A plurality of conductor wirings are provided on the tape substrate 1, and the end portions form the inner leads 2. Each inner lead 2 is provided with a protruding electrode 3. The inner leads 2 are arranged in alignment with the semiconductor chip mounting portion 4, and the protruding electrodes 3 are arranged to face electrode pads (not shown) of the semiconductor chip.

  The length of the protruding electrode 3 in the longitudinal direction of the inner lead 2 is different between the end row 6 arranged in a predetermined range of the end portion of the semiconductor chip mounting portion 4 and the row arranged in the center portion. That is, the protruding electrode 3 is formed short in the central portion of the semiconductor chip mounting portion 4. On the other hand, the protruding electrodes 3 a to 3 c formed on the three inner leads 2 in the end row 6 gradually become longer from the inner inner lead 2 to the innermost lead 2 in the end row. The number of the end rows 6, that is, the length of the protruding electrodes, is not limited to three, and is set as appropriate according to other conditions.

  FIG. 2 shows a method for manufacturing the tape wiring substrate of FIG. (A1)-(e1) is a top view, (a2)-(e2) is corresponding sectional drawing.

  First, as shown in FIGS. 2A1 and 2A2, the inner leads 2 are formed on the semiconductor chip mounting portion 4 on the tape base 1. In general, the inner lead 2 is often formed by etching a copper foil laminated on a tape substrate 1. As a material, copper is generally used, but other conductors can also be used.

  Next, as shown in (b1) and (b2), a photoresist layer 7 for forming protruding electrodes is formed on the tape substrate 1 on which the inner leads 2 have been formed.

  Next, as shown in (c1) and (c2), the resist layer 7 is subjected to patterning of the opening 8 for forming the protruding electrode at a desired position by photolithography, and a part of the wiring of the inner lead 2 is formed. Expose. The opening 8 is formed so that the size (length) in the length direction of the inner lead 2 of the protruding electrode 3 to be formed gradually increases as it approaches the four corners of the semiconductor chip mounting portion 4. That is, the length of the protruding electrode 3 extends beyond the electrode pad on at least the outer side of the electrode pad of the semiconductor chip, and the extending length gradually increases as the four corners of the semiconductor chip mounting portion 4 are approached. The opening 8 is patterned so as to become longer. The figure shows a case where the length of the endmost part is twice the shortest length. Further, a case is shown in which the length of the opening 8 corresponding to the inner lead 2 in the three rows from the four corners of the semiconductor chip mounting portion 4 is changed. These settings can be appropriately changed according to other conditions.

  Next, as shown in (d1) and (d2), a protruding electrode 3 made of a conductor is formed on the exposed portion of the opening 8 in the inner lead 2 by an electrolytic plating method or an electroless plating method. The material of the protruding electrode 3 is preferably formed of a single layer, a multilayer or an alloy made of a material mainly composed of copper, nickel, silver, gold, palladium, tin or the like.

  The method of forming the protruding electrode 3 on the inner lead 2 is not limited to the electrolytic plating method. For example, a photoresist layer is formed at a position where the protruding electrode 3 is desired to be formed, and the exposed inner lead 2 is half-etched to thereby form the protruding electrode 3. It is also possible to form

  Next, as shown in (e1) and (e2), by removing the photoresist layer 7, the size of the protruding electrode 3 gradually increases from the inner leads 2 inside the three rows from the four corners of the semiconductor chip mounting portion 4. The tape wiring board is completed.

  FIG. 3 shows a plan view of a semiconductor device in which a semiconductor chip is mounted on the tape wiring substrate on which the protruding electrodes are formed as described above, and FIG. 4 shows a cross section taken along line BB in FIG. In consideration of easy understanding of the figure, the semiconductor chip 5 in FIG. 3 is indicated by a broken line, but the electrode pad 10 is indicated by a solid line.

  As shown in FIG. 4, chip-side protruding electrodes 11 are formed on the electrode pads 10 formed on the surface of the semiconductor chip 5. The electrode pad 10 is generally made of a material mainly composed of aluminum, but a conductor such as copper can also be used. In the configuration of FIG. 4, it is preferable that the chip-side protruding electrode 11 is formed on the surface of the electrode pad 10, but a structure without the chip-side protruding electrode 11 is also possible. The chip side protruding electrode 11 is preferably formed of a single layer body, a multilayer body or an alloy body made of a material mainly composed of nickel, copper, aluminum, gold, silver, palladium, tin or the like. As a method for forming the chip-side protruding electrode 11, an electroless plating method or an electrolytic plating method can be used, but it can also be formed by a vapor deposition method, a sputtering method, or the like.

  The electrode pad 10 of the semiconductor chip 5 and the inner lead 2 of the tape wiring substrate are joined via the chip side protruding electrode 11 and the protruding electrode 3. As shown in FIG. 3, at the four corners of the semiconductor chip 5, the protruding electrodes 3 a to 3 c are longer than the protruding electrode 3 at the center. That is, the electrode pad 10 extends beyond the electrode pad 10 at least toward the outer side, and the extending length becomes longer toward the end of the semiconductor chip 5. At the junction between the electrode pad 10 at the end of the semiconductor chip 5 and the protruding electrode 3 c, the protruding electrode 3 c extends at least 30 μm outward from the edge of the electrode pad 10 along the longitudinal direction of the inner lead 2. It is desirable.

  As a method for bonding the semiconductor chip 5 and the tape wiring substrate, a pressure heating method, an ultrasonic bonding method, or the like can be used.

  Further, a sealing resin 13 is filled between the semiconductor chip 5 and the tape wiring substrate. This makes it possible to supplement the bonding strength.

With the above configuration, it is possible to prevent disconnection of the inner leads when the semiconductor chip is mounted on the tape wiring substrate with protruding electrodes.
(Embodiment 2)
FIG. 5 shows the structure of the semiconductor device according to the second embodiment, and is a plan view seen from the surface of the tape wiring board. In view of ease of understanding of the figure, the semiconductor chip 5 is indicated by a broken line. In FIG. 5, the same elements as those of the semiconductor device of FIG. 3 are denoted by the same reference numerals, and the description thereof will not be repeated.

  In the semiconductor device according to the present embodiment, the protruding electrode 3d extends beyond the edge of the electrode pad 10 along the longitudinal direction of the inner lead 2 at the junction between the electrode pad 10 and the protruding electrode 3d of the semiconductor chip 5. is doing. At the joint between the electrode pad 10 at the end of the semiconductor chip 5 and the protruding electrode 3d, the protruding electrode 3d extends at least 30 μm or more from the edge of the electrode pad 10 along the longitudinal direction of the inner lead 2. It is desirable.

As a method for bonding the semiconductor chip 3 and the tape wiring substrate, a pressure heating method, an ultrasonic bonding method, or the like can be used. As a method for manufacturing the tape substrate, the same method as in the embodiment can be used.
(Embodiment 3)
FIG. 6 is a plan view showing the structure of the tape wiring board according to the third embodiment, as viewed from the front surface side of the tape wiring board. FIG. 7 is a plan view of a semiconductor device in which a semiconductor chip is mounted on the tape wiring substrate of FIG. In view of ease of understanding of the figure, the semiconductor chip 5 is indicated by a broken line.

  The tape wiring substrate in the present embodiment has sparse pitch portions 9. In the sparse pitch portion 9, the inner leads 2 a are arranged at a pitch larger than the minimum pitch between the inner leads 2 by a predetermined ratio or more. The length of the protruding electrodes 3e formed on the inner leads 2a of the sparse pitch portion 9 is longer than the length of the protruding electrodes 3 formed on the inner leads 2 arranged at the minimum pitch.

  In the sparse pitch portion 9, when the semiconductor chip 5 is mounted on the tape wiring substrate, stress tends to concentrate at the joint between the electrode pad 10 of the semiconductor chip 5 and the protruding electrode, and disconnection of the inner lead 2a is likely to occur. Therefore, the length of the protruding electrode 3e of the sparse pitch portion 9 is extended beyond the edge of the electrode pad 10 along the longitudinal direction of the inner lead 2a by at least 30 μm toward the outer side. When the pitch is 1.5 times the minimum pitch or more, there is an effect of reducing the disconnection by forming the protruding electrode long.

  As a method for bonding the semiconductor chip 3 and the tape wiring substrate, a pressure heating method, an ultrasonic bonding method, or the like can be used. As a method for manufacturing the tape substrate, the same method as in the embodiment can be used.

  As in the above embodiments, in the tape wiring substrate and the semiconductor device, the size of the protruding electrode on the inner lead is made larger than the electrode pad of the semiconductor chip, so that the interface between the inner lead and the protruding electrode is It is possible to shift from the position. Thereby, it is possible to alleviate stress concentration at the inner lead when the semiconductor chip is bonded to the tape wiring substrate, and it is possible to suppress disconnection of the inner lead. Thereby, a semiconductor device with a high manufacturing yield can be provided.

  According to the tape wiring substrate of the present invention, the disconnection of the inner lead due to the stress concentration from the protruding electrode with respect to the inner lead when the semiconductor chip is mounted can be alleviated, and a mounting form without restrictions on the pitch of the electrode pads can be realized. .

The top view which shows the structure of the tape wiring board in Embodiment 1 of this invention (A1)-(e1) is a top view which shows the manufacturing method of the tape wiring board, (a2)-(e2) is sectional drawing The top view which shows the structure of the semiconductor device in Embodiment 1 of this invention Sectional view along the BB line of the semiconductor device The top view which shows the structure of the semiconductor device in Embodiment 2 of this invention The top view which shows the structure of the tape wiring board in Embodiment 3 of this invention The top view which shows the structure of the semiconductor device in Embodiment 3 of this invention Plan view showing the structure of a conventional tape wiring board Sectional drawing which shows the structure of the semiconductor device of a prior art example

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Tape base material 2, 2a Inner lead 3, 3a-3e Protrusion electrode 4 Semiconductor chip mounting part 5 Semiconductor chip 6 End row | line | column 7 Photoresist layer 8 Opening part 9 Sparse pitch part 10 Electrode pad 11 Chip side protrusion electrode 12 Passivation 13 Sealing resin

Claims (16)

A flexible insulating substrate;
A plurality of conductor wirings provided on the insulating base material and forming inner leads by end portions arranged in alignment with the region where the semiconductor chip is mounted;
A protruding electrode provided on each inner lead,
In the tape wiring substrate configured to mount the semiconductor chip by face-down bonding by bonding the electrode pad of the semiconductor chip and the protruding electrode,
Among the aligned inner leads, the protruding electrodes formed on the plurality of inner leads arranged at the end of the row gradually move from the inner inner lead to the innermost lead of the innermost row. A tape wiring board characterized in that it is long.   The length of the protruding electrodes formed on at least three of the inner leads from the innermost end row of the aligned inner leads gradually increases as the inner lead becomes the inner lead of the endmost row from the inner inner lead. The tape wiring board according to claim 1. A flexible insulating substrate;
A plurality of conductor wirings provided on the insulating base material and forming inner leads by end portions arranged in alignment with the region where the semiconductor chip is mounted;
A protruding electrode provided on each inner lead,
In the tape wiring substrate configured to mount the semiconductor chip by face-down bonding by bonding the electrode pad of the semiconductor chip and the protruding electrode,
A sparse pitch portion in which the inner leads are arranged at a sparse pitch greater than a predetermined ratio with respect to the minimum pitch between the inner leads;
The length of the protruding electrode formed on the inner lead of the sparse pitch portion is longer than the length of the protruding electrode formed on the inner lead arranged at the minimum pitch. .   The tape wiring substrate according to claim 3, wherein the inner leads of the sparse pitch portion are arranged at a pitch of 1.5 times or more the minimum pitch.   5. The tape wiring substrate according to claim 1, wherein the length of the longest protruding electrode is at least twice the length of the shortest protruding electrode. Providing a plurality of conductor wirings on a flexible insulating base material, and arranging and arranging the end portions thereof in a region where a semiconductor chip is mounted;
Forming a photoresist on the surface of the insulating substrate provided with the conductor wiring;
Forming an opening in the photoresist to expose a portion of the inner lead in the opening;
Forming a protruding electrode by performing metal plating on a part of the exposed inner lead; and
In the method for manufacturing a tape wiring substrate having a step of removing the photoresist,
Among the arrayed inner leads, the opening of the photoresist corresponding to the plurality of inner leads arranged at the end of the row is changed from the inner lead to the inner lead of the outermost row. A method of manufacturing a tape wiring board, wherein the tape wiring board is formed so as to become gradually longer as it becomes. Providing a plurality of conductor wirings on a flexible insulating base material, and arranging and arranging the end portions thereof in a region where a semiconductor chip is mounted;
Forming a photoresist on the surface of the insulating substrate provided with the conductor wiring;
Forming an opening in the photoresist to expose a portion of the inner lead in the opening;
Forming a protruding electrode by performing metal plating on a part of the exposed inner lead; and
In the method for manufacturing a tape wiring substrate having a step of removing the photoresist,
Arranging some of the inner leads at a large pitch larger than a predetermined ratio with respect to the minimum pitch between the inner leads,
The length of the opening of the photoresist corresponding to the inner leads arranged at the large pitch is longer than the length of the opening corresponding to the inner leads arranged at the minimum pitch. A method for manufacturing a tape wiring board. A flexible insulating base material, a plurality of conductor wirings formed on the insulating base material and forming inner leads by end portions arranged in alignment with a region where a semiconductor chip is mounted; and In a semiconductor device comprising: a protruding electrode provided on each inner lead; and the semiconductor chip mounted in a region where the protruding electrode is disposed, wherein the electrode pad of the semiconductor chip and the protruding electrode are joined.
The semiconductor device according to claim 1, wherein the protruding electrode extends beyond the electrode pad on at least the outer side of the corresponding electrode pad in the longitudinal direction.   9. The protruding electrode corresponding to the electrode pad disposed at each of the four corners of the semiconductor chip extends beyond the electrode pad on the side facing at least the outer side of the electrode pad in the longitudinal direction. The semiconductor device described. A flexible insulating base material, a plurality of conductor wirings formed on the insulating base material and forming inner leads by end portions arranged in alignment with a region where a semiconductor chip is mounted; and In a semiconductor device comprising: a protruding electrode provided on each inner lead; and the semiconductor chip mounted in a region where the protruding electrode is disposed, wherein the electrode pad of the semiconductor chip and the protruding electrode are joined.
The length in the longitudinal direction of the plurality of protruding electrodes corresponding to the plurality of electrode pads arranged at the end of the semiconductor chip is longer than the length in the longitudinal direction of the electrode pad and from the inner lead inside. A tape semiconductor device characterized by being gradually longer as it becomes the innermost lead in the outermost row.   The length of the protruding electrode formed on at least three inner leads from the endmost row of the aligned inner leads is longer than the length of the electrode pad, and the inner leads from the inner inner lead to the endmost row The semiconductor device according to claim 10, which becomes gradually longer as it becomes. A flexible insulating base material, a plurality of conductor wirings formed on the insulating base material and forming inner leads by end portions arranged in alignment with a region where a semiconductor chip is mounted; and In a semiconductor device comprising: a protruding electrode provided on each inner lead; and the semiconductor chip mounted in a region where the protruding electrode is disposed, wherein the electrode pad of the semiconductor chip and the protruding electrode are joined.
A sparse pitch portion in which the inner leads are arranged at a sparse pitch greater than a predetermined ratio with respect to the minimum pitch between the inner leads;
The protruding electrode formed on the inner lead of the sparse pitch portion is longer in the longitudinal direction than the corresponding length in the longitudinal direction of the electrode pad, and at least outside the corresponding electrode pad, A semiconductor device characterized by extending beyond.   13. The inner leads of the sparse pitch portion are arranged at a pitch of 1.5 times or more of the minimum pitch, and the length of the protruding electrode is longer than the length of the protruding electrode of the minimum pitch portion. A semiconductor device according to 1.   The semiconductor device according to claim 8, wherein the conductor portion of the electrode pad of the semiconductor chip forms a protrusion.   The conductor part forming the protrusion of the electrode pad is formed of a single layer body, a multilayer body or an alloy body made of a material mainly composed of nickel, copper, aluminum, gold, silver, palladium, or tin. The semiconductor device according to claim 14.   At the junction between the electrode pad and the protruding electrode at the outermost end of the semiconductor chip, the protruding electrode extends at least 30 μm or more from the edge of the electrode pad along the longitudinal direction of the inner lead. The semiconductor device according to claim 8.

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