JP3052148B2 - Electro-optical device - Google Patents
Electro-optical deviceInfo
- Publication number
- JP3052148B2 JP3052148B2 JP23768790A JP23768790A JP3052148B2 JP 3052148 B2 JP3052148 B2 JP 3052148B2 JP 23768790 A JP23768790 A JP 23768790A JP 23768790 A JP23768790 A JP 23768790A JP 3052148 B2 JP3052148 B2 JP 3052148B2
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- electrode
- electro
- optical device
- resistance film
- film
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、表示装置、光シャッター、プロジェクター
表示装置などに関する。The present invention relates to a display device, an optical shutter, a projector display device, and the like.
本発明は、非線形抵抗素子を液晶と直列に形成したア
クティブマトリクス電気光学装置に関し、特に、非線形
抵抗膜を２層以上の積層構造にすることにより、印加電
圧に対して、電流特性が非対称性になるようにし、一画
素の前段選択電極と後段選択電極とにそれぞれ非線形抵
抗素子を形成接続して高品質であり、かつ高い生産性を
有する電気光学装置を提供するものである。The present invention relates to an active matrix electro-optical device in which a non-linear resistance element is formed in series with a liquid crystal, and in particular, by forming a non-linear resistance film into a laminated structure of two or more layers, current characteristics become asymmetric with respect to applied voltage. The present invention provides an electro-optical device having high quality and high productivity by forming and connecting non-linear resistance elements to a first-stage selection electrode and a second-stage selection electrode of one pixel.
非線形抵抗素子と液晶を直列接続した電気光学装置
は、従来公知であり、ポケットテレビなどに使用されて
いる。行列マトリクス電極を形成し、その交叉部に非線
形抵抗素子と液晶を直列に接続したものである。この種
の表示装置は、薄膜トランジスタを用いたものと比較し
て、形成薄膜層数が少なく低コストで作製できる特徴が
ある。しかし、表示パターンの種類によって液晶に印加
される実効電圧が変化するため、特に階調表示を行った
ときの表示品質は悪化した。また、非線形抵抗素子の電
気特性のバラツキや、劣化などの特性の変化に対する表
示品質の管理が困難であった。これらの問題点を解決す
るために、一画素に２個非線形抵抗素子を形成し、一方
を電荷注入用、他方を電荷放出用とした表示装置が提案
された。An electro-optical device in which a non-linear resistance element and a liquid crystal are connected in series is conventionally known, and is used for a pocket television or the like. A matrix resistor is formed by forming a matrix matrix electrode and connecting a non-linear resistance element and a liquid crystal in series at the intersection. This type of display device has a feature that the number of formed thin film layers is small and can be manufactured at low cost as compared with a display device using a thin film transistor. However, since the effective voltage applied to the liquid crystal changes depending on the type of display pattern, the display quality especially when performing gradation display has deteriorated. Further, it has been difficult to manage display quality with respect to variations in electrical characteristics of the nonlinear resistance element and changes in characteristics such as deterioration. In order to solve these problems, there has been proposed a display device in which two nonlinear resistance elements are formed in one pixel, one of which is for charge injection and the other is for charge discharge.
第２図（ａ）は、従来公知であるこの種の電気光学装
置の等価回路図である。21a、21bは走査電極群であり、
21aが電荷注入用走査電極、21bが電荷放出用走査電極で
ある。23aは電荷注入用ダイオード、23bは電荷放出用ダ
イオード、24は液晶である。23a、ｂはｐ−ｉ−ｎ型ダ
イオードや、ツエナーダイオードが用いられる。第２図
（ｂ）は、基板平面図であり、25は画素電極、24は反対
側基板の透明電極、21a、21bは走査電極であり、一画素
に23aと24bの２個のダイオードが画素電極に対して逆極
性で接続され、この種の表示方式によれば、表示画面の
種類や、ダイオードのon電圧特性のバラツキによる、液
晶層への注入電荷量、液晶層からの放出電荷量のバラツ
キを極端に小さくすることができる。FIG. 2 (a) is an equivalent circuit diagram of a conventionally known electro-optical device of this type. 21a and 21b are scanning electrode groups,
21a is a charge injection scan electrode, and 21b is a charge discharge scan electrode. 23a is a charge injection diode, 23b is a charge emission diode, and 24 is a liquid crystal. For 23a and 23b, pin type diodes and Zener diodes are used. FIG. 2 (b) is a plan view of the substrate, 25 is a pixel electrode, 24 is a transparent electrode on the opposite substrate, 21a and 21b are scanning electrodes, and each pixel has two diodes 23a and 24b. According to this type of display system, the amount of charge injected into the liquid crystal layer and the amount of charge discharged from the liquid crystal layer are varied according to the type of display screen and variations in the on-voltage characteristics of the diode. Variation can be made extremely small.
しかしながら、第２図（ｂ）の平面図から明らかなよ
うに、一画素に対して信号ラインが２本であるために、
一単位画素の有効表示面積が約60％以下となって、コン
トラストが低くなるとともに、近接した２本の走査電極
ラインを形成する必要があり、製造工程中のダストなど
による断線、ショートが発生し、特に大面積、高画素密
度電気光学装置を現状生産設備によって安定して製造す
ることは極めて難しい。また、ｐ−ｉ−ｎ型ダイオード
を使用した場合は、駆動電圧が５ボルト以下と低く、製
造工程中の静電気による素子破壊が発生し、製造歩留り
を悪化させた。また、ツエナーダイオードは、ガラスな
どの基板上に多数安定して作製することが困難である。However, as is clear from the plan view of FIG. 2B, since there are two signal lines for one pixel,
The effective display area of one unit pixel is about 60% or less, lowering the contrast and necessitating the formation of two adjacent scanning electrode lines, causing breaks and short circuits due to dust during the manufacturing process. In particular, it is extremely difficult to stably manufacture a large-area, high-pixel-density electro-optical device with current production equipment. In addition, when a pin type diode was used, the driving voltage was as low as 5 volts or less, which caused element destruction due to static electricity during the manufacturing process, thereby deteriorating the manufacturing yield. Moreover, it is difficult to stably manufacture a large number of Zener diodes on a substrate such as glass.
本発明は上記問題点を解決するために、非線形抵抗膜
として、シリコンを主成分とする酸化膜、窒化膜、炭化
膜や、金属酸化膜などの組成比を変えた薄膜を積層し
て、非対称電流電圧特性を有する非線形抵抗素子を、画
素電極と前段走査電極および後段走査電極との間に、画
素電極からみて逆極性になるように接続することによっ
て、走査電極ライン数を従来の1/2にした。また、非線
形抵抗素子の動作電圧範囲を、５−30ボルトの間で任意
に設定できるようにした。In order to solve the above problems, the present invention provides a non-linear resistance film by stacking thin films having different composition ratios such as an oxide film containing silicon as a main component, a nitride film, a carbide film, and a metal oxide film. By connecting a non-linear resistance element having a current-voltage characteristic between the pixel electrode and the pre-stage scan electrode and the post-stage scan electrode so that they have opposite polarities as viewed from the pixel electrode, the number of scan electrode lines is reduced by half compared to the conventional case. I made it. Further, the operating voltage range of the nonlinear resistance element can be arbitrarily set between 5 and 30 volts.
走査電極ライン数を従来構造の1/2に減少し、近接し
て形成する必要がなく、また、駆動電圧は任意に設定す
ることができるため、大面積、高密度、高コントラスト
の電気光学装置を、高い製造歩留りで安定して製造する
ことができる。Since the number of scanning electrode lines is reduced to half that of the conventional structure, there is no need to form them close to each other, and the drive voltage can be set arbitrarily, so a large area, high density, high contrast electro-optical device Can be stably manufactured with a high manufacturing yield.
第１図（ａ）は本発明による電気光学装置の一実施例
を示す等価回路図である。１は走査電極群、２は信号電
極群、3a、3bは非線形抵抗素子であり、前段、後段行に
わたって順方向に接続されている。４は電気光学媒体で
あり、本実施例では液晶を使用し、２個のダイオードの
中間の画素電極に接続される。駆動方法は、選択画素の
前段行と後段行にVop1とVop2の電位を印加し、列電極に
信号電位Vsを印加して液晶層に電荷を注入し、線順次駆
動を行う。第１図（ｂ）は、本発明による電気光学装置
の非線形抵抗素子を形成した基板の平面図を示す一実施
例である。５は金属電極、６は画素電極、７および９は
画素電極６に対して逆方向に接続した非線形抵抗素子で
あり、非線形抵抗素子７は、金属電極5/非線形抵抗膜8/
画素電極６からなる積層構造であり、非線形抵抗素子９
は、前記非線形抵抗素子７と電気的に逆方向の非線形抵
抗素子であり、後段行電極と接続している。10は反対側
基板の信号電極である。画素電極と信号電極は通常導電
膜を使用することができる。第１（ｃ）は本発明による
一実施例である電気光学装置の縦断面図である。断面部
分は第１図（ｂ）のａ−ａ′とｂ−ｂ′部分である。第
１図（ｃ）において、16は非線形抵抗素子を形成した下
側基板、17は上側基板であり、両基板ともガラス基板を
使用、13は液晶、14,15は配向膜、10は上基板の透明電
極である。上記基板の外面には偏向板や反射板が形成さ
れるが、説明を簡単にするために省略した。前段行電極
に接続した非線形抵抗素子の断面構造は、６の画素電
極、11は非線形抵抗膜ａ、12の非線形抵抗膜ｂ、５の金
属電極からなる積層構造である。後段行電極に接続した
非線形抵抗素子の断面構造は、画素電極６と同じ材質で
ある電極6b、11の非線形抵抗膜ａ、12の非線形抵抗膜
ｂ、金属電極６と同じ材質である金属電極5bからなる積
層構造であり、画素電極６と金属電極5b、および電極6b
と後段行金属電極５はオーミック接続している。本実施
例におて、11と12はシリコン窒化膜（SiNx）を用い、11
の非線形抵抗膜ａの組成ｘは1.0から1.3、膜厚５Åから
50Å、非線形抵抗膜ｂの組成比ｘは0.4から0.6、膜厚70
0Åから1300Å形成した。画素電極６、電極6bは、ITO
（インジウム−スズ酸化物）、電極５、5bはCrであり、
約2500Å形成した。動作電圧は非線形抵抗膜ａおよびｂ
の膜厚や組成比ｘを選定することによって、任意に設定
できる。製造工程は、本実施例においては、成膜回数は
非線形抵抗膜ａ、ｂを同一チャンバーで連続して形成す
るので３回、フォトプロセスによるパターニング工程は
３回である。第１図（ｄ）は、非線形抵抗素子の面積が
25μm2、金属電極をGRDにしたときの電流電圧特性図で
ある。±10−7A流れる正負スレッショルド電圧Vf、Vr
は、Vfは７ボルト、Vrは−15ボルトであり、|Vr|＞2Vf
を満足している。FIG. 1A is an equivalent circuit diagram showing an embodiment of the electro-optical device according to the present invention. Reference numeral 1 denotes a scanning electrode group, 2 denotes a signal electrode group, and 3a and 3b denote non-linear resistance elements, which are connected in the forward direction over the preceding and succeeding rows. Reference numeral 4 denotes an electro-optical medium, which uses liquid crystal in this embodiment and is connected to a pixel electrode located between two diodes. In the driving method, the potentials of Vop1 and Vop2 are applied to the preceding and succeeding rows of the selected pixel, the signal potential Vs is applied to the column electrodes, electric charges are injected into the liquid crystal layer, and line-sequential driving is performed. FIG. 1B is an embodiment showing a plan view of a substrate on which a non-linear resistance element of the electro-optical device according to the present invention is formed. 5 is a metal electrode, 6 is a pixel electrode, 7 and 9 are nonlinear resistance elements connected in the opposite direction to the pixel electrode 6, and the nonlinear resistance element 7 is a metal electrode 5 / nonlinear resistance film 8 /
The non-linear resistance element 9 has a laminated structure including the pixel electrodes 6.
Is a non-linear resistance element electrically opposite to the non-linear resistance element 7 and is connected to the subsequent row electrode. Reference numeral 10 denotes a signal electrode on the opposite substrate. Generally, a conductive film can be used for the pixel electrode and the signal electrode. FIG. 1C is a longitudinal sectional view of an electro-optical device according to an embodiment of the present invention. The cross-sections are aa 'and bb' in FIG. 1 (b). In FIG. 1 (c), 16 is a lower substrate on which a non-linear resistance element is formed, 17 is an upper substrate, both substrates use glass substrates, 13 is a liquid crystal, 14 and 15 are alignment films, and 10 is an upper substrate. Is a transparent electrode. A deflection plate and a reflection plate are formed on the outer surface of the substrate, but are omitted for the sake of simplicity. The cross-sectional structure of the non-linear resistance element connected to the preceding row electrode is a laminated structure including six pixel electrodes, 11 a non-linear resistance film a, 12 a non-linear resistance film b, and a metal electrode. The cross-sectional structure of the non-linear resistance element connected to the second row electrode is the same as that of the pixel electrode 6, the electrodes 6 b, the non-linear resistance film a of 11, the non-linear resistance film b of 12, and the metal electrode 5 b of the same material as the metal electrode 6. A pixel electrode 6, a metal electrode 5b, and an electrode 6b.
And the subsequent-stage metal electrode 5 are in ohmic connection. In this embodiment, 11 and 12 use a silicon nitride film (SiNx).
The composition x of the non-linear resistance film a is from 1.0 to 1.3, and the film thickness from 5 °
50 °, composition ratio x of non-linear resistance film b is 0.4 to 0.6, film thickness 70
Formed from 0Å to 1300Å. Pixel electrode 6 and electrode 6b are made of ITO
(Indium-tin oxide), electrodes 5, 5b are Cr,
Approximately 2500 mm formed. The operating voltage is the nonlinear resistance films a and b.
Can be arbitrarily set by selecting the film thickness and the composition ratio x. In the present embodiment, in the present embodiment, the number of times of film formation is three because the non-linear resistance films a and b are continuously formed in the same chamber, and the number of patterning steps by the photo process is three. FIG. 1 (d) shows that the area of the nonlinear resistance element is
It is a current-voltage characteristic diagram when 25 μm 2 and the metal electrode are GRD. ± 10-7A positive and negative threshold voltage Vf, Vr
Is Vf 7 volts, Vr -15 volts, | Vr |> 2Vf
Are satisfied.
本実施例では、非線形抵抗膜としてSiNx膜について説
明してきたが、これをシリコン酸化膜、シリコン炭化
膜、あるいは、これらの材料の組合わせ、また、非線形
抵抗膜として、CrOx、AlOx、TaOxなどの金属酸化物など
を使用することができる。In the present embodiment, the SiNx film has been described as the non-linear resistance film.However, this is a silicon oxide film, a silicon carbide film, or a combination of these materials, and as the non-linear resistance film, CrOx, AlOx, TaOx, etc. Metal oxides and the like can be used.
以上述べたきたように、本発明の電気光学装置は、同
一画素電極の前段行と後段行間に逆極性の非線形抵抗素
子を形成することにより、走査電極ライン数を従来構造
の1/2に減少し、近接して形成する必要がなく、また、
駆動電圧は、非線形抵抗膜の膜厚や組成比ｘを変えるこ
とにより、任意に設定することができるため、大面積、
高密度、高コントラストの電気光学装置を高い製造歩留
りで安定して製造することができるという優れた効果を
有する。As described above, the electro-optical device of the present invention reduces the number of scan electrode lines to half that of the conventional structure by forming a non-linear resistive element having the opposite polarity between the preceding and succeeding rows of the same pixel electrode. And need not be formed in close proximity,
The drive voltage can be arbitrarily set by changing the thickness of the nonlinear resistance film and the composition ratio x, so that a large area,
It has an excellent effect that a high-density, high-contrast electro-optical device can be stably manufactured with a high manufacturing yield.
第１図（ａ）は本発明による電気光学装置の等価回路
図、第１図（ｂ）は本発明による電気光学装置の一実施
例である平面図、第１図（ｃ）は本発明による電気光学
装置の一実施例である縦断面図、第１図（ｄ）は本発明
による電気光学装置の電流対電圧特性グラフ、第２図
（ａ）は従来公知である１画素に２個非線形抵抗素子を
形成した電気光学装置の等価回路図、第２図（ｂ）は従
来公知である前記電気光学装置の平面図である。 １……走査電極群 ２……信号電極群 3a,3b,7,8……非線形抵抗素子 8,11,12……非線形抵抗膜 5,5b……金属電極 6,6b……抵抗電極FIG. 1A is an equivalent circuit diagram of the electro-optical device according to the present invention, FIG. 1B is a plan view showing one embodiment of the electro-optical device according to the present invention, and FIG. FIG. 1 (d) is a current-voltage characteristic graph of an electro-optical device according to the present invention, and FIG. 2 (a) is a conventional non-linear configuration of two pixels per pixel. FIG. 2B is an equivalent circuit diagram of an electro-optical device having a resistance element formed thereon, and FIG. 2B is a plan view of the conventionally known electro-optical device. 1 ... scanning electrode group 2 ... signal electrode group 3a, 3b, 7, 8 ... nonlinear resistance element 8, 11, 12 ... nonlinear resistance film 5, 5b ... metal electrode 6, 6b ... resistance electrode
フロントページの続き (56)参考文献 特開 平２−134618（ＪＰ，Ａ) 特開 平１−225923（ＪＰ，Ａ) 特開 平２−198432（ＪＰ，Ａ) 特開 平２−170136（ＪＰ，Ａ) 特開 平２−168237（ＪＰ，Ａ) 特開 平２−168238（ＪＰ，Ａ) 特開 平２−168239（ＪＰ，Ａ) 特開 平１−292319（ＪＰ，Ａ) 特開 昭63−229483（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G02F 1/1365 Continuation of the front page (56) References JP-A-2-134618 (JP, A) JP-A-1-225923 (JP, A) JP-A-2-198432 (JP, A) JP-A-2-170136 (JP) JP-A-2-168237 (JP, A) JP-A-2-168238 (JP, A) JP-A-2-168239 (JP, A) JP-A-1-292319 (JP, A) JP 63-229483 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) G02F 1/1365
Claims (4)
と、前記基板と対向するとともに対向電極が形成された
対向基板と、前記画素電極と前記対向電極との間に設け
られた電気光学媒体と、を有し、行（列）方向に複数個
並んだ画素電極からなる行（列）電極群を選択し、前記
対向電極に信号を与えて駆動する電気光学装置におい
て、 隣接する各行（列）電極群の間には、ただ１つの走査電
極が設けられ、 各行（列）電極群に対して前段の走査電極と該各行
（列）電極群を構成する画素電極との間に第１の非線形
抵抗膜を設けることにより形成された第１の非線形抵抗
素子と、該各行（列）電極群に対して後段の走査電極と
該各行（列）電極群を構成する画素電極との間に第２の
非線形抵抗膜を設けることにより形成された第２の非線
形抵抗素子と、を備え、 前記第１の非線形抵抗素子と前記第２の非線形抵抗素子
が、非対称電流電圧特性を有するとともに画素電極から
見て逆極性になるように接続されたことを特徴とする電
気光学装置。1. A substrate having a plurality of pixel electrodes formed in a grid, an opposing substrate opposing the substrate and having an opposing electrode formed thereon, and an electric device provided between the pixel electrode and the opposing electrode. An electro-optical device, comprising: a row (column) electrode group including a plurality of pixel electrodes arranged in a row (column) direction and applying a signal to the counter electrode to drive the counter electrode; Only one scanning electrode is provided between the (column) electrode groups, and a first scanning electrode is provided between the scanning electrode in the preceding stage of each row (column) electrode group and the pixel electrode constituting each row (column) electrode group. A first non-linear resistance element formed by providing one non-linear resistance film, and a scanning electrode at a subsequent stage to each row (column) electrode group and a pixel electrode constituting each row (column) electrode group. Second nonlinear resistance film formed by providing a second nonlinear resistance film A resistance element, wherein the first nonlinear resistance element and the second nonlinear resistance element are connected so as to have asymmetric current-voltage characteristics and to have opposite polarities when viewed from the pixel electrode. Electro-optical device.
形抵抗膜のうち少なくとも一方が、組成の異なる複数の
層からなる積層構造を備えることを特徴とする請求項１
に記載の電気光学装置。2. The semiconductor device according to claim 1, wherein at least one of said first nonlinear resistance film and said second nonlinear resistance film has a laminated structure including a plurality of layers having different compositions.
An electro-optical device according to claim 1.
形抵抗膜が、組成の異なる複数の層からなる積層構造を
備えることを特徴とする請求項１に記載の電気光学装
置。3. The electro-optical device according to claim 1, wherein the first nonlinear resistance film and the second nonlinear resistance film have a stacked structure including a plurality of layers having different compositions.
x）であり、前記複数の層が、組成ｘが1.0〜1.3で膜厚
が５〜50Åの非線形抵抗膜と、組成ｘが0.4〜0.6で膜厚
が700〜1300Åの非線形抵抗膜と、を含んだ積層構造で
あることを特徴とする請求項３に記載の電気光学装置。4. The method according to claim 1, wherein the non-linear resistance film is a silicon nitride film (SiN film).
x) wherein the plurality of layers are a non-linear resistance film having a composition x of 1.0 to 1.3 and a thickness of 5 to 50 °, and a non-linear resistance film of a composition x of 0.4 to 0.6 and a thickness of 700 to 1300 °. The electro-optical device according to claim 3, wherein the electro-optical device has a laminated structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23768790A JP3052148B2 (en) | 1990-09-06 | 1990-09-06 | Electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23768790A JP3052148B2 (en) | 1990-09-06 | 1990-09-06 | Electro-optical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04116527A JPH04116527A (en) | 1992-04-17 |
| JP3052148B2 true JP3052148B2 (en) | 2000-06-12 |
Family
ID=17019022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23768790A Expired - Fee Related JP3052148B2 (en) | 1990-09-06 | 1990-09-06 | Electro-optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3052148B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3963974B2 (en) | 1995-12-20 | 2007-08-22 | 株式会社半導体エネルギー研究所 | Liquid crystal electro-optical device |
-
1990
- 1990-09-06 JP JP23768790A patent/JP3052148B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04116527A (en) | 1992-04-17 |
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