JP3037032B2 - Plasma CVD apparatus and film forming method using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD apparatus and a film forming method using the same, and more particularly, to a plasma CVD apparatus that establishes conduction with a holder from a wafer surface and a film forming method using the same.

[0002]

2. Description of the Related Art A conventional plasma CVD apparatus and a film forming method using the same will be described with reference to FIG. In FIG.
3 (A) is a plan view of a plasma CVD apparatus before the film formation of the wafer 2, while FIG. 3 (B) Figure 3 cut lines (A) A-
It is sectional drawing of the A section.

FIG. 3 (C) shows a wafer 2 in a holder 1.
FIG. 3 is a view seen from below when set to FIG.
(D) is a cross-sectional view taken along the line B-B section of FIG. 3 (C).

As shown in FIGS. 3 ( A ) and 3 ( B ), in the conventional film forming method, the aluminum 4 on the insulating film 3 is etched from the outer periphery of the wafer 2 by 1 mm to 2 mm. Is set as shown in FIG. 3 ( C ),
As shown in ( D ), the aluminum 4 did not come into contact with the holder 1 and conduction was not properly achieved.

[0005]

The conventional plasma C
In a VD apparatus and a film forming method using the same, aluminum 4
There is a case where conduction does not take place well due to contact between the device and the holder 1 and there is a problem that the film formation varies.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma CVD apparatus capable of forming a uniform film by establishing conduction between a holder for placing the wafer surface downward and aluminum on the wafer surface, and a film forming method using the same.

[0007]

The structure of the plasma CVD apparatus according to the first invention of the present invention is used for manufacturing a semiconductor device.
In a plasma CVD system, the surface of the wafer faces downward.
A holder placed on come, means for taking the conduction of the wafer
With the door, wherein the holder has a larger contact portion portion of the orientation flat of the wafer.

Further, the plasma CV of the second invention of the present invention
The film formation method using the D apparatus is based on the insulation formed on the wafer.
The outer peripheral portion of aluminum on the film is removed by etching,
Setting the surface of the wafer down to increase the holder the contact portion between the orientation flat of the wafer
And location, by performing plasma discharge taking conduction between the holder and the aluminum surface of the wafer, and forming a uniform film.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a wafer before film formation for explaining the first embodiment of the present invention, a cross-sectional view taken along line AA thereof, and a bottom view when the wafer is set in a wafer holder of a plasma CVD apparatus. FIG. 2 is a plan view and a sectional view taken along line BB.

[0010] Figure 1 for setting the wafer 2 to the improved holder 7 (C), improved aluminum 4 orientation flat 5 parts of the wafer 2 as shown in (D) Holder 7
, The electrical connection between the improved holder 7 and the aluminium 4 is established, a uniform plasma discharge is generated, and a uniform film is grown.
According to the present embodiment configured as described above, the variation in film thickness in a lot can be reduced from 16.4% to 1.8%.
In addition, because it has taken the conduction from the orientation flat part 5, good number of the wafer is equivalent to that of the conventional Oh
You .

FIG . 2 illustrates a technique related to the present invention.
Plan view of a wafer before film formation and its AA line
Below the cross-section and when the wafer is set in the holder
FIG. 3 is a plan view as viewed from above and a cross-sectional view taken along line BB. FIG.
As shown in ( A ) and ( B ), the amount of etching of the aluminum 4 on the insulating film 3 on the wafer 2 was reduced from 1 mm to 2 mm from the conventional outer circumference to 0.5 mm from the conventional outer circumference, so that the wafer 2 was reduced. when set to the holder 1, 2
As shown in ( C ) and ( D ), the aluminum 4 on the outer periphery of the wafer comes into contact with the holder 1, and the holder 1 and the aluminum 4
And the plasma discharge occurs uniformly, and a uniform film is grown.

[0012]

As described above, the present invention has an effect that a uniform plasma discharge is generated due to good contact between the aluminum on the wafer outer peripheral portion and the wafer holder, and a uniform film is grown.

[Brief description of the drawings]

FIG. 1 is a plan view of a wafer before film formation, a cross-sectional view taken along line AA thereof, and a plasma C for explaining an embodiment of the present invention.
FIG. 3 is a plan view when a wafer is set on a wafer holder of the VD apparatus and a cross-sectional view taken along line BB.

FIG. 2 is a plan view of a wafer before film formation, a cross-sectional view taken along line AA thereof, and a plan view of a wafer set in a wafer holder of a plasma CVD apparatus for explaining a technique related to the present invention; It is sectional drawing in the -B line.

FIG. 3 is a plan view of a wafer before film formation in a conventional plasma CVD apparatus, a cross-sectional view taken along line AA thereof, and plasma CVD.
FIG. 3 is a plan view when a wafer is set on a wafer holder of the apparatus and a cross-sectional view taken along line BB of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Holder 2 Wafer 3 Insulating film 4 Aluminum 5 Orientation flat 6 Beret 7 Improved holder

Claims (2)

(57) [Claims] 1. A plasma C used for manufacturing a semiconductor device.
In a VD device, a semiconductor substrate (hereinafter referred to as a wafer)
A wafer electrode holder to put down a surface (hereinafter referred to as the holder), and means for taking a continuity of the wafer, Orientation sucrose of the holder the wafer
A plasma CVD apparatus characterized by having a large contact portion with a flat portion . Wherein the outer peripheral portion of the aluminum on the insulating film formed on the wafer is removed by etching, down to the surface of the wafer to increase the holder the contact portion between <br/> orientation flat of the wafer installed, by performing plasma discharge I and <br/> conduction between the holder and the aluminum surface of the wafer, deposition method of the plasma CVD apparatus, and forming a uniform film.