JP3024900B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device on which electronic components are mounted, and more particularly to a hybrid device having a high operating frequency.
C and the like.

[0002]

2. Description of the Related Art In recent years, electronic devices have become increasingly smaller and more sophisticated.
The operating speed has been increased, and modularization is in progress.

Hereinafter, a conventional semiconductor device such as a hybrid IC will be described with reference to the drawings.

FIG. 5 shows a first example using a wire bonding method.
1 is a front view of the conventional hybrid IC as viewed from directly above. In FIG. 5, reference numeral 51 denotes a wiring board in which wiring is formed on an insulating substrate; 52, a semiconductor element; 53, a discrete component;
Reference numeral 55 denotes a wiring of the wiring board, and the semiconductor element 52 is electrically connected to the wiring 55 by a wire bonding method in a face-up manner.

FIG. 6 shows an example of a manufacturing process of a hybrid IC using the wire bonding method of the first conventional example shown in FIG.

In FIG. 6, a discrete component 53 is first placed on a wiring board 51 (FIG. 6A) on which a wiring 55 is formed.
Is mounted on the wiring 55 by the solder reflow method (FIG. 6).
(B)). Next, the semiconductor element 52 is die-bonded to the wiring board 51 with the conductive adhesive 56 (FIG. 6C). Further, the electrode pads 57 of the semiconductor element 52 and the wiring board 51 corresponding to the electrode pads 57 are electrically connected by wires 54 by a wire bonding method (FIG. 6D).

FIG. 7 is a cross-sectional view of a second conventional hybrid IC using the flip-chip method. In FIG. 7, reference numeral 71 denotes a wiring board having wiring formed on an insulating substrate, 72 denotes a semiconductor element, 73 denotes a discrete component, 74 denotes a solder bump in a flip chip method,
Reference numeral 75 denotes wiring on the wiring board.

FIG. 8 shows an example of a manufacturing process of a hybrid IC using the flip chip method of the second conventional example shown in FIG.

Referring to FIG. 8, a semiconductor element 72 and a discrete component 73 are placed together with a solder paste 76 and the like on a wiring board 71 (FIG. 8A) on which a wiring 75 is formed (FIG. 8B). Next, the semiconductor element 72 and the discrete component 73 are mounted on the wiring board 71 by a solder reflow method (FIG. 8C).

[0010]

However, the first and second conventional methods for manufacturing a semiconductor device have the following problems particularly in the case of a hybrid IC that requires a high-speed operation of the semiconductor device. .

The above-described conventional semiconductor device is, for example, 20 to
When operated at a high frequency such as 60 GHZ, the dispersion of the capacitance of the discrete components, the stray capacitance and inductance of the wire 54 for wire bonding, and the inability to control the height of the bump 74 during flip chip mounting and the use of relatively large bonding pads Unnecessary stray capacitance generated between the semiconductor element and the wiring board due to
The transmission characteristics of the wiring on the circuit board are greatly affected, and the performance as designed cannot be obtained. That is, the conventional semiconductor device has a problem that when operated at a high frequency, the stray capacitance with variation hinders the accurate operation of a semiconductor device such as a hybrid IC.

The present invention has been made in view of the above-mentioned problems, and minimizes the stray capacitance existing in a conventional semiconductor device, and variously utilizes the minimum stray capacitance in reverse. It is an object to provide a semiconductor device whose capacity can be controlled. Another object of the present invention is to provide a semiconductor device which has an accurate passive circuit by controlling the stray capacitance as described above, reduces loss of a transmitted signal, and reduces power consumption. A further object of the present invention is to provide a semiconductor device capable of measuring a capacitance and accurately controlling a distance between an electronic component such as a semiconductor element and a substrate.

[0013]

In order to solve the above problems, a semiconductor device according to the present invention comprises: a wiring board having a bonding pad; an electronic component connected to the bonding pad via a metal projection; It has a configuration provided with a resin formed between the substrate and the electronic component and for fixing the electronic component to the wiring substrate, and a unit for measuring a capacitance between the wiring substrate and the electronic component.

The method of manufacturing a semiconductor device according to the present invention includes a resin application step of applying a resin for fixing the electronic component on a wiring board on which the electronic component is mounted, a bonding pad on the wiring board and the electronic component. An electronic component alignment step of aligning the metal projection with the electronic component; an electronic component pressing step of pressing the electronic component to connect to the bonding pad via the metal projection; A capacitance measuring step of measuring a capacitance, an electronic component pressure adjusting step of adjusting a pressing amount of the electronic component to the bonding pad based on information obtained in the capacitance measuring step, and curing the resin And a resin curing step.

[0015]

With the above arrangement, the stray capacitance can be reduced as much as possible by precisely controlling the distance between the electronic component and the wiring board, and a desired capacitance can be formed by using a conventional stray capacitance. can do.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a front view of a semiconductor device according to an embodiment of the present invention as viewed from directly above.

FIG. 2 is a sectional view of a semiconductor device according to an embodiment of the present invention, and FIG.
FIG. 2B is a cross-sectional view taken along the line AA ′ in FIG.
FIG. 3 shows a cross-sectional view of a B ′ line portion.

In FIGS. 1 and 2, 1 is a wiring board on which wiring such as a microstrip line is formed, 2 is an electronic component such as a semiconductor element mounted face-down, 3 is a wiring, and 4 is a capacitor for measuring capacitance. Probing pads, 5
Is a ground pad, 6 is a ground plane, 7 is a metal projection (hereinafter simply referred to as a bump) for connecting the electronic component 2 and the wiring board 1, 8 is a bonding pad, and 9 is the electronic component 2 by the bump 7. A photo-curing insulating resin 15 for fixing the connection with the wiring board 1, and 15 denotes an insulating film.

FIG. 3 shows the steps of a method for manufacturing a semiconductor device according to the embodiment of the present invention.

First, wiring 3 such as a microstrip line
A photocurable insulating resin 9 is applied on the wiring board 1 on which the wiring board 1 is formed, and the electronic component 2 on which the bumps 7 are formed is aligned with the corresponding bonding pad 8 on the wiring board 1 (FIG. 3A). .

Next, the electronic component 2 is pressed by the pressing tool 11 via the photocurable resin. In the present invention, FIG.
As shown in (b), the electronic component 2 is
When the electronic component 2 is being pressed,
The stray capacitance is controlled by accurately controlling the distance between the wiring board 1 and the wiring board 1 (that is, the height of the bump 7). Specifically, FIG.
As shown in (b), the probe 10 of the network analyzer is brought into contact with the probing pad 4, thereby measuring, for example, the S parameter to control the stray capacitance between the electronic component 2 and the wiring board 1. The measured S-parameters are displayed on a Smith chart or the like as shown in FIG. 4, and the amount of pressurization of the pressurizing tool 11 is adjusted so that the simulated value or the actually measured value 12 of another sample matches the measured value 13 during mounting. Adjust.

At this time, the S parameter was measured in the high frequency region, but the capacitance value can be directly measured by an L, C, R meter or the like in the low frequency region. The ground pad is formed near the probing pad 4 because a ground is required in the high frequency region, but the ground pad 5 beside the probing pad need not be formed in the low frequency region.

Further, the amount of pressurization of the pressurizing tool 11 is optimized, and the photocurable insulating resin 9 is cured by irradiating ultraviolet light 14 while maintaining the load (FIG. 3C). Thereafter, the pressing tool 11 is removed, and the mounting of the electronic component 2 on the wiring board 1 is completed.

In the above embodiment, by adjusting the measured S parameter to a desired value, the amount of pressure applied by the pressing tool 11 is adjusted to optimize the capacity between the electronic component 2 and the wiring board 1. However, the distance between the electronic component 2 and the wiring board 1 can be accurately known by measuring the S parameter.

In the present embodiment, even if the dielectric constant of the photocurable insulating resin 9 is changed in addition to the distance between the electronic component 2 and the wiring board 1 based on the adjustment of the amount of pressing of the pressing tool 11, Desired capacity, loss, etc. can be obtained.

In this embodiment, the photocurable insulating resin 9 is used. However, the photocurable insulating resin 9 may be replaced with a resin having adhesive properties such as thermosetting resin or thermoplastic resin.

[0028]

As is apparent from the above description, the present invention comprises a wiring board and a means for measuring the capacitance of the electronic component mounted on the wiring board. Since the amount of pressurization by the pressurizing tool is adjusted, the distance between the electronic component and the wiring board can be accurately controlled. Therefore, the stray capacitance can be suppressed to a minimum, and a desired capacitance can be formed using a stray capacitance that has been conventionally used. Further, if various capacitances are set by changing the dielectric constant of the insulating resin, an accurate passive circuit can be formed in a hybrid IC operating at high speed.
Loss of a transmitted signal can be reduced, and power consumption can be reduced. Further, it is possible to accurately control the distance between an electronic component such as a semiconductor element and a substrate by measuring the capacitance.

[Brief description of the drawings]

FIG. 1 is a front view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.

FIG. 3 is a manufacturing process diagram of the semiconductor device according to the embodiment of the present invention.

FIG. 4 is a Smith chart displaying S-parameters measured by a unit for measuring a capacitance between a wiring board and an electronic component according to the embodiment of the present invention.

FIG. 5 is a front view of a hybrid IC using a wire bonding method in a first conventional example.

FIG. 6 is a manufacturing process diagram of a hybrid IC using a wire bonding method in a first conventional example.

FIG. 7 is a front view of a hybrid IC using a flip chip method in a second conventional example.

FIG. 8 is a manufacturing process diagram of a hybrid IC using a flip chip method in a second conventional example.

[Explanation of symbols]

Reference Signs List 1 Wiring board on which wiring such as microstrip line is formed 2 Electronic component such as semiconductor element 3 Wiring 4 Probing pad 5 Ground pad 6 Ground plane 7 Bump 8 Bonding pad 9 Photocurable insulating resin 10 Probe 11 Pressure tool 12 S parameter Simulation value of 13 S-parameter measured value 14 Ultraviolet light 15 Insulating film 51 Wiring board 52 Semiconductor element 53 Discrete part 54 Wire 55 Wiring 56 Conductive adhesive 57 Electrode pad 71 Semiconductor substrate 72 Semiconductor element 73 Discrete part 74 Solder bump 75 Wiring 76 Solder paste

──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Hiroyuki Sakai 1006 Kadoma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Inventor Kaoru 1006 Kadoma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/60 311 H01L 25/04

Claims (5)

(57) [Claims] A wiring board having a bonding pad;
An electronic component connected to the bonding pad via a metal protrusion; a resin formed between the wiring board and the electronic component for fixing the electronic component to the wiring board; and a resin between the wiring board and the electronic component. Means for measuring the capacitance of the semiconductor device. 2. The semiconductor device according to claim 1, wherein a probing pad is provided on the wiring board as means for measuring a distance between the wiring board and the electronic component. 3. A resin coating step of coating a resin fixing the electronic component on a wiring board on which the electronic component is mounted, and positioning the bonding pad on the wiring board with a metal projection of the electronic component. An alignment step, an electronic component pressing step of pressing the electronic component to connect to the bonding pad via the metal protrusion, and a capacitance measuring step of measuring a capacitance between the wiring board and the electronic component,
A semiconductor device comprising: an electronic component pressure adjusting step of adjusting an amount of pressure applied to the bonding pad of the electronic component based on information obtained in the capacitance measuring step; and a resin curing step of curing the resin. Manufacturing method. 4. The capacitance measuring step, wherein an S-parameter and a capacitance are measured from a probing pad provided on the wiring board during the pressing step, and an optimum value of the capacitance is determined. Of manufacturing a semiconductor device. 5. The method for manufacturing a semiconductor device according to claim 3, wherein the capacitance is adjusted by using resins having different dielectric constants as a resin for fixing the electronic component on the wiring board.