JP3779504B2 - Manufacturing method of semiconductor module - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a semiconductor module including an IC chip and an antenna coil for wireless communication, and more particularly to means for stabilizing the communication characteristics of the semiconductor module.
[0002]
[Prior art]
Conventionally, a non-contact type semiconductor device in which a semiconductor module formed by connecting an antenna coil for wireless communication to an input / output terminal of an IC chip is known. This type of semiconductor device is formed into a desired shape such as a card shape, a tag shape, or a coin shape by casing the semiconductor module with a resin material or the like, and is thin and has an abundant amount of information and high security performance. Therefore, it is spreading in a wide range of fields such as transportation, distribution, and information communication.
[0003]
Conventionally, as a method for manufacturing the semiconductor module, an average frequency characteristic (rated value) of an IC chip group to be used is measured without measuring the frequency characteristic of each manufactured IC chip in order to increase the manufacturing efficiency. Based on the above, a method of designing an antenna coil capable of exhibiting predetermined communication characteristics after the casing and connecting the antenna coil of the same specification manufactured based on this design to the input / output terminal of the IC chip of the same rating It has been.
[0004]
[Problems to be solved by the invention]
However, even if the rated values are the same, there is some variation in the frequency characteristics of the IC chip, so that the communication characteristics of the completed semiconductor module can be achieved with a configuration in which antenna coils of the same specifications are connected as in the past. As a result, the communication characteristics of the semiconductor device also inevitably vary, thereby easily causing a communication error. Therefore, it is difficult to construct a highly reliable communication system.
[0005]
In addition to the frequency characteristics of the IC chip, the communication characteristics of the semiconductor device vary depending on the specifications of the antenna coil, the casing material, the size of the casing, and the like. Design and manufacture a new antenna coil every time the rating of the IC chip, the specifications of the antenna coil, the casing material or the casing size is changed. Inevitably, it becomes difficult to inexpensively manufacture various types of semiconductor devices having different specifications.
[0006]
The present invention was made in view of such circumstances, and its object is a semiconductor module having a stable communication characteristics to provide a method of manufacturing the easily.
[0007]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides a method of manufacturing a semiconductor module by connecting input / output terminals of an IC chip to both ends of an antenna coil formed on an insulating substrate, used as the pair of capacitance pads for constituting one capacitor at a site opposing the front and back surface is formed, and with the capacitance pads and the antenna coil is connected via a pre-read pattern, the According to the frequency characteristics of the IC chip connected to the antenna coil, in the method of manufacturing a semiconductor module, the area of the capacitor pad connected to the antenna coil is reduced and the impedance of the semiconductor module is adjusted within an allowable range. Prior to connecting the IC chip to the antenna coil, the frequency characteristics of the IC chip are measured and the IC chip is measured. Calculate the capacitance of the antenna coil necessary to obtain the required impedance for the semiconductor module to which the is connected, obtain the area of the capacitance pad having the required capacitance from the calculated value, and calculate the excess amount of the capacitance pad. After that, the IC chip is connected to the antenna coil .
[0015]
According to these methods, even if the frequency characteristics of the IC chip vary, the impedance of the semiconductor module can be adjusted within a required allowable value by appropriately adjusting the area of the capacitor pad formed on the insulating substrate. Therefore, it is possible to stabilize the communication characteristics of the semiconductor module and the semiconductor device on which the product is mounted regardless of whether the frequency characteristics of the IC chip vary or not.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
First, an example of a semiconductor module according to the present invention will be described with reference to FIGS. 1 is a front view of a semiconductor module according to the first embodiment, FIG. 2 is a front view and a rear view of an insulating substrate applied to the semiconductor module according to the first embodiment, and FIG. 3 is an IC chip mounted thereon. 4 is a front view of the insulating substrate, FIG. 4 is a cross-sectional view of a principal part showing a connection state between the front surface pattern and the back surface pattern of the insulating substrate, and FIG. 5 is a circuit diagram showing an equivalent circuit of the semiconductor module shown in FIG.
[0017]
As is apparent from FIG. 1, the semiconductor module 1 of this example includes an insulating substrate 2 having a required circuit pattern shown in FIG. 2 formed on the front surface and the back surface, and an IC chip 3 mounted on the insulating substrate 2. It is composed of
[0018]
On the surface of the insulating substrate 2, as shown in FIG. 2 (a), the spiral portion 4a of the antenna coil 4 and the antenna coil 4 connected to the outer peripheral end of the spiral portion 4a through a back surface pattern to be described later. Branched from the extended portion 4b, the inner peripheral end of the spiral portion 4a and the IC chip connecting pad portion 5 extended from one end of the extended portion 4b, and the vicinity of the inner peripheral end of the spiral portion 4a A capacitor pad lead 6 and one capacitor pad 7 are formed. Further, the inner peripheral end of the spiral portion 4a from which the IC chip connecting pad portion 5 extends and the one end of the extension portion 4b are wider than the line widths of the spiral portion 4a and the extension portion 4b, respectively. Wide measuring terminals 9 and 10 are formed, and the other end of the extended portion 4b and the outer peripheral end of the spiral portion 4a are wider than the line widths of the spiral portion 4a and the extended portion 4b, respectively. Bonding terminals 11 and 12 are formed.
[0019]
On the other hand, on the back surface of the insulating substrate 2, as shown in FIG. 2B, a capacitor pad 13 of the same shape and size is formed at a portion facing the capacitor pad 7. In addition, bonding terminals 14 and 15 having substantially the same shape and size are formed in portions facing the bonding terminals 11 and 12, and the lead is interposed between the bonding terminal 14 and the capacitor pad 13. 6 is formed, and a connecting lead 18 is formed between the joining terminal 15 and the lead 16 to connect them.
[0020]
Therefore, the capacitor C is formed by the capacitor pad 7 and the capacitor pad 13 which are formed on the opposing surfaces of the front and back surfaces through the insulating substrate 2. The capacitance of the capacitor C can be set to an appropriate value as necessary. However, it is preferable that the capacitance is as large as possible in order to cope with a wide range of specifications.
[0021]
Further, the joining terminals 11 and 14 and the joining terminals 12 and 15 are connected to each other through a through hole 19 as shown in FIG. 4, whereby the outer peripheral end of the spiral portion 3 a is connected to the main lead 16. The antenna coil 4 connected to the extending portion 3b via the first and second ends and disposed at adjacent positions on the surface side of the insulating substrate 2 is formed. A capacitor C constituted by the capacitor pad 13 is connected. The capacitance of the capacitor C is set to a value at which all IC chips 3 having the same rated value can be used in consideration of the variation in frequency characteristics of the IC chip 3 used.
[0022]
The through hole 19 can be formed in accordance with a conventional method. In addition, after the bonding terminals 11, 12, 14, 15 are formed on the front and back surfaces of the insulating substrate 2 having no through holes, the bonding terminals 11, 12 are formed. , 14 and 15 can be formed by piercing a needle-like tool and breaking through the insulating substrate 2. For example, as shown in FIG. 4, when a needle-like tool T is pierced into the joining terminal 11, the insulating substrate 2 is pierced to form a through hole 19 in the insulating substrate 2, and one of the joining terminals 11. The portion is deformed along the through hole 19 and is electrically connected to the bonding terminal 14 disposed opposite to the through hole 19. Similarly, when the needle-shaped tool T is pierced into the joining terminal 12, the insulating substrate 2 is pierced to form a through hole 19 in the insulating substrate 2, and a part of the joining terminal 12 is passed through the through terminal. It deforms along the hole 19 and is electrically connected to the bonding terminal 15 disposed opposite to the hole 19. The same applies when the tool T is pierced from the joining terminals 14 and 15 side.
[0023]
As shown in FIG. 3, the IC chip 3 is connected to a pad portion 5 formed on the surface of the insulating substrate 2. As the IC chip 3, any publicly known IC chip can be used. However, in order to reduce the thickness of the semiconductor module and the semiconductor device using the semiconductor chip, a bare IC chip that is not packaged is used. Is particularly preferred. In order to further reduce the thickness of the semiconductor module and the semiconductor device using the semiconductor module, the non-patterned surface is polished and thinned by chemical means, mechanical means, or both means. It is particularly preferable to use a bare IC chip. The IC chip 3 can be connected to the pad portion 5 formed on the surface of the insulating substrate 2 by a face-down method using solder, conductive paste, conductive adhesive (ACF), or the like.
[0024]
At the stage where the IC chip 3 is mounted on the insulating substrate 2 configured as described above, the semiconductor module 1 according to the present embodiment has a capacitor pad 7 at one end of the antenna coil 4 as shown in FIG. 6 and a capacitor pad 13 is connected to the other end of the antenna coil 4 via a lead 16, and an equivalent circuit thereof is configured as shown in FIG.
[0025]
The capacitance that the semiconductor module 1 should have depends on the frequency characteristics of the IC chip 3 to be mounted. The area of the capacitor pads 7 and 13 connected to both ends of the antenna coil 4 is the IC chip to be mounted. 3 is adjusted as appropriate according to the frequency characteristics. In the example of FIG. 1, the area of the capacity pads 7 and 13 connected to both ends of the antenna coil 4 is reduced to about ½ of the area of the capacity pads 7 and 13 shown in FIGS. Adjustment of the area of the capacitor pads 7 and 13 can be performed by trimming or the like.
[0026]
The capacitance of the semiconductor module 1 according to the embodiment can be adjusted by the procedure shown in the flowcharts of FIGS.
[0027]
In the method of FIG. 6, after the IC chip 3 is mounted on the insulating substrate 2, the tester electrode is applied to the measurement terminals 9 and 10, the impedance of the semiconductor module 1 is measured (step S1), and the measured value is It is determined whether it is within a predetermined allowable range (step S2). If it is determined that the measured value is within the allowable range, it has been confirmed that the communication characteristic is appropriate, so that the semiconductor module manufacturing process is terminated without adjusting the capacity of the semiconductor module. If it is determined in step S2 that the measured impedance value is not within the allowable range, an appropriate capacitance value in the semiconductor module and an excess area of the capacitance pad are calculated from the measured value. (Procedure S3), a part of the capacity pads 7 and 13 corresponding to the excessive area is removed by trimming (procedure S4), and the semiconductor module manufacturing process is completed.
[0028]
Further, in the method of FIG. 7, after measuring the frequency characteristics of the IC chip (step S11) and calculating the capacitance of the antenna coil necessary to obtain the required impedance for the semiconductor module to which the IC chip is connected. (Procedure S12), the antenna coil and the IC chip are connected (procedure S13). Then, an appropriate capacitance value in the semiconductor module and an excess area of the capacitance pad are calculated from the calculated value, and a part of the capacitance pads 7 and 13 corresponding to the excess area is trimmed. It removes (procedure S14), the impedance of the obtained semiconductor module is measured (procedure S15), and it is determined whether the measured value is in an allowable range (procedure S16). If it is determined in step S16 that the measured value is within the allowable range, the manufacture of the semiconductor module is completed. If it is determined in step S16 that the measured value is not within the allowable range, it is discarded as a defective product. Is done.
[0029]
Further, in the method of FIG. 8, after measuring the frequency characteristics of the IC chip (step S21) and calculating the capacitance of the antenna coil necessary to obtain the required impedance for the semiconductor module to which the IC chip is connected. (Procedure S22) A proper capacitance value in the semiconductor module and an excess area of the capacitance pad are calculated from the calculated value, and a part of the capacitance pads 7 and 13 corresponding to the excess area Are removed by trimming (step S23). Next, the antenna coil and the IC chip are connected (procedure S24), the impedance of the obtained semiconductor module is measured (procedure S25), and it is determined whether or not the measured value is within the allowable range (procedure S26). ). If it is determined in step S26 that the measured value is within the allowable range, the manufacture of the semiconductor module is completed, and if it is determined in step S26 that the measured value is not within the allowable range, it is discarded as a defective product. Is done.
[0030]
【The invention's effect】
According to the semiconductor module manufacturing method of the present invention, a pair of capacitance pads are formed in advance on an insulating substrate on which a required circuit pattern including an antenna coil is formed and an IC chip is mounted, and variations in frequency characteristics of the IC chip occur. The impedance of the semiconductor module is adjusted within an allowable range by adjusting the area of the capacitor pad connected to the antenna coil in accordance with the frequency of the IC chip, regardless of whether the frequency characteristics of the IC chip vary or not. It is possible to stabilize the communication characteristics of the semiconductor module, which is a product, and thus the semiconductor device on which it is mounted.
[Brief description of the drawings]
FIG. 1 is a surface view of a semiconductor module according to an embodiment.
FIG. 2 is a front view and a back view of an insulating substrate applied to a semiconductor module according to an embodiment.
FIG. 3 is a surface view of an insulating substrate on which an IC chip is mounted.
FIG. 4 is a cross-sectional view of a principal part showing a connection state between a front surface pattern and a back surface pattern of an insulating substrate.
5 is a circuit diagram showing an equivalent circuit of the semiconductor module shown in FIG. 3;
FIG. 6 is a flowchart showing a first example of a semiconductor module manufacturing method.
FIG. 7 is a flowchart showing a second example of a semiconductor module manufacturing method.
FIG. 8 is a flowchart showing a third example of a semiconductor module manufacturing method.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor module 2 Insulating substrate 3 IC chip 4 Antenna coil 4a Spiral part 4b Extension part 5 Pad part 6 Lead 7 Capacitance pad 9,10 Measuring terminal 11,12 Bonding terminal 13 Capacitance pad 14,15 Bonding terminal 16 Lead 18 Connection lead 19 Through hole

Claims (1)

A method of manufacturing a semiconductor module by connecting input / output terminals of an IC chip to both ends of an antenna coil formed on an insulating substrate, wherein one capacitor is provided on the opposing surface of the front and back surfaces as the insulating substrate. a pair of capacitive pads for configuration form, and those with the capacity pads and the antenna coil is connected via a pre-read pattern using a frequency characteristic of the IC chip connected to the antenna coil In accordance with the method for reducing the area of the capacitor pad connected to the antenna coil and adjusting the impedance of the semiconductor module within an allowable range,
Prior to connecting the IC chip to the antenna coil, the frequency characteristic of the IC chip is measured, and the capacitance of the antenna coil necessary to obtain a required impedance for the semiconductor module to which the IC chip is connected is calculated. And
Obtain the area of the capacitance pad having the required capacitance from the calculated value, remove the excess of the capacitance pad,
Thereafter, the IC chip is connected to the antenna coil.

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