JP3019497B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JP3019497B2 JP3019497B2 JP3191643A JP19164391A JP3019497B2 JP 3019497 B2 JP3019497 B2 JP 3019497B2 JP 3191643 A JP3191643 A JP 3191643A JP 19164391 A JP19164391 A JP 19164391A JP 3019497 B2 JP3019497 B2 JP 3019497B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor pellet
- lead
- external lead
- tab tape
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/79—Apparatus for Tape Automated Bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Description
【０００１】[0001]
【産業上の利用分野】本発明は、多機能でコンパクト化
されたＩＣなどの半導体装置の構造、製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure and a manufacturing method of a semiconductor device such as an IC which is multifunctional and compact.
【０００２】[0002]
【従来の技術】近年、液晶ディスプレイ用ドライブＩＣ
などの多機能でコンパクト化された半導体装置の外部引
出用リードの数は、多機能化されるほど益々多くなり、
リードの幅とピッチは、コンパクト化の要求から益々小
さくなる傾向にある。この種の半導体装置の多機能化、
コンパクト化の要求は、半導体装置の内部配線にＴＡＢ
テープ（Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｎｄｉｎｇ
用テープ、以下タブテープという）やプリント基板など
を使用することで、ある程度満たされている。2. Description of the Related Art In recent years, drive ICs for liquid crystal displays have been developed.
The number of external leads for multifunctional and compact semiconductor devices has increased as the number of functions has increased.
Lead widths and pitches tend to become smaller and smaller due to demands for compactness. Multi-functionalization of this type of semiconductor device,
The demand for compactness is to use TAB for internal wiring of semiconductor devices.
Tape (Tape Automated Bending)
To some extent by using tapes for printing (hereinafter referred to as tab tapes) and printed circuit boards.
【０００３】上記タブテープを使用した半導体装置の概
略例を、図８および図９に示し、これを説明する。タブ
テープ（20）はＴＡＢ（Ｔａｐｅ Ａｕｔｏｍａｔｅｄ
Ｂｎｄｉｎｇ）と通称されているもので、例えば絶縁
フィルム（21）に銅箔のリード（22）を貼付したもので
ある。これの製造は、ポリイミドなどの絶縁フィルム
（21）に銅箔を貼付し、絶縁フィルム（21）の所望部分
をエッチングで除去して窓孔（23）を形成し、銅箔を所
望パターンにエッチングして多数のリード（22）を形成
することで行われる。リード（22）は窓孔（23）内に突
出るインナーリード部（22ａ）と、その反対側に突出す
るアウターリード部（22ｂ）を有する。タブテープ（2
0）の窓孔（23）に半導体ペレット（24）が配置され
る。半導体ペレット（24）は表面に複数の電極（25）を
有し、この電極（25）が対応するリード（22）のインナ
ーリード部（22ａ）の先端部に熱圧着で接続される。タ
ブテープ（20）のアウターリード部（22ｂ）が半導体ペ
レット（24）の電極（25）の外部引出リードとして使用
される。FIGS. 8 and 9 show schematic examples of a semiconductor device using the above-described tab tape, which will be described. Tab tape (20) is TAB (Tape Automated)
For example, a copper foil lead (22) is attached to an insulating film (21). To manufacture this, a copper foil is attached to an insulating film (21) such as polyimide, a desired portion of the insulating film (21) is removed by etching to form a window (23), and the copper foil is etched into a desired pattern. This is performed by forming a large number of leads (22). The lead (22) has an inner lead (22a) projecting into the window hole (23) and an outer lead (22b) projecting on the opposite side. Tab tape (2
The semiconductor pellet (24) is placed in the window (23) of (0). The semiconductor pellet (24) has a plurality of electrodes (25) on the surface, and the electrodes (25) are connected by thermocompression to the tips of the inner leads (22a) of the corresponding leads (22). The outer lead portion (22b) of the tab tape (20) is used as an external lead for the electrode (25) of the semiconductor pellet (24).
【０００４】上記プリント基板を使用した半導体装置の
概略例を、図10および図11に示す。これは多数の外部引
出用リード（30）とアイランド（31）をタイバー（32）
で連結一体化したリードフレーム（33）と、プリント基
板（34）を備える。プリント基板（34）は両面の配線パ
ターン（35）（36）をスルーホール接続したもので、こ
れはリードフレーム（33）のアイランド（31）上に絶縁
層（37）を介してマウントされる。プリント基板（34）
上に半導体ペレット（38）がマウントされる。半導体ペ
レット（38）の表面電極とプリント基板（34）の表面の
配線パターン（35）にワイヤ（39）がボンディングさ
れ、プリント基板（34）の表面の別の配線パターン（3
5）とリード（30）にワイヤ（39）がボンディングされ
る。ワイヤボンディング後、リードフレーム（33）が部
分的に樹脂モールドされてから、タイバー（32）が切断
除去される。FIGS. 10 and 11 show schematic examples of a semiconductor device using the above printed circuit board. It has a number of external withdrawal leads (30) and islands (31) with tie bars (32)
And a printed circuit board (34). The printed circuit board (34) is formed by connecting through-hole wiring patterns (35) and (36) on both sides, and is mounted on an island (31) of a lead frame (33) via an insulating layer (37). Printed circuit board (34)
The semiconductor pellet (38) is mounted thereon. The wire (39) is bonded to the surface electrode of the semiconductor pellet (38) and the wiring pattern (35) on the surface of the printed circuit board (34), and another wiring pattern (3
The wire (39) is bonded to 5) and the lead (30). After the wire bonding, the tie bar (32) is cut and removed after the lead frame (33) is partially resin-molded.
【０００５】[0005]
【発明が解決しようとする課題】図８および図９の半導
体装置は、タブテープが低コストで製作できる、タブテ
ープと半導体ペレットの接続が簡単迅速に行えるなどの
有利さを備える。しかし、リードの幅やピッチを小さく
して半導体ペレットの電極数を多くし、コンパクトにし
てより多機能化を図ることには限界がある。実際、この
種半導体装置の構造では、液晶ディスプレイ用ドライブ
ＩＣなどの数１００ピン構造の多機能ＩＣをコンパクト
に製作することはできない。The semiconductor device shown in FIGS. 8 and 9 has such advantages that the tab tape can be manufactured at low cost and the connection between the tab tape and the semiconductor pellet can be performed simply and quickly. However, there is a limit to reducing the width and pitch of the leads to increase the number of electrodes of the semiconductor pellet and to make the semiconductor compact more multifunctional. In fact, with this type of semiconductor device structure, it is not possible to manufacture a multifunctional IC having a structure of several hundred pins, such as a drive IC for a liquid crystal display, in a compact manner.
【０００６】また、図10および図11の半導体装置は、半
導体ペレットとリードをプリント基板を介して配線する
ため、コンパクトにして多機能化を進める上で有利であ
る。しかし、中継配線手段のプリント基板が構造複雑で
高コストであり、配線のためのワイヤボンディング回数
が多いなどの経済的、製作的に不利な問題が多く残され
ていた。Further, the semiconductor device shown in FIGS. 10 and 11 is advantageous in that the semiconductor pellet and the lead are wired via a printed circuit board, so that the semiconductor device is made compact and multifunctional. However, there are many economical and manufacturing disadvantages such as a printed circuit board as a relay wiring means having a complicated structure and high cost, and a large number of wire bondings for wiring.
【０００７】本発明は、かかる従来問題点に鑑みてなさ
れたもので、上記２種の半導体装置の長所を活かしたコ
ンパクトで多機能、高密度実装型の半導体装置を提供す
ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a compact, multifunctional, high-density semiconductor device utilizing the advantages of the above two types of semiconductor devices. .
【０００８】[0008]
【課題を解決するための手段】本発明は、両面それぞれ
に複数の電極を有する半導体ペレットと、中継配線手段
のタブテープと、リードフレーム等のリードである第
１、第２外部引出リードを構成要素とし、これらを次の
ように配線することで、上記目的を達成する。The present invention comprises a semiconductor pellet having a plurality of electrodes on both sides, a tab tape of a relay wiring means, and first and second external lead-out leads which are leads such as a lead frame. The above object is achieved by wiring these as follows.
【０００９】前記半導体ペレットの片面の電極にタブテ
ープのリードのインナーリード部を接続する。タブテー
プの周辺部に平行に配置された第１外部引出リードを、
タブテープのリードのアウターリード部に直接接続す
る。第１外部引出リードに隣接して並列配置された第２
外部引出リードを、半導体ペレットの他の片面の電極に
ワイヤなどの中継配線手段を介して接続する。The inner lead portion of the tab tape lead is connected to the electrode on one side of the semiconductor pellet. The first external lead, which is arranged parallel to the periphery of the tab tape,
Connect directly to the outer lead of the tab tape lead. The second external lead arranged in parallel adjacent to the first external lead
The external lead is connected to another electrode on one side of the semiconductor pellet via a relay wiring means such as a wire.
【００１０】[0010]
【作用】表裏両面に電極を有する半導体ペレットの片面
の電極を対応する第１外部引出リードにタブテープを介
して接続し、他の片面の電極を対応する第２外部引出リ
ードにワイヤなど中継配線手段を介して接続することに
より、半導体ペレットの電極数を増大させても、これの
外部引出リードとの配線がタブテープなどの低コスト材
料で、しかも工数少なく簡単な作業で実施できるように
なる。A semiconductor pellet having electrodes on both sides is connected to a corresponding first external lead via a tab tape, and the other electrode is connected to a corresponding second external lead by a relay wiring means such as a wire. Thus, even if the number of electrodes of the semiconductor pellet is increased, the wiring to the external lead leads can be implemented by a low-cost material such as a tab tape, with a small number of steps, and with a simple operation.
【００１１】[0011]
【実施例】以下、一実施例について、図１ないし図７を
参照して説明する。図１は製造途中の半導体装置の要部
の平面（表面）図、図２はその底面（裏面）図を示す。
同図に示される半導体装置は、ＩＣの半導体ペレット
（１）と、タブテープ（２）と、リードフレーム（５）
の要部である第１、第２外部引出リード（６）（７）の
構成要素を並列に配置し、配線して構成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment will be described below with reference to FIGS. FIG. 1 is a plan (front) view of a main part of a semiconductor device during manufacture, and FIG. 2 is a bottom (back) view thereof.
The semiconductor device shown in the figure includes a semiconductor pellet (1) of an IC, a tab tape (2), and a lead frame (5).
The components of the first and second external lead-outs (6) and (7), which are the main parts of the above, are arranged in parallel and wired.
【００１２】半導体ペレット（１）は、図４（イ）〜
（ハ）に示すように、表裏両面それぞれに複数の電極
（1a）（1b）を有する。表面電極（1a）はバンプ電極で
あり、裏面電極（1b）はフラット電極である。The semiconductor pellet (1) is shown in FIGS.
As shown in (c), a plurality of electrodes (1a) and (1b) are provided on each of the front and back surfaces. The front electrode (1a) is a bump electrode, and the back electrode (1b) is a flat electrode.
【００１３】タブテープ（２）は矩形枠状の絶縁フィル
ム（４）上に銅箔の複数のリード（３）を固定してい
る。リード（３）は、半導体ペレット（１）の表面電極
（1a）に対応する複数が並列に配置される。リード
（３）は、絶縁フィルム（４）の内方に延びるインナー
リード部（3a）と、絶縁フィルム（４）の外方に延びる
アウターリード部（3b）からなる。インナーリード部
（3a）の先端部が半導体ペレット（１）の対応する表面
電極（1a）に接続され、アウターリード部（3b）の先端
部がリードフレーム（５）の対応する第１外部引出リー
ド（６）に接続される。The tab tape (2) has a plurality of copper foil leads (3) fixed on a rectangular frame-shaped insulating film (4). A plurality of leads (3) corresponding to the surface electrodes (1a) of the semiconductor pellet (1) are arranged in parallel. The lead (3) includes an inner lead (3a) extending inward of the insulating film (4) and an outer lead (3b) extending outward of the insulating film (4). The tip of the inner lead (3a) is connected to the corresponding surface electrode (1a) of the semiconductor pellet (1), and the tip of the outer lead (3b) is the corresponding first external lead of the lead frame (5). Connected to (6).
【００１４】リードフレーム（５）は、第１外部引出リ
ード（６）と第２外部引出リード（７）をタイバー
（８）で連結一体化した金属板である。第１外部引出リ
ード（６）は、半導体ペレット（１）の表面電極（１
ａ）に対応する本数あり、第２外部引出リード（７）は
裏面電極（１ｂ）に対応する本数あり、第２外部引出リ
ード（７）が対応する裏面電極（１ｂ）に中継配線手段
（９）を介して接続される。図示の中継配線手段（９）
は、金線のボンディングワイヤである。第１外部引出リ
ード（６）と第２外部引出リード（７）の接続端部は、
図１に示すように半導体ペレット（１）に対してリード
（６）が近接し、リード（７）が離隔するように交互に
千鳥配列で配置される。The lead frame (5) is a metal plate in which a first external lead (6) and a second external lead (7) are connected and integrated with a tie bar (8). The first external lead (6) is connected to the surface electrode (1) of the semiconductor pellet (1).
a), the second external lead-outs (7) have the number corresponding to the back electrode (1b), and the second external lead-outs (7) are connected to the corresponding back electrode (1b) by the relay wiring means (9). ). Illustrated relay wiring means (9)
Is a gold wire bonding wire. The connection end of the first external lead (6) and the second external lead (7)
Lead to semiconductor pellet (1) as shown in FIG.
(6) are close to each other, and the leads (7) are alternately arranged in a staggered arrangement so as to be separated .
【００１５】半導体ペレット（１）と第１、第２外部引
出リード（６）（７）の配線は、図５ないし図７に示す
順で行われる。まず、図５に示すように、半導体ペレッ
ト（１）を治具（10）に位置決めして、半導体ペレット
（１）をタブテープ（２）の絶縁フィルム（４）の窓孔
（11）内に入れる。タブテープ（２）のリード（３）の
インナーリード部（3a）の裏面を半導体ペレット（１）
の対応する表面電極（1a）に当て、両者を熱圧着にて接
続する。次に、図６に示すように、半導体ペレット
（１）に接続されたタブテープ（２）のリード（３）の
アウターリード部（3b）の先端部をリードフレーム
（５）の第１外部引出リード（６）の接続端部に当て、
両者の接触部分を熱圧着接続する。図５の半導体ペレッ
ト（１）とタブテープ（２）の接続と、図６のタブテー
プ（２）とリードフレーム（５）の熱圧着接続は、１工
程で行うようにしてもよい。The wiring between the semiconductor pellet (1) and the first and second external lead-outs (6) and (7) is performed in the order shown in FIGS. First, as shown in FIG. 5, the semiconductor pellet (1) is positioned on the jig (10), and the semiconductor pellet (1) is put into the window hole (11) of the insulating film (4) of the tab tape (2). . A semiconductor pellet (1) is formed on the back surface of the inner lead portion (3a) of the lead (3) of the tab tape (2).
To the corresponding surface electrode (1a), and connect them by thermocompression bonding. Next, as shown in FIG. 6, the tip of the outer lead portion (3b) of the lead (3) of the tab tape (2) connected to the semiconductor pellet (1) is connected to the first external lead-out lead of the lead frame (5). (6) to the connection end,
The two contact portions are connected by thermocompression bonding. The connection between the semiconductor pellet (1) and the tab tape (2) in FIG. 5 and the thermocompression connection between the tab tape (2) and the lead frame (5) in FIG. 6 may be performed in one step.
【００１６】次に、図７に示すように、タブテープ
（２）に接続されたリードフレーム（５）をワイヤボン
デイング工程に送り、半導体ペレット（１）の裏面電極
（１ｂ）と、リードフレーム（５）の対応する第２外部
引出リード（７）の接続端部の裏面をワイヤ（９）で順
次に接続する。なお、図７に示す（１２）は、ワイヤボ
ンデイング用のキャピラリである。またワイヤボンディ
ング時には半導体ペレット（１）とリード（７）をブロ
ック（図示せず）に支持する必要があるが、外部引出リ
ード（６）、（７）は千鳥状に配列されているため、外
部引出リード（７）のボンデイング予定部をタブテープ
（２）が接続されたリード（６）の外方で確実に支持す
ることが出来る。このようなワイヤボンデイングは、半
導体ペレット（１）の裏面電極（１ｂ）だけに対して行
うので、そのボンディング回数は図１０の半導体装置の
場合に比べ大幅に少なく、従って作業性良く実施でき
る。Next, as shown in FIG. 7, the lead frame (5) connected to the tab tape (2) is sent to a wire bonding step, where the back electrode (1b) of the semiconductor pellet (1) and the lead frame (5) are connected. ), The back surfaces of the connection ends of the corresponding second external lead-out leads (7) are sequentially connected by wires (9). In addition, (12) shown in FIG. 7 is a capillary for wire bonding. Also wire bondy
At the time of polishing, the semiconductor pellet (1) and the lead (7) are blown.
Need to be supported by a
Since the cards (6) and (7) are arranged in a staggered pattern,
Tab tape for the part to be bonded of the part lead (7)
(2) Securely support outside the connected lead (6)
Rukoto can. Since such wire bonding is performed only on the back electrode (1b) of the semiconductor pellet (1), the number of times of bonding is significantly smaller than that in the case of the semiconductor device of FIG.
【００１７】ワイヤボンディングが完了すると、図１な
いし図３の鎖線に示すように、半導体ペレット（１）と
タブテープ（２）、およびタブテープ（２）とリードフ
レーム（５）の接続部を含む要部に樹脂モールドなどし
てパッケージ（13）を形成する。その後、リードフレー
ム（５）のタイバー（８）を切断除去し、第１外部引出
リード（６）と第２外部引出リード（７）を分離させて
コンパクト型半導体装置を得る。When the wire bonding is completed, as shown by the dashed lines in FIGS. 1 to 3, the essential parts including the connection between the semiconductor pellet (1) and the tab tape (2) and the connection between the tab tape (2) and the lead frame (5). Then, a package (13) is formed by resin molding or the like. Thereafter, the tie bar (8) of the lead frame (5) is cut and removed, and the first external lead (6) and the second external lead (7) are separated to obtain a compact semiconductor device.
【００１８】なお、本発明は上記実施例に限らず、例え
ば半導体ペレット（１）の裏面電極（1b）とリードフレ
ーム（５）の第２外部引出リード（７）を接続する中継
配線手段（９）は、上記タブテープ（２）と同様なタブ
テープであってもよい。また、第１外部引出リード
（６）と第２外部引出リード（７）にタブテープのリー
ドを適用することも可能である。The present invention is not limited to the above embodiment. For example, the relay wiring means (9) for connecting the back electrode (1b) of the semiconductor pellet (1) and the second external lead (7) of the lead frame (5). ) May be a tab tape similar to the tab tape (2). It is also possible to apply tab tape leads to the first external lead (6) and the second external lead (7).
【００１９】[0019]
【発明の効果】本発明によれば、表裏両面に電極を有す
る半導体ペレットの両面電極と、これに対応する外部引
出リードとをタブテープやワイヤの中継配線手段を介し
て接続することにより、コンパクトな形状を損なうこと
無く半導体ペレットの電極数を増大させて多機能化を図
ることが容易にでき、かつ、内部配線がタブテープで工
数少なく低コストで実施できる。その結果、コンパクト
で多機能な半導体装置が製作的、経済的有利に生産でき
る効果がある。According to the present invention, compactness is achieved by connecting the double-sided electrodes of the semiconductor pellet having electrodes on both front and back surfaces and the corresponding external lead-out leads via tab tapes or wire relay wiring means. The number of electrodes of the semiconductor pellet can be increased without losing the shape, multi-functionality can be easily achieved, and the internal wiring can be carried out at a low cost with a small number of steps using a tab tape. As a result, there is an effect that a compact and multifunctional semiconductor device can be produced in a manufacturing and economically advantageous manner.
【図１】本発明の一実施例を示す半導体装置の要部の平
面図FIG. 1 is a plan view of a main part of a semiconductor device according to an embodiment of the present invention.
【図２】図１の装置の底面図FIG. 2 is a bottom view of the apparatus of FIG.
【図３】図１のＡ−Ａ線に沿う断面図FIG. 3 is a sectional view taken along the line AA in FIG. 1;
【図４】図１装置における半導体ペレットを示し、図４
（イ）は平面図、図４（ロ）は底面図、図４（ハ）は正
面図FIG. 4 shows a semiconductor pellet in the apparatus of FIG. 1;
(B) is a plan view, (B) is a bottom view, and (C) is a front view.
【図５】図１装置の半導体ペレットとタブテープの接続
製造工程の要部正面図FIG. 5 is a front view of a main part of a process for manufacturing a connection between a semiconductor pellet and a tab tape in the apparatus of FIG. 1;
【図６】図１装置のタブテープと外部引出リードの接続
製造工程の要部正面図FIG. 6 is a front view of a main part of a manufacturing process for connecting the tab tape and the external lead of the apparatus of FIG. 1;
【図７】図１装置の半導体ペレットと外部引出リードの
接続製造工程の要部正面図FIG. 7 is a front view of a main part of a manufacturing process for connecting the semiconductor pellet and the external lead of the device of FIG. 1;
【図８】従来の半導体装置の要部の平面図FIG. 8 is a plan view of a main part of a conventional semiconductor device.
【図９】図８のＢ−Ｂ線に沿う断面図FIG. 9 is a sectional view taken along the line BB of FIG. 8;
【図10】他の従来の半導体装置の要部の平面図FIG. 10 is a plan view of a main part of another conventional semiconductor device.
【図11】図10のＣ−Ｃ線に沿う断面図11 is a sectional view taken along line CC of FIG. 10
１ 半導体ペレット 1a 電極 1b 電極 ２ タブテープ ３ リード ６ 第１外部引出リード ７ 第２外部引出リード ９ 中継配線手段（ワイヤ） Reference Signs List 1 semiconductor pellet 1a electrode 1b electrode 2 tab tape 3 lead 6 first external lead 7 second external lead 9 relay wiring means (wire)
Claims (2)
ペレットと、半導体ペレットの片面の電極に接続される
複数のリードを有するタブテープと、タブテープの周縁
部に平行に配置され、タブテープのリードに直接接続さ
れる第１の外部引出リードと、内端と半導体ペレットの
間隔が第１外部引出リードの内端と半導体ペレットの間
隔よりも大きく設定され、かつ第１外部引出リードと同
一平面で隣接し一体的に並列配置され、半導体ペレット
の他の片面の電極に中継配線手段を介して接続される第
２の外部引出リードとを備えて成る半導体装置。1. A semiconductor pellet having a plurality of electrodes on both sides thereof, a tab tape having a plurality of leads connected to electrodes on one side of the semiconductor pellet, and a tab tape arranged parallel to a peripheral portion of the tab tape and directly connected to the tab tape leads. The first external lead connected, the inner end and the semiconductor pellet
The distance between the inner end of the first external lead and the semiconductor pellet
Is set to be larger than the gap and is the same as the first external lead.
A semiconductor device comprising: a second external lead connected adjacent to one plane and integrally arranged in parallel, and connected to another electrode on one side of the semiconductor pellet via a relay wiring means.
ペレットと、その周辺に並列配置された外部引出リード
との接続方法であって、半導体ペレットの片面の電極と
内端を半導体ペレットに近接させた外部引出リードとを
タブテープ方式で接続し、半導体ペレットの他の片面の
電極と内端を半導体ペレットから離隔させた外部引出リ
ードとをワイヤボンディング方式で接続することを特徴
とする半導体装置の製造方法。2. A method for connecting a semiconductor pellet having a plurality of electrodes on both surfaces thereof to external lead-out leads arranged in parallel around the semiconductor pellet, the method comprising:
An external lead leads to close the inner end to the semiconductor pellet are connected by a tab tape system, and another external lead leads to one side of the electrode and the inner end is spaced apart from the semiconductor pellet of the semiconductor pellet can be connected by wire bonding A method for manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3191643A JP3019497B2 (en) | 1991-07-31 | 1991-07-31 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3191643A JP3019497B2 (en) | 1991-07-31 | 1991-07-31 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0536886A JPH0536886A (en) | 1993-02-12 |
| JP3019497B2 true JP3019497B2 (en) | 2000-03-13 |
Family
ID=16278071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3191643A Expired - Fee Related JP3019497B2 (en) | 1991-07-31 | 1991-07-31 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3019497B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3798220B2 (en) * | 2000-04-07 | 2006-07-19 | シャープ株式会社 | Semiconductor device and liquid crystal module using the same |
| US6838751B2 (en) * | 2002-03-06 | 2005-01-04 | Freescale Semiconductor Inc. | Multi-row leadframe |
-
1991
- 1991-07-31 JP JP3191643A patent/JP3019497B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0536886A (en) | 1993-02-12 |
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