JP3003423B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of bumps on electrodes of a semiconductor device for semiconductor mounting.

[0002]

2. Description of the Related Art In recent years, a TAB method and a flip chip method have been put to practical use as a mounting method of a multi-pin, narrow-pitch LSI. Each of these methods requires a bump (metal projection) on an electrode of a semiconductor element, and the method of forming the bump is an important technique. As the bump formation method,
Although a method of forming by a plating method at a wafer stage is generally used, the cost is high in terms of equipment costs and the like. In contrast to this method, there is a method in which a bump is formed on another substrate and the bump is transferred onto an electrode of a semiconductor element. Hereinafter, a method of forming a bump by this transfer will be described.

FIG. 4 is a process diagram showing a conventional method for forming a bump on a semiconductor device by transferring a metal projection formed on a glass substrate onto an electrode of the semiconductor device.

[0004] A conventional method for forming a bump on a semiconductor device will be described with reference to FIG. As shown in FIG. 4A, an insulating film 12 (mask portion) having an opening 11 is formed by a photoresist or the like on an insulating substrate 14 of glass or the like on which a conductive film 13 is deposited on the entire surface. Next, as shown in FIG. 4B, using the insulating film 12 as a mask, metal projections 5 of Au, Cu, or the like are formed in the openings 11 by electrolytic plating. Next, as shown in FIG. 4C, the insulating film 12 is removed, and an insulating substrate 14 is formed.

[0005] FIG. 4D to FIG.
4 (a) to 4 (c) show a method of forming metal projections on a semiconductor device using a conventional metal projection substrate 15 for transfer manufactured as shown in FIG.

First, as shown in FIG. 4D, the electrodes 2 of the semiconductor element 1 and the metal projections 3 on the transfer metal projection substrate 15 are aligned. Next, as shown in FIG. 4 (e), the electrode 2 and the metal protrusion 3 of the semiconductor element 1 are pressed and heated using a pressing jig 9, and a eutectic alloy is formed between the electrode 2 and the metal protrusion 3. Is formed to connect the electrode 2 and the metal protrusion 3. At this time,
Since the bonding strength between the metal protrusion 3 and the electrode 2 is larger than the adhesion between the metal protrusion 3 and the conductive film 13 on the insulating substrate 14, the metal protrusion 3 is transferred to the semiconductor element 1. Next, as shown in FIG. 4 (f), the semiconductor element having the metal protrusion 3 is left on the transfer metal protrusion substrate 15 by gently blowing N ₂ or the like from the fine hole of the pressing jig 9. Next, FIG.
As shown in (g), the semiconductor element having the metal projection is moved from the transfer metal projection substrate using the vacuum suction jig 7. Next, as shown in FIG. 4 (h), the semiconductor element 1 having the metal projections 3 is attached to the chip tray 1 using a vacuum suction jig 7.
Store in 5.

[0007]

However, in the above-described method, since the heated pressing jig directly contacts the semiconductor element, considerable heat is applied to the semiconductor element itself, so that the characteristics of the element are changed. However, there is a problem that a defect such as the occurrence of a defect is caused and the yield is reduced.

SUMMARY OF THE INVENTION In view of the above problems, the present invention provides sufficient heat to form a eutectic alloy between a metal projection on a substrate and an electrode of a semiconductor element without applying heat to the semiconductor element to change its characteristics. And a method for manufacturing a semiconductor device.

[0009]

In order to solve the above-mentioned problems, a method of manufacturing a semiconductor device according to the present invention comprises: aligning a metal projection formed on an insulating substrate with an electrode of a semiconductor element; Placing an element on the metal protrusion
Heating the semiconductor element and the insulating substrate,
Pressing a semiconductor element against the insulating substrate;
Electrode and the metal protrusion are joined together, and the temperature of the semiconductor element is
So that the temperature is lower than the temperature of the insulating substrate.
The body element and the insulating substrate are heated so that the metal protrusions
Transferring from the insulating substrate to the electrode of the semiconductor element
A method of manufacturing a semiconductor device comprising:
The step of transferring the protrusions to the electrodes of the semiconductor
Temperature of the semiconductor element to prevent the characteristics of the semiconductor element from changing.
Is the temperature of the connection surface between the electrode of the semiconductor element and the metal protrusion.
The semiconductor element and the insulating group
And heating the plate so that the metal protrusions are in front of the insulating substrate.
This is a step of transferring to the electrodes of the semiconductor element.

[0010]

According to the present invention, the temperature of the semiconductor element is lower than the temperature of the connection surface between the metal projection forming the eutectic alloy and the wiring electrode of the element when the metal projection is transferred to the semiconductor element by the above structure. In addition, it is possible to transfer the metal projections with high yield to the semiconductor element without a defect such as a change in the characteristics of the semiconductor element.

[0011]

A method for manufacturing a semiconductor device of an embodiment of EXAMPLES Hereinafter the present invention will be described with reference to the drawings.

FIG. 1 shows the steps of a method for manufacturing a semiconductor device according to a first embodiment of the present invention. In FIG. 1, 1 is a semiconductor element, 2 is a wiring electrode of the semiconductor element,
Reference numeral 3 denotes a metal protrusion, and reference numeral 4 denotes a bump-forming substrate on which a conductive film is formed by evaporation. 5 is the first heating tool, 6 is the second heating tool
A heating tool 7 is a vacuum jig for transporting chips.

First, as shown in FIG. 1A, the wiring electrodes 2 of the semiconductor element 1 and the metal projections 3 formed on the conductive film on the bump forming substrate 4 are aligned. Next (Fig. 1)
As described above, the wiring electrode 2 of the semiconductor element 1 is brought into contact with the metal protrusion 3 on the bump forming substrate 4. Next, the first heating tool 5 heated to about 300 ° C. for (c) of FIG. 1 is transferred from the semiconductor element 1 side to the second heating tool 6 heated to about 450 ° C. for the bump forming substrate 4. The metal element 3 on the bump forming substrate 4 is transferred to the wiring electrode 2 of the semiconductor element 1 by pressing and heating the semiconductor element 1 and the transfer substrate 3 so as to sandwich the semiconductor element 1 from the side. Next, for (d) of FIG. 1, N2 is ejected from the fine holes of the first heating tool, and the semiconductor element 1 to which the metal protrusions 3 have been transferred is left on the bump forming substrate 4. Next, as shown in (e) of FIG. 1, the semiconductor element 1 remaining on the bump forming substrate 4 is housed in a chip collet using a vacuum jig 7 for chip transportation.

As described above, the first heating tool having a low temperature is applied from the side of the semiconductor element 1 and the second heating tool having a high temperature is applied from the side of the bump forming substrate 4 so that the semiconductor element 1 has a high temperature. The highly reliable transfer of the metal protrusions 3 to the semiconductor element 1 can be performed without applying a temperature. In addition, by using two tools having high flatness and controlling the gap between the two tools with high accuracy, it is possible to suppress the variation in the height of the metal projections in the chip and after the transfer between the chips. .

FIG. 2 illustrates the effect of the first embodiment of the present invention. For example, as shown in FIG. 2, by applying pressure from a bump forming substrate side using a high-temperature jig, a transfer process can be performed such that the temperature of the bonding portion is higher than the temperature of the semiconductor element.

FIG. 3 is a sectional view showing steps of a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

In FIG. 3, reference numeral 8 denotes a heating stage;
Is a heating tool. Using FIG. 3, the second embodiment of the present invention will be described.
A method of manufacturing the semiconductor device according to the third embodiment will be described.

First, as shown in FIG.
The wiring electrode 2 of the semiconductor element 1 and the metal projection 3 on the bump forming substrate 4 fixed on a stage heated to about 4 degrees by vacuum are aligned. Next, as shown in (b) of FIG. 3, the metal protrusion on the bump forming substrate 4 is brought into contact with the wiring electrode of the semiconductor element 1. Next, as shown in (c) of FIG. 3, the metal projections 3 on the bump forming substrate 4 are pressed and heated from the bump forming substrate 4 side using a heating tool 9 heated to about 450 ° C. Is transferred to the wiring electrode 2 of the semiconductor element 1. Next, as shown in (d) of FIG. 3, when the pressing by the heating tool 9 is completed and the bump forming substrate and the pressing tool 9 are raised, the semiconductor element 1 on which the metal protrusions 3 are transferred is placed on the heating stage 8. Remains. Next, as shown in FIG. 3E, the semiconductor element 1 remaining on the heating stage 8 is housed in a chip collet by using a vacuum jig 7 for chip transportation.

As described above, by applying heat and pressure through the bump forming substrate 4, highly reliable transfer of the metal projections 3 to the semiconductor element 1 can be performed without applying a high temperature to the semiconductor element 1.

[0020]

As described above, according to the present invention, at the time of transfer, the temperature of the bump forming substrate is set higher than that of the semiconductor element, and the heat required for transfer is applied to the joint surface between the projecting electrode and the wiring electrode of the semiconductor element. , it is possible to transfer to the semiconductor element of the metal protrusions high yield without applying a temperature which gives the Hay harm to the semiconductor element.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a step in transferring a metal protrusion according to a first embodiment of the present invention.

FIG. 2 is a sectional view for explaining effects of the first embodiment of the present invention.

FIG. 3 is a cross-sectional view of a step in the transfer of a metal protrusion according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view of a step in the transfer of a conventional metal projection.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Wiring electrode of semiconductor element 3 Metal projection 4 Substrate for bump formation 5 First heating tool 6 Second heating tool 7 Vacuum jig

Claims (1)

(57) [Claims] 1. A aligning the electrodes of the metal projection and a semiconductor element formed on an insulating substrate, heating the steps of placing the semiconductor element on the metal protrusion, said semiconductor element and said insulating substrate Then, the semiconductor element is pressed against the insulating substrate, the electrode of the semiconductor element is bonded to the metal protrusion, and the semiconductor element and the metal element are connected such that the temperature of the semiconductor element is lower than the temperature of the insulating substrate. by heating the insulating substrate, rolling the metal protrusion from said insulating substrate said method of manufacturing a semiconductor semiconductors device that Na more and a step of transferring to the electrode of the element, the metal protrusion into the electrode of the semiconductor element
The step of copying is performed to prevent a change in the characteristics of the semiconductor element.
In order for the temperature of the semiconductor device to be
So that the temperature is lower than the temperature of the connection surface with the metal protrusion.
Heating the semiconductor element and the insulating substrate to form the metal
Transfer the protrusion from the insulating substrate to the electrode of the semiconductor element
Semiconductor device manufacturing method characterized by the following steps:
Law.