JP2797900B2 - Method of mounting semiconductor element having bump electrode - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of bumps on electrodes of a semiconductor device for semiconductor mounting.

[0002]

2. Description of the Related Art In recent years, a TAB method and a flip chip method have been put to practical use as a mounting method of a multi-pin, narrow-pitch LSI. Each of these methods requires a bump (metal projection) on an electrode of a semiconductor element, and the method of forming the bump is an important technique. As the bump formation method,
A method of forming by a plating method at a wafer stage is generally used, but equipment such as a vapor deposition apparatus and an etching apparatus is required according to each process, and the cost is high in terms of equipment costs and the like. In contrast to this method, there is a method in which a bump is formed on another substrate and the bump is transferred onto an electrode of a semiconductor element.

A method of forming a bump made of solder on another substrate and transferring the bump onto an electrode of a semiconductor element is disclosed in US Pat.
It is disclosed in Japanese Patent No. 21564. However, when a semiconductor element formed by transfer using solder as a bump is bonded to a circuit board by diffusion, when the temperature rises,
There is a problem that stress is generated in the bump due to a difference in expansion coefficient between the semiconductor element and the circuit board, and reliability is reduced. Therefore, a contact-type bonding instead of a diffusion-type bonding, which can maintain high reliability against a temperature rise, has been developed. As the material of the bump used when joining the semiconductor element and the circuit board by this contact type joining, a material that is chemically stable and hardly forms an oxide film is required.
At present, Au is mainly used as a material of the bump.

Hereinafter, a conventional method of forming a bump by transfer and a method of mounting a semiconductor device having a bump formed thereon will be described with reference to the drawings.

FIG. 7 shows an LSI separately from a metal projection substrate.
1 schematically shows a conventional mounting method of a semiconductor element having a projecting electrode for transporting an LSI chip by using a chip tray for storing the chip.

First, FIG. 7 (a) shows the alignment between the electrodes of the LSI chip and the Au bumps on the metal projection substrate.
FIG. 4 shows a process of placing an SI chip on a metal projection substrate. The metal projecting substrate 4 has an IT
A conductive film 2 such as O is formed, and the Au bump 5 is formed on the metal projection substrate 4 by electrolytic plating using a photoresist as a mask. The Au bumps 5 of the metal projection substrate 4 and the chip electrodes 7 of the LSI chip 9 supported by the vacuum collet 6 are aligned, and the LSI chip 9 is placed on the metal projection substrate 4.

Next, FIG. 7B shows a bonding step for transferring an Au bump on a metal projection substrate to an electrode of an LSI chip. The LSI chip 9 is pressed and heated by the pressing tool 8 to form an alloy of the chip electrode of the LSI chip 9 and the Au bump 5, and the chip electrode and the Au bump 5 are joined. FIG. 8 is a cross-sectional view showing a step of joining the electrodes of the LSI chip 9 and the Au bumps 5 on the metal projection substrate 4. At this time, the bonding strength between the Au bumps 5 and the chip electrodes 7 of the LSI chip 9 is set to be larger than the bonding strength between the Au bumps 5 and the metal projection substrate 4.

Next, FIG. 7C shows that the LSI chip on the metal projection substrate is sucked by a vacuum collet and the Au bump is
FIG. 3 shows a transfer step of transferring to an SI chip and a step of storing an LSI chip in a chip tray. The Au bumps 5 are transferred from the metal projecting substrate 4 to the chip electrodes 7 of the LSI chip 9 by attracting and lifting the LSI chip 9 on the metal projecting substrate 4 with the vacuum collet 6. Next, the LSI chip 9 is directly transported to the chip tray 12 and stored in the pocket 13.

Step (a) of aligning the electrodes of the LSI chip shown in FIG. 7 with the Au bumps on the metal projection substrate and placing the LSI chip on the metal projection substrate; Bonding step (b) for transferring the Au bump, transferring the Au bump to the LSI chip by adsorbing the LSI chip on the metal projection substrate by the vacuum collet, and storing the LSI chip in the chip tray ( By repeating each step c) for each LSI chip, the LSI chip 9 to which a plurality of Au bumps are transferred is stored in the chip tray 12.
Next, the chip tray containing the LSI chips to which the plurality of Au bumps have been transferred is transported.

FIG. 7D shows an adsorption step of adsorbing the LSI chip formed as described above and stored in the chip tray with a vacuum collet, and an LS on which the Au bump is transferred.
FIG. 3 shows a process of installing an I chip on a circuit board and a process of joining an LSI chip to a circuit board. The chip tray 12 containing the LSI chips 9 is conveyed and set on an XY table 14 on which the chip tray 12 is set.
Next, the LSI chip 9 having the Au bump 5 is sucked by the vacuum collet 11 and the pocket 1 of the chip tray 12 is sucked.
3 and placed on the conductor wiring 16 of the circuit board 15, the Au bump 5 of the LSI chip 9 is connected to the conductor wiring 16, and the LSI chip 9 is joined to the circuit board 15.

FIG. 9 shows a method of manufacturing the metal projection substrate 4 in FIG. As shown in FIG. 9A, a conductive film 2 is formed on the entire surface of an insulating substrate 1 such as glass by a vapor deposition method or the like.
Is formed, and an insulating film 3 is further formed on the conductive film 2,
Opening 1 at a position corresponding to the electrode of the semiconductor element to be transferred
7 is provided. At this time, the insulating substrate 1 is made of glass or quartz, and the conductive film 2 is made of Ti / Pt or IT.
O is used, and a resist or the like is used as the insulating film 3.

Next, as shown in FIG. 9B, using the conductive film 2 as an electrode, the Au bump 5 is brought into close contact with the opening 17 of the metal projection substrate 4 by electrolytic plating. In the present invention, this is referred to as bonding the Au bump to the metal projection substrate 4. By controlling the current density, the temperature, and the like during the electrolytic plating, the Au bumps 5 have internal stress. This is the LSI
In the bonding step (FIG. 7B) for transferring the Au bump on the metal projection substrate to the electrode of the chip 9, the bonding strength between the Au bump 5 and the chip electrode 7 of the LSI chip 9 is Au.
This is because it is necessary to reduce the bonding strength between the Au bump 5 and the metal projection substrate 4 so as to be larger than the bonding strength between the bump 5 and the metal projection substrate 4.

Further, as shown in FIG. 9C, the insulating film 3 is removed to obtain a metal projection substrate 4 having Au bumps 5.

FIG. 10 shows an LSI to which an Au bump has been transferred.
FIG. 3 is a cross-sectional view of a step of joining a chip to a circuit board. The method shown in FIG. 10A uses the circuit board 15 and the LS
The Au bump 5 and the conductor wiring 16 are pressed against each other by the curing shrinkage of the photocurable resin 18 formed between the I chips 9. The method shown in FIG. 10B is a method in which the Au bump 5 and the conductor wiring 16 are joined by thermocompression bonding. The method of joining the LSI chip 9 to the circuit board is not limited to these methods, and a TAB method or the like may be applied.

[0015]

However, in the above-mentioned conventional method of mounting a semiconductor device having a protruding electrode, the LS
In the process of installing the I chip 9 on the circuit board 14, the LSI
The displacement of the electrode 7 of the chip 9 and the circuit board 15 is corrected by 1
It is necessary to perform image recognition on each LSI chip. FIG. 11 is a cross-sectional view of a process of correcting the displacement between the LSI chip and the circuit board and installing the LSI chip on the circuit board.

A pocket 13 of the chip tray 12 installed on an XY table 14 on which the chip tray 12 is installed.
The LSI chip 9 accommodated in the device is sucked by the vacuum collet 11 and moved to a position above a circuit board 15 placed on an XY table 19 on which a circuit board is placed. At this time, the positional relationship between the transferred LSI chip 9 and the circuit board 15 to which the LSI chip 9 is bonded cannot be accurately grasped because the LSI chip moves in the pocket while the chip tray is being transferred. 9 and the center of the circuit board 15 are shifted (L). Here, in order to correct the displacement (L), the alignment camera 20 is inserted between the LSI chip 9 and the circuit board 15, and each position is image-recognized. After the correction of the displacement between the LSI chip 9 and the circuit board 15 based on the result of the image recognition is completed,
The SI chip 9 is set on the circuit board 15.

As shown in FIG. 11, the LSI chip 9 and the center of the circuit board 15 are misaligned using the image recognition using the alignment camera 20. 12 pockets 1
In order to move the chip tray 12 randomly during the transfer of the chip tray 12, the operation must be performed for each of the LSI chips 9. The misalignment correction step by image recognition requires 2 to 10 seconds per LSI chip, and a considerable amount of time must be spent in the misalignment correction step by image recognition in total.

In particular, when the LSI chip 9 is transferred to the chip tray 12 after the transfer of the Au bump 5, the Au bump 5
When the chip tray 12 on which the LSI chip 9 is placed is conveyed by dust,
When the I chip 9 moves, a stress is applied to a specific Au bump 5, and the Au bump 5 may be deformed.

FIGS. 12 (a) and 12 (b) are sectional views showing an LSI chip in which dust is attached to an Au bump and an LSI chip in which the Au bump has been deformed are mounted on a circuit board. As is apparent from this figure, when the dust 21 adheres to the Au bump 5 (FIG. 12A) or when the Au bump 5 is deformed (FIG. 12B), the circuit board 15
At the time of joining to the substrate, poor connection or disconnection occurs.

The present invention solves the above problems, and shortens the image recognition process for correcting the displacement between the electrode 7 of each LSI chip 9 and the circuit board 15 when the circuit board 15 is mounted on the circuit board 15. And the dirt such as the adhesion of dust 21 to the Au bump 5 after transfer by the transfer of the LSI chip 9;
Alternatively, it is an object of the present invention to provide a mounting method of a semiconductor element having a protruding electrode for preventing a connection failure or disconnection at the time of bonding to a circuit board based on deformation of the Au bump 5.

[0021]

In order to achieve the above object, a method of mounting a semiconductor device having metal projections according to the present invention comprises mounting a semiconductor device on a metal projection substrate to which a plurality of metal projections are fixedly attached. A first installation step of performing bonding and fixing the electrode of the semiconductor element and the metal projection by applying at least pressure, and adjusting the bonding strength between the metal projection and the electrode of the semiconductor element to the metal projection and the metal projection substrate. A first bonding step of making the bonding strength larger than the first bonding step, and transferring the metal projection substrate to which the plurality of semiconductor elements are bonded and fixed via the metal projections in the first bonding step. Removing the semiconductor element to which the metal projection is bonded from the metal projection substrate transported in the metal projection substrate transporting step, and transferring the projection electrode to the semiconductor element. A second installation step of installing the semiconductor element to which the bump electrode has been transferred on a circuit board, and a second bonding step of joining the semiconductor element to which the bump electrode has been transferred onto a circuit board. A method for mounting a semiconductor element having a protruding electrode comprising:

[0022]

According to the above structure, after the metal projection is formed on the semiconductor element, the semiconductor element is left on the metal projection substrate as it is,
Since the board can be used as a chip tray after completing the entire bonding process for transfer, the chip tray storage step and the step of correcting the misalignment between the metal protrusions and the conductor wiring when installing the semiconductor element on the circuit board Can be omitted, and furthermore, it is possible to prevent the metal projections from being stained or deformed due to element transport or storage in the chip tray.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for mounting a semiconductor device having a bump electrode according to an embodiment of the present invention will be described below with reference to the drawings.

(Example 1) FIG.
bonding to transfer the u bump to the LSI chip.
1 schematically shows a method of mounting a semiconductor device having a projecting electrode according to a first embodiment of the present invention in which an SI chip is mounted on a metal projecting substrate 4 and transported to the next step.

First, FIG. 1A shows the positioning of the electrodes of the LSI chip and the Au bumps on the metal projection substrate.
FIG. 4 shows a first installation step of installing an LSI chip on a metal projection substrate. Au bump 5 on metal projection substrate 4
The position of the LSI chip 9 supported by the vacuum collet 6 is aligned with the aluminum electrode 7 of the LSI chip 9, and the LSI chip 9 is placed on the metal projection substrate 4. The metal projection substrate 4 is manufactured by the conventional manufacturing method shown in FIG. 9, and the relative positional relationship of Au bump groups corresponding to individual LSI chips is controlled with high precision.

FIG. 1B shows a second bonding step for bonding Au bumps to the electrodes of the LSI chip. Pressing and heating are performed using the pressing tool 8 heated at about 400 ° C., and the Au bumps 5 on the metal projection substrate 4 and the L
An alloy is formed between the aluminum electrode 7 of the SI chip 9 and
The Au bump 5 and the aluminum electrode 7 are joined. At this time,
The bonding strength between the Au bump 5 and the aluminum electrode 7 is larger than the bonding strength between the Au bump 5 and the metal projection substrate 4.
After that, the LSI chip 9 having the Au bumps 5 is left on the metal projection substrate 4 by releasing the pressing by the pressing tool 8. As described above, the reason why the LSI chip 9 can be left as it is on the metal projection substrate 4 is that Au is used as a material for the bumps instead of melting solder at the time of the transfer bonding step. is there.

A first installation step (a) of aligning the electrodes of the LSI chip of FIG. 1 with Au bumps on the metal projection substrate, and mounting the LSI chip on the metal projection substrate,
By repeating the first bonding step (b) for bonding the electrodes of the SI chip and the Au bumps a plurality of times, a plurality of L
The SI chip 9 is set on the metal projection substrate 4. The metal projecting substrate 4 on which the plurality of LSI chips 9 are installed is transported to the next step as it is, thereby transporting the LSI chips 9. That is, the LSI chip 9 in which the first bonding step of bonding the electrode 7 and the Au bump 5 is completed is not housed in the chip tray as in the conventional mounting method of the semiconductor element having the bump electrode, and the metal bump substrate is used. 4 and transported.

Next, FIG. 1C shows a step of transferring the Au bump to the LSI chip, a second setting step of setting the LSI chip having the Au bump on the circuit board, and a step of transferring the LSI chip having the Au bump to the circuit board. 4 shows a second bonding step of bonding to a substrate. The metal projecting substrate 4 on which the plurality of LSI chips 9 are mounted is conveyed and set on an XY table 22 on which the metal projecting substrate 4 is set. Next, the LSI chip 9 placed on the metal projection substrate 4 is sucked by the vacuum collet 11 and lifted from above the metal projection substrate 4. At this time, the Au bump 5 is separated from the metal projection substrate 4 and
It is transferred to the aluminum electrode 7 of the chip 9. Further, the LSI chip 9 sucked by the vacuum collet 11 is placed on the circuit board 15 and joined.

FIG. 2 shows the Au bump LSI shown in FIG.
FIG. 9 is a cross-sectional view of a transfer step to a chip, a second installation step of installing an LSI chip having an Au bump on a circuit board, and a second bonding step of joining an LSI chip having an Au bump to a circuit board. FIGS. 7A and 7B respectively show a step of transferring an Au bump to the first and second LSI chips of the plurality of LSI chips on the metal bump substrate 4 which have been transported, and an Au bump. FIG. 9 shows a second installation step of installing an LSI chip on a circuit board.

In FIG. 2A, the first LSI chip 23 on the metal bump substrate 4 which has been transported is mounted in the same manner as the conventional method of mounting a semiconductor element having bump electrodes shown in FIG. The image of the position between the LSI chip 23 and the circuit board 15 is recognized by the
The displacement between the SI chip 23 and the circuit board 15 is corrected, and then the circuit board 15 is installed. In this embodiment, the image recognition is performed using the alignment camera. However, it is sufficient that the positional relationship between the LSI chip 23 and the circuit board 15 can be grasped from the image.

Next, in FIG. 2 (b), Au is transferred to the second LSI chip 24 on the metal bump substrate 4 which has been transported.
A description will be given of a bump transfer step and a second installation step of installing an LSI chip having an Au bump on a circuit board.

Without storing the LSI chip in the chip tray,
After the first joining, since the LSI chip is transported with the LSI chip mounted on the metal projection substrate, no displacement of the LSI chip occurs. Therefore, Au on the metal projection substrate 4
The relative positional relationship between the bump groups is precisely controlled during the production of the metal bump substrate, and the
The relative positional relationship of the I chips is also controlled with high precision. Therefore, when the bonding after the first LSI chip is mounted on the circuit board is completed, the second LSI chip 24
Is the movement of the distance of the vacuum collet P1, the XY table 2
2 is the movement of the distance P2, and the XY table 19 is only the movement of the distance P3, so that the LSI chip can be accurately set on the circuit board, and the misalignment correction step by image recognition using an alignment camera is omitted. it can. Also, the third and subsequent LSI chips can be mounted on the circuit board 15 by omitting the position shift correction step by image recognition using the alignment camera 20 as in the second LSI chip 24.

FIG. 3 shows the steps from the mounting of the LSI chip on the metal projection substrate to the joining of the LSI chip to the circuit board in the first embodiment of the present invention described above. In FIG. 3, (a) shows a process chart in a method for mounting a semiconductor element having a bump electrode according to the first embodiment of the present invention, and (b) shows a process chart in a conventional method for mounting a semiconductor element having a bump electrode. Things. As is clear from FIG. 3, the conventional process requires nine steps from the mounting of the LSI chip on the metal projection substrate to the bonding of the LSI chip to the circuit board, but the projection electrode of the first embodiment of the present invention is required. According to the semiconductor element mounting method having the above, only six processes are required for the second and subsequent LSI chips, and the number of processes can be reduced by three compared to the conventional process.

Specifically, a plurality of L on the metal projection substrate
With respect to the second and subsequent LSI chips of the SI chip, the mounting method of the semiconductor element having the bump electrodes of the first embodiment of the present invention uses the vacuum collet to mount the LSI chips on the metal bump substrate in comparison with the conventional method. A transfer step (3) of adsorbing and transferring the Au bump to an LSI chip;
By reducing the process of storing the chips in the tray (4), the position shift correction process (7) is performed for about 2 seconds per LSI chip by image recognition of the bumps of the LSI chips and the electrodes of the circuit board using an alignment camera. One L
The time can be reduced by about 2 to 10 seconds per SI chip, and when mass production of mounting semiconductor elements having bumps formed by the transfer method is considered, a remarkable time reduction can be achieved.

FIG. 4 shows a case where one metal projection substrate has 150
If one LSI chip can be installed,
This is an approximate calculation of the time required from mounting one LSI chip on a metal projection substrate to joining it to a circuit board.
The numbers in the process column in the figure correspond to the process numbers in FIG. As is clear from FIG. 4, the LSI chip can be mounted on the circuit board in 2265 seconds, which has conventionally required 3610 seconds.

Further, since the LSI chip 9 after the first bonding step with the Au bump 5 is not stored in the chip tray and transported, especially the chip tray 1 of the LSI chip 9
As shown in FIG. 12, there is no dust attached to the LSI chip 9 during storage in the LSI chip 2, and deformation of the Au bumps 5 does not occur.
In this case, problems such as poor connection and disconnection at the time of bonding to No. 5 hardly occur. Therefore, mounting with a very high yield can be performed.

However, in the case of the first embodiment,
Metal bump substrate 4 on which a plurality of LSI chips 9 are installed
Is transported to the next process as it is, and thus the LSI chip 9 is transported. Therefore, when the LSI chip 9 is extremely large, there is a possibility that a displacement may occur during the transport due to the own weight of the LSI chip 9. An LSI chip, which is much less than a method of manufacturing a semiconductor device having electrodes, but has a small amount of misalignment and an adjacent LSI chip
There is a possibility that the number of LSI chips that come into contact with the chips and cause displacement will increase.

(Embodiment 2) A method of mounting a semiconductor device having a projecting electrode according to a second embodiment in consideration of the prevention of displacement during the transfer of the metal projecting substrate will be described below.

FIG. 5 shows a method of fixing the metal projection substrate and the frame,
FIG. 6 shows a second embodiment of the present invention using a metal projection substrate having a frame.
9 schematically shows a method for mounting a semiconductor element having a bump electrode according to the embodiment.

As shown in FIG. 5A, a frame 26 having an opening 25 in the region where the Au bump 5 is formed on the metal projection substrate 4.
Prepare The frame body 26 is formed by forming an opening 25 by etching or punching a metal or plastic sheet having a thickness of about 50 μm to 200 μm.

Next, as shown in FIG. 5B, the frame 26 is placed and fixed on the metal projection substrate 4 so that the opening 25 and the formation region of the Au bump 5 coincide with each other. Fixing method is frame 2
The periphery of 6 is fixed with an adhesive 27.

The Au of the metal projection substrate formed as described above is used.
The method of transferring the bumps 5 to the LSI chip 9, transferring the bumps 5 to the next process while the LSI chip 9 is mounted on the metal projecting substrate 4, and bonding the bumps 5 to the circuit board 14 (FIG. 6) is described in the first method shown in FIG. This is the same as the embodiment.

When the metal bump substrate 4 is transported, the movement of the LSI chip 9 having the Au bumps 5 on the metal bump substrate 4 is restricted by the frame 26 formed in advance. , The influence on the adjacent LSI chip can be minimized.

[0044]

As is apparent from the above description, according to the present invention, the metal projection substrate for transfer is used as it is as a chip storage container after transfer, so that A
It is possible to reduce the number of steps for correcting the misalignment between the u-bump 5 and the circuit board 15 and to reduce the number of steps, and to prevent the adhesion of dust to the metal projections after the transfer and the deformation of the metal projections. Metal projections can be formed.

[Brief description of the drawings]

FIG. 1 is a perspective view showing steps from a step of mounting an LSI chip on a metal projection substrate to a step of connecting wiring of the LSI chip to a circuit board in the first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a step of transferring a bump to an LSI chip and a step of bonding a wiring of the LSI chip to a circuit board according to the first embodiment of the present invention.

FIG. 3 is a process chart of the first embodiment of the present invention and a conventional example.

FIG. 4 is a comparison diagram of time required for steps of the present invention and a conventional example.

FIG. 5 is a perspective view showing a method of fixing a frame to a metal projection substrate according to a second embodiment of the present invention.

FIG. 6 is a perspective view showing the steps from the step of mounting the LSI chip on the metal projection substrate to the step of connecting the LSI chip to the circuit board in the second embodiment of the present invention;

FIG. 7 is a perspective view showing a process from a process of mounting an LSI chip on a metal projection substrate to a process of connecting a wiring of the LSI chip to a circuit board in a conventional example.

FIG. 8 is a sectional view of a bonding step for bump transfer.

FIG. 9 is a sectional view showing a step of forming a metal projection substrate.

FIG. 10 is a cross-sectional view of a step of bonding a wiring of an LSI chip to a circuit board according to the present invention;

FIG. 11 is a cross-sectional view of a step of transferring a bump to an LSI chip and a step of bonding a wiring of the LSI chip to a circuit board in a conventional example.

FIG. 12 is a diagram showing occurrence of a defect in a conventional wiring bonding step;

[Explanation of symbols]

 Reference Signs List 1 Insulating substrate 2 Conductive film 3 Insulating film 4 Metal projection substrate 5 Au bump 6 Vacuum collet 7 LSI chip electrode 8 Press tool 9 LSI chip 10 Protective film 11 Vacuum collet 12 Chip tray 13 Pocket 14 X for placing chip tray -Y table 15 Circuit board 16 Conductor wiring 17 Opening of insulating film 18 Photocurable resin 19 XY table for installing circuit board 20 Alignment camera 21 Dust 22 XY table for installing metal projection board 23 LSI chip 24 LSI chip 25 Frame opening 26 Frame 27 Adhesive

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/60 311 H01L 21/92 604

Claims (5)

(57) [Claims] A first mounting step of mounting a semiconductor element on a metal projection substrate to which a plurality of metal projections are bonded and fixed, and at least applying pressure to bond and fix an electrode of the semiconductor element and the metal projection. A first bonding step of increasing a bonding strength between the metal protrusion and the electrode of the semiconductor element to a bonding strength between the metal protrusion and the metal protrusion substrate; and a plurality of the semiconductors in the first bonding step. A metal projection substrate transporting step of transporting the metal projection substrate to which an element is bonded and fixed via the metal projection, and the semiconductor in which the metal projection is bonded from the metal projection substrate transported in the metal projection substrate transporting step A metal projection transfer step of separating the element and transferring the metal projection to the semiconductor element; and a second step of placing the semiconductor element to which the metal projection has been transferred on a circuit board.
And a second joining step of joining the semiconductor element, onto which the metal projections have been transferred, to a circuit board. 2. A first installation step of installing a semiconductor element on a metal projection substrate to which a plurality of metal projections are bonded and fixed, and at least applying pressure to bond and fix an electrode of the semiconductor element and the metal projection. A first bonding step of increasing a bonding strength between the metal protrusion and the electrode of the semiconductor element to a bonding strength between the metal protrusion and the metal protrusion substrate; and a plurality of the semiconductors in the first bonding step. A metal projection substrate transporting step of transporting the metal projection substrate to which an element is bonded and fixed via the metal projection, and the semiconductor in which the metal projection is bonded from the metal projection substrate transported in the metal projection substrate transporting step A metal projection transfer step of separating the element and transferring the metal projection to the semiconductor element; and a second step of placing the semiconductor element to which the metal projection has been transferred on a circuit board.
And a second bonding step of bonding the semiconductor element to which the metal protrusions have been transferred onto a circuit board, wherein the semiconductor element is bonded and fixed to the metal protrusion substrate transported in the metal protrusion substrate transporting step. A specific one of the plurality of the semiconductor elements is subjected to image recognition for correcting a positional deviation from a circuit board to be installed during the second installation step, and A semiconductor element other than the specific one semiconductor element among the plurality of semiconductor elements bonded and fixed to the metal projection substrate transported in the transportation step, performs the second installation step on the metal projection substrate A method for mounting a semiconductor element having a protruding electrode, wherein the method is performed based on an accurate relative positional relationship between the plurality of semiconductor elements. 3. The mounting of a semiconductor device having bump electrodes according to claim 1, wherein the metal bump substrate has a frame surrounding each of the metal bump groups corresponding to the electrodes of one semiconductor device. Method. 4. The method according to claim 1, wherein the material of the metal projection is a metal that does not melt during the first bonding step. 5. The method according to claim 1, wherein the material of the metal projection is Au.