JPH0669283A - Method for mounting semiconductor device with protruding electrodes - Google Patents

Abstract

PURPOSE:To reduce the number of correcting steps for positional diviation of bumps from a circuit board by image recognition and to prevent adherence of dust to a metal protrusion after transferring, deformation of the protrusion by using a metal protrusion board for transferring as a chip containing vessel as it is after transferring. CONSTITUTION:The method for mounting a semiconductor element with protruding electrodes comprises the steps of mounting semiconductor devices 9 on a metal protruding board 4 having a plurality of metal protrusions 5 fixedly connected, fixedly connecting electrodes 7 of the devices 9 to the protrusions 5 at least by pressurizing, and increasing connecting strength of the protrusions 5 to the electrodes 7 of the device 9 larger than that of the protrusions 5 to the board 4. Then, the method comprises the steps of conveying the board 4 in which a plurality of the device 9 are fixedly connected through the protrusions 5, separating the devices 9 in which the protrusions 5 are connected from the board 4, and transferring the protrusions 5 to the devices 9. Then, the method comprises the steps of mounting the devices 9 in which the protrusions 5 are transferred on a circuit board 15, and connecting the devices 9 to the board 15.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to bump formation on electrodes of a semiconductor element for mounting semiconductors.

[0002]

2. Description of the Related Art In recent years, a TAB method and a flip chip method have been put into practical use as a mounting method for a multi-pin, narrow-pitch LSI. All of these methods require bumps (metal projections) on the electrodes of the semiconductor element, and the method of forming bumps is an important technique. As a bump forming method,
A method of forming by a plating method at the wafer stage is generally used, but an apparatus such as a vapor deposition apparatus or an etching apparatus is required for each process, and the cost is high in terms of equipment cost and the like. In contrast to this method, there is a method of forming bumps on another substrate and transferring the bumps onto the electrodes of the semiconductor element.

A method of forming bumps made of solder on another substrate and transferring the bumps onto the electrodes of a semiconductor element is USP36.
It is disclosed in Japanese Patent Publication No. 21564. However, when a semiconductor element formed by transfer using solder as a bump is bonded to a circuit board by diffusion, if the temperature rises,
There is a problem that stress is generated in the bumps due to the difference in expansion coefficient between the semiconductor element and the circuit board, and the reliability is reduced. Therefore, contact-type joining was developed instead of diffusion-based joining, which can maintain high reliability against temperature rise. The material of the bump used when joining the semiconductor element and the circuit board by this contact-type joining is required to be chemically stable and to prevent an oxide film from being formed,
Currently, Au is mainly used as the material for the bumps.

A conventional bump forming method by transfer and a semiconductor element mounting method in which bumps are formed will be described below with reference to the drawings.

FIG. 7 shows an LSI separately from the metal projection substrate.
1 is a schematic view of a conventional method of mounting a semiconductor element having a protruding electrode that carries an LSI chip by using a chip tray that houses a chip.

First, in FIG. 7A, the electrodes of the LSI chip are aligned with the Au bumps on the metal projection substrate, and L
It shows a process of installing the SI chip on the metal projection substrate. The metal projection substrate 4 is an IT on one side of the substrate such as glass.
A conductive film 2 such as O is formed, and the Au bumps 5 are formed on the metal projection substrate 4 by electrolytic plating using a photoresist as a mask. The Au bumps 5 of the metal projection substrate 4 and the chip electrodes 7 of the LSI chip 9 supported by the vacuum collet 6 are aligned, and the LSI chip 9 is placed on the metal projection substrate 4.

Next, FIG. 7B shows a bonding step for transferring the Au bumps on the metal projection substrate to the electrodes of the LSI chip. The pressure tool 8 pressurizes and heats the LSI chip 9 to form an alloy between the chip electrode of the LSI chip 9 and the Au bump 5, and the chip electrode and the Au bump 5 are bonded. FIG. 8 is a sectional view showing a step of joining the electrodes of the LSI chip 9 and the Au bumps 5 on the metal projection substrate 4. At this time, the bonding strength between the Au bump 5 and the chip electrode 7 of the LSI chip 9 is set to be higher than the bonding strength between the Au bump 5 and the metal projection substrate 4.

Next, as shown in FIG. 7 (c), the LSI chip on the metal projection substrate is sucked by the vacuum collet and the Au bump is set to L level.
The transfer process of transferring to the SI chip and the storing process of the LSI chip in the chip tray are shown. By sucking the LSI chip 9 on the metal projection substrate 4 with the vacuum collet 6 and pulling it up, the Au bumps 5 are transferred from the metal projection substrate 4 to the chip electrodes 7 of the LSI chip 9. Next, the LSI chip 9 is conveyed as it is to the chip tray 12 and stored in the pocket 13.

The step of aligning the electrodes of the LSI chip with the Au bumps on the metal projection substrate of FIG. 7 and placing the LSI chip on the metal projection substrate (a), on the metal projection substrate to the electrodes of the LSI chip Bonding step (b) for transferring the Au bumps, a transfer step of adsorbing the LSI chip on the metal projection substrate with a vacuum collet and transferring the Au bumps to the LSI chip, and a step of storing the LSI chip in a chip tray ( By repeating the steps c) for each LSI chip, the LSI chip 9 to which the plurality of Au bumps are transferred is housed in the chip tray 12.
Next, the chip tray in which the LSI chips to which the plurality of Au bumps have been transferred are stored is transported.

FIG. 7D shows a suction step of suctioning the LSI chip, which is formed as described above and stored in the chip tray, by the vacuum collet, and the LS to which the Au bump is transferred.
The process of installing the I chip on the circuit board and the process of joining the LSI chip to the circuit board are shown. The chip tray 12 accommodating the LSI chip 9 is conveyed and set on the XY table 14 on which the chip tray 12 is set.
Next, the LSI chip 9 having the Au bumps 5 is sucked by the vacuum collet 11 and the pocket 1 of the chip tray 12 is
3 is placed on the conductor wiring 16 of the circuit board 15, the Au bumps 5 of the LSI chip 9 and the conductor wiring 16 are connected, and the LSI chip 9 is bonded to the circuit board 15.

FIG. 9 shows a method for manufacturing the metal projection substrate 4 shown in FIG. As shown in FIG. 9A, the conductive film 2 is formed on the entire surface of the insulating substrate 1 such as glass by a vapor deposition method or the like.
And an insulating film 3 is further formed on the conductive film 2.
The opening 1 is provided at a position corresponding to the electrode of the semiconductor element to be transferred.
7 is provided. At this time, glass or quartz is used as the insulating substrate 1, and Ti / Pt or IT is used as the conductive film 2.
O is used, and a resist or the like is used as the insulating film 3.

Next, as shown in FIG. 9B, the Au bumps 5 are brought into close contact with the openings 17 of the metal projection substrate 4 by electrolytic plating using the conductive film 2 as an electrode. In the present invention, this is called joining of Au bumps to the metal projection substrate 4. The Au bumps 5 are given internal stress by controlling the current density, temperature, etc. during this electrolytic plating. This is the later LSI
During the bonding process (FIG. 7B) for transferring the Au bumps on the metal projection substrate to the electrodes of the chip 9, the bonding strength between the Au bumps 5 and the chip electrodes 7 of the LSI chip 9 is Au.
This is because it is necessary to reduce the bonding strength between the Au bumps 5 and the metal projection substrate 4 so as to be higher than the bonding strength between the bumps 5 and the metal projection substrate 4.

Further, as shown in FIG. 9C, the insulating film 3 is removed to obtain a metal projection substrate 4 having Au bumps 5.

FIG. 10 shows an LSI having Au bumps transferred thereon.
It is a sectional view showing a step of joining the chip to the circuit board. The method shown in FIG. 10A is applied to the circuit board 15 and the LS.
The Au bumps 5 and the conductor wirings 16 are pressed against each other by the curing shrinkage force of the photocurable resin 18 formed between the I chips 9. The method shown in FIG. 10B is a method of joining the Au bump 5 and the conductor wiring 16 by thermocompression bonding. The method of joining the LSI chip 9 to the circuit board is not limited to these methods, and the TAB method or the like may be applied.

[0015]

However, in the conventional method for mounting a semiconductor element having a bump electrode, the LS is not used.
During the process of installing the I-chip 9 on the circuit board 14, the LSI
The positional deviation between the electrode 7 of the chip 9 and the circuit board 15 is corrected to 1
It is necessary to perform image recognition for each LSI chip. FIG. 11 is a cross-sectional view of a process of correcting the positional deviation between the LSI chip and the circuit board and installing the LSI chip on the circuit board.

The pocket 13 of the chip tray 12 installed on the XY table 14 on which the chip tray 12 is installed.
The LSI chip 9 housed in the substrate is sucked by the vacuum collet 11 and moved to the circuit board 15 placed on the XY table 19 on which the circuit board is placed. At this time, the positional relationship between the conveyed LSI chip 9 and the circuit board 15 to which the LSI chip 9 is bonded cannot be accurately grasped because the LSI chip moves in the pocket during the conveyance of the chip tray, and therefore the LSI chip cannot be accurately grasped. A deviation (L) occurs between the center of 9 and the center of the circuit board 15. Here, in order to correct the deviation (L), the alignment camera 20 is inserted between the LSI chip 9 and the circuit board 15, and each position is subjected to image recognition. After the correction of the deviation between the LSI chip 9 and the circuit board 15 based on the result of this image recognition is completed, L
The SI chip 9 is installed on the circuit board 15.

In the process of correcting the positional deviation between the centers of the LSI chip 9 and the circuit board 15 using the image recognition using the alignment camera 20 as described above, as shown in FIG. 12 pockets 1
Since it moves randomly within the chip tray 12 during the transportation of the chip tray 12, it must be performed for each LSI chip 9. This misregistration correction process by image recognition requires a time of 2 to 10 seconds for one LSI chip, and a considerable amount of time must be spent in the misalignment correction process by image recognition in total.

Further, particularly when the LSI chip 9 is transferred to the chip tray 12 after the Au bump 5 is transferred, the Au bump 5
Dust is attached to the LS, or when the chip tray 12 on which the LSI chip 9 is mounted is conveyed, vibrations or the like cause LS.
When the I-chip 9 moves, the specific Au bump 5 is stressed at that time, and the Au bump 5 may be deformed.

FIGS. 12A and 12B are cross-sectional views showing an LSI chip in which dust is attached to the Au bump and an LSI chip in which the Au bump is deformed, which are mounted on a circuit board. As is clear from this figure, when the dust 21 is attached to the Au bumps 5 (FIG. 12A) or the Au bumps 5 are deformed (FIG. 12B), the circuit board 15
Poor connection or disconnection occurs when joining to.

The present invention solves the above problems and shortens the image recognition process for correcting the positional deviation between the electrode 7 of each LSI chip 9 and the circuit board 15 when the circuit board 15 is installed on the circuit board 15. And shortening the process, and dirt such as adhesion of dust 21 on the Au bumps 5 after transfer due to transfer of the LSI chip 9,
Another object of the present invention is to provide a method for mounting a semiconductor element having a protruding electrode that prevents a connection failure or disconnection at the time of joining to a circuit board due to deformation of the Au bump 5.

[0021]

In order to achieve the above object, a method for mounting a semiconductor device having metal protrusions according to the present invention is a semiconductor device mounted on a metal protrusion substrate to which a plurality of metal protrusions are bonded and fixed. And the metal protrusion is bonded to and fixed to the electrode of the semiconductor element by bonding the electrode of the semiconductor element and the electrode of the semiconductor element with each other. And a metal protrusion substrate transfer for conveying the metal protrusion substrate on which a plurality of the semiconductor elements are bonded and fixed via the metal protrusion in the first bonding process. And a step of removing the semiconductor element to which the metal projection is bonded from the metal projection substrate transported in the step of transporting the metal projection substrate, and transferring the projection electrode to the semiconductor element. A second mounting step of mounting the semiconductor element having the protruding electrodes transferred thereon on a circuit board, and a second bonding step of bonding the semiconductor element having the transferred protruding electrodes onto the circuit board. A method of mounting a semiconductor element having a protruding electrode including the above is used.

[0022]

With the above structure, after the metal projection is formed on the semiconductor element, the semiconductor element is left on the metal projection substrate as it is,
Since the board can be used as a chip tray after completing all the joining steps for transferring, the step of accommodating the misalignment between the metal projection and the conductor wiring when the chip tray is housed and the semiconductor element is installed on the circuit board. Can be omitted, and the metal protrusions can be prevented from being contaminated or deformed due to element transport or storage in the chip tray.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of mounting a semiconductor device having a bump electrode according to an embodiment of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 shows A on a metal projection substrate.
L is bonded to transfer the u bump to the LSI chip.
1 shows an outline of a method of mounting a semiconductor element having a protruding electrode according to a first embodiment of the present invention in which an SI chip is placed on a metal protruding substrate 4 and conveyed to the next step.

First, as shown in FIG. 1A, the electrodes of the LSI chip and the Au bumps on the metal projection substrate are aligned,
6 shows a first installation step of installing an LSI chip on a metal projection substrate. Au bump 5 on metal projection substrate 4
The aluminum electrode 7 of the LSI chip 9 supported by the vacuum collet 6 is aligned, and the LSI chip 9 is placed on the metal projection substrate 4. The metal projection substrate 4 is manufactured by the conventional manufacturing method shown in FIG. 9, and the relative positional relationship of the Au bump group corresponding to each LSI chip is accurately controlled.

Next, FIG. 1B shows a second joining step for joining the Au bumps to the electrodes of the LSI chip. Pressurization / heating is performed using the pressing tool 8 heated at about 400 ° C., and the Au bumps 5 and L on the metal projection substrate 4 are
An alloy is formed between the SI chip 9 and the aluminum electrode 7,
The Au bump 5 and the aluminum electrode 7 are joined. At this time,
The bonding strength between the Au bump 5 and the aluminum electrode 7 is larger than the bonding strength between the Au bump 5 and the metal projection substrate 4.
After that, the pressure applied by the pressure tool 8 is released to leave the LSI chip 9 having the Au bumps 5 on the metal projection substrate 4. As described above, the reason why the LSI chip 9 can be left as it is on the metal projection substrate 4 is that Au is used as the material of the bump instead of the solder that melts during the transfer bonding process. is there.

The first installation step (a) and L in which the electrodes of the LSI chip of FIG. 1 and the Au bumps on the metal projection substrate are aligned and the LSI chip is installed on the metal projection substrate.
By repeating the first bonding step (b) for bonding the electrodes of the SI chip and the Au bumps a plurality of times, a plurality of L
The SI chip 9 is placed on the metal projection substrate 4. The metal projection substrate 4 on which the plurality of LSI chips 9 are installed is directly transported to the next step, and thus the LSI chip 9 is transported. That is, the LSI chip 9 for which the first bonding step of bonding the electrode 7 and the Au bump 5 is completed is not housed in the chip tray unlike the conventional mounting method of a semiconductor element having a protruding electrode, and the metal protruding substrate is used. 4 is transported as it is installed.

Next, FIG. 1C shows a step of transferring the Au bumps to the LSI chip, a second setting step of setting the LSI chip having the Au bumps on the circuit board, and a circuit of the LSI chip having the Au bumps. It shows a second joining step of joining to a substrate. The metal protruding substrate 4 on which the plurality of LSI chips 9 are mounted is transported and placed on the XY table 22 on which the metal protruding substrate 4 is placed. Next, the LSI chip 9 placed on the metal projection substrate 4 is sucked by the vacuum collet 11 and lifted from the metal projection substrate 4. At this time, the Au bump 5 is peeled off from the metal projection substrate 4,
It is transferred to the aluminum electrode 7 of the chip 9. Further, the LSI chip 9 adsorbed by the vacuum collet 11 is placed on the circuit board 15 and bonded.

FIG. 2 is a schematic diagram of the Au bump LSI of FIG.
FIG. 6 is a cross-sectional view of a transfer step to a chip, a second installation step of installing an LSI chip having Au bumps on a circuit board, and a second bonding step of bonding an LSI chip having Au bumps to a circuit board, (a) and (b) have Au bump transfer process of transferring Au bumps to the first and second LSI chips of the plurality of LSI chips transferred on the metal protrusion substrate 4, respectively. 9 illustrates a second installation step of installing an LSI chip on a circuit board.

In FIG. 2A, the first LSI chip 23 on the metal projection substrate 4 that has been transported is the same as the conventional mounting method for a semiconductor element having a projection electrode shown in FIG. , By the image recognition of the position of the LSI chip 23 and the circuit board 15 by the alignment camera 20
The positional deviation between the SI chip 23 and the circuit board 15 is corrected, and then the SI chip 23 and the circuit board 15 are mounted on the circuit board 15. Although image recognition is performed using an alignment camera in the present embodiment, it is sufficient if the positional relationship between the LSI chip 23 and the circuit board 15 can be grasped from the image.

Next, as shown in FIG. 2B, Au is transferred to the second LSI chip 24 on the metal projection substrate 4 that has been conveyed.
A bump transfer process and a second installation process for installing an LSI chip having Au bumps on a circuit board will be described.

Without storing the LSI chip in the chip tray,
After the first bonding is performed, the LSI chip is conveyed while being mounted on the metal projection substrate, and therefore the LSI chip is not displaced. Therefore, Au on the metal projection substrate 4
The relative positional relationship of the bump groups is accurately controlled during the manufacture of the metal projection substrate, so that the LS on the Au bumps is controlled.
The relative positional relationship of the I chips is also controlled accurately. Therefore, when the joining after the installation of the first LSI chip on the circuit board is completed, the second LSI chip 24
Moves the distance of the vacuum collet P1, the XY table 2
2 is the movement of the distance P2, and the XY table 19 is only the movement of the distance P3, so that the LSI chip can be accurately installed on the circuit board, and the step of correcting the positional deviation by the image recognition using the alignment camera is omitted. it can. Further, with respect to the third and subsequent LSI chips, like the second LSI chip 24, the positional deviation correction process by image recognition using the alignment camera 20 can be omitted and installed on the circuit board 15.

FIG. 3 shows the steps from the installation of the LSI chip on the metal projection substrate to the bonding of the LSI chip to the circuit board in the first embodiment of the present invention described above. In FIG. 3, (a) is a process chart of a method for mounting a semiconductor element having a protruding electrode according to the first embodiment of the present invention, and (b) is a process chart of a conventional method for mounting a semiconductor element having a protruding electrode. It is a thing. As is apparent from FIG. 3, in the conventional process, nine steps are required from installation of the LSI chip on the metal projection substrate to wiring connection of the LSI chip to the circuit board. However, the projection electrode of the first embodiment of the present invention is required. According to the method of mounting a semiconductor element having the above-mentioned method, 6 steps are required for the second and subsequent LSI chips, and 3 steps can be reduced as compared with the conventional steps.

Specifically, a plurality of Ls on the metal projection substrate
With respect to the second and subsequent LSI chips of the SI chips, the semiconductor chip mounting method having the protruding electrodes of the first embodiment of the present invention uses an LSI chip on a metal protruding substrate by a vacuum collet as compared with the conventional method. A transfer process (3) of adsorbing and transferring Au bumps to an LSI chip, and
Due to the reduction of the step (4) of storing the chips in the tray, it takes about 2 seconds per LSI chip and the step (7) of correcting the positional deviation by the image recognition using the alignment camera of the bumps of the LSI chip and the electrodes of the circuit board. One L due to reduction
The time can be reduced to about 2 to 10 seconds per SI chip, and when considering mass production of mounting of semiconductor elements having bumps formed by the transfer method, a significant reduction in time can be achieved.

FIG. 4 shows that one metal projection substrate has 150
If one LSI chip can be installed, this 150
This is an approximate calculation of the time required from the mounting of the individual LSI chips on the metal projection substrate to the bonding to the circuit board.
The numbers in the step column in the figure match the step numbers in FIG. As is clear from FIG. 4, the LSI chip can be mounted on the circuit board in 2265 seconds, which conventionally took 3610 seconds.

Further, since the LSI chip 9 which has undergone the first bonding step with the Au bumps 5 is not stored in the chip tray and is not transported, the chip tray 1 of the LSI chip 9 is particularly used.
The dust does not adhere to the LSI chip 9 as shown in FIG. 12 which occurs when the LSI chip 9 is housed in the circuit board 2, and the Au bumps 5 are not deformed.
Problems such as connection failure and disconnection at the time of joining to No. 5 are less likely to occur. Therefore, mounting with a very high yield can be performed.

However, in the case of the first embodiment,
Metal protrusion board 4 on which a plurality of LSI chips 9 are installed
Is conveyed to the next step as it is, and the LSI chip 9 is conveyed thereby. Therefore, when the LSI chip 9 is very large, the weight of the LSI chip 9 may cause a positional deviation during the conveyance, which is a problem with the conventional projection. Although the number is much smaller than that of the method for manufacturing a semiconductor device having electrodes, some LSI chips are adjacent to each other and are misaligned.
There is a risk that the number of LSI chips that come into contact with the chips and cause a positional shift will increase.

(Embodiment 2) A method for mounting a semiconductor element having a protruding electrode according to a second embodiment of the present invention will be described below in consideration of prevention of displacement during the transportation of the metal protruding substrate.

FIG. 5 shows a method of fixing the metal projection substrate and the frame body,
FIG. 6 shows the second embodiment of the present invention using a metal projection substrate having a frame body.
3 is a schematic view showing a method of mounting a semiconductor element having a protruding electrode according to the embodiment of FIG.

As shown in FIG. 5A, a frame 26 having an opening 25 in the Au bump 5 forming region of the metal projection substrate 4.
To prepare. The frame 26 is formed by etching or punching a metal or plastic sheet having a thickness of about 50 μm to 200 μm to form the opening 25.

Next, as shown in FIG. 5B, the frame 26 is placed and fixed on the metal projection substrate 4 so that the openings 25 and the formation regions of the Au bumps 5 coincide with each other. Frame 2 is fixed
The periphery of 6 is fixed with an adhesive 27.

Au of the metal projection substrate formed as described above
Regarding the method (FIG. 6) of transferring the bumps 5 to the LSI chip 9 and carrying the LSI chip 9 to the next step with the LSI chip 9 installed on the metal projection substrate 4 and joining it to the circuit board 14, the first method shown in FIG. It is similar to the embodiment of.

When the metal projection substrate 4 is transported, the movement of the LSI chip 9 having the Au bumps 5 on the metal projection substrate 4 is restricted by the frame 26 formed in advance, so that if one LSI chip is displaced, Even if this occurs, the influence on the adjacent LSI chip can be suppressed to a minimum.

[0044]

As is apparent from the above description, according to the present invention, by using the metal projection substrate for transfer as a chip storage container as it is after transfer, the image recognition A
The steps such as reducing the number of steps for correcting the displacement between the u-bump 5 and the circuit board 15 can be shortened, and dust adhesion to the metal projections after transfer and deformation of the metal projections can be prevented, thereby improving the productivity of the semiconductor element. The metal protrusion can be formed.

[Brief description of drawings]

FIG. 1 is a perspective view showing a process from an installation process of an LSI chip to a metal protrusion substrate to a wiring connection process of an LSI chip to a circuit board in a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a bump transfer process to an LSI chip and a wiring bonding process of the LSI chip to a circuit board according to the first embodiment of the present invention.

FIG. 3 is a process diagram of the first embodiment of the present invention and a conventional example.

FIG. 4 is a comparison diagram of the time required for the steps of the present invention and the conventional example.

FIG. 5 is a perspective view showing a method of fixing a frame body to a metal projection substrate according to the second embodiment of the present invention.

FIG. 6 is a perspective view showing a process from a process of installing an LSI chip on a metal projection substrate to a process of connecting a wiring of an LSI chip to a circuit board in a second embodiment of the present invention.

FIG. 7 is a perspective view showing a process from a process of installing an LSI chip on a metal projection substrate to a process of connecting a wiring of an LSI chip to a circuit board in a conventional example.

FIG. 8 is a sectional view of a bump transfer bonding process.

FIG. 9 is a sectional view showing a process for forming a metal projection substrate.

FIG. 10 is a sectional view of a wiring joining process of the LSI chip of the present invention to a circuit board.

FIG. 11 is a cross-sectional view of a bump transfer process to an LSI chip and a wiring bonding process of the LSI chip to a circuit board in a conventional example.

FIG. 12 is a view showing a defect occurrence in a wiring joining process of a conventional example.

[Explanation of symbols]

 1 Insulating Substrate 2 Conductive Film 3 Insulating Film 4 Metal Protrusion Substrate 5 Au Bump 6 Vacuum Collet 7 LSI Chip Electrode 8 Pressurizing Tool 9 LSI Chip 10 Protective Film 11 Vacuum Collet 12 Chip Tray 13 Pocket 14 Installing Chip Tray X -Y table 15 Circuit board 16 Conductor wiring 17 Insulation film opening 18 Photo-curable resin 19 XY table for installing circuit board 20 Alignment camera 21 Dust 22 XY table for installing metal projection substrate 23 LSI chip 24 LSI chip 25 Opening of frame 26 Frame 27 Adhesive

Claims (5)

[Claims] 1. A first installation step of installing a semiconductor element on a metal projection substrate having a plurality of metal projections bonded and fixed, and at least applying pressure to bond and fix the electrodes of the semiconductor element and the metal projections. A first bonding step of making the bonding strength between the metal projection and the electrode of the semiconductor element larger than the bonding strength between the metal projection and the metal projection substrate; and a plurality of the semiconductors in the first bonding step. A metal projection substrate carrying step of carrying the metal projection substrate on which an element is joined and fixed via the metal projection, and the semiconductor having the metal projection joined from the metal projection substrate carried by the metal projection substrate carrying step A metal projection transferring step of peeling the element and transferring the metal projection to the semiconductor element; and a step of placing the semiconductor element having the metal projection transferred thereon on a circuit board.
And a second bonding step of bonding the semiconductor element on which the metal projection is transferred onto a circuit board, the method for mounting a semiconductor element having a protruding electrode. 2. A first installation step of installing a semiconductor element on a metal projection substrate having a plurality of metal projections bonded and fixed, and at least applying pressure to bond and fix the electrodes of the semiconductor element and the metal projections. A first bonding step of making the bonding strength between the metal projection and the electrode of the semiconductor element larger than the bonding strength between the metal projection and the metal projection substrate; and a plurality of the semiconductors in the first bonding step. A metal projection substrate carrying step of carrying the metal projection substrate on which an element is joined and fixed via the metal projection, and the semiconductor having the metal projection joined from the metal projection substrate carried by the metal projection substrate carrying step A metal projection transferring step of peeling the element and transferring the metal projection to the semiconductor element; and a step of placing the semiconductor element having the metal projection transferred thereon on a circuit board.
And a second joining step of joining the semiconductor element on which the metal protrusions are transferred onto a circuit board, wherein the semiconductor element is joined and fixed to the metal protrusion substrate conveyed by the metal protrusion substrate conveying step. A specific one semiconductor element of the plurality of semiconductor elements is subjected to positional deviation correction with the circuit board to be installed by image recognition in the second installation step, and the metal projection substrate A semiconductor device other than the specific one semiconductor device among the plurality of semiconductor devices bonded and fixed to the metal protrusion substrate transferred in the transfer process is subjected to the second installation process in the metal protrusion substrate. A method of mounting a semiconductor device having a protruding electrode, which is performed based on an accurate relative positional relationship of the plurality of semiconductor devices. 3. The mounting of a semiconductor element having a bump electrode according to claim 1, wherein the metal bump substrate has a frame body surrounding each metal bump group corresponding to an electrode of one semiconductor element. Method. 4. The method for mounting a semiconductor element having a bump electrode according to claim 1, 2 or 3, wherein the material of the metal projection is a metal that does not melt during the first bonding step. 5. The method of mounting a semiconductor element having a bump electrode according to claim 1, 2 or 3, wherein the material of the metal bump is Au.