JP2998379B2 - Conductive paste composition - Google Patents
Conductive paste compositionInfo
- Publication number
- JP2998379B2 JP2998379B2 JP35879991A JP35879991A JP2998379B2 JP 2998379 B2 JP2998379 B2 JP 2998379B2 JP 35879991 A JP35879991 A JP 35879991A JP 35879991 A JP35879991 A JP 35879991A JP 2998379 B2 JP2998379 B2 JP 2998379B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lower electrode
- conductive paste
- concentration
- paste composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Ceramic Products (AREA)
- Ceramic Capacitors (AREA)
- Conductive Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、導電ペースト組成物
に関し、詳しくは、ガラスフリットを含有する下層側電
極上に塗布、焼付けされて、半田濡れ性に優れた上層側
電極を形成する導電ペースト組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive paste composition, and more particularly, to a conductive paste which is applied and baked on a lower electrode containing glass frit to form an upper electrode having excellent solder wettability. Composition.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】例え
ば、セラミック電子部品素体上に電極（厚膜電極）を配
設してチップ型積層セラミックコンデンサなどのセラミ
ック電子部品を製造する場合、電極の半田濡れ性を向上
させるために、厚膜電極（同一組成で２層にすることも
ある）を下層側電極として、その上に、異なる組成を有
する上層側電極を形成する場合がある。2. Description of the Related Art For example, when a ceramic electronic component such as a chip-type multilayer ceramic capacitor is manufactured by disposing an electrode (thick film electrode) on a ceramic electronic component element body, In order to improve the solder wettability, a thick film electrode (in some cases, two layers with the same composition) is used as a lower electrode, and an upper electrode having a different composition may be formed thereon.
【０００３】そして、例えば、チップ型積層セラミック
コンデンサの場合、半田耐熱性を向上させるために、下
層側電極として固形分比で（すなわち、ＡｇとＰｄの合
量に対して）１０〜３０重量％のＰｄを含むＡｇペース
ト（ガラスフリットを含有する）を塗布、焼付けすると
ともに、半田濡れ性を向上させるために、上層側電極と
してＡｇペーストを焼付けすることにより電極を形成す
る技術が、特開昭５７−１４８３３１号公報、特開昭５
７−１４８３３３号公報に開示されている。For example, in the case of a chip-type multilayer ceramic capacitor, in order to improve solder heat resistance, the lower electrode has a solid content ratio of 10 to 30% by weight (that is, based on the total amount of Ag and Pd). In order to improve the solder wettability by applying and baking an Ag paste (containing a glass frit) containing Pd, a technique of forming an electrode by baking an Ag paste as an upper electrode is disclosed in 57-148331, JP-A-5
It is disclosed in JP-A-7-148333.
【０００４】しかし、上記従来の技術により形成された
電極においては、単に、下層側電極としてＡｇ−Ｐｄペ
ーストを塗布、焼付けした後、その上にＡｇペーストを
塗布、焼付けしているので、焼成中に下層側電極と上層
側電極との間のＰｄ濃度差により、両者の間でガラス、
Ａｇ、Ｐｄの相互拡散が生じ、下層側電極においては上
層側電極から拡散したＡｇにより焼結が促進され、下層
側電極中に含まれるガラスフリットが上層側電極の表面
にまで移動する（図３参照）。However, in the electrode formed by the above conventional technique, the Ag-Pd paste is simply applied and baked as the lower electrode, and then the Ag paste is applied and baked thereon, so Due to the difference in Pd concentration between the lower electrode and the upper electrode,
Ag and Pd are mutually diffused, and in the lower electrode, sintering is promoted by Ag diffused from the upper electrode, and the glass frit contained in the lower electrode moves to the surface of the upper electrode (FIG. 3). reference).
【０００５】その結果、半田濡れ性に優れた材料からな
る銀ペーストなどの導電ペーストを用いて上層側電極を
形成しても、下層側電極中のガラス成分が溶出して上層
側電極表面のガラス成分量を増加させるため、上層側電
極の半田濡れ性が低下し、実装工程における半田付けの
信頼性が低下するという問題点がある。As a result, even when the upper electrode is formed using a conductive paste such as a silver paste made of a material having excellent solder wettability, the glass component in the lower electrode is eluted and the glass on the surface of the upper electrode is removed. Since the amount of the components is increased, there is a problem that the solder wettability of the upper layer side electrode is reduced and the reliability of soldering in the mounting process is reduced.
【０００６】この発明は、上記問題点を解決するもので
あり、ガラスフリットを含有する下層側電極上に塗布、
焼付けすることにより、電極の半田濡れ性を向上させる
ことが可能な導電ペースト組成物を提供することを目的
とする。[0006] The present invention solves the above-mentioned problems, and is applied to a lower electrode containing glass frit.
An object of the present invention is to provide a conductive paste composition capable of improving solder wettability of an electrode by baking.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、発明者は種々の実験、検討を行い、Ｐｄを（例えば
５重量％）含有する導電ペースト組成物を、ガラスフリ
ットを含有するＡｇ−Ｐｄ系の下層側電極上に塗布、焼
付けした場合、下層側電極及び上層側電極のＰｄの濃度
分布が、図１に示すようにステップ状になることを知っ
た。このように、下層側電極と上層側電極においてＰｄ
の濃度差が保持されているということは、下層側電極と
上層側電極との間の相互拡散が抑制され、下層側電極か
ら上層側電極へのガラス成分の移動量も少ないことを意
味しており、上層側電極表面のガラス成分量が減少する
結果、上層側電極の半田濡れ性が向上する。発明者は上
記現象を見出し、さらに種々の実験、検討を行ってこの
発明を完成した。In order to achieve the above-mentioned object, the present inventors have conducted various experiments and studies, and have found that a conductive paste composition containing Pd (for example, 5% by weight) can be replaced with Ag containing glass frit. It has been found that when applied and baked on a Pd-based lower electrode, the Pd concentration distribution of the lower electrode and the upper electrode has a step shape as shown in FIG. As described above, the lower electrode and the upper electrode have Pd
That the concentration difference is maintained means that the interdiffusion between the lower electrode and the upper electrode is suppressed, and the amount of movement of the glass component from the lower electrode to the upper electrode is also small. As a result, the amount of glass component on the surface of the upper layer electrode is reduced, so that the solder wettability of the upper layer electrode is improved. The inventor has found the above phenomenon, and has further conducted various experiments and studies to complete the present invention.
【０００８】すなわち、この発明の導電ペースト組成物
は、ガラスフリットを含有し、ＡｇとＰｄの合量中のＰ
ｄ濃度が５〜３０重量％のＡｇ−Ｐｄ系の下層側電極上
に塗布されて半田濡れ性に優れた上層側電極を形成する
導電ペースト組成物であって、主成分であるＡｇと、該
Ａｇとの合量中の濃度が前記下層側電極の前記Ｐｄ濃度
の２５〜７５％の範囲にあるＰｄと、有機ビヒクルとを
含有し、ガラスフリットを含有しないことを特徴として
いる。[0008] That is, the conductive paste composition of the present invention contains glass frit and contains P in the total amount of Ag and Pd.
a conductive paste composition which is applied on an Ag-Pd-based lower electrode having a d concentration of 5 to 30% by weight to form an upper electrode having excellent solder wettability; It is characterized by containing Pd whose concentration in the combined amount with Ag is in the range of 25 to 75% of the Pd concentration of the lower electrode, and an organic vehicle, and not containing glass frit.
【０００９】[0009]
【作用】ガラスフリットを含有するＡｇ−Ｐｄ系の下層
側電極上に、Ａｇと、下層側電極中のＰｄ濃度の２５〜
７５％の濃度のＰｄと、有機ビヒクルとを含有し、ガラ
スフリットを含有しない導電ペースト組成物を塗布した
場合、下層側電極と上層側電極との間のガラス、Ａｇ、
Ｐｄなどの相互拡散が抑制され、上層側電極表面のガラ
ス成分量の増大を防止して半田濡れ性を向上させること
ができる。The Ag-Pd-based lower electrode containing glass frit is coated with Ag and a Pd concentration of 25 to 25% in the lower electrode.
When a conductive paste composition containing Pd at a concentration of 75% and an organic vehicle and not containing a glass frit is applied, glass, Ag, between the lower electrode and the upper electrode,
Interdiffusion of Pd or the like is suppressed, and an increase in the amount of glass components on the surface of the upper layer electrode can be prevented, so that solder wettability can be improved.
【００１０】[0010]
【実施例】以下、この発明の実施例を比較例とともに示
してその特徴をさらに詳しく説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the features of the present invention will be described in more detail with reference to Examples and Comparative Examples.
【００１１】ＭｇＴｉＯ3−ＣａＴｉＯ3系セラミック板
上に、Ａｇ粉末９０重量部、Ｐｄ粉末１０重量部、ガラ
スフリット３重量部を配合し、これに有機ビヒクルを適
量（例えば、導電ペースト組成物全量に対して１０〜３
０重量％）添加したＡｇ−Ｐｄペーストをスクリーン印
刷法により直径１０mmの円形状に塗布し、これを８５０
℃で焼成して下層側電極を形成した。なお、ガラスフリ
ットは、ＰｂＯ（４０重量％），Ｂｉ2Ｏ3（２０重量
％），ＳｉＯ2（２０重量％），Ｂ2Ｏ3（２０重量％）
からなるガラスを平均粒径５μmに粉砕したものであ
る。On a MgTiO 3 —CaTiO 3 ceramic plate, 90 parts by weight of Ag powder, 10 parts by weight of Pd powder and 3 parts by weight of glass frit are blended, and an appropriate amount of an organic vehicle (for example, based on the total amount of the conductive paste composition) 10-3
0% by weight), and the applied Ag-Pd paste was applied in a circular shape having a diameter of 10 mm by a screen printing method.
The resultant was baked at ℃ to form a lower electrode. The glass frit, PbO (40 wt%), Bi 2 O 3 ( 20 wt%), SiO 2 (20 wt%), B 2 O 3 ( 20 wt%)
Is crushed to an average particle size of 5 μm.
【００１２】そして、上記のように形成した下層側電極
上に、主成分であるＡｇと、前記下層側電極中のＰｄ濃
度（Ｐｄ／（Ａｇ＋Ｐｄ））に対して、表１に示すよう
な割合のＰｄ（例えば、表１のＰｄの割合が５０％の場
合、Ｐｄ濃度は１０×０．５＝５重量％となる。）と、
エチルセルロースをα−テレピネオールで溶解した有機
ビヒクルの適量（例えば、導電ペースト組成物全量に対
して１０〜３０重量％）とを含有するＡｇペーストを塗
布し、８００℃で焼成することにより上層側電極を形成
した。Then, on the lower electrode formed as described above, Ag as the main component and the Pd concentration (Pd / (Ag + Pd)) in the lower electrode as shown in Table 1 (For example, when the ratio of Pd in Table 1 is 50%, the Pd concentration is 10 × 0.5 = 5% by weight).
An Ag paste containing an appropriate amount of an organic vehicle in which ethyl cellulose is dissolved with α-terpineol (for example, 10 to 30% by weight based on the total amount of the conductive paste composition) is applied, and baked at 800 ° C. to form an upper electrode. Formed.
【００１３】[0013]
【表１】 [Table 1]
【００１４】表１において、実験番号に＊印を付したも
のは、この発明の範囲外の比較例についてのデータを示
している。In Table 1, the data marked with an asterisk (*) indicate the data of the comparative examples outside the scope of the present invention.
【００１５】この発明の実施例及び比較例の導電ペース
ト組成物を用いて形成した上記試料の半田濡れ性を調べ
た。その結果を表１に示す。The solder wettability of the samples formed using the conductive paste compositions of Examples and Comparative Examples of the present invention was examined. Table 1 shows the results.
【００１６】なお、表１における「半田濡れ性」は、Ｊ
ＩＳ Ｈ６２Ａｇ２Ａ（Ｓｎ６２％，Ｐｂ３６％，Ａｇ
２％）の半田を用いた２３０℃の半田浴に、Ｒタイプ
（ロジン系，無ハロゲン）フラックスを付着させて２秒
間浸漬した後の半田付着面積を測定することにより評価
した。すなわち、図２に示すように、上層側電極１の全
面積に対して、半田が付着した部分２の面積が９０％以
上の場合には良好（○）、７０〜９０％の場合には普通
（△）、７０％以下の場合には不可（×）と評価した。The "solder wettability" in Table 1 is defined by J
IS H62Ag2A (Sn 62%, Pb 36%, Ag
An R-type (rosin-based, halogen-free) flux was applied to a 230 ° C. solder bath using 2%) solder and immersed for 2 seconds. That is, as shown in FIG. 2, when the area of the portion 2 to which the solder is attached is 90% or more with respect to the entire area of the upper layer electrode 1, it is good (○). (△), when it was 70% or less, it was evaluated as impossible (x).
【００１７】表１に示すように、上層側電極用の導電ペ
ースト組成物のＰｄ濃度が、下層側電極のＰｄ濃度に対
して、２５〜７５％の範囲にある場合に良好な半田濡れ
性が得られ、上記範囲外の場合、例えば、Ｐｄを含んで
いない場合やＰｄの割合が下層側電極のＰｄ濃度と同じ
（すなわち、割合が１００％）になった場合には、半田
濡れ性が低下していることがわかる。As shown in Table 1, when the Pd concentration of the conductive paste composition for the upper electrode is in the range of 25 to 75% of the Pd concentration of the lower electrode, good solder wettability is obtained. If the Pd content is out of the above range, for example, if Pd is not contained, or if the ratio of Pd is the same as the Pd concentration of the lower electrode (that is, the ratio is 100%), the solder wettability is reduced. You can see that it is doing.
【００１８】なお、この発明の導電ペースト組成物を用
いて、上層側電極を形成したセラミック電子部品は、下
層側電極が良好な半田耐熱性を有するとともに、上層側
電極が半田濡れ性に優れているため、実装工程における
半田付け不良が減少し、実装の信頼性が向上する。In the ceramic electronic component in which the upper electrode is formed using the conductive paste composition of the present invention, the lower electrode has good solder heat resistance and the upper electrode has excellent solder wettability. Therefore, soldering defects in the mounting process are reduced, and the reliability of mounting is improved.
【００１９】また、上記実施例においては、下層側電極
が一層構造の場合について説明したが、この発明は、下
層側電極が２層以上の多層構造を有する電極である場合
にも適用することが可能である。In the above embodiment, the case where the lower electrode has a single-layer structure has been described. However, the present invention can be applied to a case where the lower electrode has a multilayer structure of two or more layers. It is possible.
【００２０】[0020]
【発明の効果】上述のように、この発明の導電ペースト
組成物は、主成分であるＡｇと、該Ａｇとの合量中の濃
度が下層側電極のＰｄ濃度の２５〜７５％の範囲にある
Ｐｄと、有機ビヒクルとを含有し、ガラスフリットを含
有しない構成を有しているので、下層側電極と上層側電
極との間のガラス、Ａｇ、Ｐｄなどの相互拡散を抑制し
て、上層側電極表面のガラス成分量の増大を防止し、半
田濡れ性を向上させることができる。As described above, in the conductive paste composition of the present invention, the concentration of Ag as the main component and the total amount of Ag is in the range of 25 to 75% of the Pd concentration of the lower electrode. Since it has a configuration containing a certain Pd and an organic vehicle and not containing a glass frit, it suppresses mutual diffusion of glass, Ag, Pd and the like between the lower electrode and the upper electrode, and An increase in the amount of glass components on the side electrode surface can be prevented, and the solder wettability can be improved.
【００２１】すなわち、この発明の導電ペースト組成物
は、焼成後の半田濡れ性に優れていることから、良好な
半田濡れ性が要求される表面実装型のセラミック電子部
品の電極形成用材料として極めて有意義である。That is, since the conductive paste composition of the present invention is excellent in solder wettability after firing, it is extremely useful as a material for forming electrodes of surface-mounted ceramic electronic components requiring good solder wettability. It is significant.
【図１】この発明の導電ペースト組成物を用いた場合
の、下層側電極と上層側電極のＰｄ濃度の分布を模式的
に示す図である。FIG. 1 is a diagram schematically showing the distribution of Pd concentration in a lower electrode and an upper electrode when a conductive paste composition of the present invention is used.
【図２】電極の半田濡れ性を説明する図である。FIG. 2 is a diagram illustrating solder wettability of an electrode.
【図３】従来の導電ペースト組成物を用いた場合の、下
層側電極と上層側電極のＰｄ濃度の分布を模式的に示す
図である。FIG. 3 is a diagram schematically showing a distribution of Pd concentration in a lower electrode and an upper electrode when a conventional conductive paste composition is used.
１ 上層側電極 ２ 半田が付着した部分 1 Upper layer electrode 2 Solder adhered part
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01B 1/00 - 1/24 H01G 1/147 H01G 4/12 H01G 4/30 H01G 13/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01B 1/00-1/24 H01G 1/147 H01G 4/12 H01G 4/30 H01G 13/00
Claims (1)
合量中のＰｄ濃度が５〜３０重量％のＡｇ−Ｐｄ系の下
層側電極上に塗布されて半田濡れ性に優れた上層側電極
を形成する導電ペースト組成物であって、主成分である
Ａｇと、該Ａｇとの合量中の濃度が前記下層側電極の前
記Ｐｄ濃度の２５〜７５％の範囲にあるＰｄと、有機ビ
ヒクルとを含有し、ガラスフリットを含有しないことを
特徴とする導電ペースト組成物。1. An upper electrode containing a glass frit and having a Pd concentration in the total amount of Ag and Pd of 5 to 30% by weight, which is coated on an Ag-Pd-based lower electrode and having excellent solder wettability. A conductive paste composition comprising: Ag as a main component; Pd whose concentration in the total amount of Ag is in the range of 25 to 75% of the Pd concentration of the lower electrode; and an organic vehicle. And a conductive paste composition containing no glass frit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35879991A JP2998379B2 (en) | 1991-12-28 | 1991-12-28 | Conductive paste composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35879991A JP2998379B2 (en) | 1991-12-28 | 1991-12-28 | Conductive paste composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05182514A JPH05182514A (en) | 1993-07-23 |
| JP2998379B2 true JP2998379B2 (en) | 2000-01-11 |
Family
ID=18461173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35879991A Expired - Lifetime JP2998379B2 (en) | 1991-12-28 | 1991-12-28 | Conductive paste composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2998379B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3571957B2 (en) * | 1999-03-30 | 2004-09-29 | 松下電器産業株式会社 | Conductive paste and method of manufacturing ceramic multilayer substrate |
| BR102013009357A2 (en) * | 2012-04-17 | 2015-06-23 | Heraeus Precious Metals North America Conshohocken Llc | Inorganic reaction system for an electroconductive paste, electroconductive paste composition, solar cell |
-
1991
- 1991-12-28 JP JP35879991A patent/JP2998379B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05182514A (en) | 1993-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI345245B (en) | Electronic component and method of manufacturing the same | |
| US4503090A (en) | Thick film resistor circuits | |
| JP2992570B2 (en) | Ceramic multilayer capacitor and method of manufacturing the same | |
| JP3018866B2 (en) | Base metal composition for external electrodes of laminated electronic components | |
| JP2998379B2 (en) | Conductive paste composition | |
| JP3115713B2 (en) | Ceramic electronic components | |
| JP4269795B2 (en) | Conductive paste and inductor | |
| JPS58178903A (en) | Conductive paste | |
| JPH037130B2 (en) | ||
| JPH08330173A (en) | Multilayer ceramic capacitor and its manufacture | |
| JP3291831B2 (en) | Conductive paste for chip-type electronic components | |
| JP2996016B2 (en) | External electrodes for chip-type electronic components | |
| JPH08236387A (en) | Surface-mounting electronic component and manufacture thereof | |
| JP3371749B2 (en) | Electronic component manufacturing method | |
| JP3760359B2 (en) | Conductive composition for semiconductor ceramic capacitor and semiconductor ceramic capacitor | |
| JPS58107605A (en) | Method of producing chip resistor | |
| JP2531023B2 (en) | Conductive paste | |
| JPH05144317A (en) | Conductive paste and chip type ceramic electronic parts having it used to form electrode | |
| JP2000260654A (en) | Ultra-small chip type electronic component | |
| JPH08306584A (en) | Electronic part with external electrode and circuit module | |
| JPH07105721A (en) | Manufacture of conductive paste | |
| JPS59124706A (en) | Conductive paste and ceramic electronic part | |
| JP2825327B2 (en) | Ceramic multilayer capacitor, terminal electrode paste and method of forming terminal electrode | |
| JP2709728B2 (en) | Porcelain electronic components | |
| JP2765237B2 (en) | Chip type thermistor and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19991005 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071105 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081105 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091105 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101105 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101105 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111105 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111105 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121105 Year of fee payment: 13 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121105 Year of fee payment: 13 |