JP2997371B2 - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JP2997371B2 JP2997371B2 JP4288965A JP28896592A JP2997371B2 JP 2997371 B2 JP2997371 B2 JP 2997371B2 JP 4288965 A JP4288965 A JP 4288965A JP 28896592 A JP28896592 A JP 28896592A JP 2997371 B2 JP2997371 B2 JP 2997371B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- circuit device
- integrated circuit
- barrier material
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、基板上にＣｕあるい
はＣｕ合金の配線を有する集積回路装置に関し、特に、
このＣｕ配線の活性な表面から周辺へのＣｕ拡散を防止
する技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit device having Cu or Cu alloy wiring on a substrate,
The present invention relates to a technique for preventing the diffusion of Cu from the active surface of the Cu wiring to the periphery.
【０００２】[0002]
【従来の技術】従来から一般に、例えば半導体等の集積
回路装置の配線材料として、Ａｌや、このＡｌの合金が
使用されているが、このＡｌを直接配線材料として用い
た場合、集積回路装置の集積度向上による配線幅の微細
化に伴って、配線や、その上下の絶縁層、保護層との間
の応力に起因するストレスマイグレーションによる配線
劣化・断線、あるいはエレクトロマイグレーション現象
による配線通電中の劣化、切断が発生していた。2. Description of the Related Art Conventionally, Al or an alloy of Al has been generally used as a wiring material of an integrated circuit device such as a semiconductor. With the miniaturization of the wiring width due to the improvement of the integration degree, wiring deterioration and disconnection due to stress migration caused by stress between the wiring and the insulating layer and protective layer above and below, or deterioration during wiring conduction due to electromigration phenomenon , Cutting had occurred.
【０００３】そこで、従来は、例えば特開昭５８−２０
２５５１号公報にＡｌ中にＣｕ等の元素を加えてこのＡ
ｌ自身の耐性を向上させる方法が示されており、また、
特開平２−１１９１４０号公報にはＡｌ合金に代えてＣ
ｕあるいはＣｕ合金を配線材料として用いることが示さ
れている。Therefore, conventionally, for example, Japanese Patent Application Laid-Open No. 58-20
No. 2551 discloses a method in which an element such as Cu is added to Al.
1 shows a method for improving the resistance of itself,
Japanese Patent Application Laid-Open No. 2-119140 discloses that C is used instead of Al alloy.
It is shown that u or Cu alloy is used as a wiring material.
【０００４】これは、ＣｕのほうがＡｌに比べて、より
低抵抗であることによりジュール発熱による温度上昇が
小さい上に伝送遅延時間も小さく、より高融点であるこ
とにより温度強度が高く、さらに、より原子量が大きい
ことによりエレクトロマイグレーションやストレスマイ
グレーションが起こりにくいことによる。[0004] This is because Cu has a lower resistance than Al, so that the temperature rise due to Joule heat is small, the transmission delay time is small, and the higher melting point, the temperature strength is higher. This is because electromigration and stress migration hardly occur due to the larger atomic weight.
【０００５】しかし、Ｃｕを配線材料として用いる場
合、Ｃｕ拡散によりこの配線周囲（例えばＳｉ基板や絶
縁膜としてのＳｉＯ2 ）を汚染し、正常な回路動作が妨
げられるので、このＣｕ拡散を防止すべく、バリア材料
として、例えば特開昭６３−７３６４５号公報にはＴｉ
Ｎ、ＴｉＷ、特開平１−１０６４３５号公報にはＺｒ、
Ｖ、Ｔａ、Ｎｂ、特開平１−２０２８４１号公報にはＭ
ｏ、Ｃｒ、Ｗ、等の各種材料が提案されている。However, when Cu is used as a wiring material, the diffusion of Cu contaminates the periphery of the wiring (for example, SiO 2 as an Si substrate or an insulating film) and hinders normal circuit operation. For example, as a barrier material, for example, JP-A-63-73645 discloses Ti
N, TiW, Zr,
V, Ta, Nb, and M
Various materials such as o, Cr, W, etc. have been proposed.
【０００６】[0006]
【発明が解決しようとする課題】従来の集積回路装置は
以上のように、基板上に形成する配線材料としてＣｕあ
るいはＣｕ合金を用いる場合、Ｃｕ拡散を防止すべく各
種バリア材料でこのＣｕ配線を被覆していたが、Ｃｕ原
子の原子半径が小さいためにすでに提案されているバリ
ア材料では十分なバリア性が確保できないなどの課題が
あった。As described above, in the conventional integrated circuit device, when Cu or a Cu alloy is used as a wiring material formed on a substrate, the Cu wiring is formed with various barrier materials to prevent Cu diffusion. Although it was covered, there was a problem that the barrier material already proposed could not secure sufficient barrier properties because the atomic radius of Cu atoms was small.
【０００７】また、最近の集積度の向上に伴う微細化に
対応するためには、ＰＶＤプロセスの適用には限界があ
るためＣＶＤプロセスの適用も可能であることが望まし
いが、多くの金属材料へのＣＶＤ技術の適用は困難であ
るなどの課題があった。Further, in order to cope with miniaturization accompanying the recent improvement in the degree of integration, there is a limit to the application of the PVD process, so it is desirable that the CVD process can be applied. There is a problem that the application of the CVD technique is difficult.
【０００８】この発明は上記のような課題を解決するた
めになされたもので、集積回路装置における基板上のＣ
ｕ配線表面から周辺へのＣｕ拡散を防止するバリア材料
及びその配線構造を得ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and has been made in consideration of the problem described above with reference to the accompanying drawings.
It is an object of the present invention to obtain a barrier material for preventing diffusion of Cu from the surface of the u wiring to the periphery and a wiring structure thereof.
【０００９】[0009]
【課題を解決するための手段】この発明に係る集積回路
装置は、基板上に形成するＣｕ配線表面の全面、あるい
は一部を固体炭素のバリア材料膜で被覆するように構成
しており、このバリア材料となる固体炭素としては、ダ
イヤモンド、黒鉛、アモルファス状炭素、又はダイヤモ
ンド状炭素などを用いる。The integrated circuit device according to the present invention is configured such that the entire surface or a part of the surface of a Cu wiring formed on a substrate is covered with a solid carbon barrier material film. As solid carbon to be a barrier material, diamond, graphite, amorphous carbon, diamond-like carbon, or the like is used.
【００１０】また、この固体炭素は水素原子を有する状
態（水素含有固体炭素）も含み、水素化アモルファス炭
素などを用いる。The solid carbon includes a state having hydrogen atoms (hydrogen-containing solid carbon), and hydrogenated amorphous carbon or the like is used.
【００１１】[0011]
【作用】この発明における集積回路装置は、Ｃｕ配線表
面の全面、あるいは一部をバリア材料で被覆するように
構成したので、基板上の平面配線のみならず、立体配線
の場合についてもＣｕ拡散の影響を防止することができ
る。In the integrated circuit device according to the present invention, the entire surface or a part of the surface of the Cu wiring is covered with a barrier material. The effect can be prevented.
【００１２】また、バリア材料として用いるダイヤモン
ド、黒鉛、アモルファス状炭素、ダイヤモンド状炭素、
又は水素化アモルファス炭素などの固体炭素は、従来の
バリア材料と比較して原子間の結合距離が短く、その構
造も緻密であるので、Ｃｕ拡散を防止しやすいという特
性がある（なお、その他にも化学的に安定なので耐湿性
等の保護性も優れている）。Further, diamond, graphite, amorphous carbon, diamond-like carbon,
Alternatively, solid carbon such as hydrogenated amorphous carbon has a characteristic that the bonding distance between atoms is shorter than that of a conventional barrier material and the structure thereof is dense, so that Cu diffusion can be easily prevented. Is also chemically stable and therefore has excellent protection properties such as moisture resistance.)
【００１３】具体的には、ダイヤモンドは最も結晶構造
が緻密であり、アモルファス状炭素、ダイヤモンド状炭
素、又は水素化アモルファス炭素などは結晶粒界がない
ために、粒界拡散も防止できる。また、黒鉛は伝導性を
有するために半導体基板（例えばシリコン基板）へのコ
ンタクト部のバリア材料として用いることができる。Specifically, diamond has the densest crystal structure, and amorphous carbon, diamond-like carbon, hydrogenated amorphous carbon, and the like have no crystal grain boundaries, so that grain boundary diffusion can also be prevented. Further, graphite can be used as a barrier material for a contact portion to a semiconductor substrate (for example, a silicon substrate) because it has conductivity.
【００１４】[0014]
【実施例】以下、この発明の一実施例を図１を用いて説
明する。なお、図中同一部分には同一符号を付して説明
を省略する。An embodiment of the present invention will be described below with reference to FIG. In the drawings, the same portions are denoted by the same reference numerals, and description thereof is omitted.
【００１５】図１は、この発明に係る集積回路装置の配
線形成過程を説明する断面図であり、まず、半導体基板
１であるＳｉ基板上にＰＳＧ等の絶縁膜２を形成し、そ
の表面にＲＦプラズマＣＶＤ等によって固体炭素のバリ
ア材料膜３を成長させる。FIG. 1 is a cross-sectional view for explaining a wiring forming process of an integrated circuit device according to the present invention. First, an insulating film 2 such as PSG is formed on a Si substrate which is a semiconductor substrate 1, and an insulating film 2 is formed on the surface thereof. The barrier material film 3 of solid carbon is grown by RF plasma CVD or the like.
【００１６】この固体炭素の堆積は、例えばダイヤモン
ド状炭素の場合、ＲＦプラズマＣＶＤにより、メタン１
０％、水素８０％、全圧１００ｍＴｏｒｒ、基板温度２
００℃の条件下で行う。また、ダイヤモンドの場合に
は、マイクロ波プラズマＣＶＤにより、メタン１％、水
素９９％、全圧４０Ｔｏｒｒ、基板温度７００℃の条件
下で行う。This solid carbon is deposited, for example, in the case of diamond-like carbon by RF plasma CVD using methane 1
0%, hydrogen 80%, total pressure 100mTorr, substrate temperature 2
It is performed under the condition of 00 ° C. In the case of diamond, microwave plasma CVD is performed under the conditions of methane 1%, hydrogen 99%, total pressure 40 Torr, and substrate temperature 700 ° C.
【００１７】続いて、その表面（バリア材料膜３の表
面）にＲＦマグネトロンスパッタリングによって配線材
料となる純Ｃｕ膜を成長させ、パターニングすることで
Ｃｕ配線４を形成する。Subsequently, a pure Cu film serving as a wiring material is grown on the surface (the surface of the barrier material film 3) by RF magnetron sputtering and patterned to form a Cu wiring 4.
【００１８】そして、このバリア材料膜３の側面と、Ｃ
ｕ配線４の表面（上部及び側面部）にもバリア材料膜５
を被覆させ、最後に、層間絶縁膜６を形成してＣｕ配線
構造を完成させる。Then, the side surface of the barrier material film 3 and C
Barrier material film 5 on the surface (upper and side surfaces) of u wiring 4
And finally, an interlayer insulating film 6 is formed to complete the Cu wiring structure.
【００１９】ここで、形成されたＣｕ配線４に対するバ
リア性を検証するため、一実施例としてシリコン基板状
に膜厚１０００Åのダイヤモンド状炭素を積層し、さら
に膜厚１μｍのＣｕを積層して８５０℃の水素雰囲気中
で３時間アニールを行った後、このＣｕとダイヤモンド
状炭素を部分的に除去して露出されたシリコンをＳｅｃ
ｃｏエッチ（このＳｅｃｃｏはＳｉのエッチング試薬と
して一般的なもので、ＳｅｃｃｏエッチはこのＳｅｃｃ
ｏ試薬によるエッチングのことをいう）を行い、シリコ
ン基板表面をＳＥＭ観察した。Here, in order to verify the barrier property to the formed Cu wiring 4, as one example, a diamond-like carbon film having a thickness of 1000 ° is laminated on a silicon substrate, and a Cu film having a thickness of 1 μm is further laminated to 850. After annealing in a hydrogen atmosphere at 3 ° C. for 3 hours, the Cu and diamond-like carbon are partially removed and the exposed silicon is removed by Sec.
co etch (Secco is a common etching reagent for Si, and Secco etch is
o), and the surface of the silicon substrate was observed by SEM.
【００２０】同様に、比較する従来技術としてはバリア
材料にＴｉＮを用いて試料を作成し、シリコン基板表面
をＳＥＭ観察した。Similarly, as a conventional technique to be compared, a sample was prepared using TiN as a barrier material, and the surface of the silicon substrate was observed by SEM.
【００２１】この結果、本発明ではＣｕの析出に起因す
る欠陥は確認できなかったのに対し、従来技術では０．
３個／μｍ2 の高い密度でエッチピットが検出された。As a result, in the present invention, no defect caused by the precipitation of Cu could be confirmed, whereas in the prior art, the defect was 0.1 mm.
Etch pits were detected at a high density of 3 / μm 2 .
【００２２】なお、この実施例では図１に示すような集
積回路装置について、その構造と製造プロセスを説明し
たが、特にこの構造に限定されるものではなく、例えば
コンタクトやヴィア等にＣｕが用いられる場合には、そ
の構造が変更されるのは言うまでもない。In this embodiment, the structure and the manufacturing process of the integrated circuit device as shown in FIG. 1 have been described. However, the present invention is not limited to this structure. For example, Cu is used for the contacts and vias. It goes without saying that the structure is changed when it is used.
【００２３】この実施例ではＣｕ配線４の表面全体を固
体炭素からなるバリア材料膜３、５で被覆したが、被覆
部位は特に限定されず、配線下地側のみであっても周辺
側のみであっても良い。In this embodiment, the entire surface of the Cu wiring 4 is coated with the barrier material films 3 and 5 made of solid carbon. However, the coating site is not particularly limited. May be.
【００２４】この場合、シリコン基板１へのコンタクト
部では、このシリコン基板と接する部分にＮｂ、Ｍｏ、
Ｔａ、Ｗ、ＴｉＮ等の伝導性を有するバリア材料を用い
ることもでき、また、この発明に係るバリア材料である
固体炭素に、黒鉛、硼素（Ｂ）等をドープすることで適
当な伝導性を持たせても良い。In this case, in the contact portion to the silicon substrate 1, Nb, Mo,
A barrier material having conductivity such as Ta, W, and TiN can be used, and a suitable conductivity can be obtained by doping graphite, boron (B), or the like into solid carbon, which is a barrier material according to the present invention. You may have it.
【００２５】また、この発明に係るバリア材料である固
体炭素（水素含有固体炭素を含む概念）の形成方法は特
に限定されず、公知の形成方法を用いることができる。
例えば特開昭５８−１１０４９４号公報に示されたよう
に、ダイヤモンド、ダイヤモンド状炭素、アモルファス
状炭素、水素化アモルファス炭素などは、いずれも炭化
水素と水素の混合物をプラズマ処理することで得られ、
また、スパッタ蒸着法、抵抗加熱蒸着法、電子ビーム蒸
着法、イオンビーム蒸着法等の物理気相蒸着法（ＰＶ
Ｄ）によっても蒸着できる。The method for forming solid carbon (concept including hydrogen-containing solid carbon) as a barrier material according to the present invention is not particularly limited, and a known forming method can be used.
For example, as shown in JP-A-58-110494, diamond, diamond-like carbon, amorphous carbon, hydrogenated amorphous carbon, etc. can be obtained by plasma-treating a mixture of hydrocarbon and hydrogen, and
In addition, physical vapor deposition (PV) such as sputter deposition, resistance heating deposition, electron beam deposition, and ion beam deposition.
D) can also be used for vapor deposition.
【００２６】[0026]
【発明の効果】以上のようにこの発明によれば、基板上
に形成するＣｕ配線表面の全面、あるいは一部を固体炭
素のバリア材料膜で被覆するように構成しており、この
バリア材料となる固体炭素として、ダイヤモンド、黒
鉛、アモルファス状炭素、又はダイヤモンド状炭素など
を用い、さらに水素含有固体炭素として水素化アモルフ
ァス炭素などを用いるようにしたので、Ｃｕ拡散を有効
に防止し、配線の信頼性を向上させるとともに、当該集
積回路装置の寿命・信頼性を向上させるなどの効果があ
る。As described above, according to the present invention, the entire surface or a part of the surface of the Cu wiring formed on the substrate is covered with the solid carbon barrier material film. Diamond, graphite, amorphous carbon, diamond-like carbon, etc., and hydrogenated amorphous carbon as the hydrogen-containing solid carbon are used as the solid carbon, thereby effectively preventing Cu diffusion and improving the reliability of wiring. This has the effect of improving the reliability and improving the life and reliability of the integrated circuit device.
【図１】この発明に係る集積回路装置の配線形成過程を
説明する断面図である。FIG. 1 is a cross-sectional view illustrating a wiring forming process of an integrated circuit device according to the present invention.
１…半導体基板、２…絶縁膜、３、５…バリア材料膜、
４…Ｃｕ配線、６…層間絶縁膜。DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Insulating film, 3,5 ... Barrier material film,
4 Cu wiring, 6 interlayer insulating film.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−350937（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/3205 H01L 21/768 H01L 21/28 ────────────────────────────────────────────────── (5) References JP-A-4-350937 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/3205 H01L 21/768 H01L 21 / 28
Claims (4)
において、 前記Ｃｕ配線表面の全面、あるいは該Ｃｕ配線表面の一
部を、バリア材料膜として固体炭素膜で被覆したことを
特徴とする集積回路装置。1. An integrated circuit device having a Cu wiring on a substrate, wherein the entire surface of the Cu wiring or a part of the surface of the Cu wiring is coated with a solid carbon film as a barrier material film. Circuit device.
であることを特徴とする請求項１記載の集積回路装置。2. The integrated circuit device according to claim 1, wherein said solid carbon film is a hydrogen-containing solid carbon film.
ンド、黒鉛、アモルファス状炭素、あるいはダイヤモン
ド状炭素からなることを特徴とする請求項１記載の集積
回路装置。3. The integrated circuit device according to claim 1, wherein the solid carbon film is made of at least diamond, graphite, amorphous carbon, or diamond-like carbon.
水素化アモルファス炭素からなることを特徴とする請求
項２記載の集積回路装置。4. The integrated circuit device according to claim 2, wherein said hydrogen-containing solid carbon film is made of at least hydrogenated amorphous carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4288965A JP2997371B2 (en) | 1992-10-27 | 1992-10-27 | Integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4288965A JP2997371B2 (en) | 1992-10-27 | 1992-10-27 | Integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06140401A JPH06140401A (en) | 1994-05-20 |
| JP2997371B2 true JP2997371B2 (en) | 2000-01-11 |
Family
ID=17737095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4288965A Expired - Lifetime JP2997371B2 (en) | 1992-10-27 | 1992-10-27 | Integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2997371B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100243286B1 (en) * | 1997-03-05 | 2000-03-02 | 윤종용 | Method for manufacturing a semiconductor device |
| JP3031301B2 (en) | 1997-06-25 | 2000-04-10 | 日本電気株式会社 | Copper wiring structure and method of manufacturing the same |
| KR101235135B1 (en) * | 2005-12-19 | 2013-02-20 | 삼성디스플레이 주식회사 | Metal line, method of manufacturing the same, display substrate having the same and method of manufacturing the display substrate |
| JP5154140B2 (en) * | 2006-12-28 | 2013-02-27 | 東京エレクトロン株式会社 | Semiconductor device and manufacturing method thereof |
| JP6241665B2 (en) * | 2014-05-19 | 2017-12-06 | サンケン電気株式会社 | Semiconductor device |
-
1992
- 1992-10-27 JP JP4288965A patent/JP2997371B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06140401A (en) | 1994-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR940010520B1 (en) | Semiconductor device and manufacturing method thereof | |
| US6057223A (en) | Passivated copper conductive layers for microelectronic applications | |
| JPH0470785B2 (en) | ||
| EP0526889B1 (en) | Method of depositing a metal or passivation fabric with high adhesion on an insulated semiconductor substrate | |
| JP2997371B2 (en) | Integrated circuit device | |
| KR20030020986A (en) | Sputtering target | |
| JPS6043858A (en) | Manufacture of semiconductor device | |
| JP3304541B2 (en) | Method of forming ohmic electrode | |
| WO1993013555A1 (en) | Semiconductor device | |
| US4380867A (en) | Method for making electrically conductive penetrations into thin films | |
| US5243221A (en) | Aluminum metallization doped with iron and copper to prevent electromigration | |
| JPH03148131A (en) | Semiconductor element and its manufacture | |
| JPH0629468A (en) | Manufacture of thin-film resistance | |
| US4954852A (en) | Sputtered metallic silicide gate for GaAs integrated circuits | |
| JPS6364057B2 (en) | ||
| JPH0284719A (en) | Manufacture of semiconductor device | |
| JPH0629294A (en) | Manufacture of semiconductor device | |
| JPH02235372A (en) | Semiconductor device and its manufacture | |
| JPH05102148A (en) | Semiconductor device | |
| JPH06275620A (en) | Wiring structure of semiconductor integrated circuit | |
| JPH0513368A (en) | Manufacture of semiconductor device | |
| JPH03153024A (en) | Semiconductor device and its manufacture | |
| JP2964185B2 (en) | Method for forming semiconductor device | |
| JP3062514B2 (en) | Thin film transistor | |
| JPS61196554A (en) | Semiconductor integrated circuit device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081029 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081029 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091029 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091029 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101029 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111029 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121029 Year of fee payment: 13 |
|
| EXPY | Cancellation because of completion of term |