JP2994911B2 - Screening method for ceramic electronic components - Google Patents
Screening method for ceramic electronic componentsInfo
- Publication number
- JP2994911B2 JP2994911B2 JP5150302A JP15030293A JP2994911B2 JP 2994911 B2 JP2994911 B2 JP 2994911B2 JP 5150302 A JP5150302 A JP 5150302A JP 15030293 A JP15030293 A JP 15030293A JP 2994911 B2 JP2994911 B2 JP 2994911B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic electronic
- screening
- electronic component
- current
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 24
- 238000012216 screening Methods 0.000 title claims description 23
- 230000002159 abnormal effect Effects 0.000 claims description 17
- 230000002950 deficient Effects 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000003985 ceramic capacitor Substances 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 238000009413 insulation Methods 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011800 void material Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミック電子部品の
スクリーニング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for screening ceramic electronic components.
【０００２】[0002]
【従来の技術】従来の技術について、積層セラミックコ
ンデンサのスクリーニング方法を例にとって説明する。2. Description of the Related Art A conventional technique will be described with reference to a method of screening a multilayer ceramic capacitor as an example.
【０００３】昨今、電子機器の小型化、高性能化にとも
なって積層チップコンデンサは小型化、大容量化への要
望がますます増大している。[0003] In recent years, with the miniaturization and high performance of electronic devices, demands for miniaturization and large capacity of multilayer chip capacitors are increasing more and more.
【０００４】従来、積層セラミックコンデンサの電圧印
加状態で絶縁抵抗が劣化する試料のスクリーニングは、
次のようなステップで行われている。Conventionally, screening of a sample in which insulation resistance is degraded when a voltage is applied to a multilayer ceramic capacitor is performed by:
The following steps are performed.
【０００５】まず積層セラミックコンデンサをキューリ
ー点以上の温度に保った恒温槽中に保持し、積層セラミ
ックコンデンサの外部電極からフッソ樹脂の外皮を施し
た導線を介して、恒温槽の外にあるスキャニングスイッ
チに接続する。次に直流電流計を内蔵したデジタル抵抗
計を接続する。その後、積層セラミックコンデンサに直
流電圧を印加する。直流電圧は、４Ｖ、８Ｖ、１６Ｖ、
３２Ｖ、６４Ｖの５種類印加し、印加してからある測定
時間（ｔ）までの絶縁抵抗（ＩＲ）の変化を記録する。
測定条件は、 １）測定時間＝０．１乃至３２秒 ２）測定時間比（測定間隔）＝１．４以上 ３）電界強度＝０．１乃至６Ｖ／μｍ ４）電界強度比＝１．４以上 である。このようにして測定した結果の各直流電圧につ
いてLog IR -Log t の関係で整理する。このとき、電界
が増すに従って、絶縁抵抗の対数の経過時間の対数に対
する変化率が変化しない又は増大するロットや、あるい
は減少するロットが発生する。前者については、寿命の
平均値が著しく短く、後者については長い。このことを
利用し、ロット間の信頼性を保証している（特開平４−
３２４６０８）。[0005] First, the multilayer ceramic capacitor is held in a thermostat maintained at a temperature equal to or higher than the Curie point, and a scanning switch outside the thermostat is connected to the external electrodes of the multilayer ceramic capacitor through a conductive wire covered with a fluorine resin. Connect to Next, a digital resistance meter with a built-in DC ammeter is connected. Thereafter, a DC voltage is applied to the multilayer ceramic capacitor. DC voltage is 4V, 8V, 16V,
Five types of voltages of 32 V and 64 V are applied, and changes in insulation resistance (IR) from application to a certain measurement time (t) are recorded.
The measurement conditions are: 1) measurement time = 0.1 to 32 seconds 2) measurement time ratio (measurement interval) = 1.4 or more 3) electric field intensity = 0.1 to 6 V / μm 4) electric field intensity ratio = 1.4 That is all. Each DC voltage obtained as a result of the measurement is arranged in a relation of Log IR-Log t. At this time, as the electric field increases, a lot occurs in which the rate of change of the log of the insulation resistance with respect to the log of the elapsed time does not change or increases, or a lot decreases. For the former, the average value of the life is extremely short, and for the latter, it is long. Utilizing this, the reliability between lots is guaranteed (Japanese Unexamined Patent Publication No.
324608).
【０００６】また、個々の積層セラミックコンデンサの
信頼性を保証する方法としては、出荷前に個々について
絶縁抵抗を測定し、ある設定値以下の絶縁抵抗有するも
のを取り除くことにより保証している。As a method for guaranteeing the reliability of each multilayer ceramic capacitor, the insulation resistance is measured for each of the capacitors before shipment, and those having an insulation resistance of a certain set value or less are removed.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記の
各方法では、依然積層セラミックコンデンサの信頼性に
問題があり、又、スクリーニング時間がかかり、作業効
率が悪いばかりでなく、スクリーニング精度も悪いとい
った課題を有している。However, in each of the above-described methods, there still remains a problem in the reliability of the multilayer ceramic capacitor, and it takes a long time to perform screening, not only low working efficiency but also poor screening accuracy. have.
【０００８】そこで本発明は、上記従来の課題を考慮
し、個々の積層セラミックコンデンサの信頼性を短時間
に、精度よく保証することができるスクリーニング方法
を提供することを目的とするものである。Accordingly, an object of the present invention is to provide a screening method that can guarantee the reliability of individual multilayer ceramic capacitors in a short time and with high accuracy in consideration of the above-mentioned conventional problems.
【０００９】[0009]
【課題を解決するための手段】この目的を達成するため
に、本発明のセラミック電子部品のスクリーニング方法
は、セラミック層を挟んで一対の金属層を形成してなる
セラミック電子部品に直流電圧を印加し、この直流電流
印加後の充電過程で放電現象による異常電流が検知され
たものを不良品とするものである。 [MEANS FOR SOLVING THE PROBLEMS] To achieve this object
And a method for screening a ceramic electronic component of the present invention.
Consists of a pair of metal layers sandwiching a ceramic layer
DC voltage is applied to the ceramic electronic component, and this DC current
Abnormal current due to discharge phenomenon is detected during the charging process after applying
The defective product is regarded as a defective product.
【００１０】[0010]
【００１１】[0011]
【作用】セラミック電子部品において信頼性が劣化する
場合、劣化箇所の多くはセラミック層中に存在するボイ
ドである。したがって、セラミック層中のボイドの存在
を予め知ることでセラミック電子部品のスクリーニング
は可能である。When the reliability of a ceramic electronic component deteriorates, many of the deteriorated portions are voids present in the ceramic layer. Therefore, it is possible to screen ceramic electronic components by knowing in advance the existence of voids in the ceramic layer.
【００１２】上記方法によるとセラミック層中にボイド
を有するものは、セラミック部品に電圧を印加すると充
電過程において放電現象により、サージ電流のような異
常電流を発生する。この異常電流を検知したものを不良
品とすることにより、上記目的を達成することができ
る。 According to the above method, voids are formed in the ceramic layer.
Are charged when a voltage is applied to the ceramic part.
During the charging process, the discharge phenomenon causes
Generates normal current. Detect the abnormal current
The above purpose can be achieved by
You.
【００１３】[0013]
【００１４】[0014]
【００１５】[0015]
【００１６】[0016]
【実施例】以下、本発明の実施例について図面を参照し
ながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１７】（実施例１）本実施例は、積層セラミック
コンデンサのスクリーニングについて説明する。図１
は、本発明の第１の実施例にかかるスクリーニングに用
いる回路図である。ここで、１は積層セラミックコンデ
ンサ、２は導線、３は抵抗、４は直流電源、５はオシロ
スコープ、６はスイッチを示す。(Embodiment 1) In this embodiment, screening of a multilayer ceramic capacitor will be described. FIG.
FIG. 2 is a circuit diagram used for screening according to the first example of the present invention. Here, 1 is a multilayer ceramic capacitor, 2 is a conductor, 3 is a resistor, 4 is a DC power supply, 5 is an oscilloscope, and 6 is a switch.
【００１８】本実施例に用いた積層セラミックコンデン
サの斜視図を図２に示す。７はパラジウムからなる内部
電極、８はチタン酸バリウムを主成分とするセラミック
誘電体、９は銀からなる外部電極である。本実施例で
は、内部電極層は４層からなり、隣接する内部電極間の
セラミック誘電体層の厚みは、異なる３種類の試料を用
いている。すなわち、５μｍ、１０μｍ、２０μｍであ
る。FIG. 2 is a perspective view of the multilayer ceramic capacitor used in this embodiment. 7 is an internal electrode made of palladium, 8 is a ceramic dielectric mainly composed of barium titanate, and 9 is an external electrode made of silver. In this embodiment, the internal electrode layer is composed of four layers, and three types of samples having different thicknesses of the ceramic dielectric layer between adjacent internal electrodes are used. That is, they are 5 μm, 10 μm, and 20 μm.
【００１９】次に、図１の回路によって行われるスクリ
ーニング手順について説明する。まず図１に示す回路を
作製し、上述の３種類の積層セラミックコンデンサにつ
いて１００Ｖ、２００Ｖ、３００Ｖ、４００Ｖ、５００
Ｖの直流電圧を１秒間印加し、印加直後に発生する充電
挙動をオシロスコープ５を用いて読み取る。その時、多
くの試料については図３（ａ）にみられる正常電流を示
すが、電圧によっては図３（ｂ）に示す異常電流がみら
れる。異常電流は、１．０×１０-8Ａ以上かつ半価幅
０．００５ｓｅｃ以上であることが多い。Next, a screening procedure performed by the circuit of FIG. 1 will be described. First, the circuit shown in FIG. 1 is manufactured, and 100 V, 200 V, 300 V, 400 V, 500
A DC voltage of V is applied for one second, and the charging behavior occurring immediately after the application is read using the oscilloscope 5. At this time, many samples show the normal current shown in FIG. 3A, but depending on the voltage, the abnormal current shown in FIG. 3B is seen. The abnormal current is often 1.0 × 10 −8 A or more and has a half width of 0.005 sec or more.
【００２０】次に、本実施例の結果の正しさを確認する
ため、異常電流を示した試料と正常電流を示した試料の
それぞれについての、次に述べるような信頼性試験を行
った。（表１）にその結果を示す。Next, in order to confirm the correctness of the result of the present embodiment, the following reliability tests were performed on each of the sample showing the abnormal current and the sample showing the normal current. (Table 1) shows the results.
【００２１】[0021]
【表１】 [Table 1]
【００２２】すなわち、図１に示す回路で、各条件で１
０００個のスクリーニングを実施した後、信頼性試験を
実施した。信頼性試験条件は、８５℃、８５％Ｒ．Ｈ．
の雰囲気で６４Ｖ印加である。また１０００時間の試験
後、絶縁抵抗を測定し、試験前の絶縁抵抗と比較して絶
縁抵抗が１／１０以下に低下したものを信頼性試験によ
る劣化とみなし、劣化数を数えている。That is, in the circuit shown in FIG.
After performing 000 screenings, a reliability test was performed. The reliability test conditions were 85 ° C. and 85% R.C. H.
Is applied in an atmosphere of 64 V. After the test for 1000 hours, the insulation resistance was measured. If the insulation resistance was reduced to 1/10 or less as compared with the insulation resistance before the test, it was regarded as the deterioration by the reliability test, and the number of deteriorations was counted.
【００２３】（表１）から明らかなように、異常電流が
発生した試料の全部が、信頼性試験において劣化してい
るのに対して、正常電流を示した試料については高寿命
であるといえる。但し、５μｍ品において４００Ｖおよ
び５００Ｖを印加した場合には、正常電流を示したにも
関わらず、信頼性試験での劣化が激しい。そこで、試験
後、信頼性試験で劣化した試料の内部構造を観察してみ
ると、異常電流が発生した試料の劣化箇所は、内部電極
間のセラミック誘電体層に存在するボイドであり、他
方、正常電流が発生した試料の劣化箇所は、セラミック
層自身の劣化であることが確認された。As is clear from Table 1, all of the samples in which an abnormal current has occurred are deteriorated in the reliability test, whereas the samples showing a normal current have a long life. . However, when a voltage of 400 V and 500 V is applied to a 5 μm product, the reliability test is significantly deteriorated despite showing a normal current. Therefore, after the test, when observing the internal structure of the sample that has deteriorated in the reliability test, the deteriorated portion of the sample in which the abnormal current has occurred is a void existing in the ceramic dielectric layer between the internal electrodes, It was confirmed that the deteriorated portion of the sample where the normal current was generated was the deterioration of the ceramic layer itself.
【００２４】したがって、直流高電圧下での充電曲線を
測定し、充電過程に発生する異常電流を検知すること
で、信頼性試験でボイドに起因して劣化する試料を除去
することができる。さらに、内部電極間のセラミック層
自身の劣化の点については、次の第２実施例で述べる。Therefore, by measuring a charging curve under a high DC voltage and detecting an abnormal current generated in the charging process, it is possible to remove a sample which is deteriorated due to a void in a reliability test. Further, the deterioration of the ceramic layer itself between the internal electrodes will be described in the second embodiment.
【００２５】（実施例２）図４は、本発明の第２の実施
例にかかるスクリーニングに用いる回路図である。ここ
で、図１と異なるのは、図１の回路に加えて微小電流計
１０が接続されている点である。(Embodiment 2) FIG. 4 is a circuit diagram used for screening according to a second embodiment of the present invention. Here, the difference from FIG. 1 is that a microammeter 10 is connected in addition to the circuit of FIG.
【００２６】本実施例には、内部電極間のセラミック層
の厚みが５μｍの試料を用いている。上記、正常な電流
を示したにも関わらず、劣化があった場合である。印加
電圧、印加時間の範囲は、第１の実施例と同様である。
（表２）は、図４の回路を用いてスクリーニングを行
い、異常電流が発生した試料および正常電流が発生した
試料の中で、漏洩電流が１．０×１０-6Ａ以上検出され
た試料と電流が１．０×１０-6Ａ未満の試料に対する試
料の信頼性試験結果を示している。In this embodiment, a sample in which the thickness of the ceramic layer between the internal electrodes is 5 μm is used. This is the case where the above-mentioned normal current has been shown, but there has been deterioration. The ranges of the applied voltage and the applied time are the same as in the first embodiment.
Table 2 shows samples in which a leakage current of 1.0 × 10 −6 A or more was detected among samples in which an abnormal current was generated and samples in which a normal current was generated by performing screening using the circuit of FIG. 5 shows the results of a reliability test of a sample with respect to a sample having a current of less than 1.0 × 10 −6 A.
【００２７】[0027]
【表２】 [Table 2]
【００２８】異常電流が発生した試料および漏洩電流が
１．０×１０-6Ａ以上検出された試料のすべてが信頼性
試験後劣化しているのに対して、漏洩電流が１．０×１
０-6Ａ未満の試料については全く劣化していない。従っ
て、漏洩電流を測定する本実施例による結果と、信頼性
試験結果とが全く一致し、本実施例の結果が正しいこと
がわかる。While all of the samples in which an abnormal current was generated and the samples in which the leakage current was detected to be 1.0 × 10 −6 A or more were deteriorated after the reliability test, the leakage current was 1.0 × 1
The sample less than 0 -6 A has not deteriorated at all. Therefore, the result of the present embodiment for measuring the leakage current completely matches the reliability test result, and it can be seen that the result of the present embodiment is correct.
【００２９】このように積層セラミックコンデンサに直
流電圧印加後、充電過程においてボイドの放電現象によ
る異常電流が検知されなかったものでも、漏洩電流値が
所定の値より大きいと、高電圧が印加された場合、セラ
ミック誘電体層自身の劣化により絶縁破壊してしまう。
従って、ボイドの放電現象による異常電流が検知されな
かったものでも、漏洩電流値が所定の値より大きいもの
を不良品とすることにより、ボイドだけでなく、セラミ
ック誘電体層自身の劣化により絶縁破壊を発生してしま
うものも除去することができる。 As described above, the multilayer ceramic capacitor is directly
After the application of the current voltage, the void
Even if no abnormal current was detected, the leakage current
If the voltage is larger than the predetermined value, the
The dielectric breakdown is caused by the deterioration of the dielectric layer itself.
Therefore, no abnormal current due to the void discharge phenomenon is detected.
Even if the leakage current value is greater than the specified value
By making defective products, not only voids but also ceramics
Dielectric breakdown has occurred due to the deterioration of the dielectric layer itself.
Debris can also be removed.
【００３０】なお、上記実施例は、積層セラミックコン
デンサについて示したが、セラミック層を挟んで一対の
金属層を形成してなるすべてのセラミック電子部品につ
いて、本発明のスクリーニング方法が適用できることは
言うまでもない。Although the above embodiment has been described with respect to a multilayer ceramic capacitor, it goes without saying that the screening method of the present invention can be applied to all ceramic electronic components having a pair of metal layers sandwiching a ceramic layer. .
【００３１】また、本実施例では抵抗部の両端の電流変
化をオシロスコープを用いて検知しているが、この回路
を無抵抗電流計で置き換えても同様の測定ができる。In this embodiment, the change in current at both ends of the resistance section is detected by using an oscilloscope. However, the same measurement can be performed by replacing this circuit with a non-resistance ammeter.
【００３２】また、漏洩電流検知回路１０を使用せず、
オシロスコープ５のみて、抵抗３を流れる漏洩電流を検
知することもできる。この場合は、オシロスコープ５
が、漏洩電流検知回路を兼ねている場合である。Also, without using the leakage current detection circuit 10,
The oscilloscope 5 alone can detect a leakage current flowing through the resistor 3. In this case, the oscilloscope 5
Is also a case where the circuit also serves as a leakage current detection circuit.
【００３３】[0033]
【発明の効果】以上、本発明によるとセラミック層中に
ボイドを有するものは、セラミック部品に電圧を印加す
ると充電過程において放電現象により、サージ電流のよ
うな異常電流を発生する。従って、この異常電流を検知
したものを不良品とすることにより、個々のセラミック
電子部品について確実に、短時間でスクリーニングで
き、セラミック部品の生産性において優れた効果を実現
できる。 As described above, according to the present invention, in the ceramic layer,
For those with voids, apply voltage to the ceramic part
In the charging process, a surge phenomenon occurs due to the discharge phenomenon during the charging process.
Such abnormal current is generated. Therefore, this abnormal current is detected.
Individual ceramics
Fast and reliable screening of electronic components
Achieve excellent effects on productivity of ceramic parts
it can.
【図１】本発明の第１の実施例にかかるスクリーニング
に用いる回路図である。FIG. 1 is a circuit diagram used for screening according to a first example of the present invention.
【図２】積層セラミックコンデンサの斜視図である。FIG. 2 is a perspective view of a multilayer ceramic capacitor.
【図３】第１の実施例における、充電時にみられる正常
電流図と、充電時にみられる異常電流図である。3A and 3B are a normal current diagram observed during charging and an abnormal current diagram observed during charging in the first embodiment.
【図４】本発明の第２の実施例にかかるスクリーニング
に用いる回路図である。FIG. 4 is a circuit diagram used for screening according to a second embodiment of the present invention.
１ セラミック電子部品 ２ 導線 ３ 抵抗 ４ 直流電源 ５ オシロスコープ ６ スイッチ ７ 微小電流計 DESCRIPTION OF SYMBOLS 1 Ceramic electronic component 2 Lead wire 3 Resistance 4 DC power supply 5 Oscilloscope 6 Switch 7 Micro ammeter
───────────────────────────────────────────────────── フロントページの続き (72)発明者 井垣 恵美子 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (58)調査した分野(Int.Cl.6，ＤＢ名) H01G 4/12 364 H01G 13/00 361 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Emiko Igaki 1006 Kadoma, Kazuma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (58) Field surveyed (Int. Cl. 6 , DB name) H01G 4/12 364 H01G 13/00 361
Claims (5)
してなるセラミック電子部品に直流電圧を印加し、この
直流電流印加後の充電過程で放電現象による異常電流が
検知されたものを不良品とするセラミック電子部品のス
クリーニング方法。1. A pair of metal layers formed with a ceramic layer interposed therebetween.
DC voltage is applied to the ceramic electronic component
Abnormal current due to discharge phenomenon during charging process after applying DC current
A method for screening ceramic electronic components in which a detected product is regarded as a defective product .
知されたものも不良品とする請求項１に記載のセラミッ
ク電子部品のスクリーニング方法。2. A method for detecting a predetermined amount of leakage current during a charging process.
The method for screening a ceramic electronic component according to claim 1, wherein the known component is also a defective product .
ンデンサとする請求項１あるいは請求項２に記載のセラ
ミック電子部品のスクリーニング方法。3. The ceramic electronic component is a multilayer ceramic component.
The method for screening a ceramic electronic component according to claim 1 or 2, wherein the method is a capacitor .
半価幅０．００５ｓｅｃ以上とする請求項１から請求項
３のいずれか一つに記載のセラミック電子部品のスクリ
ーニング方法。4. An abnormal current of 1.0 × 10 −8 A or more and
The half value width is set to 0.005 sec or more.
3. The method for screening a ceramic electronic component according to any one of 3 .
-6 Ａ以上とする請求項２から請求項４のいずれか一つに
記載のセラミック電子部品のスクリーニング方法。5. A leakage current having a predetermined magnitude is 1.0 × 10
-6 A or more to any one of claims 2 to 4
A method for screening a ceramic electronic component according to the above .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150302A JP2994911B2 (en) | 1993-06-22 | 1993-06-22 | Screening method for ceramic electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150302A JP2994911B2 (en) | 1993-06-22 | 1993-06-22 | Screening method for ceramic electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0714742A JPH0714742A (en) | 1995-01-17 |
| JP2994911B2 true JP2994911B2 (en) | 1999-12-27 |
Family
ID=15494039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5150302A Expired - Lifetime JP2994911B2 (en) | 1993-06-22 | 1993-06-22 | Screening method for ceramic electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2994911B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3062135B2 (en) | 1997-09-25 | 2000-07-10 | 静岡日本電気株式会社 | Earphone system |
| JP3603640B2 (en) | 1999-02-04 | 2004-12-22 | 松下電器産業株式会社 | Screening method of multilayer ceramic capacitor |
| JP5206493B2 (en) * | 2009-02-27 | 2013-06-12 | 株式会社村田製作所 | Ceramic capacitor sorting method and sorting apparatus |
-
1993
- 1993-06-22 JP JP5150302A patent/JP2994911B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0714742A (en) | 1995-01-17 |
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