JP2988016B2 - Ozone sensor - Google Patents

Ozone sensor

Info

Publication number
JP2988016B2
JP2988016B2 JP3160311A JP16031191A JP2988016B2 JP 2988016 B2 JP2988016 B2 JP 2988016B2 JP 3160311 A JP3160311 A JP 3160311A JP 16031191 A JP16031191 A JP 16031191A JP 2988016 B2 JP2988016 B2 JP 2988016B2
Authority
JP
Japan
Prior art keywords
ozone
substrate
sensor
surface roughness
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3160311A
Other languages
Japanese (ja)
Other versions
JPH0510909A (en
Inventor
弘一 立花
章良 服部
昭彦 吉田
邦夫 木村
信幸 ▲よし▼池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3160311A priority Critical patent/JP2988016B2/en
Publication of JPH0510909A publication Critical patent/JPH0510909A/en
Application granted granted Critical
Publication of JP2988016B2 publication Critical patent/JP2988016B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はオゾン発生機や各種オゾ
ン利用機器におけるオゾン濃度制御、あるいは漏洩オゾ
ン検知に用いる金属酸化物半導体薄膜を利用したオゾン
センサに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ozone sensor using a metal oxide semiconductor thin film for controlling ozone concentration in an ozone generator or various ozone-using devices or detecting leaked ozone.

【0002】[0002]

【従来の技術】オゾンは強力な酸化作用を有するので、
脱臭,殺菌等の目的で上下水道水処理,医療,食品工業
等多くの分野で利用されている。最近では、各種家電製
品への利用を通じて、一般家庭にまで普及しつつある。
しかし、有用な利用価値がある反面、オゾンはごく微量
でも人体に対して極めて有害であるため、発生量の制御
や漏洩オゾンの検知を確実に行なう必要がある。
2. Description of the Related Art Since ozone has a strong oxidizing effect,
It is used in many fields such as water and sewage water treatment, medical treatment, and food industry for the purpose of deodorization and sterilization. Recently, it has been spreading to ordinary households through use in various home appliances.
However, while having useful utility value, even a very small amount of ozone is extremely harmful to the human body, so it is necessary to reliably control the amount of ozone generated and detect leaked ozone.

【0003】オゾン濃度の測定および検知には、従来か
らの酸化還元法や吸光光度法や紫外線吸収スペクトル法
等とともに、近年、In23やSnO2等の金属酸化物
半導体による感応体薄膜を使用するオゾンセンサの実用
化が活発に進められている。このオゾンセンサは、前記
感応体薄膜の電気抵抗値がオゾン濃度に応じて変化する
のを利用するもので、小型軽量で、信頼性が高く、簡便
かつ比較的安価であるという多くの利点がある。しかし
ながら、このセンサ素子を安定に作動させるには、35
0〜450℃程度に保つ必要があるので、耐熱性でかつ
電気絶縁性の優れたα−Al23を主成分とする板状の
セラミックス基板上に1対の例えば白金電極を設け、こ
の電極間に前記感応体薄膜を形成させて素子が作製され
る。この感応体薄膜を形成させるには、電子ビームによ
る蒸着法やスパッタ法等の成膜技術の適用によっても可
能であるが、工業的には生産性の高いディッピング法,
スクリーン印刷法,スピンコート法等によりインジウ
ム,錫等の金属塩溶液を湿式塗布し、乾燥後空気中で加
熱焼成して酸化物薄膜とする方法が広く採用されてい
る。
In order to measure and detect the ozone concentration, in addition to the conventional oxidation-reduction method, absorption spectroscopy method, ultraviolet absorption spectrum method and the like, recently, a sensitive thin film made of a metal oxide semiconductor such as In 2 O 3 or SnO 2 has been used. Practical application of the ozone sensor to be used is being actively promoted. This ozone sensor utilizes the fact that the electric resistance value of the sensitive body thin film changes according to the ozone concentration, and has many advantages of being small, lightweight, highly reliable, simple and relatively inexpensive. . However, for stable operation of this sensor element, 35
Since it is necessary to keep the temperature at about 0 to 450 ° C., a pair of platinum electrodes, for example, is provided on a plate-shaped ceramic substrate mainly composed of α-Al 2 O 3 which is heat-resistant and has excellent electrical insulation. The element is manufactured by forming the sensitive body thin film between the electrodes. This sensitive thin film can be formed by applying a film forming technique such as a vapor deposition method or a sputtering method using an electron beam.
A method is widely used in which a metal salt solution of indium, tin, or the like is wet-coated by a screen printing method, a spin coating method, or the like, dried, heated and fired in air to form an oxide thin film.

【0004】[0004]

【発明が解決しようとする課題】前述したように、湿式
塗布による成膜法で形成された感応体薄膜を利用した素
子で構成されたオゾンセンサを長期間使用した場合、従
来、一部のものの特性が経時的に劣化するものがあっ
た。劣化したセンサを詳細に観察したところ、素子の感
応体薄膜が、セラミックス基板表面から部分的に剥離し
ている状態が認められた。本発明は、前記感応体薄膜の
剥離等による経時的特性劣化を改良することを目的とす
る。
As described above, when an ozone sensor composed of an element using a sensitive body thin film formed by a film forming method by wet coating is used for a long period of time, if an ozone sensor has been Some of the characteristics deteriorated with time. When the deteriorated sensor was observed in detail, it was found that the sensitive thin film of the element was partially peeled off from the ceramic substrate surface. An object of the present invention is to improve deterioration of characteristics over time due to peeling of the sensitive body thin film and the like.

【0005】[0005]

【課題を解決するための手段】本発明は、前述したよう
に、湿式塗布により成膜形成法で得られた金属酸化物半
導体を主体とする感応体薄膜を利用した素子で構成され
るオゾンセンサを長期間使用した場合の特性劣化が、前
記感応体薄膜が、セラミックス基板表面から部分的に剥
離している点に鑑み、基板表面の粗さに着目して課題を
解決したものである。具体的には表面粗さ(Ra)が
0.05μm〜0.5μmの範囲にある電気絶縁性の基
板を用い、この基板上に1対の電極および前記電極間に
金属酸化物半導体を主体とする感応体薄膜を形成させる
ことにより、長期間使用に当って、熱衝撃の繰り返しに
よる前記感応体薄膜の基板表面からの剥離等による特性
劣化を抑制するだけでなく、膜厚の均一化によりセンサ
の感度および応答性をも向上したものである。
As described above, the present invention provides an ozone sensor comprising an element using a sensitive thin film mainly composed of a metal oxide semiconductor obtained by a film forming method by wet coating. In view of the fact that the characteristic thin film is deteriorated when used for a long period of time, the sensitive thin film is partially separated from the surface of the ceramic substrate, and the problem is solved by focusing on the roughness of the substrate surface. Specifically, the surface roughness (Ra)
By using an electrically insulating substrate in the range of 0.05 μm to 0.5 μm and forming a pair of electrodes and a sensitive thin film mainly composed of a metal oxide semiconductor between the electrodes on the substrate, the length is increased. In use for a period, not only the characteristic deterioration due to the peeling of the sensitive body thin film from the substrate surface due to the repetition of thermal shock is suppressed, but also the sensitivity and responsiveness of the sensor are improved by the uniform film thickness. is there.

【0006】[0006]

【作用】本発明の要点は、表面粗さ(Ra)が0.05
μm〜0.5μmの範囲にある電気絶縁性基板を用いる
ことにより、湿式塗布による成膜法で形成される感応体
薄膜と基板の接合強度が向上し、熱衝撃にも強く、安定
した特性を維持するセンサ素子を得ることができる。同
時に、湿式成膜法で形成される感応体薄膜の有効表面積
を大きくすることができ、得られたセンサは、感度と応
答性に優れた特性を示す。
The main point of the present invention is that the surface roughness (Ra) is 0.05.
By using an electrically insulating substrate in the range of μm to 0.5 μm , the bonding strength between the sensitive thin film and the substrate formed by a film-forming method by wet coating is improved, and it is resistant to thermal shock and has stable characteristics. A sensor element to be maintained can be obtained. At the same time, the effective surface area of the sensitive element thin film formed by the wet film formation method can be increased, and the obtained sensor exhibits characteristics excellent in sensitivity and responsiveness.

【0007】[0007]

【実施例】図1は本発明によるオゾンセンサ素子の一実
施例を示す概略断面図である。図1において、1はアル
ミナ基板(2×5×0.5mm)、2はInとSnの塩化
物等の金属塩を主体として調製した塗布液をディッピン
グ法により塗布し、乾燥後空気中で600℃で1時間焼
成して作製したIn23(95wt%)とSnO2(5wt
%)からなるガス感応体薄膜(厚さ約500Å)、3は
あらかじめ基板にスパッタ法等により形成した白金電極
である。アルミナ基板としては表面粗さ(Ra)が0.
05μm,0.1μm,0.3μm,0.5μm,0.
7μm,および1.0μmのものを用いた。
FIG. 1 is a schematic sectional view showing an embodiment of an ozone sensor element according to the present invention. In FIG. 1, reference numeral 1 denotes an alumina substrate (2 × 5 × 0.5 mm), and 2 denotes a coating liquid prepared mainly by metal salts such as chlorides of In and Sn, which is applied by dipping, dried, and dried in air. In 2 O 3 (95% by weight) and SnO 2 (5% by weight)
%) Is a platinum electrode formed in advance on a substrate by a sputtering method or the like. The alumina substrate has a surface roughness (Ra) of 0.1.
05 μm, 0.1 μm, 0.3 μm, 0.5 μm, 0.
7 μm and 1.0 μm were used.

【0008】まず、これらのセンサ素子の感応体薄膜と
基板の接合性をみるため、粘着テープを用いて膜の剥離
試験を行なった。この結果を(表1)に示した。接合性
の良い順に◎,○,△の記号で表わした。表面粗さが
0.5μmを越えると粘着テープに膜の一部が剥離し、
明らかに付着しているのが認められた。剥離した膜の面
積は、見かけの成膜面積に対して約2%程度を占めてい
た。表面粗さが0.5μm以下になるとテープへの剥離
付着量は極めて少なくなり、表面粗さ0.5μmおよび
0.05μmの場合にごく微細な膜片が付着する程度で
あった。表面粗さ0.1μmおよび0.3μmの場合の
剥離は、肉眼では全く認められなかった。なお、表面粗
さが0.05μmより小さい基板を用いた場合は、焼成
直後に膜の一部に剥離が生じることが多いため、評価対
象にしなかった。前記方法により形成される薄膜は、数
〜数+Åオーダーの極めて微細な粒子が適度に焼結して
多孔質膜を形成している。基板の表面粗さが大きいと、
基板の凹部に塗布液が溜った状態になり易く、焼成スピ
ードが不均一になって歪が生じ、微細な領域で膜が浮き
上がった状態になり易く、いわゆるアンカー効果が低下
する。また、前述した状況とは逆に表面粗さが小さすぎ
てもアンカー効果は低下すると考えられる。感応体薄膜
を構成する結晶粒子のサイズや焼結状態と基板表面粗さ
の整合性をとることが重要であると判断される。
First, in order to check the bonding property between the sensitive element thin film of these sensor elements and the substrate, a film peeling test was performed using an adhesive tape. The results are shown in (Table 1). The symbols ○, △, and △ represent the order in which the bonding property is good. If the surface roughness exceeds 0.5 μm, part of the film will peel off on the adhesive tape,
Apparent attachment was observed. The area of the peeled film occupied about 2% of the apparent film formation area. When the surface roughness was 0.5 μm or less, the amount of peel adhesion to the tape was extremely small, and when the surface roughness was 0.5 μm and 0.05 μm, a very fine film piece was attached. At the surface roughness of 0.1 μm and 0.3 μm, no peeling was observed with the naked eye. In addition, surface roughness
If the substrate is smaller than 0.05 μm,
Immediately after that, peeling often occurs on a part of the film.
I didn't make it an elephant. In the thin film formed by the above method, extremely fine particles in the order of several to several + 数 are appropriately sintered to form a porous film. If the surface roughness of the substrate is large,
The coating liquid tends to accumulate in the concave portions of the substrate, the firing speed becomes non-uniform, distortion occurs, and the film easily floats in a fine region, and the so-called anchor effect decreases. Conversely, even if the surface roughness is too small, the anchor effect is considered to be reduced. It is determined that it is important to match the size and sintering state of the crystal grains constituting the sensitive body thin film with the substrate surface roughness.

【0009】[0009]

【表1】 [Table 1]

【0010】また、センサ素子を電気炉中に置き、室温
〜500℃を約1分間で昇・降温させる熱衝撃試験を1
00サイクル行なって、前記したのと同様の方法で感応
体薄膜の剥離状態を調べた結果、表面粗さが0.05μ
m〜0.5μm以下の基板を用いた場合の膜と基板の接
合状態は極めて良好であることが確認された。
Further, a thermal shock test in which the sensor element is placed in an electric furnace and the temperature is raised and lowered from room temperature to 500 ° C. in about 1 minute is performed.
00 cycles performed, results of examining the state of peeling sensitive thin film in the same manner as described above, the surface roughness is 0.05μ
It was confirmed that the bonding state between the film and the substrate was very good when a substrate having a size of m to 0.5 μm or less was used.

【0011】次に、表面粗さ0.3μmおよび1.0μ
mのアルミナ基板を用いて前記したのと同様の方法で作
製したセンサ素子を用い、以下に説明する方法でオゾン
に対する応答特性を判定した。センサ素子を素子加熱用
ヒーターに密着固定して清浄空気を満たした測定箱にセ
ットし、ヒーターに通電してセンサ素子温度を350℃
に設定した。ついで、0.5ppm相当のオゾンを測定箱
に注入して均一に拡散させてセンサ素子に接触させ、セ
ンサ素子の電気抵抗値の変化を測定した。その結果を図
2に示した。表面粗さ0.3μmの基板を用いたセンサ
の電気抵抗値の変化は大きく、応答特性、排気にともな
う復帰特性ともに優れた特性を示した。しかし、表面粗
さ1.0μmの基板を用いたセンサの抵抗変化は小さ
く、応答特性,復帰特性ともに劣ることが判明した。表
面粗さ0.3μmの基板を用いた場合の方が感応体の膜
厚が比較的均一で、かつ反応に関与する感応体の有効表
面積が大きくなるため、感度が高く、優れた応答特性に
なると考えられる。一方、表面粗さがある程度大きくな
ると、膜厚が不均一になり、膜厚が大きい部分がかなり
の面積を占め、実質的に表面積の減少をもたらすため、
反応に関与する有効表面積の減少を来すものと考えられ
る。
Next, the surface roughness of 0.3 μm and 1.0 μm
The response characteristics to ozone were determined by the method described below, using a sensor element manufactured in the same manner as described above using an alumina substrate of m. The sensor element was fixed to the heater for heating the element in close contact and set in a measuring box filled with clean air.
Set to. Next, ozone equivalent to 0.5 ppm was injected into the measurement box, uniformly diffused and brought into contact with the sensor element, and the change in the electric resistance value of the sensor element was measured. The result is shown in FIG. The change in the electric resistance value of the sensor using the substrate having a surface roughness of 0.3 μm was large, showing excellent characteristics in both response characteristics and return characteristics associated with exhaust. However, it was found that the change in resistance of the sensor using the substrate having a surface roughness of 1.0 μm was small, and both the response characteristics and the return characteristics were inferior. When a substrate with a surface roughness of 0.3 μm is used, the thickness of the sensitive body is relatively uniform, and the effective surface area of the sensitive body involved in the reaction is large, resulting in high sensitivity and excellent response characteristics. It is considered to be. On the other hand, when the surface roughness is increased to some extent, the film thickness becomes non-uniform, and a portion having a large film thickness occupies a considerable area, which substantially reduces the surface area.
It is considered that the effective surface area involved in the reaction is reduced.

【0012】さらに、表面粗さ0.3μmおよび1.0
μmの基板を用いて作製したセンサ素子を用いてセンサ
感度の経時変化を測定した。センサ素子を450℃の空
気雰囲気中に放置しておき、200時間毎に取り出し、
測定箱中で前記したのと同様の方法で350℃における
電気抵抗値の変化を測定し、センサ感度の経時変化を求
めた。センサ感度はオゾン混合空気中におけるセンサの
電気抵抗値(RG)を空気中におけるセンサの電気抵抗
値(RA)で除した値(RG/RA)で表わした。これを延
べ1000時間行ない、その結果を図3に示した。表面
粗さ0.3μmの基板を用いたセンサの感度は極めて安
定しているが、表面粗さ1.0μmの基板を用いたセン
サの感度は次第に低下することが明らかになった。表面
粗さ1.0μmの基板を用いた場合の感応体薄膜の有効
表面積は表面粗さ0.3μmの基板を用いた場合より、
初期から小さい上、焼結が進行するにつれて表面積の減
少度合が大きくなり、このために感度低下が大きくなる
ものと考えられる。
Further, the surface roughness is 0.3 μm and 1.0 μm.
The change over time in sensor sensitivity was measured using a sensor element manufactured using a μm substrate. The sensor element was left in an air atmosphere at 450 ° C. and was taken out every 200 hours.
The change in electric resistance at 350 ° C. was measured in the measurement box in the same manner as described above, and the change over time in sensor sensitivity was determined. The sensor sensitivity was represented by a value (R G / R A ) obtained by dividing the sensor resistance (R G ) in ozone mixed air by the sensor resistance (R A ) in air. This was performed for a total of 1000 hours, and the results are shown in FIG. It was found that the sensitivity of a sensor using a substrate having a surface roughness of 0.3 μm was extremely stable, but the sensitivity of a sensor using a substrate having a surface roughness of 1.0 μm gradually decreased. The effective surface area of the sensitive body thin film when using a substrate having a surface roughness of 1.0 μm is greater than that when using a substrate having a surface roughness of 0.3 μm.
It is considered that the surface area is small from the beginning, and the degree of decrease in the surface area increases as the sintering progresses.

【0013】以上の実施例で明らかなように、本発明に
よるオゾンセンサは極めて優れた特性を有している。実
施例ではオゾン感応体薄膜の作製法としてディッピング
法を用いた場合について延べたが、スクリーン印刷,ス
ピンコート,刷毛塗りその他の湿式塗布による成膜法を
適宜用いることとができ、いずれの場合にも実施例と同
様の効果が得られる。また、実施例では感応体薄膜とし
てIn23とSnO2の比率が95:5となる材料を用
いた場合についてのみ述べたが、その他の割合の材料の
場合にも同様の成果を得ることができる。また、出発材
料も実施例に限らず成膜法に適したものを適宜選択して
用いることが可能である。センサ素子各部の構造や構成
あるいは耐熱性かつ電気絶縁性基板材料や電極材料も発
明の主旨に反しない限りにおいて自由に設計あるいは使
用することができるものであることを付言する。
As is apparent from the above embodiments, the ozone sensor according to the present invention has extremely excellent characteristics. In the examples, the case where the dipping method was used as the method for producing the ozone sensitive substance thin film was described. However, a film forming method by screen printing, spin coating, brush coating, or other wet coating can be used as appropriate. The same effect as that of the embodiment can be obtained. Further, in the embodiment, only a case where a material having a ratio of In 2 O 3 to SnO 2 of 95: 5 is used as the sensitive body thin film has been described. Can be. In addition, the starting material is not limited to the examples, and a material suitable for a film forming method can be appropriately selected and used. It is added that the structure and configuration of each part of the sensor element or the heat-resistant and electrically insulating substrate material and the electrode material can be freely designed or used as long as they do not contradict the gist of the invention.

【0014】[0014]

【発明の効果】本発明によるオゾンセンサは、オゾン検
知の感度,応答性とともに熱衝撃による安定性および長
期間の信頼性にも優れ、さらに小型軽量かつ安価である
ため、オゾン発生機やオゾン利用機器におけるオゾン濃
度制御、あるいはオゾン検知等の用途に適するものであ
る。
The ozone sensor according to the present invention is excellent in stability and long-term reliability due to thermal shock in addition to sensitivity and responsiveness of ozone detection, and is small, lightweight and inexpensive. It is suitable for applications such as ozone concentration control or ozone detection in equipment.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明によるオゾンセンサの一実施例を示す概
略断面図
FIG. 1 is a schematic sectional view showing one embodiment of an ozone sensor according to the present invention.

【図2】オゾン応答を示す特性図FIG. 2 is a characteristic diagram showing an ozone response.

【図3】感度の経時変化を示す特性図FIG. 3 is a characteristic diagram showing a change over time in sensitivity.

【符号の説明】[Explanation of symbols]

1 アルミナ基板 2 感応体薄膜 3 電極 Reference Signs List 1 alumina substrate 2 sensitive film 3 electrode

───────────────────────────────────────────────────── フロントページの続き (72)発明者 木村 邦夫 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (72)発明者 ▲よし▼池 信幸 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 平4−274749(JP,A) 特開 平4−152258(JP,A) 特開 昭63−298148(JP,A) 特開 平2−285246(JP,A) (58)調査した分野(Int.Cl.6,DB名) G01N 27/12 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Kunio Kimura 1006 Kazuma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (56) References JP-A-4-274749 (JP, A) JP-A-4-152258 (JP, A) JP-A-63-298148 (JP, A) JP-A-2-285246 (JP) , A) (58) Field surveyed (Int.Cl. 6 , DB name) G01N 27/12

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 電気絶縁性の基板上に形成された1対の
電極、および前記電極間に形成された金属酸化物半導体
を主体とする薄膜状の感応体を備えたオゾンセンサにお
いて、前記基板の表面粗さ(Ra)が0.05μm〜
0.5μmの範囲にあることを特徴とするオゾンセン
サ。
1. An ozone sensor comprising: a pair of electrodes formed on an electrically insulating substrate; and a thin-film sensitive body mainly composed of a metal oxide semiconductor formed between the electrodes. Has a surface roughness (Ra) of 0.05 μm or more
An ozone sensor having a range of 0.5 μm .
【請求項2】 感応体が湿式塗布による成膜法で形成さ
れることを特徴とする請求項1記載のオゾンセンサ。
2. The ozone sensor according to claim 1, wherein the sensitive body is formed by a film forming method by wet coating.
【請求項3】 感応体の主成分がIn23およびSnO
2であることを特徴とする請求項1または2記載のオゾ
ンセンサ。
3. The main component of the sensitizer is In 2 O 3 and SnO.
Ozone sensor according to claim 1 or 2, wherein the 2.
JP3160311A 1991-07-01 1991-07-01 Ozone sensor Expired - Lifetime JP2988016B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3160311A JP2988016B2 (en) 1991-07-01 1991-07-01 Ozone sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3160311A JP2988016B2 (en) 1991-07-01 1991-07-01 Ozone sensor

Publications (2)

Publication Number Publication Date
JPH0510909A JPH0510909A (en) 1993-01-19
JP2988016B2 true JP2988016B2 (en) 1999-12-06

Family

ID=15712217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3160311A Expired - Lifetime JP2988016B2 (en) 1991-07-01 1991-07-01 Ozone sensor

Country Status (1)

Country Link
JP (1) JP2988016B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475743B1 (en) * 2002-02-16 2005-03-15 유광수 In2O3 Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering and Their Fabrication Method
RU2665348C2 (en) * 2016-07-29 2018-08-29 Акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (АО "НИФХИ им. Л.Я. Карпова") Semiconductor resistive sensors manufacturing methods for the ozone in the air content measurements
RU2660333C2 (en) * 2016-07-29 2018-07-05 Акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (АО "НИФХИ им. Л.Я. Карпова") Semiconductor resistive sensors manufacturing method for the ozone in the air content measurements
RU2660338C2 (en) * 2016-07-29 2018-07-05 Акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (АО "НИФХИ им. Л.Я. Карпова") Semiconductor resistive sensors manufacturing method for the ozone in the air content measurements
RU174115U1 (en) * 2017-02-21 2017-10-02 Федеральное государственное бюджетное учреждение науки Ордена Трудового Красного Знамени Институт химии силикатов им. И.В. Гребенщикова Российской академии наук (ИХС РАН) Flexible Integrated Gas Ozone Sensor

Also Published As

Publication number Publication date
JPH0510909A (en) 1993-01-19

Similar Documents

Publication Publication Date Title
US4507643A (en) Gas sensor with improved perovskite type material
JP2988016B2 (en) Ozone sensor
JP5155767B2 (en) Gas detection element
US3934058A (en) Method of stabilizing the hot resistance of ceramic positive temperature coefficient resistors
JPH0244390B2 (en) KANSHITSUZAIRYO
JP2004061306A (en) Manufacturing method of gas sensor
JP2962010B2 (en) Ozone sensor
JPH0862168A (en) Nitrogen oxide detecting device
JPS5888645A (en) Measuring sensor for content of oxygen in gas
Narayan et al. Formation of Ohmic contacts in semiconducting oxides
JPS60211346A (en) Dew condensation sensor
JP2001194337A (en) Method for measuring gas concentration
RU2647168C2 (en) Humidity sensor
Hossein-Babaei et al. Thickness dependence of sensitivity in thin film tin oxide gas sensors deposited by vapor pyrolysis
JPH02269948A (en) Sensor for combustion control
JPH0318750A (en) Humidity sensor element
JP3032441B2 (en) Ozone sensor
JPH06331588A (en) Method for manufacturing ozone sensor
JPH04276545A (en) Ozone sensor
KR101848764B1 (en) Micro temperature sensor and fabrication method of the same
JPH0827248B2 (en) Ozone sensor
JP2000019139A (en) Ceramic chlorine gas sensor
JPH03220448A (en) Humidity sensor
JPS5899741A (en) Gas sensing element and manufacture thereof
JP2003232763A (en) Gas sensor and its manufacturing method

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081008

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091008

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091008

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101008

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111008

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111008

Year of fee payment: 12