JP2986532B2 - Manufacturing method of AlN / Cu clad substrate - Google Patents
Manufacturing method of AlN / Cu clad substrateInfo
- Publication number
- JP2986532B2 JP2986532B2 JP2293984A JP29398490A JP2986532B2 JP 2986532 B2 JP2986532 B2 JP 2986532B2 JP 2293984 A JP2293984 A JP 2293984A JP 29398490 A JP29398490 A JP 29398490A JP 2986532 B2 JP2986532 B2 JP 2986532B2
- Authority
- JP
- Japan
- Prior art keywords
- aln
- sintered body
- plate
- clad substrate
- metallized layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、AlN/Cuクラッド基板の製造方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an AlN / Cu clad substrate.
（従来の技術） 従来、AlN/Cuクラッド基板の製造方法としては、次の
方法が提案されている。(Prior Art) Conventionally, the following method has been proposed as a method of manufacturing an AlN / Cu clad substrate.
表面を酸化したAlN焼結体に、Cu板を接触配置し、銅
の融点以下、Cu2O−Ｏの共晶温度以上で加熱接合する方
法。A method in which a Cu plate is placed in contact with an AlN sintered body whose surface is oxidized, and heated and joined at a temperature lower than the melting point of copper and higher than the eutectic temperature of Cu 2 O—O.
AlN焼結体とCu板の間に、Ag箔、Cu箔、さらに活性金
属箔を順次積層し、加熱接合する方法。A method in which an Ag foil, a Cu foil, and an active metal foil are sequentially laminated between an AlN sintered body and a Cu plate, and then heated and joined.
AlN焼結体とCu板との間に、Ag、Cu、活性金属よりな
る合金板を介在させ、加熱接合する方法。A method in which an alloy plate made of Ag, Cu, and an active metal is interposed between an AlN sintered body and a Cu plate, and heat bonding is performed.
（発明が解決しようとする課題） ところで、上記のの方法においては、Cu板のふくれ
が発生し易く、AlN焼結体に対する接着強度が不十分で
あった。またの方法においては、各箔の厚みが数μｍ
〜数10μｍと薄い為、各箔を積層、セッティングするこ
とが難しかった。さらにの方法においては、合金板を
Cu回路板と同様の寸法、形状に予め成形しなければなら
なかった。(Problems to be Solved by the Invention) In the above-mentioned method, blisters of the Cu plate are easily generated, and the adhesive strength to the AlN sintered body is insufficient. In another method, the thickness of each foil is several μm.
It was difficult to laminate and set each foil because it was as thin as ~ 10 m. In a further method, the alloy plate is
It had to be preformed into the same dimensions and shape as the Cu circuit board.
そこで本発明は、AlN焼結体とCu板の接合の為のメタ
ライズ層をCu回路の寸法、形状に合わせて容易に形成で
き、且つAlN焼結体とCu板の接着強度を高くし接合を確
実にできるAlN/Cuクラッド基板の製造方法を提供しよう
とするものである。Therefore, the present invention can easily form a metallized layer for joining the AlN sintered body and the Cu plate according to the size and shape of the Cu circuit, and increase the bonding strength between the AlN sintered body and the Cu plate to perform joining. An object of the present invention is to provide a method for reliably manufacturing an AlN / Cu clad substrate.
（課題を解決するための手段） 上記課題を解決するための本発明のAlN/Cuクラッド基
板の製造方法は、AlN焼結体に所望の寸法、形状に活性
ペーストろうを印刷法により成膜し、次に真空中又は不
活性雰囲気中でろう材の融点以上の温度で加熱溶融させ
てメタライズ層を設け、次いでAlN焼結体のメタライズ
層にCu板を重ね合わせ配置した後、真空中又は不活性雰
囲気中でメタライズ層の融点より20〜100℃高い温度範
囲で加熱溶融して、AlN焼結体とCu板を接合することを
特徴とするものである。(Means for Solving the Problems) A method for manufacturing an AlN / Cu clad substrate of the present invention for solving the above problems is to form an active paste brazing film into a desired size and shape on an AlN sintered body by a printing method. Then, a metallized layer is provided by heating and melting at a temperature equal to or higher than the melting point of the brazing material in a vacuum or an inert atmosphere, and then a Cu plate is placed on the metallized layer of the AlN sintered body, and then placed in a vacuum or in an inert atmosphere. The method is characterized in that the AlN sintered body and the Cu plate are joined by heating and melting in a temperature range of 20 to 100 ° C. higher than the melting point of the metallized layer in an active atmosphere.
尚、活性ペーストろうの成分は、Ag、Cuに活性金属で
あるTi、Zr、Hfの中から１種類添加したもの又はAg、C
u、InにTi、Zr、Hfの中から１種類添加したものであ
る。The components of the active paste wax are Ag, Cu, one of the active metals Ti, Zr, and Hf added or Ag, Cf.
One of Ti, Zr and Hf added to u and In.
ペーストろうを形成する金属粉末は、合金粉末でも良
いし、単体粉末の混合でも良い。The metal powder forming the paste solder may be an alloy powder or a mixture of simple powders.
（作用） 上述の如く本発明のAlN/Cuクラッド基板の製造方法
は、AlN焼結体上に活性ペーストろうを成膜し、融点以
上の温度で加熱溶融することにより、ろう材成分中の活
性金属成分（Ti、Zr、Hf）がAlN界面で反応し、強固な
接合層を生じ、AlN焼結体上にろう材成分からなるメタ
ライズ層が形成される。このメタライズ層は、Ag、Cu又
はAg、Cu、Inからなるろう材で、Cu板を重ね、ろう材の
融点以上に加熱融点することにより、ろう材によりAlN
焼結体とCu板が確実に接合されて、接着強度の高いAlN/
Cuクラッド基板が得られる。(Operation) As described above, the method for producing an AlN / Cu clad substrate of the present invention is characterized in that an active paste brazing film is formed on an AlN sintered body, and is heated and melted at a temperature equal to or higher than the melting point, whereby the active material in the brazing material component is heated. The metal components (Ti, Zr, Hf) react at the AlN interface to form a strong bonding layer, and a metallized layer made of a brazing material component is formed on the AlN sintered body. This metallized layer is made of Ag, Cu or a brazing material made of Ag, Cu, and In.
Sintered body and Cu plate are securely joined, and AlN /
A Cu clad substrate is obtained.
（実施例） 本発明のAlN/Cuクラッド基板の製造方法の一実施例を
説明すると、Ag71％、Cu27％、Ti2％の合金粉末85重量
％と樹脂・溶剤15重量％からなるペーストろうを調整
し、AlN焼結体上にスクリーン印刷法により厚さ40μｍ
に成膜し、次に真空中で820℃に加熱溶融してAlN焼結体
上にメタライズ層を形成し、次いでこのAlN焼結体のメ
タライズ層にCu板を重ね合わせ配置した後、アルゴン雰
囲気中で830℃に加熱溶融してAlN焼結体とCu板を接合
し、AlN/Cuクラッド基板を得た。(Example) An example of a method for manufacturing an AlN / Cu clad substrate according to the present invention will be described. A paste solder comprising 85% by weight of an alloy powder of 71% Ag, 27% of Cu and 2% of Ti and 15% by weight of a resin / solvent is prepared. And a thickness of 40μm on the AlN sintered body by screen printing
After heating and melting at 820 ° C in a vacuum to form a metallized layer on the AlN sintered body, and then laying a Cu plate on the metallized layer of this AlN sintered body, The AlN sintered body and the Cu plate were joined by heating and melting at 830 ° C. in the inside to obtain an AlN / Cu clad substrate.
次に他の実施例を説明すると、Ag粉69％、Cu粉26％、
Ti粉５％の混合粉末85重量％と樹脂・溶剤15重量％から
なるペーストろうを調整し、AlN焼結体上にスクリーン
印刷法により所望のパターンに成膜し、次に真空中で85
0℃に加熱溶融してAlN焼結体上にメタライズ層を形成
し、次いでこのAlN焼結体のメタライズ層に該メタライ
ズ層と同じ形状に加工したCu板を重ね合わせ配置した後
He雰囲気中で850℃に加熱溶融してAlN焼結体とCu板を接
合し、AlN/Cuクラッド基板を得た。Next, another embodiment will be described. Ag powder 69%, Cu powder 26%,
A paste wax consisting of 85% by weight of a mixed powder of 5% Ti powder and 15% by weight of a resin / solvent was prepared, and a film was formed in a desired pattern on an AlN sintered body by a screen printing method.
After heating and melting at 0 ° C. to form a metallized layer on the AlN sintered body, and then laying a Cu plate processed into the same shape as the metallized layer on the metallized layer of this AlN sintered body,
The AlN sintered body and the Cu plate were joined by heating and melting at 850 ° C. in a He atmosphere to obtain an AlN / Cu clad substrate.
こうして得られた各実施例のAlN/Cuクラッド基板のCu
板を剥がして、その剥離状態を観察した処、一実施例の
ものにおいては、剥離したCu板にところどころAlNが付
着し、AlN表層部から剥離が見られた。そしてインスト
ロン型引張り試験機でのピール強さは5.5kg/cm以上あっ
た。また他の実施例のものにおいては、AlN焼結体の内
部で剥離が生じ、接着力は十分であった。またパターン
の位置精度も良好であった。そしてインストロン型引張
り試験機でのピール強さは6.0kg/cm以上であった。The thus obtained Cu of the AlN / Cu clad substrate of each example was obtained.
When the plate was peeled off and its peeling state was observed, in one example, AlN adhered to the peeled Cu plate in some places, and peeling was observed from the AlN surface layer portion. The peel strength with an Instron type tensile tester was 5.5 kg / cm or more. In the other examples, peeling occurred inside the AlN sintered body, and the adhesive strength was sufficient. Also, the positional accuracy of the pattern was good. The peel strength with an Instron tensile tester was 6.0 kg / cm or more.
一方、従来のAlN/Cuクラッド基板の製造方法の１つに
ついて説明すると、AlN焼結体とCu板との間にAg箔、Cu
箔、Ti箔を順次重ね合わせ、真空中で850℃に加熱し、
接合したが、AlN焼結体とCu板の位置ずれが大きく、ま
たCu板中にAgの拡散進行が見られ、良好な接合が得られ
なかった。On the other hand, one of the conventional methods for manufacturing an AlN / Cu clad substrate will be described. An Ag foil, a Cu
Foil, Ti foil are laminated one after another, heated to 850 ° C in vacuum,
Although joining was performed, the displacement between the AlN sintered body and the Cu plate was large, and the diffusion of Ag was observed in the Cu plate, and good joining was not obtained.
（発明の効果） 以上詳記した通り本発明にAlN/Cuクラッド基板の製造
方法は、AlN焼結体上に活性金属を含むペーストろうを
所望形状に必要な膜厚に印刷した後一度真空中また不活
性雰囲気中で加熱溶融するので、活性金属とAlNとの反
応により強固な接合層が得られ且つその上にCu板の接合
に必要なAgCuを主成分とするろう層が形成されるので、
次工程でCu板を重ね、ろう層の融点以上の温度に加熱溶
融することにより、AlN焼結体とCu板が確実に接合さ
れ、接着強度の高いAlN/Cuクラッド基板が得られる。(Effects of the Invention) As described in detail above, the method of manufacturing an AlN / Cu clad substrate according to the present invention is a method in which a paste braze containing an active metal is printed in a desired shape on an AlN sintered body to a desired thickness, and then once in a vacuum. In addition, since it is heated and melted in an inert atmosphere, a strong bonding layer is obtained by the reaction between the active metal and AlN, and a brazing layer containing AgCu as a main component necessary for bonding the Cu plate is formed thereon. ,
In the next step, the Cu plates are stacked and heated and melted to a temperature equal to or higher than the melting point of the brazing layer, whereby the AlN sintered body and the Cu plate are securely bonded, and an AlN / Cu clad substrate having high adhesive strength is obtained.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｂ２３Ｋ 31/02 ３１０ Ｂ２３Ｋ 31/02 ３１０Ｆ 35/22 ３１０ 35/22 ３１０Ｄ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI B23K 31/02 310 B23K 31/02 310F 35/22 310 35/22 310D
Claims (1)
ストろうを印刷法により成膜し、次に真空中又は不活性
雰囲気中でろう材の融点以上の温度で加熱、溶融させて
メタライズ層を設け、次いでAlN焼結体のメタライズ層
にCu板を重ね合わせ配置した後、真空中又は不活性雰囲
気中でメタライズ層の融点より20℃〜100℃高い温度範
囲でメタライズ層を加熱溶融して、AlN焼結体とCu板を
接合することを特徴とするAlN/Cuクラッド基板の製造方
法。1. An active paste brazing film is formed on an AlN sintered body to a desired size and shape by a printing method, and then heated and melted in a vacuum or an inert atmosphere at a temperature higher than the melting point of the brazing material. After providing a metallized layer and then laying a Cu plate on the metallized layer of the AlN sintered body, the metallized layer is heated and melted in a vacuum or in an inert atmosphere at a temperature range 20 ° C to 100 ° C higher than the melting point of the metallized layer. And bonding the AlN sintered body and the Cu plate to the AlN / Cu clad substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293984A JP2986532B2 (en) | 1990-10-31 | 1990-10-31 | Manufacturing method of AlN / Cu clad substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293984A JP2986532B2 (en) | 1990-10-31 | 1990-10-31 | Manufacturing method of AlN / Cu clad substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04170373A JPH04170373A (en) | 1992-06-18 |
| JP2986532B2 true JP2986532B2 (en) | 1999-12-06 |
Family
ID=17801746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2293984A Expired - Lifetime JP2986532B2 (en) | 1990-10-31 | 1990-10-31 | Manufacturing method of AlN / Cu clad substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2986532B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170321900A1 (en) * | 2014-11-21 | 2017-11-09 | Bosch Corporation | Method for manufacturing ceramic heater-type glow plug, and ceramic heater-type glow plug |
| CN115446407A (en) * | 2022-09-02 | 2022-12-09 | 中国航发北京航空材料研究院 | Brazing method of high-volume-fraction SiCp/Al-based composite material and AlN ceramic |
-
1990
- 1990-10-31 JP JP2293984A patent/JP2986532B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04170373A (en) | 1992-06-18 |
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