JP2981503B2 - Electron emitting element, electron source and image display device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, an electron source having a plurality of electron-emitting portions, and an image display device using the electron source.

[Prior art] Conventionally, as an element which can obtain electron emission with a simple structure, for example, MIElinson
Are known [Radio Eng. Electron Phys., Vol. 10, pp. 1290-1296, 1
965].

This utilizes the phenomenon that electron emission occurs when a current flows through a thin film having a small area formed on a substrate in parallel with the film surface, and is generally called a surface conduction electron-emitting device. .

Examples of the surface conduction electron-emitting device include a device using a SnO ₂ (Sb) thin film developed by Elinson et al., And Au.
By thin film [G. Dittmer: “Thin Solid Films”]
9, 317, (1972)], using ITO thin film [M. Hartwell and CGFonstad: “IEEE”
Trans.ED Conf. ") P. 519, (1975)], using a carbon thin film [Hisashi Araki et al .:" Vacuum ", Vol. 26, No. 1, 2,
2 pages (1983)].

FIG. 9 shows a typical device configuration of these surface conduction electron-emitting devices. In FIG. 9, 14 is an electrode for obtaining electrical connection, 13 is a thin film formed of an electron-emitting material,
Denotes a substrate, and 15 denotes an electron emitting portion.

Conventionally, in these surface conduction electron-emitting devices,
Before electron emission, an electron emission portion is formed in advance by an electric heating process called forming. That is, when a voltage is applied between the pair of electrodes 14, the thin film 13 is energized, and the thin film 13 is locally destroyed, deformed or deteriorated by Joule heat generated by the application of the voltage. An electron emission function is obtained by forming the electron emission portion 15 described above.

However, in the electron-emitting device manufactured by the conventional energization heating forming process as described above,
The degree of change of the thin film due to electric heating, for example, the degree of local destruction, deformation or alteration, tends to vary among a plurality of elements formed on the same substrate, and the place where the change occurs tends to be not constant. In this forming device,
A part of the film has a high resistance due to the forming, and a narrow crack of 1 μm or less is formed in the film in this portion, and a film having a small island structure between the cracks is formed. In an element formed by forming, the shape, width, and shape and size of the crack vary in a complicated manner even if the forming conditions are kept constant, and it is extremely difficult to form the crack. For this reason, when functioning as an electron-emitting device, the amount of current and efficiency, the location of electron emission, the shape of the emitted electron beam, and the like vary from device to device, and a large number of devices with uniform characteristics can be obtained at one time. Things were difficult.

Further, since a relatively large power is required until the forming is completed, a large-capacity power supply is required when forming a large number of elements on the same substrate and performing the forming at the same time. Therefore, when a plurality of elements are arranged in parallel and connected by wiring electrodes to form a linear electron source, it has been difficult to form simultaneously.

Due to the above-described problems, the surface conduction electron-emitting device has not been actively used in industry, despite the advantage that the device structure is simple.

As a result of study in view of the above problems, Japanese Patent Application Laid-Open No. 01-105445
In Japanese Patent Application Laid-Open No. 01-200532, there has been proposed a surface conduction electron-emitting device in which an electron-emitting body is arranged between electrodes and an electron-emitting portion is provided by applying an electric current to the electron-emitting body. FIG. 10 shows a configuration diagram of such an electron-emitting device.

In the figure, 18 and 20 are electrodes, particularly 18 is a lower electrode and 20 is an upper electrode. Reference numeral 19 denotes an insulating layer, 16 denotes an electron emitter, and 1 denotes a substrate. In general, the electrode spacing of the surface conduction electron-emitting device is 0.01 μm to 100 μm, and the resistance of the electron-emitting portion is 1 × 10 ³ Ω / □ to 1 × 10 ⁹ Ω / □.

The features of this electron-emitting device include the following.

. It is possible to provide an electron-emitting device in which the shape and width of the crack in the electron-emitting portion are made constant without using the means of forming.

. It is possible to provide a means for equalizing the structure and size of the island-like structure in the cracks of the electron-emitting portion, thereby providing an electron-emitting device having uniform characteristics.

. Since the structure is a vertical type as shown in FIG. 10, the thickness corresponding to the crack in the electron emitting portion is determined by the thickness of the insulating layer 3, and this thickness is determined by the evaporation method, the coating method, and the like. It can be easily formed in a large area within a range of μm to 100 μm, and can be easily suppressed and formed uniformly.

[Problems to be Solved by the Invention] However, the above-mentioned surface conduction electron-emitting device has the following problems since the upper electrode 20 and the lower electrode 18 are configured to face each other.

. When forming the upper electrode 20 on the lower electrode 18, alignment accuracy such as positioning between the upper electrode 20 and the lower electrode 18 is required. Therefore, it was difficult to reduce the size of the electron-emitting portion, and it was also difficult to manufacture an electron-emitting portion having a complicated shape.

. In the formation of the insulating layer 19, when the insulating layer 19 is etched, the lower electrode 18 is damaged by overetching.

. When a plurality of device electrodes are arranged in parallel and connected by wiring electrodes, the pitch between the device electrodes cannot be so small.

That is, an object of the present invention is to provide an electron-emitting device which can solve the above-described problems and an image display device using the same.

[Means and Actions for Solving the Problems] According to the present invention, first, at least one side surface of a laminated body in which a lower electrode, an intermediate insulating layer, and an upper electrode are laminated in this order on an insulating substrate has an excess of the laminated body. By etching away a portion, the lower electrode, the intermediate insulating layer and the side surface of the upper electrode become an etching surface in which the side surfaces are aligned vertically, and the etching surface extends over the side surface of the lower electrode, the intermediate insulating layer and the upper electrode. An electron emitter is provided, wherein an electron emitter is arranged, and an electron emitter is formed on a side surface of the insulating layer on the etched surface.

Secondly, the present invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a lower electrode, an intermediate insulating layer, and an upper electrode on an insulating substrate; An etching surface in which the side surfaces of the intermediate insulating layer and the upper electrode are aligned vertically, and an electron emitter is arranged over the side surfaces of the lower electrode, the intermediate insulating layer, and the upper electrode on both the etching surfaces, An electron source is provided in which an electron emission portion is formed on a side surface of an intermediate insulating layer on both etching surfaces.

Thirdly, the present invention provides an image display device characterized in that at least an image forming member for forming an image by colliding electrons is provided on the electron emission side of the electron source. is there.

In the present invention, the lower electrode and the upper electrode on the etching surface are automatically aligned up and down during etching, so that the positioning operation between the lower electrode and the upper electrode becomes unnecessary, and at the same time, the overetching is performed. There is no damage to the lower electrode. In addition, since the pattern of the upper electrode and the pattern of the lower electrode can be formed at the same time, only one pattern forming step is required, and the formation of the electron emitting portion for displaying an image of a complicated shape becomes easy.

The electron source according to the present invention has an electron emission portion on both left and right sides of the laminate, and has a configuration in which a lower electrode and an upper electrode are vertically overlapped with an intermediate insulating layer and do not protrude left and right. Therefore, it can be arranged at a high density in a certain area. In particular, when the laminate is linear and a plurality of electron-emitting portions are provided also in the length direction of the linear laminate, the lower electrode and the upper electrode can also function as wiring electrodes, and the wiring electrodes usually provided separately Can be omitted.

Hereinafter, components and operations of the present invention will be described in detail. FIG. 1 is a schematic view showing one embodiment of the electron-emitting device according to the present invention. In the figure, 1 is a substrate, 2 and 4 are electrodes for obtaining electrical connection, especially 2 is a lower electrode, 4 is an upper electrode, 3 is an intermediate insulating layer (hereinafter abbreviated as an insulating layer), Reference numeral 6 denotes a fine particle film as an electron emitter, and reference numeral 5 denotes an electron emitting portion. When a voltage is applied between the electrodes 2 and 4 in a vacuum of about 2 × 10 ⁻⁶ Torr, a linear portion in the fine particle film 6 disposed on the end face of the insulating layer 3 between the electrodes 2 and 4 is formed. The electron emission portion 5 is used to emit electrons from the electron emission portion 5.

Next, the operation of the device according to the present invention will be described. In FIG. 1, the dimension of the thickness of the insulating layer between the upper and lower electrodes is 0.01
μm to 100 μm, and the fine particle film 6 is made of Au, Ag, Cu, Pt, P
Metal materials such as d or alloys thereof, or SnO ₂ , In
₂ O ₃ , an oxide such as PdO or the above-mentioned metal material, alloy, a mixture of oxides, etc., several V to several 100 V between the electrodes 2, 4
Is applied, a high electric field is generated on the surface of the insulating layer 3 between the upper and lower electrodes 2 and 4, and electrons are emitted from the vicinity of the electron emission portion 5. There is a threshold for the applied voltage at which electrons are emitted, and the threshold depends on the distance between the upper and lower electrodes 2 and 4 and the material of the fine particle film 6 and the electrodes 2 and 4.

The mechanism by which electrons are emitted from the electron-emitting device of the present invention has not been established, but is considered to be substantially as follows.

That is, field emission due to the application of a voltage between the narrow insulating layers, electrons emitted from the fine particle film are diffracted or scattered by the island-shaped film or electrode, secondary electron emission due to collision, or thermal Electrons, hopping electrons, Auger electrons and the like are considered.

As described above, according to the present invention, like the surface-conduction electron-emitting device in which the upper and lower electrodes are opposed to each other, it is possible to provide an electron-emitting device in which the shape and width of the crack are constant without using a means of forming. Can be.

Next, an outline of a method for manufacturing the electron-emitting device of this embodiment will be described with reference to FIG. In FIG. 2, 1 is a substrate,
Reference numerals 2 and 4 denote electrodes for obtaining electrical connection. In particular, 2 is a lower electrode, 4 is an upper electrode, 3 is an insulating layer, and 7 is a resist film.

. First, an electrode material to be the lower electrode 2 is formed on the entire surface of the substrate 1. The electrode material may be any commonly used electrode material, such as Ag, Cu, Au, Al, Ni, or the like, as long as it is well handled as an electrode material such as substrate adhesion and surface oxidation resistance. The thickness of the film is not particularly limited, but is generally preferably several hundreds to several hundreds of micrometers.

. Subsequently, the insulating layer 3 and the upper electrode 4 are formed as films so that only one side is shifted from the lower electrode 2. The upper electrode 4 uses the same electrode material as the lower electrode 2, and the insulating layer 3 is made of SiO ₂ , MgO, TiO ₂ .
₂ , Ta ₂ O ₅ , Al ₂ O _3, etc., and a laminate or mixture thereof, and the thickness may be 0.01 μm to 100 μm, and particularly 0.1 μm to 100 μm.
1010 μm is preferred. The lower electrode 2 and the insulating layer 3 are shifted from each other so that the lower electrode 2 can be conducted. Therefore, precise alignment is not necessary, and it is sufficient that the end faces are shifted using, for example, an evaporation mask.

. Next, unnecessary portions were removed by etching at once using a photolithography process that is usually used. In this case, it is preferable to use an etching method capable of performing anisotropic etching in which etching proceeds only in a direction perpendicular to the surface of the film, such as dry etching or ion milling.

Thus, in such an electron-emitting device, the end surfaces of the upper and lower device electrodes and the electron-emitting portion disposed between the electrodes may be the same. In other words, the lower electrode, the insulating layer,
By sequentially arranging the upper electrodes over the entire surface of the substrate and then etching only unnecessary portions, an electron-emitting device can be easily and accurately manufactured.

In addition, since the end faces serving as the electron emission portions are the same and the upper and lower electrodes overlap, the lower electrode 2
A large number of elements can be stably formed without any problem such as damage to the device.

Next, a fine particle film, which is an electron emitter, is arranged on one end surface between the upper and lower electrodes 2 and 4 to obtain an electron-emitting device. The device completed in this way can be equivalent to an island-shaped structure, as in the above-described device in which the upper and lower electrodes face each other, but can have a constant structure and size, and can correspond to a narrow crack in the conventional example. Needless to say, it can be determined by the thickness of the insulating layer 3 and can be easily and uniformly formed in a large area.

Further, by arranging a large number of electron-emitting portions of the electron-emitting device in parallel on the same surface, one electrode can serve as both the device electrode and the wiring electrode. Therefore, the manufacturing method can be simplified. In addition, when the electron-emitting device is used as an electron source of an image display device, since the wiring electrodes are not required, the distance between the devices can be reduced, and a higher-definition image display device can be manufactured. Further, since no wiring electrode is required and the upper and lower electrodes have the same shape, an electron emitting portion having a complicated and fine shape can be easily formed.

[Examples] Examples of the present invention will be specifically described below.

Embodiment 1 FIG. 1 shows an electron-emitting device of the present invention. In this figure, 1 is a quartz substrate, 2 and 4 are device electrodes, 2 is a lower electrode, and 4 is an upper electrode. 3 is an insulating layer, 5 is an electron emitting portion, 6
Is a fine particle film.

 Hereinafter, the manufacturing method of this embodiment will be described.

. 25.4 mm x 38.1 mm (1i
The lower electrode 2 was formed on the entire surface of the quartz substrate 1 having a size of (nch × 1.5 inch) square by a vacuum film forming technique which is generally used. The electrode material is 950 mm thick with 50 mm thick Cr underlayer.
Was used.

. Next, 50% of SiO ₂ , which is the insulating layer 3, was formed by sputtering.
[0099] The necessary electrodes were disposed using a deposition mask, and then the upper electrode 4 was formed in the same manner as the lower electrode 2.

. Thereafter, the upper and lower electrodes are formed using a commonly used photolithographic etching technique so as to have a shape as shown in FIG.
2, 4 and the insulating layer 3 were simultaneously subjected to ion milling treatment, and unnecessary portions were etched at a stretch.

. On top of this, an organic Pd compound solution (Okuno Pharmaceutical Co., Ltd.)
Was dispersed and applied, and heat treatment was performed at 300 ° C. for 13 minutes to form a fine particle film 6 as an electron emitter between the upper and lower electrodes.

About two or more electron-emitting devices obtained in this way
When placed in a vacuum vessel of × 10 ^-6 Torr, a voltage of 14 V was applied between each of the electrodes 2 and 4, and a phosphor substrate with a voltage of 1 KV applied 5 mm vertically above the element was placed. Bright spots were seen.

As described above, in the electron-emitting device of the present invention, what corresponds to the narrow crack in the conventional example is determined by the film thickness of the insulating layer 3, and this film thickness is from 0.01 μm by a vapor deposition method, a coating method, or the like.
It can be easily controlled and uniformly formed in a large area up to the range of 100 μm. In this embodiment, the electron-emitting body forming the electron-emitting portion is disposed by spin-coating an organic Pd compound solution. However, an organic metal compound such as Au or Ag may be used, or the organic metal compound solution may be dipped. Do
The metal fine particles may be arranged by a gas position method. Further, a mixture of the above-mentioned organometallic compound solution and a SiO ₂ liquid coating material (COD manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied and baked on a substrate 1 on which a lower electrode 2 is arranged, and after arranging an upper electrode 3, By forming, an end face of the SiO ₂ insulating layer containing the fine particles that are the electron emitters may be obtained.

That is, unlike a conventional example in which a thin film is formed into an island-like structure by electric heating, a large number of devices having uniform characteristics can be easily manufactured by using fine particles to form an electron emitting portion.

Embodiment 2 FIG. 3 is a schematic explanatory view showing a part of the present embodiment. 4 (a) is a cross-sectional view taken along a line AA in FIG. 3, and FIG. 4 (b) is a cross-sectional view taken along a line BB in FIG. 1 is a quartz substrate, 2 and 4 are device electrodes (2 is a lower electrode, 4 is an upper electrode) and also serves as a wiring electrode. 3 and 17 are an intermediate insulating layer and a covering insulating layer (hereinafter referred to as
Both are abbreviated as an insulating layer) and 5 is an electron emission portion.

 Hereinafter, the manufacturing method of this embodiment will be described.

. First, Cr50% and Ni950% were deposited as an undercoat layer on the entire surface of the substrate as a material of the lower electrode 2 by using a vacuum deposition method which is generally used.

. Next, 50% of SiO ₂ was used as the insulating layer 3 by sputtering.
00 film is formed, and the subbing layers Cr50 and Ni950 are further formed thereon.
Was deposited on one surface as a material for the upper electrode 4.

. On top of this, the upper and lower electrodes 2, 4 and the insulating layer 3 are simultaneously subjected to an ion milling process so as to have a linear shape as shown in FIG. Etched at once. According to this manufacturing method, the upper and lower electrodes and the insulating layer can be easily formed by passing through a single photolithography etching step, and the position of the electron emission portion can be determined by the thickness of the insulating layer. Since there is no such device, it can be said that the device easily and stably emits electrons.

. Furthermore, in order to take insulation, an SiO ₂ liquid coating material (OCD manufactured by Tokyo Ohka Kogyo Co., Ltd.) is spin-coated with a spinner and baked at 400 ° C., and the unnecessary portion of the OCD is wet-etched again using photolithographic etching technology. Then, the insulating layer 17 was obtained.

. An organic Pd compound solution (manufactured by Okuno Pharmaceutical Co., Ltd.) was dispersed and coated on the entire surface, and heat treatment was applied to form a fine particle film 6.

When a voltage was applied to the thus obtained linear electron source in a vacuum in exactly the same manner as in Example 1, electrons were emitted from places not covered with the insulating layer 17. In other words, the same effect as applying a voltage by connecting the device electrodes of a plurality of devices with the wiring electrodes could be obtained with an electron source made by a simpler manufacturing method.

In addition, since the wiring electrodes can be omitted, the electron emitting portions can be arranged at a higher density.

Embodiment 3 FIG. 5 is a schematic explanatory view showing a part of the present embodiment, and FIG. 6 is a cross-sectional view taken along the line CC of FIG. In this figure, 1 is a quartz substrate, 2 and 4 are device electrodes (2 is a lower electrode, 4 is an upper electrode), and also serves as a wiring electrode. 3
Is an insulating layer, 5 is an electron emitting portion, and 6 is a fine particle film. Regarding the manufacture of such an element, first, an insulating layer is formed between a pair of element electrodes and an electrode in the same manner as in Example 2, and then a portion to be used as an electron-emitting portion is formed by using a photolithographic etching technique.
Pd fine particles were patterned.

When a voltage was applied to the thus obtained linear electron source in a vacuum in the same manner as in Example 1, the emission of electrons from the electron emission portions 5 of all the elements caused a bright spot spot on the phosphor. Was able to confirm. In addition, these bright spots had little variation in luminance. Furthermore, since the wiring electrodes could be omitted, the electron emitting portions could be arranged at a higher density. That is, it was possible to stably produce a large number of devices with an electron source made by a simpler manufacturing method, and to arrange them at high density.

Embodiment 4 FIG. 7 is a schematic explanatory view showing a part of an embodiment of the image display device according to the present invention. The linear electron source shown in Example 3 was used as an electron source which is a component of this apparatus.
Reference numeral 8 denotes a modulation electrode, 9 denotes an electron passage hole, 10 denotes a face plate, 11 denotes a phosphor, and 12 denotes the luminance of the phosphor.

In this figure, a plurality of linear electron source groups and modulation electrode groups were orthogonalized while maintaining insulation. Further, an electron passage hole 9 of the modulation electrode is provided for each electron source of the linear electron source group so as to be positioned vertically above each electron source. Next, the face plate 10 having the phosphor 11 as an image forming member was moved 5 mm from the electron source.
The image display device was manufactured separately.

The image display device is placed in a vacuum vessel of about 2 × 10 ⁻⁶ Torr, a voltage of 14 V is applied to the device electrodes 2 and 4, and a voltage of 1 KV is applied to a transparent electrode (not shown) provided on the face plate 10. Then, electrons are sequentially emitted from the linear electron source in a linear fashion, and an appropriate voltage is arbitrarily applied to the modulation electrode 8 to extract electrons from any electron source of the linear electron source. Then, the electrons collided with the phosphor 11 through the electron passage holes 9 and an arbitrary image could be displayed as the bright spot 12 on the phosphor.

In addition, the method of manufacturing the electron source of this image display device was very easy as in Example 3, and stable electron emission was observed without any element damage or the like at the time of forming as in the conventional example. Further, since the present device has a structure in which the device electrode also serves as a wiring electrode, a larger number of devices can be arranged within a certain area, and a higher definition image can be obtained.

Embodiment 5 FIG. 8 is a schematic explanatory view showing a part of this embodiment. In this drawing, 1 is a quartz substrate, 2 and 4 are device electrodes (2 is a lower electrode, 4 is an upper electrode), 3 is an insulating layer, 10 is a face plate,
11 is the phosphor and 12 is the luminance of the phosphor.

In the present embodiment, the lower electrode 2, the insulating layer
3. The upper electrode 4 was formed into a character shape as shown in FIG. 8, and Pd fine particles were patterned on the end faces and near the three layers to form an electron emitting portion.

The electron source thus obtained is placed in a vacuum vessel of about 2 × 10 ⁻⁶ Torr, and a voltage is independently applied to the device electrodes of the respective electron-emitting devices, whereby an arbitrary electron source is placed on the fluorescent screen. It was confirmed that a luminescent spot having the same character shape as the shape of the character could be formed.

It was difficult to produce an electron emitting portion having such a curved portion or a complicated shape with an element having a conventional structure. The present invention is very effective in easily producing an electron emitting portion having such a shape with good reproducibility.

[Effects of the Invention] As described above, according to the present invention, the electron emission portion is formed on the side surface of the insulating layer in the etching surface in which the side surfaces of the lower electrode, the intermediate insulating layer, and the upper electrode are aligned vertically. Because of this structure, it is possible to easily form an electron emission part for displaying images of complicated and fine shapes, and when etching for forming the insulating layer, The lower electrode can be manufactured without being damaged.

Furthermore, since the device electrode and the wiring electrode can be integrated,
Elements can be arranged at a high density in a certain area. For this reason, in the image display device using the electron-emitting device of the present invention, more electron-emitting devices can be arranged within a certain area, and an effect that a high-definition image can be formed is also provided. ing.

Needless to say, since electrons can be emitted without performing the forming process as in the conventional example, it is possible to manufacture a large number of devices with little variation in characteristics without receiving damage such as device destruction due to the forming process. Needless to say, it is very useful in production.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an embodiment of the present invention and a first embodiment. FIG. 2 is a schematic process diagram of a method for manufacturing an electron-emitting device according to the present invention. FIG. 3 is a schematic view of an electron source according to the second embodiment. FIG. 4 (a) is a cross-sectional view taken along the line AA in FIG. 3, and FIG. 4 (b) is a cross-sectional view taken along the line BB in FIG. FIG. 5 is a schematic view of an electron source according to the third embodiment. FIG. 6 is a sectional view taken along the line CC of FIG. FIG. 7 is a schematic diagram of an image display device according to a fourth embodiment. FIG. 8 is a schematic diagram of an image display device according to a fifth embodiment. FIG. 9 is a typical schematic view of a conventional surface conduction electron-emitting device. FIG. 10 is a schematic view of a conventional surface conduction electron-emitting device in which upper and lower electrodes face each other. DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2,18 ... lower electrode 3,17,19 ... insulating layer, 4,20 ... upper electrode 5,15 ... electron emission part, 6 ... fine particle film 7 ... resist film, 8 Modulating electrode 9 Electron passing hole 10 Face plate 11 Image forming member (fluorescent plate) 12 Bright spot of phosphor 13 Thin film 14 Electrode 16 Electron emitter

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Haruhito Ono 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Seishiro Yoshioka 3-30-2 Shimomaruko, Ota-ku, Tokyo (56) References JP-A-1-105445 (JP, A) JP-A-1-302634 (JP, A) JP-A-2-112125 (JP, A) (58) Fields investigated (Int) .Cl. ⁶ , DB name) H01J 1 / 30,9 / 02 H01J 29 / 04,31 / 12

Claims (7)

(57) [Claims] At least one side surface of a laminated body in which a lower electrode, an intermediate insulating layer and an upper electrode are laminated in this order on an insulating substrate is formed by etching and removing an excess portion of the laminated body. And the side surface of the upper electrode is an etching surface aligned vertically, the electron emitter is disposed over the lower electrode, the intermediate insulating layer, and the side surface of the upper electrode on the etching surface, and the insulating layer on the etching surface is An electron-emitting device, wherein an electron-emitting portion is formed on a side surface. 2. A side surface of the laminate is an etching surface, and a lower electrode extends outward from an intermediate insulating layer and an upper electrode above the lower electrode on a side opposite to the etching surface. The electron-emitting device according to claim 1, wherein: 3. A laminate having a lower electrode, an intermediate insulating layer, and an upper electrode laminated on an insulating substrate in this order by removing excess portions of the laminate by etching the lower electrode, the intermediate insulating layer, and the lower electrode. The side surfaces of the upper electrode are vertically aligned etching surfaces, and the lower electrode, the intermediate insulating layer, and the electron emitter are arranged over the side surfaces of the upper electrode on both the etching surfaces, and the intermediate surface between the two etching surfaces is formed. An electron source, wherein an electron emission portion is formed on a side surface of an insulating layer. 4. The electron according to claim 3, wherein said laminate has a linear shape, and a plurality of electron-emitting portions on both etched surfaces are formed at intervals in the longitudinal direction of the laminate. source. 5. The electron emitter according to claim 4, wherein the electron emitters are arranged at intervals in the length direction of the laminate, and the electron emitter is formed for each electron emitter. The described electron source. 6. A coating insulating layer which covers the laminate at intervals in a longitudinal direction, and an electron emitter is provided over the coating insulating layer to cover the laminate. 5. The electron source according to claim 4, wherein said electron-emitting portion is formed for each electron-emitting body between the coating insulating layers. 7. An image display device, comprising: an image forming member for forming an image by colliding electrons at least on an electron emitting side of the electron source according to claim 3.