JP2980121B2 - Light emitting diode for signal and traffic light using the same - Google Patents

Light emitting diode for signal and traffic light using the same

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Publication number
JP2980121B2
JP2980121B2 JP26702798A JP26702798A JP2980121B2 JP 2980121 B2 JP2980121 B2 JP 2980121B2 JP 26702798 A JP26702798 A JP 26702798A JP 26702798 A JP26702798 A JP 26702798A JP 2980121 B2 JP2980121 B2 JP 2980121B2
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JP
Japan
Prior art keywords
curvature
radius
light
light emitting
tip
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Expired - Fee Related
Application number
JP26702798A
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Japanese (ja)
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JPH11154766A (en
Inventor
元量 山田
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Priority to JP26702798A priority Critical patent/JP2980121B2/en
Publication of JPH11154766A publication Critical patent/JPH11154766A/en
Application granted granted Critical
Publication of JP2980121B2 publication Critical patent/JP2980121B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To make it possible to reduce light at a given angle from a light emission observing side without a bad influence and increase the luminance of light at a different angel, as an optical signal with respect to a light emitting element sealed with a transparent lens-shaped molding member. SOLUTION: A light emitting diode includes at least two lead terminals 103 and 104, a light emitting element connected electrically, and a transparent molding member 101 molding the light emitting element. The transparent molding member 101 has a top 201 as a projected optical lens. In this case, first to fourth radii of curvature including an optical axis crossing the tip 201 of the transparent molding member 101 having a relation such that the first radius of curvature from the tip 201 to an end 202 is larger than the third radius of curvature from the tip 201 to an end 204, the fourth radius of curvature from the tip 201 to an end 205 is equal to or larger than the second radius of curvature from the tip 201 to an end 203.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、発光素子を透光性
のレンズ状モールド部材にて封止した信号用発光ダイオ
ードに係わり、特に、発光観測面側から見て一方の光を
抑制しその抑制の影響を少なくしつつ他方の光及び正面
の光を高輝度に放射させることができる信号用発光ダイ
オードに関する。
The present invention relates to relates to a light emitting diode for sealed signals in lenticular mold member of light-permeable light-emitting element, in particular, to suppress one of the light as viewed from the source light observation side The other light and front face while reducing the effect of the suppression
The present invention relates to a signal light emitting diode that can emit light of high brightness.

【0002】[0002]

【従来技術】今日、赤色、黄色、青色及び青緑色が10
00mcd以上にも及ぶ超高輝度に発光可能な発光ダイ
オードが開発された。発光ダイオードは、半導体発光素
子であるため振動等に強く長期間安定して発光すること
ができる。また、消費電力が低いという長所もある。さ
らに、発光ダイオードは、半導体素子から単色性のピ
ク波長が発光される。そのため、白色灯のように各発光
色のみを表現させるため、カラーフィルターを利用する
必要がない。さらにまた、等方的に放出される光を有効
利用するため大型な反射ミラーを使用する必要がない。
したがって、発光ダイオードを信号機に利用した場合、
外来光が信号機内部に入射し白色灯の後部に設けられた
大型な反射ミラーで反射してカラー・フィルターを介し
て信号機外に放出される疑似点灯現象を生ずることがな
い。したがって、信号機に利用される理想的な光源とし
て発光ダイオードが利用されつつある。
BACKGROUND OF THE INVENTION Today, red, yellow, blue and turquoise
Light emitting diodes capable of emitting light with an ultra-high luminance of over 00 mcd have been developed. Since the light emitting diode is a semiconductor light emitting element, it is strong against vibration and the like and can emit light stably for a long period of time. Another advantage is low power consumption. Furthermore, light emitting diodes, e e <br/> peak wavelength monochromatic light is emitted from the semiconductor element. Therefore, it is not necessary to use a color filter because only each emission color is expressed like a white light. Furthermore, it is not necessary to use a large reflecting mirror to effectively use the light emitted isotropically.
Therefore, when light emitting diodes are used for traffic lights,
There is no occurrence of a pseudo lighting phenomenon in which extraneous light enters the traffic light, is reflected by a large reflecting mirror provided at the rear of the white light, and is emitted outside the traffic light through the color filter. Therefore, the light-emitting diode as an ideal light source to be used in traffic lights are being take advantage.

【0003】発光ダイオードをより信号用等に効率よく
利用させるためには、反射ミラーをもった信号用光源な
どとは異なり1個ずつの発光ダイオードが所望の指向特
性をもつことが望ましい。信号機用などに利用される発
光ダイオードの配向特性としては、正面高度が高く上方
向へ発光する必要がない。他方、左右方向及び斜め下方
向においては、場所により視認する必要がある場合があ
る。そのため、各発光ダイオードがそれぞれ上記配向特
性を持つ必要がある。
[0003] To make efficient use of light-emitting diodes more signal or the like, light emitting diodes, such as the one by one unlike signal light source having a reflecting mirror it is desirable to have a desired directional characteristic. Regarding the orientation characteristics of light emitting diodes used for traffic lights, etc., the front elevation is high and there is no need to emit light upward. On the other hand, in the left-right direction and the diagonally downward direction, it may be necessary to visually recognize depending on the location. Therefore, each light emitting diode needs to have the above-mentioned orientation characteristics.

【0004】一方、ディスプレイ等に用いられる発光ダ
イオードにも信号用発光ダイオードに近い発光特性が求
められる場合がある。特定方向の光を強めた発光ダイオ
ード例として、特開平5−121785号、特開平5−
275752号や特開平8−162673号などが挙げ
られる。
On the other hand, there is a case where a light emitting diode used for a display or the like is required to have a light emitting characteristic close to that of a signal light emitting diode. Examples of a light emitting diode in which light in a specific direction is enhanced include JP-A-5-121785 and JP-A-5-121785.
No. 275752 and JP-A-8-162673.

【0005】特開平5−275752号には、図7
(A)、(B)、(C)に示す如く、少なくとも2本の
リード端子(703)(704)と、一方のリード端子(703)の先
端にダイボンディングされると共に他方のリード端子(7
04)をワイヤー(705)でボンディングされた発光素子(70
2)と、両リード端子(703)(704)の先端の部分をパッケー
ジする合成樹脂製のレンズ付きモールド部材とから成る
発光ダイオードが開示されている。特に、発光ダイオー
ドのモールド部における外周面の一部に、モールド部に
おける軸線と平行な平面(711)をモールド部におけるレ
ンズ(701)まで延びるように形成した発光ダイオードと
してある。
[0005] Japanese Patent Application Laid-Open No. Hei 5-275752 discloses FIG.
As shown in (A), (B) and (C), at least two lead terminals (703) and (704) are die-bonded to the tip of one of the lead terminals (703) and the other lead terminal (7).
04) with a light emitting element (70) bonded with a wire (705).
2) and a light-emitting diode comprising a synthetic resin lens-equipped molded member that packages the tip portions of both lead terminals (703) and (704). In particular, the light emitting diode is formed such that a plane (711) parallel to the axis of the molded part extends to a lens (701) of the molded part on a part of the outer peripheral surface of the molded part of the light emitting diode.

【0006】このようなレンズ形状とすることにより、
発光素子から出射される光のうちモールド部の外周面に
設けた平面(711)に向かって出射される光は、平面(711)
によって反射する。反射した光は、平面(711)と反対の
方向から出射される。平面(711)と反対の方向から出射
される出射光量分だけ人の目に届く光量をupすること
ができる。したがって、発光ダイオードとしてはそれだ
け光量の小さいものを使用でき、消費電力を節減できる
ことが開示されている。
By adopting such a lens shape,
Of the light emitted from the light emitting element, the light emitted toward the plane (711) provided on the outer peripheral surface of the mold portion is a plane (711)
Reflected by The reflected light is emitted from the direction opposite to the plane (711). The amount of light reaching the human eye can be increased by the amount of light emitted from the direction opposite to the plane (711). Therefore, it is disclosed that a light emitting diode having a smaller light amount can be used and power consumption can be reduced.

【0007】[0007]

【発明が解決しようとする課題】しかし、このように形
成された発光ダイオードは信号用の上記特性を満たすこ
とができないばかりでなく、必ずしも上述の効果を奏し
ない場合がある。発光素子であるLEDチップから放出
された光はモールド部材の形状に沿って集光されるが、
砲弾型のモールド部材の一面を平面(711)状に形成させ
ると、発光素子(702)から発光された光が全反射する。
全反射された光のうち、レンズ正面の曲率にあわせた設
計としてもレンズ正面において全反射される場合があ
る。そのため平面方向に向かって放出された発光素子(7
02)からの光がモールド部材の正面から放出され難くレ
ンズ(701)曲面に沿ってモールド部材内で反射を繰り返
し裏面側(すなわち、非発光観測面)から放出される場
合がある。モールド部材としてエポキシ樹脂を用い空気
中に発光素子からの光を放出される場合、屈折率の違い
から全反射した光も臨界角以下になり外部に放出されな
い。
However, the light emitting diode thus formed cannot not only satisfy the above-mentioned characteristics for signals, but also may not always have the above-mentioned effects. The light emitted from the LED chip, which is a light emitting element, is collected along the shape of the mold member,
When one surface of the shell-shaped mold member is formed into a flat surface (711), the light emitted from the light emitting element (702) is totally reflected.
Of the totally reflected light, there is a case where the light is totally reflected at the front of the lens even if the light is designed according to the curvature of the front of the lens. Therefore, the light emitting element (7
The light from 02) is hard to be emitted from the front of the mold member, and may be repeatedly reflected in the mold member along the curved surface of the lens (701) and emitted from the back side (that is, the non-emission observation surface). When light from a light-emitting element is emitted into the air using an epoxy resin as a mold member, light totally reflected is not more than the critical angle due to the difference in refractive index and is not emitted to the outside.

【0008】このようなモールド部材を利用して、平面
(711)で全反射された発光素子からの光を発光観測面側
に放出させようとすると砲弾形状が強くならざるを得な
い。そのため集光力が強く信号用など左右や下方向にあ
る程度幅(左右方向の半値幅約15゜〜20°、下方向
の半値幅約15゜〜20°、上方向の半値幅は、0゜で
もよい。)の広い光を得ることができないという問題を
有する。また、発光素子によっては、必ずしもレンズ設
計通りに発光しないという問題を有する。したがって、
本出願人は上記問題点を解決し信号用の利用などに適し
た所望通りの発光特性を効率よく発光可能な発光ダイオ
ードを提供することにある。
Using such a mold member, a flat surface
If the light from the light emitting element totally reflected in (711) is to be emitted to the light emission observation surface side, the shape of the shell has to be strengthened. For this reason, the light condensing power is strong, such as for signals, and a certain width in the left and right or downward direction (half-width in the horizontal direction is about 15 ° to 20 °, half-width in the downward direction is about 15 ° to 20 °, half-width in the upward direction is 0 °) ) May not be obtained. Further, there is a problem that some light emitting elements do not always emit light as designed by the lens. Therefore,
It is an object of the present invention to provide a light emitting diode which can solve the above problems and efficiently emit light with desired light emitting characteristics suitable for signal use.

【0009】[0009]

【課題を解決するための手段】本発明は、少なくとも2
つのリード端子(103)(104)と電気的に接続された発光素
子(102)と、発光素子(102)を封止し先端(201)が凸状の
光学レンズであり、且つ光学レンズの光軸がレンズ底面
に対して略垂直となる透光性モールド部材(101)とを有
する信号用発光ダイオードである。特に、先端(201)を
通る光軸を含む透光性モールド部材(101)の断面を構成
する先端(201)から端部(202)までの第1の曲率半径及び
先端(201)から他方の端部(203)までの第2の曲率半径
と、光軸を含む前記断面と垂直をなす断面を構成する先
端(201)から端部(204)までの第3の曲 率半径及び先端(2
01)から他方の端部(205)までの第4の曲率半径が、それ
ぞれ次の関係を満たす信号用発光ダイオードである。な
お、第1の曲率半径の大きさ<第3の曲率半径の大きさ
≦第2の曲率半径の大きさ、第1の曲率半径の大きさ<
第4の曲率半径の大きさ≦第2の曲率半径の大きさ、第
3の曲率半径の大きさと第4の曲率半径の大きさが略等
しい。
SUMMARY OF THE INVENTION The present invention provides at least two
Light emitting element electrically connected to the two lead terminals (103) and (104).
The element (102) and the light emitting element (102) are sealed and the tip (201) has a convex shape.
An optical lens and the optical axis of the optical lens is the bottom of the lens
A translucent mold member (101) that is substantially perpendicular to
It is a light emitting diode for a signal. In particular, the tip (201)
The cross section of the translucent mold member (101) including the optical axis passing through
Radius of curvature from the tip (201) to the end (202)
Second radius of curvature from tip (201) to the other end (203)
And a point constituting a section perpendicular to the section including the optical axis.
A third radius of curvature from end (201) to end (204) and the tip (2
01) to the other end (205),
These are signal light emitting diodes that satisfy the following relationships. What
The size of the first radius of curvature <the size of the third radius of curvature
≦ the size of the second radius of curvature, the size of the first radius of curvature <
The magnitude of the fourth radius of curvature ≦ the magnitude of the second radius of curvature,
The size of the third radius of curvature and the size of the fourth radius of curvature are substantially equal
New

【0010】これにより、不要な上方の光量を低減させ
る一方左右方向及び下方向において広視野角に発光可能
な高輝度発光ダイオードとすることができる。特に、曲
率半径の小さい第1の曲率半径(上)方向からの外来光
の入射を防止しコントラストを向上させることができ
る。また、曲率半径の大きい第3、第4の曲率半径(左
右)や第2の曲率半径(下)方向から視野角の広い発光
特性とすることができる。
Thus, it is possible to obtain a high-brightness light emitting diode capable of emitting light with a wide viewing angle in the left-right direction and the downward direction while reducing the unnecessary upper light amount. In particular, it is possible to prevent external light from being incident from the first radius of curvature (upper) direction having a small radius of curvature, thereby improving the contrast. Further, it is possible to obtain a light emission characteristic having a wide viewing angle from the third and fourth radii of curvature (left and right) and the second radius of curvature (downward) having a large radius of curvature.

【0011】即ち、発光素子から曲率半径の小さい方向
へ向かった光は、視野角が狭く且つ軸上光度を向上させ
ることができる。また、発光素子から曲率半径の大きい
方向へ向かった光は、より視野角の広い発光特性とする
ことができる。
That is, light directed from the light emitting element in the direction of a small radius of curvature has a narrow viewing angle and can improve on-axis luminous intensity. In addition, light traveling from the light emitting element in a direction having a large radius of curvature can have light emission characteristics with a wider viewing angle.

【0012】本発明の請求項2に記載の発光ダイオード
は、光軸上の発光観測面側から見て第3及び第4の曲率
半径を構成する断面と、リード端子間(103)、(104)の配
置方向とが略平行の信号用発光ダイオードである。これ
により、モールド部材のクラックなどが極めて少なく信
頼性の高い発光ダイオードとすることができる。
A light emitting diode according to claim 2 of the present invention.
Are the third and fourth curvatures as viewed from the emission observation surface side on the optical axis.
The cross section that constitutes the radius and the arrangement of the lead terminals (103) and (104)
The signal light emitting diodes are substantially parallel to the mounting direction. Thereby, a highly reliable light emitting diode with few cracks in the mold member can be obtained.

【0013】本発明の請求項3に記載の発光ダイオード
は、リード端子(103)は、発光素子(102)からの光を反射
するカップ(410)を有すると共にカップ(401)内に光軸上
の発光観測面側から見て、透光性モールド部材(101)の
第2の曲率半径、第3の曲率半径及び第4の曲率半径側
よりも第1の曲率半径側の発光出力が高くなるように発
光素子(102)を配置させた信号用発光ダイオードであ
る。これにより、発光素子からの光をより有効に利用し
所望通りの発光特性を得ることができる。
A light emitting diode according to claim 3 of the present invention.
, The lead terminal (103) reflects light from the light emitting element (102)
With the cup (410) and the optical axis inside the cup (401)
Of the translucent mold member (101)
The second radius of curvature, the third radius of curvature, and the fourth radius of curvature
So that the light emission output on the first radius of curvature side is higher than
A signal light emitting diode in which an optical element (102) is arranged.
You. This makes it possible to more effectively use light from the light emitting element and obtain desired light emission characteristics.

【0014】本発明の請求項4に記載の信号機は、少な
くとも2つのリード端子と電気的に接続された発光素子
と、発光素子を封止し先端が凸状の光学レンズであり、
且つ光学レンズの光軸がレンズ底面に対して略垂直とな
る透光性モールド部材とを有する複数の発光ダイオード
を配置させた基板と、基板を灯箱内に収納させた信号機
である。特に、発光ダイオードは先端を通る光軸を含む
透光性モールド部材の断面を構成する先端から端部まで
の第1の曲率半径及び先端から他方の端部までの第2の
曲率半径と、光軸を含む前記断面と垂直をなす断面を構
成する先端から端部までの第3の曲率半径及び先端から
他方の端部までの第4の曲率半径が以下の関係を満たす
と共に各発光ダイオードを第1の曲率半径側が信号機の
上方向となるように配置した信号機である。第1の曲率
半径の大きさ<第3の曲率半径の大きさ≦第2の曲率半
径の大きさ、第1の曲率半径の大きさ<第4の曲率半径
の大きさ≦第2の曲率半径の大きさ、第3の曲率半径の
大きさと第4の曲率半径の大きさが略等しい。これによ
り、不要な上方の光量を低減させる一方左右方向及び下
方向において広視野角に発光可能な高輝度信号機とする
ことができる。
According to a fourth aspect of the present invention, there is provided a
Light emitting device electrically connected to at least two lead terminals
And an optical lens that seals the light emitting element and has a convex tip.
And the optical axis of the optical lens is substantially perpendicular to the bottom of the lens.
Light-emitting diodes having a transparent mold member
And a traffic light with the board housed in a light box
It is. In particular, the light emitting diode includes an optical axis passing through the tip
From the tip to the end that constitutes the cross section of the translucent mold member
A first radius of curvature and a second radius from the tip to the other end.
The cross section perpendicular to the cross section including the optical axis and the radius of curvature is formed.
From the third radius of curvature from the tip to the end and from the tip
The fourth radius of curvature up to the other end satisfies the following relationship
In addition, the first curvature radius side of each light emitting diode is
It is a traffic light arranged to be upward. First curvature
Radius size <third curvature radius size ≦ second curvature half
Size of diameter, size of first radius of curvature <fourth radius of curvature
≦ the size of the second radius of curvature, the size of the third radius of curvature
The size is substantially equal to the size of the fourth radius of curvature. This makes it possible to provide a high-brightness signal device capable of emitting light with a wide viewing angle in the left-right direction and the downward direction while reducing the unnecessary upper light amount.

【0015】[0015]

【発明の実施の形態】本発明者は種々の実験の結果、モ
ールド部材を特定形状とさせることにより、一方の指向
角を抑制させ中心高度を向上させつつその他の指向角を
制御できることを見いだし本発明を成すに到った。
BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present inventor has found that by setting a mold member to a specific shape, it is possible to control one directional angle while improving the center altitude while controlling the other directional angle. The invention has been reached.

【0016】即ち、モールド部材の形状を上方向、左右
方向や下方向など少なくとも2種類以上の異なる曲率半
径を持つことにより、それぞれ独立した発光特性を示す
ことができる。曲率半径の小さい端面方向からの光を正
面輝度向上に利用しつつ、曲率半径の大きい端面方向か
ら半値幅の広い発光を得ることができるものである。特
に、信号用発光ダイオードのモールド部材としては、光
軸から透光性モールド部材の上方となる第1の曲率半
径、左右方向となる第3の曲率半径、第4の曲率半径及
び下方となる第2の曲率半径が少なくとも第1の曲率<
第3の曲率=第4の曲率及び第2の曲率の関係とするこ
とにより、上方への光を正面発光に寄与させつつ、左右
方向や下方の視野角を広くさせることができる。
That is, when the shape of the mold member has at least two types of different radii of curvature, such as upward, rightward, leftward, and downward, independent light emission characteristics can be exhibited. Light with a wide half width can be obtained from the end face with a large radius of curvature while utilizing the light from the end face with a small radius of curvature for improving the front luminance. In particular, as the mold member of the signal light emitting diode, the first radius of curvature above the translucent mold member from the optical axis, the third radius of curvature in the left-right direction, the fourth radius of curvature, and the fourth radius of curvature below. 2 has at least a first curvature <
By setting the relationship of the third curvature = the fourth curvature and the second curvature, it is possible to widen the viewing angle in the left-right direction and the lower direction while contributing the upward light to the front emission.

【0017】以下、本発明の一例を図5に示す。 図5
には、GaP基板上に発光層としてAlGaInP層を
有する赤色が発光可能なLEDチップを発光素子(502)
として利用した。LEDチップは、半導体接合を挟んで
一対の電極が形成されており、等方的な発光が可能な発
光素子(502)を構成している。次に、マウント・リード
(503)上にLEDチップをAgペーストを用いてダイボ
ンディングさせる。他方、インナー・リード(504)と金
線(505)を用いてワイヤーボンディングさせそれぞれ電
気的に接続させた。マウント・リード(503)上に配置さ
れたLEDチップ(502)をエポキシ樹脂のインサート成
形により被覆してモールド部材(501)を形成させた。
FIG. 5 shows an example of the present invention. FIG.
A red light-emitting LED chip having an AlGaInP layer as a light-emitting layer on a GaP substrate is used as a light-emitting element (502).
Used as. The LED chip has a pair of electrodes formed with a semiconductor junction interposed therebetween, and constitutes a light emitting element (502) capable of emitting light isotropically. Next, mount leads
(503) The LED chip is die-bonded on top using Ag paste. On the other hand, wire bonding was performed using the inner lead (504) and the gold wire (505), and each was electrically connected. The LED chip (502) arranged on the mount lead (503) was covered by insert molding of epoxy resin to form a molded member (501).

【0018】形成された発光ダイオードは、先端を通る
光軸を含む透光性モールド部材(501)の断面を構成する
先端から端部までの第1の曲率半径及び第1の曲率半径
と対称な先端から他方の端部までの第2の曲率半径と、
光軸を含む前記断面と垂直をなす断面を構成する先端か
ら端部までの第3の曲率半径及び第3の曲率半径と対称
な先端から他方の端部までの第4の曲率半径が、それぞ
れ第1の曲率半径の大きさ<第3の曲率半径の大きさ=
第4の曲率半径の大きさ≦第2の曲率半径の大きさとさ
せてある。また、リード端子間(503)、(504)方向とモー
ルド部材(501)の第1及び第2の曲率半径を構成する断
面とを略平行に配置させてある。第1、第3及び第4の
曲率半径側から効率よく光が取り出せるようにLEDチ
ップ(502)とインナー・リード(504)とを接続させる導電
性ワイヤー(505)を第2の曲率半径側に配置させてあ
る。
The formed light emitting diode has a first radius of curvature from a tip to an end forming a cross section of the light-transmitting mold member (501) including an optical axis passing through the tip, and is symmetric with the first radius of curvature. A second radius of curvature from the tip to the other end;
A third radius of curvature from a tip to an end and a fourth radius of curvature from a tip symmetrical to the third radius of curvature forming a section perpendicular to the section including the optical axis from the tip to the other end are respectively The magnitude of the first radius of curvature <the magnitude of the third radius of curvature =
The size of the fourth radius of curvature ≦ the size of the second radius of curvature. Further, the direction between the lead terminals (503) and (504) and the cross section of the mold member (501) forming the first and second radii of curvature are arranged substantially in parallel. A conductive wire (505) for connecting the LED chip (502) and the inner lead (504) to the second radius of curvature so that light can be efficiently extracted from the first, third and fourth radius of curvature. It is arranged.

【0019】これにより第1の曲率半径側(上方向)の
発光が少なく、且つ第3、第4及び第2の曲率半径側
(左右及び下方向)の視野角が大きく正面、左右、下方
向の輝度が高い信号用に好適な発光ダイオードとするこ
とができる。以下、本発明の構成について詳述する。
As a result, light emission on the first radius of curvature side (upward) is small, and the viewing angles on the third, fourth and second radius of curvature sides (left and right and downward) are large. A light emitting diode suitable for a signal with high luminance can be obtained. Hereinafter, the configuration of the present invention will be described in detail.

【0020】 (モールド部材101、501) モールド部材(101)(501)は、発光素子(102)(502)、リー
ド端子(103)(104)(503)(504)の一部や電気的接続部材(1
05)(505)となるワイヤ等を外部から保護すると共に発光
素子(102)(502)からの光を所望の方向に発光するもので
ある。本発明のモールド部材(101)(501)は、凸状のレン
ズ形状を含み、凸状の略先端から端部までの曲面半径が
それぞれ異なる発光ダイオードを構成させてある。その
ため、曲率半径の小さい部位では、発光素子(102)(502)
からの光を光軸上に集光し軸上光度を上げ高効率化を図
ることができる。
(Mold members 101 and 501) The mold members (101) and (501) are a part of the light emitting elements (102) and (502), a part of the lead terminals (103), (104), (503) and (504) and an electrical connection. Member (1
05) (505) to protect the wires and the like from the outside, and to emit light from the light emitting elements (102) and (502) in a desired direction. The mold members (101) and (501) of the present invention have a convex lens shape, and constitute light emitting diodes having different curved surface radii from a substantially leading end to an end. Therefore, in a portion having a small radius of curvature, the light emitting elements (102) and (502)
Light on the optical axis is condensed on the optical axis to increase the luminous intensity on the axis, thereby achieving higher efficiency.

【0021】さらに、信号用発光ダイオードなどは、曲
率半径の小さい曲面を太陽光などが入射される上方向に
配置する。これにより、光軸上の正面光度を向上させつ
つ、上方向よりも曲率半径の大きい左右方向や下方向の
光をよりワイドに広げさせることができる。また、曲率
半径の小さい方向から入射する太陽光などの外来光の反
射を減少させることができる。
Further, the light emitting diode for signal and the like has a curved surface with a small radius of curvature arranged in an upward direction where sunlight or the like is incident. Thereby, while increasing the front luminous intensity on the optical axis, it is possible to spread the light in the left-right direction and the downward direction having a larger radius of curvature than in the upward direction more widely. In addition, it is possible to reduce the reflection of extraneous light such as sunlight entering from a direction having a small radius of curvature.

【0022】モールド部材(101)(501)には、着色剤、光
安定化材、拡散剤や蛍光体など種々の添加剤を含有させ
ることもできる。モールド部材(101)(501)に着色剤を含
有させることにより所望外の波長をカットするフィルタ
ーの役目をもたすこともできる。また、拡散剤を含有さ
せることによって発光素子(102)(502)からの指向性を緩
和させ視野角を増やすことができる。さらに、蛍光体を
含有させることで混色光を発光させることもできる。特
に、比較的エネルギーの大きい光を放出可能な窒化物半
導体からなる発光素子と、発光素子から放出される光に
よって励起されそれよりも長波長光を発光する蛍光体と
の組み合わせにより高輝度に混色光が発光可能な発光ダ
イオードとすることができる。発光素子からの光と蛍光
体からの光が互いに補色関係にある場合、白色光が発
可能となる。このような蛍光体としてセリウムで付活さ
れたイットリウム・アルミニウム・ガーネット系蛍光体
やペリレン系誘導体が好適に挙げられる。
The mold members (101) and (501) may contain various additives such as a coloring agent, a light stabilizer, a diffusing agent and a phosphor. By adding a colorant to the mold members (101) and (501), it can also serve as a filter for cutting out unwanted wavelengths. Further, by including a diffusing agent, the directivity from the light emitting elements (102) and (502) can be relaxed and the viewing angle can be increased. Furthermore, mixed-color light can be emitted by including a phosphor. In particular, a high-brightness color mixture is achieved by a combination of a light-emitting element made of a nitride semiconductor that can emit light with relatively high energy and a phosphor that is excited by light emitted from the light-emitting element and emits light of a longer wavelength than that. The light emitting diode can emit light. If light from the light and phosphor from the light emitting element is in complementary relationship, white light is possible fire. Suitable examples of such a phosphor include an yttrium-aluminum-garnet-based phosphor activated with cerium and a perylene-based derivative.

【0023】モールド部材(101)(501)の具体的材料とし
ては、エポキシ樹脂、ユリア樹脂やイミド樹脂などの耐
候性に優れた透光性樹脂やガラスなどが好適に用いられ
る。また、拡散剤としては、チタン酸バリウム、酸化チ
タン、酸化アルミニウム、酸化珪素等が好適に用いられ
る。このようなモールド部材(101)(501)は、インサート
成形やポッティング法などにより比較的簡単に形成する
ことができる。
As a specific material of the mold members (101) and (501), a translucent resin having excellent weather resistance, such as an epoxy resin, a urea resin, or an imide resin, or a glass is preferably used. As the diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide and the like are preferably used. Such mold members (101) and (501) can be formed relatively easily by insert molding or potting.

【0024】なお、本発明の曲率半径とは、球面におけ
る曲率半径だけでなく、実質的に本発明の効果を奏する
限り放物や楕円などの非球面における近似したものをも
含んでいる。したがって、楕円などの非球面の場合は、
擬似的に短軸の大きさの大小で判断することができる。
同様に、近似した曲率は光軸上の発光観測面側から見た
レンズ倍率で比較することもできる。また、球面と非球
面との組み合わせにおいては、曲率半径と短軸との大小
で判断することもできる。
Note that the radius of curvature of the present invention includes not only the radius of curvature of a spherical surface but also an approximation of an aspherical surface such as a paraboloid or an ellipse as long as the effects of the present invention are substantially exerted. Therefore, for an aspheric surface such as an ellipse,
It can be determined in a pseudo manner based on the magnitude of the short axis.
Similarly, the approximate curvature can be compared with the lens magnification viewed from the light emission observation surface side on the optical axis. Further, in a combination of a spherical surface and an aspherical surface, the determination can be made based on the magnitude of the radius of curvature and the minor axis.

【0025】具体的には、(近似した)第1の曲率を含
むレンズ面の倍率を第1のレンズ倍率、(近似した)第
2の曲率を含むレンズ面の倍率を第2のレンズ倍率、
(近似した)第3の曲率を含むレンズ面の倍率を第3の
レンズ倍率、(近似した)第4の曲率を含むレンズ面の
倍率を第4のレンズ倍率の大きさとそれぞれ分ける。
Specifically, the magnification of the lens surface including the (approximately) first curvature is a first lens magnification, the magnification of the lens surface including the (approximately) second curvature is the second lens magnification,
The magnification of the lens surface including the (approximate) third curvature is divided into the third lens magnification, and the magnification of the lens surface including the (approximate) fourth curvature is divided into the magnitude of the fourth lens magnification.

【0026】モールド部材(101)(501)の部分的レンズ倍
率は、それぞれ第2のレンズ倍率≦第3のレンズ倍率、
第4のレンズ倍率<第1のレンズ倍率の関係(第2のレ
ンズ倍率≦第3のレンズ倍率=第4のレンズ倍率<第1
のレンズ倍率の関係)を満たすこととなる。この場合、
光軸上の発光観測面側から発光ダイオードを観測すると
本発明の特定のモールド形状(101)(501)のレンズ効果に
より、図1の如き、発光素子(102)やリード端子(103)、
(104)が歪に配置されたように観測される。
The partial lens magnifications of the mold members (101) and (501) are respectively as follows: second lens magnification ≦ third lens magnification;
The relationship of fourth lens magnification <first lens magnification (second lens magnification ≦ third lens magnification = fourth lens magnification <first lens magnification)
Lens magnification). in this case,
When the light emitting diode is observed from the light emission observation surface side on the optical axis, due to the lens effect of the specific mold shape (101) (501) of the present invention, as shown in FIG.
It is observed that (104) is arranged in the strain.

【0027】 (発光素子102、502) 本発明に用いられる発光素子(102)(502)は、電力の供給
を受けて発光可能な半導体発光素子である。このような
半導体発光素子は、液相成長法やMOCVD法等により
基板上に種々の半導体材料を積層した構造が挙げられ
る。半導体発光素子の発光層に用いられる具体的材料と
しては、GaAs、GaP、GaAlAs、GaAs
P、AlGaInP、GaN、InN、AlN、InG
aN、InGaAlN等が好適に挙げられる。発光素子
(102)(502)の構造としては、MIS接合、pn接合、P
IN接合を有するホモ接合、ヘテロ接合やダブルへテロ
構造などが挙げられる。また、発光層を量子効果が生ず
る単一量子井戸構造や多重量子井戸構造とすることがで
きる。半導体層の材料やその混晶度によって発光波長を
紫外域から赤外域まで種々選択することができる。
(Light-Emitting Elements 102 and 502) The light-emitting elements (102) and (502) used in the present invention are semiconductor light-emitting elements that can emit light when supplied with electric power. Such a semiconductor light emitting device has a structure in which various semiconductor materials are stacked on a substrate by a liquid phase growth method, an MOCVD method, or the like. Specific materials used for the light emitting layer of the semiconductor light emitting device include GaAs, GaP, GaAlAs, and GaAs.
P, AlGaInP, GaN, InN, AlN, InG
aN, InGaAlN and the like are preferable. Light emitting element
(102) The structure of (502) includes MIS junction, pn junction, P
Examples include a homojunction having an IN junction, a heterojunction, and a double heterostructure. Further, the light emitting layer can have a single quantum well structure or a multiple quantum well structure in which a quantum effect occurs. The emission wavelength can be variously selected from the ultraviolet region to the infrared region depending on the material of the semiconductor layer and the degree of mixed crystal thereof.

【0028】具体的一例として、窒化物系化合物半導体
発光素子を示す。窒化物系化合物半導体発光素子は、サ
ファイヤ基板上にGaN、AlNやGaAlN等のバッ
ファー層を形成しその上にpn接合を有する窒化ガリウ
ム半導体を形成させる。窒化ガリウム系半導体は、不純
物をドープしない状態でn型導電性を示す。なお、発光
効率を向上させる等所望のn型窒化ガリウム半導体を形
成させる場合は、n型ドーパントとしてSi、Ge、S
e、Te、C等を適宜導入することが好ましい。
As a specific example, a nitride-based compound semiconductor light emitting device will be described. In a nitride-based compound semiconductor light emitting device, a buffer layer of GaN, AlN, GaAlN, or the like is formed on a sapphire substrate, and a gallium nitride semiconductor having a pn junction is formed thereon. Gallium nitride-based semiconductors exhibit n-type conductivity without being doped with impurities. When a desired n-type gallium nitride semiconductor is formed, such as to improve luminous efficiency, Si, Ge, S
It is preferable to appropriately introduce e, Te, C, and the like.

【0029】一方、p型窒化ガリウム半導体を形成させ
る場合は、p型ドーパンドであるZn、Mg、Be、C
a、Sr、Ba等をドープさせる。窒化ガリウム半導体
は、p型ドーパントをドープしただけでは低抵抗化しに
くいためp型ドーパント導入後に、低電子線照射、プラ
ズマ照射や熱処理することで低抵抗化させることが好ま
しい。その後、pn各半導体に電力が供給できるよう、
各半導体のコンタクト層表面をエッチングにより露出さ
せる。各導電型のコンタクト層に電力を供給する電極を
スパッタリング法や真空蒸着法などにより形成させる。
p型電極は、透光性の全面電極(407)としての金属薄膜
と、ワイヤーボンドさせるパッド電極(408)とをそれぞ
れ形成させてある。
On the other hand, when a p-type gallium nitride semiconductor is formed, p-type dopants such as Zn, Mg, Be, and C are used.
a, Sr, Ba and the like are doped. Since it is difficult to reduce the resistance of a gallium nitride semiconductor simply by doping it with a p-type dopant, it is preferable to reduce the resistance by introducing a low electron beam, irradiating a plasma, or performing heat treatment after introducing the p-type dopant. Then, so that power can be supplied to each pn semiconductor,
The contact layer surface of each semiconductor is exposed by etching. An electrode for supplying electric power to the contact layer of each conductivity type is formed by a sputtering method, a vacuum evaporation method, or the like.
In the p-type electrode, a metal thin film as a light-transmitting whole surface electrode (407) and a pad electrode (408) to be wire-bonded are formed.

【0030】成膜された半導体ウエハーは、ダイヤモン
ド製の刃先を有するブレードが回転するダイシングソー
により直接フルカットするか、又は刃先幅よりも広い幅
の溝を切り込んだ後(ハーフカット)、外力によって半
導体ウエハーを割る。あるいは、先端のダイヤモンド針
が往復直線運動するスクライバーにより半導体ウエハー
に極めて細いスクライブライン(経線)を例えば碁盤目
状に引いた後、外力によってウエハーを割り半導体ウエ
ハーからチップ状にカットする。
The formed semiconductor wafer is directly full-cut by a dicing saw in which a blade having a diamond cutting edge is rotated, or is cut into a groove having a width larger than the cutting edge width (half cut). Crack semiconductor wafer. Alternatively, an extremely thin scribe line (meridian) is drawn on the semiconductor wafer, for example, in a checkerboard pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is cut by an external force and cut into chips from the semiconductor wafer.

【0031】野外などの使用を考慮する場合、高輝度な
半導体材料として黄色、緑色、青色や青緑色等を発光す
る半導体材料として窒化物系化合物半導体(InxGay
AlzN、但し、0≦x、0≦y、0≦z、x+y+z
=1)を用いることが好ましく、同様に、黄色や赤色で
はアルミニウム、インジウム、ガリウム、燐系半導体を
用いることが好ましいが、用途によって種々利用できる
ことは言うまでもない。
[0031] When considering the use of such field, yellow as a high luminance semiconductor material, green, blue or blue nitride-based compound semiconductor green or the like as a semiconductor material that emits light (In x Ga y
Al z N, where 0 ≦ x, 0 ≦ y, 0 ≦ z, x + y + z
= 1), and similarly, for yellow and red, it is preferable to use aluminum, indium, gallium, and a phosphorus-based semiconductor, but it goes without saying that various semiconductors can be used depending on the application.

【0032】信号用の青色、黄色或いは青緑色が高輝度
に発光可能な発光素子として、通常、窒化物系化合物半
導体を用いた発光素子は、赤色や黄色が発光可能な4元
系のAlInGaPなどの材料を用いた発光素子と異な
り、同一半導体表面側に正極(408)及び負極(409)の電極
を形成させる場合がある。また、活性層(404)を挟んで
組成の異なるダブルへテロ構造(403)(405)としてある。
As a light-emitting element capable of emitting blue, yellow or blue-green light for signals with high luminance, a light-emitting element using a nitride-based compound semiconductor is usually a quaternary AlInGaP capable of emitting red or yellow light. Unlike the light emitting element using the above material, a positive electrode (408) and a negative electrode (409) may be formed on the same semiconductor surface side. In addition, double hetero structures (403) and (405) having different compositions sandwiching the active layer (404) are provided.

【0033】発光素子(102)から放出される光は、発光
素子(102)の表面から放出されるものの他、ダブルへテ
ロ構造などのため活性層(404)などを導波管の如く伝搬
して放出される光もある。そのため活性層(404)端面側
から放出された光の一部は、発光素子(102)に電力を供
給する電極(409)の陰になる。通常、電極(409)は光を遮
光するW、Al、TiやInなどの金属や合金が用いら
れている。この電極(409)の陰により発光素子の放出さ
れた光は、等方的に均一に発光できない。特に、窒化ガ
リウム系化合物半導体は、可視光に対して透過性がよい
ので顕著に現れることとなる。
The light emitted from the light emitting element (102) is not only emitted from the surface of the light emitting element (102), but also propagates through the active layer (404) and the like due to a double hetero structure like a waveguide. Some light is emitted. Therefore, part of the light emitted from the end face side of the active layer (404) is shaded by the electrode (409) for supplying power to the light emitting element (102). Usually, the electrode (409) is made of a metal or alloy such as W, Al, Ti or In which blocks light. The light emitted from the light emitting element cannot be isotropically and uniformly emitted due to the shadow of the electrode (409). In particular, gallium nitride-based compound semiconductors are notable because they have good transparency to visible light.

【0034】一方、発光ダイオードから放出される光
は、モールド部材(101)(501)により集光させ所望の発光
特性を持たせることができる。しかしながら、モールド
部材(101)(501)により集光された光は、発光素子(102)
(502)から放出された光に大きく依存する。特に、発光
素子(102)(502)からの光を特定方向に発光させるためモ
ールド部材(101)(501)を特定形状とさせた発光ダイオー
ドにおいては、発光素子(102)(502)が配置されたマウン
ト・リード(103)(503)のカップ(410)から放出される光
の指向特性が、光学レンズによる指向特性よりも大きく
影響する。そのため、発光素子(102)(502)から等方的に
均一光が発光されなければ所望通りの発光特性を得難い
傾向にある。
On the other hand, the light emitted from the light emitting diode can be condensed by the mold members (101) and (501) to have desired light emitting characteristics. However, the light collected by the mold members (101) and (501) is a light-emitting element (102)
It largely depends on the light emitted from (502). In particular, in a light emitting diode in which the molding members (101) and (501) have a specific shape in order to emit light from the light emitting elements (102) and (502) in a specific direction, the light emitting elements (102) and (502) are arranged. The directivity of light emitted from the cup (410) of the mounted lead (103) (503) has a greater effect than the directivity of the optical lens. Therefore, unless uniform light is emitted from the light-emitting elements (102) and (502), it tends to be difficult to obtain desired light-emitting characteristics.

【0035】本発明は発光素子(102)(502)から異方性を
持って放出される光とモールド部材(101)(501)の形状を
考慮して発光素子(102)(502)を配置させる。曲率半径
(擬似的な曲率を含む)が大きくレンズ倍率の小さい曲
面においては集光力が低いため発光素子(102)(502)から
の光量が多いことが望ましい。他方、曲率半径(擬似的
な曲率を含む)が小さくレンズ倍率の大きい曲面は、視
野角を広げることに寄与する割合が少なく光軸上は集光
力が高いため発光素子(102)(502)からの光量が比較的少
なくても良い。これらを考慮することにより所望通りの
発光特性を得られる発光ダイオードとしたものである。
すなわち、カップ(410)上に配置された発光素子(102)に
電力を供給することにより光軸上の発光観測面側から放
出される光が均一に放出されない場合、モールド部材(1
01)の曲率半径が最も小さい部位と光軸に対して対称に
発光素子(102)の最も発光の暗い部分が配置されるよう
モールド部材(101)と発光素子(102)を配置させる。
In the present invention, the light emitting elements (102) and (502) are arranged in consideration of the light emitted from the light emitting elements (102) and (502) with anisotropy and the shapes of the mold members (101) and (501). Let it. On a curved surface having a large radius of curvature (including a pseudo curvature) and a small lens magnification, the light condensing power is low, so that it is desirable that a large amount of light is emitted from the light emitting elements (102) and (502). On the other hand, a curved surface having a small radius of curvature (including a pseudo curvature) and a large lens magnification has a small contribution to widening the viewing angle and a high light-gathering power on the optical axis, so that the light-emitting elements (102) and (502) The amount of light from the light source may be relatively small. By taking these factors into consideration, a light emitting diode that can obtain desired light emitting characteristics is obtained.
That is, when the light emitted from the light emission observation surface side on the optical axis is not uniformly emitted by supplying power to the light emitting element (102) disposed on the cup (410), the mold member (1
The mold member (101) and the light emitting element (102) are arranged such that the darkest part of the light emitting element (102) is arranged symmetrically with respect to the part having the smallest radius of curvature in (01) and the optical axis.

【0036】また、発光素子(502)から等方的に発光す
る場合においても導電性ワイヤー(505)の陰になるなど
モールド部材(501)がない場合における光軸上の発光観
測面側からみて暗い部位が生ずる場合がある。この場合
も、モールド部材(501)の曲率半径が最も小さい部位と
光軸に対して対称に光軸上の発光観測面側から見て最も
暗い部位がくるように配置させる。これらにより、最も
効率よく所望の発光特性を得られる発光ダイオードとす
ることができる。
Also, when light is emitted from the light emitting element (502) isotropically, it is viewed from the light emission observation surface side on the optical axis when there is no mold member (501) such as behind the conductive wire (505). Dark areas may occur. In this case as well, the mold member (501) is arranged so that the portion having the smallest radius of curvature and the darkest portion as viewed from the light emission observation surface side on the optical axis are symmetrical with respect to the optical axis. Thus, a light-emitting diode that can obtain desired light-emitting characteristics most efficiently can be obtained.

【0037】 (リード端子103、104、503、504) リード端子(103)(104)(503)(504)は、発光素子(102)(50
2)に外部から電力を供給する電極として働く。したがっ
て、リード端子(103)(104)(503)(504)は、十分な電気伝
導性とボンデイングワイヤー等との接続性が求められ
る。リード端子(103)(503)上に発光素子(102)(502)を配
置させる場合は、マウントリードなどとして働き、発光
素子(102)(502)を積載させないで導通を採るものはイン
ナー・リードとして働く。
(Lead Terminals 103, 104, 503, 504) The lead terminals (103), (104), (503), and (504) are
2) Acts as an electrode to supply power from outside. Therefore, the lead terminals (103), (104), (503), and (504) are required to have sufficient electrical conductivity and connectivity with a bonding wire or the like. When the light emitting elements (102) and (502) are arranged on the lead terminals (103) and (503), they function as mount leads, etc., and those that conduct without connecting the light emitting elements (102) and (502) are inner leads. Work as

【0038】本発明において、発光ダイオードから効
よく発光させるためには、発光素子の発光部を光学レン
ズとなるモールド部材(101)(501)の光軸上に配置するこ
とが好ましい。この場合、光軸上の発光観測面側から見
た先端からの各曲率半径が異なるため曲率半径の小さい
第1の曲率半径側(上方)にリード端子が偏ることとな
る。リード端子とモールド部材との端面との距離が短い
場合は、膨張係数の違いなどにより破壊され易い傾向に
ある。そのため、マウント・リードとインナー・リード
間の方向をよりモールド部材(101)(501)端面との距離が
かせげる平行方向とすることが好ましい。
[0038] In the present invention, in order to light-emitting diodes or al efficiency may emit light is preferably disposed on the optical axis of the mold member that the light emitting portion becomes an optical lens of the light emitting element (101) (501). In this case, since the respective radii of curvature from the tip viewed from the light emission observation surface side on the optical axis are different, the lead terminals are biased toward the first radius of curvature (upper side) having a smaller radius of curvature. When the distance between the lead terminal and the end face of the mold member is short, the lead terminal tends to be broken due to a difference in expansion coefficient or the like. For this reason, it is preferable that the direction between the mount lead and the inner lead is a parallel direction in which the distance from the end surfaces of the mold members (101) and (501) can be increased.

【0039】一方、モールド部材(101)(501)の強度が高
い或いは、柔軟性がある場合は、基板の取り付け時にリ
ード端子間(マウント・リード(103)(503)とインナー・
リード(104)(504)間)方向の方が移動しにくいことから
マウント・リード(103)(503)とインナー・リード(104)
(504)間の方向を第1の曲率半径(上方)及び第2の曲
率半径間(下方)方向に配置させることもできる。リー
ド端子間方向は、基板に取り付けても傾斜しにくいこと
から安定した発光特性を得ることができる。
On the other hand, if the strength of the mold members (101) and (501) is high or if the mold members are flexible, the distance between the lead terminals (mount lead (103) (503) and inner
(Between the leads (104) and (504)) is more difficult to move, so the mount lead (103) (503) and the inner lead (104)
The direction between (504) can be arranged between the first radius of curvature (upward) and the second radius of curvature (downward). Since the direction between the lead terminals is hardly inclined even when attached to the substrate, stable light emission characteristics can be obtained.

【0040】マウント・リード(103)上に発光素子(102)
を配置させる場合は、熱硬化性樹脂などによって行うこ
とができる。具体的には、エポキシ樹脂、シリコーン樹
脂、アクリル樹脂やイミド樹脂などが挙げられる。ま
た、発光素子(502)とマウント・リード(503)とを接着さ
せると共に電気的に接続させるためにはAgペースト、
カーボンペースト、ITOや金属バンプ等を用いること
ができる。さらに、各発光素子(102)(502)の発光効率を
向上させるためにカップ表面に反射機能を持たせても良
い。
Light emitting element (102) on mount lead (103)
Can be made of a thermosetting resin or the like. Specific examples include an epoxy resin, a silicone resin, an acrylic resin, and an imide resin. Further, in order to bond and electrically connect the light emitting element (502) and the mounting lead (503), an Ag paste,
Carbon paste, ITO, metal bumps and the like can be used. Further, a reflection function may be provided on the cup surface in order to improve the luminous efficiency of each light emitting element (102) (502).

【0041】リード端子(103)(104)(503)(504)に用いら
れる具体的な比抵抗としては、300μΩ・cm以下が
好ましく、より好ましくは、3μΩ・cm以下である。
また、発光素子からの発熱を効率よく外部に逃がすべく
リード端子(103)(104)(503)(504)は、熱伝導度がよいこ
とが求められる。特に、発光素子(102)(502)が配置され
るマウント・リード(103)(503)は、他のリード端子(10
4)(504)よりも表面積を大きくさせ放熱性を向上させる
ことが好ましい。リード端子(103)(104)(503)(504)の具
体的な熱伝導性は、0.01cal/(s)(cm2
(℃/cm)以上が好ましく、より好ましくは 0.5
cal/(s)(cm2)(℃/cm)以上である。ま
た、これらの条件を満たす材料としては、鉄、銅、鉄入
り銅、錫入り銅等が挙げられる。
The specific resistance used for the lead terminals (103), (104), (503) and (504) is preferably 300 μΩ · cm or less, more preferably 3 μΩ · cm or less.
In addition, the lead terminals (103), (104), (503), and (504) are required to have good thermal conductivity in order to efficiently release heat generated from the light emitting element to the outside. In particular, the mounting leads (103) and (503) on which the light emitting elements (102) and (502) are arranged have other lead terminals (10
4) It is preferable to improve the heat radiation by increasing the surface area as compared with (504). The specific thermal conductivity of the lead terminals (103), (104), (503), and (504) is 0.01 cal / (s) (cm 2 ).
(° C./cm) or more, more preferably 0.5
cal / (s) (cm 2 ) (° C./cm) or more. Materials satisfying these conditions include iron, copper, iron-containing copper, and tin-containing copper.

【0042】また、発光素子(102)(502)とリード端子(1
03)(104)(503)(504)とを電気的に接続させるためには電
気的接続部材が用いられる。電気的接続部材は、発光素
子(102)(502)とリード端子(103)(104)(503)(504)とを金
属線で接続させた導電性ワイヤー(105)(505)でも良い
し、導電ペーストや金属バンプで形成させても良い。電
気的接続部材は、オーミック性、機械的接続性、電気伝
導性及び熱伝導性がよいものが求められる。電気的接続
部材の熱伝導度としては0.01cal/(s)(cm
2)(℃/cm)以上が好ましく、より好ましくは0.
5cal/(s)(cm2)(℃/cm)以上である。
具体的には、金、銅、白金、アルミニウム等及びそれら
の合金を用いたボンデイングワイヤーが挙げられる。ま
た、銀、カーボン、ITO等の導電性フィラーを樹脂で
充填した導電性接着剤等を用いることもできる。作業性
を考慮してアルミニウム線あるいは金線が好ましい。以
下、本発明の実施例について詳述するが、これのみに限
られないことはいうまでもない。
Further, the light emitting elements (102) and (502) and the lead terminals (1)
An electrical connection member is used to electrically connect the 03, 104, 503, and 504. The electrical connection member may be a conductive wire (105) (505) in which the light emitting element (102) (502) and the lead terminal (103) (104) (503) (504) are connected by a metal wire, It may be formed by a conductive paste or a metal bump. The electrical connection member is required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity. The thermal conductivity of the electrical connection member is 0.01 cal / (s) (cm
2 ) (° C./cm) or higher, more preferably 0.1 ° C./cm or higher.
5 cal / (s) (cm 2 ) (° C./cm) or more.
Specifically, a bonding wire using gold, copper, platinum, aluminum, or the like, or an alloy thereof may be used. Alternatively, a conductive adhesive or the like in which a conductive filler such as silver, carbon, or ITO is filled with a resin can be used. Aluminum wire or gold wire is preferable in consideration of workability. Hereinafter, embodiments of the present invention will be described in detail, but it is needless to say that the present invention is not limited thereto.

【0043】[0043]

【実施例】【Example】

(実施例1) 発光素子として、発光ピークが500nmのInGaN
半導体を発光層に用いたLEDチップは、洗浄されたサ
ファイア基板(401)上に、TMG(トリメチルガリウ
ム)ガス、TMI(トリメチルインジュウム)ガス、窒
素ガス及びドーパントガスをキャリアガスと共に流し、
MOCVD法で窒化物系化合物半導体を成膜させること
により形成させた。成膜時に、ドーパントガスとしてS
iH4とCp2Mgと、を切り換えることによってn型導
電性やp型導電性を有する窒化ガリウム半導体を形成さ
せる。発光素子としては、n型導電性を有する窒化ガリ
ウム半導体であるコンタクト層(403)と、p型導電性を
有する窒化ガリウムアルミニウム半導体であるクラッド
層(405)、p型導電性を有するコンタクト層(406)を形成
させた。n型導電性を有するコンタクト層(403)と、p
型導電性を有するクラッド層(405)との間に厚さ約3n
mであり、単一量子井戸構造とされるノンドープInG
aNの活性層(404)を形成した。(なお、サファイア基
板上(401)には、低温で窒化ガリウムを形成させバッフ
ァ層(402)としてある。)同一半導体表面側から正極(40
7)(408)及び負極(409)の電極を取るためにn型半導体で
あるコンタクト層(403)の一部までp型半導体層側から
半導体層を部分的に除去させてある。除去され露出した
n型コンタクト層となる半導体(403)表面には、活性層
(404)の厚みを越える厚さの電極(409)がスパッタリング
法により形成されている。他方、p型コンタクト層上に
は透明電極及びパッド電極を形成させてある。こうして
出来上がった半導体ウエハーをスクライブラインを引い
た後、外力により分割させ発光素子として青緑色が発光
可能なLEDチップを形成させた。LEDチップに電力
を供給すると青緑色光が発光可能なLEDチップが形成
された。発光しているLEDチップの放射方向を調べた
結果、n型コンタクト層上に形成された電極は、活性層
から放出される光を遮光する。発光観測面側から見て、
活性層(404)から放出された光のうちn型電極(409)の延
長方向には発光が少なく最も暗く観測された。
Example 1 InGaN having a light emission peak of 500 nm was used as a light emitting element.
An LED chip using a semiconductor as a light emitting layer is obtained by flowing a TMG (trimethyl gallium) gas, a TMI (trimethyl indium) gas, a nitrogen gas and a dopant gas together with a carrier gas on a cleaned sapphire substrate (401).
It was formed by forming a nitride-based compound semiconductor by MOCVD. During film formation, S is used as a dopant gas.
A gallium nitride semiconductor having n-type conductivity or p-type conductivity is formed by switching between iH 4 and Cp 2 Mg. As the light-emitting element, a contact layer (403) which is a gallium nitride semiconductor having n-type conductivity, a cladding layer (405) which is a gallium aluminum nitride semiconductor having p-type conductivity, and a contact layer having p-type conductivity ( 406). a contact layer (403) having n-type conductivity;
Approximately 3 n thick between the cladding layer (405) having mold conductivity
m, and a non-doped InG having a single quantum well structure.
An active layer (404) of aN was formed. (Note that gallium nitride is formed at a low temperature on the sapphire substrate (401) to form a buffer layer (402).) From the same semiconductor surface side, the positive electrode (40) is formed.
7) The semiconductor layer is partially removed from the p-type semiconductor layer side to a part of the contact layer (403) which is an n-type semiconductor in order to take the electrodes of (408) and the negative electrode (409). An active layer is formed on the surface of the semiconductor (403) which is removed and becomes an n-type contact layer.
An electrode (409) having a thickness exceeding the thickness of (404) is formed by a sputtering method. On the other hand, a transparent electrode and a pad electrode are formed on the p-type contact layer. After a scribe line was drawn on the semiconductor wafer thus completed, the wafer was divided by an external force to form an LED chip capable of emitting blue-green light as a light emitting element. An LED chip capable of emitting blue-green light when power was supplied to the LED chip was formed. As a result of examining the radiation direction of the emitting LED chip, the electrode formed on the n-type contact layer blocks light emitted from the active layer. Seen from the emission observation side,
Of the light emitted from the active layer (404), light emission was observed in the direction of extension of the n-type electrode (409) and was the darkest.

【0044】銀メッキした鉄入り銅製のリード端子(10
3)(104)の先端にカップ(410)を有するマウント・リード
(103)にLEDチップ(102)をエポキシ樹脂でダイボンデ
ィングした。マウント・リード(103)に設けられたLE
Dチップ(102)の配置は、リード端子(103)(104)間方向
とLEDチップ(102)の電極(408)(409)間方向とが略垂
直に配置させてある。LEDチップ(102)の各電極(408)
(409)とマウント・リード(103)及びインナー・リード(1
04)とをそれぞれ直径が30μmの金線(105)でワイヤー
ボンディングし電気的導通を取った。
The silver-plated iron-containing copper lead terminals (10
3) Mount lead with cup (410) at the tip of (104)
The LED chip (102) was die-bonded to (103) with an epoxy resin. LE provided on the mount lead (103)
The arrangement of the D chip (102) is such that the direction between the lead terminals (103) and (104) is substantially perpendicular to the direction between the electrodes (408) and (409) of the LED chip (102). Each electrode (408) of LED chip (102)
(409), mount lead (103) and inner lead (1
04) was wire-bonded with a gold wire (105) having a diameter of 30 μm to obtain electrical continuity.

【0045】一方、モールド部材(101)の金型として、
第1の曲率半径(上方)、第3、第4の曲率半径(左右
方向)及び第2の曲率半径(下方)の大きさが第1の曲
率半径の大きさ<第3の曲率半径の大きさ=第4の曲率
半径の大きさ<第2の曲率半径の大きさの関係を満たす
凸状の透光性モールド部材(101)が形成可能な凹部を形
成させている。
On the other hand, as a mold of the mold member (101),
The magnitude of the first radius of curvature (upper), the third and fourth radii of curvature (left and right), and the second radius of curvature (lower) are smaller than the magnitude of the first radius of curvature <the magnitude of the third radius of curvature. A concave portion is formed in which a convex translucent mold member (101) that satisfies the relationship of (a) = the size of the fourth radius of curvature <the size of the second radius of curvature is formed.

【0046】凹部内に活性層(404)からの光を遮光する
n型電極(409)と第2の曲率半径を持った曲面とが最も
近づくようにLEDチップ(102)が配置されたリード端
子(103)(104)を配置し、エポキシ樹脂を注入した。エポ
キシ樹脂を140℃5時間で硬化させた。形成されたモ
ールド部材(101)の先端(201)は、LEDチップ(102)の
光軸上に配置されている。
A lead terminal on which an LED chip (102) is arranged so that an n-type electrode (409) for blocking light from the active layer (404) and a curved surface having a second radius of curvature are closest to each other in the recess. (103) and (104) were arranged, and an epoxy resin was injected. The epoxy resin was cured at 140 ° C. for 5 hours. The tip (201) of the formed mold member (101) is arranged on the optical axis of the LED chip (102).

【0047】形成された発光ダイオードは、透光性モー
ルド部材(101)の先端(201)を通る光軸を含む断面を構成
する先端(201)から端部(202)までの第1の曲率半径の大
きさが約3であり、先端(201)から他方の端部(203)まで
の第2の曲率半径の大きさが約3.75である。また、
前記断面と垂直をなす光軸を含む断面を構成する先端(2
01)から端部(204)までの第3の曲率半径及び先端(201)
から他方の端部(205)までの第4の曲率半径の大きさ
が、それぞれ約3.5とさせてある。また、LEDチッ
プ(102)とモールド部材(101)の配置は、LEDチップ(1
01)から放出されてカップ(410)で反射した光が最も暗い
方向にモールド部材(101)の曲率半径の小さい面が配置
されている。
The formed light emitting diode has a first radius of curvature from the tip (201) to the end (202) constituting a cross section including the optical axis passing through the tip (201) of the translucent mold member (101). Is about 3 and the size of the second radius of curvature from the tip (201) to the other end (203) is about 3.75. Also,
The tip (2) that constitutes a section including an optical axis perpendicular to the section
Third radius of curvature and tip (201) from 01) to end (204)
The magnitude of the fourth radius of curvature from to the other end (205) is about 3.5. In addition, the arrangement of the LED chip (102) and the mold member (101) is based on the LED chip (1).
The surface of the mold member (101) having a small radius of curvature is arranged in a direction in which the light emitted from the (01) and reflected by the cup (410) is the darkest.

【0048】形成された発光ダイオードに電力を供給し
て、左右の配向特性方向及び上下の配向特性を調べた。
発光強度が最も高いところを100%とし相対発光強度
を図6に示す。上方向の光が少なく左右及び下方向に視
野角が広い高輝度発光ダイオードとすることができるこ
とが確認できた。
Power was supplied to the formed light emitting diode, and the left and right orientation characteristic directions and the upper and lower orientation characteristics were examined.
FIG. 6 shows the relative luminous intensity assuming that the highest luminous intensity is 100%. It was confirmed that a high-brightness light-emitting diode with little upward light and a wide viewing angle in the left, right, and downward directions could be obtained.

【0049】 (実施例2) 透光性モールド部材(101)の先端(201)を通る光軸を含む
断面を構成する先端(201)から端部(202)までの第1の曲
率半径の大きさ(楕円の短軸)が約3.2であり、長軸
は約4.1とする。先端(201)から他方の端部(203)まで
の第2の曲率半径の大きさ(楕円の短軸)が約3.6で
あり、長軸が約4.55とする。また、前記断面と垂直
をなす光軸を含む断面を構成する先端(201)から端部(20
4)までの第3の曲率半径(楕円の短軸)及び先端(201)
から他方の端部(205)までの第4の曲率半径(楕円の短
軸)の大きさが、それぞれ約3.5とさせる。また、こ
の楕円の長軸を4.35とした楕円で表される非球面と
した以外は実施例1と同様にして発光ダイオードを形成
させた。
(Example 2) The first radius of curvature from the tip (201) to the end (202) constituting a cross section including the optical axis passing through the tip (201) of the translucent mold member (101) The length (short axis of the ellipse) is about 3.2, and the long axis is about 4.1. The magnitude of the second radius of curvature (the short axis of the ellipse) from the tip (201) to the other end (203) is about 3.6, and the long axis is about 4.55. Further, from the tip (201) to the end (20), which constitutes a section including the optical axis perpendicular to the section.
The third radius of curvature (short axis of the ellipse) up to 4) and the tip (201)
The magnitude of the fourth radius of curvature (short axis of the ellipse) from to the other end (205) is about 3.5. Further, a light emitting diode was formed in the same manner as in Example 1, except that the major axis of the ellipse was 4.35, and the aspheric surface was represented by an ellipse.

【0050】形成された発光ダイオードのモールド形状
は、先端を通る光軸を含む透光性モールド部材の断面を
構成する先端から端部までを含む第1のレンズ倍率、先
端から他方の端部までを含む第2のレンズ倍率、光軸を
含む前記断面と垂直をなす断面を構成する先端から端部
までを含む第3のレンズ倍率及び先端から他方の端部ま
でを含む第4のレンズ倍率がそれぞれ、第2のレンズ倍
率<第3のレンズ倍率=第4のレンズ倍率<第1のレン
ズ倍率の関係を満たしてある。なお、形成された発光ダ
イオードを発光観測面側から観測するとモールド部材の
外周連続した曲線を構成すると共に第1、第3及び第4
の曲率半径を含む上方の曲面は楕円を構成するのに対
し、第2、第3及び第4の曲率半径を含む下方の曲面は
半円を構成している。また、楕円は、半円の半径よりも
小さい短軸を有ている。
The molded shape of the formed light emitting diode has a first lens magnification including a section from the tip to the end which constitutes a cross section of the translucent mold member including the optical axis passing through the tip, from the tip to the other end. The second lens magnification including the optical axis, the third lens magnification including the cross section perpendicular to the cross section including the optical axis from the front end to the end, and the fourth lens magnification including the front to the other end include Each satisfies the relationship of second lens magnification <third lens magnification = fourth lens magnification <first lens magnification. When the formed light emitting diode is observed from the light emission observation surface side, the light emitting diode forms a continuous curve on the outer periphery of the mold member, and the first, third and fourth curves are formed.
The upper curved surface including the radius of curvature forms an ellipse, while the lower curved surface including the second, third, and fourth radii of curvature forms a semicircle. Also, the ellipse has a minor axis smaller than the radius of the semicircle.

【0051】こうして形成された発光ダイオードの発光
特性は実施例1と同様に左右、下方向に広く上方向に狭
くすることができる。形成された発光ダイオードの指向
特性をそれぞれ揃えて発光観測面側から見て円状となる
よう基板に300個配置させる。基板に設けられた配線
パターンと各発光ダイオードが点灯可能なように半田付
けさせる。これを樹脂筐体に配置させると共に樹脂筐体
の前面に透光性のケースを設けてある。なお、発光ダイ
オード間には外来光からの光を吸収してコントラスト比
を向上させ得るための西日対策パネルを配置させてあ
る。西日対策パネルには暗色系の黒色に着色した樹脂繊
維を植毛加工させてある。発光ダイオードが配置された
基板、西日対策パネルを樹脂筐体と透光性のケース内に
配置すると共に固定してパッキンで封止することにより
LEDユニットを構成する。
The light emitting characteristics of the light emitting diode thus formed can be widened left and right, downward, and narrowed upward as in the first embodiment. The formed light emitting diodes are arranged on the substrate so that the directivity characteristics of the formed light emitting diodes are aligned and circular when viewed from the light emission observation surface side. The wiring pattern provided on the substrate and each light emitting diode are soldered so as to be lit. This is arranged in a resin housing, and a translucent case is provided on the front surface of the resin housing. It should be noted that between the light emitting diodes, there is arranged a West Japan countermeasure panel for absorbing external light to improve the contrast ratio. The West Japan countermeasures panel has a flocked resin fiber colored dark black. The LED unit is configured by arranging the substrate on which the light emitting diodes are arranged and the sun protection panel in a resin case and a translucent case, and fixing and sealing them with packing.

【0052】こうして形成されたLEDユニットをアル
ミの灯箱に収納することにより信号機を形成させた。信
号機の各発光ダイオードに電力を供給することにより上
方向に光量を抑制しつつ正面高度が高く且つ、左右及び
下方向に光量が多い信号機とすることができる。
The signal unit was formed by housing the LED unit thus formed in an aluminum light box. By supplying power to each light emitting diode of the traffic light, a traffic light having a high front elevation and a large light volume in the left, right, and downward directions while suppressing the light amount in the upward direction can be provided.

【0053】 (実施例3) LEDチップを構成するInの組成を少なくして青色が
発光可能な窒化物半導体からなる発光素子とすると共に
LEDチップ上にセリウムで付活されたイットリウム・
アルミニウム・ガーネット系蛍光体としてY0.8Gd0.2
Al512:Ceが含有されたエポキシ樹脂をマウント
・リードのカップ内に配置した以外は実施例1と同様に
して発光ダイオードを構成させた。形成された発光ダイ
オードは実施例1とほぼ同様に中心光度が高く、左右及
び下方向の半値角の広い発光ダイオードを構成すること
ができた。また、LEDチップからの青色光と共に蛍光
体からの黄色光が発光され白色が観測された。
Example 3 A light-emitting element made of a nitride semiconductor capable of emitting blue light by reducing the In composition of the LED chip was used, and yttrium-activated cerium on the LED chip was used.
Y 0.8 Gd 0.2 as aluminum-garnet phosphor
A light emitting diode was formed in the same manner as in Example 1 except that an epoxy resin containing Al 5 O 12 : Ce was disposed in the cup of the mount lead. The light-emitting diode thus formed has a high center luminous intensity almost in the same manner as in Example 1, and a light-emitting diode having a wide half value angle in the left, right, and downward directions can be formed. In addition, yellow light was emitted from the phosphor together with blue light from the LED chip, and white light was observed.

【0054】[0054]

【発明の効果】本発明は、モールド部材を特定形状とす
ることにより、不要な上方の光量を低減させる一方左右
方向及び下方向において広視野角に発光可能な高輝度発
光ダイオードとするものである。また、外来光からの反
射の影響が少なく信号用に優れた発光ダイオードとする
ことができるものである。
According to the present invention, a high-intensity light emitting diode capable of emitting light with a wide viewing angle in the left-right direction and the downward direction while reducing the unnecessary upper light amount by forming the mold member into a specific shape. . In addition, a light emitting diode which is less affected by reflection from extraneous light and is excellent in signal use can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、発光観測面側から見た本発明の発光ダ
イオードを示す模式的正面図である。
FIG. 1 is a schematic front view showing a light emitting diode of the present invention viewed from a light emission observation surface side.

【図2】図2は本発明の発光特性を示す模式的断面図で
あり、図2(A)は図1のX−X方向の模式的説明図を
示し、図2(B)は図1のY−Y方向の模式的説明図を
示す。
FIG. 2 is a schematic cross-sectional view showing light emission characteristics of the present invention, FIG. 2 (A) is a schematic explanatory view in the XX direction of FIG. 1, and FIG. 2 (B) is FIG. 5 is a schematic explanatory view in the YY direction of FIG.

【図3】図3は、本発明の発光ダイオードの正面からみ
た各構成部材の配置を表し図2のZ−Z方向の模式的横
断面図を示す。
FIG. 3 is a schematic cross-sectional view in ZZ direction of FIG. 2 showing an arrangement of each component viewed from the front of the light emitting diode of the present invention.

【図4】図4は、本発明に用いられるカップに配置され
た発光素子の発光特性を示す模式的説明図であり、図4
(A)は模式的部分正面図、図4(B)は図4(A)の
X−X断面図である。
FIG. 4 is a schematic explanatory view showing light emission characteristics of a light emitting element arranged in a cup used in the present invention.
4A is a schematic partial front view, and FIG. 4B is a sectional view taken along line XX of FIG. 4A.

【図5】図5は、本発明の他の発光ダイオードを示し、
図5(A)は発光ダイオードの正面からみた各構成部材
の配置を表した模式図であり、図5(B)は図5(A)
のX−X方向の模式的断面図を示し、図5(C)は図5
(A)のY−Y方向の模式的断面図を示す。
FIG. 5 shows another light emitting diode of the present invention,
FIG. 5A is a schematic diagram showing the arrangement of each component viewed from the front of the light emitting diode, and FIG.
5 (C) shows a schematic cross-sectional view in the XX direction of FIG.
FIG. 2A is a schematic cross-sectional view in the YY direction.

【図6】図6(A)は、本発明の発光ダイオードの上下
方向の配向特性を示し、図6(B)は、本発明の発光ダ
イオードの左右方向の配向特性を示す。
FIG. 6A shows the vertical alignment characteristics of the light emitting diode of the present invention, and FIG. 6B shows the horizontal alignment characteristics of the light emitting diode of the present invention.

【図7】図7は、本発明と比較のために示す発光ダイオ
ードの模式図であり、図7(A)は、発光ダイオードの
正面からみた各構成部材の配置を表した模式図であり、
図7(B)は図7(A)のX−X方向の模式的断面図を
示し、図7(C)は図7(A)のY−Y方向の模式的断
面図を示す。
FIG. 7 is a schematic view of a light emitting diode shown for comparison with the present invention, and FIG. 7 (A) is a schematic view showing an arrangement of each component viewed from the front of the light emitting diode;
7B shows a schematic cross-sectional view in the XX direction of FIG. 7A, and FIG. 7C shows a schematic cross-sectional view in the YY direction of FIG. 7A.

【符号の説明】[Explanation of symbols]

101、501・・・モールド部材 102、502・・・発光素子 103、104、503、504・・・リード端子 105、505・・・電気的接続部材 201・・・透光性モールド部材の先端 202・・・第1の曲率半径の端部 203・・・第2の曲率半径の端部 204・・・第3の曲率半径の端部 205・・・第4の曲率半径の端部 401・・・サファイア基板 402・・・バッファ層 403・・・n型コンタクト層 404・・・活性層 405・・・p型クラッド層 406・・・p型コンタクト層 407・・・全面電極 408・・・パッド電極 409・・・n型電極 410・・・カップの内壁 101, 501: Mold member 102, 502: Light emitting element 103, 104, 503, 504: Lead terminal 105, 505: Electrical connection member 201: Tip 202 of the translucent mold member ... End of the first radius of curvature 203 ... End of the second radius of curvature 204 ... End of the third radius of curvature 205 ... End of the fourth radius of curvature 401・ Sapphire substrate 402 ・ ・ ・ Buffer layer 403 ・ ・ ・ N-type contact layer 404 ・ ・ ・ Active layer 405 ・ ・ ・ P-type cladding layer 406 ・ ・ ・ P-type contact layer 407 ・ ・ ・ Full surface electrode 408 ・ ・ ・ Pad Electrode 409: n-type electrode 410: Inner wall of cup

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 少なくとも2つのリード端子(103)(104)
と電気的に接続された発光素子(102)と、該発光素子(10
2)を封止し先端(201)が凸状の光学レンズであり、且つ
該光学レンズの光軸がレンズ底面に対して略垂直となる
透光性モールド部材(101)とを有する信号用発光ダイオ
ードであって、 前記先端(201)を通る光軸を含む透光性モールド部材(10
1)の断面を構成する先端(201)から端部(202)までの第1
の曲率半径及び先端(201)から他方の端部(203)までの第
2の曲率半径と、光軸を含む前記断面と垂直をなす断面
を構成する先端(201)から端部(204)までの第3の曲率半
径及び先端(201)から他方の端部(205)までの第4の曲率
半径が、それぞれ次の関係を満たすことを特徴とする
号用発光ダイオード。第1の曲率半径の大きさ<第3の
曲率半径の大きさ≦第2の曲率半径の大きさ、第1の曲
率半径の大きさ<第4の曲率半径の大きさ≦第2の曲率
半径の大きさ、第3の曲率半径の大きさと第4の曲率半
径の大きさが略等しい。
At least two lead terminals (103) (104)
A light emitting element (102) electrically connected to the light emitting element (10
2) is an optical lens that seals and the tip (201) is convex , and
A light- emitting diode for signals having a light-transmitting mold member (101) in which the optical axis of the optical lens is substantially perpendicular to the lens bottom surface , wherein the light- transmitting mold includes an optical axis passing through the tip (201). Members (10
The first section from the tip (201) to the end (202) constituting the cross section of 1)
Radius of curvature and a second radius of curvature from the tip (201) to the other end (203), and from the tip (201) to the end (204), which constitutes a cross section perpendicular to the cross section including the optical axis. Shin third fourth radius of curvature from the curvature radius and the distal end (201) to the other end (205), respectively and satisfy the following relationship
No. light emitting diode. The magnitude of the first radius of curvature <the third
Radius of curvature ≤ second radius of curvature, first tune
Magnitude of radius of curvature <size of fourth radius of curvature ≦ second curvature
Radius size, third radius of curvature radius and fourth radius of curvature half
The diameters are almost equal.
【請求項2】 光軸上の発光観測面側から見て第3及び
第4の曲率半径を構成する断面と、前記リード端子間(1
03)、(104)の配置方向とが略平行である請求項1記載の
信号用発光ダイオード。
2. A method according to claim 1, wherein the section between the third and fourth radii of curvature as viewed from the light emission observation surface side on the optical axis and the lead terminal (1).
3. The arrangement according to claim 1, wherein the arrangement directions of (03) and (104) are substantially parallel.
Light emitting diode for signal .
【請求項3】 前記リード端子(103)は、発光素子(102)
からの光を反射するカップ(410)を有すると共に該カッ
プ(401)内に光軸上の発光観測面側から見て、透光性モ
ールド部材(101)の第2の曲率半径、第3の曲率半径及
び第4の曲率半径側よりも第1の曲率半径側の発光出力
が高くなるように発光素子(102)を配置させた請求項1
記載の信号用発光ダイオード。
3. The lead terminal (103) includes a light emitting element (102).
And a second radius of curvature of the translucent mold member (101) in the cup (401) when viewed from the light emission observation surface side on the optical axis. The light emitting element (102) is arranged so that a light emission output on a first radius of curvature side is higher than a radius of curvature and a fourth radius of curvature side.
The light emitting diode for a signal according to the above.
【請求項4】 少なくとも2つのリード端子と電気的に
接続された発光素子と、該発光素子を封止し先端が凸状
の光学レンズであり、且つ該光学レンズの光軸がレンズ
底面に対して略垂直となる透光性モールド部材とを有す
複数の発光ダイオードを配置させた基板と、該基板を
灯箱内に収納させた信号機であって、 前記発光ダイオードは先端を通る光軸を含む透光性モー
ルド部材の断面を構成する先端から端部までの第1の曲
率半径及び先端から他方の端部までの第2の曲率半径
と、光軸を含む前記断面と垂直をなす断面を構成する先
端から端部までの第3の曲率半径及び先端から他方の端
部までの第4の曲率半径が以下の関係を満たすと共に各
発光ダイオードを第1の曲率半径側が信号機の上方向と
なるように配置したことを特徴とする信号機。第1の曲
率半径の大きさ<第3の曲率半径の大きさ≦第2の曲率
半径の大きさ、第1の曲率半径の大きさ<第4の曲率半
径の大きさ≦第2の曲率半径の大きさ、第3の曲率半径
の大きさと第4の曲率半径の大きさが略等しい。
4. A light emitting element electrically connected to at least two lead terminals, an optical lens encapsulating the light emitting element and having a convex tip , and the optical axis of the optical lens is a lens.
A substrate on which a plurality of light emitting diodes having a translucent mold member substantially perpendicular to the bottom surface are arranged; and
A traffic signal housed in a light box , wherein the light emitting diode has a first radius of curvature from a tip to an end and a second end from the tip constituting a cross section of a translucent mold member including an optical axis passing through the tip. And a third radius of curvature from the tip to the end and a fourth radius of curvature from the tip to the other end that constitute a section perpendicular to the section including the optical axis. Is satisfied, and each light emitting diode is positioned such that the first radius of curvature is on the upper side of the traffic light.
Traffic signal, characterized in that it has placed so. No. 1 song
Radius of curvature <third radius of curvature <second curvature
Radius size, first curvature radius size <fourth curvature half
Diameter size ≦ size of second radius of curvature, third radius of curvature
Is substantially equal to the size of the fourth radius of curvature.
JP26702798A 1997-09-22 1998-09-21 Light emitting diode for signal and traffic light using the same Expired - Fee Related JP2980121B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26702798A JP2980121B2 (en) 1997-09-22 1998-09-21 Light emitting diode for signal and traffic light using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-257382 1997-09-22
JP25738297 1997-09-22
JP26702798A JP2980121B2 (en) 1997-09-22 1998-09-21 Light emitting diode for signal and traffic light using the same

Publications (2)

Publication Number Publication Date
JPH11154766A JPH11154766A (en) 1999-06-08
JP2980121B2 true JP2980121B2 (en) 1999-11-22

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