JP2980058B2 - Columnar metal part, method for manufacturing the same, and apparatus for manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a roller-shaped (cylindrical) mechanical part used for AV equipment, transportation and transportation. In particular, the present invention relates to a roller component (cylindrical metal component) which is used for rotating and reciprocating motion of a bearing, a roller, a rotating shaft, a piston and the like, and which requires wear resistance and sliding characteristics.

[0002]

2. Description of the Related Art Sliding members such as bearings, rollers, rotating shafts, and pistons used in AV equipment, transportation / transportation equipment, etc. are in constant contact with mating members. Therefore, it is a component that is liable to be worn due to friction with a partner material. By wear
The product life is shortened and the accuracy of the parts is reduced. Therefore, with respect to these cylindrical members, it is desired to develop members that are hard to wear.

[0003] Generally, in a member having insufficient wear resistance,
In order to obtain wear resistance, a method of coating a hard film such as TiN on the surface of a member is often used. On the other hand, a steel material such as SUJ or SUS420J2 is generally used as a base material of the sliding component in terms of cost and workability. However, these materials have a disadvantage that they are deteriorated when heated to 200 ° C. or higher. In order to coat TiN, it is necessary to heat the base material to a temperature of 400 ° C. or higher. Therefore, the method of coating TiN to increase abrasion resistance is based on ordinary SUJ or SUS420J.
It cannot be used for 2-rollers.

In order to improve the wear resistance of SUJ or SUS420J2 parts, a thin film material that can be formed at a temperature of 200 ° C. or less is required. As a hard material that can be coated in a temperature range of 200 ° C. or less, a hard carbon film can be used. Since it has good adhesion to many semiconductors and insulators, it is used as a coating material for semiconductors and insulators. However, the hard carbon film has very poor adhesion to metal.
SU using ordinary CVD, vapor deposition, sputtering, etc.
Even if a hard carbon layer is formed on J or SUS420J2, it is immediately peeled off. In order to solve such difficulties, a base material made of SUJ or SUS420J2 was
There is a report that a hard carbon layer was coated by a method called a vapor deposition method. The result is a structure of metal matrix / hard carbon layer.

Further, as a method for improving the adhesion between the base material and the hard carbon layer, JP-A-56-6920 and JP-A-63
No. 9543 proposes a method in which an intermediate layer made of a silicon crystal film, a silicon dioxide crystal film, a germanium crystal film, or the like is interposed between a metal base material and a hard carbon layer.

[0006]

SUMMARY OF THE INVENTION Normal vapor deposition and CVD
According to the method, although the productivity is excellent, the material is not ion but in an atomic or molecular state and has little kinetic energy, so that it does not enter the inside of the metal. In the ion beam evaporation method, a hydrocarbon such as methane is converted into plasma in an ion source, extracted as an ion beam accelerated by the operation of an extraction electrode system, and irradiated to an object to be processed. Since the acceleration energy is large, carbon penetrates into the object to be processed as compared with vapor deposition or the like. The kinetic energy activates the metal surface, so that the adhesion between the carbon material and the base material is good. Therefore, the metal can be coated with the hard carbon layer even at a temperature of 200 ° C. or less.

[0007] However, the ion beam evaporation method has the disadvantage that the film formation rate is low and the number of pieces that can be processed at one time is small, and the productivity is low. Since energy is required to convert hydrocarbons into plasma and large power is required to convert them into ion beams, the ion beam current cannot be too large. Even if the ion beam current is increased by improving the apparatus, the mechanical and thermal shocks applied to the metal surface may be excessive, which may cause the metal surface to be roughened or the film-formed portion to be peeled again. . As long as the ion beam evaporation method is used, the productivity cannot be increased to a certain degree. It is desirable to form the hard carbon layer with good adhesion to the metal base material by another method.

On the other hand, the method of providing a crystal intermediate layer described in JP-A-56-6920 and JP-A-63-9543 improves the adhesion of the film at low speed and low load. However, in a member that slides at a high speed or an application under a high load, the adhesion is still poor and the hard carbon layer is peeled off. Further, in the method of providing the intermediate layer in this manner, the equipment cost is high because the intermediate layer coating device and the hard carbon layer coating device are different. Since processing time is long, the problem of processing power also arises. Further, after coating the intermediate layer, dirt may adhere to the intermediate layer because it is in the air until the hard carbon layer is coated. In this case, the hard carbon layer is easily peeled. In the case of the germanium intermediate layer coating, there is also a problem that germanium is expensive.

It is an object of the present invention to provide a method and an apparatus for solving the problems of the conventional method and for coating a cylindrical member (roller) with a hard carbon film with good adhesion, low temperature and low cost with good productivity. It is an object of the present invention to provide a manufactured roller component.

[0010]

According to the method of the present invention, an amorphous silicon intermediate layer is provided on the surface of a cylindrical metal base material,
A hard carbon layer is formed thereon. Preferably,
An amorphous silicon intermediate layer having a thickness of about 5 nm to 500 nm is formed on the base material, and a 100 nm
A hard element layer of about 1 μm is formed. The amorphous silicon intermediate layer is formed by a PVD method such as an ion plating method or an ion beam assisted vapor deposition method. Further, a hard carbon layer is coated on the amorphous silicon intermediate layer by a plasma CVD method without breaking the vacuum state in the film forming apparatus.

It is important to use amorphous silicon as the intermediate layer and to form the intermediate layer and the hard carbon layer continuously in a vacuum state. The adhesion between the base material and the hard carbon film can be remarkably improved by the interposition of the amorphous silicon intermediate layer. The treatment of the amorphous silicon intermediate layer and the hard carbon layer in the same apparatus without returning to the atmosphere eliminates the possibility of contamination and ensures the adhesion between the intermediate layer and the hard carbon layer.

[0012]

According to the present invention, the cylindrical metal part is made of a metal base material /
The structure is an amorphous silicon intermediate layer / hard carbon layer. Japanese Patent Application Laid-Open No. 56-6920 proposes a silicon intermediate layer. However, even if silicon is interposed, the adhesion of the outermost coating may not be improved. Actually, there is a remarkable variation in the adhesion between the base material and the outer coating. Therefore, the present inventors have investigated in detail the affinity between the film structure of the silicon intermediate layer and the hard carbon film. As a result, it was found that when silicon was amorphous, it had good affinity and good adhesion. Conversely, it was found that when silicon was a crystalline film, the affinity was poor and the hard carbon film was easily peeled off.

A hard carbon film was coated on the single-crystal silicon film, and the adhesion of the hard carbon film was examined by examining the peeling state of the hard carbon film around the indentation using a Knoop hardness meter indenter. Peeling started when the load of the indenter was 25 g. Further, a hard carbon film was coated on the amorphous silicon film, and the adhesion was examined with the same Knoop hardness meter. It was found that even if the load of the indenter was increased to 250 g, the hard carbon film did not peel off. In other words, the same silicon as the intermediate layer must be not crystalline but amorphous.

The reason may be as follows. Since the upper hard carbon film has an amorphous structure, the bonding property is poor if the intermediate layer is crystalline. In accordance with the upper hard carbon layer, the intermediate layer also has higher affinity for amorphous silicon than for amorphous silicon. Therefore, the present invention uses amorphous silicon as the intermediate layer. That is, the present invention proposes a structure of hard carbon layer / amorphous silicon intermediate layer / metal.

The thickness of the amorphous silicon intermediate layer employed in the present invention ranges from 50 (5 nm) to 5000 (500 n).
m). If the thickness is less than 50 ° (5 nm), it is difficult to completely cover the surface of the base material with silicon.
The effect of introducing the i intermediate layer does not appear remarkably. The lower limit of the thickness of the intermediate layer is determined by this. Even if the silicon film thickness is several μm, there is no problem such as mechanical strength. However, in consideration of productivity, the thinner the film thickness, the better. Particularly desirable from the viewpoint of productivity is 5 nm to 300 nm.
nm.

For forming the amorphous silicon intermediate layer, for example, a PVD method is used. These include an ion plating method and an ion beam assisted vapor deposition method. The ion plating method is a method of depositing silicon in a glow discharge using a rare gas such as an Ar gas. Silicon is put in a crucible and heated and evaporated with an electron beam or the like. Since the Ar ions are accelerated and collide with the metal base material to activate the surface by kinetic energy, the silicon and the base material adhere well even when the base material is at a low temperature. In addition, the base material needs to be at a low temperature in order to make silicon have an amorphous structure.

The ion beam assisted vapor deposition method is sometimes called an ion vapor deposition method. A rare gas plasma such as Ar is generated in an ion source, accelerated, and irradiated to a metal base material. Silicon is put in a crucible and heated and evaporated by electron beam heating or the like. The kinetic energy and current amount of the rare gas can be freely changed. The surface of the base material is activated by the energy of ions such as Ar. Even at low temperatures, silicon adheres to the base material. As in the case of the ion plating method, it is desirable that the base material has a low temperature in order to obtain silicon having an amorphous structure. However, both the ion source and the evaporation source must be housed in the same vacuum chamber.

In any case, the silicon itself is ion-beamed.
It is different from the ion beam evaporation method for forming a beam. Silicon flies as atomic vapor. Kinetic energy is low. However, since the rare gas collides with the base material with high kinetic energy as ions, it activates the surface and enhances the adhesion of silicon. Either method can form the silicon intermediate layer on the metal base material. However, since the irradiation area is limited in the ion beam assist method, the charge per batch is limited.
The ion plating method is more suitable for increasing the amount of dicing.

The uppermost layer is a hard carbon layer. The hard carbon layer is made of diamond-like carbon, amorphous carbon, i-
It is called C or the like. It is an amorphous carbon film. It is neither crystalline carbon such as graphite nor diamond itself. The properties of the hard carbon layer are often similar to diamond. In particular, the loop hardness is 2000 to 10000k
g / mm ² , a very hard material. In the present invention, the hard metal layer is coated on the surface of the cylindrical metal part (roller) to prevent wear of the cylindrical metal part. Since the coefficient of friction is reduced by the hard coating layer, it is possible to prevent damage to the mating parts that come into contact at the same time. This has a great economic effect.

The thickness of the hard carbon layer is 1000Å (100
nm) to 10000 ° (1 μm). 100 to be sufficient as a protective film for sliding parts
A thickness of 0 ° or more is required. On the contrary, it is not desirable to be too thick in terms of productivity. Further, since the hard carbon layer has a large compressive stress, if the film thickness is large, the stress becomes strong and the hard carbon layer is easily peeled. Therefore, it is better to be thinner than 1 μm.

For forming the hard carbon layer, for example, plasma CV
Method D is used. In this method, a raw material containing carbon is made into plasma by the action of high frequency discharge, direct current discharge, microwave discharge or the like, and then deposited on a metal base material. Since the metal base material is hit with plasma, the surface can be activated. There is an advantage that a thin film forming temperature can be lower than that of a thermal CVD method or the like. Compared with the ion beam evaporation method, the plasma is the same, but the plasma is not taken out as an ion beam but is deposited directly on the base material in the same space, so that the film is formed quickly. The plasma CVD method has a film formation speed of three times or more and the number of processes per batch is several times to several tens times as compared with the ion beam evaporation method. High-speed processing dramatically improves productivity.

When the plasma CVD method and the ion beam evaporation method are generally compared, it is said that the ion beam evaporation method has better adhesion. However, in the present invention, since an amorphous silicon intermediate layer is provided, practically sufficient adhesion can be obtained even if a hard carbon layer is formed by a plasma CVD method. Through both steps, the temperature of the metal base material can be kept at 200 ° C. or lower. Since the film can be formed at a low temperature, there is no fear of deteriorating the base material. In order to improve productivity and stably obtain high adhesion, the coating of the amorphous silicon intermediate layer and the hard carbon layer should be performed continuously in the same vacuum apparatus without breaking vacuum. It is effective.

If each coating is performed by a different apparatus, each step is evacuated, a part set,
The productivity is reduced because it takes time to take out parts and the like. In addition, once at atmospheric pressure, the surface of the amorphous silicon intermediate layer is contaminated by oxygen, water vapor, dust and the like in the air. Therefore, the adhesion between the amorphous silicon intermediate layer and the hard carbon layer is reduced, and the product yield is also reduced. Therefore, in the present invention, the coating of the amorphous silicon intermediate layer and the coating of the hard carbon layer are continuously performed in the same vacuum apparatus. Since the surface of the amorphous silicon intermediate layer is retained without being contaminated and the hard carbon layer is coated thereon, it is possible to always achieve coating with excellent adhesion.

Further, for increasing the productivity or applying a high load, it is effective to coat the amorphous silicon intermediate layer and the hard carbon layer while applying a negative DC voltage to the base material. The number of particles arriving at the base material increases because positive ions such as silicon, carbon, and hydrocarbons released in a vacuum and positively charged clusters are accelerated by a negative bias.
Therefore, the film forming speed is increased, and as a result, the productivity is improved.
The negative bias effect is not the only one. Since the base material has a negative potential, the particles reaching the base material are accelerated and the kinetic energy increases. Particles having high kinetic energy and reflected by the base material etch the base material to clean the surface. Silicon and carbon implanted while having a high kinetic energy further strengthen the adhesion due to the energy. Biasing the base material negatively has this double effect.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS SUJ or SU having a diameter of 2 mm and a length of 30 mm
A two-layer coating of an amorphous silicon intermediate layer and a hard carbon layer was continuously applied to a cylindrical metal base material made of S420J2 by using the same vacuum apparatus without returning the vacuum to atmospheric pressure. For comparison, the same base material was coated with only a hard carbon layer by an ion beam evaporation method. Then, a comparison of the performance of the cylindrical metal parts and a comparison of the coating processing ability were performed. First, an outline of the coating process will be described.

[Embodiment (Example of Two-Step Coating in the Same Vacuum Apparatus)] First, the coating of the amorphous silicon intermediate layer will be described with reference to Fig. 1 showing an example of an apparatus for continuous coating according to the present invention. This is an example of an apparatus for performing continuous coating using a common vacuum chamber.

The vacuum chamber 1 is a space that can be evacuated. The disk-shaped holder 2 is formed by arranging five disks in the axial direction, and is provided with a large number of holes for accommodating rollers (cylindrical base materials) on the circumference of the end face. Base material 3 in the hole of the opposite disk
And the discs are united and attached to the holder rotating shaft 8. The holder 2 is provided above the inside of the vacuum chamber 1. The number of the holders 2 can be arbitrarily increased or decreased.
In the vicinity of the columnar metal base material 3, there is a heater for heating the metal base material 3 to an appropriate temperature. A silicon evaporation source 4 is provided below the vacuum chamber 1. This is obtained by putting a silicon material 13 into a water-cooled crucible 12. It is heated and evaporated by an electron beam or the like. Here, the illustration of the heating source is omitted for simplicity. Silicon evaporation source 4
Above is a shutter 5. This can be opened and closed, and when opened, the silicon vapor rises and can reach the upper cylindrical metal base material 3. When closed, steam is shut off.

Furthermore, there is a high-frequency electrode 6 thereon. The high frequency power is supplied by the high frequency power supply 9. A motor 7 for rotating the substrate is provided outside the vacuum chamber 1.
There is. This causes the rotating shaft 8 to pass horizontally through the vacuum chamber. The disk-shaped holder 2 is fixed to an appropriate portion of the rotating shaft 8 and rotates together with the rotating shaft 8. This is for uniformly coating all the columnar metal base materials 3. Further, a negative voltage is applied to the columnar metal base material 3 via the rotating shaft 8. A voltage in which a direct current and a high frequency are superimposed is applied between the high frequency electrode 6 and the high frequency electrode 6. The wall of the vacuum chamber 1 has a gas inlet 10 through which a rare gas such as Ar is introduced. Gas is exhausted from the exhaust port 11 connected to the vacuum exhaust device.

In order to carry out the method of the present invention, first, the surface of the cylindrical base material 3 made of SUJ or SUS420J2 was cleaned by ultrasonic cleaning with an organic solvent. In a disk holder 2 having a diameter of 30 mm, 100 columnar base materials were set between each disk, and set in the apparatus for coating a silicon intermediate layer shown in FIG. 400 in total
Processing of a cylindrical metal base material.

First, the vacuum chamber 1 was evacuated to a vacuum of 1 × 10 ⁻⁶ Torr or less. Then, the parent material was reduced to 1 by a heater.
Heated to 50 ° C. Further, 5 × 10 ⁻⁴ To Ar gas is supplied.
rr. This is turned into plasma by the action of high-frequency discharge generated between the high-frequency electrode 6 and the base material 3. The holder 2 and the columnar metal base material 3 are rotated. A negative bias of -500 V is applied to the holder 2 and the columnar metal base material 3 in advance. Since a negative voltage is applied to the base material side, positive Ar ions collide with the base material and sputter the surface of the base material to clean it. Discharge treatment was performed for 10 minutes to clean the surface of the base material.

Thereafter, evaporation of silicon was started while the high-frequency discharge was continued. The silicon put in the crucible was heated with an electron beam or the like to generate steam. Silicon vapor rises and adheres to the surface of the heated base material 3. Some vapors may be ionized by Ar ions. Since the surface of the base material is activated by the collision of Ar ions, the adhesion of silicon vapor is improved. When the film thickness reaches a desired value, the shutter 5 is closed to terminate the silicon coating. Then, while maintaining the vacuum state, the hard carbon film was continuously coated.

The coating of the hard carbon layer in the same vacuum chamber 1 as the silicon coating will be described. The degree of vacuum in the vacuum chamber 1 is increased to a vacuum of 1 × 10 ⁻⁶ Torr or less. 5 × 10 hydrogen gas H ₂ from gas inlet 10
^-4 Torr, and a high frequency was applied to the holder 2. This turns H ₂ into plasma. The hydrogen plasma collides with the cylindrical metal base material and cleans the surface thereof. After discharge cleaning for 10 minutes, the introduced gas is methane CH ₄
Switched to. CH ₄ becomes plasma by high frequency discharge, it is deposited a carbon on the surface of a cylindrical metal matrix. This is the coating of the hard carbon layer by plasma CVD. When the film thickness reaches a predetermined value, the introduction of CH ₄ is stopped, and the coating is terminated. Then, it cooled to room temperature and evaluated the life of the cylindrical metal base material taken out from this.

Further, the X-ray diffraction peaks of the five parts coated with the silicon coating and the hard carbon film from which the hard carbon film was removed were examined. No diffraction peak of crystalline silicon was observed. This confirmed that the coated silicon was amorphous.

Comparative Example In the case of ion beam evaporation For comparison, a sample in which a hard carbon film single layer was coated by an ion beam evaporation method was also manufactured. In this method, a base material is irradiated with a hydrocarbon raw material as an ion beam. Unlike the present invention, no amorphous silicon intermediate layer is provided. The apparatus used here has an ion beam diameter of 50 mm. A disk-shaped holder having a diameter of 50 mm was used. Twenty cylindrical metal base materials having a diameter of 2 mm and a length of 30 mm were set in this holder. This was charged into the inside of the apparatus, the inside of the apparatus was evacuated to a vacuum of 1 × 10 ⁻⁶ Torr or less, and then the surface was cleaned by irradiating Ar ions while rotating the holder. The conditions for the surface treatment with Ar are as follows:

[Ar Surface Treatment] The acceleration energy of Ar ions was 3 keV, the Ar beam current density was 0.5 mA / cm ^{2, and the} Ar irradiation time was 3 minutes. After the surface treatment with Ar ions, CH ₄ gas was introduced instead of Ar, and the hard carbon layer was coated under the following conditions.

[Formation of Hard Carbon Layer] Source gas CH ₄ CH ₄ ion acceleration energy: 500 eV Ion beam current density: 0.2 mA / cm ² After forming a film to a predetermined film thickness, it is cooled to room temperature and taken out to the outside. Was.

In the present invention, the formation of the amorphous silicon intermediate layer and the formation of the hard carbon layer are continuously coated using the same reaction tank. In order to individually examine the thickness and the thickness, each film was formed in a different reaction tank. Also,
The throughput was also examined to assess productivity. Table 1 shows these results and the results of the conventional example. In addition, it was confirmed from the peak of X-ray diffraction that the generated silicon was amorphous silicon.

[0038]

[Table 1]

In Table 1, the leftmost column shows the thickness of the hard carbon layer, the production method, and the processing capacity. The second column shows the thickness, manufacturing method and processing capacity of the amorphous silicon intermediate layer. The third column shows the life. For the seventh sample from the top, the thickness of the amorphous silicon intermediate layer was set to 500 °, and the thickness of the hard carbon layer was changed to 500 ° to 12000 °. 8
In the 16th to 16th samples, the thickness of the hard carbon layer was 3000
And the film thickness of the amorphous silicon intermediate layer is 0Å-10
000. The seventeenth sample was obtained by ion beam evaporation which belongs to the conventional method.

The service life is a result of evaluation by assembling the component into an AV device and performing a test. The life is expressed by the ratio of the life of the uncoated SUJ or SUS420J2 base material to one. The processing capacity per unit time for each process is indicated by the number. It can be seen that when the thickness of the hard carbon layer is 1000 ° or more, the life of the cylindrical metal part is significantly increased as compared with the case of the uncoated metal part. When the thickness of the hard carbon layer exceeds 1000 ° when the amorphous silicon intermediate layer is 500 °, the life of the columnar metal part is increased seven times or more. However, peeling occurred when the thickness of the hard carbon layer exceeded 10,000 ° (1 μm). This is too thick. Therefore, it can be seen that the film thickness of the hard carbon layer is optimally from 1,000 to 10,000.

As for the amorphous silicon intermediate layer,
Without this, the hard carbon layer was completely peeled off. Even if there was an amorphous silicon intermediate layer, if it was 50 ° or less, it was also peeled off. If the thickness of the amorphous silicon intermediate layer is 50 ° or more, the hard carbon layer does not peel off, and the service life is at least five times longer than that of the uncoated one. If the thickness of the amorphous silicon intermediate layer exceeds 300 °, the bonding strength of the hard carbon layer will be enhanced and the life will be 10 times or more. Even if the thickness of the amorphous silicon intermediate layer is increased, it does not peel off, and there is no upper limit to the thickness from the viewpoint of mechanical strength. However, if the thickness of the amorphous silicon intermediate layer is increased, the coating time will be extra and the processing capacity will be reduced. In terms of processing ability, the thickness of the amorphous silicon intermediate layer is preferably 5000 ° or less.

Therefore, assuming that the thickness of the amorphous silicon intermediate layer is d ₁ and the thickness of the hard carbon layer is d ₂ , the optimum range is 50 ° ≦ d ₁ ≦ 5000 ° (1) 1000 ° ≦ d ₂ ≦ 1 μm (2)

That is to say. In this range, the service life is at least 5 times longer than that of the uncoated product. The processing capacity is 180-250 / amorphous silicon intermediate layer.
Time. As for the hard carbon layer, 92 to 300 /
Time. In the present invention, since two steps are included, the lower the processing capacity as a whole, the lower the rate. Even outside this range, when the thickness of the hard carbon layer is in the range of 500 ° to 1000 °, the life can be extended to about 2 to 7 times as compared with the uncoated one.

Furthermore, the ion beam vapor deposition has a life ten times or more longer than that of the uncoated one, but has a very low processing capacity of 13 wires / hour. It does not extend to the invention in terms of processing capacity. When the amorphous silicon intermediate layer is formed by ion plating, the processing capability can be increased.

The present invention shows an example in which a high-frequency electrode independent of the holder is applied. The holder may be grounded, but applying a negative DC voltage improves the film forming speed. For example, when a power of 400 W is applied to the high-frequency electrode, the film forming speed is 600 ° / h when the holder is grounded, but the film forming speed is increased to 2000 ° / h when a DC voltage of −500 V is applied to the holder. .

In this apparatus, a holder as shown in FIG. 2 was used to make the thickness of the cylindrical metal base material uniform in the circumferential direction. By making the inner diameter of the hole for holding the columnar metal base material larger than the outer diameter of the columnar metal base material, the columnar metal base material rotates with the revolving motion of the holder. Further, by stacking the holders in multiple stages, the number of processing units can be increased. By using such a continuous coating apparatus, the processing capacity was more than doubled, the labor cost was reduced by half, and the capital investment was reduced by less than half, and a significant improvement in productivity was achieved.

The roller (cylindrical metal part) of the present invention comprises:
Although the number of steps is increased as compared with those made of uncoated SUJ or SUS420J2, the service life is significantly increased. In the present invention, it is necessary to coat a two-layered thin film, but the processing ability is higher than the formation of a single hard carbon layer by the ion beam evaporation method, and the productivity is superior.

[0048]

According to the present invention, the surface of the columnar metal base material is coated with an amorphous silicon intermediate layer and a hard carbon layer.
The hard carbon layer provides high wear resistance and reduces wear. In addition, the adhesion between the metal base material and the hard carbon layer can be obtained by the amorphous silicon intermediate layer, so that the base material can be coated with the hard carbon layer without using an ion beam evaporation method that takes a long time to form a film. Since the processing time for forming the film can be shortened, the productivity is improved as compared with the method using the ion beam evaporation method.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an apparatus for continuously forming an amorphous silicon intermediate layer and a hard carbon film.

FIG. 2 is a diagram showing a relationship between a hole of one plate of a self-revolution type holder and a columnar metal base material.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum tank 2 Holder 3 Columnar metal base material 4 Silicon evaporation source 5 Shutter 6 High frequency electrode 7 Motor for substrate rotation 8 Rotating shaft 9 High frequency power supply 10 Gas inlet 11 Gas exhaust port

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hiroshi Kawai 1-1-1, Koyokita, Itami-shi, Itami-shi, Hyogo Sumitomo Electric Industries, Ltd. Itami Works (56) References JP-A-3-240957 (JP, A) JP-A-3-76639 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) C23C 28/04

Claims (6)

(57) [Claims] 1. A cylindrical metal component, wherein at least a part of an outer peripheral surface of a cylindrical metal base material is coated with an amorphous silicon intermediate layer, and a hard carbon layer is coated thereon. 2. Assuming that the thicknesses of the amorphous silicon intermediate layer and the hard carbon layer are d ₁ and d ₂ respectively, 50 ° ≦ d _1
2. The cylindrical metal part according to claim 1, wherein ≦ 5000 ° and 1000 ° ≦ d ₂ ≦ 1 μm. 3. 3. The cylindrical metal part according to claim 1, wherein the cylindrical metal base material is a steel material containing iron as a main component. 4. In a vacuum apparatus, on a cylindrical metal base material,
A circle characterized in that the amorphous silicon intermediate layer is coated by the PVD method, and the hard carbon layer is coated on the amorphous silicon intermediate layer by the plasma CVD method in the same apparatus while continuously maintaining the vacuum in the apparatus. Manufacturing method of columnar metal parts. 5. The circle according to claim 4, wherein the amorphous silicon intermediate layer and the hard carbon layer are formed while a negative DC voltage is applied to the columnar metal base material. Manufacturing method of columnar metal parts. 6. A vacuum chamber that can be evacuated, a silicon evaporation source provided in the vacuum chamber, and a silicon evaporation source in the vacuum chamber for exciting a gas such as argon and hydrocarbon and silicon vapor at a high frequency. A high-frequency coil provided above, a gas inlet for introducing a source gas containing argon and hydrocarbons into the vacuum chamber, and a holder for holding a plurality of columnar metal base materials in the vacuum chamber; An apparatus for manufacturing a columnar metal part, comprising: a rotating mechanism for rotating a holder; and a mechanism for applying a negative DC voltage to the holder.