JP2970027B2 - Semiconductor device for microwave - Google Patents
Semiconductor device for microwaveInfo
- Publication number
- JP2970027B2 JP2970027B2 JP8344391A JP8344391A JP2970027B2 JP 2970027 B2 JP2970027 B2 JP 2970027B2 JP 8344391 A JP8344391 A JP 8344391A JP 8344391 A JP8344391 A JP 8344391A JP 2970027 B2 JP2970027 B2 JP 2970027B2
- Authority
- JP
- Japan
- Prior art keywords
- package
- cap
- semiconductor device
- frequency
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置用に関し、特
にハーメチックパッケージ構造の高出力マイクロ波用半
導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a high power microwave semiconductor device having a hermetic package structure.
【０００２】[0002]
【従来の技術】従来のハーメチックパッケージ構造の高
出力半導体装置の一例を図３に示す。同図（ａ）は縦断
面図、同図（ｂ）はそのＣ−Ｃ線断面図である。同図に
示すように、無酸素銅等の熱伝導性の良い金属からなる
放熱板１の周辺部にセラミック又は金属から成る周壁２
を設け、この上にセラミック又は金属から成る平板型キ
ャップ７を取着して内部を封止することでパッケージが
構成される。又、このパッケージ内部には半導体素子４
を内装し、更に高出力素子の場合、その入出力インピー
ダンスが低いため（≦50Ω）、そのＲＦ性能を十分に外
部回路に引き出す目的で、アルミナセラミック又は高誘
電体材料で作成されたインピーダンス整合用の回路部品
５を放熱板上に搭載し、これらを金属線６で入出力リー
ド端子３と接続している。2. Description of the Related Art FIG. 3 shows an example of a conventional high power semiconductor device having a hermetic package structure. FIG. 1A is a longitudinal sectional view, and FIG. 1B is a sectional view taken along line CC. As shown in FIG. 1, a peripheral wall 2 made of ceramic or metal is provided around a heat radiating plate 1 made of a metal having good thermal conductivity such as oxygen-free copper.
And a flat cap 7 made of ceramic or metal is mounted thereon and the inside is sealed to form a package. Also, a semiconductor element 4 is provided inside this package.
In the case of a high-power element, since its input / output impedance is low (≦ 50Ω), it is used for impedance matching made of alumina ceramic or high dielectric material in order to fully extract its RF performance to external circuits. Are mounted on a heat sink, and these are connected to the input / output lead terminals 3 by metal wires 6.
【０００３】[0003]
【発明が解決しようとする課題】この従来の高出力半導
体装置用パッケージにおいては、高出力になるほど半導
体素子を多数個並列に動作させる必要があり、これに伴
って回路部品も多くなるため、パッケージの大きさが大
きくなる。又、使用周波数が高周波になるほど波長が短
くなるため、相対的に波長に対するパッケージの大きさ
が大きくなる。通常、図３に示したようなパッケージに
おいては、パッケージの内部空間における空洞共振の周
波数ｆR は、内部空間の縦横高さ寸法ａ，ｂ，ｃに相関
し、次のように求められる。 ｆR ∝〔（m/a)2 ＋(n/b)2＋(p/c)2〕1/2 但し、ｍ，ｎ，ｐは整数In this conventional high-output semiconductor device package, it is necessary to operate a large number of semiconductor elements in parallel as the output becomes higher, and the number of circuit components increases accordingly. Becomes large. Also, since the wavelength becomes shorter as the operating frequency becomes higher, the size of the package relative to the wavelength becomes relatively large. Normally, in the package as shown in FIG. 3, the frequency f R of the cavity resonance in the internal space of the package correlates with the vertical and horizontal heights a, b, and c of the internal space, and is obtained as follows. f R ∝ [(m / a) 2 + (n / b) 2 + (p / c) 2 ] 1/2 where m, n, and p are integers
【０００４】したがって、パッケージが大きくなればな
るほど共振周波数は下がり使用周波数に近づく。換言す
れば、同じ大きさのパッケージを高周波で使用すると共
振周波数は近くなる。このように共振周波数が使用周波
数に近づくと入出力間の信号のアイソレーションがとれ
なくなり、帰還がかかりやすく発振等の不安定性が多く
なり、半導体素子が本来有する特性を外部に引き出せな
くなり、半導体装置の高出力化、高周波化を実現するこ
とが困難になるという問題がある。本発明の目的はパッ
ケージの共振周波数を高くして高出力化、高周波化を可
能にしたマイクロ波用半導体装置を提供することにあ
る。[0004] Therefore, as the size of the package increases, the resonance frequency decreases and approaches the working frequency. In other words, when the same size package is used at a high frequency, the resonance frequency becomes close. As described above, when the resonance frequency approaches the operating frequency, signal isolation between the input and output cannot be obtained, feedback is likely to occur, and instability such as oscillation increases, and characteristics inherent in the semiconductor element cannot be extracted to the outside. However, there is a problem that it is difficult to achieve high output and high frequency. SUMMARY OF THE INVENTION An object of the present invention is to provide a microwave semiconductor device capable of increasing the resonance frequency of a package to achieve higher output and higher frequency.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体装置は、
パッケージ内に搭載する半導体素子と回路部品の一方又
は両方によって生じる凹凸に合わせた凹凸部を内面に有
するキャップを有し、前記キャップを前記パッケージに
取着したときに、前記キャップ内面の凹凸部によって前
記半導体素子と回路部品の一方又は両方とキャップ内面
との間の空間容積を小さくする構成とする。又、キャッ
プは金属で構成されることが好ましい。According to the present invention, there is provided a semiconductor device comprising:
A cap having an uneven portion on the inner surface that matches the unevenness generated by one or both of the semiconductor element and the circuit component mounted in the package, and when the cap is attached to the package, the cap has an uneven portion on the inner surface. The space volume between one or both of the semiconductor element and the circuit component and the inner surface of the cap is reduced. Preferably, the cap is made of metal.
【０００６】[0006]
【作用】本発明によれば、凹凸部でパッケージの内部空
間を隔成してその共振周波数を高くして、使用周波数を
高めることを可能とし、かつパッケージの大型化を可能
とする。According to the present invention, the internal space of the package is separated by the concave and convex portions, the resonance frequency thereof is increased, the use frequency can be increased, and the size of the package can be increased.
【０００７】[0007]
【実施例】次に、本発明を図面を参照して説明する。図
１は本発明の第１実施例を示し、同図（ａ）は入出力リ
ード方向の縦断面図、同図（ｂ）はＡ−Ａ線に沿う断面
図である。これらの図において、パッケージは従来と同
様な放熱板１を有し、その周辺部に周壁２を設け、かつ
リード端子３を突出させている。前記周壁２で囲まれた
放熱板１上には半導体素子４を搭載し、更にインピーダ
ンス整合等の回路部品５を搭載し、金属線６により相互
に電気接続を行っている。その上で、前記周壁２上にキ
ャップ７をハーメチック構造で取着してパッケージを構
成し、前記半導体素子４や回路部品５を封止している
が、このキャップ７は金属で構成し、さらにその内面に
は前記半導体素子４の凹凸に合わせた凹凸部８を設けて
いる。即ち、この実施例ではＡ−Ａ線に沿ったキャップ
７の内面位置に下方に向けて凸部８ａを設け、この凸部
８ａには半導体素子４の直上位置に半導体素子４との干
渉を避けるための凹部８ｂを設けている。Next, the present invention will be described with reference to the drawings. 1A and 1B show a first embodiment of the present invention. FIG. 1A is a longitudinal sectional view in the input / output lead direction, and FIG. 1B is a sectional view taken along line AA. In these figures, the package has a heat radiating plate 1 similar to the conventional one, a peripheral wall 2 is provided around the heat radiating plate 1, and the lead terminals 3 are projected. A semiconductor element 4 is mounted on the heat sink 1 surrounded by the peripheral wall 2, and a circuit component 5 such as impedance matching is mounted thereon. Then, a package is formed by attaching a cap 7 on the peripheral wall 2 in a hermetic structure, and the semiconductor element 4 and the circuit component 5 are sealed. The cap 7 is formed of metal, On its inner surface, an uneven portion 8 corresponding to the unevenness of the semiconductor element 4 is provided. That is, in this embodiment, a convex portion 8a is provided downward at the inner surface position of the cap 7 along the line AA, and interference with the semiconductor device 4 is avoided at a position directly above the semiconductor device 4 in the convex portion 8a. Recess 8b is provided.
【０００８】したがって、この構成によれば、パッケー
ジの内部空間は凹凸部８によって左右２つに隔成される
ため、特にａ′寸法が小さくなり、前記した式によれ
ば、共振周波数を高めることが可能となる。この例で
は、図３の従来構造に比較して寸法ａ′がａの約 1/2に
なり、共振周波数は約２倍になる。このため、外形寸法
が同一のパッケージにおいては、より高周波まで使用可
能となり、換言すれば同一周波数の使用においては、よ
り大型の形状のパッケージの使用が可能となり、マイク
ロ波領域での高出力化、高周波化が実現できる。Therefore, according to this structure, since the inner space of the package is separated into two parts on the right and left sides by the concave and convex portions 8, the dimension a 'is particularly reduced, and according to the above equation, the resonance frequency is increased. Becomes possible. In this example, the dimension a 'is about 1/2 of "a" and the resonance frequency is about twice as compared with the conventional structure of FIG. For this reason, in a package having the same external dimensions, higher frequencies can be used.In other words, in the use of the same frequency, a package having a larger shape can be used. Higher frequency can be realized.
【０００９】図２は本発明の第２実施例を示しており、
同図（ａ）は縦断面図、同図（ｂ）はそのＢ−Ｂ線断面
図である。尚、第１実施例と同一部分には同一符号を付
してある。この実施例では、キャップ７の内面に形成す
る凹凸部８Ａを、半導体素子４及び回路部品５の凹凸に
合わせた形状に形成している。この実施例によれば、パ
ッケージの内部空間を更に小さく隔成して共振周波数を
一層高めることができ、第１実施例よりも高出力化、高
周波化の効果を高めることが可能となる。FIG. 2 shows a second embodiment of the present invention.
FIG. 1A is a longitudinal sectional view, and FIG. 1B is a sectional view taken along line BB. The same parts as those in the first embodiment are denoted by the same reference numerals. In this embodiment, the uneven portion 8A formed on the inner surface of the cap 7 is formed in a shape corresponding to the unevenness of the semiconductor element 4 and the circuit component 5. According to this embodiment, the internal space of the package can be further reduced and the resonance frequency can be further increased, and the effects of higher output and higher frequency than in the first embodiment can be enhanced.
【００１０】[0010]
【発明の効果】以上説明したように本発明は、パッケー
ジ内に搭載される半導体素子と回路部品の一方又は両方
によって生じる凹凸に合わせた凹凸部を内面に有するキ
ャップを有し、前記キャップを前記パッケージに取着し
たときに、前記キャップ内面の凹凸部によって前記半導
体素子と回路部品の一方又は両方とキャップ内面との間
の空間容積を小さくする構成としているので、共振周波
数を上げることが可能となる。これにより、同一形状の
パッケージにおいては、より高周波まで使用可能とな
り、同一周波数の使用においては、より大型の形状のパ
ッケージの使用が可能となり、マイクロ波領域でより高
出力化、高周波化が実現できる効果がある。As described above, the present invention includes a cap having on its inner surface an uneven portion corresponding to unevenness generated by one or both of a semiconductor element and a circuit component mounted in a package. When mounted on a package, the concave and convex portions on the inner surface of the cap reduce the volume of space between one or both of the semiconductor element and the circuit component and the inner surface of the cap, so that the resonance frequency can be increased. Become. As a result, in a package having the same shape, a higher frequency can be used, and in a case of using the same frequency, a package having a larger shape can be used, and higher output and higher frequency can be realized in a microwave region. effective.
【図１】本発明の第１実施例を示し、（ａ）は縦断面
図、（ｂ）はそのＡ−Ａ線断面図である。FIGS. 1A and 1B show a first embodiment of the present invention, in which FIG. 1A is a longitudinal sectional view, and FIG. 1B is a sectional view taken along line AA.
【図２】本発明の第１実施例を示し、（ａ）は縦断面
図、（ｂ）はそのＢ−Ｂ線断面図である。2A and 2B show a first embodiment of the present invention, wherein FIG. 2A is a longitudinal sectional view, and FIG. 2B is a sectional view taken along the line BB.
【図３】従来の半導体装置を示し、（ａ）は縦断面図、
（ｂ）はそのＣ−Ｃ線断面図である。3A and 3B show a conventional semiconductor device, in which FIG.
(B) is the CC sectional view taken on the line.
１ 放熱板 ２ 周壁 ４ 半導体素子 ５ 回路部品 ７ キャップ ８，８Ａ 凹凸部 DESCRIPTION OF SYMBOLS 1 Heat sink 2 Perimeter wall 4 Semiconductor element 5 Circuit component 7 Cap 8, 8A Uneven part
Claims (2)
置において、パッケージ内に搭載する半導体素子と回路
部品の一方又は両方によって生じる凹凸に合わせた凹凸
部を内面に有するキャップを有し、前記キャップを前記
パッケージに取着したときに、前記キャップ内面の凹凸
部によって前記半導体素子と回路部品の一方又は両方と
キャップ内面との間の空間容積を小さくすることを特徴
とするマイクロ波用半導体装置。1. A semiconductor device having a hermetic package structure, comprising: a cap having on its inner surface an uneven portion corresponding to unevenness generated by one or both of a semiconductor element and a circuit component mounted in the package, and attaching the cap to the package. A semiconductor device for microwaves, wherein when mounted, the volume of the space between one or both of the semiconductor element and the circuit component and the inner surface of the cap is reduced by the uneven portion on the inner surface of the cap.
１に記載のマイクロ波用半導体装置。2. The microwave semiconductor device according to claim 1, wherein the cap is made of a metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8344391A JP2970027B2 (en) | 1991-03-23 | 1991-03-23 | Semiconductor device for microwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8344391A JP2970027B2 (en) | 1991-03-23 | 1991-03-23 | Semiconductor device for microwave |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04294568A JPH04294568A (en) | 1992-10-19 |
| JP2970027B2 true JP2970027B2 (en) | 1999-11-02 |
Family
ID=13802578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8344391A Expired - Fee Related JP2970027B2 (en) | 1991-03-23 | 1991-03-23 | Semiconductor device for microwave |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2970027B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101080359A (en) * | 2004-11-04 | 2007-11-28 | 微芯片公司 | Compression and cold weld sealing methods and devices |
| JP2012009675A (en) * | 2010-06-25 | 2012-01-12 | Mitsubishi Electric Corp | High frequency semiconductor package |
-
1991
- 1991-03-23 JP JP8344391A patent/JP2970027B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04294568A (en) | 1992-10-19 |
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