JP2012009675A - High frequency semiconductor package - Google Patents

High frequency semiconductor package Download PDF

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Publication number
JP2012009675A
JP2012009675A JP2010145089A JP2010145089A JP2012009675A JP 2012009675 A JP2012009675 A JP 2012009675A JP 2010145089 A JP2010145089 A JP 2010145089A JP 2010145089 A JP2010145089 A JP 2010145089A JP 2012009675 A JP2012009675 A JP 2012009675A
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Prior art keywords
cavity
power amplifier
input
package
side feedthrough
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JP2010145089A
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Japanese (ja)
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Takaaki Yoshioka
貴章 吉岡
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2010145089A priority Critical patent/JP2012009675A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency semiconductor package in which arrangement of mounting components is not limited, and reduction of gain can be prevented.SOLUTION: In a cavity 12 of a package body 10, an input side feed through 14, a semiconductor power amplifier 18 for microwave band or millimeter wave band, and an output side feed through 22 are provided. The output side feed through 22 faces the input side feed through 14 in the cavity 12. The cavity 12 is sealed hermetically by a lid 24. The semiconductor power amplifier 18 has an input terminal connected with the input side feed through 14, and an output terminal connected with the output side feed through 22. The lid 24 has a protrusion 28 consisting of a ground conductor. The protrusion 28 is arranged between the input side feed through 14 and the output side feed through 22.

Description

本発明は、マイクロ波帯又はミリ波帯用の半導体電力増幅器を備える高周波半導体パッケージに関する。   The present invention relates to a high frequency semiconductor package including a semiconductor power amplifier for a microwave band or a millimeter wave band.

半導体電力増幅器の使用周波数帯域の高帯域化に伴い、パッケージの共振周波数と増幅器の使用周波数との重複に起因した入出力アイソレーション劣化による利得低減が問題となる。従来は、この利得低減を回避するため、パッケージのサイズを変更してパッケージの共振周波数を変化させていた。しかし、対象周波数毎にそれに適したサイズのパッケージを準備する必要があった。   As the operating frequency band of the semiconductor power amplifier increases, gain reduction due to input / output isolation deterioration due to overlap between the resonant frequency of the package and the operating frequency of the amplifier becomes a problem. Conventionally, in order to avoid this gain reduction, the package resonance frequency is changed by changing the package size. However, it is necessary to prepare a package of a size suitable for each target frequency.

また、パッケージのサイズを変更しない場合、入力側フィードスルーと出力側フィードスルーがキャビティ内で対向しているため、入力信号の一部が出力側フィードスルーに漏洩する。これにより、パッケージの入出力アイソレーションが悪化し、増幅器としての性能が落ちてしまう。   Further, when the package size is not changed, a part of the input signal leaks to the output side feedthrough because the input side feedthrough and the output side feedthrough face each other in the cavity. As a result, the input / output isolation of the package deteriorates and the performance as an amplifier is degraded.

そこで、キャビティ内に仕切り板や支柱を設けること（例えば、特許文献１参照）や、蓋を貫通するネジ穴にネジを取り付けること（例えば、特許文献２参照）により、パッケージの共振周波数を制御することが提案されている。   Therefore, the resonance frequency of the package is controlled by providing a partition plate or support in the cavity (for example, see Patent Document 1) or attaching a screw to a screw hole that penetrates the lid (for example, see Patent Document 2). It has been proposed.

特開平９−１８６２５９号公報JP-A-9-186259 特開平１１−１５４８２３号公報Japanese Patent Laid-Open No. 11-154823

しかし、キャビティ内に仕切り板や支柱を設けると、キャビティ内の実装部品の配置に制約が生じる。また、蓋を貫通するネジ穴にネジを取り付けると、ネジ穴とネジの間に隙間が生じるため、キャビティ内を気密状態に保つことができなかった。   However, when a partition plate or a support is provided in the cavity, there is a restriction on the arrangement of the mounted components in the cavity. Further, when a screw is attached to the screw hole penetrating the lid, a gap is generated between the screw hole and the screw, so that the inside of the cavity cannot be kept airtight.

本発明は、上述のような課題を解決するためになされたもので、第１の目的は、実装部品の配置に制約を生じさせず、利得低減を防止することができる高周波半導体パッケージを得るものである。第２の目的は、キャビティ内を気密状態に保ちつつ、利得低減を防止することができる高周波半導体パッケージを得るものである。   The present invention has been made to solve the above-described problems, and a first object thereof is to obtain a high-frequency semiconductor package capable of preventing gain reduction without causing restrictions on the arrangement of mounted components. It is. The second object is to obtain a high-frequency semiconductor package capable of preventing gain reduction while keeping the inside of the cavity airtight.

第１の発明に係る高周波半導体パッケージは、キャビティを有するパッケージと、前記パッケージの前記キャビティ内に配置されたマイクロ波帯又はミリ波帯用の半導体電力増幅器と、前記半導体電力増幅器の入力端子に接続された入力側フィードスルーと、前記キャビティ内で前記入力側フィードスルーに対向し、前記半導体電力増幅器の出力端子に接続された出力側フィードスルーと、前記キャビティを密封する蓋とを備え、前記蓋は、前記入力側フィードスルーと前記出力側フィードスルーの間に配置された接地導体からなる突起を有する。   A high-frequency semiconductor package according to a first invention is connected to a package having a cavity, a semiconductor power amplifier for a microwave band or a millimeter wave band disposed in the cavity of the package, and an input terminal of the semiconductor power amplifier An input-side feedthrough, an output-side feedthrough facing the input-side feedthrough in the cavity and connected to an output terminal of the semiconductor power amplifier, and a lid for sealing the cavity. Has a protrusion made of a ground conductor disposed between the input side feedthrough and the output side feedthrough.

第２の発明に係る高周波半導体パッケージは、キャビティを有するパッケージと、前記パッケージの前記キャビティ内に配置されたマイクロ波帯又はミリ波帯用の半導体電力増幅器と、前記半導体電力増幅器の入力端子に接続された入力側フィードスルーと、前記キャビティ内で前記入力側フィードスルーに対向し、前記半導体電力増幅器の出力端子に接続された出力側フィードスルーと、前記キャビティの底面に設けられ、前記パッケージを貫通しないネジ穴と、前記入力側フィードスルーと前記出力側フィードスルーの間に配置され、前記ネジ穴に取り付けられた導電性のネジと、前記キャビティを密封する蓋とを備える。   A high-frequency semiconductor package according to a second invention is connected to a package having a cavity, a semiconductor power amplifier for a microwave band or a millimeter wave band disposed in the cavity of the package, and an input terminal of the semiconductor power amplifier An input-side feedthrough, an output-side feedthrough facing the input-side feedthrough in the cavity and connected to an output terminal of the semiconductor power amplifier, and a bottom surface of the cavity, penetrating the package A screw hole, a conductive screw disposed between the input side feedthrough and the output side feedthrough and attached to the screw hole, and a lid for sealing the cavity.

第１の発明により、実装部品の配置に制約を生じさせず、利得低減を防止することができる。第２の発明により、キャビティ内を気密状態に保ちつつ、利得低減を防止することができる。   According to the first invention, it is possible to prevent the gain from being reduced without restricting the arrangement of the mounted components. According to the second aspect of the invention, gain reduction can be prevented while keeping the inside of the cavity airtight.

実施の形態１に係る高周波半導体パッケージの内部を示す上面図である。3 is a top view showing the inside of the high-frequency semiconductor package according to Embodiment 1. FIG. 図１のＡ−Ａ´に沿った断面図である。It is sectional drawing along AA 'of FIG. 実施の形態１に係るパッケージと蓋を示す斜視図である。It is a perspective view which shows the package and cover which concern on Embodiment 1. FIG. 実施の形態２に係る高周波半導体パッケージの内部を示す上面図である。6 is a top view showing the inside of a high-frequency semiconductor package according to Embodiment 2. FIG. 図１のＡ−Ａ´に沿った断面図である。It is sectional drawing along AA 'of FIG. 図１のＢ−Ｂ´に沿った断面図である。It is sectional drawing along BB 'of FIG. 実施の形態２に係るパッケージと蓋を示す斜視図である。It is a perspective view which shows the package and cover which concern on Embodiment 2. FIG.

本発明の実施の形態に係る高周波半導体パッケージについて図面を参照して説明する。同じ構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。   A high-frequency semiconductor package according to an embodiment of the present invention will be described with reference to the drawings. The same components are denoted by the same reference numerals, and repeated description may be omitted.

実施の形態１．
図１は、実施の形態１に係る高周波半導体パッケージの内部を示す上面図である。図２は図１のＡ−Ａ´に沿った断面図である。図３は、実施の形態１に係るパッケージと蓋を示す斜視図である。 Embodiment 1 FIG.
FIG. 1 is a top view showing the inside of the high-frequency semiconductor package according to the first embodiment. FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. FIG. 3 is a perspective view showing a package and a lid according to the first embodiment.

パッケージ本体１０はキャビティ１２を有する。このパッケージ本体１０のキャビティ１２内に、入力側フィードスルー１４、回路基板１６、マイクロ波帯又はミリ波帯用の半導体電力増幅器１８、回路基板２０、及び出力側フィードスルー２２などの実装部品が設けられている。出力側フィードスルー２２は、キャビティ１２内で入力側フィードスルー１４に対向している。キャビティ１２は導電性の蓋２４により密封されている。   The package body 10 has a cavity 12. Mounting components such as an input-side feedthrough 14, a circuit board 16, a semiconductor power amplifier 18 for a microwave band or a millimeter-wave band, a circuit board 20, and an output-side feedthrough 22 are provided in the cavity 12 of the package body 10. It has been. The output-side feedthrough 22 faces the input-side feedthrough 14 in the cavity 12. The cavity 12 is sealed with a conductive lid 24.

半導体電力増幅器１８の入力端子は、ワイヤ２６及び回路基板１６を介して入力側フィードスルー１４に接続されている。半導体電力増幅器１８の出力端子は、ワイヤ２６及び回路基板２０を介して出力側フィードスルー２２に接続されている。入力側フィードスルー１４と出力側フィードスルー２２はパッケージ本体１０の側壁を貫通し、パッケージ本体１０内外で信号を伝達する。   The input terminal of the semiconductor power amplifier 18 is connected to the input side feedthrough 14 via the wire 26 and the circuit board 16. The output terminal of the semiconductor power amplifier 18 is connected to the output side feedthrough 22 via the wire 26 and the circuit board 20. The input side feedthrough 14 and the output side feedthrough 22 penetrate the side wall of the package body 10 and transmit signals inside and outside the package body 10.

本実施の形態では、蓋２４は、接地導体からなる波型の突起２８を有する。この突起２８は、入力側フィードスルー１４と出力側フィードスルー２２の間に配置されている。この導電性の突起２８によりキャビティ１２の長さは短くなる。従って、パッケージ本体１０の共振周波数は高くなり、半導体電力増幅器１８の使用周波数帯との重複を防ぐことができる。この結果、パッケージ本体１０の形状、サイズ、及び材質を変えることなく、入出力間のアイソレーションを改善することができる。よって、所望の周波数での利得低減を防止することができる。また、蓋２４に突起２８を設けても、キャビティ１２内の実装部品の配置に制約は生じない。   In the present embodiment, the lid 24 has a corrugated protrusion 28 made of a ground conductor. The protrusion 28 is disposed between the input side feedthrough 14 and the output side feedthrough 22. The length of the cavity 12 is shortened by the conductive protrusion 28. Therefore, the resonance frequency of the package body 10 is increased, and overlapping with the use frequency band of the semiconductor power amplifier 18 can be prevented. As a result, the isolation between input and output can be improved without changing the shape, size, and material of the package body 10. Thus, gain reduction at a desired frequency can be prevented. Further, even if the protrusions 28 are provided on the lid 24, there is no restriction on the arrangement of the mounted components in the cavity 12.

実施の形態２．
図４は、実施の形態２に係る高周波半導体パッケージの内部を示す上面図である。図５は図１のＡ−Ａ´に沿った断面図であり、図６は図１のＢ−Ｂ´に沿った断面図である。図７は、実施の形態２に係るパッケージと蓋を示す斜視図である。 Embodiment 2. FIG.
FIG. 4 is a top view showing the inside of the high-frequency semiconductor package according to the second embodiment. 5 is a cross-sectional view taken along the line AA ′ of FIG. 1, and FIG. 6 is a cross-sectional view taken along the line BB ′ of FIG. FIG. 7 is a perspective view showing a package and a lid according to the second embodiment.

実施の形態１とは異なり、蓋２４に突起２８は設けられていない。その代わりに、キャビティ１２の底面に、パッケージ本体１０を貫通しないネジ穴３０が設けられている。ネジ穴３０の個数は例えば１０個以下である。そして、ネジ穴３０に導電性のネジ３２が取り付けられている。このネジ３２は、入力側フィードスルー１４と出力側フィードスルー２２の間に配置されている。この導電性のネジ３２により、実施の形態１と同様に所望の周波数での利得低減を防止することができる。また、ネジ３２はパッケージ本体１０を貫通していないため、キャビティ１２内を気密状態に保つことができる。   Unlike the first embodiment, the protrusion 24 is not provided on the lid 24. Instead, a screw hole 30 that does not penetrate the package body 10 is provided on the bottom surface of the cavity 12. The number of screw holes 30 is, for example, 10 or less. A conductive screw 32 is attached to the screw hole 30. The screw 32 is disposed between the input side feedthrough 14 and the output side feedthrough 22. This conductive screw 32 can prevent gain reduction at a desired frequency, as in the first embodiment. Further, since the screw 32 does not penetrate the package body 10, the inside of the cavity 12 can be kept airtight.

１０ パッケージ本体
１２ キャビティ
１４ 入力側フィードスルー
１８ 半導体電力増幅器
２２ 出力側フィードスルー
２４ 蓋
２８ 突起
３０ ネジ穴
３２ ネジ DESCRIPTION OF SYMBOLS 10 Package main body 12 Cavity 14 Input side feedthrough 18 Semiconductor power amplifier 22 Output side feedthrough 24 Cover 28 Protrusion 30 Screw hole 32 Screw

Claims (2)

キャビティを有するパッケージ本体と、
前記パッケージ本体の前記キャビティ内に配置されたマイクロ波帯又はミリ波帯用の半導体電力増幅器と、
前記半導体電力増幅器の入力端子に接続された入力側フィードスルーと、
前記キャビティ内で前記入力側フィードスルーに対向し、前記半導体電力増幅器の出力端子に接続された出力側フィードスルーと、
前記キャビティを密封する蓋とを備え、
前記蓋は、前記入力側フィードスルーと前記出力側フィードスルーの間に配置された接地導体からなる突起を有することを特徴とする高周波半導体パッケージ。 A package body having a cavity;
A semiconductor power amplifier for a microwave band or a millimeter wave band disposed in the cavity of the package body;
An input side feedthrough connected to an input terminal of the semiconductor power amplifier;
An output side feedthrough connected to the output terminal of the semiconductor power amplifier, facing the input side feedthrough in the cavity;
A lid for sealing the cavity;
The high-frequency semiconductor package according to claim 1, wherein the lid has a protrusion made of a ground conductor disposed between the input-side feedthrough and the output-side feedthrough. キャビティを有するパッケージ本体と、
前記パッケージ本体の前記キャビティ内に配置されたマイクロ波帯又はミリ波帯用の半導体電力増幅器と、
前記半導体電力増幅器の入力端子に接続された入力側フィードスルーと、
前記キャビティ内で前記入力側フィードスルーに対向し、前記半導体電力増幅器の出力端子に接続された出力側フィードスルーと、
前記キャビティの底面に設けられ、前記パッケージ本体を貫通しないネジ穴と、
前記入力側フィードスルーと前記出力側フィードスルーの間に配置され、前記ネジ穴に取り付けられた導電性のネジと、
前記キャビティを密封する蓋とを備えることを特徴とする高周波半導体パッケージ。 A package body having a cavity;
A semiconductor power amplifier for a microwave band or a millimeter wave band disposed in the cavity of the package body;
An input side feedthrough connected to an input terminal of the semiconductor power amplifier;
An output side feedthrough connected to the output terminal of the semiconductor power amplifier, facing the input side feedthrough in the cavity;
A screw hole provided on the bottom surface of the cavity and not penetrating the package body;
A conductive screw disposed between the input side feedthrough and the output side feedthrough and attached to the screw hole;
A high frequency semiconductor package comprising a lid for sealing the cavity.
JP2010145089A 2010-06-25 2010-06-25 High frequency semiconductor package Pending JP2012009675A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107141U (en) * 1988-01-07 1989-07-19
JPH02277301A (en) * 1989-04-18 1990-11-13 Nec Corp Package for semiconductor device
JPH0310401A (en) * 1989-06-07 1991-01-18 Fujitsu Ltd Structure for preventing resonance of case
JPH04294568A (en) * 1991-03-23 1992-10-19 Nec Corp Semiconductor device for microwave use

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107141U (en) * 1988-01-07 1989-07-19
JPH02277301A (en) * 1989-04-18 1990-11-13 Nec Corp Package for semiconductor device
JPH0310401A (en) * 1989-06-07 1991-01-18 Fujitsu Ltd Structure for preventing resonance of case
JPH04294568A (en) * 1991-03-23 1992-10-19 Nec Corp Semiconductor device for microwave use

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