JP2001196500A - Semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package where abnormal oscillation and destruction do not occur even if the semiconductor circuit of a high gain is mounted. SOLUTION: A plurality of through holes where resistance films are formed by leaving the interval of the almost 1/4 transmission wavelength of a signal frequency in a cavity direction or the peripheral direction of a cavity from a plurality of surface/rear continuity through holes disposed for forming the cavity in a laminated dielectric substrate are arranged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for sealing a microwave or millimeter wave integrated circuit operating in a high frequency band.

[0002]

2. Description of the Related Art FIGS. 6, 7 and 8 show a conventional semiconductor package. In the figure, 1 is a metal box,
2 is an input / output terminal, 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, and 5 is a resistor.

FIG. 9 is a diagram showing characteristics of a conventional semiconductor package. In the figure, curves a1 and a2 correspond to FIG.
When the resistor 5 is not provided in the cavity as shown in FIG. 7, the curves b1 and b2 are for the case where the resistor 5 is provided on the side wall of the cavity as shown in FIG. 7, and the curves c1 and c2 are for the cap 3 as shown in FIG.
In the case where the resistor 5 is provided on the back surface, the reflection characteristics and the space propagation characteristics at the input / output terminal 2 are shown.

Next, the operation and characteristics of the conventional semiconductor package will be described. In a conventional semiconductor package, a semiconductor element and a dielectric circuit board 4 are arranged in a cavity formed in a box 1 as shown in FIGS.
To electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Furthermore, an airtight structure is obtained by sealing with a cap 3. In such a semiconductor package, depending on the dimensions in the cavity,
There are a waveguide transmission mode in which the cutoff frequency is determined and a waveguide resonance mode in which the resonance frequency is determined, and a signal having this resonance frequency is stored in the cavity. This signal
When coupled to the semiconductor element and the dielectric circuit board 4, abnormal oscillation and destruction are caused, and adversely affect external circuits and the like.
Therefore, in the conventional package, the resonance was suppressed by providing the resistor 5 in the cavity as shown in FIGS.

Next, the characteristics of the conventional semiconductor package will be supplemented. The reflection characteristics at the input / output terminal 2 of each conventional semiconductor package are as shown by curves a1, b1, and c1 in FIG. 9, and when there is no resistor 5 in the cavity (curve a1 in FIG. 6), resonance occurs. In the case of having a frequency and having the cavity resistor 5 (curves b1 and c1 in FIGS. 7 and 8), resonance can be suppressed. Further, the spatial propagation characteristics of each conventional semiconductor package are as shown by curves a2, b2 and c2 in FIG. 9, and when there is no resistor 5 in the cavity (curve a2 in FIG. 6), abnormal oscillation occurs. Even when the cavity has the resistor 5 (curves b2 and c2 in FIGS. 7 and 8), high spatial isolation cannot be ensured (loss of propagation characteristics cannot be increased), so that the semiconductor element and the dielectric circuit board 4 When the gain is high or the stability is low, abnormal oscillation occurs when coupled to a frequency band with low spatial isolation,
Destruction may occur. As described above, in the conventional semiconductor package, the resonance is suppressed by providing the resistor 5 in the cavity. However, since high spatial isolation cannot be secured, when a high-gain semiconductor circuit or the like is mounted, abnormal oscillation occurs. , Destruction, etc. may occur, which has been a problem.

[0006]

As described above, in the conventional semiconductor package, resonance is suppressed by providing a resistor in the cavity, but high spatial isolation cannot be ensured, so that a high-gain semiconductor When a circuit or the like is mounted, abnormal oscillation, destruction, or the like may occur, which has been a problem.

The present invention has been made to solve such a problem, and provides a semiconductor package capable of suppressing abnormal oscillation and destruction even when a high-gain semiconductor circuit or the like is mounted. is there.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor package comprising a plurality of front and back conductive through holes provided when a cavity is formed in a laminated dielectric substrate, and a signal frequency of about 1/4 in the direction of the cavity. A plurality of through holes each having a resistive film are arranged at intervals of a transmission wavelength.

In the semiconductor package according to the second aspect of the present invention, a plurality of front and back conductive through-holes provided when forming a cavity in the laminated dielectric substrate are used to transmit approximately 1/4 of the signal frequency in the peripheral direction of the cavity. A plurality of through holes in which a resistance film is formed are arranged at intervals of.

In the semiconductor package according to a third aspect of the present invention, a plurality of front and back conductive through holes provided when a cavity is formed in a laminated dielectric substrate are used to substantially reduce the signal frequency in two directions, a cavity direction and a peripheral direction of the cavity. /
A plurality of through holes each having a resistive film are arranged at intervals of four transmission wavelengths.

Further, in the semiconductor package according to the fourth aspect of the present invention, an interval of approximately 1/4 transmission wavelength in the cavity direction from a plurality of front and back conductive through holes provided when a cavity is formed in the laminated dielectric substrate. With
A plurality of through holes having different lengths on which a resistance film is formed are arranged.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a configuration diagram of a semiconductor package according to a first embodiment of the present invention. In the drawing, reference numeral 2 denotes an input / output terminal, 3 denotes a cap, 4 denotes a semiconductor element and a dielectric circuit board, 7 denotes a base, and 8a to 8a. 8
"e" denotes a dielectric substrate which forms a cavity by lamination, "9" denotes a front and back conductive through hole, "10" denotes a seal ring, and "11" denotes a through hole in which a resistive film is formed.

FIG. 2 is a diagram showing characteristics of the semiconductor package of the present invention. In the figure, curves a1, a2,
b1, b2, c1, c2 are the same as in FIG.
1 and d2 are input / output terminals 2 of the semiconductor package of the present invention.
Are the reflection characteristic and the space propagation characteristic in the cavity.

Next, the operation and characteristics will be described. As shown in FIG. 1, dielectric substrates 8 a to 8 e are stacked on a base 7, and a cavity is formed by front and back conductive through holes 9. Further, the output terminals 2 are provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, the airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through-hole 11 on which the resistive film is formed is arranged in the cavity direction from the front / back conduction through-hole 9 with an interval t of approximately 1/4 transmission wavelength of the signal frequency F0, and suppresses resonance in the cavity.

Next, the characteristics of the semiconductor package of the present invention will be supplemented. In FIG. 2, curves a1, a2, b
1, b2, c1, and c2 are as described in the related art (FIG. 9). A curve d1 is a reflection characteristic at the input / output terminal 2 of the semiconductor package of the present invention.
2 is a space propagation characteristic in the cavity. As shown
According to this semiconductor package, resonance due to the dimensions in the cavity can be suppressed, and the spatial propagation characteristics can also be reduced.
Since high spatial isolation can be ensured, abnormal oscillation and destruction can be suppressed even when a high-gain semiconductor circuit or the like is mounted.

Further, the space propagation characteristics can be adjusted by the arrangement interval of the plurality of through holes 11 on which the resistive films are formed.

The same effect as described above can be obtained even in a semiconductor package without the base 7 and the seal ring 10.

Embodiment 2 FIG. FIG. 3 is a configuration diagram of a semiconductor package according to a second embodiment of the present invention. In the figure, 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, and 8a to 8e are laminated cavities. , 9 is a front and back conduction through hole, 10 is a seal ring, and 11 is a through hole on which a resistive film is formed.

Next, the operation and characteristics will be described. As shown in FIG. 3, dielectric substrates 8 a to 8 e are stacked on a base 7, and a cavity is formed by front and back conductive through holes 9. Further, an output terminal (omitted in the drawing) is provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, the airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through-holes 11 formed with the resistive film are arranged from the front and back conductive through-holes 9 in the circumferential direction of the cavity with an interval t of about 1/4 transmission wavelength of the signal frequency F0, as shown by the curves d1 and d2 in FIG. Thus, resonance in the cavity can be suppressed, and high spatial isolation can be ensured for the space propagation characteristics. Therefore, according to this semiconductor package, even when a high gain semiconductor circuit or the like is mounted inside the cavity, abnormal oscillation,
Destruction can be suppressed.

Embodiment 3 FIG. 4 is a configuration diagram of a semiconductor package according to a third embodiment of the present invention, in which 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, and 8a to 8e are laminated cavities. , 9 is a front and back conduction through hole, 10 is a seal ring, and 11 is a through hole on which a resistive film is formed.

Next, the operation and characteristics will be described. As shown in FIG. 4, dielectric substrates 8 a to 8 e are stacked on a base 7, and a cavity is formed by front and back conductive through holes 9. Further, an output terminal (omitted in the drawing) is provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, the airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through hole 11 on which the resistive film is formed is separated from the front and back conductive through hole 9 by two in the direction of the cavity and in the direction around the cavity.
In the direction, the interval t of the transmission wavelength approximately 1/4 of the signal frequency F0
As shown by curves d1 and d2 in FIG. 2, resonance in this cavity can be suppressed, and high spatial isolation can be ensured also in the space propagation characteristics. Therefore, according to this semiconductor package, even when a high-gain semiconductor circuit or the like is mounted inside the cavity, abnormal oscillation and destruction can be suppressed. Further, even when a plurality of cavities are adjacent to each other, leakage of signals to the adjacent cavities can be suppressed by the through-holes 11 formed in the peripheral direction of the cavities and formed with a resistive film.

Embodiment 4 FIG. 5 is a configuration diagram of a semiconductor package according to a fourth embodiment of the present invention, wherein 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, and 8a to 8e are stacked to form a cavity. A dielectric substrate, 9 is a front and back conduction through hole, 10 is a seal ring, and 11 is a through hole in which a resistive film is formed.

Next, the operation and characteristics will be described. As shown in FIG. 5, dielectric substrates 8a to 8e are stacked on a base 7 and a cavity is formed by front and back conductive through holes 9. Further, an output terminal (omitted in the drawing) is provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, the airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through hole 11 on which the resistive film is formed is approximately 1/1 of the signal frequency F0 from the front / back conduction through hole 9 toward the cavity.
The curves are arranged at an interval t of four transmission wavelengths and are represented by a curve d1 in FIG.
As shown by the curve d2, resonance in the cavity can be suppressed, and high spatial isolation can be ensured also in the space propagation characteristics. Therefore, according to the semiconductor package, even when a high-gain semiconductor circuit or the like is mounted inside the cavity, abnormal oscillation and destruction can be suppressed.

In the first to third embodiments, a waveguide transmission mode and a waveguide resonance mode are newly generated depending on the size of the space including the dielectric surrounded by the plurality of through holes 11 on which the resistive films are formed. Therefore, resonance may occur. However, according to the semiconductor package of the fourth embodiment, since the lengths of the plurality of through holes 11 on which the resistive films are formed are different, a space surrounded by the plurality of through holes 11 on which the resistive films are formed is not formed. No new waveguide transmission mode and new waveguide resonance mode occur. Therefore, according to this semiconductor package, suppression of resonance in the cavity and securing of high spatial isolation can be more effectively achieved.

[0025]

According to the first aspect of the present invention, a plurality of conductive through-holes provided for forming a cavity in a laminated dielectric substrate are spaced from each other by approximately 1/4 transmission wavelength of a signal frequency in the direction of the cavity. By arranging a plurality of through-holes formed with a resistive film, it is possible to suppress the resonance due to the dimensions in the cavity, and to secure high spatial isolation with respect to the space propagation characteristics, so that a high-gain semiconductor circuit is provided. Even if you implement
Abnormal oscillation, destruction, and the like can be suppressed.

According to the second aspect of the present invention, a plurality of front and back conductive through holes provided for forming a cavity in the laminated dielectric substrate provide a signal having a transmission wavelength of approximately 1/4 of the signal frequency in a direction around the cavity. By arranging a plurality of through-holes with a resistive film at intervals, resonance due to cavity size can be suppressed, and high spatial isolation can be ensured for the space propagation characteristics, resulting in high gain. Even when a semiconductor circuit or the like is mounted, abnormal oscillation and destruction can be suppressed.

According to the third aspect of the invention, the signal frequency is reduced to approximately 1 / in two directions, that is, the direction of the cavity and the direction of the periphery of the cavity, from the plurality of through-holes provided for forming the cavity in the laminated dielectric substrate. By arranging a plurality of through-holes formed with a resistive film at intervals of four transmission wavelengths, resonance due to dimensions in the cavity can be suppressed, and high spatial isolation can be ensured for the spatial propagation characteristics. Even when a high-gain semiconductor circuit or the like is mounted, abnormal oscillation and destruction can be suppressed. Further, even when a plurality of cavities are adjacent to each other, it is possible to suppress signal leakage to the adjacent cavities.

According to the fourth aspect of the present invention, a plurality of front and back conductive through holes provided for forming a cavity in the laminated dielectric substrate are spaced from each other by approximately １ ／ transmission wavelength of the signal frequency in the direction of the cavity. By arranging a plurality of through-holes having different lengths on which the resistive films are formed, it is possible to more effectively suppress the resonance due to the size in the cavity than the first to third inventions, and to improve the space propagation characteristics. Since high spatial isolation can be ensured, abnormal oscillation and destruction can be suppressed even when a high-gain semiconductor circuit or the like is mounted.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of a semiconductor package according to the present invention;

FIG. 2 is a diagram showing characteristics of a semiconductor package according to the present invention.

FIG. 3 is a view showing a semiconductor package according to a second embodiment of the present invention;

FIG. 4 is a view showing a semiconductor package according to a third embodiment of the present invention;

FIG. 5 is a diagram showing a fourth embodiment of a semiconductor package according to the present invention;

FIG. 6 is a diagram illustrating an example of a conventional semiconductor package.

FIG. 7 is a diagram illustrating an example of a conventional semiconductor package.

FIG. 8 is a diagram illustrating an example of a conventional semiconductor package.

FIG. 9 is a diagram showing characteristics of a conventional semiconductor package.

[Explanation of symbols]

7 base, 8a dielectric substrate, 8b dielectric substrate, 8
c dielectric substrate, 8d dielectric substrate, 8e dielectric substrate,
9 Front and back conduction through holes, 10 seal rings, 11
Through hole with resistance film formed.

Claims (4)

[Claims] In a semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by laminating dielectric substrates having front and back conductive through holes, a plurality of front and back conductive through holes forming the cavity are provided. A semiconductor package comprising a plurality of through-holes each having a resistive film formed at an interval of approximately 1/4 transmission wavelength of a signal frequency in the cavity direction. 2. In a semiconductor package having a semiconductor element and a dielectric circuit board mounted in a cavity formed by laminating dielectric substrates having front and back conductive through holes, a plurality of front and back conductive through holes forming the cavity are provided. The signal frequency is approximately 1 in the direction around the cavity.
A semiconductor package comprising a plurality of through-holes having a resistance film formed at intervals of / 4 transmission wavelength. 3. A semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by laminating dielectric substrates having front and back conductive through holes, wherein a plurality of front and back conductive through holes forming the cavity are provided. With an interval of approximately 1/4 transmission wavelength of the signal frequency in the cavity direction and the peripheral direction of the cavity,
A semiconductor package comprising a plurality of through holes having a resistance film formed thereon. 4. A semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by laminating dielectric substrates having front and back conductive through-holes, wherein a plurality of through holes of different lengths each having a resistive film are formed. 4. The semiconductor package according to claim 1, wherein holes are arranged.