JP4013432B2 - Semiconductor package - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a package for sealing a microwave or millimeter wave integrated circuit operating in a high frequency band.
[0002]
[Prior art]
6, 7 and 8 are views showing a conventional semiconductor package. In the figure, 1 is a metal box, 2 is an input / output terminal, 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, and 5 is a resistor.
[0003]
FIG. 9 is a diagram showing characteristics of a conventional semiconductor package. In the figure, the curves a1 and a2 are when the resistor 5 is not provided in the cavity as shown in FIG. 6, the curves b1 and b2 are when the resistor 5 is provided on the cavity side wall as shown in FIG. When the resistor 5 is provided on the back surface of the cap 3 as shown in FIG. 8, the reflection characteristics and the intracavity space propagation characteristics at the input / output terminal 2 are shown.
[0004]
Next, the operation and characteristics of a conventional semiconductor package will be described. A conventional semiconductor package is a semiconductor in which a semiconductor element and a dielectric circuit board 4 are arranged in a cavity formed in a box 1 as shown in FIGS. 6, 7, and 8, an output terminal 2 is provided, and arranged inside the package. The element and dielectric circuit board 4 are electrically connected to the outside. Further, an airtight structure is obtained by sealing with a cap 3. In such a semiconductor package, there are a waveguide transmission mode in which the cutoff frequency is determined and a waveguide resonance mode in which the resonance frequency is determined depending on the dimensions in the cavity, and a signal having this resonance frequency is stored in the cavity. When this signal is coupled to the semiconductor element and the dielectric circuit board 4, abnormal oscillation or destruction is caused, and an external circuit or the like is adversely affected. Therefore, in the conventional package, as shown in FIGS. 7 and 8, the resonance is suppressed by providing the resistor 5 in the cavity.
[0005]
Next, the characteristics of the conventional semiconductor package will be supplemented. The reflection characteristics at the input / output terminal 2 of each conventional semiconductor package are as shown by the curves a1, b1 and c1 in FIG. 9, and when the resistor 5 is not present in the cavity (curve a1 in the case of FIG. 6), resonance occurs. When there is a frequency and the cavity resistor 5 is present (in the case of FIGS. 7 and 8, curves b1 and c1), it becomes possible to suppress resonance. Further, the spatial propagation characteristics of each conventional semiconductor package are as shown by the curves a2, b2 and c2 in FIG. 9, and abnormal oscillation occurs when there is no resistor 5 in the cavity (curve a2 in FIG. 6). In the case where the resistor 5 exists in the cavity (curves b2 and c2 in the case of FIGS. 7 and 8), high spatial isolation cannot be ensured (the loss of propagation characteristics cannot be increased), so that the semiconductor element and the dielectric circuit board 4 When the gain is high or the stability is low, there is a possibility that abnormal oscillation, destruction, etc. may occur when coupled with a frequency band with low spatial isolation. As described above, in the conventional semiconductor package, the resonance is suppressed by providing the resistor 5 in the cavity. However, since high spatial isolation cannot be secured, abnormal oscillation occurs when a high gain semiconductor circuit or the like is mounted. There was a possibility of destruction, etc., which was a problem.
[0006]
[Problems to be solved by the invention]
As described above, in the conventional semiconductor package, the resonance was suppressed by providing a resistor in the cavity. However, because high spatial isolation cannot be secured, abnormal oscillation occurs when a high gain semiconductor circuit is mounted. There is a possibility that destruction, etc. may occur, which has been a problem.
[0007]
The present invention has been made to solve such a problem, and provides a semiconductor package capable of suppressing abnormal oscillation, destruction, and the like even when a high-gain semiconductor circuit or the like is mounted.
[0008]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a semiconductor package having a resistive film with a spacing of approximately 1/4 transmission wavelength of a signal frequency in a cavity direction from a plurality of front and back conductive through holes provided when a cavity is formed in a laminated dielectric substrate. A plurality of formed through holes are arranged.
[0009]
The semiconductor package according to the second invention has an interval of approximately 1/4 transmission wavelength of the signal frequency in the circumferential direction of the cavity from a plurality of front and back conductive through holes provided when the cavity is formed in the laminated dielectric substrate. A plurality of through holes in which a resistance film is formed are arranged.
[0010]
According to a third aspect of the present invention, there is provided a semiconductor package in which approximately 1/4 transmission of a signal frequency is performed in two directions, a cavity direction and a cavity peripheral direction, from a plurality of front and back conductive through holes provided when a cavity is formed in a laminated dielectric substrate. A plurality of through-holes in which a resistance film is formed are arranged with wavelength intervals.
[0011]
According to a fourth aspect of the present invention, there is provided a semiconductor package having a resistance of approximately 1/4 transmission wavelength of a signal frequency in a cavity direction from a plurality of front and back conductive through holes provided when a cavity is formed in a laminated dielectric substrate. A plurality of through holes having different lengths in which a film is formed are arranged.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1 FIG.
FIG. 1 is a configuration diagram of a semiconductor package showing Embodiment 1 of the present invention, in which 2 is an input / output terminal, 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, Reference numeral 8e denotes a dielectric substrate that forms a cavity by stacking, 9 is a through hole on the front and back sides, 10 is a seal ring, and 11 is a through hole in which a resistance film is formed.
[0013]
FIG. 2 is a diagram showing the characteristics of the semiconductor package of the present invention. In the figure, curves a1, a2, b1, b2, c1, and c2 are the same as those in FIG. 9, and curves d1 and d2 are reflection characteristics and intra-cavity space propagation characteristics at the input / output terminal 2 of the semiconductor package of the present invention.
[0014]
Next, the operation and characteristics will be described. As shown in FIG. 1, dielectric substrates 8 a to 8 e are stacked on the base 7, and cavities are formed by front and back conductive through holes 9. Further, the semiconductor element and the dielectric circuit board 4 provided inside the package with the output terminals 2 are electrically connected to the outside. Further, an airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through-hole 11 in which the resistance film is formed is arranged from the front and back conductive through-holes 9 in the cavity direction with an interval t of approximately 1/4 transmission wavelength of the signal frequency F0, and suppresses resonance in the cavity.
[0015]
Next, the characteristics of the semiconductor package of the present invention will be supplemented. In FIG. 2, curves a1, a2, b1, b2, c1, and c2 are as described in the prior art (FIG. 9). A curve d1 is a reflection characteristic at the input / output terminal 2 of the semiconductor package of the present invention, and a curve d2 is a space propagation characteristic in the cavity. As shown in the figure, according to this semiconductor package, resonance due to the dimensions in the cavity can be suppressed, and high spatial isolation can be secured in terms of spatial propagation characteristics, so when a high gain semiconductor circuit or the like is mounted However, it is possible to suppress abnormal oscillation, destruction, and the like.
[0016]
Further, the spatial propagation characteristics can be adjusted by the arrangement interval of the plurality of through holes 11 formed with the resistance film.
[0017]
Even in a semiconductor package without the base 7 and the seal ring 10, the same effect as described above can be obtained.
[0018]
Embodiment 2. FIG.
FIG. 3 is a configuration diagram of a semiconductor package showing Embodiment 2 of the present invention. In the figure, 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, and 8a to 8e are stacked to form a cavity. , 9 is a front and back conductive through hole, 10 is a seal ring, and 11 is a through hole in which a resistive film is formed.
[0019]
Next, the operation and characteristics will be described. As shown in FIG. 3, dielectric substrates 8 a to 8 e are stacked on the base 7, and cavities are formed by front and back conductive through holes 9. In addition, an output terminal (not shown in the drawing) is provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, an airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through-hole 11 formed with the resistive film is disposed from the front and back conductive through-holes 9 in the circumferential direction of the cavity with an interval t of approximately 1/4 transmission wavelength of the signal frequency F0, as shown by the curves d1 and d2 in FIG. The resonance in the cavity can be suppressed, and high spatial isolation can be secured for the spatial propagation characteristics. Therefore, according to this semiconductor package, even when a high-gain semiconductor circuit or the like is mounted inside the cavity, it is possible to suppress abnormal oscillation, destruction, and the like.
[0020]
Embodiment 3 FIG.
FIG. 4 is a configuration diagram of a semiconductor package showing Embodiment 3 of the present invention, in which 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, and 8a to 8e are stacked to form a cavity. , 9 is a front and back conductive through hole, 10 is a seal ring, and 11 is a through hole in which a resistive film is formed.
[0021]
Next, the operation and characteristics will be described. As shown in FIG. 4, dielectric substrates 8 a to 8 e are stacked on the base 7, and a cavity is formed by the front and back conductive through holes 9. In addition, an output terminal (not shown in the drawing) is provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, an airtight structure is obtained by sealing with the seal ring 10 and the cap 3. The through-hole 11 formed with the resistance film is disposed with an interval t of approximately ¼ transmission wavelength of the signal frequency F0 in two directions from the front and back conductive through-holes 9 in the cavity direction and the circumferential direction of the cavity, and the curve d1 in FIG. As shown by the curve d2, resonance in the cavity can be suppressed, and high spatial isolation can be ensured for the spatial propagation characteristics. Therefore, according to this semiconductor package, even when a high-gain semiconductor circuit or the like is mounted inside the cavity, it is possible to suppress abnormal oscillation, destruction, and the like. Further, even when a plurality of cavities are adjacent to each other, leakage of a signal to the adjacent cavities can be suppressed by the through holes 11 formed in the peripheral direction of the cavities and formed with a resistance film.
[0022]
Embodiment 4 FIG.
FIG. 5 is a configuration diagram of a semiconductor package showing Embodiment 4 of the present invention. 3 is a cap, 4 is a semiconductor element and a dielectric circuit board, 7 is a base, and 8a to 8e are stacked to form a cavity. A dielectric substrate, 9 is a through hole on the front and back sides, 10 is a seal ring, and 11 is a through hole in which a resistance film is formed.
[0023]
Next, the operation and characteristics will be described. As shown in FIG. 5, dielectric substrates 8 a to 8 e are stacked on the base 7, and cavities are formed by front and back conductive through holes 9. In addition, an output terminal (not shown in the drawing) is provided to electrically connect the semiconductor element and the dielectric circuit board 4 disposed inside the package to the outside. Further, an airtight structure is obtained by sealing with the seal ring 10 and the cap 3.
The through hole 11 in which the resistance film is formed is arranged in the cavity direction from the front and back conductive through holes 9 with an interval t of approximately ¼ transmission wavelength of the signal frequency F 0, as shown by a curve d 1 and a curve d 2 in FIG. Resonance in the cavity can be suppressed, and high spatial isolation can be ensured for spatial propagation characteristics. Therefore, according to this semiconductor package, even when a high-gain semiconductor circuit or the like is mounted inside the cavity, it is possible to suppress abnormal oscillation, destruction, and the like.
[0024]
In the first to third embodiments, a waveguide transmission mode and a waveguide resonance mode are newly generated due to the size of the space including the dielectric surrounded by the plurality of through holes 11 in which the resistive film is formed. Resonance may occur. However, according to the semiconductor package of the fourth embodiment, since the lengths of the plurality of through holes 11 formed with the resistance film are different, a space surrounded by the plurality of through holes 11 formed with the resistance film is not formed. A new waveguide transmission mode and waveguide resonance mode are not generated. Therefore, according to this semiconductor package, suppression of resonance in the cavity and securing of high spatial isolation can be achieved more effectively.
[0025]
【The invention's effect】
According to the first aspect of the present invention, the resistive film is formed at intervals of approximately 1/4 transmission wavelength of the signal frequency in the cavity direction from the plurality of front and back conductive through holes provided to form the cavity in the laminated dielectric substrate. By arranging multiple through-holes, resonance due to the dimensions in the cavity can be suppressed and high spatial isolation can be secured for spatial propagation characteristics. However, it is possible to suppress abnormal oscillation, destruction, and the like.
[0026]
Further, according to the second invention, from a plurality of front and back conductive through holes provided to form a cavity in the laminated dielectric substrate, with an interval of approximately 1/4 transmission wavelength of the signal frequency in the circumferential direction of the cavity, By arranging a plurality of through-holes with a resistive film, resonance due to the dimensions in the cavity can be suppressed, and high spatial isolation can be ensured for spatial propagation characteristics. Even when is mounted, abnormal oscillation, destruction, etc. can be suppressed.
[0027]
According to the third aspect of the invention, from a plurality of front and back conductive through holes provided for forming a cavity in the laminated dielectric substrate, approximately 1/4 transmission wavelength of the signal frequency in the cavity direction and the circumferential direction of the cavity. By arranging a plurality of through-holes with a resistive film at an interval of, it is possible to suppress resonance due to the dimensions in the cavity and to ensure high spatial isolation in terms of spatial propagation characteristics. Even when the semiconductor circuit is mounted, it is possible to suppress abnormal oscillation, destruction, and the like. Further, even when a plurality of cavities are adjacent to each other, signal leakage to the adjacent cavities can be suppressed.
[0028]
According to the fourth aspect of the present invention, the resistive film has an interval of approximately 1/4 transmission wavelength of the signal frequency in the cavity direction from the plurality of front and back conductive through holes provided for forming the cavity in the laminated dielectric substrate. By arranging a plurality of through-holes having different lengths, it is possible to more effectively suppress resonance due to the dimensions in the cavity than in the first to third inventions, and also to achieve high spatial isotropy in terms of spatial propagation characteristics. Therefore, even when a high gain semiconductor circuit or the like is mounted, it is possible to suppress abnormal oscillation, destruction, and the like.
[Brief description of the drawings]
FIG. 1 is a diagram showing a first embodiment of a semiconductor package according to the present invention.
FIG. 2 is a diagram showing characteristics of a semiconductor package according to the present invention.
FIG. 3 is a diagram showing a second embodiment of a semiconductor package according to the present invention.
FIG. 4 is a diagram showing a third embodiment of a semiconductor package according to the present invention.
FIG. 5 is a diagram showing a semiconductor package according to a fourth embodiment of the present invention.
FIG. 6 is a diagram showing an example of a conventional semiconductor package.
FIG. 7 is a diagram showing an example of a conventional semiconductor package.
FIG. 8 is a diagram showing an example of a conventional semiconductor package.
FIG. 9 is a diagram showing characteristics of a conventional semiconductor package.
[Explanation of symbols]
7 Base, 8a Dielectric substrate, 8b Dielectric substrate, 8c Dielectric substrate, 8d Dielectric substrate, 8e Dielectric substrate, 9 Front and back conductive through hole, 10 Seal ring, 11 Through hole in which a resistance film is formed.

Claims (4)

  In a semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by stacking dielectric substrates having front and back conductive through holes, a direction from the plurality of front and back conductive through holes forming the cavity toward the cavity A semiconductor package characterized in that a plurality of through-holes having a resistance film are arranged at intervals of approximately 1/4 transmission wavelength of the signal frequency.   In a semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by laminating dielectric substrates having front and back conductive through holes, the plurality of front and back conductive through holes forming the cavity form a peripheral direction of the cavity. A semiconductor package characterized in that a plurality of through-holes having a resistance film are arranged at intervals of approximately 1/4 transmission wavelength of the signal frequency.   In a semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by stacking dielectric substrates having front and back conductive through holes, a direction from the plurality of front and back conductive through holes forming the cavity toward the cavity And a plurality of through-holes each having a resistive film disposed at intervals of approximately 1/4 transmission wavelength of the signal frequency in the peripheral direction of the cavity.   In a semiconductor package in which a semiconductor element and a dielectric circuit board are mounted in a cavity formed by stacking dielectric substrates having front and back conductive through holes, a plurality of through holes having different lengths and having a resistance film are disposed. The semiconductor package according to any one of claims 1 to 3.

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