JP2962100B2 - Method of forming insulating layer on lead frame - Google Patents
Method of forming insulating layer on lead frameInfo
- Publication number
- JP2962100B2 JP2962100B2 JP12585493A JP12585493A JP2962100B2 JP 2962100 B2 JP2962100 B2 JP 2962100B2 JP 12585493 A JP12585493 A JP 12585493A JP 12585493 A JP12585493 A JP 12585493A JP 2962100 B2 JP2962100 B2 JP 2962100B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- bus bar
- adhesive
- lead frame
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はリードフレームへの絶縁
層形成方法に係り、特にバスバーに用いるのに適した絶
縁層形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an insulating layer on a lead frame, and more particularly to a method for forming an insulating layer suitable for use in a bus bar.
【０００２】[0002]
【従来の技術】リードフレームには、デバイスホールま
で延長するインナーリードよりも更にデバイスホール側
に配設されたバスバー（電源接続用の母線リード）をも
つものがある。図２は、そのようなバスバー付きリード
フレームを用いて製造された半導体装置の断面図を示
す。2. Description of the Related Art Some lead frames have busbars (bus leads for power supply connection) which are further provided on the device hole side than the inner leads extending to the device hole. FIG. 2 is a cross-sectional view of a semiconductor device manufactured using such a lead frame with a bus bar.
【０００３】同図に示すようにインナーリード１の前方
に、バスバー２を有しており、このバスバー２及びイン
ナーリード１の先端部に、接着剤を両面塗布した絶縁性
フィルム３を貼り付け、この絶縁性フィルム３を介して
半導体チップ４が固定されている。半導体チップ４上に
リードが載っていることから、この構造はＬＯＣ（Lead
on chip）と呼ばれている。そして、半導体チップ４の
ボンディングパッドと、インナーリード１及びバスバー
２との間がループ状のボンディングワイヤ５によって結
線され、樹脂封止される。As shown in FIG. 1, a bus bar 2 is provided in front of an inner lead 1, and an insulating film 3 coated with an adhesive on both sides is attached to the end of the bus bar 2 and the inner lead 1. The semiconductor chip 4 is fixed via the insulating film 3. Since the leads are mounted on the semiconductor chip 4, this structure has a LOC (Lead)
on chip). Then, the bonding pads of the semiconductor chip 4 and the inner leads 1 and the bus bars 2 are connected by loop-shaped bonding wires 5 and are sealed with a resin.
【０００４】ところで、バスバー２を有するリードフレ
ームでは、半導体チップ４とインナーリード１とをワイ
ヤボンドするとき、バスバー２を越えてワイヤボンドを
行うため、ボンディングワイヤ５とバスバー２の接触防
止を図る必要がある。In the lead frame having the bus bar 2, when the semiconductor chip 4 and the inner lead 1 are wire-bonded, since the wire bonding is performed beyond the bus bar 2, it is necessary to prevent the contact between the bonding wire 5 and the bus bar 2. There is.
【０００５】この接触防止を図るために、先にわれわれ
は、バスバーへの絶縁性接着剤塗布法を提案した（特開
平５−１３６５４号公報）。これは図３に示すように、
絶縁フィルム３上にあって、インナーリード１の前方に
配設されたバスバー２に対して、その上から、ディスペ
ンサノズル６より吐出した絶縁性接着剤７を塗布するも
のである。そして、図４に示すように、バスバー２と接
続する箇所を除いた残部に絶縁性接着剤７を塗布するこ
とで、半導体チップのボンディングパッド８とインナー
リード１とを接続するループ状のボンディングワイヤ５
が、中間にあるバスバー２と短絡しないようにしてい
る。[0005] In order to prevent this contact, we have previously proposed a method of applying an insulating adhesive to a bus bar (Japanese Patent Application Laid-Open No. Hei 5-13654). This is shown in FIG.
An insulating adhesive 7 discharged from a dispenser nozzle 6 is applied to the bus bar 2 disposed on the insulating film 3 and disposed in front of the inner lead 1. Then, as shown in FIG. 4, an insulating adhesive 7 is applied to the remaining portion except for a portion connected to the bus bar 2, thereby forming a loop-shaped bonding wire connecting the bonding pad 8 of the semiconductor chip and the inner lead 1. 5
However, it does not short-circuit with the bus bar 2 in the middle.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、ディス
ペンサを使ってバスバーの上から絶縁性接着剤をバスバ
ーに塗布する上述した従来技術には次のような問題があ
る。However, the above-mentioned prior art in which an insulating adhesive is applied to a bus bar from above the bus bar using a dispenser has the following problems.
【０００７】ディスペンサノズルによって接着剤の吐出
量をコントロールできるけれども、接着剤の粘度、塗布
圧力、室温、リードフレームの表面状態によって、接着
剤７の塗布形状は大きく影響を受け、塗布の過不足を生
じる。接着剤７が不足の場合には、図５（Ａ）に示すよ
うに、ボンディングワイヤ５と接触したときバスバー２
に短絡する虞があり、接着剤７が過剰の場合には、図５
（Ｂ）に示すように、半導体チップ４のボンディングパ
ッド８を汚染し、ワイヤボンディング不良となる虞があ
る。Although the discharge amount of the adhesive can be controlled by the dispenser nozzle, the applied shape of the adhesive 7 is greatly affected by the viscosity of the adhesive, the application pressure, the room temperature, and the surface condition of the lead frame. Occurs. When the adhesive 7 is insufficient, as shown in FIG.
If the adhesive 7 is excessive, the short circuit may occur as shown in FIG.
As shown in (B), the bonding pads 8 of the semiconductor chip 4 may be contaminated, resulting in poor wire bonding.
【０００８】なお、この問題はバスバーのみならず、リ
ードフレームの絶縁性を要求される他のリード部分に
も、またバスバーを有さないリードフレームにも共通す
る。[0008] This problem is common not only to the bus bar but also to other lead portions where the insulation properties of the lead frame are required, and also to the lead frame having no bus bar.
【０００９】本発明の目的は、絶縁性接着剤を下面塗布
の状態で乾燥させることによって、リード部分の表面に
均一に且つ過不足なく絶縁層を形成することが可能なリ
ードフレームへの絶縁層形成方法を提供することにあ
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide an insulating layer for a lead frame in which an insulating adhesive is dried in a state of being coated on a lower surface, so that an insulating layer can be formed uniformly on the surface of a lead portion without excess or shortage. It is to provide a forming method.
【００１０】また、本発明の目的は、バスバーに適用す
ることによって、絶縁信頼性の高い健全な絶縁機能を有
するリードフレームへの絶縁層形成方法を提供すること
にある。Another object of the present invention is to provide a method of forming an insulating layer on a lead frame having a sound insulation function with high insulation reliability by applying to a bus bar.
【００１１】また、本発明の目的は、リード部分の表面
を包み込む様に塗布することによって、高信頼性を得る
ことが可能なリードフレームへの絶縁層形成方法を提供
することにある。It is another object of the present invention to provide a method for forming an insulating layer on a lead frame, which can obtain high reliability by coating so as to cover the surface of a lead portion.
【００１２】[0012]
【課題を解決するための手段】本発明のリードフレーム
への絶縁層形成方法は、リードフレームの絶縁性接着剤
を塗布すべきリードのリード面を下に向け、そのリード
面に絶縁性接着剤を塗布し、塗布後、そのリード面を下
に向けたまま乾燥してリードに絶縁層を形成するように
したものである。According to the method of forming an insulating layer on a lead frame of the present invention, the lead surface of the lead to which the insulating adhesive of the lead frame is to be applied is directed downward, and the insulating adhesive is applied to the lead surface. Is applied, and then dried with the lead surface facing down to form an insulating layer on the lead.
【００１３】特に、リードフレームがデバイスホールま
で延長するインナーリードと、このインナーリードより
も更にデバイスホール側に配設されたバスバーとを有す
るリードフレームである場合に、絶縁層が形成されるリ
ードフレームのリードを、バスバーとすることができ
る。In particular, when the lead frame has an inner lead extending to a device hole and a bus bar further disposed on the device hole side than the inner lead, the lead frame on which the insulating layer is formed Can be a bus bar.
【００１４】なお、絶縁性接着剤の塗布方法には転写等
の印刷法を用いることもできるが、リード部分の上面を
包み込むように塗布するためには、ディップ方式とする
ことが好ましい。Although a printing method such as transfer can be used as a method of applying the insulating adhesive, it is preferable to use a dipping method in order to cover the upper surface of the lead portion.
【００１５】[0015]
【作用】リードフレームの絶縁性接着剤を塗布すべきリ
ードのリード面を下向きにして、その表面にディップ方
式や印刷法により絶縁性接着剤を塗布する場合、下面塗
布であるために、絶縁性接着剤の粘度、塗布圧力、室
温、リードフレームの表面状態によって塗布形状は余り
影響を受けないが、必要とされる塗布厚に合わせた粘度
に設定することはできる。[Function] If the lead surface of the lead to which the insulating adhesive of the lead frame is to be applied is directed downward, and the insulating adhesive is applied to the surface by a dipping method or a printing method, the lower surface is applied. The shape of the coating is not so affected by the viscosity of the adhesive, the coating pressure, the room temperature, and the surface condition of the lead frame, but the viscosity can be set according to the required coating thickness.
【００１６】また、下面塗布状態のまま乾燥させると、
過剰分は重力により落下するので、塗布面に接着剤が均
一に塗布される。したがって、塗布の過不足がなく、必
要とするリード面に均一な絶縁層を形成できる。Further, when the drying is performed while the lower surface is coated,
Since the excess falls due to gravity, the adhesive is uniformly applied to the application surface. Therefore, there is no excess or deficiency of application, and a uniform insulating layer can be formed on a required lead surface.
【００１７】絶縁層が形成されるリードフレームのリー
ドが、バスバーである場合には、そのバスバー上に形成
される絶縁層が均一に塗布されて接着剤の不足箇所が生
じないので、これを跨ぐループ状のボンディングワイヤ
と短絡する虞がなくなる。また、接着剤の過剰分が半導
体チップのボンディングパッドに流れ込んでボンディン
グパッドを汚染してワイヤボンドを不良とするようなこ
ともなくなる。その結果、健全な絶縁機能が発揮され、
絶縁信頼性が大幅に向上する。When the lead of the lead frame on which the insulating layer is formed is a bus bar, the insulating layer formed on the bus bar is uniformly applied and no shortage of the adhesive occurs. There is no danger of short-circuiting with the loop-shaped bonding wire. In addition, it is possible to prevent the excessive amount of the adhesive from flowing into the bonding pads of the semiconductor chip and contaminating the bonding pads to cause a defective wire bond. As a result, a sound insulation function is exhibited,
The insulation reliability is greatly improved.
【００１８】また、特に塗布方法にディップ方法を採用
すると、ボンディングワイヤ通過部のバスバー表面を包
み込む様に塗布することが簡単にできるので、高信頼性
を容易に得ることができる。In particular, when a dipping method is adopted as the coating method, the coating can be easily performed so as to cover the surface of the bus bar at the portion where the bonding wire passes, so that high reliability can be easily obtained.
【００１９】[0019]
【実施例】以下、本発明のリードフレームへの絶縁層形
成方法の実施例を図面を用いて説明する。図１は本実施
例による接着剤塗布方法のプロセスを示した図であっ
て、（Ａ）は接着剤ディップ前の状況を示した要部断面
図、（Ｂ）は接着剤ディップ状況を示した要部断面図、
（Ｃ）は乾燥状態を示す要部断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for forming an insulating layer on a lead frame according to the present invention will be described below with reference to the drawings. 1A and 1B are views showing a process of an adhesive application method according to the present embodiment, in which FIG. 1A is a cross-sectional view of a main part showing a state before an adhesive dip, and FIG. 1B is a view showing an adhesive dip state. Sectional view of the main part,
(C) is a sectional view of a principal part showing a dry state.
【００２０】バスバー２は、半導体チップのボンディン
グパッドとインナーリード１との間の隙間を埋める形で
細長く存在するリードであり、かつ、インナーリード１
に結線されるボンディングワイヤは、当該バスバー２を
跨ぐ形で半導体チップのボンディングパッドからループ
状に伸びてくる（図２参照）。このため、ボンディング
ワイヤ通過部のバスバー表面に絶縁層が必要とされる。The bus bar 2 is an elongated lead that fills a gap between the bonding pad of the semiconductor chip and the inner lead 1.
Are extended from the bonding pads of the semiconductor chip in a loop so as to straddle the bus bar 2 (see FIG. 2). Therefore, an insulating layer is required on the surface of the bus bar at the bonding wire passage.
【００２１】バスバー２の表面に絶縁性接着剤７を塗布
するために、先ず、予めバスバー２の絶縁性接着剤を塗
布すべき部分以外に塗布マスクを施して接着剤が塗布さ
れないようにしておく。しかる後に、図１（Ａ）に示す
ようにリードフレーム１１を、バスバー２のリード面を
下に向けて液溜め１３上の位置にもってくる。この場
合、リードフレーム１１の方を移動しても、液溜め９の
方を移動してもよい。接着剤１１は、例えば熱可塑性樹
脂であるポリイミド、ポリエーテルアミド、或いはポリ
エーテルアミドイミドからなり、樹脂は溶剤で溶かされ
ると共に加熱されて液状乃至ワニス状にされている。In order to apply the insulating adhesive 7 to the surface of the bus bar 2, first, a coating mask is applied in advance to a portion other than the portion of the bus bar 2 where the insulating adhesive is to be applied so that the adhesive is not applied. . Thereafter, as shown in FIG. 1A, the lead frame 11 is brought to a position above the liquid reservoir 13 with the lead surface of the bus bar 2 facing downward. In this case, the lead frame 11 may be moved, or the liquid reservoir 9 may be moved. The adhesive 11 is made of, for example, a thermoplastic resin such as polyimide, polyetheramide, or polyetheramideimide. The resin is dissolved in a solvent and heated to be in a liquid or varnish form.
【００２２】次いで、（Ｂ）に示すようにそのバスバー
２のリード面を下向きにして液溜め９内の絶縁性接着剤
７にディップする。このとき、接着剤７を塗布するリー
ド面を下向きにし、塗布するバスバー２を少なくともリ
ード面が接着剤７中に埋まるようにディップする。ま
た、液溜め９は水平に設置して接着剤７の液面を水平と
し、かつバスバー２も水平にしてディップすることが好
ましい。Next, as shown in FIG. 2B, the bus bar 2 is dipped in the insulating adhesive 7 in the liquid reservoir 9 with the lead surface thereof facing downward. At this time, the lead surface on which the adhesive 7 is applied is turned downward, and the bus bar 2 to be applied is dipped so that at least the lead surface is buried in the adhesive 7. In addition, it is preferable that the liquid reservoir 9 is installed horizontally so that the liquid level of the adhesive 7 is horizontal, and the bus bar 2 is also horizontal so as to be dipped.
【００２３】そして、（Ｃ）に示すように、リードフレ
ームを液溜め９から引上げた後、そのままの向きで乾燥
ヒータ１０により塗布した絶縁性接着剤７を乾燥して絶
縁層を形成する。接着剤７中へのディップの深さが、バ
スバー２の板厚の１／１０〜１／２程度であれば、乾燥
後のリードのコーナ部は、ほぼ均一に絶縁被膜が形成さ
れる。また接着剤７の粘度を選択することによって被膜
厚さを最大１００μｍ程度まで厚くすることができる。Then, as shown in (C), after the lead frame is pulled out of the liquid reservoir 9, the insulating adhesive 7 applied by the drying heater 10 in the same direction is dried to form an insulating layer. If the depth of the dip in the adhesive 7 is about 1/10 to 1/2 of the thickness of the bus bar 2, an insulating film is formed almost uniformly at the corner of the lead after drying. Further, by selecting the viscosity of the adhesive 7, the coating thickness can be increased up to about 100 μm.
【００２４】このようにリードフレーム１１のバスバー
２に、ディップ方式により接着剤７を下面塗布するよう
にしたので、バスバー２の所定リード面にディップによ
って所定厚の接着剤７が塗布できる。しかも下面塗布の
ままの状態で乾燥させるので、接着剤７が不要な部分に
塗布されるのが防止できる。また、接着剤の粘度、塗布
圧力、室温、リードフレームの表面状態によって接着剤
の塗布形状は影響を受けず、塗布の過不足が生じ難い。Since the lower surface of the adhesive 7 is applied to the bus bar 2 of the lead frame 11 by the dipping method in this manner, the adhesive 7 having a predetermined thickness can be applied to the predetermined lead surface of the bus bar 2 by dipping. Moreover, since the drying is performed while the lower surface is being applied, the adhesive 7 can be prevented from being applied to unnecessary portions. Further, the adhesive application shape is not affected by the viscosity of the adhesive, the application pressure, the room temperature, and the surface state of the lead frame, and the application is not likely to be excessive or insufficient.
【００２５】特に、接着剤７の塗布層は、粘度等をかえ
てやることにより、薄くすることも厚くすることもでき
る。また、バスバー２のリード面粗さを粗くしたり、或
いは溝を設けたりすることによっても接着剤７の厚塗り
が可能となる。In particular, the applied layer of the adhesive 7 can be made thinner or thicker by changing the viscosity or the like. The thick coating of the adhesive 7 can also be achieved by increasing the roughness of the lead surface of the bus bar 2 or by providing a groove.
【００２６】なお、上記実施例ではディップ方式により
塗布するようにしたが、パッドや塗布ロール等へ転写
（印刷）した接着剤を下面より塗布するようにしてもよ
く、これらによっても同様の塗布形状を得ることができ
る。In the above embodiment, the adhesive is applied by the dipping method. However, the adhesive transferred (printed) to a pad or an application roll may be applied from the lower surface. Can be obtained.
【００２７】特に、パッドによる転写を使用する場合に
は、パッド形状をＬＯＣ用の絶縁フィルムと同一形状と
することで、絶縁フィルムを貼付けたのと同じ機能をも
たせることができる。換言すれば、ＬＯＣ用の絶縁フィ
ルムを本発明方法によって直接リードに形成することが
できる。そのため、高価な絶縁フィルムを使用する必要
がなくなるので、安価に半導体装置を製造することがで
きる。In particular, when the transfer using a pad is used, the same function as that of attaching the insulating film can be provided by making the pad shape the same as that of the LOC insulating film. In other words, the insulating film for LOC can be formed directly on the lead by the method of the present invention. Therefore, it is not necessary to use an expensive insulating film, so that a semiconductor device can be manufactured at low cost.
【００２８】また、本発明方法を用いてバスバー２以外
のリード部、あるいはバスバーを有さないリードフレー
ムのリードにも絶縁層を施すことも可能である。その場
合、所定範囲乃至形状で塗布するためにリード部側に塗
布マスクパターンを形成しておいてもよい。Further, it is also possible to apply an insulating layer to a lead portion other than the bus bar 2 or a lead of a lead frame having no bus bar by using the method of the present invention. In that case, a coating mask pattern may be formed on the lead portion side in order to apply in a predetermined range or shape.
【００２９】[0029]
【発明の効果】（１）請求項１に記載の発明によれば、
下面塗布の状態で乾燥するためリードの厚み方向や必要
部以外への接着剤の回り込みも不足部分もなく、均一に
絶縁層を形成できる。(1) According to the first aspect of the present invention,
Since the drying is performed in the state of application of the lower surface, there is no sneakage of the adhesive in a direction other than the thickness direction of the lead or a necessary portion, and the insulating layer can be formed uniformly.
【００３０】（２）請求項２に記載の発明によれば、絶
縁層が形成されるリードをバスバーとしたので、バスバ
ーを跨ぐワイヤボンディングとの接触や、半導体チップ
への流れ込みによる汚染もなく、絶縁信頼性の高い健全
な絶縁機能を得ることができる。(2) According to the second aspect of the present invention, since the lead on which the insulating layer is formed is a bus bar, there is no contamination due to contact with wire bonding over the bus bar or flow into the semiconductor chip. A sound insulation function with high insulation reliability can be obtained.
【００３１】（３）請求項３に記載の発明によれば、塗
布方法がディップ方式であるため、リード部分の表面を
包み込む塗布が確実に行われ、信頼性をより高めること
ができる。(3) According to the third aspect of the present invention, since the coating method is a dip method, the coating covering the surface of the lead portion is reliably performed, and the reliability can be further improved.
【図１】本発明によるリードフレームへの絶縁層形成方
法の実施例を示す工程図。FIG. 1 is a process chart showing an embodiment of a method for forming an insulating layer on a lead frame according to the present invention.
【図２】ＬＯＣ構造の半導体装置を示す断面図。FIG. 2 is a cross-sectional view illustrating a semiconductor device having a LOC structure.
【図３】従来例のディスペンサによるバスバー絶縁層形
成方法を示す説明図。FIG. 3 is an explanatory view showing a method of forming a bus bar insulating layer using a conventional dispenser.
【図４】従来例のバスバー絶縁状況を示した説明図。FIG. 4 is an explanatory diagram showing a bus bar insulation state of a conventional example.
【図５】従来例によるバスバー絶縁不足状況とバスバー
絶縁過剰状況とを示す説明図。FIG. 5 is an explanatory diagram showing a bus bar insulation insufficient state and a bus bar excessive insulation state according to a conventional example.
１ インナーリード ２ バスバー ３ 絶縁フィルム ７ 絶縁性接着剤 ８ 乾燥ヒータ ９ 液溜め １１ リードフレーム DESCRIPTION OF SYMBOLS 1 Inner lead 2 Bus bar 3 Insulating film 7 Insulating adhesive 8 Drying heater 9 Liquid reservoir 11 Lead frame
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 23/50 H01L 21/56 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 23/50 H01L 21/56
Claims (3)
きリードのリード面を下に向け、そのリード面に絶縁性
接着剤を塗布し、塗布後、リード面を下に向けたまま乾
燥してリードに絶縁層を形成することを特徴とするリー
ドフレームへの絶縁層形成方法。1. A lead frame to which an insulating adhesive of a lead frame is to be applied, with the lead surface facing down, an insulating adhesive applied to the lead surface, and dried with the lead surface facing down. Forming an insulating layer on the lead by heating.
延長するインナーリードと当該インナーリードよりも更
にデバイスホール側に配設されたバスバーとを有するリ
ードフレームであって、上記絶縁層が形成されるリード
フレームのリードが、上記バスバーである請求項１に記
載のリードフレームへの絶縁層形成方法。2. The lead frame according to claim 1, wherein said lead frame includes an inner lead extending to a device hole, and a bus bar disposed on a device hole side of said inner lead. 2. The method for forming an insulating layer on a lead frame according to claim 1, wherein the lead is the bus bar.
る請求項１または２に記載のリードフレームへの絶縁層
形成方法。3. The method for forming an insulating layer on a lead frame according to claim 1, wherein the insulating adhesive is applied by a dipping method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12585493A JP2962100B2 (en) | 1993-05-27 | 1993-05-27 | Method of forming insulating layer on lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12585493A JP2962100B2 (en) | 1993-05-27 | 1993-05-27 | Method of forming insulating layer on lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06334101A JPH06334101A (en) | 1994-12-02 |
| JP2962100B2 true JP2962100B2 (en) | 1999-10-12 |
Family
ID=14920589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12585493A Expired - Fee Related JP2962100B2 (en) | 1993-05-27 | 1993-05-27 | Method of forming insulating layer on lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2962100B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098486A (en) * | 1989-05-23 | 1992-03-24 | Hitachi Metals, Ltd. | Magnetically anisotropic hotworked magnet and method of producing same |
-
1993
- 1993-05-27 JP JP12585493A patent/JP2962100B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06334101A (en) | 1994-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5691567A (en) | Structure for attaching a lead frame to a heat spreader/heat slug structure | |
| US5717252A (en) | Solder-ball connected semiconductor device with a recessed chip mounting area | |
| TW502348B (en) | Semiconductor device having reinforced coupling between solder balls and substrate | |
| US20010018234A1 (en) | Gravitationally-assisted control of spread of viscous material applied to semiconductor assembly components | |
| JP4416874B2 (en) | Manufacturing method of semiconductor chip | |
| KR960011644B1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2962100B2 (en) | Method of forming insulating layer on lead frame | |
| JP3306981B2 (en) | Method for applying adhesive to lead frame for semiconductor device | |
| JP2902497B2 (en) | Manufacturing method of hybrid integrated circuit board | |
| JP3064850B2 (en) | Lead frame for semiconductor device | |
| JPH03228355A (en) | Substrate of hybrid ic | |
| JPH04273464A (en) | Mounting of semiconductor chip | |
| JP2998484B2 (en) | Lead frame for semiconductor device | |
| JPS63244747A (en) | Resin sealed integrated circuit device and manufacture thereof | |
| JP3341581B2 (en) | Lead frame for semiconductor device | |
| JPH06342817A (en) | Semiconductor device | |
| JPS58182854A (en) | Resin-sealed semiconductor device and manufacture thereof | |
| JPH0440277Y2 (en) | ||
| JPS6080258A (en) | Manufacture of resin-sealed type semiconductor device | |
| JPS6030195A (en) | Method of connecting lead | |
| JP2862108B2 (en) | Semiconductor integrated circuit | |
| JPH05166871A (en) | Semiconductor device | |
| JPH1050882A (en) | Chip carrier and device and method for manufacturing the same | |
| JPH0225251Y2 (en) | ||
| JPH03112156A (en) | Hybrid integrated circuit device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |