JPH06334101A - Method of forming insulating layer onto - Google Patents
Method of forming insulating layer ontoInfo
- Publication number
- JPH06334101A JPH06334101A JP12585493A JP12585493A JPH06334101A JP H06334101 A JPH06334101 A JP H06334101A JP 12585493 A JP12585493 A JP 12585493A JP 12585493 A JP12585493 A JP 12585493A JP H06334101 A JPH06334101 A JP H06334101A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- bus bar
- adhesive
- lead frame
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はリードフレームへの絶縁
層形成方法に係り、特にバスバーに用いるのに適した絶
縁層形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming an insulating layer on a lead frame, and more particularly to a method of forming an insulating layer suitable for use in a bus bar.
【０００２】[0002]
【従来の技術】リードフレームには、デバイスホールま
で延長するインナーリードよりも更にデバイスホール側
に配設されたバスバー（電源接続用の母線リード）をも
つものがある。図２は、そのようなバスバー付きリード
フレームを用いて製造された半導体装置の断面図を示
す。2. Description of the Related Art Some lead frames have a bus bar (bus bar lead for power supply connection) arranged closer to the device hole than an inner lead extending to the device hole. FIG. 2 shows a sectional view of a semiconductor device manufactured using such a lead frame with a bus bar.
【０００３】同図に示すようにインナーリード１の前方
に、バスバー２を有しており、このバスバー２及びイン
ナーリード１の先端部に、接着剤を両面塗布した絶縁性
フィルム３を貼り付け、この絶縁性フィルム３を介して
半導体チップ４が固定されている。半導体チップ４上に
リードが載っていることから、この構造はＬＯＣ（Lead
on chip）と呼ばれている。そして、半導体チップ４の
ボンディングパッドと、インナーリード１及びバスバー
２との間がループ状のボンディングワイヤ５によって結
線され、樹脂封止される。As shown in the figure, a bus bar 2 is provided in front of the inner lead 1, and an insulating film 3 coated with an adhesive on both sides is attached to the tip of the bus bar 2 and the inner lead 1. The semiconductor chip 4 is fixed via the insulating film 3. Since the leads are mounted on the semiconductor chip 4, this structure is LOC (Lead
on chip). Then, the bonding pad of the semiconductor chip 4 and the inner lead 1 and the bus bar 2 are connected by a loop-shaped bonding wire 5 and resin-sealed.
【０００４】ところで、バスバー２を有するリードフレ
ームでは、半導体チップ４とインナーリード１とをワイ
ヤボンドするとき、バスバー２を越えてワイヤボンドを
行うため、ボンディングワイヤ５とバスバー２の接触防
止を図る必要がある。By the way, in the lead frame having the bus bar 2, when the semiconductor chip 4 and the inner lead 1 are wire-bonded, the wire bonding is performed beyond the bus bar 2, so that it is necessary to prevent contact between the bonding wire 5 and the bus bar 2. There is.
【０００５】この接触防止を図るために、先にわれわれ
は、バスバーへの絶縁性接着剤塗布法を提案した（特開
平５−１３６５４号公報）。これは図３に示すように、
絶縁フィルム３上にあって、インナーリード１の前方に
配設されたバスバー２に対して、その上から、ディスペ
ンサノズル６より吐出した絶縁性接着剤７を塗布するも
のである。そして、図４に示すように、バスバー２と接
続する箇所を除いた残部に絶縁性接着剤７を塗布するこ
とで、半導体チップのボンディングパッド８とインナー
リード１とを接続するループ状のボンディングワイヤ５
が、中間にあるバスバー２と短絡しないようにしてい
る。In order to prevent this contact, we previously proposed a method of applying an insulating adhesive to a bus bar (Japanese Patent Laid-Open No. 13654/1993). This is as shown in Figure 3.
The insulating adhesive 7 discharged from the dispenser nozzle 6 is applied onto the bus bar 2 provided on the insulating film 3 and in front of the inner lead 1. Then, as shown in FIG. 4, an insulating adhesive 7 is applied to the remaining portion excluding the portion connected to the bus bar 2 to form a loop-shaped bonding wire for connecting the bonding pad 8 of the semiconductor chip and the inner lead 1. 5
However, the short circuit with the intermediate bus bar 2 is prevented.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、ディス
ペンサを使ってバスバーの上から絶縁性接着剤をバスバ
ーに塗布する上述した従来技術には次のような問題があ
る。However, the above-mentioned prior art in which the insulating adhesive is applied to the bus bar from above the bus bar using the dispenser has the following problems.
【０００７】ディスペンサノズルによって接着剤の吐出
量をコントロールできるけれども、接着剤の粘度、塗布
圧力、室温、リードフレームの表面状態によって、接着
剤７の塗布形状は大きく影響を受け、塗布の過不足を生
じる。接着剤７が不足の場合には、図５（Ａ）に示すよ
うに、ボンディングワイヤ５と接触したときバスバー２
に短絡する虞があり、接着剤７が過剰の場合には、図５
（Ｂ）に示すように、半導体チップ４のボンディングパ
ッド８を汚染し、ワイヤボンディング不良となる虞があ
る。Although the discharge amount of the adhesive can be controlled by the dispenser nozzle, the application shape of the adhesive 7 is greatly affected by the viscosity of the adhesive, the application pressure, the room temperature, and the surface condition of the lead frame. Occurs. When the adhesive 7 is insufficient, the bus bar 2 is contacted with the bonding wire 5 as shown in FIG. 5 (A).
If the adhesive 7 is excessive, there is a risk of short-circuiting
As shown in (B), the bonding pad 8 of the semiconductor chip 4 may be contaminated, resulting in defective wire bonding.
【０００８】なお、この問題はバスバーのみならず、リ
ードフレームの絶縁性を要求される他のリード部分に
も、またバスバーを有さないリードフレームにも共通す
る。This problem is common not only to the bus bar but also to other lead portions which are required to have insulation properties of the lead frame and to the lead frame having no bus bar.
【０００９】本発明の目的は、絶縁性接着剤を下面塗布
の状態で乾燥させることによって、リード部分の表面に
均一に且つ過不足なく絶縁層を形成することが可能なリ
ードフレームへの絶縁層形成方法を提供することにあ
る。An object of the present invention is to form an insulating layer on the surface of the lead portion uniformly and without excess or deficiency by drying the insulating adhesive in a state of being coated on the lower surface. It is to provide a forming method.
【００１０】また、本発明の目的は、バスバーに適用す
ることによって、絶縁信頼性の高い健全な絶縁機能を有
するリードフレームへの絶縁層形成方法を提供すること
にある。Another object of the present invention is to provide a method of forming an insulating layer on a lead frame having a reliable insulation function and a sound insulating function by applying to a bus bar.
【００１１】また、本発明の目的は、リード部分の表面
を包み込む様に塗布することによって、高信頼性を得る
ことが可能なリードフレームへの絶縁層形成方法を提供
することにある。It is another object of the present invention to provide a method for forming an insulating layer on a lead frame, which can achieve high reliability by coating the surface of the lead portion so as to wrap it.
【００１２】[0012]
【課題を解決するための手段】本発明のリードフレーム
への絶縁層形成方法は、リードフレームの絶縁性接着剤
を塗布すべきリードのリード面を下に向け、そのリード
面に絶縁性接着剤を塗布し、塗布後、そのリード面を下
に向けたまま乾燥してリードに絶縁層を形成するように
したものである。According to the method of forming an insulating layer on a lead frame of the present invention, the lead surface of a lead to which the insulating adhesive of the lead frame is to be applied faces downward, and the insulating adhesive is applied to the lead surface. Is applied and then dried with the lead surface facing downward to form an insulating layer on the lead.
【００１３】特に、リードフレームがデバイスホールま
で延長するインナーリードと、このインナーリードより
も更にデバイスホール側に配設されたバスバーとを有す
るリードフレームである場合に、絶縁層が形成されるリ
ードフレームのリードを、バスバーとすることができ
る。In particular, in the case where the lead frame is a lead frame having an inner lead extending to the device hole and a bus bar arranged further on the device hole side than the inner lead, an insulating layer is formed on the lead frame. The lead of can be a bus bar.
【００１４】なお、絶縁性接着剤の塗布方法には転写等
の印刷法を用いることもできるが、リード部分の上面を
包み込むように塗布するためには、ディップ方式とする
ことが好ましい。Although a printing method such as transfer can be used as the method of applying the insulating adhesive, a dipping method is preferable for applying so as to wrap the upper surface of the lead portion.
【００１５】[0015]
【作用】リードフレームの絶縁性接着剤を塗布すべきリ
ードのリード面を下向きにして、その表面にディップ方
式や印刷法により絶縁性接着剤を塗布する場合、下面塗
布であるために、絶縁性接着剤の粘度、塗布圧力、室
温、リードフレームの表面状態によって塗布形状は余り
影響を受けないが、必要とされる塗布厚に合わせた粘度
に設定することはできる。When the lead surface of the lead to which the insulating adhesive of the lead frame is to be applied is facing downward and the insulating adhesive is applied to the surface by the dipping method or the printing method, the lower surface is applied. The coating shape is not significantly affected by the viscosity of the adhesive, the coating pressure, the room temperature, and the surface condition of the lead frame, but the viscosity can be set according to the required coating thickness.
【００１６】また、下面塗布状態のまま乾燥させると、
過剰分は重力により落下するので、塗布面に接着剤が均
一に塗布される。したがって、塗布の過不足がなく、必
要とするリード面に均一な絶縁層を形成できる。If the coating is applied on the lower surface,
The excess drops due to gravity, so the adhesive is evenly applied to the application surface. Therefore, there is no excess or deficiency of coating, and a uniform insulating layer can be formed on the required lead surface.
【００１７】絶縁層が形成されるリードフレームのリー
ドが、バスバーである場合には、そのバスバー上に形成
される絶縁層が均一に塗布されて接着剤の不足箇所が生
じないので、これを跨ぐループ状のボンディングワイヤ
と短絡する虞がなくなる。また、接着剤の過剰分が半導
体チップのボンディングパッドに流れ込んでボンディン
グパッドを汚染してワイヤボンドを不良とするようなこ
ともなくなる。その結果、健全な絶縁機能が発揮され、
絶縁信頼性が大幅に向上する。When the lead of the lead frame on which the insulating layer is formed is a bus bar, the insulating layer formed on the bus bar is evenly applied and there is no shortage of the adhesive. There is no risk of short-circuiting with the loop-shaped bonding wire. Further, excess adhesive does not flow into the bonding pad of the semiconductor chip to contaminate the bonding pad and cause wire bond failure. As a result, a sound insulation function is demonstrated,
Insulation reliability is greatly improved.
【００１８】また、特に塗布方法にディップ方法を採用
すると、ボンディングワイヤ通過部のバスバー表面を包
み込む様に塗布することが簡単にできるので、高信頼性
を容易に得ることができる。Further, particularly when the dipping method is adopted as the coating method, the coating can be easily performed so as to wrap around the bus bar surface of the bonding wire passing portion, so that high reliability can be easily obtained.
【００１９】[0019]
【実施例】以下、本発明のリードフレームへの絶縁層形
成方法の実施例を図面を用いて説明する。図１は本実施
例による接着剤塗布方法のプロセスを示した図であっ
て、（Ａ）は接着剤ディップ前の状況を示した要部断面
図、（Ｂ）は接着剤ディップ状況を示した要部断面図、
（Ｃ）は乾燥状態を示す要部断面図である。Embodiments of the method for forming an insulating layer on a lead frame according to the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a process of an adhesive coating method according to this embodiment, (A) is a cross-sectional view of an essential part showing a state before an adhesive dip, and (B) shows an adhesive dip state. Cross section of the main part,
FIG. 3C is a cross-sectional view of a main part showing a dried state.
【００２０】バスバー２は、半導体チップのボンディン
グパッドとインナーリード１との間の隙間を埋める形で
細長く存在するリードであり、かつ、インナーリード１
に結線されるボンディングワイヤは、当該バスバー２を
跨ぐ形で半導体チップのボンディングパッドからループ
状に伸びてくる（図２参照）。このため、ボンディング
ワイヤ通過部のバスバー表面に絶縁層が必要とされる。The bus bar 2 is an elongated lead that fills a gap between the bonding pad of the semiconductor chip and the inner lead 1, and is also the inner lead 1.
The bonding wire connected to the wire extends from the bonding pad of the semiconductor chip in a loop shape across the bus bar 2 (see FIG. 2). Therefore, an insulating layer is required on the surface of the bus bar where the bonding wire passes.
【００２１】バスバー２の表面に絶縁性接着剤７を塗布
するために、先ず、予めバスバー２の絶縁性接着剤を塗
布すべき部分以外に塗布マスクを施して接着剤が塗布さ
れないようにしておく。しかる後に、図１（Ａ）に示す
ようにリードフレーム１１を、バスバー２のリード面を
下に向けて液溜め１３上の位置にもってくる。この場
合、リードフレーム１１の方を移動しても、液溜め９の
方を移動してもよい。接着剤１１は、例えば熱可塑性樹
脂であるポリイミド、ポリエーテルアミド、或いはポリ
エーテルアミドイミドからなり、樹脂は溶剤で溶かされ
ると共に加熱されて液状乃至ワニス状にされている。In order to apply the insulating adhesive 7 to the surface of the bus bar 2, first, a coating mask is applied to the portion of the bus bar 2 other than the portion to which the insulating adhesive is to be applied so that the adhesive is not applied. . Thereafter, as shown in FIG. 1A, the lead frame 11 is brought to a position on the liquid reservoir 13 with the lead surface of the bus bar 2 facing downward. In this case, the lead frame 11 may be moved or the liquid reservoir 9 may be moved. The adhesive 11 is made of, for example, a thermoplastic resin such as polyimide, polyether amide, or polyether amide imide, and the resin is dissolved in a solvent and heated to be in a liquid or varnish form.
【００２２】次いで、（Ｂ）に示すようにそのバスバー
２のリード面を下向きにして液溜め９内の絶縁性接着剤
７にディップする。このとき、接着剤７を塗布するリー
ド面を下向きにし、塗布するバスバー２を少なくともリ
ード面が接着剤７中に埋まるようにディップする。ま
た、液溜め９は水平に設置して接着剤７の液面を水平と
し、かつバスバー２も水平にしてディップすることが好
ましい。Next, as shown in (B), the lead surface of the bus bar 2 is faced downward and dipped in the insulating adhesive 7 in the liquid reservoir 9. At this time, the lead surface to which the adhesive 7 is applied is directed downward, and the bus bar 2 to be applied is dipped so that at least the lead surface is embedded in the adhesive 7. Further, it is preferable that the liquid reservoir 9 is installed horizontally so that the liquid surface of the adhesive 7 is horizontal, and the bus bar 2 is horizontal.
【００２３】そして、（Ｃ）に示すように、リードフレ
ームを液溜め９から引上げた後、そのままの向きで乾燥
ヒータ１０により塗布した絶縁性接着剤７を乾燥して絶
縁層を形成する。接着剤７中へのディップの深さが、バ
スバー２の板厚の１／１０〜１／２程度であれば、乾燥
後のリードのコーナ部は、ほぼ均一に絶縁被膜が形成さ
れる。また接着剤７の粘度を選択することによって被膜
厚さを最大１００μｍ程度まで厚くすることができる。Then, as shown in (C), after pulling up the lead frame from the liquid reservoir 9, the insulating adhesive 7 applied by the drying heater 10 in the same direction is dried to form an insulating layer. If the depth of the dip into the adhesive 7 is about 1/10 to 1/2 of the thickness of the bus bar 2, the insulating coating is formed almost uniformly on the corner portions of the leads after drying. Further, by selecting the viscosity of the adhesive 7, the film thickness can be increased up to about 100 μm at maximum.
【００２４】このようにリードフレーム１１のバスバー
２に、ディップ方式により接着剤７を下面塗布するよう
にしたので、バスバー２の所定リード面にディップによ
って所定厚の接着剤７が塗布できる。しかも下面塗布の
ままの状態で乾燥させるので、接着剤７が不要な部分に
塗布されるのが防止できる。また、接着剤の粘度、塗布
圧力、室温、リードフレームの表面状態によって接着剤
の塗布形状は影響を受けず、塗布の過不足が生じ難い。As described above, since the adhesive 7 is applied to the lower surface of the bus bar 2 of the lead frame 11 by the dip method, the adhesive 7 having the predetermined thickness can be applied to the predetermined lead surface of the bus bar 2 by the dip. Moreover, since the adhesive is applied to the lower surface as it is, the adhesive 7 can be prevented from being applied to unnecessary portions. In addition, the application shape of the adhesive is not affected by the viscosity of the adhesive, the application pressure, the room temperature, and the surface condition of the lead frame, and the application is less likely to be over or under.
【００２５】特に、接着剤７の塗布層は、粘度等をかえ
てやることにより、薄くすることも厚くすることもでき
る。また、バスバー２のリード面粗さを粗くしたり、或
いは溝を設けたりすることによっても接着剤７の厚塗り
が可能となる。In particular, the coating layer of the adhesive 7 can be made thin or thick by changing the viscosity and the like. Further, the adhesive 7 can be applied thickly by roughening the lead surface roughness of the bus bar 2 or by providing a groove.
【００２６】なお、上記実施例ではディップ方式により
塗布するようにしたが、パッドや塗布ロール等へ転写
（印刷）した接着剤を下面より塗布するようにしてもよ
く、これらによっても同様の塗布形状を得ることができ
る。In the above embodiment, the dip method is used for coating. However, an adhesive transferred (printed) to a pad, a coating roll or the like may be coated from the lower surface. Can be obtained.
【００２７】特に、パッドによる転写を使用する場合に
は、パッド形状をＬＯＣ用の絶縁フィルムと同一形状と
することで、絶縁フィルムを貼付けたのと同じ機能をも
たせることができる。換言すれば、ＬＯＣ用の絶縁フィ
ルムを本発明方法によって直接リードに形成することが
できる。そのため、高価な絶縁フィルムを使用する必要
がなくなるので、安価に半導体装置を製造することがで
きる。In particular, when the transfer using a pad is used, the same shape as that of the insulating film for LOC can be provided by making the shape of the pad the same as that of the insulating film for LOC. In other words, the insulating film for LOC can be directly formed on the lead by the method of the present invention. Therefore, it is not necessary to use an expensive insulating film, so that the semiconductor device can be manufactured at low cost.
【００２８】また、本発明方法を用いてバスバー２以外
のリード部、あるいはバスバーを有さないリードフレー
ムのリードにも絶縁層を施すことも可能である。その場
合、所定範囲乃至形状で塗布するためにリード部側に塗
布マスクパターンを形成しておいてもよい。It is also possible to apply an insulating layer to the lead portion other than the bus bar 2 or the lead of a lead frame having no bus bar by using the method of the present invention. In that case, an application mask pattern may be formed on the lead portion side in order to apply in a predetermined range or shape.
【００２９】[0029]
【発明の効果】（１）請求項１に記載の発明によれば、
下面塗布の状態で乾燥するためリードの厚み方向や必要
部以外への接着剤の回り込みも不足部分もなく、均一に
絶縁層を形成できる。(1) According to the invention described in claim 1,
Since the adhesive is dried in the state of being applied on the lower surface, the insulating layer can be uniformly formed without the adhesive wrapping around the lead in the thickness direction or other than the necessary portion and the lacking portion.
【００３０】（２）請求項２に記載の発明によれば、絶
縁層が形成されるリードをバスバーとしたので、バスバ
ーを跨ぐワイヤボンディングとの接触や、半導体チップ
への流れ込みによる汚染もなく、絶縁信頼性の高い健全
な絶縁機能を得ることができる。(2) According to the invention described in claim 2, since the lead on which the insulating layer is formed is the bus bar, there is no contact with wire bonding straddling the bus bar, and there is no contamination by flowing into the semiconductor chip. It is possible to obtain a sound insulation function with high insulation reliability.
【００３１】（３）請求項３に記載の発明によれば、塗
布方法がディップ方式であるため、リード部分の表面を
包み込む塗布が確実に行われ、信頼性をより高めること
ができる。(3) According to the third aspect of the present invention, since the coating method is the dip method, the coating covering the surface of the lead portion is surely performed, and the reliability can be further improved.
【図１】本発明によるリードフレームへの絶縁層形成方
法の実施例を示す工程図。FIG. 1 is a process drawing showing an embodiment of a method for forming an insulating layer on a lead frame according to the present invention.
【図２】ＬＯＣ構造の半導体装置を示す断面図。FIG. 2 is a cross-sectional view showing a semiconductor device having a LOC structure.
【図３】従来例のディスペンサによるバスバー絶縁層形
成方法を示す説明図。FIG. 3 is an explanatory view showing a method of forming a bus bar insulating layer by a conventional dispenser.
【図４】従来例のバスバー絶縁状況を示した説明図。FIG. 4 is an explanatory view showing a conventional insulation state of a bus bar.
【図５】従来例によるバスバー絶縁不足状況とバスバー
絶縁過剰状況とを示す説明図。FIG. 5 is an explanatory view showing a busbar insulation shortage situation and a busbar excess insulation situation according to a conventional example.
１ インナーリード ２ バスバー ３ 絶縁フィルム ７ 絶縁性接着剤 ８ 乾燥ヒータ ９ 液溜め １１ リードフレーム 1 Inner Lead 2 Bus Bar 3 Insulating Film 7 Insulating Adhesive 8 Drying Heater 9 Liquid Reservoir 11 Lead Frame
Claims (3)
きリードのリード面を下に向け、そのリード面に絶縁性
接着剤を塗布し、塗布後、リード面を下に向けたまま乾
燥してリードに絶縁層を形成することを特徴とするリー
ドフレームへの絶縁層形成方法。1. A lead frame, to which the insulating adhesive of the lead frame is to be applied, faces downward, the insulating adhesive is applied to the lead surface, and after application, the lead surface is dried with the lead surface facing downward. A method of forming an insulating layer on a lead frame, the method comprising forming an insulating layer on a lead.
延長するインナーリードと当該インナーリードよりも更
にデバイスホール側に配設されたバスバーとを有するリ
ードフレームであって、上記絶縁層が形成されるリード
フレームのリードが、上記バスバーである請求項１に記
載のリードフレームへの絶縁層形成方法。2. A lead frame, wherein the lead frame has an inner lead extending to a device hole, and a bus bar arranged further on the device hole side than the inner lead, wherein the insulating layer is formed. 2. The method for forming an insulating layer on a lead frame according to claim 1, wherein the lead is the bus bar.
る請求項１または２に記載のリードフレームへの絶縁層
形成方法。3. The method for forming an insulating layer on a lead frame according to claim 1, wherein the insulating adhesive is applied by a dip method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12585493A JP2962100B2 (en) | 1993-05-27 | 1993-05-27 | Method of forming insulating layer on lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12585493A JP2962100B2 (en) | 1993-05-27 | 1993-05-27 | Method of forming insulating layer on lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06334101A true JPH06334101A (en) | 1994-12-02 |
| JP2962100B2 JP2962100B2 (en) | 1999-10-12 |
Family
ID=14920589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12585493A Expired - Fee Related JP2962100B2 (en) | 1993-05-27 | 1993-05-27 | Method of forming insulating layer on lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2962100B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098486A (en) * | 1989-05-23 | 1992-03-24 | Hitachi Metals, Ltd. | Magnetically anisotropic hotworked magnet and method of producing same |
-
1993
- 1993-05-27 JP JP12585493A patent/JP2962100B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5098486A (en) * | 1989-05-23 | 1992-03-24 | Hitachi Metals, Ltd. | Magnetically anisotropic hotworked magnet and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2962100B2 (en) | 1999-10-12 |
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