JP2960563B2 - Composite metal laminate for semiconductor mounting board - Google Patents
Composite metal laminate for semiconductor mounting boardInfo
- Publication number
- JP2960563B2 JP2960563B2 JP5967791A JP5967791A JP2960563B2 JP 2960563 B2 JP2960563 B2 JP 2960563B2 JP 5967791 A JP5967791 A JP 5967791A JP 5967791 A JP5967791 A JP 5967791A JP 2960563 B2 JP2960563 B2 JP 2960563B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- composite metal
- invar alloy
- metal laminate
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】この発明は、各種の半導体デバイ
スを作成する際に半導体等を載置、接続するための半導
体取付け基板に係り、銅／インバー合金／銅クラッド材
の表面にアルミニウム層を設けた複合金属積層体とな
し、密着強度にすぐれた絶縁層の形成を容易にした半導
体取付け基板用複合金属積層体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor mounting board for mounting and connecting semiconductors and the like when manufacturing various semiconductor devices, and to provide an aluminum layer on the surface of copper / invar alloy / copper clad material. The present invention relates to a composite metal laminate for a semiconductor mounting substrate, which is provided with a composite metal laminate and facilitates formation of an insulating layer having excellent adhesion strength.
【０００２】[0002]
【従来の技術】各種の半導体デバイスを作成する際に半
導体等を載置、接続するための半導体取付けに用いられ
る金属基板材料として、現在最も幅広く使用されている
ものにアルミニウム材がある。アルミニウム基板材は、
１．密着強度の優れた絶縁層の形成が容易である。２．
熱伝導性にすぐれている。３．加工成形性がよい。４．
軽量であること。などの利点を有しているが、熱膨張が
大きいという欠点がある。2. Description of the Related Art An aluminum material is currently most widely used as a metal substrate material used for mounting a semiconductor for mounting and connecting a semiconductor or the like when manufacturing various semiconductor devices. Aluminum substrate material is
1. It is easy to form an insulating layer having excellent adhesion strength. 2.
Excellent thermal conductivity. 3. Good workability. 4.
Be lightweight. However, there is a disadvantage that thermal expansion is large.
【０００３】半導体パッケージ等との熱膨張係数との整
合性を有し、熱伝導率が大きいという相反する要求を満
足する材料として、クラッド板やＣｕ−ＭｏあるいはＣ
ｕ−Ｗ合金等の放熱基板用複合材料が提案されている。[0003] As a material having compatibility with the coefficient of thermal expansion of a semiconductor package or the like and satisfying the contradictory requirement of high thermal conductivity, a clad plate, Cu-Mo or C
A composite material for a heat dissipation substrate such as a u-W alloy has been proposed.
【０００４】クラッド板としては、銅板とインバー合金
板を積層した材料が使用されている。銅は熱伝導性が良
好であるが熱膨張係数が大きいため、これを抑制するた
めにインバー合金を積層圧接することにより、板の長手
方向の熱膨張に関して半導体素子との整合性を得るもの
である。また、銅板の両面にインバー合金板を積層圧接
したサンドイッチ構造を取ることにより、温度上昇によ
るそりを防ぐ構造となっている。As a clad plate, a material obtained by laminating a copper plate and an Invar alloy plate is used. Copper has good thermal conductivity, but has a large coefficient of thermal expansion.To suppress this, an Invar alloy is laminated and pressed to obtain consistency with the semiconductor element with respect to the thermal expansion in the longitudinal direction of the plate. is there. In addition, by adopting a sandwich structure in which an Invar alloy plate is stacked and pressed on both surfaces of a copper plate, a warp due to a temperature rise is prevented.
【０００５】[0005]
【発明が解決しようとする課題】また、半導体取付け基
板用材料として、銅／インバー合金／銅クラッド材（特
公平２−１４７９４号）やＡｌ／インバー合金／Ａｌク
ラッド材（特公昭６３−２６１８６３号）なども提案さ
れている。前者の銅／インバー合金／銅クラッド材の場
合、熱膨張が小さくかつ比較的熱伝導性もよいが、密着
強度の優れた絶縁層の形成が困難であり、後者のＡｌ／
インバー合金／Ａｌクラッド材の場合、熱膨張を小さく
するため前者の場合よりも大きな比率でインバー合金を
積層しなければ成らず、必然的に熱伝導性が悪化する。As a material for a semiconductor mounting substrate, copper / invar alloy / copper clad material (Japanese Patent Publication No. 2-14794) and Al / invar alloy / Al clad material (Japanese Patent Publication No. 63-261863). ) Has also been proposed. In the case of the former copper / invar alloy / copper clad material, the thermal expansion is small and the thermal conductivity is relatively good, but it is difficult to form an insulating layer having excellent adhesion strength, and the latter Al /
In the case of the Invar alloy / Al clad material, the Invar alloy must be laminated at a larger ratio than in the former case in order to reduce the thermal expansion, and the thermal conductivity inevitably deteriorates.
【０００６】この発明は、接着相手材の熱膨張係数との
整合性にすぐれ、かつ熱伝導性が良好で密着強度の優れ
た絶縁層の形成が容易な半導体取付け基板用材料の提供
を目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a material for a semiconductor mounting substrate which is excellent in compatibility with the coefficient of thermal expansion of an adhesion partner, has good thermal conductivity, and is easy to form an insulating layer having excellent adhesion strength. I have.
【０００７】[0007]
【課題を解決するための手段】この発明は、インバー合
金を芯材に両主面に銅材が積層されたクラッド材の少な
くとも一方主面にアルミニウム層が積層された積層体か
らなり、前記アルミニウム層の厚みが10μm以上でかつ
積層体全体に占める体積比率が20vol%以下であることを
特徴とする半導体取付け基板用複合金属積層体である。
この発明において、インバー合金は、30〜50wt%Niを含
有するNi-Fe系合金および25〜35wt%Niと4〜20wt%Coを含
有するNi-Co-Fe系合金などから、用途、目的に応じて適
宜選定される。According to the present invention, there is provided a clad material comprising an invar alloy as a core material and a copper material laminated on both principal surfaces and an aluminum layer laminated on at least one principal surface .
And the thickness of the aluminum layer is 10 μm or more, and
A composite metal laminate for a semiconductor mounting board, wherein a volume ratio of the composite metal laminate to the entire laminate is 20 vol% or less .
In the present invention, invar alloys include Ni-Fe-based alloys containing 30 to 50 wt% Ni and Ni-Co-Fe-based alloys containing 25 to 35 wt% Ni and 4 to 20 wt% Co for applications and purposes. It is appropriately selected according to the situation.
【０００８】[0008]
【作用】この発明による複合金属積層体は、従来の銅/
インバー合金/銅クラッド材の特徴を生かしつつ、密着
強度の優れた絶縁層を容易に形成するため、該クラッド
材の少なくとも一方主面に所定厚みからなるアルミニウ
ム層を積層したことを特徴とする。すなわち、この発明
による複合金属積層体は図1に示す如く、銅/インバー合
金/銅クラッド材1の両主面に各々所定厚みからなるアル
ミニウム層2を積層するか、図2に示す如く、銅/インバ
ー合金/銅クラッド材1の一方主面に所定厚みからなるア
ルミニウム層2を積層したものである。The composite metal laminate according to the present invention has a
In order to easily form an insulating layer having excellent adhesion strength while taking advantage of the characteristics of the Invar alloy / copper clad material, an aluminum layer having a predetermined thickness was laminated on at least one principal surface of the clad material. It is characterized by. I.e., composite metal laminate according to the present invention as shown in FIG. 1, stacking the Al <br/> Miniumu layer 2, each consisting of a predetermined thickness on the both main surfaces of a copper / Invar / copper clad material 1, 2 as shown in, in which the a <br/> aluminum layer 2 having a predetermined thickness on one main surface of a copper / Invar / copper clad material 1 are laminated.
【０００９】この発明による複合金属積層体の製造方法
は、先に圧延圧接にて得た銅／インバー合金／銅クラッ
ド材に、アルミニウム材を冷間圧接法、温間圧接法など
の圧着法で積層するほか、蒸着、スパッタリングなどの
気相成長法にて積層することができ、さらにアルミニウ
ム板、銅板、インバー合金板を所要の積層順序に重ねて
同時に圧延圧接して複合金属積層体となすことができ
る。The method for producing a composite metal laminate according to the present invention is characterized in that a copper / invar alloy / copper clad material previously obtained by rolling and pressure welding is coated with an aluminum material by a pressing method such as a cold pressure welding method or a warm pressure welding method. In addition to laminating, it can be laminated by vapor phase growth methods such as vapor deposition and sputtering, and furthermore, an aluminum plate, a copper plate, and an invar alloy plate are laminated in a required laminating order and simultaneously roll-welded to form a composite metal laminate. Can be.
【００１０】銅/インバー合金/銅クラッド材におけるイ
ンバー合金の体積比率は、その材質、用途、目的に応じ
て適宜選定されるが、熱膨張を小さくする目的から20vo
l%以上が望ましく、また、熱伝導性をあまり劣化させな
い目的から80vol%以下が望ましい。The volume ratio of the invar alloy in the copper / invar alloy / copper clad material is appropriately selected according to its material, use, and purpose.
l% or more is desirable , and 80 vol% or less is desirable for the purpose of not significantly deteriorating thermal conductivity.
【００１１】銅/インバー合金/銅クラッド材に積層する
アルミニウム層の積層体全体に占める体積比率は、銅/
インバー合金/銅クラッド材の熱膨張、熱伝導性等の特
性を損なうことがないように選定する必要があり、クラ
ッド材の両主面又は一方主面に積層する場合も、これら
アルミ層全体の体積比率を20vol%以下とすることが必要
である。また、アルミニウム層は絶縁層形成時のアルマ
イト処理を安定して実施するために、クラッド材の両主
面又は一方主面に積層する場合も各々主面において10μ
m以上の厚みが必要である。The volume ratio of the copper / invar alloy / aluminum layer laminated on the copper clad material to the entire laminate is copper / invar alloy / copper clad material.
Invar alloy / thermal expansion of the copper clad material, must be chosen so as not to impair the characteristics of the thermal conductivity and the like, class
When laminating on both main surfaces or one main surface of
The volume ratio of the entire aluminum layer must be 20 vol% or less
It is . Further, the aluminum layer in order to implement a stable manner anodized at the insulating layer formation, both main of the clad material
When laminating on the main surface or one main surface, 10μ on each main surface
A thickness of at least m is required.
【００１２】さらに、この発明による複合金属積層体に
おいて、アルミニウムと銅との界面は温度の上昇によ
り、脆い金属間化合物を生成するが、これを防止するた
めに前記のアルミニウムと銅との界面に薄いＮｉ層等の
バリヤー層を介在させるとよい。Further, in the composite metal laminate according to the present invention, a brittle intermetallic compound is formed at the interface between aluminum and copper due to an increase in temperature, and in order to prevent this, the interface between aluminum and copper is formed at the interface between aluminum and copper. It is preferable to interpose a barrier layer such as a thin Ni layer.
【００１３】[0013]
【実施例】実施例１ 板厚 ２．０ｍｍ、板幅２００ｍｍのコイル状の銅／イ
ンバー合金／銅クラッド材（インバー合金組成が３６％
Ｎｉ−０．２％Ｍｎ−Ｆｅ系で、厚さ比率２０：６０：
２０）を巻戻しながら、板厚 ０．１ｍｍ、板幅２００
ｍｍのコイル状のアルミニウム板（ＪＩＳＡ１０５０相
当材）を前記クラッド材の上方及び下方より巻戻しなが
ら、圧延率５４．５％で圧接し、その後、接合界面の金
属的接合力を高めるために、温度１５０℃、３時間の熱
処理を行い、続いて仕上げ冷間圧延を行い、板厚み０．
８ｍｍ、板幅２００ｍｍのコイル状のこの発明による複
合金属積層体を得た。すなわち、この発明によるアルミ
ニウム／銅／インバー合金／銅／アルミニウムの複合金
属積層体は、アルミニウム層厚みがそれぞれ０．０３０
ｍｍ、銅層が０．１４７ｍｍ、インバー合金層が０．４
４６ｍｍである。得られた複合金属積層体の面方向の平
均熱膨張係数（３０〜２００℃、×１０-6／℃）、面方
向の熱伝導率（Ｗ／ｍ・Ｋ）並びにアルマイト処理によ
る絶縁層の形成可否を表１に示す。Example 1 A coiled copper / invar alloy / copper clad material having a thickness of 2.0 mm and a width of 200 mm (invar alloy composition of 36%
Ni-0.2% Mn-Fe system, thickness ratio 20:60:
20) While unwinding, a sheet thickness of 0.1 mm and a sheet width of 200
mm coiled aluminum plate (JIS1050 equivalent material) is pressed at a rolling reduction of 54.5% while rewinding from above and below the cladding material, and then the temperature is increased to increase the metallic bonding strength at the bonding interface. Heat treatment at 150 ° C. for 3 hours was performed, followed by finish cold rolling to obtain a sheet thickness of 0.
A coil-shaped composite metal laminate according to the present invention having a thickness of 8 mm and a width of 200 mm was obtained. That is, the composite metal laminate of aluminum / copper / invar alloy / copper / aluminum according to the present invention has an aluminum layer thickness of 0.030 each.
mm, copper layer 0.147 mm, invar alloy layer 0.4
46 mm. Average thermal expansion coefficient (30-200 ° C., × 10 −6 / ° C.) in the plane direction of the obtained composite metal laminate, heat conductivity (W / m · K) in the plane direction, and formation of an insulating layer by alumite treatment Table 1 shows the availability.
【００１４】比較のため、上記インバー合金と銅及びア
ルミニウム板を用いて、銅層とインバー合金層比率がこ
の発明の積層体と同等の銅／インバー合金／銅クラッド
材（比較例１）と、アルミニウム／インバー合金／アル
ミニウムクラッド材（比較例２）を作成し、同様に特性
を調べて表１に示す。For comparison, a copper / invar alloy / copper clad material (Comparative Example 1) having the same copper layer / invar alloy layer ratio as the laminate of the present invention was prepared by using the above-mentioned invar alloy, copper and aluminum plates. An aluminum / invar alloy / aluminum clad material (Comparative Example 2) was prepared, and its characteristics were similarly examined.
【００１５】実施例２ 板厚 ２．０ｍｍ、板幅６０ｍｍのコイル状の銅／イン
バー合金／銅クラッド材（インバー合金組成が３６％Ｎ
ｉ−０．２％Ｍｎ−Ｆｅ系で、厚さ比率２０：６０：２
０）を巻戻しながら、板厚 ０．０５ｍｍ、板幅６０ｍ
ｍのコイル状のアルミニウム板（ＪＩＳＡ１０５０相当
材）を前記クラッド材の上方及び下方より巻戻しなが
ら、圧延率５１．２％で圧接し、続いて仕上げ冷間圧延
を行い、板厚み０．８ｍｍ、板幅２００ｍｍのコイル状
のこの発明による複合金属積層体を得た。すなわち、こ
の発明によるアルミニウム／銅／インバー合金／銅の複
合金属積層体は、アルミニウム層厚みが０．０１５ｍ
ｍ、銅層が０．１５７ｍｍ、インバー合金層が０．４７
１ｍｍであった。実施例１と同様に特性を調べて表１に
示す。Example 2 A coiled copper / invar alloy / copper clad material having a thickness of 2.0 mm and a width of 60 mm (invar alloy composition of 36% N
i-0.2% Mn-Fe system, thickness ratio 20: 60: 2
While unwinding 0), plate thickness 0.05 mm, plate width 60 m
m, a coil-shaped aluminum plate (a material equivalent to JIS A1050) was pressed from above and below the clad material at a rolling reduction of 51.2%, followed by finish cold rolling to obtain a sheet thickness of 0.8 mm. A coil-shaped composite metal laminate according to the present invention having a plate width of 200 mm was obtained. That is, the aluminum / copper / invar alloy / copper composite metal laminate according to the present invention has an aluminum layer thickness of 0.015 m.
m, copper layer 0.157 mm, invar alloy layer 0.47
1 mm. The characteristics were examined in the same manner as in Example 1 and shown in Table 1.
【００１６】実施例３ 板厚 ０．８ｍｍ、板幅１００ｍｍ、長さ１００ｍｍの
板状の銅／インバー合金／銅クラッド材（インバー合金
組成が３６％Ｎｉ−０．２％Ｍｎ−Ｆｅ系で、厚さ比率
２０：６０：２０）の一方主面に、真空度１０-7Ｔｏｒ
ｒ、基板温度２００〜２５０℃の条件でアルミニウム
（ＪＩＳＡ１０５０相当）を１５μｍ厚み蒸着し、板厚
０．８１５ｍｍ、板幅１００ｍｍ、長さ１００ｍｍの
板状のこの発明による複合金属積層体を得た。実施例１
と同様に特性を調べて表１に示す。Example 3 A plate-shaped copper / invar alloy / copper clad material having a thickness of 0.8 mm, a width of 100 mm and a length of 100 mm (invar alloy composition of 36% Ni-0.2% Mn-Fe, The thickness ratio of 20:60:20) has a vacuum degree of 10 −7 Torr on one main surface.
r, aluminum (equivalent to JIS A1050) was deposited in a thickness of 15 μm under the conditions of a substrate temperature of 200 to 250 ° C. to obtain a plate-shaped composite metal laminate according to the present invention having a thickness of 0.815 mm, a width of 100 mm and a length of 100 mm. Example 1
Table 1 shows the characteristics.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【発明の効果】この発明による複合金属積層体は、銅／
インバー合金／銅クラッド材の表面にアルミニウム層を
設けた複合金属積層体となし、銅／インバー合金／銅ク
ラッド材の特徴を生かしかつ密着強度にすぐれた絶縁層
の形成を容易にし、半導体取付け基板の用途に最適であ
る。The composite metal laminate according to the present invention has a
A composite metal laminate with an aluminum layer provided on the surface of an Invar alloy / copper clad material, making it easy to form an insulating layer with excellent adhesion strength utilizing the characteristics of copper / invar alloy / copper clad material, and a semiconductor mounting substrate Ideal for applications.
【図面の簡単な説明】[Brief description of the drawings]
【図１】この発明による複合金属積層体の構成を示す縦
断説明図である。FIG. 1 is a longitudinal sectional view showing a configuration of a composite metal laminate according to the present invention.
【図２】この発明による他の複合金属積層体の構成を示
す縦断説明図である。FIG. 2 is a longitudinal sectional view showing a configuration of another composite metal laminate according to the present invention.
１ 銅／インバー合金／銅クラッド材 ２ アルミニウム層 1 Copper / Invar alloy / Copper clad material 2 Aluminum layer
Claims (2)
層されたクラッド材の少なくとも一方主面にアルミニウ
ム層が積層された積層体からなり、前記アルミニウム層
の厚みが10μm以上でかつ積層体全体に占める体積比率
が20vol%であることを特徴とする半導体取付け基板用複
合金属積層体。1. A laminate comprising an invar alloy as a core material, a copper material laminated on both principal surfaces and an aluminum layer laminated on at least one principal surface of the clad material , wherein the aluminum layer is
Is 10μm or more in thickness and the volume ratio of the whole laminate
Is 20 vol%. 5. A composite metal laminate for a semiconductor mounting substrate, comprising:
材の体積比率が20〜80vol%であることを特徴とする請求
項1記載の半導体取付け基板用複合金属積層体。Wherein said body volume ratio of Invar alloy core material occupying the cladding material is 20 to 80 v ol% semiconductor mounting substrate composite metal laminate according to claim 1, wherein the a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5967791A JP2960563B2 (en) | 1991-02-28 | 1991-02-28 | Composite metal laminate for semiconductor mounting board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5967791A JP2960563B2 (en) | 1991-02-28 | 1991-02-28 | Composite metal laminate for semiconductor mounting board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04274383A JPH04274383A (en) | 1992-09-30 |
| JP2960563B2 true JP2960563B2 (en) | 1999-10-06 |
Family
ID=13120066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5967791A Expired - Lifetime JP2960563B2 (en) | 1991-02-28 | 1991-02-28 | Composite metal laminate for semiconductor mounting board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2960563B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0418736D0 (en) * | 2004-08-21 | 2004-09-22 | Univ Catholique Louvain | Machinable metallic composites |
| JP4965187B2 (en) * | 2006-08-09 | 2012-07-04 | 株式会社日立製作所 | Semiconductor device |
| KR20150074421A (en) * | 2013-12-24 | 2015-07-02 | 엘지이노텍 주식회사 | printed circuit board AND LUMINOUS DEVICE |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4288690A (en) * | 1979-10-29 | 1981-09-08 | Recognition Equipment Incorporated | Illumination system |
| JPS6081645A (en) * | 1983-10-12 | 1985-05-09 | Tokyo Electric Co Ltd | Optical reader |
| JPH01308527A (en) * | 1988-06-07 | 1989-12-13 | Sukara Kk | Light guide device for illumination in magnification imaging apparatus |
| JPH02207401A (en) * | 1989-02-04 | 1990-08-17 | Sukara Kk | Lighting system in enlarged image pickup device |
| JPH03135276A (en) * | 1989-10-20 | 1991-06-10 | Sukara Kk | Image pickup head for image pickup device |
-
1991
- 1991-02-28 JP JP5967791A patent/JP2960563B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04274383A (en) | 1992-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4611745A (en) | Method for preparing highly heat-conductive substrate and copper wiring sheet usable in the same | |
| TWI690041B (en) | Substrate for power module with heat sink and power module | |
| JP6775848B2 (en) | Heat dissipation plate material | |
| JP2960563B2 (en) | Composite metal laminate for semiconductor mounting board | |
| JP5400416B2 (en) | Superconducting wire | |
| CN111682002B (en) | Heat radiation plate | |
| JP4988243B2 (en) | Printed wiring board | |
| JPH0810202Y2 (en) | Lightweight substrates for semiconductor devices | |
| JP2689685B2 (en) | Lightweight substrates for semiconductor devices | |
| JP5854758B2 (en) | Electronic device mounting board | |
| WO2010055613A1 (en) | Polymer laminate substrate for formation of epitaxially grown film, and manufacturing method therefor | |
| JP2657610B2 (en) | Metal composite materials and electronic circuit components | |
| JP2717918B2 (en) | Metal composite parts | |
| JPH0780272B2 (en) | Thermal conductive composite material | |
| JP3850090B2 (en) | Composite materials for electronic parts | |
| JP2602161B2 (en) | High heat dissipation integrated circuit package | |
| JPS61119051A (en) | Semiconductor device | |
| JP2519402B2 (en) | Method for manufacturing power semiconductor module substrate | |
| JP3037485B2 (en) | Thermal conductive material and method of manufacturing the same | |
| JPH081644U (en) | Lightweight substrates for semiconductor devices | |
| US11945054B2 (en) | Method for producing a metal-ceramic substrate, solder system, and metal-ceramic substrate produced using such a method | |
| JP2020056049A (en) | Composite substrate for heat dissipation material, method for manufacturing the same, and heat dissipation unit | |
| JPH04274352A (en) | Clad material for heat sink | |
| JP2023105561A (en) | Electrode and thermoelectric conversion module | |
| JPS61260663A (en) | Clad material for lead frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20080730 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080730 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090730 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20090730 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100730 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20110730 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20110730 |