JP2926711B2 - Dry etching equipment - Google Patents
Dry etching equipmentInfo
- Publication number
- JP2926711B2 JP2926711B2 JP63117211A JP11721188A JP2926711B2 JP 2926711 B2 JP2926711 B2 JP 2926711B2 JP 63117211 A JP63117211 A JP 63117211A JP 11721188 A JP11721188 A JP 11721188A JP 2926711 B2 JP2926711 B2 JP 2926711B2
- Authority
- JP
- Japan
- Prior art keywords
- ring
- dry etching
- electrode
- etching apparatus
- inter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、平行平板電極を有するドライエッチング装
置に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus having parallel plate electrodes.
従来の技術 近年、半導体ウエハなどに代表されるパターン形成に
おいては、素子の高集積化、微細化に伴って高精度なエ
ッチングを行うために、平行平板電極によるドライエッ
チング装置が用いられている。2. Description of the Related Art In recent years, in pattern formation typified by a semiconductor wafer or the like, a dry etching apparatus using parallel plate electrodes has been used in order to perform high-precision etching with high integration and miniaturization of elements.
以下図面を参照しながら、従来のドライエッチング装
置の反応容器の構成の一例について説明する。Hereinafter, an example of a configuration of a reaction vessel of a conventional dry etching apparatus will be described with reference to the drawings.
第７図は、従来のドライエッチング装置の反応容器の
構成を示すものである。第７図において１は反応容器で
内部を真空に保っている。２は上部電極で下部電極３と
の電極間距離を可変にするため上下動可能にとりつけて
あり、反応容器１内において一対の平行平板電極を構成
し、下部電極３上にウエハ４を置き電極のいずれか一方
に13.56MHzの高周波電力を印加しドライエッチングする
ものである。FIG. 7 shows a configuration of a reaction vessel of a conventional dry etching apparatus. In FIG. 7, reference numeral 1 denotes a reaction vessel, the inside of which is kept at a vacuum. Reference numeral 2 denotes an upper electrode, which is vertically movably mounted to make the distance between the lower electrode 3 and the lower electrode 3 variable. A pair of parallel plate electrodes is formed in the reaction vessel 1, and a wafer 4 is placed on the lower electrode 3. 13.56 MHz high-frequency power is applied to one of them to perform dry etching.
発明が解決しようとする課題 しかしながら上記のような構成は、電極間距離の変更
は容易だが、電極間距離の寸法再現性が悪くエッチング
の再現性を悪化させる。また、上部電極可動部から発生
したダストがウエハ上に乗り微細パターンの欠陥を生じ
るという問題点を有していた。本発明は、上記問題点に
鑑みエッチングの再現性を改善し、ダストの発生を押え
たドライエッチング装置の反応容器を提供するものであ
る。Problems to be Solved by the Invention However, in the above configuration, although the distance between the electrodes can be easily changed, the dimensional reproducibility of the distance between the electrodes is poor and the reproducibility of the etching is deteriorated. In addition, there is a problem that dust generated from the upper electrode movable portion rides on the wafer and causes a defect of a fine pattern. The present invention has been made in view of the above problems, and provides a reaction vessel of a dry etching apparatus in which reproducibility of etching is improved and generation of dust is suppressed.
課題を解決するための手段 上記問題点を解決するために本発明は、一対の平行平
板電極からなるドライエッチング装置において、それぞ
れに電極を有した容器を各電極間の距離方向面に分割
し、前記分割部に所定の厚さのリングを設けたものであ
る。Means for Solving the Problems In order to solve the above problems, the present invention, in a dry etching apparatus consisting of a pair of parallel plate electrodes, divided containers having electrodes respectively in the distance direction plane between each electrode, A ring having a predetermined thickness is provided in the divided portion.
作用 本発明は上記した構成によって、特定の厚さを持つリ
ングを用いることによって電極間距離が一定となり、さ
らには上部電極を固定できることによって可動部からの
摩耗によるダストの発生を無くすことができた。Effect The present invention has the above-described configuration, and by using a ring having a specific thickness, the distance between the electrodes becomes constant, and furthermore, since the upper electrode can be fixed, generation of dust due to wear from the movable portion can be eliminated. .
実 施 例 以下本発明の一実施例について、図面を参照しながら
説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の第１の実施例の構成を示すものであ
り、特定の厚さを持つリング（電極間隔調整リング）を
１個または複数個重ねて反応容器間に挟みこむことで電
極間距離を一定とし、さらには上部電極を固定式とした
ものである。FIG. 1 shows the structure of a first embodiment of the present invention, in which one or more rings (electrode spacing adjusting rings) having a specific thickness are stacked and sandwiched between reaction vessels. The distance between them is fixed, and the upper electrode is fixed.
第１図において５は分割された反応容器の一方である
下部容器でステンレスまたは、アルミニウムで構成した
ものである、６は下部電極であり、ウエハ７を載置す
る。８はアルミナなどの絶縁体であり、下部電極６を下
部容器５から絶縁するものである。９は反応容器のもう
一方である上部容器で、10は上部電極であり、11はアル
ミナなどの絶縁体である。12は電極間調整リングで５、
10、15、20、30、40、50mmなどの所定の厚さを持ったも
ので、１個または複数個の重ね合わせにより電極間距離
を選択するもので、内周部に重ね合わせの位置決め部が
設けてある。13はＯリングであり真空シールとなってい
る。上記各部品は、各々Ｏリングにより真空シールさ
れ、反応室にはガス供給手段14と、真空排気口15と、電
極に接続した高周波電力の供給手段16とが接続されてい
る。In FIG. 1, reference numeral 5 denotes a lower vessel which is one of the divided reaction vessels, which is made of stainless steel or aluminum. Reference numeral 6 denotes a lower electrode on which a wafer 7 is placed. Reference numeral 8 denotes an insulator such as alumina, which insulates the lower electrode 6 from the lower container 5. 9 is an upper container which is the other of the reaction containers, 10 is an upper electrode, and 11 is an insulator such as alumina. 12 is an inter-electrode adjustment ring, 5
With a predetermined thickness of 10, 15, 20, 30, 40, 50 mm, etc., the distance between the electrodes is selected by one or more superpositions. Is provided. Reference numeral 13 denotes an O-ring, which is a vacuum seal. Each of the above components is vacuum-sealed by an O-ring, and a gas supply means 14, a vacuum exhaust port 15, and a high-frequency power supply means 16 connected to the electrodes are connected to the reaction chamber.
本発明は上記した構成により、所定の厚さを持つリン
グ12により電極間距離を決め以降は固定とするため、エ
ッチングパラメータの１つである電極間距離が固定さ
れ、エッチングの再現性を向上することができる。また
上部電極10を固定とすることで摩耗によるダストの発生
を無くすことができる。According to the present invention, since the distance between the electrodes is determined by the ring 12 having a predetermined thickness, the distance between the electrodes, which is one of the etching parameters, is fixed, thereby improving the reproducibility of the etching. be able to. Further, by fixing the upper electrode 10, generation of dust due to abrasion can be eliminated.
第２図は本発明の第２の実施例における電極間調整リ
ングの構成を示すものであり、反応容器内壁を加熱する
ことでドライエッチングによる反応生成物の再付着を防
止する。FIG. 2 shows a configuration of an inter-electrode adjusting ring according to a second embodiment of the present invention. By heating the inner wall of the reaction vessel, re-adhesion of reaction products due to dry etching is prevented.
第２図において17はヒータであり、18は電極間調整リ
ングであり、特定の厚さの電極間調整リング12と組み合
わせも可能であり、リングの内周部は真空容器内壁を覆
うよう構成したものである。ヒータ17は電極間調整リン
グ18内に複数本挿入してあり例えばアルミニウム膜のド
ライエッチングでは約100℃に温度調節している。アル
ミニウム膜を塩素系ガスによりドライエッチングすると
AlCl3の反応生成物が反応容器内に再付着するため、加
熱した電極間調整リング18により気化させることで反応
容器内を清浄な状態に保つことができ、エッチングの再
現性を確保できる。ここで加熱手段をヒータとしたが加
熱した液体を循環させてもよい。なお、第１の実施例と
共通の部分は共通符号を付して、その説明を省略する
（以下、第３の実施例〜第６の実施例についても同様で
ある。）。In FIG. 2, reference numeral 17 denotes a heater, reference numeral 18 denotes an inter-electrode adjustment ring, which can be combined with the inter-electrode adjustment ring 12 having a specific thickness, and the inner peripheral portion of the ring is configured to cover the inner wall of the vacuum vessel. Things. A plurality of heaters 17 are inserted into the inter-electrode adjustment ring 18, and the temperature is adjusted to about 100 ° C. in dry etching of an aluminum film, for example. Dry etching of aluminum film with chlorine-based gas
Since the reaction product of AlCl 3 adheres to the inside of the reaction vessel again, the inside of the reaction vessel can be kept in a clean state by being vaporized by the heated inter-electrode adjusting ring 18, and reproducibility of etching can be secured. Here, the heating means is a heater, but the heated liquid may be circulated. The parts common to the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted (the same applies to the third to sixth embodiments below).
第３図は本発明の第３の実施例における電極間調整リ
ングの構成を示すものであり、電極間調整リング内周部
に複数のガス吹出し穴を設けウエハ面上に均一にガスを
供給するものである。FIG. 3 shows a configuration of an inter-electrode adjusting ring according to a third embodiment of the present invention, in which a plurality of gas blowing holes are provided on an inner peripheral portion of the inter-electrode adjusting ring to uniformly supply a gas on a wafer surface. Things.
第３図において19は電極間調整リングであり内周部に
複数のエッチングガス吹出し穴20が設けてある。14はエ
ッチングガスの供給手段である。下部電極上のウエハ面
上に均一にエッチングガスを供給することで、ドライエ
ッチングの均一性が向上するものである。In FIG. 3, reference numeral 19 denotes an inter-electrode adjusting ring, in which a plurality of etching gas blowing holes 20 are provided in the inner peripheral portion. 14 is an etching gas supply means. By supplying the etching gas uniformly on the wafer surface on the lower electrode, the uniformity of dry etching is improved.
第４図は本発明の第４の実施例における電極間調整リ
ングの構成を示すものであり、一対の平行平板電極間に
第３の電極を設けることでエッチングパラメータの自由
度を増すものである。FIG. 4 shows a configuration of an inter-electrode adjusting ring according to a fourth embodiment of the present invention, in which a third electrode is provided between a pair of parallel plate electrodes to increase the degree of freedom of etching parameters. .
第４図において21は第３の電極としての作用をも営む
電極間調整リングであり上部電極10と、下部電極６間を
覆い中央部に複数の貫通穴22を設けたものである。23は
絶縁体で構成された電極間調整リングであり、24は電位
印加部で接地または直流電圧あるいは高周波電力を印加
しプラズマ状態を制御するものである。第３の電極を設
けることでエッチングパラメータの自由度を増すことが
でき、任意のエッチング状態を容易に得られる。In FIG. 4, reference numeral 21 denotes an inter-electrode adjustment ring which also functions as a third electrode, which covers the upper electrode 10 and the lower electrode 6 and has a plurality of through holes 22 in the center. Reference numeral 23 denotes an inter-electrode adjusting ring formed of an insulator, and reference numeral 24 denotes a potential application unit for applying a ground or a DC voltage or a high-frequency power to control a plasma state. By providing the third electrode, the degree of freedom of an etching parameter can be increased, and an arbitrary etching state can be easily obtained.
第５図は本発明の第５の実施例における電極間調整リ
ングの構成を示すものであり、電極間調整リングの内周
部に設けた複数のエッチングガスの排気穴より、反応容
器内のガスをウエハ上から均一に排気するものである。FIG. 5 shows a configuration of an inter-electrode adjusting ring according to a fifth embodiment of the present invention. The gas in the reaction vessel is discharged from a plurality of etching gas exhaust holes provided on the inner periphery of the inter-electrode adjusting ring. Is uniformly exhausted from above the wafer.
第５図において25は電極間調整リングであり内周部に
複数のエッチングガス排気口26がもうけてある。27は電
極間調整リング25に接続した真空排気手段であり、真空
ポンプや圧力コントローラーから成る。下部電極上のウ
エハ全周に対し均一にエッチングガスを排気でき、ドラ
イエッチングの均一性が向上する。In FIG. 5, reference numeral 25 denotes an inter-electrode adjusting ring, which has a plurality of etching gas exhaust ports 26 in the inner peripheral portion. Reference numeral 27 denotes an evacuation unit connected to the inter-electrode adjustment ring 25, which comprises a vacuum pump and a pressure controller. The etching gas can be uniformly exhausted over the entire periphery of the wafer on the lower electrode, and the uniformity of dry etching is improved.
第６図は本発明の第６の実施例における電極間調整リ
ングの構成を示すものであり、反応容器内壁を冷却する
ことでドライエッチングによる反応生成物や水蒸気を吸
着するものである。FIG. 6 shows a configuration of an inter-electrode adjusting ring according to a sixth embodiment of the present invention, which adsorbs a reaction product by dry etching and water vapor by cooling an inner wall of a reaction vessel.
第６図において28は電極間調整リングであり、リング
の内周部は反応容器内壁を覆うよう構成したものであ
る。29は冷却部で液体窒素などの冷却液を供給するもの
である。真空排気部にながれこむ反応生成物を反応容器
内壁部に吸付でき真空ポンプの劣化を防止できる。また
水蒸気などの吸着にも有効である。In FIG. 6, reference numeral 28 denotes an inter-electrode adjustment ring, the inner periphery of which is configured to cover the inner wall of the reaction vessel. Reference numeral 29 denotes a cooling unit for supplying a cooling liquid such as liquid nitrogen. The reaction product flowing into the evacuation unit can be sucked to the inner wall of the reaction vessel, and the deterioration of the vacuum pump can be prevented. It is also effective for adsorption of water vapor and the like.
発明の効果 以上のように本発明は真空反応容器において、それぞ
れに電極を有した容器を各電極間の距離方向に分割し、
前記分割部に所定の厚さのリングを設けることによっ
て、最適な電極間距離が選択でき、以降の電極間距離に
よるエッチングパラメータが固定され、エッチングの再
現性を向上することができる。また上部電極を固定する
ことで摩耗によるダストの発生源をなくし、ウエハ上へ
のダスト付着によるパターン不良を無くすことができ
る。Effects of the Invention As described above, the present invention divides a container having electrodes in a vacuum reaction container in a distance direction between the electrodes,
By providing a ring having a predetermined thickness in the divided portion, an optimum inter-electrode distance can be selected, an etching parameter based on a subsequent inter-electrode distance is fixed, and etching reproducibility can be improved. Further, by fixing the upper electrode, a source of dust due to abrasion can be eliminated, and a pattern defect due to dust adhering to the wafer can be eliminated.
第１図は本発明の第１の実施例の断面図、第２図は本発
明の第２の実施例の断面図、第３図は本発明の第３の実
施例の断面図、第４図は本発明の第４の実施例の断面
図、第５図は本発明の第５の実施例の断面図、第６図は
本発明の第６の実施例の断面図、第７図は従来例のドラ
イエッチング装置における反応容器の断面図である。 ５……下部反応容器、９……上部反応容器、12……電極
間調整リング、17……ヒータ、18……電極間調整リン
グ、19……電極間調整リング、20……ガス吹出し穴、2
1,23……電極間調整リング、24……電位印加部、25……
電極間調整リング、26……ガス排気口、28……電極間調
整リング、29……冷却部。1 is a sectional view of a first embodiment of the present invention, FIG. 2 is a sectional view of a second embodiment of the present invention, FIG. 3 is a sectional view of a third embodiment of the present invention, FIG. FIG. 5 is a sectional view of a fourth embodiment of the present invention, FIG. 5 is a sectional view of a fifth embodiment of the present invention, FIG. 6 is a sectional view of a sixth embodiment of the present invention, and FIG. It is sectional drawing of the reaction container in the conventional dry etching apparatus. 5 ... lower reaction vessel, 9 ... upper reaction vessel, 12 ... electrode adjustment ring, 17 ... heater, 18 ... electrode adjustment ring, 19 ... electrode adjustment ring, 20 ... gas blowing hole, Two
1,23 ... inter-electrode adjustment ring, 24 ... potential applying part, 25 ...
An inter-electrode adjustment ring, 26 gas exhaust port, 28 an inter-electrode adjustment ring, 29 cooling section.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−12735（ＪＰ，Ａ) 特開 昭63−93114（ＪＰ，Ａ) 特開 昭61−46029（ＪＰ，Ａ) 実開 昭62−40829（ＪＰ，Ｕ) 実開 昭62−107439（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) C23F 4/00 H01L 21/3065 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-60-12735 (JP, A) JP-A-63-93114 (JP, A) JP-A-61-46029 (JP, A) 40829 (JP, U) Japanese Utility Model 62-107439 (JP, U) (58) Fields investigated (Int. Cl. 6 , DB name) C23F 4/00 H01L 21/3065
Claims (6)
ング装置において、それぞれに電極を有した容器を各電
極間の距離方向に分割し、前記分割部に所定の厚さのリ
ングを設けたことを特徴とするドライエッチング装置。1. A dry etching apparatus comprising a pair of parallel plate electrodes, wherein a container having each electrode is divided in a distance direction between the electrodes, and a ring having a predetermined thickness is provided in the divided portion. Features a dry etching device.
構成し、前記リング内部に発熱手段を設けた請求項１記
載のドライエッチング装置。2. The dry etching apparatus according to claim 1, wherein an inner peripheral portion of the ring is configured to cover an inner wall of the reaction chamber, and a heating means is provided inside the ring.
つガス供給手段を設けた請求項１記載のドライエッチン
グ装置。3. The dry etching apparatus according to claim 1, wherein gas supply means having a plurality of gas blowing holes is provided on an inner peripheral portion of the ring.
ともに中央部に複数の貫通穴を設けさらに真空容器とリ
ング間に絶縁体を設け、リングに接地または電位を与え
るように構成した請求項１記載のドライエッチング装
置。4. An inner peripheral portion of the ring covers a space between electrodes facing each other, a plurality of through holes are provided in a central portion, an insulator is provided between the vacuum vessel and the ring, and a ground or a potential is applied to the ring. The dry etching apparatus according to claim 1.
排気手段を設けた請求項１記載のドライエッチング装
置。5. The dry etching apparatus according to claim 1, wherein exhaust means having a plurality of gas exhaust holes is provided on an inner peripheral portion of the ring.
うに構成し、リング内部に冷却手段を設けた請求項１記
載のドライエッチング装置。6. The dry etching apparatus according to claim 1, wherein an inner peripheral portion of the ring is configured to cover an inner wall of the reaction vessel, and cooling means is provided inside the ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117211A JP2926711B2 (en) | 1988-05-13 | 1988-05-13 | Dry etching equipment |
| KR1019890006274A KR930002675B1 (en) | 1988-05-13 | 1989-05-10 | Apparatus for dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117211A JP2926711B2 (en) | 1988-05-13 | 1988-05-13 | Dry etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01287285A JPH01287285A (en) | 1989-11-17 |
| JP2926711B2 true JP2926711B2 (en) | 1999-07-28 |
Family
ID=14706142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63117211A Expired - Lifetime JP2926711B2 (en) | 1988-05-13 | 1988-05-13 | Dry etching equipment |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2926711B2 (en) |
| KR (1) | KR930002675B1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7959984B2 (en) * | 2004-12-22 | 2011-06-14 | Lam Research Corporation | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
| JP5157199B2 (en) * | 2007-03-07 | 2013-03-06 | 東京エレクトロン株式会社 | Vacuum vessel, pressure vessel and sealing method thereof |
| JP5282008B2 (en) * | 2009-10-26 | 2013-09-04 | 株式会社日立ハイテクノロジーズ | Vacuum processing equipment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012735A (en) * | 1983-07-01 | 1985-01-23 | Hitachi Ltd | Etching device |
| JPS6146029A (en) * | 1984-08-10 | 1986-03-06 | Nec Corp | Plasma apparatus |
| JPH051072Y2 (en) * | 1985-08-29 | 1993-01-12 | ||
| JPH0528757Y2 (en) * | 1985-12-25 | 1993-07-23 | ||
| JPS6393114A (en) * | 1986-10-08 | 1988-04-23 | Tokuda Seisakusho Ltd | Dry etching device |
-
1988
- 1988-05-13 JP JP63117211A patent/JP2926711B2/en not_active Expired - Lifetime
-
1989
- 1989-05-10 KR KR1019890006274A patent/KR930002675B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR890017781A (en) | 1989-12-18 |
| KR930002675B1 (en) | 1993-04-07 |
| JPH01287285A (en) | 1989-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |