KR890017781A - Dry Etching Equipment - Google Patents

Dry Etching Equipment Download PDF

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Publication number
KR890017781A
KR890017781A KR1019890006274A KR890006274A KR890017781A KR 890017781 A KR890017781 A KR 890017781A KR 1019890006274 A KR1019890006274 A KR 1019890006274A KR 890006274 A KR890006274 A KR 890006274A KR 890017781 A KR890017781 A KR 890017781A
Authority
KR
South Korea
Prior art keywords
ring
dry etching
etching apparatus
reaction vessel
holes
Prior art date
Application number
KR1019890006274A
Other languages
Korean (ko)
Other versions
KR930002675B1 (en
Inventor
도시미찌 이시다
히로미 시마
히로시 오구라
Original Assignee
다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14706142&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR890017781(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 다니이 아끼오, 마쯔시다덴기산교 가부시기가이샤 filed Critical 다니이 아끼오
Publication of KR890017781A publication Critical patent/KR890017781A/en
Application granted granted Critical
Publication of KR930002675B1 publication Critical patent/KR930002675B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

내용 없음No content

Description

드라이에칭장치Dry Etching Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명의 제 1 의 실시예의 단면도, 제 2 도는 본 발명의 제 2 의 실시예의 단면도, 제 3 도는 본 발명의 제 3 의 실시예의 단면도.1 is a cross-sectional view of a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a second embodiment of the present invention, and FIG. 3 is a cross-sectional view of a third embodiment of the present invention.

Claims (6)

평행평판방식의 드라이에칭장치에 있어서, 반응용기를 분할하여 각각에 전극을 부착하고, 분할부에 특정한 두께를 가진 1개 또는 복수개의 링을 끼워넣는 것을 특징으로 하는 드라이에칭장치.A dry etching apparatus of a parallel plate type method, comprising: dividing a reaction vessel, attaching electrodes to each, and inserting one or a plurality of rings having a specific thickness into the division portion. 제 1 항에 있어서, 링의 내주부가 반응용기 내벽을 덮도록 구성하고, 상기 링 내부에 발열수단을 배설한 드라이에칭장치.The dry etching apparatus according to claim 1, wherein the inner circumferential portion of the ring covers the inner wall of the reaction vessel, and a heat generating means is disposed inside the ring. 제 1 항에 있어서, 링의 내주부에 복수의 가스분출구멍을 가진 가스공급수단을 배설한 드라이에칭장치.The dry etching apparatus according to claim 1, wherein gas supply means having a plurality of gas ejection holes is arranged in an inner circumference of the ring. 제 1 항에 있어서, 링내의 둘레부에서 대향하는 전극각을 덮은 동시에 중앙부에 복수의 관통구멍을 형성하고 또 진공용기와 링 사이에 절연체를 배설하고, 링에 접지 또는 전위를 부여하도록 구성한 드라이에칭장치.The dry etching according to claim 1, wherein a plurality of through-holes are formed in the center of the ring while covering the opposite electrode angles, and an insulator is disposed between the vacuum vessel and the ring, and the ground is applied to the ring. Device. 제 1 항에 있어서, 링의 내주부에 복수의 가스배기구멍을 가진 배기수단을 형성한 드라이에칭장치.The dry etching apparatus according to claim 1, wherein exhaust means having a plurality of gas exhaust holes is formed in an inner circumference of the ring. 제 1 항에 있어서, 링의 내주부가 반응용기의 내벽을 덮도록 구성하고, 링 내부에 냉각수단을 형성한 드라이에칭장치.The dry etching apparatus according to claim 1, wherein the inner circumferential portion of the ring covers the inner wall of the reaction vessel, and a cooling means is formed inside the ring. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890006274A 1988-05-13 1989-05-10 Apparatus for dry etching KR930002675B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-117211 1988-05-13
JP63117211A JP2926711B2 (en) 1988-05-13 1988-05-13 Dry etching equipment
JP88-117211 1988-05-13

Publications (2)

Publication Number Publication Date
KR890017781A true KR890017781A (en) 1989-12-18
KR930002675B1 KR930002675B1 (en) 1993-04-07

Family

ID=14706142

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890006274A KR930002675B1 (en) 1988-05-13 1989-05-10 Apparatus for dry etching

Country Status (2)

Country Link
JP (1) JP2926711B2 (en)
KR (1) KR930002675B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
JP5157199B2 (en) * 2007-03-07 2013-03-06 東京エレクトロン株式会社 Vacuum vessel, pressure vessel and sealing method thereof
JP5282008B2 (en) * 2009-10-26 2013-09-04 株式会社日立ハイテクノロジーズ Vacuum processing equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012735A (en) * 1983-07-01 1985-01-23 Hitachi Ltd Etching device
JPS6146029A (en) * 1984-08-10 1986-03-06 Nec Corp Plasma apparatus
JPH051072Y2 (en) * 1985-08-29 1993-01-12
JPH0528757Y2 (en) * 1985-12-25 1993-07-23
JPS6393114A (en) * 1986-10-08 1988-04-23 Tokuda Seisakusho Ltd Dry etching device

Also Published As

Publication number Publication date
JP2926711B2 (en) 1999-07-28
JPH01287285A (en) 1989-11-17
KR930002675B1 (en) 1993-04-07

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