JP2924141B2 - Plasma cleaning device for substrate in pre-process of wire bonding - Google Patents
Plasma cleaning device for substrate in pre-process of wire bondingInfo
- Publication number
- JP2924141B2 JP2924141B2 JP2244346A JP24434690A JP2924141B2 JP 2924141 B2 JP2924141 B2 JP 2924141B2 JP 2244346 A JP2244346 A JP 2244346A JP 24434690 A JP24434690 A JP 24434690A JP 2924141 B2 JP2924141 B2 JP 2924141B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mounting body
- vacuum vessel
- conveyor
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はワイヤボンディングの前工程における基板の
プラズマクリーニング装置に関し、詳しくは、基板に付
着する不純物をプラズマ手段により除去するための手段
に関する。Description: BACKGROUND OF THE INVENTION The present invention relates to a plasma cleaning apparatus for a substrate in a process prior to wire bonding, and more particularly, to a means for removing impurities adhering to a substrate by a plasma means.
（従来の技術） 半導体デバイスの製造工程において、基板に搭載され
た半導体の電極と、基板の電極とをワイヤで接続するこ
とが行われる。このようなワイヤボンディング工程にお
いて、基板の電極に不純物が付着していると、ワイヤを
電極にしっかりと接合させることはできない。この不純
物としては、作業者が基板を手で取り扱った場合に付着
する手脂、空気中に浮遊するガス化したオイル、レジス
トの残渣等がある。(Prior Art) In a process of manufacturing a semiconductor device, an electrode of a semiconductor mounted on a substrate and an electrode of the substrate are connected by a wire. In such a wire bonding step, if impurities are attached to the electrodes of the substrate, the wires cannot be firmly bonded to the electrodes. Examples of the impurities include hand grease adhered when an operator handles the substrate by hand, gasified oil floating in the air, and residue of a resist.
ワイヤボンディングに先立って、このような不純物を
除去するための手段として、従来、超音波洗浄が行われ
ていた。超音波洗浄は、基板を純水などのクリーニング
液中に浸漬し、このクリーニング液に超音波を印加し
て、物理的に不純物を除去する手段である。Prior to wire bonding, ultrasonic cleaning has been conventionally performed as a means for removing such impurities. Ultrasonic cleaning is a means of immersing a substrate in a cleaning liquid such as pure water and applying ultrasonic waves to the cleaning liquid to physically remove impurities.
（発明が解決しようとする課題） ところが超音波洗浄手段は、その後に熱風を吹き付け
るなどして基板を乾燥させねばならないため、手間と時
間を要し、また乾燥させると、クリーニング液がしみと
なって基板表面に残存しやすい等の問題があった。(Problems to be Solved by the Invention) However, since the ultrasonic cleaning means has to dry the substrate by blowing hot air thereafter, it takes time and effort, and when dried, the cleaning liquid is stained. Therefore, there is a problem that it easily remains on the substrate surface.
そこで本発明は、従来手段の問題を解消できる基板の
クリーニング手段を提供することを目的とする。Accordingly, it is an object of the present invention to provide a substrate cleaning unit that can solve the problems of the conventional unit.
（課題を解決するための手段） このために本発明は、プラズマ放電用ガスが供給され
る真空容器と、電圧を印加してこの真空容器にプラズマ
を発生させる電極部と、この真空容器の内部のガスを排
気する真空ポンプと、基板の載置体と、この載置体をこ
の真空容器に出し入れする出し入れ手段と、基板をこの
載置体の出し入れ方向と交差する方向に搬送するコンベ
ヤと、このコンベヤと真空容器から取り出された載置体
の間を往復動して、このコンベヤと載置体に基板を受け
渡しする受け渡し手段とから基板のプラズマクリーニン
グ装置を構成している。そして前記出し入れ手段の上下
動手段を設けるとともに、前記真空容器の内部に前記載
置体を載せる上下方向に複数段のガイド部を設け、かつ
前記ガイド部に載せられた前記載置体の下方にあって載
置体を下方から加熱するヒータおよびこのヒータの下方
にあってヒータの熱を上方へ反射するミラーを設けたも
のである。(Means for Solving the Problems) For this purpose, the present invention provides a vacuum vessel to which a plasma discharge gas is supplied, an electrode section for applying a voltage to generate plasma in the vacuum vessel, and an inside of the vacuum vessel. A vacuum pump for exhausting the gas, a mounting body for the substrate, a loading / unloading means for putting the loading body into and out of the vacuum container, and a conveyor for transporting the substrate in a direction intersecting the loading and unloading direction of the loading body, A plasma cleaning apparatus for the substrate is constituted by the conveyor and a transfer means for transferring the substrate to and from the conveyor taken out of the vacuum container and transferring the substrate to and from the conveyor. And while providing up-and-down movement means of the loading and unloading means, a plurality of guide portions are provided in the vertical direction for mounting the mounting body inside the vacuum vessel, and below the mounting body mounted on the guide portion. The heater is provided with a heater for heating the mounting body from below, and a mirror below the heater for reflecting the heat of the heater upward.
（作用） 上記構成において、コンベヤにより搬送されてきた基
板は、受け渡し手段により載置体に搭載され、真空容器
の内部に収納される。次いで電極部に高電圧を印加する
ことにより、真空容器の内部にはプラズマが発生し、電
子やイオンが高速運動することにより、基板表面に付着
する不純物を除去する。除去が終了すれば、載置体は真
空容器から取り出され、基板は載置体からコンベヤへ受
け渡されて、後のワイヤボンディング工程へ搬送され
る。(Operation) In the above configuration, the substrate conveyed by the conveyor is mounted on the mounting body by the transfer means and stored inside the vacuum vessel. Next, by applying a high voltage to the electrode portion, plasma is generated inside the vacuum vessel, and electrons and ions move at high speed, thereby removing impurities adhering to the substrate surface. When the removal is completed, the mounting body is taken out of the vacuum container, and the substrate is transferred from the mounting body to the conveyor, and is conveyed to a subsequent wire bonding step.
（実施例） 次に、図面を参照しながら本発明の実施例を説明す
る。Example Next, an example of the present invention will be described with reference to the drawings.
第１図はプラズマクリーニング装置の側面図、第２図
は平面図、第３図は正面図である。１は円筒形のガラス
製真空容器であり、その前端面には開口部２が開口され
ている。この真空容器１の周面には、アルミ板製の電極
部３が配設されている。４はこの電極部３に高周波交流
電圧を印加する電源である。1 is a side view of the plasma cleaning apparatus, FIG. 2 is a plan view, and FIG. 3 is a front view. Reference numeral 1 denotes a cylindrical glass vacuum container, and an opening 2 is opened at a front end surface thereof. An electrode portion 3 made of an aluminum plate is provided on a peripheral surface of the vacuum vessel 1. Reference numeral 4 denotes a power supply for applying a high-frequency AC voltage to the electrode unit 3.
真空容器１の上部にはパイプ５が接続されており、こ
のパイプ５から真空容器１内に、プラズマ放電用ガスと
して、Arガスのような不活性ガスが供給される。また真
空容器１の下部には、真空容器１内のガスを吸引排気す
るロータリー真空ポンプ６が連結されており、またその
後端面にはバルブ７が接続されている。９は真空ポンプ
６のバルブである。A pipe 5 is connected to an upper portion of the vacuum vessel 1, and an inert gas such as an Ar gas is supplied from the pipe 5 into the vacuum vessel 1 as a plasma discharge gas. Further, a rotary vacuum pump 6 for sucking and exhausting gas in the vacuum vessel 1 is connected to a lower portion of the vacuum vessel 1, and a valve 7 is connected to a rear end face thereof. 9 is a valve of the vacuum pump 6.
10は真空容器１に出し入れされるアルミ板から成る載
置体である。真空容器１の内部には、ガイド部11が上下
方向に複数段設けられており、載置体10はこのガイド部
11上にスライドして載せられる。このように載置体10を
複数段設けることにより、多数枚の載置体10上の基板Ｓ
を同時にクリーニングすることができる。Reference numeral 10 denotes a mounting body made of an aluminum plate which is put into and taken out of the vacuum vessel 1. Inside the vacuum vessel 1, a plurality of guides 11 are provided in the vertical direction.
Slide on 11 and put. By providing the mounting body 10 in a plurality of stages in this manner, the substrate S
Can be cleaned simultaneously.
第１図において、20は載置体10の出し入れ手段であ
り、以下、その詳細な構造を説明する。21はブラケット
であり、送りねじ22と、この送りねじ22を回転させるモ
ータM1が設けられている。23は送りねじ22に螺合するナ
ットであり、モータM1が駆動すると、ナット23は送りね
じ22に沿ってＹ方向に摺動する。24はナット23と一体の
支持板であり、この支持板24にはシリンダ25が保持され
ている。第２図に示すように、このシリンダ25のロッド
26には、レバー27が取り付けられており、このレバー27
にはピン28が突設されている。また上記載置体10の後端
部には金具29が固着されている。シリンダ25のロッド26
が突没すると、ピン28は金具29に係脱する。In FIG. 1, reference numeral 20 denotes a loading / unloading means of the mounting body 10, and its detailed structure will be described below. Reference numeral 21 denotes a bracket, which is provided with a feed screw 22 and a motor M1 for rotating the feed screw 22. Reference numeral 23 denotes a nut screwed to the feed screw 22. When the motor M1 is driven, the nut 23 slides along the feed screw 22 in the Y direction. Reference numeral 24 denotes a support plate integral with the nut 23, and the support plate 24 holds a cylinder 25. As shown in FIG. 2, the rod of this cylinder 25
26 has a lever 27 attached thereto.
Is provided with a pin 28. A metal fitting 29 is fixed to the rear end of the mounting body 10 described above. Rod 26 of cylinder 25
When the pin is retracted, the pin 28 is disengaged from the metal fitting 29.
第１図において、上記ブラケット21の下面は、垂直な
送りねじ31が結合されている。M2は送りねじ31の駆動用
モータである。送りねじ31には、ナット33が螺合してい
る。ナット33には、水平なフレーム34が結合されてお
り、このフレーム34の両側部には、ガイドシャフト35が
挿入されている。したがってモータM2が駆動すると、ブ
ラケット21は昇降する。すなわち、送りねじ31,ナット3
3,モータM2などは、出し入れ手段20を上下動させる上下
動手段となっている。このようにブラケット21が昇降す
ることにより、ピン28は多段に配設された何れかの載置
体10の金具29と同一レベルに高さ調整され、その状態で
シリンダ25のロッド26が突没することにより、ピン28は
金具29に係脱する。またピン28が金具29に係合した状態
で、モータM1が駆動することにより、載置体10はＹ方向
に摺動して、真空容器１に出し入れされる。In FIG. 1, a vertical feed screw 31 is connected to the lower surface of the bracket 21. M2 is a motor for driving the feed screw 31. A nut 33 is screwed into the feed screw 31. A horizontal frame 34 is connected to the nut 33, and a guide shaft 35 is inserted into both sides of the frame 34. Therefore, when the motor M2 is driven, the bracket 21 moves up and down. That is, feed screw 31, nut 3
3. The motor M2 and the like are vertical movement means for vertically moving the insertion / removal means 20. By raising and lowering the bracket 21 in this way, the height of the pin 28 is adjusted to the same level as the metal fittings 29 of any of the mounting bodies 10 arranged in multiple stages, and in this state, the rod 26 of the cylinder 25 projects and retracts. By doing so, the pin 28 is disengaged from the metal fitting 29. When the motor M1 is driven in a state where the pins 28 are engaged with the metal fittings 29, the mounting body 10 slides in the Y direction and is put in and out of the vacuum container 1.
第２図において、17,18は基板Ｓの搬送用コンベヤで
あり、真空容器１の前部に設けられている。このコンベ
ヤ17,18は、上記開口部２から取り出された載置体10を
挟んで配設されており、載置体10の出し入れ方向Ｙと交
差するＸ方向に基板Ｓを搬送する。19は基板Ｓのストッ
パーである。In FIG. 2, reference numerals 17 and 18 denote conveyors for transporting the substrates S, which are provided at the front of the vacuum vessel 1. The conveyors 17 and 18 are disposed with the mounting body 10 taken out from the opening 2 interposed therebetween, and transport the substrate S in the X direction that intersects the loading / unloading direction Y of the mounting body 10. 19 is a stopper for the substrate S.
第１図において、40は基板Ｓの受け渡し手段であっ
て、コンベヤ17と載置体10の間、及び載置体10とコンベ
ヤ18の間をＸ方向に往復動し、基板Ｓを吸着パッド41に
吸着して受け渡しする（第４図も参照）。基板Ｓはセラ
ミック，ガラス，ガラスエポキシ樹脂などにより形成さ
れており、またその表面には、銀パラジウム，金，銅な
どにより、電極部が形成されている。In FIG. 1, reference numeral 40 denotes a transfer means for the substrate S, which reciprocates in the X direction between the conveyor 17 and the mounting body 10 and between the mounting body 10 and the conveyor 18 to transfer the substrate S to the suction pad 41. (See also FIG. 4). The substrate S is formed of ceramic, glass, glass epoxy resin, or the like, and has an electrode portion formed on its surface by silver palladium, gold, copper, or the like.
第１図において、42は開口部２の蓋部材であり、シリ
ンダ43のロッド44に結合されている。したがってロッド
44が突没すると、開口部２は開閉される。In FIG. 1, reference numeral 42 denotes a lid member of the opening 2, which is connected to a rod 44 of a cylinder 43. Therefore the rod
The opening 2 is opened and closed when 44 is retracted.
第３図において、45は赤外線ランプなどのヒータ、46
はその下方に設けられたミラーである。ヒータ45とミラ
ー46は、載置体10の下方に配設されており、ヒータ45は
載置体10を下方から加熱し、またミラー46はヒータ45の
熱を上方へ反射する。また載置体10の下面には暗色塗料
を塗布するなどして、熱吸収手段47が施されている。ヒ
ータ45が駆動すると、載置体10の全面が加熱され、その
伝熱により基板Ｓも加熱される。このように基板Ｓを加
熱することにより、基板Ｓに付着する手脂、レジスト残
渣などの有機物の除去を促進できる。In FIG. 3, reference numeral 45 denotes a heater such as an infrared lamp;
Is a mirror provided below it. The heater 45 and the mirror 46 are disposed below the mounting body 10. The heater 45 heats the mounting body 10 from below, and the mirror 46 reflects the heat of the heater 45 upward. A heat absorbing means 47 is provided on the lower surface of the mounting body 10 by applying a dark paint or the like. When the heater 45 is driven, the entire surface of the mounting body 10 is heated, and the substrate S is also heated by the heat transfer. By heating the substrate S in this manner, removal of organic substances such as grease and residue remaining on the substrate S can be promoted.
上記構成のクリーング装置は、ワイヤボンディングの
前工程において基板をクリーニングするものであり、次
に動作の説明を行う。The cleaning apparatus having the above-described configuration cleans a substrate in a process before wire bonding, and the operation will be described next.
コンベヤ17により搬送されてきた基板Ｓは、ストッパ
ー19に当って停止する。そこで受け渡し手段40はこの基
板Ｓを吸着してテイクアップし、真空容器１から取り出
された最上段の載置体10に移載する。このとき載置体10
は、モータM1が駆動することにより、真空容器１へ向っ
てピッチ送りされており、このピッチ送りに同期して、
受け渡し手段40がコンベヤ17と載置体10の間を往復して
基板Ｓを載置体10に移載することにより、基板Ｓは載置
体10に１枚づつ順に整列して搭載される。The substrate S conveyed by the conveyor 17 hits the stopper 19 and stops. Then, the transfer means 40 sucks and takes up the substrate S and transfers it to the uppermost mounting body 10 taken out of the vacuum vessel 1. At this time, the mounting body 10
Is pitch-fed toward the vacuum vessel 1 by driving the motor M1, and synchronized with this pitch-feed,
The transfer means 40 reciprocates between the conveyor 17 and the mounting body 10 to transfer the substrate S to the mounting body 10, whereby the substrates S are mounted on the mounting body 10 one by one in order.
このようにして多数枚の基板Ｓが搭載されると、載置
体10は真空容器１内に完全に進入する。次いで、ピン28
は最上段の載置体10の金具29から離脱し、次いでモータ
M2が駆動することにより、ブラケット21は下降し、ピン
28は中段の載置体10の金具29に対向する。次いでシリン
ダ25が作動することにより、ピン28はこの金具29に係合
し、次いでモータM1が逆回転することにより、載置体10
は真空容器１から取り出される。以下同様にして、この
載置体10と、下段の載置体10にも基板Ｓが搭載され、す
べての載置体10が真空容器１に収納されると、シリンダ
43が作動して、蓋部材42により開口部２は密閉される。When a large number of substrates S are mounted in this way, the mounting body 10 completely enters the vacuum vessel 1. Then pin 28
Is detached from the metal fitting 29 of the uppermost mounting body 10, and then the motor
When M2 is driven, the bracket 21 is lowered and the pin
28 faces the metal fitting 29 of the mounting body 10 in the middle stage. Next, when the cylinder 25 is operated, the pin 28 is engaged with the metal fitting 29, and then the motor M1 is rotated in the reverse direction, so that the mounting body 10 is rotated.
Is taken out of the vacuum vessel 1. Similarly, the substrate S is also mounted on the mounting body 10 and the lower mounting body 10, and when all the mounting bodies 10 are housed in the vacuum container 1, the cylinder
The opening 43 is closed by the cover member 42 by the operation of 43.
次いで真空ポンプ６が作動し、真空容器１内は減圧さ
れるとともに、真空容器１内にArガスが供給され、次い
で電極部３に高周波交流電圧が印加されることにより、
プラズマが発生する。この時、Arガスの一部はイオン化
し、イオン化したAr＋，マイナス電子は真空容器１内を
激しく高速運動し、基板Ｓの表面に衝突して電極部に付
着する不純物を除去し、除去された不純物は真空ポンプ
６に吸引される。Next, the vacuum pump 6 is operated, the pressure inside the vacuum vessel 1 is reduced, and an Ar gas is supplied into the vacuum vessel 1, and then a high-frequency AC voltage is applied to the electrode section 3,
Plasma is generated. At this time, a part of the Ar gas is ionized, and the ionized Ar + and minus electrons move violently at high speed in the vacuum vessel 1 and collide with the surface of the substrate S to remove impurities adhered to the electrode portion, and are removed. The impurities are sucked by the vacuum pump 6.
このようにして不純物を除去したならば、真空ポンプ
６のバルブ９を閉じるとともに、バルブ７を開いて真空
容器１内を常圧にもどす。次いで先程と逆方向の動作に
より、各載置体10をピッチ送りして真空容器１から取り
出す。このとき、このピッチ送りに同期して、受け渡し
手段40は載置体10とコンベヤ18の間を往復動し、載置体
10上の基板Ｓを１枚づつコンベヤ18に受け渡し、次のワ
イヤボンディング工程へ搬送する。After the impurities have been removed in this manner, the valve 9 of the vacuum pump 6 is closed and the valve 7 is opened to return the inside of the vacuum vessel 1 to normal pressure. Next, the mounting bodies 10 are pitch-fed and taken out of the vacuum vessel 1 by the operation in the direction opposite to the above. At this time, the delivery means 40 reciprocates between the mounting body 10 and the conveyor 18 in synchronization with the pitch feed, and the mounting body
The substrates S on the substrate 10 are transferred one by one to the conveyor 18 and transported to the next wire bonding step.
以上のように本手段は、複数段の載置体10に基板Ｓを
積載し、多数枚の基板Ｓを作業性よくプラズマクリーニ
ングすることができる。As described above, according to the present means, the substrates S can be stacked on the plurality of stages of the mounting bodies 10, and a large number of substrates S can be plasma-cleaned with good workability.
（発明の効果） 以上説明したように本発明によれば、基板を載置する
載置体を真空容器の内部に自動的に多段に収納して、こ
れらの載置体上の多数枚の基板を一括してプラズマクリ
ーニングすることができる。しかも載置体の下方にあっ
て載置体を下方から加熱するヒータおよびこのヒータの
下方にあってヒータの熱を上方へ反射するミラーを設け
たことにより、各載置体および各載置体上の各基板を熱
効率よく迅速に加熱し、多数枚の基板の電極部に付着す
る不純物を一括して効率よくきれいに除去することがで
きる。(Effects of the Invention) As described above, according to the present invention, a plurality of substrates on which a substrate is placed are automatically accommodated in a vacuum vessel, and a large number of substrates are placed on these substrates. Can be collectively plasma-cleaned. Further, by providing a heater below the mounting body for heating the mounting body from below and a mirror below the heater and reflecting the heat of the heater upward, each mounting body and each mounting body are provided. Each of the above substrates can be heated quickly and efficiently, and impurities adhering to the electrode portions of a large number of substrates can be collectively and efficiently removed.
図は本発明の実施例を示すものであって、第１図はプラ
ズマクリーニング装置の側面図、第２図は平面図、第３
図は正面図、第４図は移載中の側面図である。 １……真空容器 ３……電極部 ６……真空ポンプ 10……載置体 11……ガイド部 17,18……コンベヤ 20……出し入れ手段 31,33,M2……上下動手段 40……受け渡し手段 45……ヒータ 46……ミラー Ｓ……基板1 shows an embodiment of the present invention. FIG. 1 is a side view of a plasma cleaning apparatus, FIG. 2 is a plan view, FIG.
The figure is a front view, and FIG. 4 is a side view during transfer. DESCRIPTION OF SYMBOLS 1 ... Vacuum container 3 ... Electrode part 6 ... Vacuum pump 10 ... Mounting body 11 ... Guide part 17, 18 ... Conveyor 20 ... Outing / in means 31,33, M2 ... Vertical movement means 40 ... Delivery means 45 Heater 46 Mirror S Substrate
Claims (1)
と、電圧を印加してこの真空容器の内部にプラズマを発
生させる電極部と、この真空容器の内部のガスを排気す
る真空ポンプと、基板の載置体と、この載置体をこの真
空容器に出し入れする出し入れ手段と、基板をこの載置
体の出し入れ方向と交差する方向に搬送するコンベヤ
と、このコンベヤと真空容器から取り出された載置体の
間を往復動して、このコンベヤと載置体に基板を受け渡
しする受け渡し手段とを備えた基板のプラズマクリーニ
ング装置であって、前記出し入れ手段の上下動手段を設
けるとともに、前記真空容器の内部に前記載置体を載せ
る上下方向に複数段のガイド部を設け、かつ前記ガイド
部に載せられた前記載置体の下方にあって載置体を下方
から加熱するヒータおよびこのヒータの下方にあってヒ
ータの熱を上方へ反射するミラーを設けたことを特徴と
するワイヤボンディングの前工程における基板のプラズ
マクリーニング装置。A vacuum vessel to which a plasma discharge gas is supplied, an electrode section for applying a voltage to generate plasma inside the vacuum vessel, and a vacuum pump for exhausting a gas inside the vacuum vessel; A substrate mounting body, a loading / unloading means for putting the loading body into and out of the vacuum container, a conveyor for transporting the substrate in a direction intersecting the loading and unloading direction of the mounting body, and a substrate taken out of the conveyor and the vacuum container. What is claimed is: 1. A plasma cleaning apparatus for a substrate, comprising: a conveyor for reciprocatingly moving between mounting bodies, and a transfer means for transferring a substrate to and from the mounting body. A heater for providing a plurality of guides in a vertical direction for mounting the mounting body inside the container and heating the mounting body from below the mounting body below the mounting body mounted on the guide portion And plasma cleaning device for the substrate before the step of wire bonding, wherein a heat of the heater disposed below the heater is provided a mirror for reflecting upward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2244346A JP2924141B2 (en) | 1990-09-14 | 1990-09-14 | Plasma cleaning device for substrate in pre-process of wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2244346A JP2924141B2 (en) | 1990-09-14 | 1990-09-14 | Plasma cleaning device for substrate in pre-process of wire bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04123430A JPH04123430A (en) | 1992-04-23 |
| JP2924141B2 true JP2924141B2 (en) | 1999-07-26 |
Family
ID=17117337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2244346A Expired - Fee Related JP2924141B2 (en) | 1990-09-14 | 1990-09-14 | Plasma cleaning device for substrate in pre-process of wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2924141B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101547917B1 (en) * | 2014-02-06 | 2015-08-27 | (주) 주원테크 | Multi function apparatus for semiconductor package process |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5676856A (en) * | 1994-04-25 | 1997-10-14 | Matsushita Electric Industrial Co., Ltd. | Electric discharge apparatus for cleaning electrode on workpiece and method thereof |
| US6245189B1 (en) | 1994-12-05 | 2001-06-12 | Nordson Corporation | High Throughput plasma treatment system |
| JP3736001B2 (en) * | 1996-02-29 | 2006-01-18 | 株式会社デンソー | Electronic component mounting method |
| US6176667B1 (en) * | 1996-04-30 | 2001-01-23 | Applied Materials, Inc. | Multideck wafer processing system |
| US5772773A (en) * | 1996-05-20 | 1998-06-30 | Applied Materials, Inc. | Co-axial motorized wafer lift |
| JPH1050751A (en) * | 1996-07-30 | 1998-02-20 | Kyocera Corp | Method for bonding thin bonding wire |
| JPH11288991A (en) * | 1998-04-03 | 1999-10-19 | Shinko Electric Co Ltd | Load port |
| US6120229A (en) * | 1999-02-01 | 2000-09-19 | Brooks Automation Inc. | Substrate carrier as batchloader |
| US6972071B1 (en) | 1999-07-13 | 2005-12-06 | Nordson Corporation | High-speed symmetrical plasma treatment system |
| US6709522B1 (en) | 2000-07-11 | 2004-03-23 | Nordson Corporation | Material handling system and methods for a multichamber plasma treatment system |
| US6841033B2 (en) | 2001-03-21 | 2005-01-11 | Nordson Corporation | Material handling system and method for a multi-workpiece plasma treatment system |
| JP2004071611A (en) * | 2002-08-01 | 2004-03-04 | Matsushita Electric Ind Co Ltd | Device and method of mounting electronic part |
| CN104616955B (en) * | 2013-11-04 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment |
-
1990
- 1990-09-14 JP JP2244346A patent/JP2924141B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101547917B1 (en) * | 2014-02-06 | 2015-08-27 | (주) 주원테크 | Multi function apparatus for semiconductor package process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04123430A (en) | 1992-04-23 |
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