JPH04123430A - Plasma cleaning equipment for substrate in pretreatment of wire bonding - Google Patents

Plasma cleaning equipment for substrate in pretreatment of wire bonding

Info

Publication number
JPH04123430A
JPH04123430A JP2244346A JP24434690A JPH04123430A JP H04123430 A JPH04123430 A JP H04123430A JP 2244346 A JP2244346 A JP 2244346A JP 24434690 A JP24434690 A JP 24434690A JP H04123430 A JPH04123430 A JP H04123430A
Authority
JP
Japan
Prior art keywords
vacuum container
substrate
mounting body
mount
conveyer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2244346A
Other languages
Japanese (ja)
Other versions
JP2924141B2 (en
Inventor
Isamu Morisako
勇 森迫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2244346A priority Critical patent/JP2924141B2/en
Publication of JPH04123430A publication Critical patent/JPH04123430A/en
Application granted granted Critical
Publication of JP2924141B2 publication Critical patent/JP2924141B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To remove impurities deposited on electrodes with high workability and high cleanness by constituting the title equipment of an in/out means which draws a mount out of and into a vacuum container, a conveyer which transports substrates in a direction crossing the mount in/out directions, and a transfer means which reciprocates between this conveyer and the mount drawn out of the vacuum container and transfers substrates to this conveyer and the mount. CONSTITUTION:A transfer means 40 reciprocates between a conveyer 17 and a mount 20 and transfers substrates S one by one to array and load them on the mount 10. When all mounts 10 are placed into a vacuum container 1, the opening 2 is closed by a lid member 42. Next, a vacuum pump 6 is actuated to depressurize the interior of the vacuum container 1, and Ar gas supplied into the vacuum container 1. Then, with high-frequency AC voltage impressed on an electrode 3, plasma develops to remove impurities deposited on the electrode, and the removed impurities are sucked by the vacuum pump 6. For drawing each mount 10 out of the vacuum container 1, a transfer means 40 reciprocates in synchronism with pitch feed between the mount 10 and a conveyer 18 and transfers substrates S one by one to the conveyer 18.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明はワイヤボンディングの前工程における基板のプ
ラズマクリーニング装置に関し、詳しくは、基板に付着
する不純物をプラズマ手段により除去するための手段に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a plasma cleaning apparatus for a substrate in a pre-process of wire bonding, and more particularly to a means for removing impurities adhering to a substrate by plasma means.

（従来の技術） 半導体デバイスの製造工程において、基板に搭載された
半導体の電極と、基板の電極とをワイヤで接続すること
が行われる。このようなワイヤボンディング工程におい
て、基板の電極に不純物が付着していると、ワイヤを電
極にしっかりと接合させることはできない。この不純物
としては、作業者が基板を手で取り扱った場合に付着す
る手脂、空気中に浮遊するガス化したオイル、レジスト
の残渣等がある。(Prior Art) In the manufacturing process of a semiconductor device, an electrode of a semiconductor mounted on a substrate and an electrode of the substrate are connected with a wire. In such a wire bonding process, if impurities adhere to the electrodes of the substrate, the wires cannot be firmly bonded to the electrodes. These impurities include hand oils that adhere when a worker handles the substrate with his/her hands, gasified oil floating in the air, resist residue, and the like.

ワイヤボンディングに先立って、このような不純物を除
去するための手段として、従来、超音波洗浄が行われて
いた。超音波洗浄は、基板を純水などのクリーニング液
中に浸漬し、このクリーニング液に超音波を印加して、
物理的に不純物を除去する手段である。Conventionally, ultrasonic cleaning has been performed as a means to remove such impurities prior to wire bonding. Ultrasonic cleaning involves immersing the substrate in a cleaning liquid such as pure water and applying ultrasonic waves to this cleaning liquid.
It is a means of physically removing impurities.

（発明が解決しようとする課Ｂ） ところが超音波洗浄手段は、その後に熱風を吹き付ける
などして基板を乾燥させねばならないため、手間と時間
を要し、また乾燥させると、クリーニング液がじみとな
って基板表面に残存しやすい等の問題があった。(Problem B to be solved by the invention) However, the ultrasonic cleaning means requires time and effort to dry the substrate by blowing hot air afterward, and when it is dried, the cleaning liquid oozes out. This poses a problem, such as that it tends to remain on the surface of the substrate.

そこで本発明は、従来手段の問題を解消できる基板のク
リーニング手段を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate cleaning means that can solve the problems of the conventional means.

（課題を解決するための手段） このために本発明は、プラズマ放電用ガスが供給される
真空容器と、この真空容器に電圧を印加してプラズマを
発生させる電極部と、この真空容器の内部のガスを排気
する真空ポンプと、基板の載置体と、この載置体をこの
真空容器に出し入れする出し入れ手段と、基板をこの載
置体の出し入れ方向と交差する方向に搬送するコンベヤ
と、このコンベヤと真空容器から取り出された載置体の
間を往復動゛して、このコンベヤと載置体に基板を受け
渡しする受け渡し手段とから基板のプラズマクリーニン
グ装置を構成している。(Means for Solving the Problems) To this end, the present invention provides a vacuum vessel to which plasma discharge gas is supplied, an electrode section for applying voltage to the vacuum vessel to generate plasma, and an interior of the vacuum vessel. a vacuum pump for evacuating the gas; a substrate mounting body; a loading/unloading means for loading and unloading the mounting body into and out of the vacuum container; a conveyor for transporting the substrate in a direction intersecting the direction in which the mounting body is taken in and taken out; A substrate plasma cleaning apparatus is constituted by a transfer means that reciprocates between the conveyor and the mounting body taken out from the vacuum container and delivers the substrate to the conveyor and the mounting body.

（作用） 上記構成において、コンベヤにより搬送されてきた基板
は、受け渡し手段により載置体に搭載され、真空容器の
内部に収納される。次いで電極部に高電圧を印加するこ
とにより、真空容器の内部にはプラズマが発生し、電子
やイオンが高速運動することにより、基板表面に付着す
る不純物を除去する。除去が終了すれば、載置体は真空
容器から取り出され、基板は載置体からコンベヤへ受け
渡されて、後のワイヤボンディング工程へ搬送される。(Function) In the above configuration, the substrate transported by the conveyor is mounted on the mounting body by the delivery means and stored inside the vacuum container. Next, by applying a high voltage to the electrode section, plasma is generated inside the vacuum container, and electrons and ions move at high speed, thereby removing impurities adhering to the substrate surface. When the removal is completed, the mounting body is taken out from the vacuum container, and the substrate is transferred from the mounting body to a conveyor and transported to the subsequent wire bonding process.

（実施例） 次に、図面を参照しながら本発明の詳細な説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.

第１図はプラズマクリーニング装置の側面図、第２図は
平面図、第３図は正面図である。１は円筒形のガラス製
真空容器であり、その前端面には開口部２が開口されて
いる。この真空容器１の周面には、アルミ板製の電極部
３が配設されている。４はこの電極部３に高周波交流電
圧を印加する電源である。FIG. 1 is a side view of the plasma cleaning apparatus, FIG. 2 is a plan view, and FIG. 3 is a front view. Reference numeral 1 denotes a cylindrical glass vacuum container, and an opening 2 is opened in the front end surface of the container. An electrode section 3 made of an aluminum plate is arranged on the circumferential surface of the vacuum container 1. Reference numeral 4 denotes a power source that applies a high frequency AC voltage to this electrode section 3.

真空容器ｌの上部にはパイプ５が接続されており、この
パイプ５から真空容器ｌ内に、プラズマ放電用ガスとし
て、Ａｒガスのような不活性ガスが供給される。また真
空容器１の下部には、真空容器１内のガスを吸引排気す
るロータリー真空ポンプ６が連結されており、またその
後端面にはバルブ７が接続されている。９は真空ポンプ
６のバルブである。A pipe 5 is connected to the upper part of the vacuum container 1, and an inert gas such as Ar gas is supplied from the pipe 5 into the vacuum container 1 as a plasma discharge gas. Further, a rotary vacuum pump 6 is connected to the lower part of the vacuum container 1 for sucking and exhausting gas in the vacuum container 1, and a valve 7 is connected to the rear end surface. 9 is a valve of the vacuum pump 6.

１０は真空容器ｌに出し入れされるアルミ板から成る載
置体である。真空容器１の内部には、ガイド部１１が複
数段設けられており、載置体１０はこのガイド部１１上
をスライドする。このように載置体１０を複数段設ける
ことにより、多数枚の載置体１０上の基板Ｓを同時にク
リーニングすることができる。Reference numeral 10 denotes a mounting body made of an aluminum plate that is taken in and out of the vacuum container l. A plurality of guide sections 11 are provided inside the vacuum container 1, and the mounting body 10 slides on the guide sections 11. By providing a plurality of stages of mounting bodies 10 in this manner, it is possible to simultaneously clean a large number of substrates S on a large number of mounting bodies 10.

第１図において、２０は載置体１０の出し入れ手段であ
り、以下、その詳細な構造を説明する。２１はブラケッ
トであり、送りねじ２２と、この送りねじ２２を回転さ
せるモータＭ１が設けられている。２３は送りねじ２２
に螺合するナンドであり、モータＭ１が駆動すると、ナ
ツト２３は送りねじ２２に沿ってＹ方向に摺動する。２
４はナツト２３と一体の支持板であり、この支持板２４
にはシリンダ２５が保持されている。第２図に示すよう
に、このシリンダ２５のロンド２６には、レバー２７が
取り付けられており、このレバー２７にはビン２８が突
設されている。また上記載置体１０の後端部には金具２
９が固着されている。シリンダ２５０ロツド２６が突没
すると、ビン２８は金具２９に係脱する。In FIG. 1, 20 is a means for taking in and taking out the mounting body 10, and the detailed structure thereof will be explained below. A bracket 21 is provided with a feed screw 22 and a motor M1 for rotating the feed screw 22. 23 is the feed screw 22
When the motor M1 is driven, the nut 23 slides along the feed screw 22 in the Y direction. 2
4 is a support plate integrated with the nut 23, and this support plate 24
A cylinder 25 is held therein. As shown in FIG. 2, a lever 27 is attached to the rond 26 of the cylinder 25, and a pin 28 is protruded from the lever 27. In addition, a metal fitting 2 is provided at the rear end of the above-mentioned mounting body 10.
9 is fixed. When the cylinder 250 rod 26 protrudes and retracts, the bottle 28 engages and disengages from the metal fitting 29.

第１図において、上記ブラケット２１の下面は、垂直な
送りねじ３１が結合されている。Ｍ２は送りねじ３１の
駆動用モータである。送りねじ３１には、ナツト３３が
螺合している。ナツト３３には、水平なフレーム３４が
結合されており、このフレーム３４の両側部には、ガイ
ドシャフト３５が挿入されている。したがってモータＭ
２が駆動すると、ブラケット２１は昇降する。このよう
にブラケット２１が昇降することにより、ビン２８は多
段に配設された何れかの載置体１０の金具２９と同一レ
ベルに高さ調整され、その状態でシリンダ２５のロッド
２６が突没することにより、ピン２８は金具２９に係脱
する。またピン２８が金具２９に係合した状態で、モー
タＭ１が駆動することにより、載置体１０はＹ方向に摺
動して、真空容器１に出し入れされる。In FIG. 1, a vertical feed screw 31 is coupled to the lower surface of the bracket 21. As shown in FIG. M2 is a motor for driving the feed screw 31. A nut 33 is screwed into the feed screw 31. A horizontal frame 34 is coupled to the nut 33, and guide shafts 35 are inserted into both sides of the frame 34. Therefore motor M
2 is driven, the bracket 21 moves up and down. As the bracket 21 moves up and down in this way, the height of the bin 28 is adjusted to be at the same level as the metal fittings 29 of any of the mounting bodies 10 arranged in multiple stages, and in this state, the rod 26 of the cylinder 25 protrudes and retracts. By doing so, the pin 28 is engaged with and disengaged from the metal fitting 29. Furthermore, when the motor M1 is driven with the pin 28 engaged with the metal fitting 29, the mounting body 10 slides in the Y direction and is taken in and out of the vacuum container 1.

第２図において、１７．１８は基板Ｓの搬送用コンベヤ
であり、真空容器１の前部に設けられている。このコン
ベヤ１７．１８は、上記開口部２から取り出された載置
体ｌＯを挟んで配設されており、載置体１０の出し入れ
方向Ｙと交差するＸ方向に基板Ｓを搬送する。１９は基
板Ｓのストッパーである。In FIG. 2, 17 and 18 are conveyors for transporting substrates S, which are provided at the front of the vacuum container 1. The conveyors 17 and 18 are disposed to sandwich the mounting body 1O taken out from the opening 2, and transport the substrate S in the X direction intersecting the loading/unloading direction Y of the mounting body 10. 19 is a stopper for the substrate S.

第１図において、４０は基板Ｓの受け渡し手段であって
、コンベヤ１７と載置体１０の間、及び載置体１０とコ
ンベヤ１８の間をＸ方向に往復動し、基板Ｓを吸着パッ
ド４１に吸着して受け渡しする（第４図も参照）。基板
Ｓはセラミック、ガラス、ガラスエポキシ樹脂などによ
り形成されており、またその表面には、銀パラジウム、
金、ｆｌなどにより、電極部が形成されている。In FIG. 1, reference numeral 40 denotes a transfer means for the substrate S, which reciprocates in the X direction between the conveyor 17 and the mounting body 10 and between the mounting body 10 and the conveyor 18, and transfers the substrate S to the suction pad 41. (See also Figure 4). The substrate S is made of ceramic, glass, glass epoxy resin, etc., and its surface is coated with silver palladium,
The electrode portion is made of gold, fl, or the like.

第１図において、４２は開口部２の蓋部材であり、シリ
ンダ４３のロッド４４に結合されている。したがってロ
ッド４４が突没すると、開口部２は開閉される。In FIG. 1, 42 is a cover member of the opening 2, which is connected to a rod 44 of a cylinder 43. As shown in FIG. Therefore, when the rod 44 protrudes and retracts, the opening 2 is opened and closed.

第３図において、４５は赤外線ランプなどのヒータ、４
６はその下方に設けられたミラーである。ヒータ４５と
ミラー４６は、載置体１０の下方に配設されており、載
置体１０を下方から加熱する。また載置体１０の下面に
は暗色塗料を塗布するなどして、熱吸収手段４７が施さ
れている。ヒータ４５が駆動すると、載置体１０の全面
が加熱され、その伝熱により基板Ｓも加熱される。この
ように基板Ｓを加熱することにより、基板Ｓに付着する
手脂、レジスト残渣などの有機物の除去を促進できる。In FIG. 3, 45 is a heater such as an infrared lamp;
6 is a mirror provided below. The heater 45 and the mirror 46 are arranged below the mounting body 10 and heat the mounting body 10 from below. Further, a heat absorbing means 47 is provided on the lower surface of the mounting body 10 by applying dark paint or the like. When the heater 45 is driven, the entire surface of the mounting body 10 is heated, and the substrate S is also heated by the heat transfer. By heating the substrate S in this manner, removal of organic substances such as hand oil and resist residues adhering to the substrate S can be promoted.

上記構成のクリーニグ装置は、ワイヤボンディングの前
工程において基板をクリーニングするものであり、次に
動作の説明を行う。The cleaning device configured as described above cleans the substrate in a pre-process of wire bonding, and its operation will be explained next.

コンベヤ１７により搬送されてきた基板Ｓは、スト・７
パー１９に当って停止する。そこで受け渡し手段４０は
この基板Ｓを吸着してティクアップし、真空容器１から
取り出された最上段の載置体１０に移載する。このとき
載置体１０は、モータＭ１が駆動することにより、真空
容器ｌへ向ってピンチ送りされており、このピンチ送り
に同期して、受け渡し手段４０がコンベヤ１７と載置体
１０の間を往復して基板Ｓを載置体ｌＯに移載すること
により、基板Ｓは載置体１０に１枚づつ順に整列して搭
載される。The substrate S transported by the conveyor 17 is
He hit par 19 and stopped. Thereupon, the transfer means 40 adsorbs and ticks up the substrate S, and transfers it to the uppermost mounting body 10 taken out from the vacuum container 1. At this time, the mounting body 10 is pinch-fed toward the vacuum container l by driving the motor M1, and in synchronization with this pinch-feeding, the transfer means 40 moves between the conveyor 17 and the mounting body 10. By reciprocating and transferring the substrates S to the mounting body 10, the substrates S are sequentially aligned and mounted on the mounting body 10 one by one.

このようにして多数枚の基板Ｓが搭載されると、載置体
１０は真空容器１内に完全に進入する。次いで、ピン２
８は最１段の載置体１０の金具２９から離脱し、次いで
モータＭ２が駆動することにより、ブラケット２１は下
降し、ビン２８は中段の載置体１０の金具２９に対向す
る。次いでシリンダ２５が作動することにより、ビン２
８はこの金具２９に係合し、次いでモータＭ１が逆回転
することにより、載置体１０は真空容器ｌから取り出さ
れる。以下同様にして、この載置体ｌＯと、下段の載置
体ｌＯにも基板Ｓが搭載され、すべての載置体１０が真
空容器ｌに収納されると、シリンダ４３が作動して、蓋
部材４２により開口部２は密閉される。When a large number of substrates S are mounted in this manner, the mounting body 10 completely enters the vacuum container 1. Then pin 2
8 is detached from the metal fitting 29 of the first stage mounting body 10, and then the bracket 21 is lowered by driving the motor M2, and the bin 28 is opposed to the metal fitting 29 of the middle stage mounting body 10. Next, by operating the cylinder 25, the bottle 2
8 engages with this metal fitting 29, and then the motor M1 rotates in the reverse direction, whereby the mounting body 10 is taken out from the vacuum container l. Similarly, substrates S are mounted on this mounting body lO and the lower mounting body lO, and when all the mounting bodies 10 are housed in the vacuum container l, the cylinder 43 is operated and the lid is closed. The opening 2 is sealed by the member 42.

次いで真空ポンプ６が作動し、真空容器１内は減圧され
るとともに、真空容器１内にＡｒガスが供給され、次い
で電極部３に高周波交流電圧が印加されることにより、
プラズマが発生する。この時、Ａｒガスの一部はイオン
化し、イオン化したＡｒ＋、マイナス電子は真空容器１
内を激しく高速運動し、基板Ｓの表面に衝突して電極部
に付着する不純物を除去し、除去された不純物は真空ポ
ンプ６に吸引される。Next, the vacuum pump 6 is activated, the pressure inside the vacuum container 1 is reduced, Ar gas is supplied into the vacuum container 1, and then a high frequency alternating current voltage is applied to the electrode section 3.
Plasma is generated. At this time, a part of the Ar gas is ionized, and the ionized Ar+ and negative electrons are transferred to the vacuum chamber 1.
The impurities that collide with the surface of the substrate S and adhere to the electrode portion are removed, and the removed impurities are sucked into the vacuum pump 6.

このようにして不純物を除去したならば、真空ポンプ６
のバルブ９を閉しるとともに、バルブ７を開いて真空容
器ｌ内を常圧にもどす。次いで先程と逆方向の動作によ
り、各載置体１０をピッチ送りして真空容器１から取り
出す。このとき、このピッチ送りに同期して、受け渡し
手段４０は載置体ｌＯとコンベヤ１８の間を往復動し、
載置体重０上の基板Ｓを１枚づつコンベヤエ８に受け渡
し、次のワイヤボンディング工程へ搬送する。After removing impurities in this way, the vacuum pump 6
At the same time, valve 9 is closed and valve 7 is opened to return the inside of the vacuum container l to normal pressure. Next, each mounting body 10 is pitch-fed and taken out from the vacuum container 1 by an operation in the opposite direction to the previous one. At this time, in synchronization with this pitch feeding, the delivery means 40 reciprocates between the mounting body lO and the conveyor 18,
The substrates S with a loading weight of 0 are transferred one by one to the conveyor 8 and transported to the next wire bonding process.

以上のように本手段は、複数段の載置体１０に基板Ｓを
積載し、多数枚の基板Ｓを作業性よくプラズマクリーニ
ングすることができる。As described above, the present means can load the substrates S on a plurality of stages of mounting bodies 10 and perform plasma cleaning on a large number of substrates S with good workability.

（発明の効果） 以上説明したように本発明は、プラズマ放電用ガスが供
給される真空容器と、この真空容器に電圧を印加してプ
ラズマを発生させる電極部と、この真空容器の内部のガ
スを排気する真空ポンプと、基板の載置体と、この載置
体をこの真空容器に出し入れする出し入れ手段と、基板
をこの載置体の出し入れ方向と交差する方向に搬送する
コンベヤと、このコンベヤと真空容器から取り出された
載置体の間を往復動して、このコンベヤと載置体に基板
を受け渡しする受け渡し手段とからプラズマクリーニン
グ装置を構成しているので、ワイヤボンディング工程に
先立って、基板の電極部に付着する不純物を作業性よく
、かつきれいに除去することができる。(Effects of the Invention) As explained above, the present invention includes a vacuum container to which a plasma discharge gas is supplied, an electrode part that applies voltage to the vacuum container to generate plasma, and a gas inside the vacuum container. a vacuum pump that evacuates the substrate, a mounting body for the substrate, a loading/unloading means for loading and unloading the mounting body into and out of the vacuum container, a conveyor for transporting the substrate in a direction intersecting the direction in which the mounting body is taken in and out, and Since the plasma cleaning apparatus is composed of a transfer means that reciprocates between the conveyor and the mounting body taken out from the vacuum container and delivers the substrate to the conveyor and the mounting body, prior to the wire bonding process, Impurities adhering to the electrode portion of the substrate can be removed cleanly and with good workability.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の実施例を示すものであって、第１図はプラ
ズマクリーニング装置の側面図、第２図は平面図、第３
図は正面図、第４図は移載中の側面図である。 ■・・・真空容器 ３・・・電極部 ６・・・真空ポンプ １０・・・載置体 １７．１８・・・コンベヤ ２０・・・出し入れ手段 ４０・・・受け渡し手段 Ｓ・・・基板 ・基板The figures show an embodiment of the present invention, in which Fig. 1 is a side view of a plasma cleaning device, Fig. 2 is a plan view, and Fig. 3 is a side view of a plasma cleaning device.
The figure is a front view, and FIG. 4 is a side view during transfer. ■...Vacuum container 3...Electrode unit 6...Vacuum pump 10...Placement body 17.18...Conveyor 20...Input/output means 40...Delivery means S...Substrate... substrate

Claims (1)

【特許請求の範囲】[Claims] プラズマ放電用ガスが供給される真空容器と、この真空
容器に電圧を印加してプラズマを発生させる電極部と、
この真空容器の内部のガスを排気する真空ポンプと、基
板の載置体と、この載置体をこの真空容器に出し入れす
る出し入れ手段と、基板をこの載置体の出し入れ方向と
交差する方向に搬送するコンベヤと、このコンベヤと真
空容器から取り出された載置体の間を往復動して、この
コンベヤと載置体に基板を受け渡しする受け渡し手段と
を備えていることを特徴とするワイヤボンディングの前
工程における基板のプラズマクリーニング装置。a vacuum vessel to which a plasma discharge gas is supplied; an electrode unit that applies voltage to the vacuum vessel to generate plasma;
A vacuum pump that exhausts gas inside the vacuum container, a mounting body for the substrate, a loading/unloading means for loading and unloading the mounting body into and out of the vacuum container, and a loading/unloading means for moving the substrate in and out of the mounting body. A wire bonding device comprising: a conveyor for conveying; and a transfer means that reciprocates between the conveyor and a mounting body taken out from a vacuum container to deliver the substrate to the conveyor and the mounting body. Plasma cleaning equipment for substrates in the pre-process.
JP2244346A 1990-09-14 1990-09-14 Plasma cleaning device for substrate in pre-process of wire bonding Expired - Fee Related JP2924141B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2244346A JP2924141B2 (en) 1990-09-14 1990-09-14 Plasma cleaning device for substrate in pre-process of wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2244346A JP2924141B2 (en) 1990-09-14 1990-09-14 Plasma cleaning device for substrate in pre-process of wire bonding

Publications (2)

Publication Number Publication Date
JPH04123430A true JPH04123430A (en) 1992-04-23
JP2924141B2 JP2924141B2 (en) 1999-07-26

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ID=17117337

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP2924141B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5676856A (en) * 1994-04-25 1997-10-14 Matsushita Electric Industrial Co., Ltd. Electric discharge apparatus for cleaning electrode on workpiece and method thereof
JPH09293744A (en) * 1996-02-29 1997-11-11 Denso Corp Mounting method of electronic part
JPH1050751A (en) * 1996-07-30 1998-02-20 Kyocera Corp Method for bonding thin bonding wire
US5772773A (en) * 1996-05-20 1998-06-30 Applied Materials, Inc. Co-axial motorized wafer lift
US6120229A (en) * 1999-02-01 2000-09-19 Brooks Automation Inc. Substrate carrier as batchloader
US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US6186723B1 (en) * 1998-04-03 2001-02-13 Shinko Electric Co., Ltd. Load port
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6808592B1 (en) 1994-12-05 2004-10-26 Nordson Corporation High throughput plasma treatment system
US6841033B2 (en) 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
CN100341125C (en) * 2002-08-01 2007-10-03 松下电器产业株式会社 Eqipment and method for mounting electronic part
CN104616955A (en) * 2013-11-04 2015-05-13 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing equipment

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Publication number Priority date Publication date Assignee Title
KR101547917B1 (en) * 2014-02-06 2015-08-27 (주) 주원테크 Multi function apparatus for semiconductor package process

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5676856A (en) * 1994-04-25 1997-10-14 Matsushita Electric Industrial Co., Ltd. Electric discharge apparatus for cleaning electrode on workpiece and method thereof
US6808592B1 (en) 1994-12-05 2004-10-26 Nordson Corporation High throughput plasma treatment system
US7201823B2 (en) 1994-12-05 2007-04-10 Nordson Corporation High throughput plasma treatment system
JPH09293744A (en) * 1996-02-29 1997-11-11 Denso Corp Mounting method of electronic part
US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US5772773A (en) * 1996-05-20 1998-06-30 Applied Materials, Inc. Co-axial motorized wafer lift
JPH1050751A (en) * 1996-07-30 1998-02-20 Kyocera Corp Method for bonding thin bonding wire
US6186723B1 (en) * 1998-04-03 2001-02-13 Shinko Electric Co., Ltd. Load port
US6120229A (en) * 1999-02-01 2000-09-19 Brooks Automation Inc. Substrate carrier as batchloader
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6841033B2 (en) 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
CN100341125C (en) * 2002-08-01 2007-10-03 松下电器产业株式会社 Eqipment and method for mounting electronic part
CN104616955A (en) * 2013-11-04 2015-05-13 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing equipment

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