JP2912595B2 - Developing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, there are a resist coating step, an exposure step and a development step. Of these, the development step is conventionally performed as follows. That is, the development of a resist film formed by adding a quinonediazide-based material as a photosensitizer to a phenol / volak resin material is performed by using an alkali-based developer mainly containing tramethylammonium hydroxide as a semiconductor wafer substrate (hereinafter, referred to as wafer). (Abbreviated as "abbreviated") is developed by spin coating on the surface. In this developing method, a mostly liquid developing substance is supplied onto a surface of a wafer by a nozzle.

For example, as shown in FIG. 5, a developing solution (2) is held on the upper surface of a wafer (1) by surface tension and interfacial tension.
Is rotated at a low speed to perform a developing process, or the wafer (1) is immersed in the developing solution (2). Further, the developing solution is sprayed on the surface of the wafer (1), and the developing solution ( And 2) accumulating and developing.

In any case, a liquid developing substance is supplied onto the wafer (1).
No. 33834, JP-A-57-1228, JP-A-57-1228
No. 32445, Japanese Patent Application Laid-Open No. 57-166032, Japanese Patent Application Laid-Open No.
JP-A-7-192955, JP-A-57-208134, JP-A-58-4147, JP-A-58-52645, JP-A-59-46649, JP-A-59-50440,
JP-A-60-126651, JP-A-61-14725
No. 6, JP-A-62-239532 and many others.

[0005]

Further, Japanese Patent Application Laid-Open No. 58-98640 discloses a developing method using a liquid and a gas.
No. 58-103045, which discloses that a resist formed on a substrate is subjected to plasma discharge for dry development.
No. etc.

However, the conventional method of developing a wafer is a method of developing a resist film adhered to the wafer (1) using a liquid developing material (developer). When fixing (3), the developing solution (2) cannot be quickly removed from the wafer, and excessive development, for example, development (dissolution) of a resist film in an unexposed portion of the wafer may occur. This overdevelopment is especially true for the recent 1M, 4M, 16M, 64M ultra-high density I
This is a problem in forming a fine circuit pattern on a wafer such as C, and an improvement has been required.

That is, as shown in FIG. 5A, first, a resist film (3) added to a wafer (1) is developed with a supplied developing solution (2), and then, is developed as shown in FIG. As shown in (1), in order to remove the developing solution (2) from the wafer (1), the developing solution (2) is shaken off by rotating the wafer (1) at a high speed by a rotating mechanism (not shown). However, a small amount of the developer (2) remains in a part of the wafer (1),
The remaining developer (2) develops a part of the wafer (1). In this development, the resist coating (3) up to the unexposed portion (4) of the wafer (1) is dissolved. That is, since the development is excessively performed compared to the predetermined development processing, it is difficult to form a fine circuit pattern on the wafer (1).

The present invention has been made in view of the above circumstances, and has been developed in such a manner that a developing gas is brought into contact with an object to be processed.
When, and an object thereof is to provide a developing device capable of effectively preventing the excessive development of the object to be processed.

[0009]

According to a first aspect of the present invention, there is provided a developing apparatus for performing a developing process by bringing a developing gas into contact with an object to be processed after exposure by an exposure apparatus,
A developing chamber in which the object to be processed is accommodated and which can be decompressed; a developing gas supply means for supplying a developing gas into the processing chamber; an exhaust means for exhausting the developing chamber; and an air supply means for introducing air into the developing chamber And a load lock chamber capable of being decompressed provided between the exposure apparatus and the development processing chamber, and a transport unit provided in the load lock chamber and transporting the workpiece between the exposure apparatus and the development processing chamber. , Cleaning the object to be processed in the development processing chamber
Cleaning liquid supply means for supplying a liquid ;
Drying means for drying , the developing chamber and the load lock chamber are brought into a reduced pressure state, and the object to be processed is transported by the transport means into the developing chamber, where the developing process is performed with a developing gas, and the development is completed. After that, supply of developing gas is stopped
And introducing air into the processing chamber by the air supply means.
The developing gas in the developing chamber is discharged by the exhaust means.
And cleans the object to be processed in the processing chamber by the cleaning liquid supply means.
After supplying the cleaning solution, the object to be processed is dried by the drying means after cleaning.
A developing device is provided.

[0010]

According to a second aspect of the present invention, there is provided a developing device for performing a developing process by bringing a developing gas into contact with an object to be exposed after being exposed by an exposure apparatus.
A developing gas supply unit for supplying a developing gas into the processing chamber; an exhaust unit for exhausting the developing chamber; a gas introducing unit for introducing and purging an inert gas into the developing chamber; an exposure apparatus and the developing chamber; a load lock chamber capable vacuum provided between, provided the load lock chamber, a transfer means for transferring the object to be processed with the developing chamber and the exposure apparatus, the current
Cleaning liquid supply hand that supplies cleaning liquid to the object to be processed in the image processing chamber
A step and drying means for drying the washed object to be processed , wherein the object to be processed is transported into the development chamber by the transport means with the development processing chamber and the load lock chamber in a reduced pressure state. followed by development by the developing gas, development
After completion, supply of the developing gas is stopped and the gas
More inert gas is introduced into the processing chamber and the exhaust gas is exhausted.
Means for discharging the developing gas from the developing chamber by means of
The cleaning liquid is supplied to the workpiece by the cleaning liquid supply means in the room
Further, the present invention provides a developing device characterized in that the object to be processed is dried by a drying unit after washing .

[0012] The third invention is directed to the first invention or the second invention.
And end point detecting means for detecting an end point of development.
A developing device is provided.

In the first invention, the object to be processed is transported into the developing chamber by the transport means with the developing chamber and the load lock chamber depressurized, and the developing process is performed by the developing gas therein. Turn off the supply of developing gas
And introducing air into the processing chamber by the air supply means.
The developing gas in the developing chamber is discharged by the exhaust means.
Therefore, it is necessary to remove the developing gas from the object
Can be.

That is, in the first invention, the object to be processed is developed with a developing gas. In the developing gas, the developing substance is suspended in a state of independent molecules, and the independent molecules adhere to the object to be processed and develop. So by introducing the atmosphere this
Molecules can be easily separated from the object,
By evacuating both, the molecules are quickly exhausted to the outside.
From the object to be processed,
The image gas is removed.

Following such an operation, the processing chamber
After supplying the cleaning liquid to clean the object, dry it.
Thus, the remaining developing gas particles can be quickly removed.
Wear. For this reason, excessive development in development using a development gas
Development can be prevented, and a high-precision circuit pattern can be formed.
Can be achieved. Also, in the same processing chamber,
Cleaning and drying with the processing solution
When unloaded from the processing room, it is in a clean state,
Particles may adhere during transport of the workpiece.
Can be effectively prevented, and the throughput is remarkably increased.
Can be enhanced.

[0016] In the second invention, instead of the air supply means of the first invention, since there is provided a gas introducing means for purging with an inert gas is introduced in the development chamber, in the first invention
In addition to the effect, the development gas is prevented from being released to the atmosphere
To be processed without contact with the atmosphere
Can be washed and dried.
The formation of unnecessary oxides can be prevented.
You. When the development is completed, the developing means is processed by the exhaust means.
While discharging the developing gas in the room, the gas introducing means
And purging by introducing an inert gas into the processing chamber.
Therefore, in addition to the above effects, the developing gas is released to the atmosphere.
The effect that it is prevented that it is prevented can be produced.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a developing process in a semiconductor wafer manufacturing process will be described below with reference to the accompanying drawings. The developing device according to this embodiment removes a resist film on an exposed portion of an exposed semiconductor wafer (hereinafter, simply referred to as a wafer),
This is a dry developing device that is disposed adjacent to a wafer exposure device and that installs and develops a wafer in a development processing chamber filled with a developing gas.

As shown in FIGS. 1 (a) and 1 (b), this dry developing apparatus accommodates an exposed wafer (5), and is provided in a gas-tight and pressure-reducible manner by shutting off the air. A processing chamber (6), a handling arm (7) for carrying the exposed wafer (5) into the development processing chamber (6), and taking it out of the development processing chamber (6) after development; and a handling arm (7). And a load lock chamber (18) provided so as to be capable of reducing pressure, a nozzle (10) for supplying a developing gas into the developing processing chamber (6), and a gas supply system (12). The development processing chamber 6 is provided with a spinner (9) for rotatably and horizontally supporting the wafer (5).

The developing chamber (6) has a cylindrical shape whose upper surface is closed by a plate-like material.
50mm x 2mm thick stainless steel upper cup (6
a) and a stainless steel lower cup (6b) having a diameter of 400 mm, a height of 150 mm, a plate thickness of 2 mm, and a stainless steel, for example, having an outer diameter of 405 mm x It is airtightly provided via a neoprene O-ring (6c) having an inner diameter of 395 mm and a height of 6 mm.

The upper cup (6a) can be moved up and down by an elevating mechanism, and an airtight chamber (8) is formed at the position where the upper cup (6a) is lowered to coincide with the lower cup (6b). In order to check whether the wafer (5) has reached a predetermined position on the upper surface of the spinner (9), for example, in the airtight chamber (8),
Alternatively, when performing maintenance for troubles occurring in the airtight chamber (8), the upper cup (6a) is raised by the lifting mechanism, and the upper cup (6a) is separated from the lower cup (6b).
Open the airtight chamber (8).

A nozzle (10) for introducing a developing gas, for example, an alkali element compound gas into the hermetic chamber (8).
Is provided at the center of the upper cup (6a) so that the discharge port faces a spinner (9) surface described later. This nozzle (1
At the tip of 0), the diffuser plate (11) to be filled with the developing gas containing the alkaline element compound dispersed and introduced around the airtight chamber (8) faces the spinner (8). It is provided in.

At the opposite end of the nozzle (10), a supply system (12) for introducing the developing gas and the atmosphere into the airtight chamber (8) is provided. The supply system (12) is piped so that the nozzle (10) communicates with the developing gas source (12a) containing an alkali element compound. An air supply system (12b) for sending air into the airtight chamber (8) is provided in the middle of the pipe. This air supply system (12b)
A switching valve (12c) is provided so as to be able to select between the developing gas source and the developing gas source (12a).

That is, the developing gas containing the alkali element is introduced into the hermetic chamber (8) when developing the wafer (5) in the hermetic chamber (8).
Furthermore, when fixing the developed wafer (5), by switching switches valve (12c) in the air supply system (12 b), are provided as to introduce air into the airtight chamber (8) within.

The upper surface of the upper cup (8a) forming the hermetic chamber (8) is defined by the molecules of the alkali-based compound gas adhering to the wafer (5) after the wafer (5) is developed. A cleaning nozzle (14) for discharging a cleaning liquid (13) to remove the dissolved resist is provided in the upper cup (6a).

The cleaning nozzle (14) is provided with a cleaning liquid (1) based on a command from a controller (not shown), for example, a CPU.
On-off valve (15) for discharging 3) to wafer (5)
Is provided.

The spinner (9) is provided in the airtight chamber (8).
Are provided at the center of the lower cup (6b), on which the transferred wafer (5) is placed and supported. Below the spinner (9), a rotating mechanism, for example, a motor (16), for shaking off the cleaning liquid (13) together with the dissolved resist when cleaning the wafer (5) is provided.

The lower cup (6b) has an airtight chamber.
A discharge system (17) for exhausting the inside of (8) and discharging the cleaning liquid (13) to the wafer (5) to discharge the cleaned liquid is provided vertically on the bottom surface. The lower cup (6b) is provided with an on-off valve (17a) for exhausting the gas in the airtight chamber (8) to the outside and then making the airtight chamber (8) airtight.

The handling arm (7) is provided in a load lock chamber (18) provided on a side surface of the airtight chamber (8), and is exposed from the exposure device (19) to the airtight chamber (8). The wafer (5) is installed so as to be able to carry it.

Next, the operation will be described. First, a command signal is transmitted from the exposure device (19) to the control unit on the dry developing device side to develop the exposed wafer (5). Upon receiving this signal, the dry developing device lowers the upper cup (6a) in accordance with a program stored in advance to match the lower cup (6b) fixed below the upper cup (6a). That is, an airtight chamber (8) for dry developing the wafer (5) is formed.

A handling arm (7) in a load lock chamber (18) provided between the airtight chamber (8) and the exposure apparatus.
Then, the wafer (5) is transferred from the exposure apparatus (19) into the hermetic chamber (8). That is, the wafer (5) is placed on the upper surface of the spinner (9) provided in the center of the hermetic chamber (8).
To support. In this state, the pressure in the hermetic chamber (8) is reduced to a predetermined negative pressure value, for example, about 0.5 Torr, and the pressure of the wafer (5) is reduced.
Is subjected to dry development.

A pressure sensor (not shown) provided in the hermetic chamber (8) senses that a predetermined pressure value has been reached and outputs a signal. Switch to 12a) side.

A developing gas containing an alkaline element compound is introduced from the side of the developing gas source (12a) into the hermetic chamber (8) at a flow rate of, for example, 2 l / s to fill the chamber. At this time, it is desirable that the exhaust pump be appropriately operated. The innumerable molecules P of the filled developer gas adhere to the surface of the wafer (5) supported by the spinner (9), as shown in FIGS. 2 (a) and 2 (b). The motor (1
The rotation speed according to 6) can be appropriately selected. Of course, it may be stopped. Further, the wafer may be heated or cooled to an optimum temperature according to the type of the developing gas. Further, a development end point detection device may be provided to automatically stop.

The attached numerous molecules P react with the exposed resist film (5a) and develop (dissolve). This dissolution amount dissolves by the same amount as the molecular P amount. On the dissolved resist film (5a), the molecules P of the developing gas are adhered again as shown in FIG. 2 (c). The attached molecule P dissolves the dissolved resist film (5a) further deeply. An inert gas may be introduced into the airtight chamber (8) and purged at the same time as the detection of the development end point to terminate the development processing. After the development, the completed wafer is unloaded through the load lock. As described above, the above-mentioned exposed resist film (5a) is subjected to predetermined development by repeating the above-described method.

Next, as shown in FIG. 2D, when a predetermined developing time has elapsed, the supply of the developing gas is stopped, and the developing gas in the hermetic chamber (8) is removed. That is, the switching valve (1) is provided to supply the atmosphere into the airtight chamber (8).
2c) is switched to the atmosphere piping side. Then, the air is introduced into the airtight chamber (8), and the developing gas is exhausted from the exhaust system (17). In this case, if the development processing space for the wafer is set to a volume necessary to accommodate the wafer, the throughput is improved. Since the developing gas is removed from the hermetic chamber (8) by this exhaustion, the phenomenon of adhesion of the molecules P of the developing gas to the surface of the wafer (5) is eliminated, and the developing process of the wafer (5) is stopped. In order to improve the throughput, a spare chamber may be provided on the loader side or the unloader side of the development processing chamber or on the common side.

Next, as shown in FIG. 2E, the molecules P attached to the unexposed portions of the wafer (5) and the dissolved resist film (5a) are removed by a cleaning liquid.

Next, as shown in FIG. 2 (f), the wafer (5) cleaned with the cleaning liquid (13) is rotated at a high speed and dried. Wafer (5) developed in this way
Is taken out of the airtight chamber (8) by the carry-out handling arm (7). These steps are repeated to develop a plurality of wafers (5).

In the above embodiment, the developing gas containing an alkali element is filled in the hermetic chamber (8), and the developing process is performed in a state where the wafer (5) is stored in the hermetic chamber (8) in advance. However, the developing gas containing an alkaline element may be filled in the hermetic chamber (8), and the wafer (5) may be passed through the hermetic chamber (8) for development. The developing gas may be any gas having a developing characteristic.

In the above embodiment, the wafer (5) is cleaned after developing in the single airtight chamber (8). However, as shown in FIG. Airtight chamber (20) and cleaning chamber (2
1) and may be installed independently.

Further, in the above embodiment, the developing gas is blown down from the top to the bottom. However, as shown in FIG. 4, the developing gas (22) is introduced and filled from left and right, for example, from left to right. It may be.

In the above embodiment, since the resist film on the wafer is developed with the developing gas containing the alkali element compound, the developing gas can be easily removed from the wafer. Can be immediately stopped. Due to this stop, excessive development processing of the wafer can be prevented.

Further, in order to excite the developing gas, the developing gas may be processed into a plasma by an electron beam, discharge, or the like. In this case, a dome-shaped mechanism that presses the periphery is desirable in consideration of the adhesion of the substrate such as a wafer to the mounting table.

In the above embodiment, an example in which the present invention is applied to a developing process after resist exposure of a semiconductor wafer is described. However, any developing process may be used. For example, a developing process for a substrate having a liquid crystal driving circuit, a developing process for a printed board, It can be applied to any other processes and the like.

As described above, according to the present invention, it is possible to reliably prevent an excessive development process of a processing object.
And effectively prevent particles from adhering.
Therefore, a highly accurate circuit pattern can be formed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a schematic configuration of a dry developing device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the wafer for describing a process in which the wafer is developed using the apparatus of FIG. 1;

FIG. 3 is a schematic sectional view showing a dry developing apparatus according to another embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a dry developing device according to still another embodiment of the present invention.

FIG. 5 is a cross-sectional view of a wafer for describing a step of developing the wafer by a conventional method.

[Explanation of symbols]

 Reference Signs List 5 Wafer 6 Developing chamber 6a Upper cup 6b Lower cup 7 Handling arm 8 Airtight chamber 9 Spinner 10 Nozzle 12 Gas supply system 13 Cleaning liquid 14 Cleaning nozzle 17 Exhaust system 18 Load lock chamber 19 Exposure device

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) G03F 7/36

Claims (3)

(57) [Claims] 1. A developing apparatus for performing a developing process by bringing a developing gas into contact with an object to be processed after being exposed by an exposure apparatus, wherein the developing apparatus accommodates the object to be processed and can be decompressed; A developing gas supply unit that supplies air, an exhaust unit that exhausts the development processing chamber, an air supply unit that introduces air into the development processing chamber, and a decompressible load provided between the exposure apparatus and the development processing chamber. A lock chamber, a transport unit provided in the load lock chamber, for transporting the workpiece between the exposure apparatus and the developing chamber, and a cleaning liquid supply for supplying a cleaning liquid to the workpiece in the developing chamber.
Means, and drying means for drying the washed object to be processed , wherein the processing object is transported into the development processing chamber by the transport means with the development processing chamber and the load lock chamber in a reduced pressure state,
In the process, a developing process is performed using a developing gas.
The supply of the developing gas is stopped, and the supply of the developing gas is stopped.
The atmosphere is introduced into the developing device, and the developing process is
Evacuates the developing gas inside the chamber and supplies the cleaning liquid inside the processing chamber.
The cleaning liquid is supplied to the object to be processed by the step, and the cleaning
A developing device characterized by further drying the object. 2. A developing apparatus for performing a developing process by bringing a developing gas into contact with an object to be processed after being exposed by an exposure apparatus, comprising: a developing chamber in which the object is accommodated and which can be depressurized; A developing gas supply means for supplying a gas, an exhaust means for exhausting the inside of the developing chamber, a gas introducing means for introducing and purging an inert gas into the developing chamber, and provided between the exposure apparatus and the developing chamber. A load lock chamber capable of reducing pressure, a transport unit provided in the load lock chamber, for transporting the workpiece between the exposure apparatus and the developing chamber, and a cleaning liquid supply for supplying a cleaning liquid to the workpiece in the developing chamber.
Means, and drying means for drying the washed object to be processed, the object to be processed is transported into the physical image processing chamber by the transport means with the development processing chamber and the load lock chamber in a reduced pressure state,
In the process, the developing process is performed with the developing gas, and the development is completed.
After that, the supply of the developing gas is stopped, and
Introducing an inert gas into the processing chamber and exhausting the gas;
Discharges the developing gas in the processing chamber, and
The cleaning liquid is supplied to the object by the cleaning liquid
A developing device, wherein the object to be processed is dried by a drying unit after the cleaning . 3. An end point detecting means for detecting an end point of development.
Claim 1 or Claim characterized by further comprising
3. The developing device according to 2.