JP2890890B2 - Manufacturing method of connecting member - Google Patents
Manufacturing method of connecting memberInfo
- Publication number
- JP2890890B2 JP2890890B2 JP3127237A JP12723791A JP2890890B2 JP 2890890 B2 JP2890890 B2 JP 2890890B2 JP 3127237 A JP3127237 A JP 3127237A JP 12723791 A JP12723791 A JP 12723791A JP 2890890 B2 JP2890890 B2 JP 2890890B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- mask
- conductive particles
- hole
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000002245 particle Substances 0.000 claims description 66
- 239000000853 adhesive Substances 0.000 claims description 39
- 230000001070 adhesive effect Effects 0.000 claims description 39
- 239000012790 adhesive layer Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 9
- -1 polyethylene Polymers 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000728 polyester Chemical group 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Manufacturing Of Electrical Connectors (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、相対峙する電極若しく
は回路間を電気的に接続するとともに接着固定するのに
用いられる接続部材の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a connecting member used for electrically connecting opposed electrodes or circuits and for bonding and fixing them.
【0002】[0002]
【従来の技術】IC、LSI、チップコンデンサ等の半
導体チップの電極をガラスや合成樹脂及び金属等よりな
る基板の表面に所定回路を形成してなる基板回路上に直
接接続したり、あるいはこれら基板回路同士を直接接続
したりするいわゆる高密度電極の接続方法として、相対
峙する電極若しくは回路間に接着剤を主成分とする接続
部材を介して接続する方法が知られている。2. Description of the Related Art Electrodes of semiconductor chips such as ICs, LSIs, chip capacitors and the like are directly connected to a substrate circuit formed by forming a predetermined circuit on the surface of a substrate made of glass, synthetic resin, metal, or the like, or these substrates are connected to each other. As a method of connecting so-called high-density electrodes for directly connecting circuits, a method of connecting electrodes facing each other or a circuit via a connection member mainly composed of an adhesive between circuits is known.
【0003】この接続部材を用いた例としては、例えば
実開昭62−107444号公報にみられるように絶縁
性接着剤中にカーボン、ニッケル、半田及び表面に導電
層を形成したプラスチック粒子などの導電粒子を混入し
た異方導電性接着剤を用いて加圧により厚み方向に電気
的接続を得る方法と、導電粒子を用いずに絶縁性接着剤
の接続時の加圧により電極面の直接接触による電気的接
続を得て、残余の接着剤は回路外に排除して接続する方
法が知られている。[0003] Examples of the use of this connecting member include carbon, nickel, solder and plastic particles having a conductive layer formed on the surface thereof in an insulating adhesive as shown in Japanese Utility Model Application Laid-Open No. 62-107444. A method of obtaining electrical connection in the thickness direction by applying pressure using an anisotropic conductive adhesive mixed with conductive particles, and a method of directly contacting the electrode surface by applying pressure when connecting an insulating adhesive without using conductive particles A method is known in which an electrical connection is obtained and the remaining adhesive is removed outside the circuit for connection.
【0004】高密度電極の代表例として半導体チップの
場合についてみると、チップ面にバンプと呼ばれる突出
電極が形成されている場合が多く、このバンプはまた基
板回路上に設けられる場合もある。いずれの場合もバン
プ形成は複雑な工程が必要であり、不良の発生と歩留り
の低下やバンプ材料であるAu、Ag、Cu及び半田等
の貴重な金属の消費により製造コストが高い問題点を有
している。このため半導体チップを回路材料である例え
ばアルミ配線のまま、若しくはその上に金属の拡散防止
用バリヤメタル層を形成した状態で接続電極とするバン
プレス接続方式の試みも一部で行われているが、特性が
不十分なことから実用化が困難な状況にある。In the case of a semiconductor chip as a typical example of a high-density electrode, a protruding electrode called a bump is often formed on a chip surface, and the bump is sometimes provided on a substrate circuit. In any case, the bump formation requires a complicated process, and has a problem that the production cost is high due to the occurrence of defects and a decrease in yield, and the consumption of precious metals such as Au, Ag, Cu and solder which are bump materials. doing. For this reason, some attempts have been made to use a bumpless connection method in which a semiconductor chip is used as a circuit material, for example, an aluminum wiring as it is, or a barrier metal layer for preventing metal diffusion is formed thereon as a connection electrode. However, it is difficult to put it to practical use due to insufficient properties.
【0005】導電粒子を用いた接着剤による接続方式
は、電気的接続の信頼性向上のために電極上の粒子数を
増加させると隣接電極間にも粒子が高密度な状態で存在
してしまい絶縁性が不十分となったり、リークやショー
トを発生するなど絶縁性の保持に問題を生じてしまう。
逆に粒子数を減少すると電極上の粒子数が不十分となり
接続信頼性が低下する。この相反する傾向は、接続時の
加熱加圧などにより導電粒子が接着剤とともに電極上か
ら流出する現象により更に助長され、例えばピッチ90
μm以下といった高密度な接続に対応することは困難で
ある。In the connection method using an adhesive using conductive particles, if the number of particles on an electrode is increased in order to improve the reliability of electrical connection, the particles are present at a high density between adjacent electrodes. Insufficiency in insulation, leaks and short-circuits, and other problems occur in maintaining insulation.
Conversely, when the number of particles is reduced, the number of particles on the electrode becomes insufficient and the connection reliability decreases. This contradictory tendency is further promoted by the phenomenon that the conductive particles flow out of the electrodes together with the adhesive due to heating and pressurizing at the time of connection.
It is difficult to cope with high-density connections such as μm or less.
【0006】また絶縁性接着剤による接続方式では、隣
接電極間の絶縁性は良好であるが、バンプ高さにバラツ
キのあることから、確実な接続信頼性を得難い欠点を有
している。すなわち、1チップあたりのバンプ数は、例
えば10〜500個と多数でありバンプの高さは1〜5
0μm程度である。これら多数の電極を、例えば0.5
μm以内のバラツキで形成管理することは極めて困難で
ある。バンプ高さが不均一であると、高さの大きいバン
プは容易に基板回路面に接触できるが、高さの低いバン
プは基板回路面との間に空隙を生じてしまい電気的な接
続が得られない。更にこの方式は、低コスト化の有望方
式であるバンプレス接続方式に対し、電極の接触が得難
いため原理的に対応することができない欠点を有してい
る。The connection method using an insulating adhesive has good insulation properties between adjacent electrodes, but has a disadvantage that it is difficult to obtain reliable connection reliability due to variations in bump height. That is, the number of bumps per chip is as large as 10 to 500, for example, and the bump height is 1 to 5
It is about 0 μm. These multiple electrodes are, for example, 0.5
It is extremely difficult to control the formation with a variation within μm. If the bump heights are not uniform, the larger bumps can easily contact the circuit surface of the board, but the lower bumps will create an air gap between the bumps and the circuit board, making electrical connection possible. I can't. Further, this method has a disadvantage that it cannot be applied in principle to the bumpless connection method, which is a promising method for cost reduction, because it is difficult to obtain electrode contact.
【0007】上記接着剤方式のあい路打開を目的に、最
近例えば特開昭63−276237号公報や特開昭63
−289824号公報などに見られるように、バンプ上
のみに導電性接着剤を形成して基板回路と接続する試み
もある。これらの方法では導電性接着剤を必要部に形成
するために、導電性接着剤の塗着工程が必要であるが、
清浄度が特に重要な半導体の製造工程に揮発しやすい有
機溶剤を持込むことによる清浄度の低下や作業環境の悪
化等の問題点がある。For the purpose of breaking the road in the adhesive system, for example, Japanese Patent Application Laid-Open No. 63-276237 and Japanese Patent Application Laid-Open
As disclosed in, for example, JP-A-289824, there is also an attempt to form a conductive adhesive only on a bump and connect it to a substrate circuit. In these methods, in order to form the conductive adhesive in the required portion, a conductive adhesive application step is required,
There are problems such as a decrease in cleanliness and a deterioration in the working environment due to the introduction of a volatile organic solvent into a semiconductor manufacturing process in which cleanliness is particularly important.
【0008】更に導電性接着剤を必要部に塗着や転写法
で形成する方法は、シルクスクリーンや転写治具などの
点で製造技術の限界に近く、より一層の高密度化に対応
することが困難となっていた。Further, the method of applying a conductive adhesive to a necessary portion by coating or transfer method is close to the limit of the manufacturing technology in terms of a silk screen, a transfer jig, and the like, and corresponds to a higher density. Had become difficult.
【0009】[0009]
【発明が解決しようとする課題】本発明は微小面積の接
続信頼性と絶縁性に優れ、高密度電極の接続が可能であ
り、また半導体チップ及び/又は回路上へのバンプ形成
の有無にかかわらず適用することが可能であり、更に半
導体製造工程に有機溶剤や導電性接着剤などを持込むこ
とが不要な接続部材の製造方法を提供することを目的と
する。SUMMARY OF THE INVENTION The present invention is excellent in connection reliability and insulation properties in a small area, enables connection of high-density electrodes, and regardless of whether bumps are formed on a semiconductor chip and / or a circuit. It is another object of the present invention to provide a method for manufacturing a connecting member which can be applied without using an organic solvent or a conductive adhesive in a semiconductor manufacturing process.
【0010】[0010]
【課題を解決するための手段】すなわち、本発明は下記
工程よりなる接続部材の製造方法に関する。 (1)剥離可能な基材上にエポキシ系接着剤からなる絶
縁性接着剤層を形成する工程、 (2)必要部に貫通孔を有するマスクを前記接着剤層の
表面に密着させる工程、 (3)マスクの貫通孔からエキシマレーザ光を照射して
前記接着剤層の厚み方向の少なくとも一部に孔を設ける
工程、 (4)マスクの貫通孔から導電粒子を孔内に配設する工
程及び (5)マスクを前記接着剤層の表面から除去する工程。That is, the present invention relates to a method for manufacturing a connecting member comprising the following steps. (1) a step of forming an insulating adhesive layer made of an epoxy-based adhesive on a peelable base material; (2) a step of bringing a mask having a through hole in a necessary portion into close contact with the surface of the adhesive layer; 3) irradiating excimer laser light from a through hole of the mask to form a hole in at least a part of the adhesive layer in the thickness direction; (4) arranging conductive particles in the hole from the through hole of the mask; (5) removing the mask from the surface of the adhesive layer;
【0011】本発明では接着剤層の必要部に孔を設ける
手段としてレーザー光を用いることを特徴とする。レー
ザーとしてはYAGレーザー、炭酸ガスレーザーも使用
可能であるが、本発明ではエキシマレーザを用いること
が好適である。エキシマレーザーについては、例えば
(株)シーエムシー発行の機能材料、1989年10月
号及び11月号に詳しく記述されている。エキシマレー
ザーは化学結合を直接開裂させるに必要な紫外光領域の
高エネルギーのフォトンを高強度で発振できるレーザー
である。The present invention is characterized in that a laser beam is used as a means for forming a hole in a necessary portion of the adhesive layer. As the laser, a YAG laser or a carbon dioxide laser can be used, but in the present invention, it is preferable to use an excimer laser. The excimer laser is described in detail in, for example, Functional Materials, October and November 1989, issued by CMC Corporation. An excimer laser is a laser that can oscillate high-energy photons in the ultraviolet region necessary for directly breaking chemical bonds with high intensity.
【0012】このレーザーを照射すると、照射部分が瞬
間的にプラズマ発光と衝撃音を伴って分解、飛散する
(アブレーション)。このレーザーを用いることにより
シャープな断面の孔を設けることかでき、ミクロンレベ
ルでの形状、位置制御が可能で、孔の深さも±0.1μ
m精度で制御できる。代表的な照射レーザーと波長を例
示すると、ArF(193nm)、KrF(248n
m)、XeCl(308nm)、XeF(351nm)
である。When this laser is irradiated, the irradiated portion is instantaneously decomposed and scattered with plasma emission and impact sound (ablation). By using this laser, a hole with a sharp cross section can be provided, shape and position control at the micron level is possible, and the depth of the hole is ± 0.1μ.
It can be controlled with m precision. When a typical irradiation laser and wavelength are exemplified, ArF (193 nm), KrF (248 n
m), XeCl (308 nm), XeF (351 nm)
It is.
【0013】本発明を以下図面に基づいて説明する。図
1は接続部材の製造方法を示す断面模式図である。
(1)の工程において、接着剤層2を形成する。このと
き接着剤層2の剥離が可能な基材1上に接着剤層を形成
することが好ましい。基材1は必要に応じて用いる材料
であり、接続部材の片面あるいは両面に形成し、塵埃等
の付着を防止することができる。基材1の使用にあたっ
ては、接続部材の使用時に剥離可能とすることが必要で
あり、その指標としてJIS K−6768による濡れ
張力を35dyn/cm以下とすることが好ましい。そ
のためには、ポリエチレンやポリテトラフルオロエチレ
ン等の低表面張力材料を用いることや、ポリエチレンテ
レフタレートやポリイミド等にあっては前記の低表面張
力材料やシリコーンなどで表面処理したものを用いるこ
とが好ましい。The present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a method for manufacturing a connection member.
In the step (1), the adhesive layer 2 is formed. At this time, it is preferable to form an adhesive layer on the substrate 1 from which the adhesive layer 2 can be peeled off. The base material 1 is a material used as needed, and is formed on one side or both sides of the connection member, and can prevent adhesion of dust and the like. In using the base material 1, it is necessary that the connecting member be peelable at the time of use. As an index, it is preferable that the wetting tension according to JIS K-6768 is 35 dyn / cm or less. For this purpose, it is preferable to use a low surface tension material such as polyethylene or polytetrafluoroethylene, or to use polyethylene terephthalate or polyimide which is surface-treated with the above low surface tension material or silicone.
【0014】接着剤2は、接続後の耐熱性や耐湿性に優
れている硬化性絶縁材料を用いることが好ましく、中で
もエポキシ系接着剤は、短時間硬化が可能で接続作業性
がよく、また分子構造上接着性に優れる等の特徴から好
ましい。エポキシ系接着剤としては、例えば高分子量エ
ポキシ樹脂、固形エポキシ樹脂と液状エポキシ樹脂との
混合物、ウレタンやポリエステル、NBR等で変成した
エポキシ樹脂を主成分とし、これに潜在性硬化剤やカッ
プリング剤などの各種変性剤、触媒等を添加した系から
なるものが用いられる。As the adhesive 2, it is preferable to use a curable insulating material having excellent heat resistance and moisture resistance after connection. Among them, an epoxy adhesive can be cured in a short time and has good connection workability. It is preferable because of its characteristics such as excellent adhesiveness in molecular structure. Examples of the epoxy adhesive include a high-molecular-weight epoxy resin, a mixture of a solid epoxy resin and a liquid epoxy resin, and an epoxy resin modified with urethane, polyester, NBR, or the like, and a latent curing agent or a coupling agent. And those containing various modifiers, catalysts and the like.
【0015】これらの接着剤は室温近辺で粘着性を有す
るものが導電粒子の配置固定を行い易い。接着剤層の厚
みは5〜70μmが好ましく、良好な接続信頼性を得る
ためには10〜35μmとすることが更に好ましい。These adhesives having tackiness at around room temperature facilitate the placement and fixing of the conductive particles. The thickness of the adhesive layer is preferably from 5 to 70 μm, and more preferably from 10 to 35 μm in order to obtain good connection reliability.
【0016】次に、(2)の工程において、必要部に貫
通孔3を有するマスク4を前記接着剤層2の表面に密着
させる。ここに貫通孔の配置は接続すべき電極の配置と
一致すべきであり、少なくともその中心点の配置を貫通
孔と電極とで一致させて形成するようにする。マスクの
貫通孔の形成には、YAGや炭酸ガスレーザー、精密ド
リル、プラズマや薬液によるエッチング及び繊維状物で
形成した金鋼等が用いられる。Next, in step (2), a mask 4 having a through hole 3 at a necessary portion is brought into close contact with the surface of the adhesive layer 2. Here, the arrangement of the through-holes should coincide with the arrangement of the electrodes to be connected, and at least the arrangement of the center point of the through-holes and the electrodes should be matched. For the formation of the through holes of the mask, YAG, carbon dioxide laser, precision drill, etching by plasma or chemical solution, and gold steel formed by fibrous material are used.
【0017】マスク4はレーザー光を遮蔽可能であれば
よく、スレンレスやAl、Cu、Zn、Ti、Beなど
の各種金属が好ましく適用できるが、セラミック、ガラ
ス、石英及びこれらに金属薄膜を形成したものなどの適
用が可能である。また、マスクは最終工程で接着剤層か
ら剥離できることが必要で、表面が剥離剤で処理されて
いてもよい。The mask 4 only needs to be able to shield the laser beam, and various metals such as stainless steel, Al, Cu, Zn, Ti, and Be can be preferably used. Ceramics, glass, quartz, and metal thin films formed on these materials can be used. Applications such as things are possible. Further, the mask needs to be able to be peeled off from the adhesive layer in the final step, and the surface may be treated with a peeling agent.
【0018】マスクは接着剤層の表面にロール、加熱ロ
ール、平行板間でのプレスなどで気泡が入らぬようよく
密着させる。気泡が入ると導電粒子の配置の精度が低下
する。マスクの厚みは特に規定しないが、上記した作業
性や用いる導電粒子の粒径等を考慮して決定する。The mask is brought into close contact with the surface of the adhesive layer by a roll, a heating roll, a press between parallel plates or the like so that air bubbles do not enter. When air bubbles enter, the accuracy of the arrangement of the conductive particles decreases. The thickness of the mask is not particularly limited, but is determined in consideration of the above-described workability, the particle size of the conductive particles to be used, and the like.
【0019】次に、(3)の工程において、密着したマ
スクの貫通孔3からレーザー光を接着剤面に照射する。
照射時のビーム径、繰り返し数、パルス巾、出力及び波
長などを調整することで所望の深さの孔を接着剤層の厚
み方向に作製できる。孔は貫通孔としてもよい。エキシ
マレーザーを用いた場合は、マスク上からエキシマレー
ザーを全面照射しても貫通孔部の接着剤のみがアブレー
ションできる。この理由は接着剤等の高分子物質に比べ
マスク材質である金属やセラミックス等が結合エネルギ
ーが高いこととエキシマレーザーの透過率が低いためで
ある。Next, in the step (3), a laser beam is applied to the adhesive surface from the through-hole 3 of the mask that is in close contact.
A hole having a desired depth can be formed in the thickness direction of the adhesive layer by adjusting the beam diameter, the number of repetitions, the pulse width, the output, and the wavelength at the time of irradiation. The holes may be through holes. When an excimer laser is used, only the adhesive in the through hole can be ablated even when the entire surface is irradiated with the excimer laser from above the mask. The reason for this is that the mask material, such as metal or ceramic, has a higher binding energy and a lower excimer laser transmittance than a polymer material such as an adhesive.
【0020】ここで例えばビーム径を絞り込むことで貫
通孔の面積のうちのごく一部のみに孔開けすることも可
能であり、例えばマスクの開孔面積が40μm角に対し
20μm角といったマスクの精度以上の高精度加工も可
能となる。また接続部材の周囲を切断する際にも、切断
を必要とする部分のマスクに開孔部を設けてエキシマレ
ーザーを照射することで、高精度な寸法で接続部材を切
断することができる。エキシマレーザーは深さ方向のア
ブレーションが可能なことから、接着剤層のみを切断
し、基材層は切断せずに保持材として用いることも可能
である。この切断方法によれば切断部周辺に変形や損傷
を及ぼさない。Here, for example, by narrowing the beam diameter, it is also possible to form a hole in only a small part of the area of the through-hole. For example, the precision of the mask is such that the opening area of the mask is 20 μm square compared to 40 μm square. The above high-precision processing is also possible. Also, when cutting the periphery of the connection member, the connection member can be cut with high precision dimensions by irradiating an excimer laser by providing an opening in a portion of the mask that requires cutting. Since the excimer laser can perform ablation in the depth direction, it can be used as a holding material without cutting the adhesive layer but cutting the base layer. According to this cutting method, no deformation or damage is caused around the cut portion.
【0021】エキシマレーザーの照射工程の後は、一般
のいわゆるフィルムマスクに変更してもよいし、もちろ
んそのまま当初のマスクを使用することも可能である。After the excimer laser irradiation step, the film mask may be changed to a general so-called film mask, or, of course, the original mask may be used as it is.
【0022】次に、(4)の工程でマスクの貫通孔から
導電粒子5を孔内に配設する。本発明に用いる導電粒子
5はNi、Fe、Cr、Co、Al、Sb、Mo、P
b、Sn、In、Cu、Ag、Au等の金属、これらの
酸化物及びこれらの二種以上の複合体若しくは合金、あ
るいはカーボンなどからなる一般的な導電粒子であれば
よく、これら導電粒子はまた、少なくとも粒子の表面が
導電性であれば使用可能である。Next, in the step (4), the conductive particles 5 are arranged in the holes from the through holes of the mask. The conductive particles 5 used in the present invention are Ni, Fe, Cr, Co, Al, Sb, Mo, P
Metals such as b, Sn, In, Cu, Ag, and Au, oxides of these, and composites or alloys of two or more of these, or general conductive particles made of carbon or the like may be used. In addition, it can be used as long as at least the surface of the particles is conductive.
【0023】これらの導電粒子の中では、接続時の加
熱、加圧、加熱加圧などの条件下で変形性を示す粒子が
好ましく適用できる。変形性粒子としては、例えばポリ
スチレンやエポキシ樹脂などの高分子核材の表面をN
i、Ag、Au、Cu、半田などの導電性金属薄層で被
覆した粒子や低融点金属粒子などがある。接続時の条件
としては、例えば温度250℃以下、圧力100kgf
/cm2以下、時間30秒以下が一般的であり、高温高
圧になるほど周辺材料に熱損傷を与えることから温度2
00℃以下、圧力50kgf/cm2以下とすることが
好ましい。導電粒子の変形の確認は接続体の断面を電子
顕微鏡で観察することにより行われる。導電粒子の平均
粒径は、高密度な電極配置に対応するために30μm以
下の小粒径が好ましく、3〜15μm程度とすることが
より好ましい。Among these conductive particles, particles exhibiting deformability under conditions such as heating, pressurizing, and heating and pressurizing at the time of connection can be preferably applied. As the deformable particles, for example, the surface of a polymer core material such as polystyrene or epoxy resin is
Examples include particles coated with a thin conductive metal layer such as i, Ag, Au, Cu, and solder, and low melting point metal particles. Conditions for connection include, for example, a temperature of 250 ° C. or less, a pressure of 100 kgf.
/ Cm 2 or less and the time is generally 30 seconds or less.
It is preferable that the temperature is not higher than 00 ° C. and the pressure is not higher than 50 kgf / cm 2 . Confirmation of the deformation of the conductive particles is performed by observing the cross section of the connection body with an electron microscope. The average particle size of the conductive particles is preferably a small particle size of 30 μm or less, and more preferably about 3 to 15 μm in order to correspond to a high-density electrode arrangement.
【0024】貫通孔内における導電粒子の配設は図2に
示すように、単粒子による配設(a、b)や複数粒子に
よる配設(c、d、e、f)のいずれでも可能である。
複数粒子の場合は、粒子間凝集力や粒子の表面処理に用
いられた粘着性樹脂の粘着力により配設可能となる。導
電粒子はそのまま貫通孔内に配設(a、c、e)しても
よい。また樹脂でその表面を被覆(b、d)したり、あ
るいは樹脂中に導電粒子を分散(f)する等の表面処理
によってもよい。導電粒子の表面処理を行わない場合
は、単粒子状(a)とすることが接着剤2と接触するこ
とで脱落し難いことから好ましい。表面処理を行う場合
は、小粒径粒子を密集して形成できる利点がある。As shown in FIG. 2, the arrangement of the conductive particles in the through-holes can be either single particle arrangement (a, b) or plural particle arrangements (c, d, e, f). is there.
In the case of a plurality of particles, it can be arranged by the cohesive force between the particles or the adhesive force of the adhesive resin used for the surface treatment of the particles. The conductive particles may be directly provided (a, c, e) in the through-hole. Alternatively, a surface treatment such as coating (b, d) the surface with a resin or dispersing (f) conductive particles in the resin may be used. In the case where the surface treatment of the conductive particles is not performed, it is preferable that the conductive particles are in the form of a single particle (a) because the particles do not easily fall off when coming into contact with the adhesive 2. In the case of performing the surface treatment, there is an advantage that small-diameter particles can be formed densely.
【0025】次に、(5)の工程において、マスクを除
去して接着剤層2上に導電粒子5を配設固定した接続部
材が得られる。Next, in step (5), the connection member in which the conductive particles 5 are disposed and fixed on the adhesive layer 2 by removing the mask is obtained.
【0026】このようにして得られた接続部材を接続す
べき電極間に必要に応じ基材1を除去して配置し、例え
ば加熱加圧を行うことで、導電粒子5は接着剤層2中に
埋った状態となり、次いで電極と接触、変形し両回路の
接続が可能となる。(6)の工程は(5)の工程の後で
必要に応じて行うものであり、基材1′と接着剤層2′
よりなる接着フィルムを積層してなる。この場合は導電
粒子を上部からも固定できるので導電粒子が脱落し難
く、また両面が基材1及び1′で覆われているので塵埃
の付着防止に効果的である。なお、導電粒子5は接着剤
中に埋没しないで導電粒子が接着剤面から露出して突出
した状態でもよい。The connecting member thus obtained is disposed between the electrodes to be connected by removing the base material 1 as necessary and, for example, by applying heat and pressure, the conductive particles 5 , And then comes into contact with the electrode and deforms, enabling connection of both circuits. The step (6) is performed as needed after the step (5), and includes the substrate 1 'and the adhesive layer 2'.
And a laminated adhesive film. In this case, the conductive particles can be fixed also from the upper part, so that the conductive particles hardly fall off, and since both surfaces are covered with the base materials 1 and 1 ', it is effective to prevent the adhesion of dust. The conductive particles 5 may be in a state in which the conductive particles are not buried in the adhesive and the conductive particles are exposed and protrude from the adhesive surface.
【0027】図3は本発明になるほかの実施例を示すも
のである。図3(a)は、接着剤層2の一部をエキシマ
レーザーでアブレーションし、浅い孔を形成後、粒子5
を配設したものである。浅い穴でも導電粒子を固定でき
れば本発明の実施が可能である。図3(b)は、接着剤
層2の厚み方向に貫通孔を形成し重ね合わせたものであ
る。エキシマレーザーによるため側壁が精密に作製でき
るので、導電粒子5の高密度充填が可能となり、また導
電粒子が接着面から突出して形成できるので接続抵抗が
低いことや、導電粒子を着色することにより位置合わせ
が容易である等の特徴を有する。FIG. 3 shows another embodiment according to the present invention. FIG. 3A shows that a part of the adhesive layer 2 is ablated by an excimer laser to form a shallow hole, and then the particles 5 are formed.
Is arranged. The present invention can be implemented as long as the conductive particles can be fixed even in a shallow hole. FIG. 3B shows a structure in which through-holes are formed in the thickness direction of the adhesive layer 2 and overlapped. Since the excimer laser is used, the sidewalls can be manufactured precisely, so that the conductive particles 5 can be densely filled. In addition, since the conductive particles can be formed so as to protrude from the bonding surface, the connection resistance is low, and the position is improved by coloring the conductive particles. It has features such as easy matching.
【0028】[0028]
【作用】本発明によれば、接着剤上の必要部に貫通孔を
有するマスクを密着できるので、マスクは接着剤により
固定され位置ずれを起こさず正確な孔あけが可能とな
る。マスクはエキシマレーザーを遮蔽可能な材質とする
ことで、貫通孔のみに照射が可能となる。貫通孔より接
着剤面に到達したエキシマレーザーにより接着剤をアブ
レーションして高精度に除去することが可能となる。こ
のときエキシマレーザー装置は、ビーム径が例えば約1
×2cm2と比較的大きいので広面積への照射が可能で
あり、繰り返し数も1から数100Hzと連続可変でき
るため、数秒の照射で必要部のみに所望の深さの孔を形
成できる。また、ビームを絞り込むことでマスクの貫通
孔面積の一部分のみをアブレーションできるので、マス
ク精度の限界より小面積の孔を設けることもできる。そ
の後孔部に導電粒子を配設することで、接着剤層の必要
部のみに導電粒子を配置した接続部材を容易に製造する
ことが可能となる。本発明になる接続部材は必要部のみ
に導電粒子を配置することで、半導体チップ及び/又は
回路上へのバンプ形成の有無にかかわらず適用可能であ
り、フィルム状であることから無溶剤下の清浄雰囲気中
での接続が可能となる。According to the present invention, a mask having a through-hole can be adhered to a necessary portion on the adhesive, so that the mask is fixed by the adhesive and accurate drilling can be performed without causing displacement. The mask is made of a material capable of blocking the excimer laser, so that only the through holes can be irradiated. The adhesive can be ablated with an excimer laser that has reached the adhesive surface from the through-hole, and can be removed with high precision. At this time, the excimer laser device has a beam diameter of about 1 for example.
Since it is relatively large as × 2 cm 2, it is possible to irradiate a wide area, and the number of repetitions can be continuously varied from 1 to several 100 Hz. Also, by narrowing the beam, only a part of the through hole area of the mask can be ablated, so that a hole having an area smaller than the limit of the mask accuracy can be provided. Then, by disposing the conductive particles in the hole, it is possible to easily manufacture a connection member in which the conductive particles are disposed only in a necessary portion of the adhesive layer. The connection member according to the present invention can be applied regardless of the presence or absence of bump formation on a semiconductor chip and / or a circuit by arranging conductive particles only in a necessary portion. Connection in a clean atmosphere becomes possible.
【0029】[0029]
【実施例】以下、本発明を実施例に基づいて更に詳細に
説明するが、本発明はこれに限定されるものではない。 実施例1 図1において、ポリテトラフルオロエチレン製フィルム
を基材1に使用し、この基材1上にエポキシ系接着剤を
主成分にした絶縁性接着剤を塗布し、厚さ約20μmの
絶縁性の接着剤層2を設けた。次に、接続するテスト用
ICチップの電極と同じ配列に、直径80μmの貫通孔
3を設けた厚さ30μmのステンレス製メタルマスク4
を絶縁性接着剤層2に密着させた。密着にはゴムロール
を使用したラミネーターを用い、メタルマスク4と接着
剤2間の浮きを極力防止した。次にこのメタルマスク4
の面に波長248nmのエキシマレーザーを照射し、接
着剤2に15μm程の深さをもった孔を設けた。次に、
ポリスチレンの高分子核材の表面にAuの金属薄層を持
った変形性の導電粒子5(平均粒系10μm)をメタル
マスク4の上に散布した後、ゴム製のスキージかブラシ
を用いてメタルマスク4の貫通孔3に導電粒子5を押し
入れるとともに、余剰の導電粒子5をメタルマスク4上
から取り除いた。次にメタルマスク4を絶縁性接着剤2
から剥離し、所望の接続部材を得た。EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. Example 1 In FIG. 1, a polytetrafluoroethylene film was used as a base material 1 and an insulating adhesive mainly composed of an epoxy-based adhesive was applied on the base material 1 to form an insulating film having a thickness of about 20 μm. Adhesive layer 2 was provided. Next, a 30 μm thick stainless steel metal mask 4 having a through hole 3 having a diameter of 80 μm in the same arrangement as the electrodes of the test IC chip to be connected.
Was adhered to the insulating adhesive layer 2. A laminator using a rubber roll was used for the adhesion, and floating between the metal mask 4 and the adhesive 2 was prevented as much as possible. Next, this metal mask 4
Was irradiated with an excimer laser having a wavelength of 248 nm, and a hole having a depth of about 15 μm was formed in the adhesive 2. next,
After the deformable conductive particles 5 (average particle size: 10 μm) having a thin metal layer of Au on the surface of a polystyrene high molecular core material are sprayed on the metal mask 4, the metal is spread using a rubber squeegee or brush. The conductive particles 5 were pushed into the through holes 3 of the mask 4, and excess conductive particles 5 were removed from the metal mask 4. Next, the metal mask 4 is applied to the insulating adhesive 2.
To obtain a desired connection member.
【0030】実施例2 図1(5)に示すようにポリテトラフルオロエチレン製
フィルムの基材1′上にエポキシ系接着剤を主成分にし
た絶縁性接着剤2′を塗布し、厚さ約10μmの絶縁性
接着剤2′の層を設け、この絶縁性接着剤2′層を前記
実施例1に示した接続部材の絶縁性接着剤層2に張り合
わせて接続部材を得た。Example 2 As shown in FIG. 1 (5), an insulating adhesive 2 'containing an epoxy-based adhesive as a main component was applied onto a substrate 1' of a polytetrafluoroethylene film, and the thickness was about A 10 μm layer of the insulating adhesive 2 ′ was provided, and the insulating adhesive 2 ′ layer was adhered to the insulating adhesive layer 2 of the connecting member shown in Example 1 to obtain a connecting member.
【0031】実施例3 実施例1に示した接続部材において、導電粒子5の代り
に導電粒子5の表面にコートマイザー(フロイント産業
(株)製)を用いて厚さ20μmのアクリル樹脂6の層
を設けた導電粒子を用いた他は同様にして接続部材を得
た。Example 3 In the connection member shown in Example 1, a layer of an acrylic resin 6 having a thickness of 20 μm was formed on the surface of the conductive particles 5 by using a coatmizer (manufactured by Freund Corporation) instead of the conductive particles 5. A connection member was obtained in the same manner except that the conductive particles provided with were used.
【0032】実施例4 実施例1に示した2枚の接続部材を導電粒子の配列が一
致するように、接着剤層を対向させて張り合わせ接続部
材を得た。Example 4 A connection member was obtained by laminating the two connection members shown in Example 1 with the adhesive layers facing each other so that the arrangement of the conductive particles was the same.
【0033】前記実施例1〜4の接続部材を用いて電極
径80μm、電極間距離40μmのバンプが配列したテ
スト用ICと同様の配列のITO電極をもったガラス基
板とを接続し、接続抵抗と隣接する電極間の絶縁抵抗を
測定した結果を下表に示す。接続抵抗は60箇所の電極
についての平均値、絶縁抵抗は56箇所の測定値の最低
値を示した。Using the connection members of Examples 1 to 4, a test IC in which bumps having an electrode diameter of 80 μm and a distance between electrodes of 40 μm were arranged was connected to a glass substrate having ITO electrodes arranged in the same manner as the test IC, and the connection resistance was measured. The results of measuring the insulation resistance between adjacent electrodes are shown in the table below. The connection resistance indicated the average value of the electrodes at 60 points, and the insulation resistance indicated the minimum value of the measured values at 56 points.
【0034】[0034]
【表1】 [Table 1]
【0035】[0035]
【発明の効果】本発明によれば、電気的接続を必要とす
る部分に導電粒子を局在させ、絶縁性の必要部は絶縁性
接着剤を用いることから、微小部分の接続が簡単に得ら
れる接続部材を比較的容易に製造することが可能となっ
た。According to the present invention, conductive particles are localized in portions requiring electrical connection, and insulating portions are used with an insulating adhesive, so that minute portions can be easily connected. It is possible to relatively easily manufacture the connecting member to be manufactured.
【図1】本発明になる接続部材の製造方法を示す断面模
式図。FIG. 1 is a schematic sectional view showing a method for manufacturing a connection member according to the present invention.
【図2】導電粒子の状態を示す断面模式図。FIG. 2 is a schematic cross-sectional view showing a state of conductive particles.
【図3】本発明になる接続部材のほかの実施例を示す断
面模式図。FIG. 3 is a schematic cross-sectional view showing another embodiment of the connection member according to the present invention.
1 基材 2 接着剤層 3 貫通孔 4 マスク 5 導電粒子 6 樹脂層 DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3 Through-hole 4 Mask 5 Conductive particle 6 Resin layer
フロントページの続き (72)発明者 太田 共久 茨城県下館市大字小川1500番地 日立化 成工業株式会社 下館研究所内 (72)発明者 山口 豊 茨城県下館市大字小川1500番地 日立化 成工業株式会社 下館研究所内 (72)発明者 伊藤 達夫 茨城県下館市大字五所宮1150番地 日立 化成工業株式会社 五所宮工場内 (72)発明者 福富 直樹 茨城県つくば和台48番地 日立化成工業 株式会社 筑波開発研究所内 (72)発明者 坪松 良明 茨城県つくば和台48番地 日立化成工業 株式会社 筑波開発研究所内 (56)参考文献 特開 昭61−187393(JP,A) 特開 昭61−239576(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01R 11/01 H01R 43/00 Continued on the front page (72) Inventor Kyohisa Ota 1500 Oji Ogawa, Shimodate City, Ibaraki Pref.Hitachi Kasei Kogyo Co., Ltd. Inside the Shimodate Research Laboratory (72) Inventor Tatsuo Ito 1150 Goshomiya, Oaza, Shimodate, Ibaraki Prefecture Inside the Goshomiya Plant, Hitachi Chemical Co., Ltd. (72) Naoki Fukutomi 48 Tsukuba Wadai, Ibaraki Prefecture In-house (72) Inventor Yoshiaki Tsubomatsu 48 Tsukuba-wadai, Ibaraki Pref., Tsukuba Development Laboratory, Hitachi Chemical Co., Ltd. (56) References JP-A-61-187393 (JP, A) JP-A-61-239576 (JP, A) (58) Field surveyed (Int. Cl. 6 , DB name) H01R 11/01 H01R 43/00
Claims (1)
縁性接着剤層を形成する工程、 (2)必要部に貫通孔を有するマスクを前記接着剤層の
表面に密着させる工程、 (3)マスクの貫通孔からエキシマレーザ光を照射して
前記接着剤層の厚み方向の少なくとも一部に孔を設ける
工程、 (4)マスクの貫通孔から導電粒子を孔内に配設する工
程及び (5)マスクを前記接着剤層の表面から除去する工程。1. A method for manufacturing a connecting member comprising the following steps. (1) a step of forming an insulating adhesive layer made of an epoxy-based adhesive on a peelable substrate; (2) a mask having a through-hole at a necessary portion is provided on the surface of the adhesive layer (3) a step of irradiating an excimer laser beam from a through hole of a mask to form a hole in at least a part of the adhesive layer in a thickness direction; and (4) a step of introducing conductive particles from the through hole of the mask into the hole. Disposing and (5) removing the mask from the surface of the adhesive layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3127237A JP2890890B2 (en) | 1991-05-30 | 1991-05-30 | Manufacturing method of connecting member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3127237A JP2890890B2 (en) | 1991-05-30 | 1991-05-30 | Manufacturing method of connecting member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04351863A JPH04351863A (en) | 1992-12-07 |
JP2890890B2 true JP2890890B2 (en) | 1999-05-17 |
Family
ID=14955108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3127237A Expired - Lifetime JP2890890B2 (en) | 1991-05-30 | 1991-05-30 | Manufacturing method of connecting member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2890890B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1448034A1 (en) | 1996-12-27 | 2004-08-18 | Matsushita Electric Industrial Co., Ltd. | Method and device for mounting electronic component on circuit board |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2553491B2 (en) * | 1985-02-15 | 1996-11-13 | カシオ計算機株式会社 | How to join electronic components |
JPS61239576A (en) * | 1985-04-16 | 1986-10-24 | シチズン時計株式会社 | Manufacture of connector |
-
1991
- 1991-05-30 JP JP3127237A patent/JP2890890B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04351863A (en) | 1992-12-07 |
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