JP2875437B2 - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a method for manufacturing the same, and more particularly, to a semiconductor light emitting device capable of emitting multicolor light and capable of manufacturing a flat panel display with high luminance and high definition, and its manufacture. About the method.

[0002]

2. Description of the Related Art In recent years, development of thin and lightweight image display devices has been active. In particular, liquid crystal display devices (LCDs) are widely used because they consume less power and can be made compact. However, it has disadvantages such as difficulty in seeing when the surroundings are bright.

On the other hand, light emitting diodes (LEDs) are easy to see even in bright places, and are widely used in display devices such as various display lamps. Green and yellow-green LEDs are elements using GaP doped with N in the light-emitting part, yellow LEDs are elements using GaAsP doped with N in the light-emitting part, and red LEDs are Zn-O in the light-emitting part. There is an element using GaAsP or AlGaAs doped with, and each has been commercialized.

[0004] However, the above LED has the following disadvantages. That is, GaP and GaAsP are indirect transition type semiconductors, and the concentration of the emission center is low because the emission center is formed by adding impurities. Therefore, when the current is increased, the light emission output is immediately saturated, and high luminance cannot be obtained. Al _x Ga _{1 -x} As (0 ≦ x ≦ 1)
Is used as a high-brightness LED such as a stop lamp, but when the Al composition ratio x exceeds 0.45, an indirect transition occurs. Therefore, the efficiency decreases as the Al composition ratio increases, that is, as the emission wavelength decreases. Further, blue light emission cannot be obtained with GaP, GaAsP, and AlGaAs-based semiconductors.

[0005] As a semiconductor material which is a direct transition type in the entire wavelength region, research on InGaN-based materials has been advanced. I
In nGaN, red to ultraviolet light emission can be obtained by changing the group III composition as shown in FIG. In particular, research on devices using a sapphire substrate and GaN has been advanced. For example, Appl.Phys.Lett.48 (1986) p.3
As shown in FIG. 53, A between the sapphire substrate and GaN
By introducing a buffer layer made of 1N, a good GaN crystal can be obtained. Also, Jpn.J.Appl.Phys.30 (1
991) As shown in L1705, sapphire substrate and GaN
By introducing a buffer layer made of GaN grown at a low temperature between these steps, a good GaN crystal can be obtained. further,
As shown in Jpn. J. Appl. Phys. 28 (1989) L2112, M
By irradiating g-doped GaN with an electron beam, p-type G
aN was obtained, and a high-luminance blue LED was obtained.

Meanwhile, in order to increase the definition of a display, attempts have been made to increase the pixel density. For example, as shown in FIG. 8, a light emitting device including a plurality of LEDs that emit different wavelengths has been commercialized.

[0007]

However, in the above LED, since a plurality of elements are molded into one, integration is limited. In order to further promote integration, devices that can emit different wavelengths with one device are required.

An object of the present invention is to solve the above-mentioned problems by flattening InGaN layers having different compositions while relaxing lattice strain, enabling multicolor light emission, and having high luminance and high definition. It is an object of the present invention to provide a semiconductor light emitting device capable of manufacturing a display and a method for manufacturing the same.

[0009]

The semiconductor light-emitting device of the present invention solving the problem to means for the] has, on a substrate, a semiconductor layer made of _{In x Ga 1-x N (} 0 ≦ x ≦ 1) is formed product layer, the semiconductor layer pn Joined compound
A semiconductor light-emitting element having a number of light-emitting portions;
A buffer layer interposed between the light emitting parts and a Mg-doped semiconductor
And the Mg-doped semiconductor layer comprises the Mg-doped semiconductor layer.
It is exposed by the lack of a portion of the semiconductor layer the semiconductor layer formed on the, p-type territory is exposed portion constituting the light emitting portion
And a high-resistance region which is a non-exposed portion, whereby the above-described object can be achieved. Another of the present invention
In an aspect, the semiconductor light emitting device of the present invention, on a substrate,
Semiconductor layer composed of In _x Ga _1-x N (0 ≦ x ≦ 1) is a stacked type
And the semiconductor layer has a plurality of pn junctions.
Semiconductor light emitting device, wherein between the plurality of light emitting units
A buffer layer is interposed, and the substrate
N-type half constituting a pn junction in the light emitting portion closest to
The conductor layer forms an n-type pn junction in the other light emitting portion.
Thicker than the semiconductor layer. In another aspect of the invention,
A semiconductor layer made of In _x Ga _1-x N (0 ≦ x ≦ 1) on a plate
Are formed in layers, and the semiconductor layer is formed with a plurality of pn junctions.
A semiconductor light emitting device having an optical part, wherein a plurality of said light emitting
A buffer layer is interposed between the portions, and between the plurality of light emitting portions,
The x value of the In _x Ga ₁ -xN semiconductor layer is smaller as the substrate is closer to the substrate.
Please.

[0010] The buffer layer may be composed of an AlN layer and / or a GaN layer.

The buffer layer may be formed by alternately laminating layers of AlN or GaN and layers of In _y Ga _{1 -yN} (0 ≦ y ≦ 1). Above buffer
A plurality of layers, each of which has a buffer layer, such as an AlN layer.
Or a GaN layer and In _y Ga _1-y N (0 ≦ y ≦
1) layers are alternately laminated, and a plurality of
The layer closer to the substrate between the layer layers is the In _y Ga _1-y N (0 ≦
A configuration in which y ≦ 1) of the layer is small may be used.

According to the method of manufacturing a semiconductor light emitting device of the present invention, a semiconductor layer made of In _x Ga ₁ -xN (0 ≦ x ≦ 1) is formed on a substrate.
A plurality of calling but formed product layer, which is a pn junction with the semiconductor layer
Has a light unit, a buffer layer between a plurality of the light emitting portion is interposed, above the light emitting portion is exposed by the lack of a portion of the semiconductor layer formed on the light emitting portion a method of manufacturing a semiconductor light emitting device, the exposed laminating a plurality of the semiconductor layer made of the in _x Ga _1-x N, the portion by dropping a portion of the semiconductor layer becomes the light emitting portion The step of causing
Irradiating the exposed portion with charged particles to form the pn-junction light emitting portion, thereby achieving the above object.

[0013]

According to the present invention, In _x Ga _1-x N (0 ≦ x ≦
1) Since the buffer layer having the AlN layer or the GaN layer is provided between the light emitting units formed of the semiconductor layers, lattice distortion due to a difference in lattice constant between the light emitting units can be reduced. Since InGaN is a direct transition semiconductor, light emission with high luminance and high efficiency can be obtained.

A pn junction is formed in each semiconductor layer by exposing a light emitting portion of each semiconductor layer and irradiating the exposed portion of the light emitting portion with charged particles. Therefore, light emission can be separated and controlled.

[0015]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 is a sectional view showing a semiconductor light emitting device according to a first embodiment of the present invention.

In this semiconductor device, a buffer layer 2 made of AlN or GaN, a Si-doped n-In _x Ga _{1 -x} N layer 3, and a Mg-doped high-resistance In _x Ga _{1 are formed} on a (0001) plane of a sapphire substrate _{1. -x} n layer 4, AlN or a buffer layer 2 made of GaN, Si-doped n-In _x Ga _1-x n layer 5, Mg-doped high-resistance In _x Ga _1-x n layer 6, AlN or a buffer layer made of GaN 2. Si-doped n-In _x
Ga _1-x N layer 7 and Mg-doped high resistance In _x Ga _1-x N
The layer 8 is formed by lamination. Buffer layer 2 of AlN or GaN, Si-doped n-In _x Ga _{1 -x} N layer 5, Mg-doped high-resistance In _x Ga _{1 -x} N layer 6, buffer layer 2 of AlN or GaN, Si-doped n -InN
The layer 7 and the Mg-doped high-resistance InN layer 8 are composed of the Mg-doped high-resistance In _x Ga ₁ -xN layer 4 and the Mg _- doped high-resistance InN
_The xGa1 _-xN layer 6 is partially removed so as to be exposed. A part of the Mg-doped high resistance In _x Ga _{1 -x} N layer 8, M
The exposed portions of the g-doped high-resistance In _x Ga _1-x N layer 4 and the Mg-doped high-resistance In _x Ga _1-x N layer 6 are p-type regions 4a, 6a.
a, 8a, p-type Al electrodes 10, 11, 12 are provided on the p-type regions 4a, 6a, 8a, and an n-type Al electrode is provided on the side where the semiconductor is not exposed. 9 are provided.

A semiconductor device according to a first embodiment will be described with reference to FIGS.

First, as shown in FIG. 1, the sapphire substrate 1 was thermally cleaned at a substrate temperature of 1150.degree.
Thereafter, the substrate temperature was lowered to 600 ° C., and the sapphire substrate 1
A buffer layer 2 made of AlN or GaN is grown on the (0001) plane, and then the substrate temperature is increased to 800 ° C., and the Si-doped n-In _x Ga ₁ -xN layer 3 and the Mg-doped high-resistance In _An xGa1 _-xN layer 4 was grown. Next, the substrate temperature is lowered to 600 ° C., and a buffer layer 2 made of AlN or GaN is grown.
And the Si-doped n-In _x Ga _1-x N layer 5 and Mg
A doped high resistance In _x Ga ₁ -xN layer 6 was grown. Further, the substrate temperature is lowered to 600 ° C., and a buffer layer 2 made of AlN or GaN is grown.
The temperature was raised to 00 ° C., and a Si-doped n-In _x Ga _1-x N layer 7 and a Mg-doped high-resistance In _x Ga _1-x N layer 8 were grown.

As a method of growing each of the semiconductor layers, MO
CVD method (organic metal compound vapor phase epitaxy), gas source M
The BE method (molecular beam epitaxy method) is preferred. The following compounds can be used as a source and a dopant material of the atoms forming each semiconductor layer.

Ga source: trimethylgallium (TM
G) or triethylgallium (TEG), etc. Al source: trimethylaluminum (TMA) or triethylaluminum (TEA), etc. In source: trimethylindium (TMI) or triethylindium (TEI), N source: ammonia (NH ₃ ) And other dopant materials: silane (SiH ₄ ) (for n-type dopant) and biscyclopentadienyl magnesium (Cp ₂ Mg) (for p-type dopant).

Next, as shown in FIG. 2, the buffer layer 2 made of AlN or GaN, the Si-doped n-In _x Ga _{1 -x} N layer 5, the Mg-doped high resistance In _x Ga ₁ are formed by dry etching or selective etching. _-x N layer 6, buffer layer 2 made of AlN or GaN, Si-doped n-In _x
Ga _1-x N layer 7 and Mg-doped high resistance In _x Ga _1-x N
Layer 8 is composed of Mg-doped high resistance In _x Ga _{1 -x} N layer 4 and M
The g-doped high resistance In _x Ga ₁ -xN layer 6 was partially removed so as to be exposed.

Further, Mg-doped high resistance In _x Ga ₁ -xN
In a part of the layer 8, the exposed portions of the Mg-doped high-resistance In _x Ga _1-x N layer 4 and the Mg-doped high-resistance In _x Ga _1-x N layer 6,
An electron beam was irradiated so that the electron reached a depth of about 0.5 μm to form p-type regions 4a, 6a, and 8a.

Subsequently, as shown in FIG.
a, 6a, 8a, 500 μmφ p-type Al electrodes 10, 11, 12
On the side where the semiconductor layer is not exposed,
A type Al electrode 9 is deposited. After each Al electrode was formed, the chip was divided into chips by dicing to obtain semiconductor light emitting devices.

In order to realize a multi-wavelength light emitting device using the direct transition type InGaN as described above, it is necessary to continuously grow semiconductor layers having different Group III compositions. However, as shown in FIG. 8, since there is a difference in the lattice constant, a lattice distortion occurs in the case of continuous growth. Lattice distortion induces lattice defects, and pits (holes) and cracks (cracks) lower luminous efficiency. Therefore, the semiconductor device of the present invention has a buffer layer made of AlN or GaN interposed between the semiconductor layers. The buffer layer can reduce the lattice strain.

When each semiconductor layer is continuously grown,
An element structure for separating and controlling light emission of each layer is required. Therefore, in the method for manufacturing a semiconductor light emitting device of the present invention,
An etching step of exposing a lower semiconductor layer by removing a part of the upper semiconductor layer; and irradiating the exposed part with charged particles. For this reason, the light emitting portions of the respective semiconductor layers are formed separately and independently, so that the light emission can be separated and controlled.

Details of each semiconductor buffer layer are as follows.

AlN buffer layer 2: 500 Å thick Si-doped n-In _x Ga ₁ -xN layer 3: In _0.3 Ga
_0.7 N, thickness 2 μm Mg-doped high resistance In _x Ga ₁ -xN layer 4: In _0.3 Ga _0.7
N, 0.5 μm thick Si-doped n-In _x Ga _1-x N layer 5: In _0.7 Ga
_0.3 N, 1 μm thick Mg-doped high resistance In _x Ga ₁ -xN layer 6: In _0.7 Ga _0.3
N, thickness 0.5 μm Si-doped n-In _x Ga ₁ -xN layer 7: InN, thickness 1 μ
mm Mg-doped high-resistance In _x Ga ₁ -xN layer 8: InN, 0.5 μm thickness In each semiconductor layer, lattice defects such as pits and cracks were not observed.

In the semiconductor light emitting device of this embodiment,
High-efficiency, high-luminance light emission of red, green, and blue was obtained.

(Embodiment 2) FIG. 4A is a cross-sectional view showing a state before an exposed portion of a semiconductor light emitting device according to Embodiment 2 of the present invention is formed, and FIG. FIG. 4 is a cross-sectional view showing a buffer layer of FIG.

The buffer layer 40 of the semiconductor light emitting device of the second embodiment
a, 40b, and 40c have a 20 angstrom AlN layer 41;
20 Å In _y Ga _1-y N (0 ≦ y ≦ 1) layer
42 is a multilayer body (150 cycles) formed by alternately laminating 42.
In this embodiment, the value of y is 0.3 in the buffer layer 40a,
The value is 0.7 for the buffer layer 40b and 1.0 for the buffer layer 40c.

In this semiconductor light emitting device, an AlN buffer layer 41 and In _y Ga _{1 -y} N (0 ≦ y ≦
1) Except for alternately laminating the buffer layers 42, the structure was the same as that of Example 1 and was formed by the same growth method.

No lattice defect such as pits or cracks was observed in each semiconductor layer.

Since this buffer layer has a superlattice structure, the effect of alleviating lattice distortion is higher than that of the buffer layer of the first embodiment, and impurities which are not removed by thermal cleaning or the like remain on the substrate. Even so, since the impurities are trapped in the superlattice, the adverse effects can be eliminated.

In the semiconductor light emitting device of this embodiment,
High-efficiency, high-luminance light emission of red, green, and blue was obtained.

(Embodiment 3) FIG. 5A is a sectional view showing a state before an exposed portion of a semiconductor light emitting device according to a third embodiment of the present invention is formed, and FIG. FIG. 4 is a cross-sectional view showing a buffer layer of FIG.

The buffer layer 50 of the semiconductor light emitting device of the third embodiment
a, 50b, and 50c are buffer layers 40a, 40b, and 40 of the semiconductor light emitting device of Example 2 except that the thickness of the InGaN layer is changed.
This is the same configuration as c. Specifically, it has the following configuration. In _y Ga _1-y N (0 ≦
y ≦ 1) layer 52 is 20 angstroms, In _y Ga _1-y N (0 ≦ y ≦ 1) layer 53 on AlN layer 51 is 30 angstroms, and AlN layer 51 on it is 30 angstroms. The upper In _y Ga _1-y N (0 ≦ y ≦ 1) layer 54 is 40 Å, and the In _y on the AlN layer 51 is
The Ga _1-y N (0 ≦ y ≦ 1) layer 55 is 90 angstroms, and the In _y Ga _1-y N (0
≦ y ≦ 1) layer 56, as of 100 Å, AlN layer 51 and the In _y Ga _1-y N layer (0 ≦ y ≦ 1) and formed by laminating.

This semiconductor light emitting device has an AlN layer 51 and an In _x Ga ₁ -xN (0 ≦ x ≦ 1) layer 52 as buffer layers.
55, 56 were alternately laminated, and the same as in Example 1 was prepared.

In each semiconductor layer, no lattice defects such as pits and cracks were found.

Since this buffer layer has a superlattice structure similarly to the second embodiment, the buffer layer of the first embodiment is
Further, the effect of alleviating lattice distortion is high.

In the semiconductor light emitting device of this embodiment,
High-efficiency, high-luminance light emission of red, green, and blue was obtained.

(Embodiment 4) FIG. 6A is a cross-sectional view showing a state before an exposed portion of a semiconductor light emitting device according to Embodiment 4 of the present invention is formed, and FIG. FIG. 4 is a cross-sectional view showing a buffer layer of FIG.

The buffer layer 60 of the semiconductor light emitting device of the fourth embodiment
Each of a, 60b, and 60c is formed by stacking a layer 61 made of AlN or GaN, an AlN layer 62, and an In _y Ga _1-y N (0 ≦ y ≦ 1) layer 63. In this embodiment, the value of y is 0.3 in the buffer layer 40a, 0.7 in the buffer layer 40b,
In c, it is set to 1.0.

In this semiconductor light emitting device, an AlN layer 61, an AlN layer 62 and In _y Ga _1-y N are used as buffer layers.
(0 ≦ y ≦ 1) It was prepared in the same manner as in Example 1 except that layers 63 were alternately laminated.

In each semiconductor layer, no lattice defects such as pits and cracks were observed.

Since this buffer layer has a superlattice structure similarly to the second embodiment,
Further, the effect of alleviating lattice distortion is high.

In the semiconductor light emitting device of this embodiment,
High-efficiency, high-luminance light emission of red, green, and blue was obtained.

In the above embodiment, the semiconductor light emitting devices of the three primary colors of red, green and blue have been described.
By changing the composition of the group element, light emission in the red to ultraviolet region can be obtained. For example, when x = 0.75, a yellow semiconductor light emitting element is obtained, when x = 0.9, an orange semiconductor light emitting element is obtained, and when x = 0, an ultraviolet semiconductor light emitting element is obtained.

Although a sapphire substrate was used as the substrate, a semi-insulating ZnO substrate or SiC
A substrate or the like can be used.

[0050]

As is apparent from the above description, according to the present invention, direct transition type InGaN having a different composition can be stacked while alleviating lattice distortion, so that high brightness and high efficiency multicolor light emission can be obtained. Semiconductor light emitting device can be provided. Since this semiconductor light emitting device has a plurality of light emitting portions on one substrate, it is possible to realize a high-definition, high-luminance, high-efficiency, and high-definition flat panel display capable of emitting multiple colors.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a manufacturing process of a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a manufacturing process of the semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a semiconductor light emitting device according to Example 1 of the present invention.

FIG. 4A is a cross-sectional view illustrating a state before an exposed portion of a semiconductor light emitting device according to a second embodiment of the present invention is formed;
(B) is a sectional view showing a buffer layer of the semiconductor light emitting device of Example 2 of the present invention.

FIG. 5A is a cross-sectional view illustrating a state before an exposed portion of a semiconductor light emitting device according to a third embodiment of the present invention is formed;
(B) is a sectional view showing a buffer layer of the semiconductor light emitting device of Example 3 of the present invention.

FIG. 6A is a cross-sectional view illustrating a state before an exposed portion of a semiconductor light emitting device according to a fourth embodiment of the present invention is formed;
(B) is a sectional view showing a buffer layer of the semiconductor light emitting device of Example 4 of the present invention.

FIG. 7 is a perspective view showing a conventional semiconductor light emitting device.

FIG. 8 is a diagram showing a relationship between a composition of a group III element of In _x Ga ₁ -xN and a lattice constant, and a relationship with an energy gap.

[Explanation of symbols]

Reference Signs List 1 sapphire substrate 2 buffer layer made of AlN or GaN 3 Si-doped n-In _0.3 Ga _0.7 N layer 4 Mg-doped high resistance In _0.3 Ga _0.7 N layer 5 Si-doped n-In _0.7 Ga _0.3 N layer 6 Mg-doped high resistance In _0.7 Ga _0.3 N layer 7 Si-doped n-InN layer 8 Mg-doped high-resistance InN layer 4 a, 6 a, 8 a p-type region 10, 11, 12 p-type Al electrode 9 n-type Al electrode 40 a, 40 b, 40 c AlN layer / In _y Ga _1-y N (0 ≦ y
≦ 1) buffer layer 50a, 50b, 50c composed of a periodic multilayer body of AlN layers / In _y Ga _1-y N (0 ≦ y)
≦ 1) A buffer layer 60a, 60b, 60c composed of an irregular multilayer body composed of a layer and a layer composed of AlN or GaN.
Buffer layers 41, 51, 61, 63 composed of a periodic multilayer of 1N layers / In _y Ga _1-y N (0 ≦ y ≦ 1) layers AlN buffer layers 42, 52, 53, 54, 55, 56, 62 In _y Ga _1-y N (0 ≦ y
≦ 1) Buffer layer

Continued on the front page (72) Inventor Hiroyuki Hosoha 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Ken Obayashi 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Sharp Corporation (72 Inventor Toshio Hata 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Naohiro Suyama 22-22 Nagaike-cho, Abeno-ku, Osaka-shi Osaka Prefecture Inside Sharp Corporation (56) References 3-38073 (JP, A) JP-A-3-203388 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 33/00

Claims (7)

(57) [Claims] To 1. A _{substrate, In x Ga 1-x N} (0 ≦ x ≦ 1)
Made of a semiconductor layer is formed product layer, the semiconductor layer pn junction
A semiconductor light emitting device having a plurality of combined light emitting portions.
A buffer layer interposed between the plurality of light emitting units;
g-doped semiconductor layer, and the Mg-doped semiconductor layer has
An exposed portion which is exposed due to a lack of a part of the semiconductor layer formed on the Mg-doped semiconductor layer and constitutes the light emitting portion
And a high resistance region which is an unexposed portion.
To, the semiconductor light emitting element. 2. An In _x Ga _{1 -x} N (0 ≦ x ≦ 1) on a substrate.
A semiconductor layer composed of
A semiconductor light emitting device having a plurality of combined light emitting portions.
A buffer layer is interposed between the plurality of light emitting units,
Between the number of the light emitting portions, the light emitting portion closest to the substrate.
An n-type semiconductor layer forming a pn junction is
Half thicker than the n-type semiconductor layer forming the pn junction
Conductive light emitting element. 3. An In _x Ga _{1 -x} N (0 ≦ x ≦ 1) on a substrate.
A semiconductor layer composed of
A semiconductor light emitting device having a plurality of combined light emitting portions.
A buffer layer is interposed between the plurality of light emitting units,
Among the number of the light emitting parts, the one closer to the substrate is In _x Ga ₁ -xN half.
A semiconductor light emitting device in which the value of x of the conductor layer is small. Wherein said buffer layer is made of AlN layer and / or the GaN layer, the semiconductor light-emitting device according to any one of claims 1 to 3. 5. The method according to claim 1, wherein said buffer layer is made of AlN or GaN.
A layer comprising _{the, In y Ga 1-y N} (0 ≦ y ≦ 1) layer and are stacked alternately formed, the semiconductor light-emitting device according to any one of claims 1 to 3. 6. A buffer having a plurality of the buffer layers;
Each of the layers is a layer comprising an AlN layer or a GaN layer
And In _y Ga _1-y N (0 ≦ y ≦ 1) layers alternately formed
And between the plurality of buffer layers and close to the substrate.
Is the In _y Ga _1-y The value of y in the N (0 ≦ y ≦ 1) layer is small
The semiconductor light emitting device according to claim 3. 7. A _{substrate, In x Ga 1-x N} (0 ≦ x ≦ 1)
Made of a semiconductor layer is formed product layer, the semiconductor layer pn junction
A plurality of light emitting portions which are engaged, Ba <br/> Ffa layer is interposed between a plurality of the light emitting portion, above the light emitting portion, the semiconductor layer formed on the light emitting portion missing method for manufacturing a semiconductor light-emitting device is exposed by a part of the missing laminating a plurality of the semiconductor layer made of the in _x Ga _1-x N, a portion of the semiconductor layer of exposing a so in part to be the light emitting portion is, by irradiating a charged particle in the exposed out portion and forming a light emitting portion which is pn junction, a method of manufacturing a semiconductor light-emitting device.