KR20130110748A - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same Download PDF

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Publication number
KR20130110748A
KR20130110748A KR1020120032953A KR20120032953A KR20130110748A KR 20130110748 A KR20130110748 A KR 20130110748A KR 1020120032953 A KR1020120032953 A KR 1020120032953A KR 20120032953 A KR20120032953 A KR 20120032953A KR 20130110748 A KR20130110748 A KR 20130110748A
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layer
temperature
barrier layer
quantum well
barrier
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KR1020120032953A
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Korean (ko)
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이성학
이두희
유은경
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일진엘이디(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof prevent the phase separation of a quantum-well layer by forming one part of a barrier layer at the same temperature as the temperature of forming the quantum-well layer. CONSTITUTION: A first semiconductor layer, an active layer, and a second semiconductor layer are successively laminated on a substrate. The active layer is formed by alternatively laminating a quantum-well layer and a barrier layer. The quantum-well layer and one part of the barrier layer in contact with the quantum-well layer are formed at a first temperature (T1). The other part of the barrier layer is formed at a second temperature (T2) higher than the first temperature. The second temperature is maintained at a constant temperature. [Reference numerals] (AA) Temperature; (BB) Time

Description

Light emitting device and method of manufacturing the same

The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly to a light emitting device using a nitride and a method for manufacturing the same.

In general, nitrides such as GaN, AlN, InN, and the like have a high thermal stability and have a direct transition type energy band structure, which has recently attracted much attention as a material for optoelectronic devices. In particular, GaN can be used in high temperature high power devices because the energy bandgap is very large at 3.4 eV at room temperature.

A light emitting device (LED) using nitride generates electrons and holes by using a P-N junction structure of a compound semiconductor, and emits predetermined light by recombination thereof. Such a light emitting device is used in a backlight unit or a lighting device of a display device, and consumes only a few to one tenths of the power of a conventional light bulb or a fluorescent lamp. It is advantageous.

Such a light emitting device is generally composed of an N-type GaN layer, an active layer, and a P-type GaN layer formed on a substrate, and an N-type electrode and a P-type electrode connected to the N-type GaN layer and the P-type GaN layer, respectively. Here, the active layer is a region where electrons and holes are recombined, and is composed of a quantum well layer of InGaN and a barrier layer of GaN. In addition, the emission wavelength emitted from the light emitting diode is determined according to the type of the material forming the active layer.

The active layer may improve the GaN crystalline of the barrier layer by forming the barrier layer at a temperature higher than the temperature at which the quantum well layer is formed. However, phase separation of In of the quantum well layer occurs, thereby causing a defect of the quantum well layer. Such defects lower efficiency and electrical characteristics.

The present invention provides a light emitting device capable of preventing phase separation of a quantum well layer and improving the crystallinity of the barrier layer when forming the barrier layer after forming the quantum well layer and a method of manufacturing the same.

The present invention provides a light emitting device and a method of manufacturing the same, wherein a part of the barrier layer is formed at the same temperature as the quantum well layer and the rest of the barrier layer is formed at a temperature higher than the quantum well layer formation temperature.

In the light emitting device according to the aspect of the present invention, a first semiconductor layer, an active layer, and a second semiconductor layer are stacked on a substrate, and the active layer is formed by stacking a plurality of quantum well layers and barrier layers, and the quantum well layer and the A portion of the barrier layer in contact with the quantum well layer is formed at a first temperature, and the remainder of the barrier layer is formed at a second temperature higher than the first temperature.

The second temperature is maintained at a constant temperature, continuously rises or rises in stages.

The remainder of the barrier layer formed at the second temperature is the same or thicker than the portion of the barrier layer formed at the first temperature.

A method of manufacturing a light emitting device according to another aspect of the present invention includes the steps of forming a first semiconductor layer on a substrate; Forming a quantum well layer on the first semiconductor layer at a first temperature; Forming a portion of the barrier layer at the first temperature on the quantum well layer; Forming a remainder of the barrier layer at a second temperature higher than the first temperature; And forming a second semiconductor layer on the barrier layer.

The quantum well layer and the barrier layer are repeatedly formed a plurality of times.

The second temperature is maintained at a constant temperature, continuously raised or gradually increased.

The remainder of the barrier layer formed at the second temperature is the same or thicker than the portion of the barrier layer formed at the first temperature.

Embodiments of the present invention by stacking a plurality of quantum well layer and the barrier layer to form an active layer, forming a part of the barrier layer at the same temperature as the formation temperature of the quantum well layer, and forms the rest of the barrier layer at a higher temperature . That is, the barrier layer is formed at two different temperatures, wherein the first barrier layer on the quantum well layer is formed at the same temperature as the quantum well layer, and the second barrier layer on the first barrier layer is at a higher temperature than the first barrier layer. Form.

According to the present invention, phase separation of the quantum well layer can be prevented by forming a part of the barrier layer at the same temperature as the formation temperature of the quantum well layer. Therefore, defect generation in the quantum well layer can be suppressed, thereby improving efficiency and electrical characteristics. In addition, by forming the remainder of the barrier layer at a temperature higher than a portion of the barrier layer in contact with the quantum well layer, it is possible to improve the crystallinity of the barrier layer, thereby improving the brightness and electrical properties.

1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view of an active layer of a light emitting device according to an embodiment of the present invention.
3 to 5 are temperature recipe diagrams for forming an active layer according to embodiments of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information. In the drawings, the thickness is enlarged to clearly illustrate the various layers and regions, and the same reference numerals denote the same elements in the drawings.

1 is a cross-sectional view of a light emitting device according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view of an active layer.

1 and 2, a light emitting device according to an exemplary embodiment may include a first semiconductor layer 120, an active layer 130, and a second semiconductor layer 140 sequentially stacked on a substrate 110. And the first electrode 160 formed on the transparent semiconductor layer 150, the second semiconductor layer 140, and the active layer 130 are removed to expose the first semiconductor layer 130, and the upper portion of the transparent electrode 150. It includes a second electrode 170 formed in a predetermined region. In addition, the semiconductor device may further include a buffer layer (not shown) formed between the substrate 110 and the first semiconductor layer 120, and may further include an undoped layer formed between the buffer layer and the first semiconductor layer 120. .

The substrate 110 refers to a conventional wafer for fabricating a light emitting device, and preferably, a material suitable for growing a nitride semiconductor single crystal may be used. For example, the substrate 110 may use any one of Al 2 O 3 , SiC, ZnO, Si, GaAs, GaP, LiAl 2 O 3 , BN, AlN, and GaN.

The first semiconductor layer 120 may be an N-type semiconductor doped with N-type impurities, thereby supplying electrons to the active layer 130. The first semiconductor layer 120 may use a GaN layer doped with N-type impurities, for example, Si. However, the present invention is not limited thereto, and various semiconductor materials are possible. That is, a compound in which nitrides such as GaN, InN, AlN (Group III-V), and such nitrides are mixed at a constant ratio may be used. For example, AlGaN may be used. In addition, the first semiconductor layer 120 may be formed of a single film or a multilayer film. Meanwhile, a buffer layer (not shown) may be formed to alleviate the lattice mismatch between the substrate 110 and the first semiconductor layer 120. The buffer layer can be formed using, for example, AlGaN. In addition, an undoped layer (not shown) may be formed on the buffer layer. The undoped layer may be formed of a layer which is not doped with impurities, for example, an undoped GaN layer.

The active layer 130 has a predetermined band gap and is a region where quantum wells are made to recombine electrons and holes. The active layer 130 may be formed of a multi quantum well structure (MQW), and the multi quantum well structure may be formed by repeatedly stacking a plurality of quantum well layers and barrier layers. For example, the active layer 130 of the multi-quantum well structure may be formed by repeatedly stacking InGaN and GaN. In this case, since the emission wavelength generated by the combination of electrons and holes is changed according to the type of material constituting the active layer 130, it is preferable to adjust the semiconductor material included in the active layer 130 according to the target wavelength. That is, the wavelength of light generated in the active layer 130 may be variously controlled by adjusting the amount of In in the quantum well layer 131. For example, as the In content of the InGaN quantum well layer 131 increases, the band gap becomes smaller and the emission wavelength is increased, thereby emitting light from the ultraviolet region to all visible region such as blue, green, and red. can do. In addition, the emission wavelength may be changed by adjusting the thickness of the quantum well layer 131. For example, when the thickness of the InGaN quantum well layer 131 is increased, the band gap may be reduced to emit light toward the red side. . In addition, white light may be obtained using a multilayer structure of the quantum well layer 131. That is, white light may be obtained as a whole by adjusting the In content differently in at least one layer of the multilayer InGaN quantum well layer 131 to constitute blue light emission, green light emission, and red light emission. Meanwhile, the active layer 130 is formed by removing a region where the first electrode 160 is to be formed.

As shown in FIG. 2, the active layer 130 includes a quantum well layer 131 formed at a first temperature, a first barrier layer 132a formed at a first temperature, and a second temperature higher than the first temperature. The second barrier layer 132b may be formed, and they may be formed in a multilayer structure in which a plurality of layers are stacked. That is, the active layer 130 is formed in a multilayered structure in which a quantum well layer 131 and a barrier layer 132 are stacked a plurality of times, and the barrier layer 132 in contact with the quantum well layer 131 and the quantum well layer 131. A portion of, for example, a first barrier layer 132a is formed at a first temperature, and the remainder of the barrier layer 132, for example a second barrier layer 132b on the first barrier layer 132a, is firstly formed. It is formed at a second temperature higher than the temperature. In order to form the active layer 130, for example, when the quantum well layer 131 is formed of an InGaN layer, and the first and second barrier layers 132a, 132b, and 132 are formed of GaN layers, inflow of In source is performed. And the interruption may be repeated and the deposition temperature may be changed to the first temperature and the second temperature to form the active layer 130 having a multilayer structure. When the quantum well layer 131 and the first barrier layer 132a formed thereon at the same temperature are formed when the first barrier layer 132a is formed at a higher temperature than the quantum well layer 131, for example, Phase separation can be prevented. By preventing phase separation of In, defects of the quantum well layer 131 can be prevented, and deterioration of efficiency and electrical characteristics of the light emitting device can be prevented by preventing defects. In addition, by forming the second barrier layer 132b on the first barrier layer 132a at a second temperature higher than the first temperature, the quality of the GaN crystal of the second barrier layer 132b can be improved, thereby The brightness and electrical characteristics can be improved. Meanwhile, in the present embodiment, one barrier layer 132 is formed of the first and second barrier layers 132a and 132b formed at different temperatures, but the barrier layer may be formed of two or more layers formed at different temperatures. . In this case, a part of the barrier layer 132 in contact with the quantum well layer 131 is formed at the same temperature as the quantum well layer 131, and the rest of the barrier layer 132 is higher than the quantum well layer 131 forming temperature. It is formed in, but can be formed by continuously increasing the temperature, it can be formed by increasing the temperature step by step.

The second semiconductor layer 140 may be a semiconductor layer doped with P-type impurities, thereby supplying holes to the active layer 130. For example, the second semiconductor layer 140 may use a GaN layer doped with P-type impurities, for example, Mg. However, the present invention is not limited thereto, and various semiconductor materials are possible. That is, a compound in which nitrides such as GaN, InN, AlN (Group III-V), and such nitrides are mixed at a predetermined ratio may be used. For example, various semiconductor materials including AlGaN and AlInGaN may be used. In addition, the second semiconductor layer 140 may be formed as a single layer or may be formed as a multilayer. Meanwhile, the second semiconductor layer 140 is formed by removing a region where the first electrode 160 is to be formed.

The transparent electrode 150 is formed on the second semiconductor layer 140 so that power applied through the second electrode 170 is evenly supplied to the second semiconductor layer 140. In addition, the transparent electrode 150 may be formed of a transparent conductive material so that light generated in the active layer 130 may be transmitted through. For example, the transparent electrode 150 may be formed using ITO, IZO, ZnO, RuOx, TiOx, IrOx, or the like.

The first and second electrodes 160 and 170 may be formed using a conductive material. For example, the first and second electrodes 160 and 170 may be formed using a metal material such as Ti, Cr, Au, Al, Ni, Ag, or an alloy thereof. have. In addition, the first and second electrodes 160 and 170 may be formed in a single layer or multiple layers. The first electrode 160 is formed on the exposed first semiconductor layer 120 by removing predetermined regions of the second semiconductor layer 140 and the active layer 130 to supply power to the first semiconductor layer 120. . In addition, the second electrode 170 is formed in a predetermined region above the transparent electrode 150 to supply power to the second semiconductor layer 140 through the transparent electrode 150. In this case, the first electrode 160 is formed near one corner of, for example, a rectangular light emitting device, and the second electrode 170 is formed at the center in contact with a surface opposite to the surface on which the first electrode 160 is formed. Can be. However, the formation positions of the first and second electrodes 160 and 170 may be variously changed.

As described above, in the light emitting device according to the exemplary embodiment, the active layer 130 is formed in a multilayer structure in which a plurality of quantum well layers 131 and a barrier layer 132 are stacked, and the quantum well layer 131 and the quantum well layer 131 are formed. A portion of the barrier layer 132 in contact with the well layer 131 is formed at a first temperature, and the remainder of the barrier layer 132 is formed at a second temperature higher than the first temperature. At this time, when forming the remainder of the barrier layer 132 may be formed while maintaining the second temperature, it may be formed by continuously increasing the temperature to a temperature higher than the first temperature, it may be formed by increasing the temperature step by step It may be. By forming the quantum well layer 131 and a part of the barrier layer 132 thereon at the same temperature, phase separation of the quantum well layer 131 can be prevented, thereby reducing the efficiency and electrical characteristics of the light emitting device. You can prevent it. In addition, by forming the remainder of the barrier layer 132 at a higher temperature than the quantum well layer 131, the crystallinity of the barrier layer 132 may be improved, thereby improving brightness and electrical characteristics.

[Table 1] shows an embodiment of the present invention and a quantum well layer in which a part of the barrier layer is formed at the same first temperature as the formation temperature of the quantum well layer and the rest of the barrier layer is formed at a second temperature higher than the first temperature. The wavelength, brightness and electrical characteristics of the conventional comparative example forming the entire barrier layer at a second temperature higher than the formation temperature are compared. Here, the second temperature is 65 ° C higher than the formation temperature of the quantum well layer, and the barrier layer is formed of InGaN. In addition, the electrical characteristics were measured when the ratio of the light emitting device that is normally operating without being destroyed when applying an ESD of 2000V.

Example (first and second temperature) Comparative example (second temperature) Case 1 Case 2 Case 1 Case 2 Wavelength (nm) 447.7 447.8 439.7 440.6 Luminance (120 mA) 91.9 91.5 66.79 68.39 ESD (2K survival rate) 84% 80% 67% 63%

As shown in Table 1, compared with the embodiment, the wavelength shifts to the shorter wavelength. This is because phase separation of InGaN of InGaN occurs due to thermal damage due to high temperature growth, and accordingly, In is volatilized to decrease In content. In addition, it can be seen that the embodiment of the present invention is also excellent in brightness and electrical properties compared to the comparative example. This is because InGaN In (metallic In cluster) is generated by thermal damage due to high temperature growth, and the ESD characteristics are reduced by current concentration due to high resistance. In addition, the luminance characteristic is deteriorated due to an increase in the non-radiative recombination region.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment of the present invention.

First, the first semiconductor layer 120 is formed on the substrate 110. The first semiconductor layer 120 may be formed of, for example, a GaN layer doped with N-type impurities. For this purpose, for example, trimethylgallium (TMGa) or triethylgallium (TEGa) as a gallium source, ammonia (NH 3 ) as a nitrogen source, and SiH 4 or SiH 6 as an N-type impurity are introduced to the silicon to be doped. The GaN layer can be formed. In addition, instead of GaN, InN and AlN may be formed as the N-type semiconductor layer 120. For this purpose, indium and aluminum sources are introduced instead of gallium sources. In addition, AlInGaN may be formed as the N-type semiconductor layer 120. For this purpose, gallium source, indium source, and aluminum source are introduced. The first semiconductor layer 120 may be formed at a temperature of 600 ° C. to 1200 ° C. and a pressure of 10 Torr to 760 Torr, for example, and may be formed to have a thickness of 1 μm to 10 μm, for example. Meanwhile, before forming the first semiconductor layer 120, a buffer layer (not shown) may be formed on the substrate 110, and a buffer layer and an undoped layer (not shown) may be formed on the substrate 110. have. The buffer layer may be formed of an AlGaN layer. For this purpose, an aluminum source gas such as trimethyl aluminum (TMAl), a gallium source such as trimethyl gallium and nitrogen such as ammonia may be introduced therein, and the temperature may be 400 ° C. to 1200 ° C .; Under the pressure of 10 Torr to 760 Torr, it can be formed in the thickness of 10 nm-1 micrometer. In addition, the undoped layer may be formed under the same conditions as the first semiconductor layer 120 without supplying impurities such as silicon before forming the first semiconductor layer 120.

Subsequently, the quantum well layer 131 of the active layer 130 is formed on the first semiconductor layer 120. The quantum well layer 131 may be formed of an InGaN layer. To form an InGaN layer, for example, an indium source such as trimethylindium (TMIn) or triethylindium (TEIn), a gallium source such as TMGa or TEGa, and a nitrogen source such as ammonia (NH 3 ) are introduced. Let's do it. These source materials are introduced to form the quantum well layer 131 and the reaction chamber is subjected to a first temperature T1 as shown in FIG. 3, for example, a temperature of 600 ° C. to 800 ° C. and a pressure of 50 Torr to 760 Torr. To form a thickness of, for example, 10 kPa to 100 kPa.

Subsequently, a first barrier layer 132a is formed on the quantum well layer 131. The first barrier layer 132a may be formed of a GaN layer using a gallium source and a nitrogen source. That is, after forming the quantum well layer 131 by supplying indium source, gallium source, and nitrogen source, the supply of indium source is stopped and the supply of gallium source and nitrogen source is maintained to maintain the supply of gallium source and nitrogen source to the GaN layer. To form. In addition, the first barrier layer 132a may be formed to have a thickness of 10 μs to 400 μs by introducing a source material and maintaining the reaction chamber under the same conditions as the quantum well layer 131. That is, the first barrier layer 132a may be formed by maintaining the reaction chamber at a first temperature T1, a temperature of 600 ° C. to 800 ° C., and a pressure of 50 Torr to 760 Torr as shown in FIG. 4. Thus, by forming the first barrier layer 132a at the same temperature as the formation temperature of the quantum well layer 131, it is possible to prevent phase separation of the quantum well layer 131 constituent material, thereby The defect can be prevented.

Subsequently, a second barrier layer 132b is formed on the first barrier layer 132a. The second barrier layer 132b is formed at a higher temperature than the first barrier layer 132a. That is, while maintaining the supply of gallium source and nitrogen source while maintaining the pressure, the temperature is maintained at a second temperature T2 higher than the first temperature T1, for example, 700 ° C. to 1100 ° C., as shown in FIG. 4. Form by raising. At this time, the second barrier layer 132b may be formed to a thickness of, for example, 10 kPa to 400 kPa. In this way, the film quality of the barrier layer 132 may be improved by forming the second barrier layer 132b at a higher temperature than the first barrier layer 132a. In addition, a plurality of the quantum well layers 131, the first barrier layer 132a, and the second barrier layer 132b are stacked to form an active layer 130 having a multilayer structure.

Subsequently, the second semiconductor layer 140 is formed on the active layer 130. The second semiconductor layer 140 is formed of, for example, a GaN layer doped with P-type impurities. For this purpose, a gallium source and a nitrogen source are introduced, and biscyclopentadienylmagnesium (Cp 2 Mg) is introduced to form a P-type GaN layer, for example, in order to dope magnesium (Mg) with P-type impurities. Meanwhile, in order to form InN and AlN instead of GaN as the P-type semiconductor layer, indium and aluminum sources may be introduced instead of gallium sources, and gallium, indium and aluminum sources may be introduced to form AlInGaN. For example, the second semiconductor layer 140 may be formed at a temperature of 600 ° C. to 1200 ° C. and a pressure of 10 Torr to 760 Torr, and may be formed to a thickness of 1 μm to 10 μm.

Subsequently, the transparent electrode 150 is formed on the second semiconductor layer 140. The transparent electrode 150 is formed in contact with the second semiconductor layer 140 to function as a reflective layer that reflects light while applying power to the second semiconductor layer 140. The transparent electrode 150 may be formed using a transparent conductive oxide such as indium tin oxide (ITO).

Subsequently, the transparent electrode 150, the second semiconductor layer 140, and the active layer 130 are patterned by performing a photolithography and etching process to expose a portion of the first semiconductor layer 120, and then expose the exposed first semiconductor layer. First and second electrodes 160 and 170 are formed on the upper portion and the second semiconductor layer 140, respectively.

In addition, the first semiconductor layer 120, the active layer 130 and the second semiconductor layer 140 may be formed continuously in the same reaction chamber, for example, metal organic chemical vapor deposition (MOCVD), hydride gas phase It can be formed using the growth method (HVPE), molecular beam growth method (MBE) and the like.

Meanwhile, the embodiment forms the quantum well layer 131 and the first barrier layer 132a at the first temperature T1, and maintains the temperature at a second temperature T2 higher than the first temperature T1. The second barrier layer 132b was formed. At this time, the first barrier layer 132a and the second barrier layer 132b have the same thickness. However, the second barrier layer 132b may be formed by continuously raising the second temperature T2 as illustrated in FIG. 4, or may be formed by gradually raising the second temperature T2 as illustrated in FIG. 5. In this case, the second barrier layer 132b may be formed thicker than the first barrier layer 132a. Accordingly, in the present invention, the quantum well layer 131 and the portion of the barrier layer 132 contacting the quantum well layer 131 are formed at the first temperature and the second temperature at which the remainder of the barrier layer 132 is higher than the first temperature. Including all the cases formed in, the second temperature may include both the case where the temperature continuously increases or the temperature rises step by step.

Although the technical spirit of the present invention has been described in detail according to the above embodiment, it should be noted that the above embodiment is for the purpose of description and not for the purpose of limitation. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

110 substrate 120 first semiconductor layer
130: active layer 131: quantum well layer
132a: first barrier layer 132b: second barrier layer
140: second semiconductor layer 150: transparent electrode
160, 170: first and second electrodes

Claims (8)

A first semiconductor layer, an active layer and a second semiconductor layer are laminated on the substrate,
The active layer is formed by stacking a plurality of quantum well layers and barrier layers,
A portion of the barrier layer in contact with the quantum well layer and the quantum well layer is formed at a first temperature,
And a remainder of the barrier layer formed at a second temperature higher than the first temperature.
The light emitting device of claim 1, wherein the second temperature maintains a constant temperature.
The light emitting device of claim 1, wherein the second temperature is continuously raised or gradually increased.
The light emitting device of claim 1, wherein a remainder of the barrier layer formed at the second temperature is equal to or thicker than a portion of the barrier layer formed at the first temperature. Forming a first semiconductor layer on the substrate;
Forming a quantum well layer on the first semiconductor layer at a first temperature;
Forming a portion of the barrier layer at the first temperature on the quantum well layer;
Forming a remainder of the barrier layer at a second temperature higher than the first temperature; And
Forming a second semiconductor layer on the barrier layer.
The method of claim 5, wherein the quantum well layer and the barrier layer are repeatedly formed a plurality of times.
The method of claim 6, wherein the second temperature is maintained at a constant temperature, continuously raised, or gradually increased. 7. The method of claim 6, wherein the remainder of the barrier layer formed at the second temperature is equal to or thicker than a portion of the barrier layer formed at the first temperature.
KR1020120032953A 2012-03-30 2012-03-30 Light emitting device and method of manufacturing the same KR20130110748A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904171A (en) * 2014-02-28 2014-07-02 华灿光电(苏州）有限公司 Manufacturing method of epitaxial wafer of GaN-based light emitting diode
CN115189232A (en) * 2022-07-07 2022-10-14 西安唐晶量子科技有限公司 Epitaxial wafer of semiconductor laser, preparation method of epitaxial wafer and semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904171A (en) * 2014-02-28 2014-07-02 华灿光电(苏州）有限公司 Manufacturing method of epitaxial wafer of GaN-based light emitting diode
CN115189232A (en) * 2022-07-07 2022-10-14 西安唐晶量子科技有限公司 Epitaxial wafer of semiconductor laser, preparation method of epitaxial wafer and semiconductor laser
CN115189232B (en) * 2022-07-07 2024-04-16 西安唐晶量子科技有限公司 Epitaxial wafer of semiconductor laser, epitaxial wafer preparation method and semiconductor laser

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