KR20140147279A - Light emitting diode and method of manufacturing the same - Google Patents

Light emitting diode and method of manufacturing the same Download PDF

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Publication number
KR20140147279A
KR20140147279A KR20130070237A KR20130070237A KR20140147279A KR 20140147279 A KR20140147279 A KR 20140147279A KR 20130070237 A KR20130070237 A KR 20130070237A KR 20130070237 A KR20130070237 A KR 20130070237A KR 20140147279 A KR20140147279 A KR 20140147279A
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South Korea
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layer
semiconductor layer
transparent electrode
current blocking
electrode
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KR20130070237A
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Korean (ko)
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김승용
황성주
김동우
송정섭
김두성
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일진엘이디(주)
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Priority to KR20130070237A priority Critical patent/KR20140147279A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention includes a first semiconductor layer which is laminated on a substrate, an active layer, a second semiconductor layer, a current blocking layer which is formed in a specific area on the second semiconductor layer, a transparent electrode which includes the current blocking layer and is formed on the second semiconductor layer, a first electrode which is formed on the first semiconductor layer, a second electrode which is formed on the transparent electrode, and at least one opening which is formed for a part of the transparent electrode on the current blocking layer to be removed.

Description

TECHNICAL FIELD The present invention relates to a light emitting diode (LED)

The present invention relates to a light emitting diode, and more particularly, to a light emitting diode capable of improving light efficiency and a method of manufacturing the same.

In general, nitrides such as GaN, AlN, InN, etc. have excellent thermal stability and have direct band-type energy band structure, and thus are attracting much attention as materials for photoelectric devices. In particular, GaN can be used for high temperature and high power devices because its energy band gap is very large at 3.4 eV at room temperature.

A light emitting diode using a GaN semiconductor generally comprises an N-type GaN layer, an active layer and a P-type GaN layer stacked on the substrate, and an N-type electrode and a P-type electrode respectively connected to the N-type GaN layer and the P- do. Then, a transparent electrode is formed by using ITO or the like in order to uniformly diffuse the current supplied from the P-type electrode to the P-type GaN layer. Further, in order to increase the current dispersion effect, a current blocking layer is formed under the P-type electrode to prevent the current from being concentrated around the P-type electrode, and the current diffusion efficiency from the transparent electrode is increased, . When a predetermined current is applied to the N-type electrode and the P-type electrode, electrons provided from the N-type GaN layer and holes provided from the P-type GaN layer are recombined in the active layer so that light having a wavelength corresponding to the energy gap .

However, the current blocking layer is formed larger than the P-type electrode using an insulating layer such as silicon oxide. Light is reflected between the current blocking layer and the transparent electrode due to the refractive index difference between the current blocking layer and the transparent electrode, The efficiency is lowered. That is, the P-type GaN layer has a refractive index of 2.4 at a wavelength of 450 nm and a refractive index of 1.46 when the current blocking layer is formed of silicon oxide. When the transparent electrode is formed of ITO, the refractive index is 1.9 Respectively. Since the refractive index of the transparent electrode is larger than that of the current blocking layer, light is reflected by the transparent electrode and flows into the light emitting diode, thereby lowering the light efficiency.

In addition, although the current density can be increased to improve the light efficiency, there is a problem that the operating voltage increases in this case.

The present invention provides a light emitting diode capable of preventing light efficiency deterioration due to light reflection between a current blocking layer and a transparent electrode, and a method of manufacturing the same.

The present invention provides a light emitting diode capable of improving light efficiency without increasing the operating voltage and a method of manufacturing the light emitting diode.

A light emitting diode according to an embodiment of the present invention includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked on a substrate; A current blocking layer formed in a predetermined region on the second semiconductor layer; A transparent electrode formed on the second semiconductor layer including the current blocking layer; A first electrode formed on the first semiconductor layer; A second electrode at least partially formed in contact with the transparent electrode; And at least one opening formed by removing at least a part of the transparent electrode on the current blocking layer.

The second electrode may be formed on the transparent electrode, or a part of the transparent electrode may be removed to contact at least a part of the exposed current blocking layer.

The opening may be formed by removing at least a part of the transparent electrode and the current blocking layer.

The opening may be formed by removing at least a part of the transparent electrode, the current blocking layer, the second semiconductor layer, and the active layer.

The opening may be formed in an area that does not increase the operating voltage, and the opening may be formed in an area of 0.1% to 40% of the area of the transparent electrode on the current blocking layer.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode including: forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate; Forming a current blocking layer in a predetermined region on the second semiconductor layer; Forming a transparent electrode on the second semiconductor layer including the current blocking layer; Forming at least one opening in at least a portion of the transparent electrode, the current blocking layer, the second semiconductor layer, and the active layer; And forming a first electrode on the first semiconductor layer and forming a second electrode such that at least a portion of the first electrode is in contact with the transparent electrode.

The opening may be formed in an area of 0.1% to 40% of the area of the transparent electrode on the current blocking layer.

The light emitting diode according to embodiments of the present invention forms at least one opening in the transparent electrode on the current blocking layer. The opening may be formed by removing a predetermined region of the transparent electrode so that the current blocking layer is exposed or by removing a predetermined region of the transparent electrode and the current blocking layer to expose the second semiconductor layer. The transparent electrode, the current blocking layer, the second semiconductor layer, and the active layer may be removed to remove the first semiconductor layer.

Accordingly, the area of the transparent electrode having a higher refractive index than that of the current blocking layer can be reduced, and accordingly, the light reflected from the transparent electrode can be reduced, and the light efficiency can be improved.

Further, since the opening may be formed in the etching process for exposing the first semiconductor to form the first electrode, the number of processes may not be increased.

1 is a sectional view of a light emitting diode according to an embodiment of the present invention;
2 is a cross-sectional view of a light emitting diode according to another embodiment of the present invention;
3 is a cross-sectional view of a light emitting diode according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely. In the drawings, the thickness is enlarged to clearly illustrate the various layers and regions, and the same reference numerals denote the same elements in the drawings.

1 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention.

1, a light emitting diode according to an exemplary embodiment of the present invention includes a first semiconductor layer 120 formed on a substrate 110, an active layer 130, a second semiconductor layer 140, a current blocking layer 150 A first electrode 170 formed on the first semiconductor layer 130 and a second electrode 180 formed on the transparent electrode 160 in a predetermined region. The organic EL display further includes an opening 162 formed by removing a predetermined region of the transparent electrode 160 on the current blocking layer 150. A buffer layer (not shown) may be further formed between the substrate 110 and the first semiconductor layer 120.

The substrate 110 refers to a conventional wafer for fabricating a light emitting diode, and preferably a material suitable for growing a nitride semiconductor single crystal may be used. For example, the substrate 110 can use any one of Al 2 O 3 , SiC, ZnO, Si, GaAs, GaP, LiAl 2 O 3 , BN, AlN and GaN. A buffer layer (not shown) may be formed on the substrate 110. The buffer layer is formed to relax the lattice mismatch between the substrate 110 and the first semiconductor layer 120 and to overcome the difference in the thermal expansion coefficient. Such a buffer layer may be formed without doping, and may be formed of an InAlGaN-based or SiC-based material.

The first semiconductor layer 120 may be an N-type semiconductor doped with an N-type impurity, thereby supplying electrons to the active layer 130. The first semiconductor layer 120 may use an N-type impurity, for example, a Si-doped GaN layer. However, various semiconductor materials are possible without limitation. That is, nitrides such as GaN, InN, AlN (III-V group) and the like can be used, and compounds obtained by mixing these nitrides in a certain ratio can be used. For example, AlGaN can be used. In addition, the first semiconductor layer 120 may be formed as a single film or as a multilayer film.

The active layer 130 has a predetermined bandgap and is a region where quantum wells are formed to recombine electrons and holes. The active layer 130 may be formed of a single quantum well structure (SQW) or a multiple quantum well structure (MQW). The multiple quantum well structure may be formed by repeatedly stacking a plurality of quantum well layers and barrier layers repeatedly. For example, the active layer 130 of the multiple quantum well structure may be formed by repeatedly laminating InGaN and GaN, and may be formed by repeatedly laminating AlGaN and GaN. Here, depending on the kind of the material forming the active layer 130, the emission wavelength generated by the combination of electrons and holes changes, so that it is preferable to control the semiconductor material included in the active layer 130 according to a target wavelength. Meanwhile, the active layer 130 is formed by removing the region where the first electrode 170 is to be formed.

The second semiconductor layer 140 may be a semiconductor layer doped with a P-type impurity, and thus holes may be supplied to the active layer 130. The second semiconductor layer 140 may use a P-type impurity, for example, a Mg-doped GaN layer. However, various semiconductor materials are possible without limitation. That is, nitrides such as GaN, InN, AlN (III-V group) and the like can be used, and compounds obtained by mixing these nitrides in a certain ratio can be used. For example, various semiconductor materials including AlGaN and AlInGaN can be used Do. In addition, the second semiconductor layer 140 may be formed as a single film or as a multilayer film. Meanwhile, the second semiconductor layer 140 is formed by removing the region where the first electrode 160 is to be formed.

The current blocking layer 150 is formed on a predetermined region of the second semiconductor layer 140. That is, the current blocking layer 150 may be formed in a region between the second semiconductor layer 140 and the second electrode 180, and may be formed to be equal to or larger than the second electrode 180. The current blocking layer 150 prevents current from being directly applied from the second electrode 180 to the second semiconductor layer 140. That is, when a current is directly applied from the second electrode 180 to the second semiconductor layer 140, the current density below the second electrode 180 is higher than the other regions, and uniform light emission is difficult. May be reflected by the second electrode 180 and may not be output, resulting in optical loss. Accordingly, the current blocking layer 150 is formed to prevent light from being generated below the second electrode 180, thereby reducing uniform light emission and optical loss. Meanwhile, the current blocking layer 150 may be formed using an insulating material such as silicon oxide.

The transparent electrode 160 is formed on the second semiconductor layer 140 including the current blocking layer 150. The transparent electrode 160 allows the current supplied through the second electrode 180 to be uniformly supplied to the second semiconductor layer 140. That is, since the second semiconductor layer 140 has a resistance of several ohms, for example, and has horizontally, for example, several hundreds of k ?, the current does not flow in the horizontal direction but flows in the vertical direction only. Accordingly, when power is locally applied to the second semiconductor layer 140, current does not flow through the second semiconductor layer 140 as a whole. Therefore, the transparent electrode 160 is formed to allow the current to flow through the second semiconductor layer 140 as a whole . In addition, the transparent electrode 160 may be formed of a transparent conductive material so that light generated in the active layer 130 can be transmitted well. For example, the transparent electrode 160 can be formed using ITO, IZO, ZnO, RuOx, TiOx, IrOx, or the like. The transparent electrode 160 may be formed entirely on the second semiconductor layer 140.

The transparent electrode 160 formed on the current blocking layer 150 may have a predetermined opening 162 to expose a predetermined region of the current blocking layer 150. At least one or more openings 162 may be formed. That is, the openings 162 may have a predetermined size or may be formed in plural. These openings 162 may be formed in a pattern such as a circle, an ellipse, and a polygon. Further, when the plurality of openings 162 are formed, they may be formed to have the same size or at least two sizes different from each other. Since the opening 162 is formed in the transparent electrode 160 formed on the current blocking layer 150, the area of the transparent electrode 160 having a higher refractive index than the current blocking layer 150 can be reduced. Accordingly, the amount of light reflected by the transparent electrode 160 is reduced, thereby improving the light efficiency. That is, the refractive index of the second semiconductor layer 150 is about 2.4, the refractive index of the current blocking layer 150 is about 1.46 when the current blocking layer 150 is made of silicon oxide, and the refractive index is about 1.9 when the transparent electrode 160 is made of ITO Since the refractive index of the transparent electrode 160 is larger than that of the current blocking layer 150, light is reflected by the transparent electrode 160 and flows into the second semiconductor layer 150 again. However, The area of the transparent electrode 160 on the current blocking layer 150 can be reduced by forming at least one opening 162 in the electrode 160 so that light reflected from the transparent electrode 160 can be reduced The light efficiency can be improved. However, the larger the area occupied by the at least one opening 162, the smaller the amount of light reflected from the transparent electrode 160, but the smaller the current applied from the second electrode 180, the higher the operating voltage may be. Therefore, it is preferable that the opening 162 is formed in an area capable of improving the light output without increasing the operating voltage. For example, the opening 162 may be formed in an area of 0.1% to 40% of the area of the transparent electrode 160 on the current blocking layer 150.

The first and second electrodes 170 and 180 may be formed using a conductive material such as a metal material such as Ti, Cr, Au, Al, Ni, or Ag, or an alloy thereof. have. In addition, the first and second electrodes 170 and 180 may be formed as a single layer or a multilayer. The first electrode 170 is formed on the exposed first semiconductor layer 120 by removing a predetermined region of the transparent electrode 160, the second semiconductor layer 140 and the active layer 130 to form a first semiconductor layer 120 ). The second electrode 180 is formed on a predetermined region of the transparent electrode 160 to supply power to the second semiconductor layer 140 through the transparent electrode 160. Here, the second electrode 180 may be formed such that a part of the transparent electrode 160 is removed so that a part of the current blocking layer 170 is exposed to the exposed region. That is, the second electrode 180 may be formed in contact with the current blocking layer 150 from above and from the side of the transparent electrode 160. For example, the first electrode 170 is formed in the vicinity of one corner of the rectangular light emitting diode, and the second electrode 180 is formed at a central portion in contact with the surface opposite to the surface on which the first electrode 170 is formed. . However, the formation positions of the first and second electrodes 170 and 180 may be variously changed. That is, when the second electrode 180 is locally formed in the case of the large area light emitting diode, the current can not be uniformly supplied to the second semiconductor layer 140, so that the second electrode 180 is extended from one region to the outside Quot; C "shape.

As described above, the light emitting diode according to the embodiment of the present invention includes the transparent electrode 160 having the higher refractive index than the current blocking layer 150 by forming the opening 162 in the transparent electrode 160 on the current blocking layer 150 Can be reduced, and the light efficiency can be improved accordingly. In addition, the opening 162 can be formed with an area that can improve the light output without increasing the operating voltage. Table 1 shows the increase in the operating voltage and the light output according to the area ratio of the opening 162 to the area of the transparent electrode 160 on the current blocking layer 150.

Area ratio of openings (%) Increase in operating voltage (V) Light output (%) Comparative Example 0% 0.000 100% Example 1 16.4% 0.000 100.90% Example 2 26.8% 0.000 100.80% Example 3 32.7% 0.004 100.80% Example 4 39.9% 0.007 100.80% Example 5 42.1% 0.010 100.80%

When the area ratio of the openings 162 shown in [Table 1] is 40% or less, the light output increases with respect to the increase in the operating voltage. That is, when the area ratio of the opening 162 exceeds 40%, the light output is the same but the operating voltage continues to increase. Accordingly, the opening 162 can be formed with an area ratio of 0.1% to 40%, and preferably, an area ratio of 0.1% to 30% can be formed so that the light output can be increased without increasing the operating voltage. have.

In an embodiment of the present invention, at least one opening 162 is formed in the transparent electrode 160 on the current blocking layer 150. However, as shown in FIG. 2, At least one opening 164 may be formed in the first semiconductor layer 150 to expose the second semiconductor layer 140. 3, at least one opening 166 is formed in a predetermined region of the transparent electrode 160, the current blocking layer 150, the second semiconductor layer 140, and the active layer 130, The semiconductor layer 120 may be exposed. That is, since current is not applied to the lower side of the current blocking layer 150, the openings 164 and 166 may be formed by removing a part of these regions.

Hereinafter, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described.

First, a first semiconductor layer 120 is formed on a substrate 110. The first semiconductor layer 120 may be formed of, for example, a GaN layer doped with an N-type impurity. For this purpose, for example, trimethylgallium (TMGa) or triethylgallium (TEGa) is used as a gallium source, ammonia (NH 3 ) is used as a nitrogen source, and SiH 4 or SiH 6 is doped as an N- GaN layer can be formed. In addition, instead of GaN, InN and AlN may be formed as the N-type semiconductor layer 120. For this purpose, an indium source and an aluminum source are introduced instead of a gallium source. In addition, AlInGaN can be formed as the N-type semiconductor layer 120. To this end, gallium source, indium source, and aluminum source are introduced. The first semiconductor layer 120 may be formed at a temperature of, for example, 600 ° C. to 1200 ° C. and a pressure of 10 Torr to 760 Torr. For example, the first semiconductor layer 120 may have a thickness of 1 μm to 10 μm. A buffer layer (not shown) may be formed on the substrate 110 before the first semiconductor layer 120 is formed, and a buffer layer and an undoped layer (not shown) may be formed on the substrate 110 have. For this purpose, an aluminum source gas such as trimethyl aluminum (TMAl), a gallium source such as trimethyl gallium and nitrogen such as ammonia are introduced into the buffer layer, and a temperature of 400 ° C to 1200 ° C, And can be formed to a thickness of 10 nm to 1 탆 under a pressure of 10 Torr to 760 Torr. The undoped layer may be formed under the same conditions as those of the first semiconductor layer 120 without supplying impurities such as silicon before the first semiconductor layer 120 is formed.

Next, the active layer 130 is formed on the first semiconductor layer 120. The active layer 130 may be formed by alternately repeating deposition of a quantum well layer and a barrier layer. The quantum well layer may be formed of an InGaN layer. In order to form the InGaN layer, an indium source such as trimethylindium (TMIn) or triethylindium (TEIn), a gallium source such as TMGa or TEGa, and a nitrogen source such as ammonia (NH 3 ) . In order to form the quantum well layer, these source materials are introduced and the reaction chamber is formed with a thickness of, for example, 10 Å to 100 Å, for example, at a temperature of 600 ° C. to 800 ° C. and a pressure of 50 Torr to 760 Torr. The barrier layer may be formed of a GaN layer using a gallium source and a nitrogen source. That is, after a quantum well layer is formed by supplying an indium source, a gallium source, and a nitrogen source, the supply of the indium source is stopped and the supply of gallium source and nitrogen source is maintained to form a barrier layer with the GaN layer. In addition, the source material may be introduced and the reaction chamber may be maintained at the same conditions as the quantum well layer to form a barrier layer with a thickness of, for example, 10 Å to 400 Å. That is, the barrier layer can be formed by maintaining the reaction chamber at a temperature of 600 캜 to 800 캜 and a pressure of 50 Torr to 760 Torr.

Next, a second semiconductor layer 140 is formed on the active layer 130. The second semiconductor layer 140 is formed of, for example, a GaN layer doped with a P-type impurity. For this purpose, a p-type GaN layer is formed by introducing gallium source and nitrogen source, and introducing biscyclopentadienylmagnesium (Cp 2 Mg), for example, for doping magnesium (Mg) with a p-type impurity. On the other hand, in order to form InN, AlN or the like instead of GaN as a P-type semiconductor layer, an indium source and an aluminum source may be introduced instead of a gallium source, and a gallium source, an indium source and an aluminum source may be introduced in order to form AlInGaN. The second semiconductor layer 140 may be formed at a temperature of, for example, 600 ° C. to 1200 ° C. and a pressure of 10 Torr to 760 Torr, and may be formed to a thickness of 1 μm to 10 μm.

Next, an insulating layer such as silicon oxide is formed on the second semiconductor layer 140, and then the insulating layer is patterned to form the current blocking layer 150. The current blocking layer 150 may be formed in a region where the second electrode 180 is to be formed and may have a size equal to or larger than that of the second electrode 180.

Next, a transparent electrode 160 is formed on the second semiconductor layer 140 including the current blocking layer 150. The transparent electrode 160 is formed in contact with the second semiconductor layer 140 so that a power applied through the second electrode 180 is uniformly applied to the second semiconductor layer 140. The transparent electrode 160 is formed of ITO (Indium Tin Oxide) or the like can be used.

Then, at least one opening 162 is formed in a predetermined region of the transparent electrode 160 by performing a photo and etching process. That is, at least one opening 162 may be formed by etching a predetermined region of the transparent electrode 160 on the current blocking layer 150. At this time, at least one opening 162 may be formed by etching the transparent electrode 160 on the current blocking layer 150 except the region where the second electrode 180 is to be formed. The area occupied by the at least one opening 162 may be 40% or less of the area of the transparent electrode 160 on the current blocking layer 150.

Then, the transparent electrode 160, the second semiconductor layer 140, and the active layer 130 are patterned to expose a part of the first semiconductor layer 120. Thereafter, First and second electrodes 170 and 180 are formed on the upper portion of the transparent electrode 160 and the upper portion of the current blocking layer 150, respectively.

Although the technical idea of the present invention has been specifically described according to the above embodiments, it should be noted that the above embodiments are for explanation purposes only and not for the purpose of limitation. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

110: substrate 120: first semiconductor layer
130: active layer 140: second semiconductor layer
150: current blocking layer 160: transparent electrode
170: first electrode 180: second electrode
162, 164, 166: opening

Claims (8)

A first semiconductor layer, an active layer, and a second semiconductor layer stacked on the substrate;
A current blocking layer formed in a predetermined region on the second semiconductor layer;
A transparent electrode formed on the second semiconductor layer including the current blocking layer;
A first electrode formed on the first semiconductor layer;
A second electrode at least partially formed in contact with the transparent electrode; And
And at least one opening formed by removing at least a part of the transparent electrode on the current blocking layer.
[2] The light emitting diode of claim 1, wherein the second electrode is formed such that a part of the transparent electrode is removed to at least partially contact the exposed current blocking layer.
The light emitting diode according to claim 1, wherein the opening is formed by removing at least a part of the transparent electrode and the current blocking layer.
The light emitting diode according to claim 1, wherein the opening is formed by removing at least a part of the transparent electrode, the current blocking layer, the second semiconductor layer, and the active layer.
The light emitting diode according to claim 3 or 4, wherein the opening has an area that does not increase the operating voltage.
The light emitting diode according to claim 5, wherein the opening has an area of 0.1% to 40% of an area of the transparent electrode on the current blocking layer.
Stacking a first semiconductor layer, an active layer and a second semiconductor layer on a substrate;
Forming a current blocking layer in a predetermined region on the second semiconductor layer;
Forming a transparent electrode on the second semiconductor layer including the current blocking layer;
Forming at least one opening in at least a portion of the transparent electrode, the current blocking layer, the second semiconductor layer, and the active layer; And
Forming a first electrode on the first semiconductor layer and forming a second electrode such that at least a portion of the first electrode is in contact with the transparent electrode.
The method according to claim 7, wherein the opening is formed in an area of 0.1% to 40% of an area of the transparent electrode on the current blocking layer.
KR20130070237A 2013-06-19 2013-06-19 Light emitting diode and method of manufacturing the same KR20140147279A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108428772A (en) * 2017-02-15 2018-08-21 晶元光电股份有限公司 Photoelectric cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108428772A (en) * 2017-02-15 2018-08-21 晶元光电股份有限公司 Photoelectric cell
CN108428772B (en) * 2017-02-15 2021-08-06 晶元光电股份有限公司 Optoelectronic component

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