JP2863633B2 - 半導体デバイスの加速的劣化テストのための装置及び方法 - Google Patents

半導体デバイスの加速的劣化テストのための装置及び方法

Info

Publication number
JP2863633B2
JP2863633B2 JP6510031A JP51003194A JP2863633B2 JP 2863633 B2 JP2863633 B2 JP 2863633B2 JP 6510031 A JP6510031 A JP 6510031A JP 51003194 A JP51003194 A JP 51003194A JP 2863633 B2 JP2863633 B2 JP 2863633B2
Authority
JP
Japan
Prior art keywords
semiconductor device
current
test method
wafer
testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6510031A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08502822A (ja
Inventor
エドモンド，ジョン・エイ
アスバリー，ダグラス・エイ
カーター，カルビン・エイチ，ジュニアー
ウォルツ，ダグラス・ジー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KURII RISAACHI Inc
Original Assignee
KURII RISAACHI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KURII RISAACHI Inc filed Critical KURII RISAACHI Inc
Publication of JPH08502822A publication Critical patent/JPH08502822A/ja
Application granted granted Critical
Publication of JP2863633B2 publication Critical patent/JP2863633B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP6510031A 1992-10-13 1993-09-27 半導体デバイスの加速的劣化テストのための装置及び方法 Expired - Lifetime JP2863633B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/959,714 US5381103A (en) 1992-10-13 1992-10-13 System and method for accelerated degradation testing of semiconductor devices
US959,714 1992-10-13
PCT/US1993/009181 WO1994009378A1 (en) 1992-10-13 1993-09-27 System and method for accelerated degradation testing of semiconductor devices

Publications (2)

Publication Number Publication Date
JPH08502822A JPH08502822A (ja) 1996-03-26
JP2863633B2 true JP2863633B2 (ja) 1999-03-03

Family

ID=25502324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6510031A Expired - Lifetime JP2863633B2 (ja) 1992-10-13 1993-09-27 半導体デバイスの加速的劣化テストのための装置及び方法

Country Status (10)

Country Link
US (1) US5381103A (show.php)
EP (1) EP0664889B1 (show.php)
JP (1) JP2863633B2 (show.php)
KR (1) KR100252775B1 (show.php)
CN (1) CN1046350C (show.php)
AT (1) ATE166725T1 (show.php)
AU (1) AU5141593A (show.php)
DE (1) DE69318845T2 (show.php)
TW (1) TW237566B (show.php)
WO (1) WO1994009378A1 (show.php)

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US6810344B1 (en) * 1999-11-11 2004-10-26 Kabushiki Kaisha Toshiba Semiconductor testing method and semiconductor testing apparatus for semiconductor devices, and program for executing semiconductor testing method
US6885203B1 (en) * 2000-03-16 2005-04-26 Sharp Laboratories Of America, Inc. Wafer level burn-in using light as the stimulating signal
US6597195B1 (en) * 2000-07-28 2003-07-22 Labsphere, Inc. Method of and cassette structure for burn-in and life testing of multiple LEDs and the like
US6490037B1 (en) 2000-11-13 2002-12-03 Test Coach Corporation Method and apparatus for verifying a color of an LED in a printed circuit board
US7023554B2 (en) * 2003-11-14 2006-04-04 Test Coach Corporation Method and apparatus for determining a color and brightness of an LED in a printed circuit board
US7265822B2 (en) * 2004-10-01 2007-09-04 Test Coach Corporation Method and apparatus for determining presence of a component in a printed circuit board
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US8294484B1 (en) * 2007-05-31 2012-10-23 Finisar Corporation Pulse voltage age acceleration of a laser for determining reliability
US7991574B2 (en) * 2008-01-29 2011-08-02 International Business Machines Corporation Techniques for filtering systematic differences from wafer evaluation parameters
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
WO2010095809A2 (ko) * 2009-02-20 2010-08-26 (주)큐엠씨 엘이디 칩 테스트장치
EP2334144A1 (en) * 2009-09-07 2011-06-15 Nxp B.V. Testing of LEDs
CN101672888B (zh) * 2009-09-22 2013-05-29 上海宏力半导体制造有限公司 二极管反向电容的测量方法
US8476918B2 (en) * 2010-04-28 2013-07-02 Tsmc Solid State Lighting Ltd. Apparatus and method for wafer level classification of light emitting device
TWM430614U (en) * 2011-12-21 2012-06-01 Youngtek Electronics Corp Fiber optic light guiding top cover structure
CN102608509B (zh) * 2011-12-22 2015-06-03 中国科学院半导体研究所 对发光二极管进行光电热老化综合检测的方法
US8907686B2 (en) 2012-02-02 2014-12-09 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for accelerating device degradation and diagnosing the physical changes of the device during the degradation process
CN102628735A (zh) * 2012-03-15 2012-08-08 威力盟电子(苏州)有限公司 Led的耐热测试装置以及耐热测试方法
CN102779208B (zh) * 2012-06-19 2014-11-05 北京航空航天大学 基于相对熵的序贯加速退化试验优化设计方法
CN104142461B (zh) * 2013-05-09 2017-05-17 中芯国际集成电路制造(上海)有限公司 半导体器件老化测试方法
CN103364032B (zh) * 2013-07-15 2015-09-16 中国科学院半导体研究所 半导体发光器件或模组在线多功能测试系统及方法
JP6075257B2 (ja) * 2013-09-25 2017-02-08 富士電機株式会社 炭化珪素半導体装置の検査方法及び検査装置
US20170038425A1 (en) * 2015-08-03 2017-02-09 Fisher Controls International Llc Apparatus and methods to detect semiconductor device degradation due to radiation exposure
JP6692646B2 (ja) * 2016-01-19 2020-05-13 スタンレー電気株式会社 半導体発光素子および該素子構成を含むウェハにおける品質管理方法
US10302496B2 (en) 2016-02-09 2019-05-28 Nasa Solutions, Llc Method and apparatus for determining presence and operation of a component in a printed circuit board
US10319648B2 (en) * 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
CN107093651B (zh) * 2017-05-18 2023-08-04 江西比太科技有限公司 太阳能硅片二合一自动上下料设备
JP7013685B2 (ja) * 2017-06-08 2022-02-01 富士電機株式会社 炭化珪素半導体装置の選別方法
US10612978B2 (en) * 2018-03-01 2020-04-07 International Business Machines Corporation Light emitting diode color resolution testing
US11125780B2 (en) 2018-10-18 2021-09-21 International Business Machines Corporation Test probe assembly with fiber optic leads and photodetectors
US11119148B2 (en) 2018-10-18 2021-09-14 International Business Machines Corporation Test probe assembly with fiber optic leads and photodetectors for testing semiconductor wafers
CN109521348B (zh) * 2018-11-12 2020-12-29 重庆大学 一种直流断路器用igbt模块的可靠性测试及寿命评估方法
JP7422731B2 (ja) * 2019-02-27 2024-01-26 ヌヴォトンテクノロジージャパン株式会社 光源装置
CN113466649B (zh) * 2021-06-29 2022-10-25 西安交通大学 一种判断浪涌电流测试中SiC MOSFET失效原因的方法
CN114664704B (zh) * 2022-03-18 2024-10-29 东莞市中麒光电技术有限公司 Led芯片筛选方法及显示屏

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JPH06101592B2 (ja) * 1989-08-31 1994-12-12 株式会社東芝 半導体発光素子の発光出力測定装置
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Also Published As

Publication number Publication date
ATE166725T1 (de) 1998-06-15
CN1090053A (zh) 1994-07-27
CN1046350C (zh) 1999-11-10
US5381103A (en) 1995-01-10
KR100252775B1 (ko) 2000-04-15
WO1994009378A1 (en) 1994-04-28
DE69318845D1 (de) 1998-07-02
TW237566B (show.php) 1995-01-01
EP0664889A1 (en) 1995-08-02
EP0664889B1 (en) 1998-05-27
AU5141593A (en) 1994-05-09
DE69318845T2 (de) 1998-11-05
JPH08502822A (ja) 1996-03-26

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