JP2858088B2 - Light receiving device - Google Patents
Light receiving deviceInfo
- Publication number
- JP2858088B2 JP2858088B2 JP6321713A JP32171394A JP2858088B2 JP 2858088 B2 JP2858088 B2 JP 2858088B2 JP 6321713 A JP6321713 A JP 6321713A JP 32171394 A JP32171394 A JP 32171394A JP 2858088 B2 JP2858088 B2 JP 2858088B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- circuit board
- receiving device
- receiving element
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光信号を高い感度で受
光し得るようにした受光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light receiving device capable of receiving an optical signal with high sensitivity.
【０００２】[0002]
【従来の技術】業務用のカラオケ装置等にあっては、カ
ラオケボックスにそれぞれ装備され、多数の装置が近接
して配設されることがある。そこで、混信を防ぐため
に、マイクロフォンから赤外線信号を放射し、これを受
信側の音響装置で受光するものが普及している。2. Description of the Related Art In a karaoke apparatus for business use, a karaoke box is provided with each of them, and a number of apparatuses may be arranged in close proximity. Therefore, in order to prevent interference, a type in which an infrared signal is radiated from a microphone and received by an acoustic device on the receiving side has become widespread.
【０００３】かかるカラオケ装置等の赤外線信号を受光
するための従来の受光装置には、小さなチップ状の光−
電気変換素子がケース内に納められ、このケースから外
部リードが導出されたピンフォトダイオード等が用いら
れている。所定の感度を得るために、上述のピンフォト
ダイオードを複数個配設してこれらを並列接続し、また
はピンフォトダイオードの前方に集光レンズ等が配設さ
れている。A conventional light receiving device for receiving an infrared signal, such as a karaoke device, includes a small chip-shaped light beam.
An electric conversion element is housed in a case, and a pin photodiode or the like in which an external lead is led out of the case is used. In order to obtain a predetermined sensitivity, a plurality of the above-described pin photodiodes are provided and connected in parallel, or a condenser lens or the like is provided in front of the pin photodiode.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上述の複数個
のピンフォトダイオードを並列接続したものにあって
は、ピンフォトダイオードの個数の割に、感度の向上が
得られない。また、集光レンズを用いるものは、その構
造が複雑なものとなる。However, in the case where the plurality of pin photodiodes are connected in parallel, the sensitivity cannot be improved for the number of pin photodiodes. Further, those using a condensing lens have a complicated structure.
【０００５】特許出願人らは、構造が簡単でしかも受光
感度を向上させる研究および実験を重ねた結果、ピンフ
ォトダイオードを回路接続するための外部リードと回路
の構造および受光装置の回路に対する外来雑音電気信号
等が感度の向上を妨げていることを知見するに到った。As a result of repeated research and experiments to improve the light receiving sensitivity with a simple structure, the patent applicants have found that the structure of the external lead and circuit for connecting the pin photodiode to the circuit and the external noise to the circuit of the light receiving device have been studied. It has been found that electric signals and the like hinder the improvement of sensitivity.
【０００６】本発明は、上述の事情に鑑みてなされたも
ので、一辺が数ｍｍの寸法のチップ状の受光素子を複数
個並べて配置して回路基板に直接ボンディングすること
で感度を向上させた受光装置を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and has improved sensitivity by arranging a plurality of chip-shaped light receiving elements each having a size of several mm on one side and bonding them directly to a circuit board. An object is to provide a light receiving device.
【０００７】[0007]
【課題を解決するための手段】かかる目的を達成するた
めに、本発明の受光装置は、回路基板に設けられた配線
パターン上に、一辺が数ｍｍの寸法のチップ状に形成し
た受光素子を複数個並べて配置して直接ボンディング
し、これらの受光素子を囲んで枠体を前記回路基板上に
設け、この枠体内に透光性の樹脂を充填凝固させて構成
されている。In order to achieve the above object, a light receiving device according to the present invention comprises a light receiving element formed on a wiring pattern provided on a circuit board in a chip shape having a side of several mm. A plurality of these are arranged and directly bonded, and a frame is provided on the circuit board so as to surround these light receiving elements, and the frame is filled with a light-transmitting resin and solidified.
【０００８】そして、前記受光素子の出力信号を高イン
ピーダンスに変換する電界効果トランジスタを前記回路
基板上に前記受光素子に近接して設け、このインピーダ
ンス変換された出力信号を前記回路基板上に設けられた
増幅器で増幅するようになし、前記受光素子と電界効果
トランジスタおよび増幅器を覆いしかも前記受光素子の
表面から離して網状のシールドカバーを前記回路基板に
設けて構成しても良い。A field effect transistor for converting an output signal of the light receiving element into a high impedance is provided on the circuit board close to the light receiving element, and the impedance-converted output signal is provided on the circuit board. The circuit board may be provided with a net-shaped shield cover that covers the light receiving element, the field effect transistor, and the amplifier and is separated from the surface of the light receiving element.
【０００９】[0009]
【作用】一辺が数ｍｍの寸法のチップ状の複数個の受光
装置を回路基板の配線パターン上に並べて配置して直接
ボンディングするので、従来のごとき外部リードを必要
とせず、外部リードによる信号の減衰および信号に対す
る外来雑音電気信号等の重畳を妨げ得る。しかも、複数
個の受光素子を囲んで枠体を回路基板上に設け、透光性
の樹脂を充填凝固させるので、受光素子は樹脂によりモ
ールドされた状態となり、受光素子自体に塵芥等が付着
せず、凝固した樹脂表面を拭うことで容易に塵芥等によ
る受光量の減少を改善し得る。また、振動等に対して強
固であり、従来のごときピンフォトダイオードにみられ
る回路基板に対する取り付け姿勢の変化等による受光量
の減少もない。[Function] A plurality of chip-shaped light receiving devices each having a size of several mm are arranged side by side on a wiring pattern of a circuit board and directly bonded, so that an external lead is not required as in the prior art, and a signal of the external lead is not required. Attenuation and superposition of extraneous noise electrical signals and the like on the signal may be prevented. Moreover, a frame is provided on the circuit board surrounding the plurality of light-receiving elements, and the light-transmitting resin is filled and solidified, so that the light-receiving elements are molded with the resin, and dust and the like adhere to the light-receiving elements themselves. Instead, by wiping the solidified resin surface, it is possible to easily reduce the decrease in the amount of received light due to dust and the like. Further, it is robust against vibrations and the like, and there is no decrease in the amount of received light due to a change in the mounting posture of the conventional pin photodiode with respect to the circuit board as seen in a conventional pin photodiode.
【００１０】そして、受光素子の出力信号を電界効果ト
ランジスタでインピーダンス変換して増幅器に与えるな
らば、光信号の変化に伴なう受光素子の抵抗変化を、電
気信号の変化として減衰させることなく効率良く増幅器
に入力させ得る。しかも、受光素子と電界効果トランジ
スタおよび増幅器等を囲んで網状のシールドカバーを設
けるならば、外部からの光は網の目を透過して受光素子
に入力されるが、外来雑音電気信号はシールドカバーで
シールドされ、装置の出力信号に含まれる雑音レベルを
抑制し得る。また、シールドカバーが受光素子の表面か
ら離して設けられるならば、シールドカバーによる影の
影響が少ないとともに、その影が受光素子の特定位置と
なるようなことがない。If the output signal of the light receiving element is impedance-converted by the field effect transistor and applied to the amplifier, the change in the resistance of the light receiving element caused by the change in the optical signal can be efficiently performed without attenuating the change in the electric signal. Can be input to the amplifier well. In addition, if a net-shaped shield cover is provided to surround the light receiving element, the field effect transistor, the amplifier, and the like, external light passes through the mesh and is input to the light receiving element, but external noise electric signals are shielded. And can suppress the noise level included in the output signal of the device. Further, if the shield cover is provided away from the surface of the light receiving element, the influence of the shadow by the shield cover is small and the shadow does not become a specific position of the light receiving element.
【００１１】[0011]
【実施例】以下、本発明の一実施例を図１ないし図４を
参照して説明する。図１（ａ）は、本発明の受光装置の
一実施例のピンフォトダイオードを設けた回路基板の平
面図であり、図１（ｂ）は、図１（ａ）のＡ−Ａ矢視断
面拡大図である。図２は、図１（ａ）に示す回路基板の
回路図である。図３（ａ）は、本発明の受光装置と従来
の装置との感度を比較するグラフであり、図３（ｂ）
は、図３（ａ）にグラフを示す従来の装置の回路図であ
る。図４は、回路基板とシールドカバーの分解斜視図で
ある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. FIG. 1A is a plan view of a circuit board provided with a pin photodiode according to one embodiment of the light receiving device of the present invention, and FIG. 1B is a cross-sectional view taken along the line AA in FIG. It is an enlarged view. FIG. 2 is a circuit diagram of the circuit board shown in FIG. FIG. 3A is a graph comparing the sensitivity of the light receiving device of the present invention with that of the conventional device, and FIG.
FIG. 3 is a circuit diagram of a conventional device whose graph is shown in FIG. FIG. 4 is an exploded perspective view of the circuit board and the shield cover.
【００１２】まず、図２を参照して、本発明の受光装置
の一実施例の回路を説明する。受光装置の電源として、
例えば＋２８Ｖの直流電圧が受信側の音響装置から同軸
ケーブル（図示せず）等により入出力端子１０の中心導
体に与えられる。この直流電圧は交流阻止用のインダク
タンスＬ１を介して発光ダイオードＬＤの一端に与えら
れるとともに電流制限用の抵抗Ｒ１の一端に与えられ
る。発光ダイオードＬＤの他端は、電圧調整器１２に接
続されるとともに平滑用コンデンサＣ１を介して接地さ
れる。電圧調整器１２で適宜な電圧に調整された直流電
圧が、ＩＣからなる増幅器１４に電源として与えられる
とともに、抵抗Ｒ２，Ｒ３をそれぞれに介して第１と第
２の電界効果トランジスタＦＥＴ１，ＦＥＴ２のドレイ
ンにそれぞれ与える。また、電圧調整器１２の出力電圧
は、コンデンサＣ２を介して接地される。First, a circuit of an embodiment of the light receiving device of the present invention will be described with reference to FIG. As a power supply for the light receiving device,
For example, a DC voltage of +28 V is applied to the center conductor of the input / output terminal 10 by a coaxial cable (not shown) or the like from the receiving-side acoustic device. This DC voltage is applied to one end of the light emitting diode LD via an AC blocking inductance L1 and to one end of a current limiting resistor R1. The other end of the light emitting diode LD is connected to the voltage regulator 12 and grounded via the smoothing capacitor C1. The DC voltage adjusted to an appropriate voltage by the voltage regulator 12 is supplied as power to the amplifier 14 composed of an IC, and the first and second field-effect transistors FET1 and FET2 are respectively connected via resistors R2 and R3. Give each to the drain. The output voltage of the voltage regulator 12 is grounded via the capacitor C2.
【００１３】抵抗Ｒ１の両端は、交流減衰用のコンデン
サＣ３，Ｃ４をそれぞれに介して接地される。そして、
この抵抗Ｒ１の他端は、４個の受光素子としてのピンフ
ォトダイオードＰＤ１〜４の一端にそれぞれ接続され
る。これらの４個のピンフォトダイオードＰＤ１〜４
は、２個ずつ並列接続され、第１と第２のピンフォトダ
イオードＰＤ１，ＰＤ２の並列接続体の他端が、インダ
クタンスＬ２を介して接地されるとともに、コンデンサ
Ｃ５を介して第１の電界効果トランジスタＦＥＴ１のゲ
ートに接続される。さらに、この第１の電界効果トラン
ジスタＦＥＴ１は、ゲートが抵抗Ｒ４を介して接地さ
れ、ソースが抵抗Ｒ５を介して接地されるとともにコン
デンサＣ６を介して増幅器１４の入力端子に接続され
る。また、第３と第４のピンフォトダイオードＰＤ３，
ＰＤ４の並列接続体の他端が、インダクタンスＬ３を介
して接地されるとともに、コンデンサＣ７を介して第２
の電界効果トランジスタＦＥＴ２のゲートに接続され
る。さらに、この第２の電界効果トランジスタＦＥＴ２
は、ゲートが抵抗Ｒ６を介して接地され、ソースが抵抗
Ｒ７を介して接地されるとともにコンデンサＣ８を介し
て増幅器１４の入力端子に接続される。この増幅器１４
の出力端子は、コンデンサＣ９を介して入出力端子１０
の中心導体に接続される。Both ends of the resistor R1 are grounded via respective AC attenuation capacitors C3 and C4. And
The other end of the resistor R1 is connected to one end of each of pin photodiodes PD1 to PD4 serving as four light receiving elements. These four pin photodiodes PD1 to PD4
Are connected in parallel two by two, the other end of the parallel connection of the first and second pin photodiodes PD1 and PD2 is grounded via an inductance L2, and the first field effect is connected via a capacitor C5. Connected to the gate of transistor FET1. Further, the gate of the first field-effect transistor FET1 is grounded via a resistor R4, the source is grounded via a resistor R5, and connected to the input terminal of the amplifier 14 via a capacitor C6. Also, the third and fourth pin photodiodes PD3,
The other end of the parallel connection of PD4 is grounded via an inductance L3, and the second end is connected via a capacitor C7.
Of the field effect transistor FET2. Further, the second field effect transistor FET2
Has a gate grounded via a resistor R6, a source grounded via a resistor R7, and is connected to the input terminal of the amplifier 14 via a capacitor C8. This amplifier 14
Is connected to an input / output terminal 10 via a capacitor C9.
Is connected to the center conductor.
【００１４】かかる回路において、受光する光量の変化
に応じてピンフォトダイオードＰＤ１〜４の抵抗が変化
し、電気信号の電圧変化として第１と第２の電界効果ト
ランジスタＦＥＴ１，ＦＥＴ２のゲートに与えられる。
すると、この電気信号は、第１と第２の電界効果トラン
ジスタＦＥＴ１，ＦＥＴ２により高インピーダンスに変
換され、インピーダンス変換された信号が合成されて増
幅器１４に与えられる。そして、増幅された電気信号が
入力端子１０に接続される同軸ケーブ等を介して受信側
の音響装置等に伝送される。ここで、コンデンサＣ５と
インダクタンスＬ２およびコンデンサＣ７とインダクタ
ンスＬ３は、それぞれ共振回路を形成し、共振信号で最
も大きな電流が流れ、所定搬送波周波数の光信号が選択
される。In such a circuit, the resistance of the pin photodiodes PD1 to PD4 changes in accordance with the change in the amount of light received, and is applied to the gates of the first and second field effect transistors FET1 and FET2 as a voltage change of an electric signal. .
Then, the electric signal is converted into high impedance by the first and second field-effect transistors FET1 and FET2, and the impedance-converted signal is combined and supplied to the amplifier 14. Then, the amplified electric signal is transmitted to a receiving-side acoustic device or the like via a coaxial cable or the like connected to the input terminal 10. Here, the capacitor C5 and the inductance L2 and the capacitor C7 and the inductance L3 each form a resonance circuit, the largest current flows among the resonance signals, and an optical signal having a predetermined carrier frequency is selected.
【００１５】次に、回路の構造につき、図１を参照して
説明する。回路は、表面に適宜な配線パターン１６が設
けられ裏面にグランドパターン１８が設けられた回路基
板２０に搭載構成される。第１〜第４のピンフォトダイ
オードは、一例として一辺４．５ｍｍの正方形で比較的
に大きなチップ状に構成される。そして、４つのピンフ
ォトダイオードＰＤ１〜４は、並列に配置されて、所定
の配線パターン１６上に裏面全体を載せて銀ペースト２
２により電気的接続されるとともに固着されて直接ボン
ディングされ、このピンフォトダイオードＰＤ１〜４の
表面がこれに添うように設けられた別の配線パターン１
６にワイヤボンディングにより接続される。さらに、４
つのピンフォトダイオードＰＤ１〜４の側方を全体的に
囲むように、表側が大きく開口された枠体２４が回路基
板２０上に接着等により固定され、この枠体２４内に赤
外線の透過率が良い樹脂２６が充填されて凝固される。
そして、第１と第２の電界効果トランジスタＦＥＴ１，
ＦＥＴ２が、ピンフォトダイオードＰＤ１〜４に比較的
に近接して回路基板２０上に適宜に配置される。そし
て、ピンフォトダイオードＰＤ１〜４の表面にワイヤボ
ンディングにより接続された配線パターン１６がコンデ
ンサＣ５，Ｃ７を介して第１と第２の電界効果トランジ
スタＦＥＴ１，ＦＥＴ２のゲートにそれぞれ接続される
が、この接続用の配線パターン１６はなるべく短かい距
離となるように構成されている。そして、他の回路素子
が回路基板２０上に適宜に配設されている。なお、発光
ダイオードＬＤは、裏面のグランドパターン１８を一部
切り欠いて配線パターンが設けられている。Next, the structure of the circuit will be described with reference to FIG. The circuit is mounted and configured on a circuit board 20 provided with an appropriate wiring pattern 16 on the front surface and a ground pattern 18 on the back surface. As an example, the first to fourth pin photodiodes are configured in a relatively large chip shape with a square of 4.5 mm on a side. The four pin photodiodes PD1 to PD4 are arranged in parallel, and the entire back surface thereof is placed on a predetermined wiring pattern 16 so that the silver paste 2
2 are electrically connected to each other, fixed and directly bonded, and another wiring pattern 1 provided so that the surfaces of the pin photodiodes PD1 to PD4 are provided so as to adhere thereto.
6 is connected by wire bonding. In addition, 4
A frame 24 having a large opening on the front side is fixed on the circuit board 20 by bonding or the like so as to entirely surround the sides of the three pin photodiodes PD1 to PD4. Good resin 26 is filled and solidified.
Then, the first and second field effect transistors FET1,
The FET 2 is appropriately arranged on the circuit board 20 relatively close to the pin photodiodes PD1 to PD4. The wiring patterns 16 connected to the surfaces of the pin photodiodes PD1 to PD4 by wire bonding are connected to the gates of the first and second field effect transistors FET1 and FET2 via the capacitors C5 and C7, respectively. The connection wiring pattern 16 is configured to be as short as possible. Other circuit elements are appropriately arranged on the circuit board 20. In the light emitting diode LD, a wiring pattern is provided by partially cutting out the ground pattern 18 on the back surface.
【００１６】さらに、本発明の受光装置にあっては、ピ
ンフォトダイオードＰＤ１〜４と第１と第２の電界効果
トランジスタＦＥＴ１，ＦＥＴ２と増幅器１４さらには
他の回路素子等を覆うように、回路基板２０の表側に網
状のシールドカバー２８が設けられる。このシールドカ
バー２８は、ピンフォトダイオードＰＤ１〜４に対して
網目を通過して光信号を到達させ、外来雑音電気信号を
シールドする作用をなす。しかも、シールドカバー２８
は、ピンフォトダイオードＰＤ１〜４の表面から離して
設けられている。網目の大きさは、前記作用を奏する範
囲で適宜に設定すれば良い。そして、網目の形状は、図
４に示すごとき格子状に限られるものでない。Further, in the light receiving device of the present invention, the circuit is designed so as to cover the pin photodiodes PD1 to PD4, the first and second field effect transistors FET1 and FET2, the amplifier 14, and other circuit elements. A net-shaped shield cover 28 is provided on the front side of the substrate 20. The shield cover 28 allows the pin photodiodes PD1 to PD4 to pass an optical signal through the mesh and shield the external noise electric signal. Moreover, the shield cover 28
Are provided apart from the surfaces of the pin photodiodes PD1 to PD4. The size of the mesh may be appropriately set within a range in which the above-described operation is achieved. The shape of the mesh is not limited to the lattice shape as shown in FIG.
【００１７】かかる構造からなる本発明の受光装置の性
能を従来の装置と比較した実測値が図３（ａ）である。
この測定は以下の条件で行なわれている。まず、赤外線
信号を放射する赤外線ワイヤレスマイクには、４００Ｈ
ｚの信号を音声信号とし、２．３ＭＨｚの搬送波周波数
信号がＦＭ５ＫＨｚで変調され、この変調搬送波周波数
信号により赤外線発光ＬＥＤが駆動される。そして、こ
の赤外線ワイヤレスマイクより６０ｃｍの一定距離だけ
離して受光装置が赤外線ワイヤレスマイクに向けて配置
され、受光装置の出力信号がスペクトラムアナライザー
で記録される。本発明の受光装置は、上記のごとき回路
と構造であり、従来の装置は、図３（ｂ）に示すごと
く、従来の外部リードを有する４個のピンフォトダイオ
ードを並列接続し、他の回路定数および増幅器１４は同
じものが用いられている。しかも、赤外線信号を放射す
る赤外線ワイヤレスマイクは同じものである。FIG. 3A shows the measured values of the performance of the light receiving device of the present invention having such a structure in comparison with the conventional device.
This measurement is performed under the following conditions. First, an infrared wireless microphone that emits infrared signals has a 400H
The signal of z is used as an audio signal, and a carrier frequency signal of 2.3 MHz is modulated at FM5 KHz, and the modulated carrier frequency signal drives an infrared light emitting LED. Then, the light receiving device is arranged facing the infrared wireless microphone at a fixed distance of 60 cm from the infrared wireless microphone, and the output signal of the light receiving device is recorded by the spectrum analyzer. The light receiving device of the present invention has the above-described circuit and structure, and the conventional device has a conventional configuration in which four pin photodiodes having external leads are connected in parallel as shown in FIG. The same constant and amplifier 14 are used. Moreover, the infrared wireless microphone that emits the infrared signal is the same.
【００１８】図３（ａ）に示すごとく、本発明の受光装
置にあっては、信号レベルが−２２．４ｄＢｍであり雑
音レベルが−８２．０ｄＢｍであるのに対して、従来の
装置にあっては、信号レベルが−４５．４ｄＢｍであり
雑音レベルが−９６．０ｄＢｍであった。そこで、本発
明の受光装置は従来の装置に比べて、信号レベルが２３
ｄＢだけ上昇し、雑音レベルが１４ｄＢだけ上昇してい
る。したがって、Ｃ／Ｎ比が９ｄＢ、すなわち約２．８
倍ほど改善されており、Ｓ／Ｎ比の向上が達成されてい
る。As shown in FIG. 3A, in the light receiving device of the present invention, the signal level is -22.4 dBm and the noise level is -82.0 dBm, whereas the conventional device is not. In this case, the signal level was -45.4 dBm and the noise level was -96.0 dBm. Therefore, the light receiving device of the present invention has a signal level of 23 compared to the conventional device.
The noise level has increased by 14 dB. Therefore, the C / N ratio is 9 dB, that is, about 2.8.
The improvement is about twice, and the improvement of the S / N ratio is achieved.
【００１９】なお、上記実施例にあっては、４個のピン
フォトダイオードＰＤ１〜４を用いて回路構成がなされ
ているが、その個数はいくつであっても良い。また、光
信号を電気信号に変換する受光素子は、ピンフォトダイ
オードに限られず、他のアバランシェフォトダイオード
でも良く、さらにはフォトトランジスタ等であっても良
い。さらに、上記実施例では、光信号として赤外線を用
いているが、これに限られず、可視光線でも同様の効果
が得られることは勿論である。In the above embodiment, the circuit configuration is made using four pin photodiodes PD1 to PD4, but the number may be any number. Further, the light receiving element for converting the optical signal into the electric signal is not limited to the pin photodiode, but may be another avalanche photodiode, or a phototransistor. Furthermore, in the above embodiment, infrared light is used as the optical signal. However, the present invention is not limited to this, and it is a matter of course that the same effect can be obtained with visible light.
【００２０】[0020]
【発明の効果】以上説明したように、本発明の受光装置
は構成されているので、以下のごとき格別な効果を奏す
る。As described above, since the light receiving device of the present invention is constituted, the following special effects can be obtained.
【００２１】請求項１記載の受光装置にあっては、一辺
が数ｍｍの寸法のチップ状の複数個の受光素子が配線パ
ターンに並べて配置されて直接ボンディングされている
ので、従来の装置のごとく外部リード等を必要とせず、
それだけ信号の減衰が少ないとともに、外来雑音電気信
号が重畳されることがなく、感度の向上が図れる。しか
も、複数個のチップ状の受光素子が樹脂によりモールド
されるので、振動等に対して回路基板に強固配設でき、
取り付け姿勢が回路基板に対して変化して感度が劣化す
るようなことがない。しかも、塵芥等を拭うことが容易
である。In the light-receiving device according to the first aspect, a plurality of chip-shaped light-receiving elements each having a size of several mm on one side are arranged side by side in a wiring pattern and directly bonded, so that the light-receiving device is similar to a conventional device. No need for external leads, etc.
As a result, the signal is less attenuated, and the external noise electric signal is not superimposed, so that the sensitivity can be improved. Moreover, since a plurality of chip-shaped light receiving elements are molded with resin, they can be firmly arranged on a circuit board against vibrations and the like.
The mounting posture does not change with respect to the circuit board and the sensitivity does not deteriorate. Moreover, it is easy to wipe dust and the like.
【００２２】そして、請求項２記載の受光装置にあって
は、受光素子の出力信号が、近接して配置された電界効
果トランジスタでインピーダンス変換されて増幅器に入
力されるので、出力信号の減衰がなく、それだけ感度が
向上する。しかも、網状のシールドカバーを設けるの
で、回路に対する外来雑音電気信号の影響を抑制でき、
しかも網目を通過した光信号を受光素子で受光でき、装
置全体としてのＳ／Ｎ比が改善される。また、シールド
カバーを受光素子の表面から離して設けるので、シール
ドカバーによる受光素子への影の影響が少なく、その影
が受光素子の特定位置となるようなこともない。さら
に、光源が広い面であれば、受光素子への影は無くなり
またはより小さなものとなる。Further, in the light receiving device according to the second aspect, the output signal of the light receiving element is impedance-converted by the field effect transistor arranged in close proximity and input to the amplifier, so that the output signal is attenuated. No, the sensitivity is improved accordingly. In addition, since the mesh-shaped shield cover is provided, the influence of the external noise electric signal on the circuit can be suppressed,
In addition, the optical signal passing through the mesh can be received by the light receiving element, and the S / N ratio of the entire device is improved. Further, since the shield cover is provided separately from the surface of the light receiving element, the influence of the shadow on the light receiving element by the shield cover is small, and the shadow does not become a specific position of the light receiving element. Further, if the light source is a wide surface, the shadow on the light receiving element is eliminated or smaller.
【図１】（ａ）は、本発明の受光装置の一実施例のピン
フォトダイオードを設けた回路基板の平面図であり、
（ｂ）は、（ａ）のＡ−Ａ矢視断面拡大図である。FIG. 1A is a plan view of a circuit board provided with a pin photodiode according to one embodiment of a light receiving device of the present invention,
FIG. 2B is an enlarged cross-sectional view taken along the line AA in FIG.
【図２】図１（ａ）に示す回路基板の回路図である。FIG. 2 is a circuit diagram of the circuit board shown in FIG.
【図３】（ａ）は、本発明の受光装置と従来の装置との
感度を比較するグラフであり、（ｂ）は、（ａ）にグラ
フを示す従来の装置の回路図である。FIG. 3A is a graph comparing the sensitivity of the light receiving device of the present invention with that of a conventional device, and FIG. 3B is a circuit diagram of the conventional device shown in FIG.
【図４】回路基板とシールドカバーの分解斜視図であ
る。FIG. 4 is an exploded perspective view of a circuit board and a shield cover.
１４ 増幅器 １６ 配線パターン ２０ 回路基板 ２４ 枠体 ２６ 樹脂 ２８ シールドカバー ＰＤ１〜４ ピンフォトダイオード ＦＥＴ１，２ 電界効果トランジスタ DESCRIPTION OF SYMBOLS 14 Amplifier 16 Wiring pattern 20 Circuit board 24 Frame 26 Resin 28 Shield cover PD1-4 pin photodiode FET1, Field effect transistor
フロントページの続き (56)参考文献 特開 平４−290477（ＪＰ，Ａ) 特開 昭52−138888（ＪＰ，Ａ) 特開 昭60−218887（ＪＰ，Ａ) 特開 平１−107118（ＪＰ，Ａ) 実開 昭64−30861（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/02Continuation of the front page (56) References JP-A-4-290477 (JP, A) JP-A-52-138888 (JP, A) JP-A-60-218887 (JP, A) JP-A-1-107118 (JP) , A) Japanese Utility Model Showa 64-30861 (JP, U) (58) Field surveyed (Int. Cl. 6 , DB name) H01L 31/02
Claims (2)
に、一辺が数ｍｍの寸法のチップ状に形成した受光素子
を複数個並べて配置して直接ボンディングし、これらの
受光素子を囲んで枠体を前記回路基板上に設け、この枠
体内に透光性の樹脂を充填凝固させて構成したことを特
徴とする受光装置。1. A plurality of light receiving elements formed in a chip shape having a size of several mm on one side are arranged on a wiring pattern provided on a circuit board, and are directly bonded to each other. Is provided on the circuit board, and a translucent resin is filled in the frame and solidified to form a light receiving device.
受光素子の出力信号を高インピーダンスに変換する電界
効果トランジスタを前記回路基板上に前記受光素子に近
接して設け、このインピーダンス変換された出力信号を
前記回路基板上に設けられた増幅器で増幅するようにな
し、前記受光素子と電界効果トランジスタおよび増幅器
を覆いしかも前記受光素子の表面から離して網状のシー
ルドカバーを前記回路基板に設けたことを特徴とする受
光装置。2. A light receiving device according to claim 1, wherein a field effect transistor for converting an output signal of said light receiving element into a high impedance is provided on said circuit board in close proximity to said light receiving element, and said impedance-converted output is provided. A signal is amplified by an amplifier provided on the circuit board, and a net-shaped shield cover is provided on the circuit board so as to cover the light receiving element, the field-effect transistor, and the amplifier and to be separated from a surface of the light receiving element. A light receiving device characterized by the above-mentioned.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6321713A JP2858088B2 (en) | 1994-11-30 | 1994-11-30 | Light receiving device |
| CN 95107824 CN1123975A (en) | 1994-11-30 | 1995-06-26 | Infrared rays receiver |
| GB9513859A GB2295727A (en) | 1994-11-30 | 1995-07-07 | Light pickup device |
| TW84107207A TW269080B (en) | 1994-11-30 | 1995-07-12 | Infrared rays receiver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6321713A JP2858088B2 (en) | 1994-11-30 | 1994-11-30 | Light receiving device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8093467A Division JPH08279622A (en) | 1996-03-22 | 1996-03-22 | Photodetecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08162650A JPH08162650A (en) | 1996-06-21 |
| JP2858088B2 true JP2858088B2 (en) | 1999-02-17 |
Family
ID=18135612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6321713A Expired - Lifetime JP2858088B2 (en) | 1994-11-30 | 1994-11-30 | Light receiving device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2858088B2 (en) |
| CN (1) | CN1123975A (en) |
| GB (1) | GB2295727A (en) |
| TW (1) | TW269080B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2302995A (en) * | 1995-06-29 | 1997-02-05 | John Michael Walmsley Lawrence | Electromagnetic shielding of components on a circuit board |
| CN100435342C (en) * | 2005-04-15 | 2008-11-19 | 业程科技股份有限公司 | Contact image display structure |
| EP1643556A3 (en) * | 2006-01-16 | 2006-11-22 | Elec Vision Inc. | Contact image capturing structure |
| JP6956898B2 (en) * | 2018-10-19 | 2021-11-02 | 三菱電機株式会社 | Bathroom Dryer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52138888A (en) * | 1976-05-14 | 1977-11-19 | Nec Corp | Photo detector |
| GB2126795B (en) * | 1982-09-09 | 1986-12-03 | Plessey Co Plc | Optical device |
| JPH0695578B2 (en) * | 1984-04-13 | 1994-11-24 | 浜松ホトニクス株式会社 | Semiconductor photo detector |
| JPS6430861U (en) * | 1987-08-19 | 1989-02-27 | ||
| JPH01107118A (en) * | 1987-10-20 | 1989-04-25 | Yokogawa Electric Corp | Semiconductor apparatus for measuring light power |
| JPH04290477A (en) * | 1991-03-19 | 1992-10-15 | Fujitsu Ltd | Semiconductor device and its mounting structure |
| GB9225274D0 (en) * | 1992-12-03 | 1993-01-27 | Int Computers Ltd | Electronic circuit assemblies |
-
1994
- 1994-11-30 JP JP6321713A patent/JP2858088B2/en not_active Expired - Lifetime
-
1995
- 1995-06-26 CN CN 95107824 patent/CN1123975A/en active Pending
- 1995-07-07 GB GB9513859A patent/GB2295727A/en not_active Withdrawn
- 1995-07-12 TW TW84107207A patent/TW269080B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| GB9513859D0 (en) | 1995-09-06 |
| GB2295727A (en) | 1996-06-05 |
| JPH08162650A (en) | 1996-06-21 |
| CN1123975A (en) | 1996-06-05 |
| TW269080B (en) | 1996-01-21 |
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