JP2850889B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of forming a cylindrical electrode used for a stacked capacitor of a DRAM.

[0002]

2. Description of the Related Art Among semiconductor memory devices, there is a DRAM capable of arbitrarily inputting and outputting stored information. The memory cell of this DRAM has one transfer transistor and one transfer transistor.
Is composed of two capacitors and is structurally simple,
It is widely used as most suitable for high integration of semiconductor memory devices.

In such a memory cell capacitor,
As the semiconductor devices become more highly integrated, those having a three-dimensional structure have been developed and used. 3 of this capacitor
The dimensioning is based on the following reasons. 2. Description of the Related Art With miniaturization and higher density of semiconductor elements, it is essential to reduce the area occupied by capacitors. However, in order to ensure stable operation and reliability of the DRAM, a capacitance value equal to or more than a certain value is required. Therefore, it is necessary to change the electrode of the capacitor from a planar structure to a three-dimensional structure, and to increase the surface area of the capacitor electrode within the reduced occupied area.

The three-dimensional structure of the DRAM memory cell includes a stack structure and a trench structure. Various types of cylindrical capacitors have been proposed as stacked capacitors. For example, Japanese Patent Application Laid-Open No. 6-1
In Japanese Patent No. 51747, a proposal is made to increase the surface area by forming a storage electrode of a capacitor in a cylindrical shape.

Hereinafter, a capacitor electrode formed by the conventional method will be described with reference to the drawings. First, Figure 1
As shown in FIG. 1, a field oxide film 2 is selectively formed on a P-type silicon substrate 1, and a gate electrode 4 made of a polysilicon film or the like is formed in a device region via a gate oxide film 3. Next, an N-type source (or drain) region 5 and a drain (or source) region 6 are formed in self-alignment with the gate electrode 4, and an insulating film 7 containing silicon oxide as a main component is formed. With the insulating film 7 formed, an opening 7 is formed by lithography and dry etching so as to reach the drain (or source) region 6.
Then, a bit line 8 having a polycide structure made of a polycrystalline silicon film and a tungsten silicide film is formed.

Next, an interlayer insulating film 9 mainly composed of silicon oxide is formed, and then a silicon nitride film 10 having a thickness of 100 nm is formed thereon as shown in FIG. (Source).
Next, a polysilicon film 21 is formed on the entire surface including the opening 9a by CVD using the CVD method. Next, a silicon oxide film is deposited on the polysilicon film 21 by a CVD method, and the silicon oxide film is patterned by a lithography technique to form a columnar core oxide film 22. Next, a polysilicon film 23 is deposited on the core oxide film 22 and the polysilicon film 21 by a CVD method, a silicon oxide film is further formed on the entire surface, and then the silicon oxide film is anisotropically etched by a RIE method. A spacer 24 is formed on the side wall of the oxide film 22.

Next, as shown in FIG. 4B, the polysilicon film 23 is anisotropically etched by RIE to expose the upper portion of the core oxide film 22. Thereby, the cylindrical electrode 23
A is formed.

Next, as shown in FIG. 4C, the polysilicon film 21 is etched to form a bottom electrode 21A.
Core oxide film and spacer 2 by hydrofluoric acid based etchant
4 is removed. Next, the bottom electrode 21A and the cylindrical electrode 23A
Is ion-implanted to form a lower electrode 25 composed of a bottom electrode 21A and a cylindrical electrode 23A.

Finally, as shown in FIG. 4D, a capacitor insulating film 16 is formed on the entire surface.
6, an upper electrode 17 is formed on the entire surface to complete the capacitor.

[0010]

In this conventional method for forming a cylindrical electrode, the silicon nitride film 10 is used as an etching stopper under the bottom electrode 21A, so that the interlayer film becomes thick. Was. FIG. 4
As shown in (c), when the core oxide film is removed, the etching time is prolonged, and the etchant penetrates into the insulating film 9 from the interface between the bottom electrode and the etching stopper, and a cavity is formed in the insulating film 9 around the opening 9a. There was a problem of making 25.

It is an object of the present invention to provide a method of manufacturing a semiconductor device in which an interlayer insulating film below a capacitor can be made thin, and no void is formed in the interlayer insulating film.

[0012]

According to a method of manufacturing a semiconductor device of the present invention, a step of forming a bottom electrode film for a capacitor on the surface of an insulating film on a semiconductor substrate, and selectively forming a circle on the bottom electrode film. A step of forming a conductive film on the entire surface after forming the columnar core member, and anisotropically etching the conductive film to expose the surface of the core member and form a cylindrical electrode on the side wall thereof; A step of etching the bottom electrode film between the core members to reduce the film thickness, and forming an insulating film on the entire surface after removing the core member having an exposed surface, and performing anisotropic etching on the outer surface of the cylindrical electrode. Forming a spacer on a wall and an inner wall, and anisotropically etching and removing the bottom electrode film exposed between the cylindrical electrodes while protecting the cylindrical electrode with the spacer; To Forming a bottom electrode consisting of Kisoko portion electrode film, it is characterized in that a step of forming an insulating film for a capacitor on the surface of the lower electrode composed of the bottom electrode and the cylindrical electrode.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. 1 (a) and 1 (b) and FIGS.
FIG. 2D is a cross-sectional view of the semiconductor chip for explaining the first embodiment of the present invention, and FIG. 2 particularly shows a structure above an interlayer insulating film.

First, as shown in FIG. 1A, a field oxide film 2 is formed on a P-type silicon substrate 1 by a selective oxidation method, and then a gate oxide film 3 is formed in an element region. Through a thickness of 20 made of a polysilicon film or the like.
A gate electrode 4 of 0 nm is formed. A field oxide film 2 and the gate electrode 4 as a mask in the following, As and BF _2, respectively ^{3 × 10 15 / cm 2,} 2 × 10 15 / cm 2 implanted source (or drain) region 5 and the drain (or source 6) is formed. Next, after an insulating film 7 made of a silicon oxide film or the like is formed on the entire surface by a CVD method, an opening 7a is formed by using a lithography technique and a dry etching technique. Next, after forming a 200 nm-thick bit line 8 made of a polycrystalline silicon film and a tungsten silicide film, an interlayer insulating film 9 containing silicon oxide as a main component is formed. Next, openings 9a are formed in the interlayer insulating film 9 and the insulating film 7 by lithography.

Next, as shown in FIG. 2A, the bottom electrode film 11 made of conductive polysilicon is entirely formed by the CVD method.
Is deposited to a thickness of about 400 nm, and is connected to the source region 5 by filling the opening 9a. Next, a silicon oxide film as a core member is deposited to a thickness of about 600 nm by the CVD method and then etched by the RIE method to form a columnar core oxide film 12 at the center of the portion where the cylindrical electrode is arranged.
Next, a conductive polysilicon film 13 is formed on the entire surface to a thickness of about 150 nm.

Next, as shown in FIG. 2B, a polysilicon film 13 is formed by using HBr and Cl ₂ -based etching gas.
Is anisotropically etched to expose the upper surface of the core oxide film 12 and to form a cylindrical electrode 1 made of a polysilicon film 13 on the side wall thereof.
3A and the thickness of the polysilicon film 13 between the core oxide films 12 is left thin by over-etching.
Since the remaining polysilicon film 13 is used as a stopper when the core oxide film is removed, the thickness may be about 30 to 50 nm.

Next, as shown in FIG. 2C, the core oxide film 12 is removed with a hydrofluoric acid-based etchant. Next, after a silicon oxide film having a thickness of 100 nm is formed on the entire surface, anisotropic etching is performed to form spacers 14 on the outer and inner side walls of the cylindrical electrode 13A.

Next, as shown in FIG.
By etching and removing the bottom electrode film 11 between the cylindrical electrodes 13A while protecting the 3A with the spacer 14,
A bottom electrode 1 having a thickness of about 100 nm is provided below the cylindrical electrode 13A.
1A is formed, and the lower electrode 15 is formed together with the cylindrical electrode 13A.

Next, as shown in FIG.
5, a capacitor insulating film 16 made of an oxide film, a nitride film, or the like.
And a capacitor having a cylindrical electrode is completed by forming an upper electrode 17 made of a polysilicon film or the like.

As described above, according to the first embodiment, since the silicon nitride film as the etching stopper is not used when the cylindrical electrode 13A is formed as in the related art, the thickness of the interlayer insulating film can be reduced. it can. Further, since the core oxide film 12 is removed in a state where the bottom electrode film 11 remains thin on the interlayer insulating film 9, the etching solution permeates the interface of the lower electrode to form a cavity in the interlayer insulating film as in the conventional case. Is also gone.

FIGS. 3A to 3C are cross-sectional views of a semiconductor chip for explaining a second embodiment of the present invention, and particularly show an upper structure of an interlayer insulating film 9 as in FIG. Things. This will be described below with reference to FIGS.

First, as shown in FIGS. 1 (a) and 2 (a) to 2 (c), the same operation as in the first embodiment is performed, and a semiconductor element, an interlayer insulating film 9, and a bottom portion are formed on a silicon substrate 1. Electrode film 1
1. After forming the core oxide film 12, the cylindrical electrode 13A, and the spacer 14, the core oxide film 12 is removed.

Next, as shown in FIG. 3A, a conductive polysilicon film is formed to a thickness of 100 nm on the entire surface and then anisotropically etched to form a double second cylindrical electrode 13B around the spacer 14. To form

Next, as shown in FIG. 3B, a 100 nm-thick silicon oxide film is formed on the entire surface, and then anisotropically etched to form a second spacer 1 around the second cylindrical electrode 13B.
4A is formed. Next, the bottom electrode 11B is formed below the cylindrical electrodes 13A and 13B by removing the bottom electrode film 11 between the cylindrical electrodes by etching while protecting the cylindrical electrodes with these spacers.

Next, as shown in FIG.
4 and 14A, the cylindrical electrodes 13A, 1A are removed.
A lower electrode 15A composed of 3B and a bottom electrode 11B is formed.

A capacitor having a triple cylindrical electrode is completed by forming a capacitor insulating film and an upper electrode on the lower electrode 15A.

As described above, according to the second embodiment, since the cylindrical electrodes are formed in three layers, the capacitance of the capacitor can be increased about twice as compared with the first embodiment. Can be. By repeating the same operation,
It is possible to form more cylindrical electrodes.

[0028]

As described above, according to the method of manufacturing a semiconductor device of the present invention, since an etching stopper is not used when forming a cylindrical electrode, the interlayer insulating film can be made thinner, and Since the core member is removed while the bottom electrode film made of polysilicon remains, the hydrofluoric acid-based etchant does not seep into the interface between the etching stopper and the lower electrode, and does not form a cavity in the interlayer insulating film. Further, when etching the bottom electrode film between the cylindrical electrodes, the inside and the outside of the cylindrical electrode are protected by the spacer made of the insulating film, so that the cylindrical electrode can be formed stably without reducing its thickness. .

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor chip for explaining a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of the semiconductor chip for explaining the first embodiment of the present invention.

FIG. 3 is a cross-sectional view of a semiconductor chip for explaining a second embodiment of the present invention.

FIG. 4 is a cross-sectional view of a semiconductor chip for explaining a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Field oxide film 3 Gate oxide film 4 Gate electrode 5 Source region 6 Drain region 7 Insulating film 7a Opening 8 Bit line 9 Interlayer insulating film 9a Opening 10 Silicon nitride film 11 Bottom electrode film 11A, 11B Bottom electrode 12 Core oxide film 13 Polysilicon film 13A, 13B Cylindrical electrode 14, 14A Spacer 15, 15A Lower electrode 16 Capacitor insulating film 17 Upper electrode 21 Polysilicon film 21A Bottom electrode 22 Core oxide film 23 Polysilicon film 23A Cylindrical electrode 24 Spacer 25 Lower electrode

Claims (5)

(57) [Claims] 1. A step of forming a bottom electrode film for a capacitor on the surface of an insulating film on a semiconductor substrate, and selectively forming a columnar core member on the bottom electrode film and then forming a conductive film on the entire surface. And anisotropically etching the conductive film to expose the surface of the core member to form a cylindrical electrode on the side wall thereof, and etching the bottom electrode film between the core members by overetching to form a film. Forming a spacer on the outer and inner side walls of the cylindrical electrode by forming an insulating film on the entire surface and anisotropically etching after removing the core member whose surface is exposed; and Forming the bottom electrode made of the bottom electrode film below the cylindrical electrode by removing the bottom electrode film exposed between the cylindrical electrodes by anisotropic etching while protecting the cylindrical electrode with a spacer; , Forming a dielectric film for a capacitor on the surface of a lower electrode composed of the cylindrical electrode and the bottom electrode. 2. After the step of forming spacers on the outer and inner walls of the cylindrical electrode, a second conductive film is formed on the entire surface and anisotropically etched to form the spacer on the outer and inner sides of the cylindrical electrode. Forming the second and third cylindrical electrodes through an insulating film on the entire surface, and then performing anisotropic etching on the outer wall of the second cylindrical electrode and the third cylindrical electrode Forming a second spacer on the inner wall of the semiconductor device. 3. The method according to claim 1, wherein the lower electrode is connected to a source or a drain of a transistor formed on the semiconductor substrate. 4. The method according to claim 1, wherein the capacitor comprises a DRAM cell. 5. The method according to claim 1, wherein the bottom electrode film and the conductive film are made of polysilicon.