JP2833979B2 - Sputtering device with collimator - Google Patents
Sputtering device with collimatorInfo
- Publication number
- JP2833979B2 JP2833979B2 JP29650993A JP29650993A JP2833979B2 JP 2833979 B2 JP2833979 B2 JP 2833979B2 JP 29650993 A JP29650993 A JP 29650993A JP 29650993 A JP29650993 A JP 29650993A JP 2833979 B2 JP2833979 B2 JP 2833979B2
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- JP
- Japan
- Prior art keywords
- collimator
- collimating
- vacuum
- semiconductor substrate
- processing chamber
- Prior art date
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- Expired - Lifetime
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はコリメートを有するスパ
ッタ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus having a collimator.
【０００２】[0002]
【従来の技術】半導体集積回路装置の高集積化が進むに
つれて、例えば図５に示す半導体基板４の主面の絶縁膜
に形成されるコンタクトホール３３の直径が約０．４μ
ｍと微細化する。そしてここにバリヤメタル膜３１や配
線膜３２をスパッタ装置により成膜するが、スパッタ粒
子の方向は一定でなくさまざまな方向に飛散する為、
（コンタクトホールの底部の膜厚ｂ）／（表面の膜厚
ａ）で定義されるボトムカバレッジ率が低くなり、コン
タクトホール３３の底部の膜厚ｂが薄くなるので配線の
コンタクト抵抗が大きくなってしまう。そしてコンタク
ト抵抗が大きければ集積回路の消費電力は増大し、処理
速度が遅くなるという問題が生じる。2. Description of the Related Art As the degree of integration of a semiconductor integrated circuit device increases, for example, the diameter of a contact hole 33 formed in an insulating film on the main surface of a semiconductor substrate 4 shown in FIG.
m. And here, the barrier metal film 31 and the wiring film 32 are formed by a sputtering apparatus.
The bottom coverage ratio defined by (thickness b at the bottom of contact hole) / (thickness a at the surface) decreases, and the thickness b at the bottom of the contact hole 33 decreases, so that the contact resistance of the wiring increases. I will. If the contact resistance is large, the power consumption of the integrated circuit increases, causing a problem that the processing speed decreases.
【０００３】この問題を解決するために、ターゲット材
から飛散するスパッタ粒子のうち斜め方向に飛散するス
パッタ粒子を排除するコリメートを、ターゲット材と半
導体基板との間に配設する図４に示すようなスパッタ装
置が、例えば特開平１−１１６０７０号公報に開示され
ている。In order to solve this problem, as shown in FIG. 4, a collimator for eliminating sputter particles scattered in an oblique direction among sputter particles scattered from a target material is provided between the target material and the semiconductor substrate. Such a sputter device is disclosed in, for example, Japanese Patent Application Laid-Open No. 1-116070.
【０００４】すなわち図４において、真空ポンプ２によ
り真空となる真空処理室１内に、半導体基板４とターゲ
ット３を配設し、さらにその間に多数の開孔部１２を有
するコリメート１１を配設する。ターゲット３からさま
ざまな方向に飛散するスパッタ粒子８のうち、斜め方向
に飛散する斜めスパッタ粒子９はコリメート１１の開孔
部１２の内壁に付着し半導体基板４に到達することはな
い。一方、垂直方向に飛散する垂直スパッタ粒子１０は
コリメート１１の開孔部１２を通過して半導体基板４に
到達する。このようにコリメート１１を配設することに
より、垂直スパッタ粒子１０によって成膜されるから、
コンタクトホールの底部膜厚と表面の膜厚とがほぼ等し
い値とすることができる。That is, in FIG. 4, a semiconductor substrate 4 and a target 3 are provided in a vacuum processing chamber 1 which is evacuated by a vacuum pump 2, and a collimator 11 having a large number of apertures 12 is provided therebetween. . Of the sputtered particles 8 scattered in various directions from the target 3, the oblique sputtered particles 9 scattered in an oblique direction adhere to the inner wall of the opening 12 of the collimator 11 and do not reach the semiconductor substrate 4. On the other hand, the vertical sputtered particles 10 scattered in the vertical direction reach the semiconductor substrate 4 through the opening 12 of the collimator 11. By arranging the collimator 11 in this manner, the film is formed by the vertical sputtered particles 10,
The thickness of the bottom of the contact hole and the thickness of the surface of the contact hole can be set to substantially the same value.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記技術
において、成膜が進むにつれ開孔部１２の内壁に付着す
スパッタ粒子により開孔部の直径ｘが狭くなり、（開孔
部の深さｙ）／（開孔部の直径ｘ）で定義される開孔部
１２のアスペクト比が変化してしまう。このアスペクト
比が変化すると成膜条件が変化するから、成膜開始から
成膜完了まで同一の条件で行う必要がある場合、それが
出来なくなってしまう。However, in the above technique, as the film formation proceeds, the diameter x of the opening becomes narrow due to sputter particles adhering to the inner wall of the opening 12, and (the depth y of the opening). The aspect ratio of the opening 12 defined by / (diameter x of the opening) changes. When the aspect ratio changes, the film forming conditions change, and if it is necessary to perform the same conditions from the start of film formation to the completion of film formation, it becomes impossible to do so.
【０００６】あるいは連続処理で成膜処理回数を重ねる
と、上記理由によりアスペクト比が変化して所定の成膜
条件での成膜作業を設定することが不可能となる。[0006] Alternatively, if the number of times of the film forming process is repeated in the continuous process, the aspect ratio changes for the above-mentioned reason, and it becomes impossible to set a film forming operation under predetermined film forming conditions.
【０００７】一方逆に、成膜条件を途中で変更させるこ
とが必要な場合、図６（Ａ）に示すアスペクト比Ａ（ｙ
1 ／ｘ）を有するコリメート１１’を図６（Ｂ）の所定
のアスペクト比Ｂ（ｙ2 ／ｘ）を有するコリメート１
１’’に変更しなければならないが、従来のスパッタ装
置ではこの所定の変更を容易に行うことが出来ない。On the other hand, when it is necessary to change the film forming conditions on the way, the aspect ratio A (y) shown in FIG.
The collimator 11 ′ having the predetermined aspect ratio B (y 2 / x) shown in FIG.
Although it must be changed to 1 '', this predetermined change cannot be easily made with a conventional sputtering apparatus.
【０００８】従来技術において、上記不都合の除去やコ
リメートの変更のために、真空を破る、すなわち真空処
理室内を真空状態から大気状態に戻す必要がある。しか
しながらこのように大気に戻すと真空処理室の内壁に付
着していたスパッタ膜のはがれが発生し、後の処理時に
半導体基板にゴミとなって悪影響を及ぼす。In the prior art, it is necessary to break the vacuum, that is, return the vacuum processing chamber from a vacuum state to an atmospheric state in order to eliminate the above-mentioned inconveniences and change the collimation. However, when the atmosphere is returned to the atmosphere as described above, the sputtered film adhered to the inner wall of the vacuum processing chamber is peeled off, and the semiconductor substrate is dusted during the subsequent processing, which has a bad influence.
【０００９】又、真空処理室の真空を破り、再度目的の
真空度まで真空引きをするには、コリメートの交換作業
を含め１時間程かかり、工数が無駄となる。In addition, it takes about one hour to break the vacuum in the vacuum processing chamber and evacuate again to the desired degree of vacuum, including replacement of the collimator, which wastes man-hours.
【００１０】[0010]
【課題を解決するための手段】本発明の特徴は、ターゲ
ット材から飛散するスパッタ粒子のうち斜め方向に飛散
するスパッタ粒子を排除するように、前記ターゲット材
と半導体基板との間に配設されたコリメートを有するス
パッタ装置において、前記コリメートは前記第１のコリ
メート部材の円筒状部とそれに挿入される前記第２のコ
リメート部材の円筒状部とで構成され、両円筒状部の出
し入れにより前記コリメート開口部の深さを変更できる
ようにしたコリメートを有するスパッタ装置にある。こ
こで、真空処理室内に前記ターゲット材、前記半導体基
板ならびに前記第１および第２のコリメート部材が配置
され、前記真空処理室外に駆動手段が配置され、真空ベ
ローズを介して前記駆動手段が前記第１および第２のコ
リメート部材の一方と結合することができる。A feature of the present invention is that a sputtered particle scattered from a target material is disposed between the target material and the semiconductor substrate so as to exclude sputtered particles scattered in an oblique direction. In the sputtering apparatus having a collimator, the collimator includes a cylindrical portion of the first collimating member and a cylindrical portion of the second collimating member inserted therein. The depth of the opening can be changed
In a sputtering apparatus having the above-described collimator. This
Here, the target material, the semiconductor substrate, and the first and second collimating members are disposed in a vacuum processing chamber, and a driving unit is disposed outside the vacuum processing chamber. It can be coupled to one of the first and second collimating members.
【００１１】[0011]
【実施例】次に図面を参照して本発明を説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
【００１２】図１は本発明の一実施例のスパッタ装置を
示す概略断面図である。真空処理室１を真空ポンプ２に
より高真空に排気し、スパッタガスを導入した後、ター
ゲット３を陰極とし半導体基板４を陽極として両者間に
高電圧を印加することによりスパッタリングを行う。FIG. 1 is a schematic sectional view showing a sputtering apparatus according to one embodiment of the present invention. After the vacuum processing chamber 1 is evacuated to a high vacuum by a vacuum pump 2 and a sputtering gas is introduced, sputtering is performed by applying a high voltage between the target 3 as a cathode and the semiconductor substrate 4 as an anode.
【００１３】ターゲット３と半導体基板４との間に配置
され、ターゲット３から飛散するスパッタ粒子８のうち
斜めスパッタ粒子９（図４）を排除して優勢的に垂直ス
パッタ粒子１０を半導体基板４上にスパッタしてそこに
成膜するための本実施例のコリメート７は、第１のコリ
メート部材５と第２のコリメート部材６とからなり、第
１のコリメート部材５の多数の円筒状部１５とそれらの
それぞれに挿入される第２のコリメート部材６の円筒状
部１６とでコリメート７の多数の開孔部１７が構成さ
れ、両円筒状部１５，１６の出し入れによりコリメート
開口部１７の深さｙを変更しそのアスペクト比を変更す
るようになっている。The oblique sputtered particles 9 (FIG. 4) among the sputtered particles 8 scattered from the target 3 are disposed between the target 3 and the semiconductor substrate 4, and the vertical sputtered particles 10 are predominantly deposited on the semiconductor substrate 4. The collimator 7 of the present embodiment for sputtering a film on the first collimating member 5 comprises a first collimating member 5 and a second collimating member 6, and a large number of cylindrical portions 15 of the first collimating member 5. The cylindrical portion 16 of the second collimating member 6 inserted into each of them constitutes a large number of apertures 17 of the collimator 7, and the depth of the collimating opening 17 is obtained by inserting and removing the cylindrical portions 15, 16. y is changed to change its aspect ratio.
【００１４】すなわち、第１のコリメート部材５を固定
し、第２のコリメート部材６を図で上下方向に駆動調節
することにより、コリメート７の開孔部１７の深さｙを
調節して、図２（Ａ）の状態のアスペクト比Ａ（ｙ1 ／
ｘ）を図２（Ｂ）の状態のアスペクト比Ｂ（ｙ2 ／ｘ）
に、真空状態を維持したまま変更する。That is, by fixing the first collimating member 5 and drivingly adjusting the second collimating member 6 in the vertical direction in the figure, the depth y of the aperture 17 of the collimator 7 is adjusted. The aspect ratio A (y 1 /
x) is the aspect ratio B (y 2 / x) in the state of FIG.
Then, change while maintaining the vacuum state.
【００１５】この駆動はモーター１８を用い、ピニオン
１９、第１のギア２０、第２のギア２１を介し、第２の
コリメート部材６に結合するネジ状のシャフト２２を上
下させて行う。この駆動部は真空処理室１の内部の発塵
を防止するために真空処理室１の外部の大気側に、第２
のコリメート部材６の外周部に沿って等間隔で複数個設
置し、上下動の動作部には第２のコリメート部材６と真
空処理室１の外囲器とを接続する真空ベローズ２３を用
いて真空と大気とを遮断する。This driving is performed by using a motor 18 to raise and lower a screw-shaped shaft 22 connected to the second collimating member 6 via a pinion 19, a first gear 20, and a second gear 21. The driving unit is provided on the outside of the vacuum processing chamber 1 to prevent dust from being generated inside the vacuum processing chamber 1.
Are installed at equal intervals along the outer periphery of the collimating member 6, and a vacuum bellows 23 that connects the second collimating member 6 and the envelope of the vacuum processing chamber 1 is used for the vertically moving operation part. Shut off vacuum and atmosphere.
【００１６】図２は第１および第２のコリメート部材
５，６の組み合せによるコリメート７の開孔部１７の状
態を示す断面図であり、図３はその断面斜視図である。FIG. 2 is a sectional view showing the state of the opening 17 of the collimator 7 formed by combining the first and second collimating members 5 and 6, and FIG. 3 is a sectional perspective view thereof.
【００１７】図２（Ａ）および図３（Ａ）は第２のコリ
メート部材６を一番上昇させた場合で第１のコリメート
部材５の円筒状部１５と第２のコリメート部材６の円筒
状部１６とが一番重なった状態となり、第１および第２
のコリメート部材５，６からなるコリメート７の開孔部
１７の深さｙ1 は最小となり、そのアスペクト比ｙ1／
ｘは最小となる。一方、図２（Ｂ）および図３（Ｂ）は
第２のコリメート部材６を一番下降させた場合で第１の
コリメート部材５の円筒状部１５の下端の高さと第２の
コリメート部材６の円筒状部１６の上端の高さとが一致
した状態となり、第１および第２のコリメート部材５，
６からなるコリメート７の開孔部１７の深さｙ2 は最大
となり、そのアスペクト比ｙ2 ／ｘは最大となる。FIGS. 2A and 3A show the case where the second collimating member 6 is raised to the highest position. FIG. 2A shows the cylindrical portion 15 of the first collimating member 5 and the cylindrical portion of the second collimating member 6. Portion 16 is in the state of being most overlapped, and the first and second portions
The depth y 1 of the aperture 17 of the collimator 7 composed of the collimating members 5 and 6 is minimized, and its aspect ratio y 1 /
x is minimized. On the other hand, FIGS. 2 (B) and 3 (B) show the case where the second collimating member 6 is most lowered and the height of the lower end of the cylindrical portion 15 of the first collimating member 5 and the second collimating member 6 And the height of the upper end of the cylindrical portion 16 of the first and second collimating members 5,
The depth y 2 of the aperture 17 of the collimator 7 made of 6 is maximum, and its aspect ratio y 2 / x is maximum.
【００１８】成膜が進んで開孔部内にスパッタ粒子が付
着して開孔部の直径ｘが小になっていっても、一定のア
スペクト比を維持して一定の条件で成膜を続けるために
は、始めに図２（Ｂ），図３（Ｂ）側に設定し、成膜の
進行に応じて徐々に図２（Ａ），図３（Ａ）の方向に駆
動させｙを小にしていけばよい。尚、両円筒状部１５，
１６間はそこに付着したスパッタ粒子と接触しない様に
十分な隙間になっている。 Even if the diameter x of the opening is reduced due to the sputtered particles adhering into the opening due to the progress of the film formation, the film formation is continued under a certain condition while maintaining a constant aspect ratio. 2 (B) and 3 (B), and gradually drive in the directions of FIGS. 2 (A) and 3 (A) as the film formation progresses to decrease y. I should go. In addition, both cylindrical parts 15,
Avoid contact with sputtered particles adhering there between 16
There is enough clearance.
【００１９】一方、成膜条件を途中で変更させることが
必要である場合は、図２（Ａ），図３（Ａ）の状態と図
２（Ｂ），図３（Ｂ）の状態との間の所定の状態にその
都度変更するように駆動させればよい。On the other hand, when it is necessary to change the film forming conditions on the way, the state shown in FIGS. 2 (A) and 3 (A) and the state shown in FIGS. 2 (B) and 3 (B) are changed. What is necessary is just to drive so that it may change to the predetermined state between each time.
【００２０】いずれの場合も真空処理室１内を真空に維
持したままコリメート７の開孔部１７の深さｙの調整が
可能となる。In any case, the depth y of the opening 17 of the collimator 7 can be adjusted while maintaining the vacuum processing chamber 1 in a vacuum.
【００２１】なお上記実施例では上の第１のコリメート
部材５を固定し下の第２のコリメート部材６を移動させ
る構成を例示したが、上の第１のコリメート部材５を移
動させ下の第２のコリメート部材６を固定する構成にす
ることもできる。さらに場合によっては両コリメート部
材５，６を移動可能にしてもよい。In the above-described embodiment, the structure in which the upper first collimating member 5 is fixed and the lower second collimating member 6 is moved is exemplified. However, the upper first collimating member 5 is moved and the lower first collimating member 5 is moved. It is also possible to adopt a configuration in which the two collimating members 6 are fixed. Further, in some cases, both collimating members 5 and 6 may be movable.
【００２２】[0022]
【発明の効果】以上説明した様に本発明は、垂直スパッ
タ粒子により半導体基板の高低部に一様の膜厚に成膜す
るコリメートを２枚のコリメート部材の組合せにより構
成し、その開孔部の深さを任意に変更する事ができる
為、経時変化に対し常に一定のアスペクト比を保つこと
ができる。As described above, the present invention comprises a collimator formed by combining two collimating members to form a uniform film thickness on the upper and lower portions of a semiconductor substrate by vertical sputtered particles. Can be arbitrarily changed, so that a constant aspect ratio can always be maintained with time.
【００２３】更に、成膜条件により所定の異なるアスペ
クト比に対応することができるという効果を有する。Further, there is an effect that it is possible to cope with predetermined different aspect ratios depending on film forming conditions.
【００２４】また上記アスペクト比の一定維持やアスペ
クト比の変更を、真空処理室内を真空に維持したまま行
うことことができるから、真空処理室の内壁に付着して
いるスパッタ膜のはがれによるゴミの悪影響を発生させ
ず、かつ作業工数の無駄を無くすことができる。Further, since the aspect ratio can be kept constant or the aspect ratio can be changed while maintaining the vacuum in the vacuum processing chamber, dust generated by peeling of the sputtered film adhered to the inner wall of the vacuum processing chamber can be reduced. It is possible to prevent the occurrence of adverse effects and to avoid wasting man-hours.
【図１】本発明の一実施例のスパッタ装置の概略を示し
た断面図である。FIG. 1 is a sectional view schematically showing a sputtering apparatus according to one embodiment of the present invention.
【図２】本発明の一実施例のコリメートの動作を示した
断面図である。FIG. 2 is a sectional view showing an operation of a collimator according to one embodiment of the present invention.
【図３】本発明の一実施例のコリメートの動作を示した
断面斜視図である。FIG. 3 is a sectional perspective view showing the operation of the collimator according to one embodiment of the present invention.
【図４】従来技術のスパッタ装置の概略を示した断面図
である。FIG. 4 is a cross-sectional view schematically showing a conventional sputtering apparatus.
【図５】半導体基板のコンタクトホールにスパッタによ
り成膜した状態を例示した断面図である。FIG. 5 is a cross-sectional view illustrating a state where a film is formed in a contact hole of a semiconductor substrate by sputtering.
【図６】従来技術のコリメートを示した断面図である。FIG. 6 is a sectional view showing a conventional collimator.
１ 真空処理室 ２ 真空ポンプ ３ ターゲット ４ 半導体基板 ５ 第１のコリメート部材 ６ 第２のコリメート部材 ７ コリメート ８ スパッタ粒子 ９ 斜めスパッタ粒子 １０ 垂直スパッタ粒子 １１（１１’，１１’’） コリメート １２ コリメート１１の開孔部 １５ 第１のコリメート部材５の円筒状部 １６ 第２のコリメート部材６の円筒状部 １７ コリメート７の開孔部 １８ モーター １９ ピニオン ２０ 第１のギア ２１ 第２のギア ２２ シャフト ２３ 真空ベローズ ３１ バリアメタル膜 ３２ 配線膜 ３３ コンタクトホール REFERENCE SIGNS LIST 1 vacuum processing chamber 2 vacuum pump 3 target 4 semiconductor substrate 5 first collimating member 6 second collimating member 7 collimating 8 sputtered particle 9 oblique sputtered particle 10 vertical sputtered particle 11 (11 ′, 11 ″) collimating 12 collimating 11 15 The cylindrical part of the first collimating member 5 16 The cylindrical part of the second collimating member 6 17 The opening of the collimator 7 18 Motor 19 Pinion 20 First gear 21 Second gear 22 Shaft 23 Vacuum bellows 31 Barrier metal film 32 Wiring film 33 Contact hole
フロントページの続き (56)参考文献 特開 昭61−9574（ＪＰ，Ａ) 特開 昭61−53717（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C23C 14/34 H01L 21/203Continuation of the front page (56) References JP-A-61-9574 (JP, A) JP-A-61-53717 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C23C 14 / 34 H01L 21/203
Claims (2)
のうち斜め方向に飛散するスパッタ粒子を排除するよう
に、前記ターゲット材と半導体基板との間に配設された
コリメートを有するスパッタ装置において、前記コリメ
ートは第１のコリメート部材の円筒状部とそれに挿入さ
れる第２のコリメート部材の円筒状部によって構成され
るコリメート開口部を有し、両円筒状部の出し入れによ
りコリメート開孔部の深さを変更できるようにしたこと
を特徴とするコリメートを有するスパッタ装置。1. A sputtering apparatus having a collimator disposed between a target material and a semiconductor substrate so as to exclude sputter particles scattered in an oblique direction from sputter particles scattered from a target material. Is the cylindrical portion of the first collimating member and
It is constituted by a cylindrical portion of the second collimating member
The collimating opening has a
Ri sputtering apparatus having a collimator, characterized in that to be able to change the depth of the collimator apertures.
半導体基板ならびに前記第１および第２のコリメート部
材が配置され、前記真空処理室外に駆動手段が配置さ
れ、真空ベローズを介して前記駆動手段が前記第１およ
び第２のコリメート部材の一方と結合していることを特
徴とする請求項１に記載のコリメートを有するスパッタ
装置。 2. The apparatus according to claim 1 , wherein the target material, the semiconductor substrate, and the first and second collimating members are disposed in a vacuum processing chamber, and driving means is disposed outside the vacuum processing chamber, and the driving means is disposed via a vacuum bellows. The sputtering apparatus having a collimator according to claim 1, wherein the sputtering apparatus is coupled to one of the first and second collimating members.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29650993A JP2833979B2 (en) | 1993-11-26 | 1993-11-26 | Sputtering device with collimator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29650993A JP2833979B2 (en) | 1993-11-26 | 1993-11-26 | Sputtering device with collimator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07150347A JPH07150347A (en) | 1995-06-13 |
| JP2833979B2 true JP2833979B2 (en) | 1998-12-09 |
Family
ID=17834466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29650993A Expired - Lifetime JP2833979B2 (en) | 1993-11-26 | 1993-11-26 | Sputtering device with collimator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2833979B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6592728B1 (en) * | 1998-08-04 | 2003-07-15 | Veeco-Cvc, Inc. | Dual collimated deposition apparatus and method of use |
| JP4474109B2 (en) * | 2003-03-10 | 2010-06-02 | キヤノン株式会社 | Sputtering equipment |
| WO2017158978A1 (en) * | 2016-03-14 | 2017-09-21 | 株式会社東芝 | Processing device and collimator |
| TWI633197B (en) * | 2016-05-24 | 2018-08-21 | 美商伊麥傑公司 | High-precision shadow-mask-deposition system and method therefor |
| CN109642313B (en) * | 2016-05-24 | 2021-03-09 | 埃马金公司 | High-precision shadow mask deposition system and method |
-
1993
- 1993-11-26 JP JP29650993A patent/JP2833979B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07150347A (en) | 1995-06-13 |
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