JP2914644B2 - Wiring method for integrated circuit, wiring method for burying holes or grooves in integrated circuit, and multi-chamber substrate processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring method for an integrated circuit such as an LSI and a substrate processing apparatus used for the wiring method. In the specification of the present application, "integrated circuit"
Is widely used in the meaning of "general electronic components manufactured by integrating microcircuits on a substrate surface". Therefore, the "integrated circuit" includes a fine circuit and the like in a liquid crystal display panel.

[0002]

2. Description of the Related Art As is well known, integrated circuits including various memories and logic elements are manufactured by wiring fine circuits on the surface of a semiconductor substrate. Wiring on the substrate surface requires a film forming technique for depositing a thin film made of a desired conductive material on the substrate surface. Up to now, the film forming technique for wiring has been by sputtering such as magnetron sputtering. Has become mainstream. In terms of materials, Al or an Al alloy is often used, and typically, an Al-Si-Cu alloy is most frequently used.

The progress of integrated circuit technology in recent years has been remarkable, and the degree of integration has dramatically increased from LSI to VLSI and ULSI. The process of high integration is a process of “miniaturization of wiring” from the viewpoint of wiring technology, and the line width of a circuit is becoming narrower. At the same time, as seen in multi-layer wiring and the like, the circuit is becoming more complicated, three-dimensional, and the like, as is seen in the background of higher functionality of the circuit.

[0004]

In the above-mentioned integrated circuits with higher integration and higher functionality, the limitations of the wiring technology which has been the mainstream in the past have come to be felt. I have. For example, in the field of wiring of interlayer through-holes in the case of adopting a multilayer wiring structure and wiring of a contact hole for a transistor electrode (to be precise, "embedding"), the limitations of the conventional wiring by sputtering have been pointed out. That is, since film deposition by sputtering is so-called "isotropic" on the substrate surface, it is difficult to deposit a film only inside a hole or a groove. The deposited film is formed so as to rise from the edge of the hole or the groove, and a gap called a “void” is formed inside the hole or the groove.

[0005] In the above-mentioned hole or groove buried wiring,
In the wiring technology from 4M to 16M, the aspect ratio of the hole (hole depth / hole diameter, in the case of a groove, the groove depth /
Although the width of the groove tends to become larger, the conventional general sputtering as described above may have a limit of an aspect ratio of about 1 (line width of about 1 to 0.8 μm by design rule). It is said.

[0006] Under such circumstances, attempts have been made to improve the reflow by irradiating a laser beam after depositing the sputtered film, but the aspect ratio is still 2.
(Shi-Qing Wang, "Filling of conta
cts and interconnects withCu under XeCl excimer la
ser ", J. Vac. Sci. Technol. B 10 (1), Jan / Feb 1992,
See P160). Also, a technique of collimated sputtering (also referred to as coherent sputtering) in which sputtered particles are incident on a substrate in the same direction as the flight direction of sputtered particles has been actively studied in this field.
It has been reported that embedding of aspect ratios greater than that possible is possible (FH Baumann et al, "APPLICATION AN
D CONSTRAINTS COLLIMATED SPUTTERING "June 8-9, 199
3 See VMIC Conference, P412-417). However,
In the collimated sputtering, since there is a loss of sputtered particles at the collimator, the film formation speed is slow, and this point is expected to be the biggest obstacle to practical use. In the report mentioned above, the point of throughput is completely ignored in the simulation.

[0007] On the other hand, attempts have been made to apply vapor phase chemical growth (hereinafter, CVD) to such buried wiring in holes or grooves. As a method using CVD, a method using a selective CVD method utilizing the growth of a CVD film only on a specific base material has been most actively studied, and as a technique for filling a contact hole using W or the like. It is considered to occupy the position closest to practical use. However, this CVD also has problems such as film quality such as high wiring resistance and problems such as low throughput compared to sputtering, and it is difficult to say that it is a technique that solves all the problems.

[0010] Next, the problem in the wiring material will be described. The problem of the wiring resistance is emerging as a general theory. That is, when the wiring has a line width of about 1 micron or less, the current density generally increases and the wiring resistance cannot be ignored. In particular, in an integrated circuit such as a large-scale logic LSI, wiring delay due to wiring resistance has become a problem.
The reduction in wiring resistance has become an important elemental technology for higher integration. In this regard, the current Al alloy wiring is beginning to feel its limitations, and a search for a wiring material having a lower resistance than Al is being conducted. Further, with miniaturization and high integration, the problem of migration resistance has also become apparent.
That is, the electromigration caused by the contamination of impurities and the stress migration caused by the stress of the deposited film are inevitable problems as the current density increases. Although the migration phenomenon itself is not well understood, the possibility of improving the migration resistance by changing the material is also being actively studied.

The present invention has been made in consideration of the above-described problems in the process and material in the wiring technology as described above. It aims to provide next generation wiring technology.

[0010]

In order to achieve the above object, a wiring method according to claim 1 of the present application is a wiring method performed when a fine circuit is formed on a substrate surface to manufacture an integrated circuit. A substrate to be wired is placed in a vacuum chamber, a target made of a material to be wired is placed in the vacuum chamber, a predetermined electric field and a magnetic field are set in a space facing the target, and sputter discharge is performed in that space. Is generated, the sputter discharge is maintained only by ionization of the material of the sputtered target, and the target current density is reduced to 1
A step of causing the sputtered target material to reach and adhere to the substrate surface while suppressing the current to 100 mA or less per square centimeter. In addition, in order to achieve the same object, the claims of the present application
Embedded wiring method according to 2, in the structure described in claim 1, wherein the surface of the substrate are formed a predetermined hole or groove, reach the material of the sputtered target surface of said substrate Then, the hole or groove is buried and wired. Further, in order to achieve the same object, the method according to claim 3 of the present application uses the method according to claim 1 or
3. The method according to 2 , wherein the sputtering film forming chamber, a film forming chamber exhaust system for exhausting the inside of the sputter film forming chamber, a gas introducing system for introducing a discharge gas into the sputter film forming chamber, Substrate processing provided with a preliminary chamber disposed adjacent to the chamber, a preliminary chamber exhaust system that exhausts the inside of the preliminary chamber, and a gate valve that closes and isolates an entrance between the sputter deposition chamber and the preliminary chamber. Using the apparatus, the substrate is placed in the preparatory chamber, the preparatory chamber is evacuated, and a discharge gas is introduced into the sputter deposition chamber with the gate valve closed to generate a sputter discharge by the discharge gas. Then, the supply of the discharge gas is stopped and the inside of the sputter film formation chamber is evacuated, and the discharge using only the sputter material is maintained in a state where the inside of the sputter film formation chamber has reached a predetermined degree of vacuum or less. Open board It has a configuration that includes the step of sputtering and carried into the sputtering chamber. Furthermore, in order to achieve a similar object, a substrate processing apparatus according to claim 4 of the present application is a substrate processing apparatus used in the method according to claim 1, 2, or 3 , wherein A processing chamber for performing processing before or after sputter deposition in a sputter deposition chamber, and a spare chamber interposed between the sputter deposition chamber and the processing chamber; Self-sustained sputtering in which the discharge is maintained only by the discharged material, and further, a gate valve is provided between the sputter deposition chamber and the preliminary chamber. It is configured to be opened when sputtering is performed.

[0011] In the invention of each of the above constructions, the sputter discharge is maintained only by ionization of the sputtered target material. Then, there is no discharge gas such as argon in the discharge space, and the material of the sputtered target is directly scattered by these gases toward the substrate.

[0012]

Embodiments of the present invention will be described below. FIG.
1 is a front view schematically illustrating a substrate processing apparatus for implementing a wiring method according to the present invention.

The substrate processing apparatus shown in FIG. 1 includes a sputter deposition chamber 1, a deposition chamber exhaust system 2 for exhausting the inside of the sputter deposition chamber 1, and a gas for introducing a discharge gas into the sputter deposition chamber 1. Introducing system 3, preliminary chamber 4 arranged adjacent to sputtering film forming chamber 1, and preliminary chamber exhaust system 5 for exhausting the inside of preliminary chamber 4
And a gate valve 6 that closes an entrance and exit between the sputter deposition chamber 1 and the preliminary chamber 4 to isolate them. A target 11, a substrate holder 12 arranged to face the target 11, and a magnetron cathode 13 arranged behind the target 11 are arranged inside the sputtering film forming chamber 1. The sputter deposition chamber 1 is almost the same as that in a normal sputtering apparatus employing a flat plate magnetron structure, and therefore a detailed description is omitted.

One of the features of the wiring method of this embodiment is that a discharge mechanism in the sputtering film forming chamber 1 shown in FIG.
The point is that a self-sustaining sputter discharge is employed. The self-sustained sputter discharge was the subject of a petition under Article 30, Paragraph 4 of the Patent Act of the present application.
And "The Lecture Proceedings No. 2, page 393". The self-sustaining sputter discharge is intended to maintain the discharge only by ionization of the sputtered target material.

The conventional sputter discharge phenomenon is a process in which ionized discharge gas molecules are accelerated by an electric field and collide with a target, and the collision repels particles from the target. Not only the material particles but also a considerable amount of electrons are repelled from the target. The electrons ionize the neutral discharge gas existing in the discharge space, and the ionized discharge gas further sputters the target. The discharge is maintained by repeating such a process.
In the conventional general sputter discharge, as described above, the existence of discharge gas molecules such as argon existing in the discharge space is indispensable. However, in the self-sustained sputter discharge, the discharge is maintained only by the ionization of the sputtered target material, and no intervening discharge gas is required.

One condition under which self-sustained sputter discharge is possible is that the sputtering rate (the number of atoms sputtered by the incidence of one ion) is large. For example, assuming that the sputtering rate is S and the monovalent cation of the current density j collides with the target, the sputtered particle flux to be repelled is given by Sj. It is assumed that this sputtered particle bundle is ionized with a probability of α in the discharge space, and that only the ratio of β in the ionized sputtered particles is accelerated and returns to the target again. The current density of the ions returning to this target is given by βαSj. If the discharge is to be maintained only by the material sputtered from the target, this βαSj must exceed the original ion current j from which the ion current was generated. Since it is clear that α and β are 1 or less, the sputtering rate S must be at least 1 or more.

The sputtering rate itself varies depending on the type of ions to be incident, but it is about 1 in the case of sputtering with Al argon ions, which is currently the mainstream, (Ritsuo Asamaki, “Basics of Thin Film Preparation (Second Edition)”). (Published by Nikkan Kogyo Shimbun)
155-157), and the self-sustained discharge is almost impossible in the case of the sputtering method currently used. Those with a higher sputtering rate than Al are Cu, A
g, Au, etc. (see pages 156-157), and these materials are suitable for this type of discharge.

The greatest advantage of such a self-sustaining sputter discharge is that impurities in the formed wiring are drastically reduced (theoretically zero). That is, an essential disadvantage of sputtering film formation using a discharge gas such as argon is that gas molecules involved in the discharge mix into the film and become impurities in the wiring. The mixed impurities increase the wiring resistance and cause electromigration. For this reason, it was common to evaluate the technique of sputtering itself as saying, "In the coming 16M and 64M era, we will have to step down as the leading role in wiring technology."

On the other hand, the wiring material of the integrated circuit has a problem of low resistance as described above. The inventor of the present application has reported that Cu, Ag,
It has been noticed that Au and the like are materials having lower resistance than Al. That is, Au is 2.35 μΩcm, and Cu is 1.35 μΩcm.
67 μΩcm, Ag is 1.59 μΩcm. Also,
The second of "Proceedings of the 1993 Electrochemical Society Symposium"
At page 7, line 1-2, it is also reported that the Cu-based material is expected to have about 60 times the electromigration resistance than the Al-based material.

The inventor of the present application has interpreted that these circumstances have taken the opportunity to point out the possibility of the next generation wiring technology. That is, in terms of material, Cu, Ag, A is used instead of conventional Al.
If a material such as u is used and the above-described self-sustained type sputter discharge is used in the process, impurities are reduced, wiring resistance is reduced, and wiring with high migration resistance is obtained. It will be ideal as a wiring technology.

Next, the wiring method of this embodiment will be described in detail using the above-described sputtering apparatus shown in FIG. First, the substrate 10 is carried into the preparatory chamber 4 with the gate valve 6 closed, the preparatory chamber in / out valve 41 is closed, and the preparatory chamber exhaust system 5 exhausts the inside of the preparatory chamber 4 to a predetermined degree of vacuum. Further, a gas for discharge (for example, argon) is introduced into the sputtering film forming chamber 1 by the gas introduction system 3 and a necessary voltage is applied between the magnetron cathode 13 and the substrate holder 12 to use the gas for discharge. A similar sputter discharge is generated.

Next, the conductance valve of the gas introduction system 3 is closed, the supply of gas is stopped, and the gas is exhausted again.
The degree of vacuum is maintained at 10 ⁻⁵ Torr or less. Even after the gas supply is stopped and the gas is exhausted, the discharge is maintained by the above-described mechanism. That is, the discharge continues as a self-sustaining type. Then, after the discharge state is stabilized, the gate valve 6 is opened, the substrate 10 is carried into the sputtering film forming chamber 1, and is placed on the substrate holder 12, and the film is formed by self-sustained sputter discharge. The material of the target 11 is appropriately selected from Cu, Ag, Au, an alloy thereof, or the like. That is, a material having a large sputtering rate that allows the self-sustained sputter discharge and having low resistance and excellent migration resistance is used as the target material.

The conductive material formed as described above is:
It goes without saying that the wiring is patterned through appropriate steps such as exposure and etching. As described above, the reason why a sputter discharge similar to the conventional one using a discharge gas is first generated is, of course, because it is difficult to operate a self-sustained sputter discharge from the beginning. Also in this case, since the substrate 10 is disposed in the preliminary chamber 4 isolated from the sputter deposition chamber 1 during the operation of the discharge using the discharge gas, the contamination of the substrate by the discharge gas is completely prevented. I have.

An apparatus having a shutter mechanism in the sputtering film forming chamber 1 is also preferably employed. That is, it is preferable to provide a mechanism capable of covering the substrate 10 arranged in the sputtering film forming chamber 1 and disposing the shutter so that the substrate 10 cannot be seen from the target 11.
In the case of an apparatus having a shutter mechanism, the substrate 10 may be carried into the sputter deposition chamber 1 from the beginning.
In this case, during the operation of the initially performed sputter discharge using the discharge gas, the shutter is closed, and after shifting to the self-sustained type sputter discharge, the shutter is opened to perform sputter deposition. Good results are obtained as well.

Next, an embodiment of the second aspect of the present invention will be supplementarily described. As described in the related art, in recent integrated circuits, there is an increasing need to perform wiring such that deep holes or grooves having an aspect ratio exceeding 2 are filled with a conductive material. The invention of claim 2 utilizes the invention of claim 1 for such an embedded wiring.

According to the study of the inventor of the present invention, the main cause of the fact that conventional general sputter discharge is not suitable for filling holes or grooves having a high aspect ratio is scattering of sputter atoms by discharge gas molecules. It has been found. That is, the material of the sputtered target flies in the discharge space toward the substrate, but a large number of discharge gas molecules are present in the discharge space, and the sputtered atoms are scattered by the discharge gas molecules. I will. In particular, in the case of embedding a hole or groove, even if sputtered atoms fly toward the hole or groove,
If the discharge gas molecules are present above the holes or grooves, the gas molecules are scattered by the discharge gas molecules, making it difficult to reach the inside of the holes or grooves.

However, as described above, in the self-sustained sputter discharge, the discharge is maintained only by ionization of the sputtered target material, and therefore, there is no discharge gas molecule such as argon in the discharge space. In principle, it is zero. Therefore, the scattering of the sputtered atoms by the discharge gas molecules as described above is eliminated, and the sputtered atoms flying toward the hole or groove surely reach the inside of the hole or groove and deposit. As a result, it is possible to reliably bury the high aspect ratio holes or grooves and wire them. Furthermore, according to this method, there is no member that loses sputter atoms during flight, such as collimated sputter, so that high efficiency and high throughput can be expected.

Next, an embodiment of the third aspect of the present invention will be supplementarily described. As a matter of fact, it is not generally known that the self-sustained sputter discharge requires a considerably large discharge current in order to maintain the discharge with only the sputtered material, which is a disadvantage that is unexpected in practical use. become. That is, in the wiring of an integrated circuit, the film thickness is generally 0.5 to
It is about 1 μm. From the viewpoint of controllability of the mechanical movement of the apparatus, such as the transfer of the substrate and the drive of the shutter, the film production time that can be controlled with the required accuracy is 1 second or more. And it is difficult to ensure reproducibility. Further, from the viewpoint of the film thickness distribution, a uniformity of ± 5% or less is desired. Under these circumstances, the controllable film forming rate is about 3 μm / min or less.

Factors that affect the deposition rate when a thin film is formed by sputtering are (1) the geometric relative positional relationship between the target and the substrate, and (2) the power density applied to the target (or the target). (Applied voltage and target surface current density) and (3) sputtering pressure (gas pressure). Of these, self-sustaining sputter discharge
Since it is performed in the absence of a discharge gas such as argon,
There is no need to consider the sputtering pressure of (3).

When the film forming speed is too high,
By changing the relative positional relationship between the target and the substrate, which is the first factor, and increasing the distance between the target and the substrate, the deposition rate can be reduced. However, if the distance between the target and the substrate is too large, the uniformity of the film thickness distribution may be degraded. In addition, a large amount of the film that does not adhere to the substrate adheres to the wall surface of the sputtering chamber or the like or the surface of the indoor structure, thereby deteriorating the effective utilization rate of the sputter material taken out of the target, and peeling off an unnecessary film to remove dust. It becomes easy to be a source. Dust (fine particles) are most hated in the integrated circuit manufacturing process. For these reasons, it is impractical to increase the distance between the target and the substrate to lower the film speed. After all, a practical means for adjusting the film formation rate is the control of the power density or the current density on the target surface in (2).

Here, in the above-mentioned "Preliminary Lectures of the 40th Lecture Meeting on Applied Physics, No. 2, page 393", it is described that "self-sustaining sputter is formed at a critical current value of 8.5 A or more". As described above, one lower limit of the discharge current in the self-sustained sputter discharge is 8.5A. However, according to the study by the inventors, when the wiring is performed by discharging with a current much larger than the current of 8.5 A, the above 3 μm is required.
It has been found that the film formation speed is much higher than m / min, which is almost unsuitable for wiring of integrated circuits.

According to the study by the inventors, if the discharge current density (the value obtained by dividing the current flowing through the target by the surface area of the target) is set to 100 mA or less,
It has been found that a more controllable film deposition rate can be obtained. Of course, the film formation speed depends not only on the current density but also on the material to be deposited and the state of the underlayer, etc.Therefore, a current density higher than this value may be sufficient. Thickness controllability can be ensured, and it is sufficiently practical for wiring of integrated circuits. Although the above description is an example of controlling the current density, there is also a method of controlling the power density by adjusting the discharge voltage (target applied voltage).

Next, an embodiment of the invention will be described. FIG. 2 is a schematic plan view for explaining an embodiment of the present invention. The invention of claim 5 is the invention of claims 1, 2, 3
Or a multi-chamber substrate processing apparatus suitable for carrying out the method 4; as shown in FIG. 2, a sputter film forming chamber 1 is performed before or after the sputter film formation in the sputter film forming chamber 1 It has a processing chamber 7 for performing processing, and a preliminary chamber 4 interposed between the sputter deposition chamber 1 and the processing chamber 7. For example, when a Cu wiring film is formed on a Si substrate, C is used to prevent diffusion of Cu into underlying Si.
Before the u wiring, a thin film of titanium nitride or the like may be deposited thinly. In such a case, one of the processing chambers 7 shown in FIG. 2 is configured to deposit titanium nitride by a CVD method or the like. If it is necessary to reflow the deposited film by heating after the deposition of the wiring material for flattening or the like, one of the processing chambers 7 is configured to have a predetermined heating mechanism.

One of the features of the multi-chamber substrate processing apparatus shown in FIG. 2 is that a plurality of processing chambers 7 are arranged around a common pre-chamber 4 arranged in the center.
According to such a layout, space is effectively saved, and the entire apparatus is simplified because the transport system is not complicated. The spare room 4 has two load lock rooms 8.
Are arranged adjacent to each other, and the substrate enters and leaves the preliminary chamber 4 via the load lock chamber 8. A gate valve (not shown) is disposed at the boundary between the respective chambers. The gate valve is appropriately closed during the processing, so that the sputter deposition chamber 1 and the respective processing chambers 7 have an independent atmosphere.
This prevents contamination due to interference between the atmospheres of the respective rooms.

The structure of the sputter deposition chamber 1 and the operational relationship between the sputter deposition chamber 1 and the preliminary chamber 4 are the same as those in the embodiment shown in FIG. According to the substrate processing apparatus shown in FIG. 2, it is possible to continuously and efficiently carry out necessary steps before and after the steps described in claim 1, 2, 3, or 4, and to achieve a process with extremely high productivity. Enable.

Further, in wiring using the apparatus shown in FIG. 1 or FIG. 2, sputtering film formation may be performed with the gate valve opened. That is, since the discharge gas is not originally present in the self-sustained sputter discharge, there is no fear of the discharge gas leaking even if the film formation is performed with the gate valve opened. In this case, there are the following merits when performing sputter film formation with the gate valve opened. That is, first of all, the sputter deposition chamber is usually evacuated by a dedicated exhaust pump, but when the gate valve is opened, the sputter deposition chamber can be exhausted by the spare pump in addition to the dedicated pump. Since the gas is evacuated, the effective evacuation speed of the sputter deposition chamber is increased, and the background pressure of the vacuum during the deposition is reduced, so that a high quality thin film can be formed. Second, since the gate valve is open, there is no need to open and close the gate valve when transporting the substrate to the preliminary chamber after film formation. This saves time for opening and closing,
The productivity of the entire device is improved. In particular, when it is necessary to continuously process a large number of substrates at a high speed, the configuration of the present invention that can sequentially carry in and out substrates without opening and closing the gate valve is very significant.

[0037]

As described above, according to the wiring method of the first aspect of the present invention, since the wiring material is deposited while maintaining the discharge only with the sputtered target material, the discharge gas Is not mixed into the wiring material as an impurity. As a result, the wiring resistance is reduced, and a wiring having high migration resistance is obtained, which is ideal as a next-generation wiring technology in view of sub-half microns.
Also, since the deposition rate can be kept within a controllable range,
The controllability and reproducibility of the film thickness can be reliably ensured, which greatly contributes to the practical use of these methods. According to the buried wiring method of the second aspect , in addition to the effect of the first aspect , there is no scattering of the sputtered material by the discharge gas molecules, and the sputtered material flying toward the hole or the groove is directly assured. The hole or groove reaches the inside of the hole or groove and is deposited, so that the hole or groove with a high aspect ratio can be reliably embedded and wired. Therefore, it will be optimal for the wiring of an integrated circuit in the future in which a multilayer wiring structure or the like is used. According to the third aspect of the present invention, in addition to the effect of the first or second aspect , during the operation of the discharge using the discharge gas, the substrate is placed in the preliminary chamber isolated from the sputter deposition chamber. Since it is arranged, the contamination of the substrate by the discharge gas is completely prevented, and even when the discharge using the discharge gas is performed first, high resistance and low migration resistance due to mixing of the discharge gas molecules can be achieved. The problem is avoided. Further, according to the substrate processing apparatus of the fourth aspect , it is possible to continuously and efficiently perform the necessary steps before and after the steps described in the first, second, and third aspects, and to achieve extremely high productivity. Enable high process. Since the gate valve between the sputter deposition chamber and the preliminary chamber is opened when self-sustained sputtering is performed, the effective pumping speed of the sputter deposition chamber increases, and a high-quality thin film can be formed. In addition, the time required for opening and closing is eliminated, and the productivity of the entire apparatus is improved.

[Brief description of the drawings]

FIG. 1 is a front view schematically illustrating a substrate processing apparatus for carrying out a wiring method according to the present invention.

FIG. 2 is a schematic plan view illustrating an embodiment of the invention according to claim 5;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Sputter film formation room 2 Film formation room exhaust system 3 Gas introduction system 4 Preliminary room 5 Preliminary room exhaust system 6 Gate valve 7 Processing room

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hidekazu Okabayashi 5-7-1 Shiba, Minato-ku, Tokyo Inside NEC Corporation (72) Inventor Keizo Kinoshita 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Tatsuo Asama 2-56-10 Kinugaoka, Hachioji-shi, Tokyo (72) Inventor Naokichi Hosokawa 5-81, Yotsuya, Fuchu-shi, Tokyo Nidec Anelva shares In-company (56) References JP-A-54-149338 (JP, A) JP-A-3-95952 (JP, A) JP-A-4-2211072 (JP, A) Table 5-5-507963 (JP, A) ) Surface and Coating Technology, 49, (1991), pp. 290-292 Proc. 8th Int. Vac. Cong. , 1980, Le Video, Suppl. 201 pp. 11-14 Proceedings of the 40th Alliance Lecture Meeting on Applied Physics 2, p. 393, 29a-R-12 (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/203 C23C 14/35 H01L 21/3205 H01L 21/822 H01L 27/04 H01L 21/28-21 / 288 H01L 21/44-21/445 H01L 29/40-29/43

Claims (4)

(57) [Claims] 1. A wiring method performed when forming a fine circuit on a substrate surface to manufacture an integrated circuit, wherein a substrate to be wired is placed in a vacuum chamber, and a target made of a material to be wired is mounted. Placed in the vacuum chamber, set a predetermined electric field and magnetic field in the space facing the target to generate sputter discharge in that space, and maintain the sputter discharge only by ionization of the material of the sputtered target, A method of interconnecting an integrated circuit, comprising the step of causing a sputtered target material to reach and adhere to the substrate surface while keeping the current density at or below 100 milliamps per square centimeter. 2. A predetermined hole or groove is formed on a surface of the substrate, and the sputtered target material is allowed to reach the surface of the substrate to bury and fill the hole or groove. The wiring method for an integrated circuit according to claim 1 . 3. The method according to claim 1 or 2 , wherein
A sputter film forming chamber, a film forming chamber exhaust system for exhausting the inside of the sputter film forming chamber, a gas introducing system for introducing a discharge gas into the sputter film forming chamber, and a spare disposed adjacent to the sputter film forming chamber. A substrate processing apparatus including a chamber, a pre-chamber exhaust system for exhausting the inside of the pre-chamber, and a gate valve for closing and isolating an entrance between the sputter film formation chamber and the pre-chamber is used. Is disposed and the preparatory chamber is evacuated, and a discharge gas is introduced into the sputter deposition chamber with the gate valve closed to cause sputter discharge by the discharge gas, and thereafter, the supply of the discharge gas is stopped. At the same time, the inside of the sputter deposition chamber is evacuated, and the discharge of only the sputtered material is maintained in a state where the inside of the sputter deposition chamber has reached a predetermined degree of vacuum or less. Then, the gate valve is opened to put the substrate into the sputter deposition chamber. Carry in Method characterized by comprising the step of sputtering Te. 4. A substrate processing apparatus used in the method according to claim 1, 2 or 3 , wherein a sputter deposition chamber and a process performed before or after the sputter deposition in the sputter deposition chamber are performed. A processing chamber, and a preliminary chamber interposed between the sputter deposition chamber and the processing chamber, wherein the sputter deposition chamber performs self-sustained sputtering in which discharge is maintained only by the sputtered material. And a gate valve is provided between the sputter deposition chamber and the preliminary chamber, and the gate valve is opened when the self-sustained sputtering is performed. Chamber substrate processing equipment.