JP2820197B2 - Resin-sealed semiconductor light emitting device - Google Patents
Resin-sealed semiconductor light emitting deviceInfo
- Publication number
- JP2820197B2 JP2820197B2 JP7023212A JP2321295A JP2820197B2 JP 2820197 B2 JP2820197 B2 JP 2820197B2 JP 7023212 A JP7023212 A JP 7023212A JP 2321295 A JP2321295 A JP 2321295A JP 2820197 B2 JP2820197 B2 JP 2820197B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- emitting device
- narrow
- semiconductor light
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 21
- 239000008393 encapsulating agent Substances 0.000 claims 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000002040 relaxant effect Effects 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂封止形半導体発光
装置、特に外部リードに引張力等の外力が加っても光透
過性の樹脂封止体及びリード細線に大きな応力が発生し
ない半導体発光装置の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor light-emitting device, and in particular, does not generate a large stress on a light-transmissive resin-encapsulated body and fine leads even when an external force such as a tensile force is applied to external leads. The present invention relates to a structure of a semiconductor light emitting device.
【０００２】[0002]
【従来の技術】図４に示す従来の樹脂封止形発光ダイオ
ードは、一方のリード（２）と、一方のリード（２）上
に固着された発光ダイオードチップ（１）と、発光ダイ
オードチップ（１）に電気的に接続された他方のリード
（３）と、発光ダイオードチップ（１）を封止する光透
過性の樹脂封止体（４）を有する。リード（２）（３）
は一方がカソード、他方がアノードである。発光ダイオ
ードチップ（１）の下面に形成された電極（図示せず）
は、リード（２）の上端に固着され且つ電気的に接続さ
れる。また、発光ダイオードチップ（１）の上面に形成
された電極（図示せず）はリード細線（５）でリード
（３）の上端に接続される。樹脂封止体（４）は底面側
にある円板形状の台座部（４ａ）と、台座部（４ａ）か
ら上方に伸びるレンズ部（４ｂ）から構成される。2. Description of the Related Art A conventional resin-sealed light emitting diode shown in FIG. 1 has one lead (2), a light emitting diode chip (1) fixed on one lead (2), and a light emitting diode chip ( It has the other lead (3) electrically connected to 1) and a light-transmitting resin sealing body (4) for sealing the light emitting diode chip (1). Lead (2) (3)
Is a cathode and the other is an anode. Electrodes (not shown) formed on the lower surface of the light emitting diode chip (1)
Are fixed to and electrically connected to the upper end of the lead (2). Further, an electrode (not shown) formed on the upper surface of the light emitting diode chip (1) is connected to the upper end of the lead (3) by a thin lead wire (5). The resin sealing body (4) includes a disk-shaped pedestal (4a) on the bottom side and a lens (4b) extending upward from the pedestal (4a).
【０００３】図４の発光ダイオードを回路基板に実装す
るとき、カットアンドクリンチ法によりリード（２）
（３）を回路基板（８）に固着している。例えば、図５
及び図６に示すように、回路基板（８）の孔（９）に挿
入したリード（２）（３）を２つの刃（１０）（１１）
によって折り曲げながらリード（２）（３）を延伸方向
に引張る。これによって、幅広部（６）（７）を回路基
板（８）に密着させると共にリード（２）（３）の先端
側を切除することができる。このとき、リード（２）
（３）に形成された幅広部（６）（７）は、回路基板
（８）への実装時に回路基板（８）に当接してストッパ
として働く。このため、実装時にリード（２）（３）に
強い引張力が加っても光透過性樹脂（４）又はリード細
線（５）に大きな応力が発生しないことが期待された。
リード（２）（３）に幅広部（６）（７）を設けない
と、樹脂封止体（４）の底面が回路基板（８）の上面に
直接密着して、リード（２）（３）が引張られ、樹脂封
止体（４）にクラックが生じ易かった。図４のダイオー
ドでは、幅広部（６）（７）が当接部として働き、リー
ド（２）（３）の引張力が樹脂封止体（４）に伝達され
ないと考えられた。When the light emitting diode of FIG. 4 is mounted on a circuit board, leads (2) are cut and clinched.
(3) is fixed to the circuit board (8). For example, FIG.
As shown in FIG. 6, the leads (2) and (3) inserted into the holes (9) of the circuit board (8) are inserted into two blades (10) and (11).
The leads (2) and (3) are pulled in the stretching direction while being bent. Thus, the wide portions (6) and (7) can be brought into close contact with the circuit board (8) and the leading ends of the leads (2) and (3) can be cut off. At this time, lead (2)
The wide portions (6) and (7) formed in (3) come into contact with the circuit board (8) and function as stoppers when mounted on the circuit board (8). Therefore, it was expected that even if a strong tensile force was applied to the leads (2) and (3) at the time of mounting, no large stress would be generated in the light-transmitting resin (4) or the fine lead wires (5).
If the wide portions (6) and (7) are not provided on the leads (2) and (3), the bottom surface of the resin sealing body (4) directly adheres to the upper surface of the circuit board (8) and the leads (2) and (3) ) Was pulled, and cracks were easily generated in the resin sealing body (4). In the diode of FIG. 4, it is considered that the wide portions (6) and (7) function as contact portions, and the tensile force of the leads (2) and (3) is not transmitted to the resin sealing body (4).
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、幅広部
（６）（７）を設けても、樹脂封止体及びリード細線に
大きな応力が発生し、実際には当初予想された程に樹脂
封止体及びリード細線を保護する十分な効果は得られな
かった。この理由は、明らかではないが、リード（２）
（３）の軸周りの回転方向にも応力が加わるためと考え
られる。However, even if the wide portions (6) and (7) are provided, a large stress is generated in the resin sealing body and the fine lead wires. A sufficient effect of protecting the body and the fine lead wires was not obtained. The reason for this is not clear, but lead (2)
It is considered that the stress is applied also in the rotation direction around the axis of (3).
【０００５】そこで、本発明はリードに発生するクリン
チストレスに耐えられる樹脂封止形半導体発光装置を提
供することを目的とする。Accordingly, an object of the present invention is to provide a resin-sealed semiconductor light emitting device that can withstand clinch stress generated in a lead.
【０００６】[0006]
【課題を解決するための手段】本発明による樹脂封止形
半導体発光装置は、第１及び第２のリードと、第１のリ
ードの上部に形成された素子搭載部に固着された一方の
電極及びリード細線を介して第２のリードのリード接続
部に電気的に接続された他方の電極を有する半導体発光
素子と、半導体発光素子及び第１及び第２のリードの一
部を封止する光透過性樹脂封止体とを備えている。第１
のリードは第１の幅狭部と、第１の幅狭部の上部に設け
られた幅広部と、幅広部の上部に設けられた第２の幅狭
部とを備え、第１のリードの第２の幅狭部の上部に素子
搭載部が形成される。第２のリードは第１の幅狭部と、
第１の幅狭部の上部に設けられた幅広部と、幅広部の上
部に設けられた第２の幅狭部とを備え、第２のリードの
第２の幅狭部の上部にリード接続部が形成される。第１
のリードの素子搭載部は第１のリードの両側面で厚さ方
向に突出する載置フランジ部と、載置フランジ部の上面
に形成された凹面部を備え、半導体発光素子は凹面に固
着される。第２のリードの頂部は第２のリードの両側面
で厚さ方向に突出する対応フランジ部を備えている。第
１のリードの第２の幅狭部は第２のリード側に偏位する
折曲げ部を備えている。第２のリードの第２の幅狭部は
第１のリード側に偏位する折曲げ部を備えている。第１
のリード及び第２のリードの各幅広部の下部は光透過性
樹脂封止体から露出する。A resin-encapsulated semiconductor light emitting device according to the present invention comprises first and second leads and one electrode fixed to an element mounting portion formed above the first leads. And a semiconductor light emitting element having the other electrode electrically connected to the lead connection portion of the second lead via the lead thin wire, and light for sealing a part of the semiconductor light emitting element and the first and second leads. A transparent resin sealing body. First
The first lead has a first narrow portion, a wide portion provided above the first narrow portion, and a second narrow portion provided above the wide portion. An element mounting portion is formed above the second narrow portion. The second lead has a first narrow portion,
A wide portion provided above the first narrow portion; and a second narrow portion provided above the wide portion, and a lead connection is provided above the second narrow portion of the second lead. A part is formed. First
The device mounting portion of the lead has a mounting flange portion protruding in the thickness direction on both side surfaces of the first lead, and a concave portion formed on the upper surface of the mounting flange portion, and the semiconductor light emitting device is fixed to the concave surface. You. The top of the second lead has corresponding flanges protruding in the thickness direction on both side surfaces of the second lead. The second narrow portion of the first lead has a bent portion that is deviated toward the second lead. The second narrow portion of the second lead has a bent portion deviating toward the first lead. First
The lower part of each wide part of the lead and the second lead is exposed from the light transmitting resin sealing body.
【０００７】本発明の実施例では、第１のリード及び第
２のリードの各第２の幅狭部は対応する第１の幅狭部の
延長上に位置する直線部を有する。また、第１のリード
及び第２のリードの各幅広部は対応する折曲げ部に直接
連絡する。In an embodiment of the present invention, each of the second narrow portions of the first lead and the second lead has a linear portion located on an extension of the corresponding first narrow portion. In addition, each wide portion of the first lead and the second lead directly communicates with the corresponding bent portion.
【０００８】[0008]
【作用】第１のリードに形成した載置フランジ部及び第
２のリードに形成した対応フランジ部は、樹脂封止体に
強固に密着するので、第１及び第２のリードの軸周りの
回転を防止すると共に、クリンチストレスが付与された
とき、第１のリード及び第２のリードに発生する応力が
分散してクッションの作用を生ずる。このため、実装時
に第１のリード及び第２のリードに強い引張力が加わっ
ても、樹脂封止体又はリード細線に大きな応力が発生せ
ず、樹脂封止体にクラックが生じたり、リード細線が切
断されない。また、カップ形状に形成された載置フラン
ジ部及び対応フランジ部の上面は、半導体発光素子から
の光を反射し、輝度アップに寄与する。更に、カップ状
の載置フランジ部と対応フランジ部を組合せると、反射
板となるため、広い発光エリアを形成することができ
る。第１及び第２のリードに設けた折曲げ部は、第１の
リード及び第２のリードに発生する機械的応力を緩和す
る作用がある。The mounting flange portion formed on the first lead and the corresponding flange portion formed on the second lead firmly adhere to the resin sealing body, so that the first and second leads rotate around the axis. And when the clinch stress is applied, the stress generated in the first lead and the second lead is dispersed to produce a cushion effect. For this reason, even if a strong tensile force is applied to the first lead and the second lead during mounting, a large stress is not generated in the resin-sealed body or the fine lead, and cracks occur in the resin-sealed body or the fine lead-wire is not formed. Is not disconnected. Further, the upper surfaces of the mounting flange portion and the corresponding flange portion formed in a cup shape reflect light from the semiconductor light emitting element and contribute to an increase in luminance. Further, when the cup-shaped mounting flange portion and the corresponding flange portion are combined, a reflection plate is provided, so that a wide light emitting area can be formed. The bent portions provided on the first and second leads have an action of relaxing mechanical stress generated in the first and second leads.
【０００９】[0009]
【実施例】以下、樹脂封止形発光ダイオードに適用した
本発明の実施例を図１〜図３について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention applied to a resin-sealed light emitting diode will be described below with reference to FIGS.
【００１０】図１〜図２に示す本発明の第１の実施例に
よる樹脂封止形半導体発光装置（２０）は、第１のリー
ド（２１）及び第２のリード（２２）とを有する。第１
のリード（２１）は第１の幅狭部（２１ａ）と、第１の
幅狭部（２１ａ）の上部に設けられた幅広部（２１ｂ）
と、幅広部（２１ｂ）の上部に設けられた第２の幅狭部
（２１ｃ）と、第２の幅狭部（２１ｃ）の上部に設けら
れた素子搭載部（２３）とを有する。第１のリード（２
１）の第２の幅狭部（２１ｃ）の中心軸は第１の幅狭部
（２１ａ）の中心軸を延長した位置よりも第２のリード
（２２）側に偏位する折曲げ部（２１ｄ）を有する。第
２のリード（２２）は第１の幅狭部（２２ａ）と、第１
の幅狭部（２２ａ）の上部に設けられた幅広部（２２
ｂ）と、幅広部（２２ｂ）の上部に設けられた第２の幅
狭部（２２ｃ）と、第２の幅狭部（２２ｃ）の上部に設
けられたリード接続部（２５）とを有する。第２のリー
ド（２２）の第２の幅狭部（２２ｃ）の中心軸は第１の
幅狭部（２２ａ）の中心軸を延長した位置よりも第１の
リード（２１）側に偏位する折曲げ部（２２ｄ）を有す
る。A resin-sealed semiconductor light emitting device (20) according to a first embodiment of the present invention shown in FIGS. 1 and 2 has a first lead (21) and a second lead (22). First
The lead (21) has a first narrow portion (21a) and a wide portion (21b) provided above the first narrow portion (21a).
And a second narrow portion (21c) provided above the wide portion (21b) and an element mounting portion (23) provided above the second narrow portion (21c). The first lead (2
The bent portion (1) in which the central axis of the second narrow portion (21c) deviates toward the second lead (22) from a position where the central axis of the first narrow portion (21a) is extended. 21d). The second lead (22) has a first narrow portion (22a) and a first lead (22a).
The wide portion (22) provided above the narrow portion (22a)
b), a second narrow portion (22c) provided above the wide portion (22b), and a lead connection portion (25) provided above the second narrow portion (22c). . The central axis of the second narrow portion (22c) of the second lead (22) is deviated toward the first lead (21) from a position where the central axis of the first narrow portion (22a) is extended. Bent portion (22d).
【００１１】第１のリード（２１）の素子搭載部（２
３）は第１のリード（２１）の両側面で厚さ方向に突出
する載置フランジ部（２７）と、載置フランジ部（２
７）の上面に形成された凹面部（２８）を備え、発光ダ
イオード素子である半導体発光素子（２４）は厚さ方向
の略中央部において凹面部（２８）に固着される。この
ため、第１のリード（２１）の素子搭載部（２３）には
半導体発光素子（２４）の下面側に設けられた一方の電
極（図示せず）が固着される。第２のリード（２２）の
頂部は第２のリード（２２）の両側面で厚さ方向に突出
する対応フランジ部（３０）を備えている。対応フラン
ジ部（３０）には凹面部（３２）が形成される。半導体
発光素子（２４）の上面側に設けられた他方の電極（図
示せず）はリード細線（３１）を介して第２のリード
（２２）のリード接続部（２５）に電気的に接続され
る。光透過性の樹脂封止体（２６）は、半導体発光素子
（２４）、素子搭載部（２３）、リード接続部（２５）
及び第１のリード（２１）及び第２のリード（２２）の
一部を封止する。各幅広部（２１ｂ）（２２ｂ）の下部
は樹脂封止体（２６）の底面から露出する。樹脂封止体
（２６）は、透明又は半透明の樹脂により形成される。
第１のリード（２１）及び第２のリード（２２）の各第
２の幅狭部（２１ｃ）（２２ｃ）は対応する第１の幅狭
部（２１ａ）（２２ａ）の延長上に位置する直線部（２
１ｅ）（２２ｅ）を有する。The element mounting portion (2) of the first lead (21)
3) a mounting flange portion (27) projecting in the thickness direction on both side surfaces of the first lead (21); and a mounting flange portion (2).
The semiconductor light emitting device (24), which is a light emitting diode device, is fixed to the concave portion (28) at a substantially central portion in the thickness direction. Therefore, one electrode (not shown) provided on the lower surface side of the semiconductor light emitting element (24) is fixed to the element mounting portion (23) of the first lead (21). The top of the second lead (22) has corresponding flanges (30) projecting in the thickness direction on both side surfaces of the second lead (22). A concave surface portion (32) is formed in the corresponding flange portion (30). The other electrode (not shown) provided on the upper surface side of the semiconductor light emitting element (24) is electrically connected to the lead connection part (25) of the second lead (22) via the lead wire (31). You. The light-transmitting resin sealing body (26) includes a semiconductor light emitting element (24), an element mounting part (23), and a lead connection part (25).
And sealing a part of the first lead (21) and the second lead (22). The lower portions of the wide portions (21b) and (22b) are exposed from the bottom surface of the resin sealing body (26). The resin sealing body (26) is formed of a transparent or translucent resin.
Each of the second narrow portions (21c) and (22c) of the first lead (21) and the second lead (22) is located on the extension of the corresponding first narrow portion (21a) (22a). Straight section (2
1e) and (22e).
【００１２】本発明の実施例では、第１のリード（２
１）に形成した載置フランジ部（２７）及び第２のリー
ド（２２）に形成した対応フランジ部（３０）は、樹脂
封止体（２６）に強固に密着するので、第１のリード
（２１）及び第２のリード（２２）の軸回りの回転を防
止できると共に、クリンチストレスが付与されたとき、
第１のリード（２１）及び第２のリード（２２）に発生
する応力が分散されてクッションの作用を生ずる。この
ため、実装時に第１のリード（２１）及び第２のリード
（２２）に強い引張力が加わっても、樹脂封止体（２
６）又はリード細線（３１）に大きな応力が発生せず、
樹脂封止体（２６）にクラックが生じたり、リード細線
（３１）が切断されない。また、カップ形状に形成され
た載置フランジ部（２７）及び対応フランジ部（３０）
の凹面部（２８）（３２）は半導体発光素子（２４）か
らの光を反射し、輝度アップに寄与する。更に、第１の
リード（２１）及び第２のリード（２２）のカップを組
合せた形状が楕円になるので、広い発光エリアを形成す
ることができる。第１のリード（２１）及び第２のリー
ド（２２）に設けた折曲げ部（２１ｄ）（２２ｄ）は、
第１のリード（２１）及び第２のリード（２２）に発生
する機械的応力を緩和する作用がある。載置フランジ部
（２７）及び対応フランジ部（３０）は例えば金型によ
り押し潰して形成される。In the embodiment of the present invention, the first lead (2
Since the mounting flange portion (27) formed in 1) and the corresponding flange portion (30) formed on the second lead (22) are firmly adhered to the resin sealing body (26), the first lead ( 21) and the second lead (22) can be prevented from rotating around the axis, and when clinch stress is applied,
The stress generated in the first lead (21) and the second lead (22) is dispersed to produce a cushion effect. For this reason, even if a strong tensile force is applied to the first lead (21) and the second lead (22) during mounting, the resin sealing body (2)
6) or large stress is not generated in the fine lead wire (31),
Cracks do not occur in the resin sealing body (26), and the thin lead wires (31) are not cut. A mounting flange portion (27) and a corresponding flange portion (30) formed in a cup shape.
Concave portions (28) and (32) reflect light from the semiconductor light emitting element (24) and contribute to an increase in luminance. Furthermore, since the shape of the combination of the cups of the first lead (21) and the second lead (22) is elliptical, a wide light emitting area can be formed. The bent portions (21d) and (22d) provided on the first lead (21) and the second lead (22)
It has an effect of relaxing mechanical stress generated in the first lead (21) and the second lead (22). The mounting flange portion (27) and the corresponding flange portion (30) are formed by crushing with a mold, for example.
【００１３】本発明の第２の実施例を示す図３では、図
１に示す直線部（２１ｅ）（２２ｅ）が第２の幅狭部
（２１ｃ）（２２ｃ）から除去され、第１のリード（２
１）及び第２のリード（２２）の各幅広部（２１ｂ）
（２２ｂ）は対応する折曲げ部（２１ｄ）（２２ｄ）に
直接連絡する。In FIG. 3 showing a second embodiment of the present invention, the straight portions (21e) and (22e) shown in FIG. 1 are removed from the second narrow portions (21c) and (22c), and the first lead is formed. (2
1) and each wide portion (21b) of the second lead (22)
(22b) communicates directly with the corresponding bend (21d) (22d).
【００１４】[0014]
【発明の効果】本発明による樹脂封止形半導体発光装置
は機械的強度が大きいため、使用時の信頼性が向上する
と共に光量が増加する利点がある。As described above, the resin-sealed semiconductor light emitting device according to the present invention has high mechanical strength, and thus has the advantages of improving reliability during use and increasing the amount of light.
【図１】 本発明を適用した樹脂封止形発光ダイオード
の断面図FIG. 1 is a cross-sectional view of a resin-sealed light emitting diode to which the present invention is applied.
【図２】 図１の平面図FIG. 2 is a plan view of FIG. 1;
【図３】 本発明の他の実施例を示す断面図FIG. 3 is a sectional view showing another embodiment of the present invention.
【図４】 従来の樹脂封止形発光ダイオードの断面図FIG. 4 is a cross-sectional view of a conventional resin-sealed light emitting diode.
【図５】 リードを切除する前の状態を示す側面図FIG. 5 is a side view showing a state before the lead is cut off;
【図６】 リードを切除する状態を示す側面図FIG. 6 is a side view showing a state in which a lead is cut off.
（２０）・・樹脂封止形半導体発光装置、 （２１）・
・第１のリード、 （２１ａ）・・第１の幅狭部、
（２１ｂ）・・幅広部、 （２１ｃ）・・第２の幅狭
部、 （２１ｄ）・・折曲げ部、 （２２）・・第２の
リード、 （２２ａ）・・第１の幅狭部、 （２２ｂ）
・・幅広部、 （２２ｃ）・・第２の幅狭部、 （２
３）・・素子搭載部、 （２４）・・半導体発光素子、
（２５）・・リード接続部、 （２６）・・樹脂封止
体、 （２７）・・載置フランジ部、（２８）・・凹面
部、 （３０）・・対応フランジ部、 （３１）・・リ
ード細線、(20) ·· Resin-sealed semiconductor light emitting device (21) ·
A first lead, (21a) a first narrow portion,
(21b) ··· wide part, (21c) ··· second narrow part, (21d) ··· bent part, (22) ··· second lead, (22a) ··· first narrow part , (22b)
..The wide portion, (22c) the second narrow portion, (2c)
3) Element mounting part (24) Semiconductor light emitting element
(25) ··· Lead connection part, (26) ··· Resin sealing body, (27) · · · Mounting flange part, (28) · · · Concave surface part, (30) · · · Corresponding flange part, (31) ·・ Lead wire,
Claims (3)
ードの上部に形成された素子搭載部に固着された一方の
電極及びリード細線を介して前記第２のリードのリード
接続部に電気的に接続された他方の電極を有する半導体
発光素子と、該半導体発光素子及び前記第１及び第２の
リードの一部を封止する光透過性樹脂封止体とを備えた
樹脂封止形半導体発光装置において、 前記第１のリードは第１の幅狭部と、該第１の幅狭部の
上部に設けられた幅広部と、該幅広部の上部に設けられ
た第２の幅狭部とを備え、前記第１のリードの第２の幅
狭部の上部に前記素子搭載部が形成され、 前記第２のリードは第１の幅狭部と、該第１の幅狭部の
上部に設けられた幅広部と、該幅広部の上部に設けられ
た第２の幅狭部とを備え、前記第２のリードの第２の幅
狭部の上部に前記リード接続部が形成され、 前記第１のリードの前記素子搭載部は前記第１のリード
の両側面で厚さ方向に突出する載置フランジ部と、該載
置フランジ部の上面に形成された凹面部を備え、前記半
導体発光素子は前記凹面に固着され、 前記第２のリードの頂部は第２のリードの両側面で厚さ
方向に突出する対応フランジ部を備え、 前記第１のリードの前記第２の幅狭部は前記第２のリー
ド側に偏位する折曲げ部を備え、前記第２のリードの前
記第２の幅狭部は前記第１のリード側に偏位する折曲げ
部を備え、 前記第１のリード及び第２のリードの各幅広部の下部は
前記光透過性樹脂封止体から露出することを特徴とする
樹脂封止形半導体発光装置。1. A lead connection part of the second lead via first and second leads, one electrode fixed to an element mounting part formed on the first lead, and a lead thin wire. Resin light-emitting device having a semiconductor light-emitting device having the other electrode electrically connected to the semiconductor light-emitting device, and a light-transmitting resin sealing body for sealing the semiconductor light-emitting device and a part of the first and second leads. In the stop-type semiconductor light emitting device, the first lead has a first narrow portion, a wide portion provided above the first narrow portion, and a second portion provided above the wide portion. A narrow portion, wherein the element mounting portion is formed above a second narrow portion of the first lead, wherein the second lead has a first narrow portion and the first narrow portion. A wide portion provided at an upper portion of the portion, and a second narrow portion provided at an upper portion of the wide portion. The lead connection portion is formed above the narrow portion of the first lead, the element mounting portion of the first lead has a mounting flange portion protruding in a thickness direction on both side surfaces of the first lead, and A concave portion formed on an upper surface of the flange portion, wherein the semiconductor light-emitting element is fixed to the concave surface; The second narrow portion of the first lead includes a bent portion that is deviated toward the second lead, and the second narrow portion of the second lead includes the first narrow portion. A resin-encapsulated semiconductor, comprising a bent portion deviating toward the lead, wherein lower portions of the wide portions of the first lead and the second lead are exposed from the light-transmitting resin encapsulant. Light emitting device.
第２の幅狭部は対応する前記第１の幅狭部の延長上に位
置する直線部を有する請求項１に記載の樹脂封止形半導
体発光装置。2. The resin according to claim 1, wherein each of the second narrow portions of the first lead and the second lead has a linear portion located on an extension of the corresponding first narrow portion. A sealed semiconductor light emitting device.
幅広部は対応する折曲げ部に直接連絡する請求項１に記
載の樹脂封止形半導体発光装置。3. The resin-sealed semiconductor light emitting device according to claim 1, wherein each wide portion of said first lead and said second lead directly communicates with a corresponding bent portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7023212A JP2820197B2 (en) | 1995-02-10 | 1995-02-10 | Resin-sealed semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7023212A JP2820197B2 (en) | 1995-02-10 | 1995-02-10 | Resin-sealed semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08222766A JPH08222766A (en) | 1996-08-30 |
| JP2820197B2 true JP2820197B2 (en) | 1998-11-05 |
Family
ID=12104365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7023212A Expired - Fee Related JP2820197B2 (en) | 1995-02-10 | 1995-02-10 | Resin-sealed semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2820197B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160013378A1 (en) * | 2014-07-11 | 2016-01-14 | Nichia Corporation | Semiconductor light emitting device and method for producing the same |
-
1995
- 1995-02-10 JP JP7023212A patent/JP2820197B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160013378A1 (en) * | 2014-07-11 | 2016-01-14 | Nichia Corporation | Semiconductor light emitting device and method for producing the same |
| US9947848B2 (en) * | 2014-07-11 | 2018-04-17 | Nichia Corporation | Semiconductor light emitting device and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08222766A (en) | 1996-08-30 |
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