JP2801434B2 - Connection between semiconductor device chip and heat dissipation member and method of manufacturing the same - Google Patents

Abstract

PURPOSE:To provide a joint of a semiconductor device chip and a heat dissipating member, where a soldering material is hardly attached to the device chip to cause a short circuit. CONSTITUTION:In a joint of a semiconductor laser chip 2 and a heat sink 6 to fix them together interposing a bonding pad 1 between them, the bonding pad 1 is provided with a gap located between the non-electrode part 3 and the semiconductor laser chip 2 and formed at least partially covering the non- electrode part 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection between a semiconductor device chip and a heat radiating member when fixing a semiconductor device chip such as a light emitting diode chip or a semiconductor laser chip and a heat radiating member such as a heat sink or a submount. It is about the department.

[0002]

2. Description of the Related Art A semiconductor device chip such as a light emitting diode chip or a semiconductor laser chip is fixed to a heat sink or a submount as a heat radiating member for releasing heat during driving. In this fixing method, die bonding using a solder material is used, and in the case of die bonding, it is desired that both are bonded with low thermal resistance. In particular, when die-bonding with the light emitting part of the semiconductor device chip as the heat sink or submount side, it is important to reduce the thermal resistance and to reduce the distortion of the connection between the semiconductor device chip and the heat sink or submount. It is.

Conventionally, as shown in FIG. 3, a semiconductor device chip 12 (in this example, a semiconductor laser chip is used; the same applies hereinafter) and a heat radiation member 13 (a heat sink is used in this example; the same applies hereinafter). The connection part is formed by growing gold plating on the electrode part 14 of the semiconductor laser chip 12 with a predetermined thickness to form a bonding pad 11 and fixing the bonding pad 11 and the heat sink 13 by die bonding using a solder material 15. Was.

[0004] In addition, a method of manufacturing this connection portion is first described with reference to FIG.
As shown in (a) and (b), a plurality of semiconductor laser chips 12 (six semiconductor laser chips 12 are shown in the figure) formed on a semiconductor wafer 18 are plated on non-electrode portions 19. After forming the resist 20, gold plating is grown on the electrode portion 14 of the semiconductor laser chip 12 to be thinner than the thickness of the plating resist 20 to form a bonding pad 11, and thereafter, the plating resist 20 is removed. As shown in (c), the non-electrode portion 19 from which the plating resist 20 has been removed is processed by means such as dicing or wall opening to separate the individual semiconductor laser chips 12 from each other.

[0005]

However, the connection between the semiconductor laser chip 12 and the heat sink 13 has the following problems.

That is, the electrode portion 1 of the semiconductor laser chip 12
When the semiconductor laser chip 12 and the heat sink 13 are fixed with the solder material 15 via the bonding pad 11 formed vertically on the solder pad 4, the solder material 15 spreads along the vertical direction of the side surface 16 of the bonding pad 11. If there is a defect 17 such as a crack generated at the time of dicing or opening the wall at the end of the semiconductor laser chip 12, or the like, the solder material 15 is exposed on the side surface of the semiconductor laser chip 12. This causes the semiconductor laser chip 12 to be short-circuited (short-circuited), making the semiconductor laser chip 12 unusable.

[0007]

SUMMARY OF THE INVENTION An object of the present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a semiconductor device chip and a heat radiation member which do not short-circuit a semiconductor device chip due to the adhesion of a solder material. And a manufacturing method thereof.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor device having a semiconductor device chip and a heat radiating member fixed by interposing a bonding pad between the semiconductor device chip and the heat radiating member. In the connection portion between the device chip and the heat radiation member, the bonding pad has a gap between the non-electrode portion of the semiconductor device chip and is formed so as to cover at least a part of the non-electrode portion. Features. Further, the method of manufacturing the connection portion includes forming a plating resist on non-electrode portions of a plurality of semiconductor device chips formed on a semiconductor wafer, and then applying metal plating on an electrode portion of the semiconductor device chip. Thicker and isotropically grown, after which the plating resist is removed and the non-electrode part from which the plating resist is removed is diced or cleaved to separate it into individual semiconductor device chips It is characterized by.

[0009]

An embodiment of the present invention will be described with reference to FIG.

The connection between the semiconductor device chip 2 of the present invention (a semiconductor laser chip is used in this embodiment; the same applies hereinafter) and a heat radiation member 6 (a heat sink is used in this embodiment; the same applies hereinafter) is characterized by the following features. Bonding pad 1 interposed between semiconductor laser chip 2 and heat sink 6
Gap 4 between the non-electrode portion 3 of the semiconductor laser chip 2
And is formed so as to cover at least a part of the non-electrode portion 3.

FIG. 1 is a front view when a semiconductor laser chip 2 and a heat sink 6 are fixed via a bonding pad 1 according to an embodiment of the present invention. The bonding pad 1 is formed by growing gold plating to a predetermined thickness on the electrode portion 5 of the semiconductor laser chip 2 formed, for example, in a square of 300 micrometers, and is connected to the non-electrode portion 3 of the semiconductor laser chip 2. It is formed so as to have a gap 4 therebetween and to cover a part of the non-electrode portion 3 (in FIG. 1, it is formed in a longitudinal direction perpendicular to the paper surface).

The space between the gaps 4 is, for example, about 1 to 2 μm. By providing the gaps 4, the solder material 7 described later expands along the vertical direction (X direction) of the side surface 9 of the bonding pad 1. You will not get stuck. Also, interval 1
The thickness of the bonding pad 1 is preferably set to 10 to 25 micrometers for the gap 4 of 2 to 2 micrometers, and if it is 10 micrometers or less, the solder material 7 goes into the gap 4 depending on the die bonding conditions. If the thickness is 25 micrometers or more, the variation in plating thickness becomes large, the plating time is lost, and it is not economically preferable.

The bonding pad 1 and the heat sink 6 are fixed with a solder material 7 made of, for example, 80% by weight of gold and 20% by weight of tin.
Heating is performed by melting at 0 ° C., and when the solder material 7 is melted, the semiconductor laser chip 2 is moved (scrubbed) on the heat sink 6 to extend the solder material 7.

The heat sink 6 has a surface of, for example, silicon, diamond, aluminum nitride, or the like coated with gold having a thickness of 1 to 2 μm, which has good compatibility with the solder material 7. In this embodiment, the heat sink 6 is used as the heat radiating member, but a submount may be used instead of the heat sink 6.

Hereinafter, a method for manufacturing the connection portion will be described with reference to FIG.

First, as shown in FIG. 2A, non-electrode portions of a plurality of semiconductor laser chips 2 formed on a semiconductor wafer 10 (three semiconductor laser chips 2 are shown in this figure). Next, a plating resist 10- (1) having a thickness of 1 to 2 micrometers is formed on the substrate. In addition, plating resist 10- (1)
Uses OMR (trade name).

Next, as shown in FIG. 2B, gold plating is isotropically grown in the x direction on the electrode portion 5 of the semiconductor laser chip 2 by, for example, electroless plating to obtain a thickness ( A bond pad 1 having a thickness of 10 to 25 micrometers (x-direction thickness) is formed. At this time, since the gold plating is grown isotropically, the gold plating that has grown to a thickness (1-2 micrometers) or more of the plating resist 10- (1) also wraps around the plating resist 10- (1), At the same time, it grows in the y direction.

Further, as shown in FIG. 2C, the gap 4 is formed by removing the plating resist 10- (1) with a solvent, and the non-electrode portion from which the plating resist 10- (1) has been removed is removed. Dicing or cleaving to separate into individual semiconductor laser chips 2.

According to the connection portion of this embodiment, the bonding pad 1 is formed so as to have the gap 4 between the non-electrode portion 3 of the semiconductor laser chip 2 and to cover at least a part of the non-electrode portion 3. Therefore, even if the solder material 7 does not spread along the vertical direction of the side surface 9 of the bonding pad 1 and the semiconductor laser chip 2 has a crack 8 The semiconductor laser chip 2 does not adhere to the semiconductor laser chip 2, and as a result, the semiconductor laser chip 2 is not short-circuited (short-circuited) by the solder material 7. Further, according to the manufacturing method of the present embodiment, it is possible to provide a connection portion having the above-described effects by a simple method.

[0020]

According to the connecting portion between the semiconductor device chip and the heat radiating member of the present invention, the bonding pad interposed between the semiconductor device chip and the heat radiating member forms a gap between the semiconductor device chip and the non-electrode portion of the semiconductor device chip. Since it is formed so as to cover at least a part of the non-electrode part,
Even if the semiconductor device chip is cracked or broken, the solder material does not adhere to the semiconductor device chip, and the semiconductor device chip does not short-circuit. Further, according to the manufacturing method of the present invention, the connection portion can be provided by a simple method.

[Brief description of the drawings]

FIG. 1 is a front view showing an embodiment of the present invention.

FIGS. 2 (a) to 2 (c) show a manufacturing process when manufacturing a connecting portion of the present invention.

FIG. 3 is a front view showing a conventional connecting portion.

FIGS. 4 (a) to 4 (c) are manufacturing process diagrams when a conventional connection portion is manufactured.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Bonding pad 2 Semiconductor laser chip 3 Non-electrode part 4 Gap 5 Electrode part 6 Heat sink 7 Solder material 8 Defect part 9 Side surface 10 Semiconductor wafer 10- (1) Plating resist

Claims (2)

(57) [Claims] 1. A connecting portion between a semiconductor device chip and a heat radiating member for fixing the semiconductor device chip and the heat radiating member by interposing a bonding pad between the semiconductor device chip and the heat radiating member. A connection portion between a semiconductor device chip and a heat radiating member, which has a gap between the device chip and a non-electrode portion and is formed so as to cover at least a part of the non-electrode portion. 2. After forming a plating resist on the non-electrode portions of a plurality of semiconductor device chips formed on a semiconductor wafer, metal plating is performed on the electrode portions of the semiconductor device chip so as to be thicker than the plating resist. The non-electrode portion from which the plating resist is removed, and the non-electrode portion from which the plating resist has been removed is diced or cleaved to be separated into individual semiconductor device chips. 2. A method for manufacturing a connection portion between a semiconductor device chip and a heat dissipation member according to 1.