JP2798188B2 - Semiconductor device test equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device test apparatus for testing a semiconductor device having a bump electrode before flip-chip mounting the semiconductor device on a mounting substrate.

[0002]

2. Description of the Related Art In general, a semiconductor element is subjected to a voltage application test at a high temperature in order to find an initial failure. In this semiconductor device, a semiconductor element is packaged in a storage container. However, in the direct mounting of a semiconductor element typified by a flip chip method which has been performed for high-density mounting in recent years, the above-described voltage application test at a high temperature is not performed, or the semiconductor element is bonded with a bonding material such as solder. The test was performed by connecting the electrodes and a test device. Therefore, when removing the semiconductor device from the test equipment after the test, it must be reheated,
Elution of the metal that forms the protruding electrode into the solder, or the phenomenon of the solder remaining on the protruding electrode occurs, reducing the reliability after mounting. In order to solve this problem, a method of crimping a semiconductor element onto a circuit board instead of connecting with solder has been studied.

[0003]

However, in the above-mentioned conventional configuration, the circuit board used in the semiconductor device test apparatus is a resin material such as epoxy containing glass fiber or an insulating base such as alumina. It has a large coefficient of thermal expansion as compared to the coefficient of thermal expansion of the constituent silicon. Therefore, when a circuit board made of these insulating bases is used in a semiconductor device test apparatus and the semiconductor device is mounted by a crimping method, the relative displacement of the semiconductor device and the circuit board due to a temperature difference due to heating during mounting and testing. Therefore, there is a problem that electrical connection failure between the semiconductor element and the circuit board and deformation of the protruding electrode occur due to the above.

SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems. An object of the present invention is to provide a semiconductor device test apparatus capable of finding an initial defect of a semiconductor device without causing deformation or damage to a protruding electrode provided on the semiconductor device. The purpose is to provide.

[0005]

In order to achieve the above object, a semiconductor device test apparatus according to the present invention comprises a circuit board having an electrode terminal for electrically connecting a semiconductor element having a protruding electrode; Pressure bonding means for pressing the semiconductor element mounted on the circuit board from above, the circuit board is a low thermal expansion ceramic substrate such as a mullite sintered body or an aluminum nitride sintered body, and the electrode terminals Has a configuration in which a concave portion for accommodating a projecting electrode of a semiconductor element is provided.

[0006]

With this configuration, electrical connection failure due to the relative displacement between the test circuit board and the semiconductor element due to temperature change, and deformation or damage of the protruding electrode provided on the semiconductor element are caused. And the initial failure of the semiconductor element can be found without any problem.

[0007]

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional front view of a semiconductor device test apparatus according to an embodiment of the present invention. In FIG. 1, reference numeral 1 denotes an insulating base made of a ceramic sintered body having a low coefficient of thermal expansion;
Is a semiconductor element, 3 is a conductor layer made of a high melting point metal, 4 is a protruding electrode of the semiconductor element 2, 5 is a concave portion of a substrate electrode, 6 is a gold-plated electrode terminal, and 7 is a crimping means. On the main surface of the insulating base 1, a recess 5 having a depth smaller than the height of the projecting electrode 4 by 10 μm to 30 μm and having an inner diameter larger than that of the projecting electrode 4 is provided at a position corresponding to the projecting electrode 4 of the semiconductor element 2. In addition, a gold plating layer having a thickness of 2 μm or more is applied to the bottom surface of the concave portion 5 in order to obtain good electrical connection with the protruding electrode 4, thereby forming an electrode terminal 6. This electrode terminal 6
Are electrically drawn to the end of the insulating base 1 through the conductor layer 3.

The insulating substrate 1 is made of mullite (Al ₂ O ₃ .2S).
i0 ₂₎ powder was added sintering aid _{(Si0 2, Mg0, Ca0)} , a conductive paste made of a refractory metal powder by screen printing on the formed into a sheet by mixing further adding a polymer, pressurized It is formed by firing in a reducing atmosphere at about 1500 to 1700 ° C. after the pressure lamination. The concave portion 5 of the substrate electrode is formed by punching a hole in the uppermost layer sheet with a press die during sheet molding.

An example in which a 1 Mbit DRAM is subjected to a high-temperature voltage application test using the above-described semiconductor device test apparatus will be described. DRAM has a chip size of 4.3
8mm x 11.63mm, 0.4mm thick, 20 electrodes
belongs to. An Au wire (30 μm in diameter) is placed on this electrode.
The bump electrode 4 is formed by the ball bonding method using the method m). Such a semiconductor element 2 is placed on the insulating base 1. At this time, the semiconductor element 2 is crimped by using a clip as the crimping means 7 with the protruding electrode 4 aligned with the concave portion 5 of the insulating base 1. The protruding electrode 4 of the semiconductor element 2 is
Is connected to an external power supply via a tab provided on the outer side of. Thus, the semiconductor element 2 is left for 48 hours in an electric oven maintained at 125 ° C. while a voltage of 2.5 V is applied. After that, the clip is detached, the semiconductor element 2 is removed from the insulating base 1, the electrical characteristics are measured, and the defective semiconductor element 2 is removed. A good semiconductor element 2 is mounted on a mounting board by soldering or the like. An electrical test is performed on the mounting board on which the semiconductor element 2 is mounted, and a voltage application test is performed at a high temperature.

Table 1 shows the test results at the stage of the semiconductor device (shown as primary in Table 1) for the type of substrate used in the semiconductor device test apparatus and the bonding method of the semiconductor device. Of the semiconductor device after soldering, and the test results as a mounting board (in Table 1, denoted as secondary).

[0012]

[Table 1]

[0013]

[Table 2]

As an insulating substrate 1 shown in Table 1, a mullite sintered body, an aluminum nitride sintered body, an alumina sintered body as a comparison, and an epoxy substrate containing glass fiber were used. As a connection method, crimping by a clip and connection by soldering were used. As shown in (Table 1) and (Table 2), when the semiconductor element 2 was mounted on an alumina sintered body or an epoxy substrate containing glass fiber by a crimping method and a high-temperature voltage application test (primary) was performed, the test was performed. Although the rate of occurrence of defects in the semiconductor element 2 is low, a high-temperature voltage application test after or after mounting on the mounting board (secondary)
The defect rate of the semiconductor element 2 after the implementation is extremely high. This indicates that the voltage was not sufficiently applied to the semiconductor element 2 during the primary high-temperature voltage application test, that is, the connection between the protruding electrode 4 and the electrode terminal 6 was not sufficient.

[0015]

As described above, according to the present invention, a circuit board on which an electrode terminal for making electrical connection with a semiconductor element having a protruding electrode is formed, and a semiconductor element mounted on the circuit board is placed above the circuit board. A circuit board is a low thermal expansion ceramic substrate such as a mullite sintered body or an aluminum nitride sintered body, and the electrode terminal has a recess for accommodating a projecting electrode of a semiconductor element. With such a configuration, it is possible to realize an excellent semiconductor device test apparatus capable of finding an initial failure of the semiconductor device without causing deformation or damage to the protruding electrode provided on the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a sectional front view of a semiconductor device test apparatus according to an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating base (circuit board) 2 Semiconductor element 4 Projection electrode 5 Depression 6 Electrode terminal 7 Crimping means

Claims (2)

(57) [Claims] 1. A circuit board on which an electrode terminal for making an electrical connection with a semiconductor element having a protruding electrode is formed, and a semiconductor element mounted on the circuit board is pressed from above to form the semiconductor element. Protruding electrodes and electrodes of the circuit board
A crimping means using a clip for connecting a terminal , the circuit board is a low thermal expansion ceramic substrate made of a mullite sintered body, and the electrode terminal has a recess for accommodating a projecting electrode of the semiconductor element. Tester for semiconductor devices provided with. 2. The circuit board is made of an aluminum nitride sintered body.
A low thermal expansion ceramic substrate
The test device for a semiconductor device according to claim 1.