JP2777677B2 - Method for producing iridium oxide film / metal bonded body - Google Patents

Method for producing iridium oxide film / metal bonded body

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Publication number
JP2777677B2
JP2777677B2 JP2410724A JP41072490A JP2777677B2 JP 2777677 B2 JP2777677 B2 JP 2777677B2 JP 2410724 A JP2410724 A JP 2410724A JP 41072490 A JP41072490 A JP 41072490A JP 2777677 B2 JP2777677 B2 JP 2777677B2
Authority
JP
Japan
Prior art keywords
iridium
oxide film
iridium oxide
metal
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2410724A
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Japanese (ja)
Other versions
JPH0586499A (en
Inventor
義幸 佐藤
正則 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Nippon Steel Corp
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Priority to JP2410724A priority Critical patent/JP2777677B2/en
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、主に陽極電極触媒に用
いることを目的とした酸化イリジウム膜/金属接合体の
製造方法、さらに詳しくは所望の水溶液を電解して陽極
で酸素を発生させる反応に用いられ且つ低い酸素過電圧
を有する酸素発生用電極の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an iridium oxide film / metal assembly mainly intended for use as an anode electrode catalyst, and more particularly, to electrolyze a desired aqueous solution to generate oxygen at the anode. The present invention relates to a method for producing an electrode for oxygen generation used in a reaction and having a low oxygen overvoltage.

【0002】[0002]

【従来技術とその問題点】一般に、鉄鋼などの表面に亜
鉛、錫などを電気メッキする場合、電解液として硫酸水
溶液を用い、メッキを施す鉄鋼などの金属基材からなる
陰極と、チタン、鉛などの陽極電極との間を通電させる
ことによってメッキされる。この場合、エネルギー効率
良くメッキを行なうためには、陽極と陰極との間に印加
される電圧を低くするのがよい。
2. Description of the Related Art Generally, when zinc or tin is electroplated on the surface of steel or the like, a sulfuric acid aqueous solution is used as an electrolytic solution, and a cathode made of a metal base such as steel to be plated, titanium, lead, or the like. The plating is performed by applying a current to the anode electrode. In this case, in order to perform plating with high energy efficiency, it is preferable to lower the voltage applied between the anode and the cathode.

【0003】しかしながら、陰極において亜鉛、錫など
がめっきされるのと同時に陽極から酸素が発生すること
により酸素発生過電圧が生じるので、これを低く押さえ
る必要がある。
[0003] However, oxygen is generated from the anode at the same time as zinc or tin is plated on the cathode, which causes an oxygen generation overpotential.

【0004】従って、酸素発生過電圧を低くするために
上記金属基材からなる陰極の表面に白金、イリジウムな
どの貴金属をコーティングするという方法が従来より行
なわれている。特開昭63-235493 号に開示された方法と
して、酸化イリジウムと酸化タンタルの混合酸化物をチ
タンなどの金属基材表面に湿式プロセスによりコーティ
ングする方法がある。
[0004] Therefore, a method of coating the surface of the cathode made of the above-mentioned metal base material with a noble metal such as platinum or iridium has been conventionally used in order to reduce the oxygen generation overvoltage. As a method disclosed in JP-A-63-235493, there is a method in which a mixed oxide of iridium oxide and tantalum oxide is coated on the surface of a metal substrate such as titanium by a wet process.

【0005】しかしながら、この方法ではコーティング
を形成させるためには、比較的多量の金属イリジウムを
必要とするのでコスト的に不利となる。
However, this method is disadvantageous in cost because a relatively large amount of metal iridium is required to form a coating.

【0006】一方、酸化イリジウム膜が陽極電極触媒と
して優れた特性を示すことが、ベニ(Beni)らによって明
らかにされている(ネイチャー誌、第 282巻、 281〜28
3 頁、1979年11月15日発行)。これによると、酸化イリ
ジウムは陽極電極触媒としてイリジウムを凌ぐ優れた特
性があり、さらには反応性スパッタ法により製造された
酸化イリジウム膜は、陽極酸化法によって製造された酸
化イリジウム膜に比べ優れた陽極電極触媒としての特性
をもつことが示されている。しかしながら、この方法で
は基材と同程度の面積をもつ板状のイリジウムをターゲ
ット材料に用いる必要があるので、コスト的に不利とな
る。
On the other hand, it has been revealed by Beni et al. That an iridium oxide film exhibits excellent properties as an anode electrode catalyst (Nature, Vol. 282, 281-28).
3 pages, issued November 15, 1979). According to this, iridium oxide has superior properties over iridium as an anode electrode catalyst, and furthermore, the iridium oxide film produced by the reactive sputtering method has a better anode than the iridium oxide film produced by the anodic oxidation method. It is shown to have properties as an electrocatalyst. However, in this method, it is necessary to use plate-like iridium having the same area as the base material as the target material, which is disadvantageous in cost.

【0007】また、特公昭62-57707号に開示された方
法、即ち予め公知の洗浄方法により表面洗浄された金属
基材上に金属イリジウムと炭素からなる複合膜を250
℃程度で加熱酸化することによる酸化イリジウム膜の製
造方法が知られている。しかしながら、例えばチタンな
どを公知の洗浄方法で洗浄し、上記の方法に従って製造
された酸化イリジウム膜は、硫酸などの酸性水溶液中に
おいて通電するとすぐに剥離を起こすという問題が生じ
る。
Also, a composite film made of metal iridium and carbon is coated on a metal substrate whose surface has been cleaned by a known cleaning method by a method disclosed in Japanese Patent Publication No. 62-57707.
There is known a method for producing an iridium oxide film by heating and oxidizing at about ° C. However, there arises a problem that an iridium oxide film produced by washing a titanium or the like by a known washing method and producing the iridium oxide film in accordance with the above-described method immediately peels off when an electric current is applied in an acidic aqueous solution such as sulfuric acid.

【0008】以上のように、従来技術ではコスト的に有
利であり且つ電気化学的に安定した酸化イリジウム/金
属接合体は未だ得られていない。
As described above, in the prior art, an iridium oxide / metal junction which is cost-effective and electrochemically stable has not yet been obtained.

【0009】[0009]

【問題点を解決するための手段】本発明者は、上記従来
技術に鑑み鋭意研究を重ねた結果、酸化イリジウム膜の
形成に先立って、金属基材を特定条件下で電解処理を施
すことにより優れた陽極電極触媒特性をもつ接合体が得
られることを見出した。
Means for Solving the Problems The present inventor has conducted intensive studies in view of the above prior art, and as a result, prior to forming an iridium oxide film, the metal substrate was subjected to electrolytic treatment under specific conditions. It has been found that a joined body having excellent anode electrode catalytic properties can be obtained.

【0010】即ち、本発明は下記の酸化イリジウム/金
属接合体の製造方法を提供するものである。 1.金属基材上に金属イリジウムと炭素からなる複合膜
を形成させ、ついで加熱酸化させることにより該複合膜
を酸化イリジウム膜とする酸化イリジウム膜/金属接合
体の製造方法において、予め該金属基材に交流電圧を硫
酸水溶液中で印加することにより、該金属基材の表面電
解処理を行なうことを特徴とする酸化イリジウム膜/金
属接合体の製造方法。 2.金属基材がチタンである上記第1項記載の酸化イリ
ジウム膜/金属接合体の製造方法。
That is, the present invention provides the following method for producing an iridium oxide / metal junction. 1. In the method for producing an iridium oxide film / metal assembly, in which a composite film made of metal iridium and carbon is formed on a metal substrate and then heated and oxidized to make the composite film an iridium oxide film, A method for producing an iridium oxide film / metal assembly, wherein a surface electrolytic treatment of the metal substrate is performed by applying an AC voltage in an aqueous sulfuric acid solution. 2. 2. The method for producing an iridium oxide film / metal assembly according to claim 1, wherein the metal substrate is titanium.

【0011】以下、本発明について詳細に説明する。Hereinafter, the present invention will be described in detail.

【0012】本発明で用いることのできる金属基材とし
ては、チタン、白金、タンタルなどが挙げられるが、そ
の中でも特にチタンが好ましい。
Examples of the metal substrate that can be used in the present invention include titanium, platinum, tantalum, etc. Among them, titanium is particularly preferable.

【0013】まず、電解処理方法は、金属基材を硫酸水
溶液中に浸漬し、交流電圧を印加する。交流電圧として
は、飽和甘コウ電極を基準電極として、例えば-0.25Vを
下限、 1.25Vを上限とする周期30秒の三角波の交流電位
を1分間〜数時間、好ましくは30〜60分間印加する。
尚、処理条件はこれに限定されるものではなく、-0.5〜
0Vを下限電位の範囲、 1〜1.5Vを上限電位の範囲とする
矩形波、正弦波などの交流電圧を印加してもよい。
First, in the electrolytic treatment method, a metal substrate is immersed in a sulfuric acid aqueous solution, and an AC voltage is applied. As the AC voltage, using a saturated sweet potato electrode as a reference electrode, for example, an AC potential of a triangular wave having a period of 30 seconds with a lower limit of -0.25 V and an upper limit of 1.25 V is applied for 1 minute to several hours, preferably for 30 to 60 minutes. .
In addition, processing conditions are not limited to this, -0.5 to
An AC voltage such as a rectangular wave or a sine wave having 0 V as a lower limit potential range and 1 to 1.5 V as an upper limit potential range may be applied.

【0014】上記硫酸水溶液の濃度は、0.05〜4mol/l程
度、好ましくは 0.5〜1mol/l程度で使用する。
The concentration of the aqueous sulfuric acid solution is about 0.05 to 4 mol / l, preferably about 0.5 to 1 mol / l.

【0015】電解処理後、イリジウム−炭素複合膜の形
成を行なう。これは一般に採用されている真空下での蒸
着法、例えば電子ビーム蒸着法、又はスパッタリング法
等により行なうことができる。より具体的には、(i) イ
リジウムと炭素とを別々の蒸発源から電子ビームを用い
て蒸発させ、同一基板上に複合膜を形成させる電子ビー
ム二元蒸着法、(ii)黒鉛るつぼにイリジウムを収容し、
電子ビームを用いてイリジウムとともに炭素を蒸発さ
せ、基板上に複合膜を形成させる方法、(iii) 炭素上に
イリジウムを配置したものをターゲットとして、アルゴ
ンガス中でスパッタリングを行なうことにより複合膜を
形成させる方法等が挙げられる。但し、イリジウム−炭
素複合膜はこれらの例示した方法だけではなく、他の方
法によっても形成され得ることはいうまでもない。
After the electrolytic treatment, an iridium-carbon composite film is formed. This can be performed by a generally employed evaporation method under vacuum, for example, an electron beam evaporation method or a sputtering method. More specifically, (i) iridium and carbon are evaporated using electron beams from separate evaporation sources to form a composite film on the same substrate, and (ii) iridium is placed in a graphite crucible. To accommodate
A method in which carbon is evaporated together with iridium using an electron beam to form a composite film on a substrate, and (iii) a composite film is formed by sputtering in argon gas using a target having iridium disposed on carbon as a target. And the like. However, it goes without saying that the iridium-carbon composite film can be formed not only by these exemplified methods but also by other methods.

【0016】蒸発源を制御することによって、任意の組
成比をもつイリジウム−炭素複合膜が得られるが、加熱
酸化を行なったとき、複合膜におけるイリジウムの炭素
に対する組成比が0.05〜0.30の範囲において、酸化膜の
形成が良好となる。すなわち、複合膜中のイリジウムの
炭素に対する組成比が0.05未満の場合及び0.30を超えた
場合、加熱酸化においてイリジウム−炭素複合膜からの
炭素の脱離が不充分となる。
By controlling the evaporation source, an iridium-carbon composite film having an arbitrary composition ratio can be obtained. However, when thermal oxidation is performed, when the composition ratio of iridium to carbon in the composite film is in the range of 0.05 to 0.30. In addition, the formation of an oxide film is improved. That is, when the composition ratio of iridium to carbon in the composite film is less than 0.05 or more than 0.30, desorption of carbon from the iridium-carbon composite film becomes insufficient during thermal oxidation.

【0017】次に、基板上に形成されたイリジウム−炭
素複合膜を大気中 225〜350 ℃程度、10〜20分間程度で
加熱酸化することによって、所望の酸化イリジウム膜を
得る。加熱酸化雰囲気は酸化イリジウム膜が形成される
限り特に限定されるものではなく、例えば酸素富化雰囲
気、酸素及び水蒸気富化雰囲気としてもよい。
Next, the desired iridium oxide film is obtained by heating and oxidizing the iridium-carbon composite film formed on the substrate in the air at about 225 to 350 ° C. for about 10 to 20 minutes. The heating oxidizing atmosphere is not particularly limited as long as the iridium oxide film is formed, and may be, for example, an oxygen-enriched atmosphere or an oxygen- and steam-enriched atmosphere.

【0018】[0018]

【発明の効果】本発明方法による酸化イリジウム膜/金
属接合体は優れた電気化学安定性を発揮できるので、メ
ッキ等の際の酸素発生過電圧を低減でき、エネルギー効
率の点において非常に有効である。
The iridium oxide film / metal assembly according to the method of the present invention can exhibit excellent electrochemical stability, can reduce oxygen overvoltage during plating or the like, and is very effective in terms of energy efficiency. .

【0019】また、製造に用いる金属イリジウムも少量
で済むので、コスト的にも非常に有利である。
Further, since only a small amount of metal iridium is required for production, it is very advantageous in terms of cost.

【0020】[0020]

【実施例】以下、実施例を示し、本発明の特徴とすると
ころをより一層明瞭にする。
The following examples are provided to further clarify the features of the present invention.

【0021】[0021]

【実施例1】チタン基材(寸法:1cm× 3〜4cm ×1mm )
を0.5mol/lの硫酸水溶液中に浸漬し、飽和甘コウ電極を
標準電極として、-0.25 〜 1.25Vの範囲内で周期30秒の
三角波を印加し、1時間電位走査を行なうことによって
表面を清浄化した。
[Example 1] Titanium base material (dimensions: 1 cm x 3-4 cm x 1 mm)
Is immersed in a 0.5 mol / l sulfuric acid aqueous solution, a triangular wave with a period of 30 seconds is applied within a range of -0.25 to 1.25 V using a saturated sweet potato electrode as a standard electrode, and a potential scan is performed for one hour to make a surface. Cleaned.

【0022】その後、特公昭62-57707号公報に記載され
た方法に従い、つまりイリジウム粉末を黒鉛るつぼに入
れ、加速電圧6kV 、エミッション電流 180〜200mA の条
件下に電子ビーム蒸着を行なうことにより、チタン基材
上にイリジウム−炭素複合膜を形成し、ついで上記複合
膜を大気中 250℃で10分間加熱して、加熱酸化イリジウ
ム膜を形成させた。酸化イリジウム膜中のイリジウム量
は蛍光X線分析の結果、約90μg/cm2 であった。
Thereafter, according to the method described in JP-B-62-57707, that is, iridium powder is put into a graphite crucible, and electron beam evaporation is performed under the conditions of an acceleration voltage of 6 kV and an emission current of 180 to 200 mA, thereby obtaining titanium. An iridium-carbon composite film was formed on a substrate, and then the composite film was heated in the air at 250 ° C. for 10 minutes to form a heated iridium oxide film. The amount of iridium in the iridium oxide film was about 90 μg / cm 2 as a result of X-ray fluorescence analysis.

【0023】以上のようにして得られた酸化イリジウム
膜/チタン接合体(電極寸法:1cm×1.4cm )を 0.5mol
/l の硫酸水溶液中に浸漬し、飽和甘コウ電極を基準電
極として1.5Vの電位で陽極電極特性を調べた。このとき
の電流密度の時間変化を第1図中の実線に示す。
0.5 mol of the iridium oxide film / titanium assembly (electrode size: 1 cm × 1.4 cm) obtained as described above
/ l of sulfuric acid aqueous solution, and the anode electrode characteristics were examined at a potential of 1.5 V using a saturated sweet pepper electrode as a reference electrode. The time change of the current density at this time is shown by a solid line in FIG.

【0024】これより、50mA/cm2 の電流密度で酸素の
発生が認められた。
From this, generation of oxygen was recognized at a current density of 50 mA / cm 2 .

【0025】[0025]

【比較例1】特開昭63-235493 号公報に記載されている
湿式プロセスにより形成された酸化イリジウムと酸化タ
ンタルの混合酸化物/チタン接合体(電極寸法:1cm ×
0.7cm)を0.5mol/lの硫酸水溶液中に浸漬し、飽和甘コ
ウ電極を基準電極として1.5Vの電位で陽極電極特性を調
べた。このときの電流密度の時間変化を第1図中の破線
に示す。これより、40〜53mA/cm2 の電流密度で酸素の
発生が認められた。また、蛍光X線分析の結果、この酸
化イリジウムと酸化タンタルの混合酸化物中のイリジウ
ム量は約 3mg/cm2 であった。
Comparative Example 1 A mixed oxide / titanium composite of iridium oxide and tantalum oxide formed by a wet process described in JP-A-63-235493 (electrode size: 1 cm ×
(0.7 cm) was immersed in a 0.5 mol / l sulfuric acid aqueous solution, and the anode electrode characteristics were examined at a potential of 1.5 V using a saturated sweet pepper electrode as a reference electrode. The time change of the current density at this time is shown by a broken line in FIG. From this, generation of oxygen was recognized at a current density of 40 to 53 mA / cm 2 . As a result of X-ray fluorescence analysis, the amount of iridium in the mixed oxide of iridium oxide and tantalum oxide was about 3 mg / cm 2 .

【0026】これより、本発明で得られる酸化イリジウ
ム膜/チタン接合体は、極めて少ないイリジウム担持量
で、湿式プロセスにより形成された酸化イリジウムと酸
化タンタルの混合酸化物/チタン接合体と同程度の効果
が発揮されていることがわかる。
As a result, the iridium oxide film / titanium joined body obtained by the present invention has an extremely small iridium loading amount and is comparable to a mixed oxide / titanium joined body of iridium oxide and tantalum oxide formed by a wet process. It can be seen that the effect is exhibited.

【0027】[0027]

【比較例2】公知の基板洗浄方法を組み合わせた方法、
つまり中性洗剤を用いる方法、薬品・溶剤を用いる方法
及び超音波洗浄方法を組み合わせた洗浄方法により、酸
化スズ透明電極付きガラス基板の洗浄を行なった。
Comparative Example 2 A method combining known substrate cleaning methods,
That is, the glass substrate with the tin oxide transparent electrode was cleaned by a cleaning method combining a method using a neutral detergent, a method using a chemical / solvent, and an ultrasonic cleaning method.

【0028】つづいて、前記の特公昭62-57707号公報に
記載された方法に従ってイリジウム粉末を黒鉛るつぼに
入れ、加速電圧6kV 、エミッション電流 180〜200mA の
条件下に電子ビーム蒸着を行なうことにより、チタン基
材上にイリジウム−炭素複合膜を形成し、ついで上記複
合膜を大気中 250℃で10分間加熱して、加熱酸化イリジ
ウム膜を形成させた。酸化イリジウム膜中のイリジウム
量は蛍光X線分析の結果、約50μg/cm2 であった。つ
ぎに、酸化イリジウム膜/酸化スズ透明電極付きガラス
基板接合体(電極寸法:1.1cm ×2.0cm )を0.5 mol/l
の硫酸水溶液に浸漬し、飽和甘コウ電極を基準電極とし
て1.5Vの電位で陽極電極特性を調べた結果、通電開始1
分後において約16mA/cm2 、同1時間後において約13mA
/cm2 の電流密度での酸素発生が認められた。ベニらの
報告による反応性スパッタ法により製造された酸化イリ
ジウム膜の陽極電極触媒特性との比較をより明らかにす
るため、長時間の通電実験を行なった結果、20時間後に
おいて約10mA/cm2 の電流密度での酸素発生が認められ
た。飽和甘コウ電極を基準電極としての1.5Vの電位は、
水素電極を基準電極とする約1.75V に対応するが、ベニ
らの報告による反応性スパッタ法により製造された酸化
イリジウム膜は0.5mol/lの硫酸水溶液中での水素電極を
基準電極として1.75V の電位を印加して17時間通電した
後では約10mA/cm2 の電流密度で酸素発生があり、酸化
イリジウム膜/酸化スズ透明電極付きガラス基板接合体
の陽極電極触媒特性と同程度であることがわかる。
Subsequently, the iridium powder was placed in a graphite crucible according to the method described in Japanese Patent Publication No. 62-57707, and electron beam evaporation was performed under the conditions of an acceleration voltage of 6 kV and an emission current of 180 to 200 mA. An iridium-carbon composite film was formed on a titanium substrate, and then the composite film was heated in the air at 250 ° C. for 10 minutes to form a heated iridium oxide film. The amount of iridium in the iridium oxide film was about 50 μg / cm 2 as a result of X-ray fluorescence analysis. Next, a glass substrate assembly having an iridium oxide film / tin oxide transparent electrode (electrode dimensions: 1.1 cm × 2.0 cm) was added at 0.5 mol / l.
The electrode was immersed in a sulfuric acid aqueous solution, and the characteristics of the anode electrode were examined at a potential of 1.5 V with the saturated sweet pepper electrode as a reference electrode.
About 16 mA / cm 2 after 1 minute, about 13 mA after 1 hour
Oxygen evolution at a current density of / cm 2 was observed. To compare with the anode catalytic properties of iridium oxide film produced by reactive sputtering by Benira reported more apparent, the result of performing a long energization experiment, about 10 mA / cm 2 after 20 hours Oxygen evolution was observed at a current density of. The potential of 1.5 V using the saturated sweetfish electrode as a reference electrode is
Corresponding to about 1.75 V with the hydrogen electrode as the reference electrode, the iridium oxide film produced by the reactive sputtering method reported by Beni et al. Was 1.75 V with the hydrogen electrode in a 0.5 mol / l sulfuric acid aqueous solution as the reference electrode. Oxygen is generated at a current density of about 10 mA / cm 2 after applying a potential of 17 hours and conducting electricity for 17 hours, which is comparable to the anode electrode catalytic properties of the glass substrate assembly with an iridium oxide film / tin oxide transparent electrode. I understand.

【0029】また、これより本発明で得られる酸化イリ
ジウム膜/チタン接合体は、公知の方法で得られる酸化
イリジウム膜/酸化スズ透明電極付きガラス基板接合体
及び反応性スパッタ法により製造された酸化イリジウム
膜を凌ぐ効果が発揮されていることがわかる。
Further, the iridium oxide film / titanium assembly obtained by the present invention can be obtained by a known method using a glass substrate assembly having an iridium oxide film / tin oxide transparent electrode and an oxide manufactured by a reactive sputtering method. It can be seen that the effect over the iridium film is exhibited.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例1で得られた酸化イリジウム膜/チタン
接合体の酸素発生反応電流密度の時間変化を示すグラフ
(実線)と、比較例1で得られた酸化イリジウムと酸化
タンタルの混合酸化物/チタン接合体の酸素発生反応電
流密度の時間変化を示すグラフ(破線)である。
FIG. 1 is a graph (solid line) showing a time change of an oxygen generation reaction current density of an iridium oxide film / titanium assembly obtained in Example 1, and a mixed oxidation of iridium oxide and tantalum oxide obtained in Comparative Example 1. 4 is a graph (broken line) showing a time change of an oxygen generation reaction current density of a product / titanium joined body.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI C25B 11/04 C25B 11/04 A 11/08 11/08 A 11/10 11/10 A (56)参考文献 特開 平2−133599(JP,A) 特開 昭60−162800(JP,A) 特公 昭48−3954(JP,B1) (58)調査した分野(Int.Cl.6,DB名) C25F 1/00 - 1/08 C25B 11/10 C23C 8/10 - 8/16──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification symbol FI C25B 11/04 C25B 11/04 A 11/08 11/08 A 11/10 11/10 A (56) References -133599 (JP, A) JP-A-60-162800 (JP, A) JP-B-48-3954 (JP, B1) (58) Fields investigated (Int. Cl. 6 , DB name) C25F 1/00- 1/08 C25B 11/10 C23C 8/10-8/16

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 金属基材上に金属イリジウムと炭素から
なる複合膜を形成させ、ついで加熱酸化させることによ
り該複合膜を酸化イリジウム膜とする酸化イリジウム膜
/金属接合体の製造方法において、予め該金属基材に交
流電圧を硫酸水溶液中で印加することにより、該金属基
材の表面電解処理を行なうことを特徴とする酸化イリジ
ウム膜/金属接合体の製造方法。
1. A method of manufacturing an iridium oxide film / metal assembly in which a composite film made of metal iridium and carbon is formed on a metal substrate and then heated and oxidized to make the composite film an iridium oxide film. A method for producing an iridium oxide film / metal assembly, wherein a surface electrolytic treatment of the metal substrate is performed by applying an AC voltage to the metal substrate in an aqueous sulfuric acid solution.
【請求項2】 金属基材がチタンである請求項1記載の
酸化イリジウム膜/金属接合体の製造方法。
2. The method for producing an iridium oxide film / metal assembly according to claim 1, wherein the metal substrate is titanium.
JP2410724A 1990-12-13 1990-12-13 Method for producing iridium oxide film / metal bonded body Expired - Lifetime JP2777677B2 (en)

Priority Applications (1)

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JP2410724A JP2777677B2 (en) 1990-12-13 1990-12-13 Method for producing iridium oxide film / metal bonded body

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Application Number Priority Date Filing Date Title
JP2410724A JP2777677B2 (en) 1990-12-13 1990-12-13 Method for producing iridium oxide film / metal bonded body

Publications (2)

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JPH0586499A JPH0586499A (en) 1993-04-06
JP2777677B2 true JP2777677B2 (en) 1998-07-23

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Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60162800A (en) * 1984-01-31 1985-08-24 Mitsubishi Heavy Ind Ltd Method for decontaminating surface of metallic member
JPH02133599A (en) * 1988-11-11 1990-05-22 Agency Of Ind Science & Technol Production of iridium oxide film

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