JP2754765B2 - 化合物半導体結晶の製造方法 - Google Patents

化合物半導体結晶の製造方法

Info

Publication number
JP2754765B2
JP2754765B2 JP1187990A JP18799089A JP2754765B2 JP 2754765 B2 JP2754765 B2 JP 2754765B2 JP 1187990 A JP1187990 A JP 1187990A JP 18799089 A JP18799089 A JP 18799089A JP 2754765 B2 JP2754765 B2 JP 2754765B2
Authority
JP
Japan
Prior art keywords
melt
crystal
substrate
source
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1187990A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0350840A (ja
Inventor
哲男 ▲さい▼藤
哲也 河内
保 山本
一男 尾▲崎▼
功作 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1187990A priority Critical patent/JP2754765B2/ja
Priority to EP90113754A priority patent/EP0413159A2/en
Publication of JPH0350840A publication Critical patent/JPH0350840A/ja
Priority to US08/007,829 priority patent/US5399503A/en
Application granted granted Critical
Publication of JP2754765B2 publication Critical patent/JP2754765B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1187990A 1989-07-19 1989-07-19 化合物半導体結晶の製造方法 Expired - Fee Related JP2754765B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1187990A JP2754765B2 (ja) 1989-07-19 1989-07-19 化合物半導体結晶の製造方法
EP90113754A EP0413159A2 (en) 1989-07-19 1990-07-18 Process for growing compound semiconductor layers and detector using such layers
US08/007,829 US5399503A (en) 1989-07-19 1993-01-22 Method for growing a HgCdTe epitaxial layer on a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1187990A JP2754765B2 (ja) 1989-07-19 1989-07-19 化合物半導体結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH0350840A JPH0350840A (ja) 1991-03-05
JP2754765B2 true JP2754765B2 (ja) 1998-05-20

Family

ID=16215694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1187990A Expired - Fee Related JP2754765B2 (ja) 1989-07-19 1989-07-19 化合物半導体結晶の製造方法

Country Status (3)

Country Link
US (1) US5399503A (enExample)
EP (1) EP0413159A2 (enExample)
JP (1) JP2754765B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2570646B2 (ja) * 1994-12-13 1997-01-08 日本電気株式会社 Ｓｉベ−ス半導体結晶基板及びその製造方法
US5718098A (en) * 1994-12-30 1998-02-17 Pharmagraphics L.L.C., Midwest Method for producing sample package
US5804463A (en) * 1995-06-05 1998-09-08 Raytheon Ti Systems, Inc. Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors
US5861321A (en) * 1995-11-21 1999-01-19 Texas Instruments Incorporated Method for doping epitaxial layers using doped substrate material
US6091127A (en) * 1997-04-02 2000-07-18 Raytheon Company Integrated infrared detection system
US6613162B1 (en) * 1999-10-25 2003-09-02 Rensselaer Polytechnic Institute Multicomponent homogeneous alloys and method for making same
WO2006028868A2 (en) 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US8371705B2 (en) * 2008-03-11 2013-02-12 The United States Of America As Represented By The Secretary Of The Army Mirrors and methods of making same
WO2014026292A1 (en) * 2012-08-15 2014-02-20 Mcmaster University Arbitrarily thin ultra smooth film with built-in separation ability and method of forming the same
CN113782416B (zh) * 2021-09-13 2024-03-05 安徽光智科技有限公司 碲镉汞液相外延生长源衬底及其制备方法、碲镉汞液相外延生长方法
CN114914315B (zh) * 2022-05-19 2024-07-09 华东师范大学 一种基于深能级缺陷态的CdTe宽光谱探测器及其工作方法
CN119901778B (zh) * 2025-03-31 2025-07-08 新磊半导体科技(苏州)股份有限公司 一种分子束外延系统中外延层生长温度的确定方法
CN120519960B (zh) * 2025-07-25 2025-09-16 浙江拓感科技有限公司 基于图形化蓝宝石衬底的碲镉汞材料液相外延方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252533A (enExample) * 1959-06-30 1900-01-01
US3619283A (en) * 1968-09-27 1971-11-09 Ibm Method for epitaxially growing thin films
US3725135A (en) * 1968-10-09 1973-04-03 Honeywell Inc PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te
US3779803A (en) * 1969-11-17 1973-12-18 Ibm Infrared sensitive semiconductor device and method of manufacture
US3642529A (en) * 1969-11-17 1972-02-15 Ibm Method for making an infrared sensor
JPS5532021B2 (enExample) * 1974-10-26 1980-08-22
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
FR2460545A1 (fr) * 1979-06-29 1981-01-23 Telecommunications Sa Procede de preparation de couches de hg1-xcdxte
FR2484469A1 (fr) * 1980-02-22 1981-12-18 Telecommunications Sa Procede de preparation de couches homogenes de hg1-xcdxte
US4317689A (en) * 1980-07-18 1982-03-02 Honeywell Inc. Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer
JPS582036A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 半導体結晶の製造方法
US4487813A (en) * 1982-12-06 1984-12-11 Ford Aerospace & Communications Corporation Composition control of CSVPE HgCdTe
US4447470A (en) * 1982-12-06 1984-05-08 Ford Aerospace & Communications Corporation Composition control of CSVPE HgCdTe
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
US4697543A (en) * 1983-12-13 1987-10-06 Honeywell Inc. Liquid phase epitaxy slider/stator assembly having non-wetting growth well liners
US4846926A (en) * 1985-08-26 1989-07-11 Ford Aerospace & Communications Corporation HcCdTe epitaxially grown on crystalline support
US4655848A (en) * 1985-08-26 1987-04-07 Ford Aerospace & Communications Corporation HgCdTe epitaxially grown on crystalline support
US4648917A (en) * 1985-08-26 1987-03-10 Ford Aerospace & Communications Corporation Non isothermal method for epitaxially growing HgCdTe
JPS6345198A (ja) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd 多元系結晶の製造方法
GB2212976B (en) * 1987-03-18 1991-05-01 Philips Electronic Associated Manufacture of electronic components of cadmium mercury telluride
IT1211385B (it) * 1987-10-06 1989-10-18 Selenia Ind Elettroniche Metodo per la fabbricazione di strati monocristallini di tellururo di cadmio e mercurio

Also Published As

Publication number Publication date
EP0413159A3 (enExample) 1994-03-30
US5399503A (en) 1995-03-21
EP0413159A2 (en) 1991-02-20
JPH0350840A (ja) 1991-03-05

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