JP2713787B2 - Semiconductor wet cleaning method - Google Patents
Semiconductor wet cleaning methodInfo
- Publication number
- JP2713787B2 JP2713787B2 JP1327362A JP32736289A JP2713787B2 JP 2713787 B2 JP2713787 B2 JP 2713787B2 JP 1327362 A JP1327362 A JP 1327362A JP 32736289 A JP32736289 A JP 32736289A JP 2713787 B2 JP2713787 B2 JP 2713787B2
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- Japan
- Prior art keywords
- cleaning
- hydrofluoric acid
- oxide film
- concentration
- solution
- Prior art date
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体の洗浄技術に係り、特に弗酸溶液に
よる洗浄方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor cleaning technique, and more particularly to a cleaning method using a hydrofluoric acid solution.
従来より、半導体の湿式洗浄には、弗酸洗浄液もしく
は、過酸化水素にアンモニア、硫酸あるいは塩酸を加え
た洗浄液に、半導体ウエハを浸漬して汚染物を分解除去
し、その後、純水によりすすぎを行なうという方法が採
用されている。Conventionally, for wet cleaning of semiconductors, a semiconductor wafer is immersed in a hydrofluoric acid cleaning solution or a cleaning solution obtained by adding ammonia, sulfuric acid or hydrochloric acid to hydrogen peroxide to decompose and remove contaminants, and then rinsed with pure water. The method of doing is adopted.
しかしながら、半導体素子の集積度の向上に伴つて、
従来では問題とならなかつた、ごくわずかの汚染でも素
子の物性に大きな影響を与えるようになつてきたため、
半導体製造工程内の洗浄上りの半導体素材表面の清浄度
が一段と厳しく要求されるようになりつつある。半導体
素子表面の汚染の中には、通常パーテイクルと呼ばれ
る、物理的残留不純物による汚染と、物理的、光学的に
は観察できない金属不純物による汚染などがあるが、従
来の技術では要求される清浄度を、半導体ウエハに与え
るまでにはいたつていない。However, with the increase in the degree of integration of semiconductor devices,
In the past, even the slightest contamination, which had not been a problem in the past, had a major effect on the physical properties of the device,
The degree of cleanliness of the surface of a semiconductor material after cleaning in a semiconductor manufacturing process is increasingly required. There are two types of contamination on the surface of a semiconductor element: contamination by physical residual impurities, usually called particles, and contamination by metal impurities that cannot be physically and optically observed. Has not been applied to semiconductor wafers.
弗酸を含む溶液を用いた洗浄では、第７図に示すよう
に実線を境にして、被洗浄物であるシリコンウエハの表
面状態は親水域と疎水域に分けられる。従来の技術では
表面酸化膜層に取り込まれた金属を除去するためには、
この疎水域における洗浄処理が有効とされてきた。しか
しながら、疎水液で上がつたシリコンウエハは、活性な
Si表面を形成しており、容易に滞電し、空気に触れると
空気中のパーテイクルを多量に付着させる結果となる。In cleaning using a solution containing hydrofluoric acid, the surface state of the silicon wafer to be cleaned is divided into a hydrophilic region and a hydrophobic region on the solid line as shown in FIG. In the prior art, in order to remove the metal taken in the surface oxide film layer,
Cleaning treatment in this hydrophobic region has been considered effective. However, silicon wafers filled with a hydrophobic liquid are not active.
Since the Si surface is formed, the electricity is easily charged, and when it comes into contact with air, a large amount of particles in the air adhere to the surface.
また、過酸化水素を含む洗浄液を用いた洗浄では、反
対に酸化膜を形成することにより活性なSi表面を覆い、
パーテイクルの付着を防ぐことはできるが酸化膜形成時
に金属不純物を取り込んでしまうという危険があつた。
いずれの方法であつても、また両者の組み合わせたもの
でも、低パーテイクル化と金属不純物の低濃度化とを両
立するのは難しかつた。On the other hand, in cleaning using a cleaning solution containing hydrogen peroxide, an active silicon surface is covered by forming an oxide film.
Although particles can be prevented from adhering, there is a risk that metal impurities may be taken in at the time of forming the oxide film.
Either method or a combination of both methods has made it difficult to achieve both a low particle content and a low metal impurity concentration.
なお、弗酸及び硝酸を同時に用いる洗浄技術では、特
開昭64−77130号公報に開示されるものがあるが、この
方法では、一旦弗酸により除かれたシリコン表面の金属
等の汚染物が、硝酸によるシリコン酸化膜の形成時に、
この酸化膜表面に再吸着する危険がある。A cleaning technique using hydrofluoric acid and nitric acid at the same time is disclosed in Japanese Patent Application Laid-Open No. 64-77130. In this method, contaminants such as metals on the silicon surface once removed by hydrofluoric acid are removed. When forming a silicon oxide film with nitric acid,
There is a risk of re-adsorption on the oxide film surface.
本発明は極く薄いHF水溶液を使用して、表面酸化膜層
を徐々にエツチングし、該酸化膜中の金属不純物及びそ
の層を分解除去することにより残存の不純物が存在しな
い、より薄膜からなる酸化膜層を残すことによつて親水
性を維持することができ、よつてパーテイクルの付着を
抑えることを目的としている。The present invention uses an extremely thin HF aqueous solution, gradually etches the surface oxide film layer, decomposes and removes metal impurities and the layer in the oxide film, and eliminates the remaining impurities, thereby forming a thinner film. The purpose of the present invention is to maintain the hydrophilicity by leaving the oxide film layer, thereby suppressing the adhesion of particles.
本発明は、以上のような従来洗浄技術での問題点を解
決するものであり、本発明の技術的構成は表面酸化膜層
を有する半導体ウエハを103≦〔純水（H2O）／弗酸（H
F）〕≦106（重量比）で成る弗酸水溶液で処理し、均質
な不純物を含まない酸化膜を残存させることを特徴とす
る半導体の湿式洗浄方法にある。The present invention solves the above-mentioned problems in the conventional cleaning technique. The technical constitution of the present invention is to provide a semiconductor wafer having a surface oxide film layer with 10 3 ≦ [pure water (H 2 O) / Hydrofluoric acid (H
F)] A wet cleaning method for semiconductors, characterized by treating with an aqueous solution of hydrofluoric acid of ≦ 10 6 (weight ratio) to leave an oxide film containing no uniform impurities.
また、洗浄液をオーバーフローさせながら、順次清浄
な前記弗酸溶液を追加すると効果的である。Further, it is effective to add the clean hydrofluoric acid solution sequentially while overflowing the cleaning liquid.
さらにはまた、酸化膜をさらに均質化させるべく、前
記弗酸溶液による洗浄の後に硝酸〔HNO3〕若しくは、過
酸化水素水〔H2O2〕あるいは、これらに類する酸化力の
ある液、ガスたとえば、オゾンを用いた洗浄工程を追加
しても良い。Furthermore, in order to further homogenize the oxide film, nitric acid [HNO 3 ] or hydrogen peroxide solution [H 2 O 2 ] or a similar oxidizing liquid or gas after cleaning with the hydrofluoric acid solution is used. For example, a cleaning step using ozone may be added.
本発明による洗浄方法は、シリコンウエハ表面に形成
される均一な酸化膜を全て除去することなく、最表層の
みを除去して、表面のパーテイクル、金属不純物等の汚
染物を除去することを特徴とする。The cleaning method according to the present invention is characterized in that only the outermost layer is removed without removing all uniform oxide films formed on the surface of the silicon wafer, thereby removing particles on the surface and contaminants such as metal impurities. I do.
このメカニズムを推定すると第８図のようにモデル比
される。弗酸は、シリコン表面上の酸化膜、すなわちSi
O2に対して通常、以下の式に表わされる強いエツチン
グ作用がある。When this mechanism is estimated, the model is compared as shown in FIG. Hydrofluoric acid is an oxide film on the silicon surface,
O 2 usually has a strong etching action represented by the following formula.
4HF＋SiO2→SiF4＋2H2O …… 先にあげた従来技術ではこの強いエツチング作用のた
めにウエハ上の酸化膜を全て取り去つてしまいその結果
活性なSi表面である疎水面を露呈するに至る（第８図
Ｉ）。また、半親水面といわれるものは、活性なSi表面
と残留あるいは、再形成された酸化膜面を持つものと考
えられる（第８図II）。この両者とも、活性Si表面をも
つために空気中のパーテイクル12を吸着させるものと推
定される。これに対して、本発明による洗浄方法では、
ウエハ上の酸化膜の一部表層を除去するために留め、活
性Si表面を露出させないため、酸化膜表層部の濃い金属
不純物帯域のみを除去し、表面金属濃度を下げると共
に、パーテイクル吸着のない清浄なSi表面を形成させる
ことができる（第８図III）と考えられる。4HF + SiO 2 → SiF 4 + 2H 2 O In the above-mentioned prior art, due to this strong etching action, all the oxide film on the wafer is removed, and as a result, the hydrophobic surface which is the active Si surface is exposed. (FIG. 8I). The semi-hydrophilic surface is considered to have an active Si surface and a residual or reformed oxide film surface (FIG. 8, II). It is presumed that both of them have an active Si surface and thus adsorb particles 12 in air. In contrast, in the cleaning method according to the present invention,
To remove the surface of the oxide film on the wafer and remove the active Si surface, only the dark metal impurity band on the surface of the oxide film is removed to reduce the surface metal concentration and clean without particle adsorption. It is considered that a suitable Si surface can be formed (FIG. 8, III).
また、本発明方法を実施するに好適な洗浄装置は、洗
浄液中の弗酸濃度の安定化のために、洗浄原液と純水と
を、洗浄槽前まで別ラインにより流量調節して輸送し、
アスピレータで合流させ、混合状態で所定濃度にしつ
つ、連続的に洗浄槽に供給することが好ましい。Further, the cleaning apparatus suitable for carrying out the method of the present invention, for stabilization of the concentration of hydrofluoric acid in the cleaning solution, transport the undiluted cleaning solution and pure water by adjusting the flow rate by another line up to the front of the cleaning tank,
It is preferable to continuously supply to the cleaning tank while merging with an aspirator to obtain a predetermined concentration in a mixed state.
本発明において弗酸水溶液の弗酸濃度範囲を限定する
のは、次の理由によるものである： 自然酸化膜厚は初期において、３−10Å，最終的に十
数Åである。この様な酸化膜を数％のオーダのHF水溶液
で洗浄すると、２、３秒以内で半親水領域に達し、酸化
膜の残存厚みを制御しそして均質な膜を得ることは困難
である。本発明の0.1％（純水/HF水溶液比＝103）のHF
水溶液で洗浄すると、半親水領域に達するまでに60秒か
かるが、酸化膜の残存厚みを容易に制御できそして均質
な膜を得ることができる。以上より少なくとも0.1％以
下の濃度のHF水溶液を用いることによつて、制御可能な
良質な残存酸化膜を得ることができる。よつて、上記理
由により低濃度のHFを用いれば良いが、反面不純物の除
去効果が落ちてくる。しかしながら、0.0001％（純水/H
F水溶液比＝106）の濃度で原ウエハの酸化膜中に存在し
ていたアルミニウム含有濃度3.2×104及び鉄含有濃度1.
4×103（双方の濃度はSIMSによるSi相対強度比）は５分
間の処理により、アルミニウム含有濃度は1.3×104及び
鉄含有濃度は0.9×103と半減していることが分かる。更
に長時間処理すれば金属不純物の除去率は更に向上す
る。これらの値から0.0001％のHF濃度は十分実用性のあ
るまた更に0.00001％の薄いHF水溶液においても、除去
効果はあることが推定できるが今実験では確かめていな
い。これまでの実験より、少なくとも、0.0001％から0.
1％の濃度のHF水溶液を用いることによつて酸化膜の厚
みを制御し、均質化しそして不純物量を削減することが
できる。The reason for limiting the hydrofluoric acid concentration range of the hydrofluoric acid aqueous solution in the present invention is as follows: The native oxide film thickness is 3-10 ° at the beginning and finally more than 10 °. When such an oxide film is washed with an HF aqueous solution on the order of several percent, it reaches a semi-hydrophilic region within a few seconds, and it is difficult to control the remaining thickness of the oxide film and obtain a uniform film. 0.1% (pure water / HF aqueous solution ratio = 10 3 ) HF of the present invention
When washing with an aqueous solution, it takes 60 seconds to reach the semi-hydrophilic region, but the remaining thickness of the oxide film can be easily controlled and a uniform film can be obtained. As described above, by using an HF aqueous solution having a concentration of at least 0.1% or less, a controllable high-quality residual oxide film can be obtained. Therefore, although a low concentration of HF may be used for the above reason, the effect of removing impurities is reduced. However, 0.0001% (pure water / H
The concentration of aluminum contained in the oxide film of the original wafer at a concentration of F aqueous solution ratio = 10 6 ) was 3.2 × 10 4 and the iron content was 1.
It can be seen that the concentration of 4 × 10 3 (both concentrations are relative intensity ratios of Si by SIMS) is reduced to half by 1.3 × 10 4 and the concentration of iron by 0.9 × 10 3 by treatment for 5 minutes. If the treatment is performed for a longer time, the removal rate of metal impurities is further improved. From these values, it can be estimated that a HF concentration of 0.0001% is sufficiently practical, and even in a thin HF aqueous solution of 0.00001%, the removal effect can be estimated, but this has not been confirmed in experiments. From previous experiments, at least 0.0001% to 0.
By using a 1% HF aqueous solution, the thickness of the oxide film can be controlled, homogenized, and the amount of impurities can be reduced.
以下の実施例で従来法とは、公知のRCA洗浄やSC−１
洗浄において、過酸化水素にアンモニアと水を加えた洗
浄液にウエハを浸漬して汚染物を分解除去し、純水によ
りすすぎを行う方式であり、この方式を第４図および第
５図では、洗浄液中HF濃度０（ゼロ）として図示してあ
る。In the following examples, the conventional method means a known RCA cleaning or SC-1
In the cleaning, a method of immersing a wafer in a cleaning solution obtained by adding ammonia and water to hydrogen peroxide to decompose and remove contaminants and rinsing with pure water is shown in FIGS. 4 and 5. Shown as medium HF concentration 0 (zero).
〔実施例１〕 第６図は本発明方法を実施するに好適な洗浄装置の一
例を示す模式図である。Embodiment 1 FIG. 6 is a schematic view showing an example of a cleaning apparatus suitable for carrying out the method of the present invention.
図中符号１は洗浄槽でテフロン製ビーカー、２は洗浄
原液供給ライン、３は純水供給ライン、４、４′は流量
調節弁、５はアスピレータである。In the drawing, reference numeral 1 denotes a cleaning tank, a Teflon beaker, 2 a cleaning stock solution supply line, 3 a pure water supply line, 4, 4 'a flow control valve, and 5 an aspirator.
流量調節弁４、４′でそれぞれ流量調節され、原液供
給ライン２から毎分1mlで送られてくる１％弗酸原液
と、純水供給ライン３から毎分10で送られて純水と
が、アスピレータ５で合流して、混合され、重量混合比
純水（H2O）／弗酸（HF）＝106（弗酸濃度1ppm）の洗
浄液として、洗浄槽に連続的に供給される。洗浄液は、
常時清浄に保つため、洗浄槽からオーバーフローさせ
る。The flow rate is controlled by the flow control valves 4 and 4 ', respectively. The 1% hydrofluoric acid stock solution sent from the stock solution supply line 2 at 1 ml per minute and the pure water sent at 10 minutes from the pure water supply line 3 are mixed. Are mixed by an aspirator 5 and mixed, and are continuously supplied to a cleaning tank as a cleaning liquid having a weight mixing ratio of pure water (H 2 O) / hydrofluoric acid (HF) = 10 6 (hydrofluoric acid concentration 1 ppm). The cleaning solution is
Overflow from the washing tank to keep it clean at all times.
第６図の装置を用いて、シリコンウエハ６を５分間洗
浄した。その後、水洗して乾燥した。The silicon wafer 6 was cleaned for 5 minutes using the apparatus shown in FIG. Then, it was washed with water and dried.
さらに、同じ方法にて、洗浄原液の流量のみを毎分10
ml〔H2O/HF＝105（弗酸濃度10ppm）、毎分100ml〔H2O/H
F＝104（弗酸濃度100ppm）と変えたものについて、洗浄
実験を行なつた。Further, in the same manner, only the flow rate of the undiluted cleaning solution is
ml [H 2 O / HF = 10 5 (hydrofluoric acid concentration 10 ppm), 100 ml per minute [H 2 O / H
A cleaning experiment was performed on the sample with F = 10 4 (hydrofluoric acid concentration 100 ppm).
その結果、シリコンウエハ上のパーテイクル及び、表
面金属濃度は各々第４図、第５図に示す通り、いずれも
従来以上の洗浄効果があつたが、とくに純水10に対
し、１％弗酸洗浄原液10mlの混合比率、すなわち、純水
（H2O）／弗酸（HF）＝105（弗酸濃度10ppm）、におい
て最良の品質が得られることがわかつた。As a result, as shown in FIG. 4 and FIG. 5, the particles on the silicon wafer and the surface metal concentration were all more effective than the conventional ones. It was found that the best quality was obtained in a mixing ratio of 10 ml of the stock solution, that is, pure water (H 2 O) / hydrofluoric acid (HF) = 10 5 (hydrofluoric acid concentration 10 ppm).
なお、第１図乃至第３図中の〔実施例１〕は、この弗
酸濃度10ppmのときの値をプロツトした。1 to 3 are plotted with values at a hydrofluoric acid concentration of 10 ppm.
〔実施例２〕 実施例１の純水（H2O）／弗酸（HF）＝105にて洗浄し
たウエハを、過酸化水素水〔H2O2〕を純水にて５％に調
整した別の洗浄槽中に５分間浸し、その後、ウエハを水
洗し、乾燥した。Example 2 A wafer washed with pure water (H 2 O) / hydrofluoric acid (HF) = 10 5 of Example 1 was reduced to 5% hydrogen peroxide solution [H 2 O 2 ] with pure water. The wafer was immersed in another adjusted cleaning tank for 5 minutes, and then the wafer was washed with water and dried.
〔実施例３〕 実施例１の純水（H2O）／弗酸（HF）＝105にて、洗浄
したウエハを、硝酸〔HNO3〕を純水にて、30％に調整し
た別の洗浄槽中に５分間浸し、その後、ウエハを水洗
し、乾燥した。Example 3 A wafer washed with pure water (H 2 O) / hydrofluoric acid (HF) = 10 5 of Example 1 was prepared by adjusting nitric acid [HNO 3 ] to 30% with pure water. Then, the wafer was rinsed with water and dried.
なお、上記３つの実施例による汚染除去の様子は、第
１図乃至第３図に示した。FIGS. 1 to 3 show the manner of removing contamination according to the above three embodiments.
〔発明の効果〕 本発明によれば、第１図のごとくウエハ上パーテイク
ルを従来法と同様に保ちながら、かつ第２図のごとくウ
エハ表面上金属の除去が顕著となる。[Effects of the Invention] According to the present invention, the removal of metal on the wafer surface becomes remarkable as shown in FIG. 2 while maintaining the particles on the wafer as in the conventional method as shown in FIG.
また、第３図のごとく、別の評価品質である酸化膜耐
圧評価においても、従来品と同等であるが、さらに、硝
酸〔NHO3〕、若しくは、過酸化水素水等の酸化力のある
液、ガス等の洗浄工程を追加することにより均質な酸化
膜を形成させ、さらに酸化膜耐圧特性向上に効果があつ
た。Further, as shown in FIG. 3, the oxide film withstand voltage evaluation, which is another evaluation quality, is the same as that of the conventional product, but furthermore, an oxidizing liquid such as nitric acid [NHO 3 ] or hydrogen peroxide solution is used. By adding a cleaning step of gas and the like, a uniform oxide film was formed, and the effect of improving the withstand voltage characteristics of the oxide film was improved.
また、洗浄槽の前で、アスピレータにより原液と純水
とを連続的に混合して、洗浄液に調製し、これを洗浄槽
に供給する方式とすると、洗浄液中の弗酸濃度の変動に
逐次対応が可能で、洗浄液濃度を安定して一定に保つこ
とができる。あるいは、濃度を変化させたいときも原液
供給ライン、純粋供給ラインとも流量制御可能なである
から、直ちに変更ができる。Also, if the undiluted solution and pure water are continuously mixed by an aspirator in front of the cleaning tank to prepare a cleaning liquid and this is supplied to the cleaning tank, the system can respond to fluctuations in the concentration of hydrofluoric acid in the cleaning liquid. It is possible to stably maintain the concentration of the washing solution. Alternatively, when it is desired to change the concentration, the flow rate of both the undiluted solution supply line and the pure supply line can be controlled, so that the concentration can be changed immediately.
第１図は、従来洗浄法と本発明の洗浄方法とをシリコン
ウエハ上のパーテイクル数で比較した図。 第２図は、従来洗浄法と本発明の洗浄方法とをシリコン
ウエハ上の金属濃度で比較した図。 第３図は、従来洗浄法と本発明の洗浄方法とをシリコン
ウエハの良品率で比較した図。 第４図は、洗浄液中の弗酸濃度と洗浄後のシリコンウエ
ハ上のパーテイクル数との関係を示す図。 第５図は、洗浄液中の弗酸濃度と洗浄後のシリコンウエ
ハ上の金属濃度との関係を示す図。 第６図は、本発明方法の実施に好適な洗浄装置の一実施
例の模式図。 第７図は、弗酸溶液洗浄におけるシリコンウエハの面状
態を表わす図。 第８図は、シリコンウエハの弗酸溶液洗浄によるメカニ
ズムを示す図。 １……洗浄槽、２……洗浄原液供給ライン、３……純水
供給ライン、４、４′……流量調節弁、５……アスピレ
ータ、６……シリコンウエハ、７……ポンプ、８……フ
イルター、９……洗浄液、10……洗浄原液、11……金属
不純物、12……パーテイクル。FIG. 1 is a diagram comparing the conventional cleaning method and the cleaning method of the present invention with the number of particles on a silicon wafer. FIG. 2 is a diagram comparing the conventional cleaning method and the cleaning method of the present invention with the metal concentration on a silicon wafer. FIG. 3 is a diagram comparing the conventional cleaning method and the cleaning method of the present invention in terms of the yield rate of silicon wafers. FIG. 4 is a view showing the relationship between the concentration of hydrofluoric acid in a cleaning solution and the number of particles on a silicon wafer after cleaning. FIG. 5 is a diagram showing the relationship between the concentration of hydrofluoric acid in the cleaning liquid and the concentration of metal on the silicon wafer after cleaning. FIG. 6 is a schematic view of an embodiment of a cleaning apparatus suitable for carrying out the method of the present invention. FIG. 7 is a view showing a surface state of a silicon wafer in hydrofluoric acid solution cleaning. FIG. 8 is a view showing a mechanism by cleaning a silicon wafer with a hydrofluoric acid solution. DESCRIPTION OF SYMBOLS 1 ... Cleaning tank, 2 ... Cleaning stock solution supply line, 3 ... Pure water supply line, 4, 4 '... Flow control valve, 5 ... Aspirator, 6 ... Silicon wafer, 7 ... Pump, 8 ... ... Filter, 9 ... Cleaning solution, 10 ... Cleaning solution, 11 ... Metal impurities, 12 ... Particles.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−198127（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-62-198127 (JP, A)
Claims (1)
≦〔純水（H2O）／弗酸（HF）〕≦106（重量比）で成る
弗酸水溶液で処理し、均質な不純物を含まない酸化膜を
残存させることを特徴とする半導体の湿式洗浄方法。1. A semiconductor wafer having a surface oxide film layer 10 3
≦ [pure water (H 2 O) / hydrofluoric acid (HF)] ≦ 10 6 (weight ratio) by treating with an aqueous solution of hydrofluoric acid to leave a uniform oxide-free oxide film. Wet cleaning method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1327362A JP2713787B2 (en) | 1989-12-19 | 1989-12-19 | Semiconductor wet cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1327362A JP2713787B2 (en) | 1989-12-19 | 1989-12-19 | Semiconductor wet cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03190130A JPH03190130A (en) | 1991-08-20 |
| JP2713787B2 true JP2713787B2 (en) | 1998-02-16 |
Family
ID=18198298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1327362A Expired - Lifetime JP2713787B2 (en) | 1989-12-19 | 1989-12-19 | Semiconductor wet cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2713787B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6896744B2 (en) | 2001-05-22 | 2005-05-24 | Mitsubishi Chemical Corporation | Method for cleaning a surface of a substrate |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2902239B2 (en) * | 1992-12-25 | 1999-06-07 | 三菱電機株式会社 | Superconducting wire connection method, superconducting wire having connection portion, and superconducting wire connecting die |
| JP3489329B2 (en) * | 1996-03-19 | 2004-01-19 | 信越半導体株式会社 | Silicon wafer surface treatment method |
| KR100307161B1 (en) * | 1999-05-13 | 2001-09-26 | 황인길 | Method for formimg metal layer of semiconductor devices |
| KR100310172B1 (en) * | 1999-05-13 | 2001-11-01 | 황인길 | Method for formimg metal layer of semiconductor devices |
| WO2006007453A1 (en) * | 2004-07-01 | 2006-01-19 | Fsi International, Inc. | Cleaning process for semiconductor substrates |
| JP5043487B2 (en) * | 2007-03-29 | 2012-10-10 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747222U (en) * | 1980-08-29 | 1982-03-16 | ||
| JPS62198127A (en) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | Cleaning method for semiconductor wafer |
-
1989
- 1989-12-19 JP JP1327362A patent/JP2713787B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6896744B2 (en) | 2001-05-22 | 2005-05-24 | Mitsubishi Chemical Corporation | Method for cleaning a surface of a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03190130A (en) | 1991-08-20 |
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